vibrating device

Abstract

Vibration device. A vibration device having good frequency power supply characteristics is provided. The vibration device has, in order, a base, a semiconductor element having an oscillation circuit, a vibrator having an excitation electrode, and has: a first wiring electrically connecting the excitation electrode and the semiconductor element; a second wiring electrically connecting a second external terminal provided on the base as an external output terminal and the semiconductor element; and a shield wiring provided between at least a portion of the first wiring and at least a portion of the second wiring.

Description

Technical Field

[0001] This invention relates to vibration devices. Background Technology

[0002] Conventionally, as shown in Patent Document 1, it is known that a piezoelectric oscillator (vibration device) is formed by arranging a piezoelectric vibrator and a circuit for oscillating the piezoelectric vibrator, i.e., an IC chip, in the vertical direction of a substrate. By arranging the piezoelectric vibrator, IC chip, and substrate in this way, the piezoelectric oscillator can be miniaturized.

[0003] Patent Document 1: Japanese Patent Application Publication No. 2006-67552

[0004] However, in the piezoelectric oscillator described in Patent Document 1, the distance between the pair of wirings used to electrically connect the piezoelectric resonator and the IC chip and to oscillate the piezoelectric resonator and the wirings used to electrically connect the mounting terminals of the piezoelectric oscillator and the IC chip and to output clock signals or other output signals is close. Therefore, the parasitic capacitance generated between the pair of wirings used to oscillate the piezoelectric resonator and the wirings used to output the output signals increases. As this parasitic capacitance increases, the difference between the parasitic capacitance between one of the wirings used to oscillate the piezoelectric resonator and the wiring used to output the output signals, and the difference between the parasitic capacitance between the other wiring in the pair of wirings used to oscillate the piezoelectric resonator and the wiring used to output the output signals, increases. Furthermore, when this difference in parasitic capacitance increases, there is a problem of deterioration in the frequency power supply characteristics of the piezoelectric oscillator.

[0005] In addition, frequency power supply characteristics are the changes in output frequency relative to changes in power supply voltage. Deterioration of frequency power supply characteristics means that the changes in output frequency relative to changes in power supply voltage increase. Summary of the Invention

[0006] The vibrating device comprises, in sequence, a base, a semiconductor element having an oscillation circuit, and an oscillator having an excitation electrode. The vibrating device has: a first wiring that electrically connects the excitation electrode to the semiconductor element; a second wiring that electrically connects an external output terminal disposed on the base to the semiconductor element; and a shielding wiring disposed between at least a portion of the first wiring and at least a portion of the second wiring. Attached Figure Description

[0007] Figure 1 This is a cross-sectional view of the vibration device according to Embodiment 1.

[0008] Figure 2 This is a top view of the vibration device according to Embodiment 1.

[0009] Figure 3 This is a top view of the base in Embodiment 1.

[0010] Figure 4This is a cross-sectional view of the oscillator in Embodiment 1.

[0011] Figure 5 This is a top view of the vibrating element in Embodiment 1.

[0012] Figure 6 This is a cross-sectional view of the vibration device according to Embodiment 2.

[0013] Figure 7 This is a cross-sectional view of the vibration device according to embodiment 3.

[0014] Figure 8 This is a cross-sectional view of the vibration device in embodiment 4.

[0015] Figure 9 This is a top view of the first base substrate of Embodiment 4.

[0016] Figure 10 This is a top view of the base in embodiment 4.

[0017] Figure 11 This is a top view of the vibration device according to embodiment 4.

[0018] Figure 12 yes Figure 10 A sectional view along line AA.

[0019] Figure 13 This is a cross-sectional view of the vibration device in embodiment 5.

[0020] Figure 14 This is a top view of the vibration device in embodiment 5.

[0021] Figure 15 This is a top view of the base in embodiment 5.

[0022] Label Explanation

[0023] 1, 1a, 1b, 1c, 1d Vibrating devices; 2, 2c Base; 3 Semiconductor element; 4 Oscillator; 5 Vibrating element; 20, 20a, 20b, 20c, 20d Shielding wiring; 31 Semiconductor substrate; 32 Circuit section; 33 Oscillating circuit; 51 Vibrating substrate; 61 Substrate; 62 Cover; 101, 101c, 101d First driving wiring (first wiring); 102, 102c, 102d Second driving wiring (first wiring); 103, 103c, 103d Second wiring. Detailed Implementation

[0024] Next, embodiments of the present invention will be described with reference to the accompanying drawings.

[0025] For clarity, the following figures illustrate the X-axis, Y-axis, and Z-axis as three mutually orthogonal axes. The direction along the X-axis is referred to as the "X-direction," the direction along the Y-axis as the "Y-direction," and the direction along the Z-axis as the "Z-direction." Furthermore, the front end of the arrow pointing towards each axis is called the "positive side," and the base end is called the "negative side." For example, the Y-direction includes both the positive and negative sides. Similarly, the positive side of the Z-direction is called "up," and the negative side is called "down." The view from the Z-direction is also simply referred to as the "top view."

[0026] 1. Implementation Method 1

[0027] Reference Figures 1-5 The vibration device 1 of Embodiment 1 will be described. In this embodiment, the vibration device 1 is an oscillator. However, the vibration device 1 may not be an oscillator. For example, the vibration device 1 may also be an inertial sensor or the like.

[0028] like Figure 1 as well as Figure 2 As shown, the vibrating device 1 includes a base 2, a semiconductor element 3, and an oscillator 4. The base 2, semiconductor element 3, and oscillator 4 are stacked sequentially along the Z direction, which is the vertical direction. In this embodiment, the semiconductor element 3 is disposed on the upper surface of the base 2, and the oscillator 4 is disposed on the upper surface of the semiconductor element 3. Furthermore, a molding portion M is provided on the upper surface of the base 2 to seal the semiconductor element 3 and the oscillator 4. Additionally, in... Figure 2 For ease of explanation, the molding part M is omitted.

[0029] The molding part M protects the various parts of the vibrating device 1, such as the semiconductor element 3 and the oscillator 4, from moisture, dust, impact, etc. The material used to form the molding part M is not particularly limited. For example, a thermosetting resin such as epoxy resin can be used. The molding part M can be formed, for example, using compression molding. Furthermore, although the molding part M is used in this embodiment, the semiconductor element 3 and the oscillator 4 can also be sealed by attaching a cover having a recess capable of housing the semiconductor element 3 and the oscillator 4 to the upper surface of the base 2.

[0030] First, let’s explain base 2.

[0031] In this embodiment, the base 2 is flat. The base 2 has an upper surface opposite to the semiconductor element 3, a lower surface opposite to the upper surface, and a side surface connecting the upper and lower surfaces. The material forming the base 2 is not particularly limited. For example, a ceramic substrate can be used for the base 2.

[0032] like Figure 1 and Figure 3As shown, a first external terminal 221, a second external terminal 222, a third external terminal 223, and a fourth external terminal 224 are disposed on the lower surface of the base 2. The first external terminal 221, the second external terminal 222, the third external terminal 223, and the fourth external terminal 224 are external terminals used to electrically connect the vibrating device 1 to the outside.

[0033] The first external terminal 221 is disposed on the lower surface of the base 2 at an angle on both the positive X-direction and the positive Y-direction. The second external terminal 222 is disposed on the lower surface of the base 2 at an angle on both the positive X-direction and the negative Y-direction. The third external terminal 223 is disposed on the lower surface of the base 2 at an angle on both the negative X-direction and the negative Y-direction. The fourth external terminal 224 is disposed on the lower surface of the base 2 at an angle on both the negative X-direction and the positive Y-direction.

[0034] The first external terminal 221 is a grounding terminal for connection to a ground potential. The ground potential in this invention is a reference potential with a fixed potential. The second external terminal 222 is an external output terminal for outputting a reference signal such as a clock signal. The third external terminal 223 is a power supply terminal for connection to a power source. The fourth external terminal 224 is an output enable terminal for controlling the output from the second external terminal 222, which is an external output terminal.

[0035] In addition, a plurality of through holes 231, 232, 233, and 234 are provided in the base 2, penetrating between the upper and lower surfaces of the base 2. The through holes 231, 232, 233, and 234 are through electrodes formed by filling the through holes of the base 2 with a conductive material. The through holes 231, 232, 233, and 234 are configured to overlap with the first external terminal 221, the second external terminal 222, the third external terminal 223, and the fourth external terminal 224, respectively, when viewed from above.

[0036] like Figure 2 and Figure 3 As shown, a first connection wiring 211, a second connection wiring 212, a third connection wiring 213, a fourth connection wiring 214, a fifth connection wiring 215 and a sixth connection wiring 216, which are electrically connected to the semiconductor element 3, are respectively arranged on the upper surface of the base 2.

[0037] The first connection wiring 211 is configured to overlap with the through-hole 231 when viewed from above. Furthermore, the first connection wiring 211 and the first external terminal 221 are electrically connected via the through-hole 231. That is, the first connection wiring 211 is connected to the ground potential via the first external terminal 221 (which serves as a ground terminal) and the through-hole 231. Additionally, as described later, the first connection wiring 211 can function as a shielding wiring 20.

[0038] The second connection wiring 212 is configured to overlap with the through-hole 232 when viewed from above. Furthermore, the second connection wiring 212 and the second external terminal 222 are electrically connected via the through-hole 232.

[0039] The third connection wiring 213 is configured to overlap with the through-hole 233 when viewed from above. Furthermore, the third connection wiring 213 and the third external terminal 223 are electrically connected via the through-hole 233. A portion of the fourth connection wiring 214 is configured to overlap with the fourth external terminal 224 and the through-hole 234 when viewed from above. Furthermore, the fourth connection wiring 214 and the fourth external terminal 224 are electrically connected via the through-hole 234.

[0040] The fifth connecting wire 215 and the sixth connecting wire 216 are located on the upper surface of the base 2, between the third connecting wire 213 and the fourth connecting wire 214. The third connecting wire 213, the fifth connecting wire 215, the sixth connecting wire 216, and the fourth connecting wire 214 are arranged sequentially facing the positive side of the Y direction.

[0041] Furthermore, the fifth connecting wire 215, the sixth connecting wire 216, and the second connecting wire 212 are arranged to sandwich the oscillator 4 when viewed from above. Specifically, the fifth connecting wire 215 and the sixth connecting wire 216, which form part of the first wires 101 and 102, are arranged on one side of the oscillator 4, i.e., the negative side in the X direction, when viewed from above. The second connecting wire 212, which forms part of the second connecting wire 103, is arranged on the other side of the oscillator 4, i.e., the positive side in the X direction, when viewed from above. The first wires 101, 102, and the second connecting wire 103 will be described later.

[0042] Next, semiconductor element 3 will be described.

[0043] like Figure 1 As shown, the semiconductor element 3 includes a semiconductor substrate 31 and a circuit section 32. In this embodiment, the circuit section 32 is disposed on the lower surface of the semiconductor substrate 31. That is, the upper surface of the semiconductor element 3 is the upper surface of the semiconductor substrate 31, and the lower surface of the semiconductor element 3 is the lower surface of the circuit section 32.

[0044] The semiconductor substrate 31 is flat. The material used to form the semiconductor substrate 31 is not particularly limited. For example, silicon, germanium, or silicon-germanium can be used.

[0045] The circuit section 32 is an integrated circuit in which multiple active components, such as transistors (not shown), are electrically connected by wiring (not shown). The circuit section 32 includes an oscillation circuit 33 that causes the vibrating element 5 of the oscillator 4 to oscillate, generating a reference signal such as a clock signal at a specific frequency. In addition to the oscillation circuit 33, the circuit section 32 may also include a temperature compensation circuit that corrects the vibration characteristics of the vibrating element 5 according to temperature changes, a processing circuit that processes the output signal from the oscillation circuit 33, and an electrostatic discharge protection circuit, among other things.

[0046] like Figure 1 and Figure 2 As shown, a first connection terminal 321, a second connection terminal 322, a third connection terminal 323, a fourth connection terminal 324, a fifth connection terminal 325, and a sixth connection terminal 326 are disposed on the lower surface of the semiconductor element 3. The first connection terminal 321, the second connection terminal 322, the third connection terminal 323, the fourth connection terminal 324, the fifth connection terminal 325, and the sixth connection terminal 326 are electrically connected to the circuit section 32 via wiring (not shown).

[0047] Furthermore, the fifth connecting terminal 325 and the sixth connecting terminal 326 are arranged with the second connecting terminal 322 sandwiching the oscillator 4 when viewed from above. Specifically, the fifth connecting terminal 325 and the sixth connecting terminal 326 are arranged on one side of the oscillator 4, i.e., the negative side in the X direction, when viewed from above. The second connecting terminal 322 is arranged on the other side of the oscillator 4, i.e., the positive side in the X direction, when viewed from above.

[0048] The first connection terminal 321 is a grounding terminal for connection to ground potential. The second connection terminal 322 is a reference signal output terminal for outputting reference signals such as clock signals. The third connection terminal 323 is a power supply terminal for connection to a power source. The fourth connection terminal 324 is an output enable terminal for controlling the output from the second connection terminal 322, which is the reference signal output terminal. The fifth connection terminal 325 and the sixth connection terminal 326 are drive signal output terminals for outputting drive signals that cause the oscillator 4 to oscillate. The oscillator 4 oscillates according to the drive signals output from the fifth connection terminal 325 and the sixth connection terminal 326.

[0049] Furthermore, bumps B1, B2, B3, B4, B5, and B6 are disposed between the base 2 and the semiconductor element 3. The base 2 and the semiconductor element 3 are bonded via bumps B1, B2, B3, B4, B5, and B6. That is, the semiconductor element 3 is mounted on the upper surface of the base 2 using a flip-chip bonding method via bumps B1, B2, B3, B4, B5, and B6. There are no particular limitations on the bumps B1, B2, B3, B4, B5, and B6, as long as they possess conductivity and bonding properties. For example, gold bumps, silver bumps, copper bumps, solder bumps, etc., can be used.

[0050] Specifically, for example, the bump B1 is configured to overlap with the first connection wiring 211 disposed on the upper surface of the base 2 and the first connection terminal 321 disposed on the lower surface of the semiconductor element 3 when viewed from above. In this way, the first connection terminal 321 and the first connection wiring 211 are electrically connected via the bump B1.

[0051] Similarly, the second connection terminal 322 and the second connection wiring 212 are electrically connected via bump B2. The third connection terminal 323 and the third connection wiring 213 are electrically connected via bump B3. The fourth connection terminal 324 and the fourth connection wiring 214 are electrically connected via bump B4. The fifth connection terminal 325 and the fifth connection wiring 215 are electrically connected via bump B5. The sixth connection terminal 326 and the sixth connection wiring 216 are electrically connected via bump B6. Furthermore, bumps B1, B2, B3, B4, B5, and B6 can be disposed on either the base 2 or the semiconductor element 3.

[0052] An oscillator 4 is disposed on the upper surface of semiconductor element 3. Semiconductor element 3 and oscillator 4 are joined by adhesive D1.

[0053] Next, the oscillator 4 will be explained.

[0054] like Figure 1 and Figure 4 As shown, the oscillator 4 has a vibrating element 5 and a package 6 for housing the vibrating element 5.

[0055] First, let’s explain the vibrating element 5.

[0056] like Figure 4 and Figure 5 As shown, the vibration element 5 has a vibration substrate 51 and an electrode 52 disposed on the surface of the vibration substrate 51.

[0057] The vibrating substrate 51 is flat. The vibrating substrate 51 has a thin-walled vibrating portion 511 and a thick-walled portion 512 located around the vibrating portion 511 and thicker than the vibrating portion 511. In this embodiment, the vibrating substrate 51 is an AT-cut quartz substrate.

[0058] Electrode 52 has a pair of excitation electrodes 521 and 522, a pair of pad electrodes 523 and 524, and a pair of lead-out wirings 525 and 526. Excitation electrode 521 is disposed on the upper surface of the vibrating portion 511. Excitation electrode 522 is disposed on the lower surface of the vibrating portion 511. Excitation electrodes 521 and 522 are positioned opposite each other, separated by the vibrating substrate 51. Pad electrode 523 is disposed on the upper surface of the thick-walled portion 512. Pad electrode 524 is disposed on the lower surface of the thick-walled portion 512. Pad electrodes 523 and 524 are positioned opposite each other, separated by the vibrating substrate 51. Furthermore, lead-out wiring 525 is disposed on the upper surface of the thick-walled portion 512, electrically connecting excitation electrode 521 and pad electrode 523. Lead-out wiring 526 is disposed on the lower surface of the thick-walled portion 512, electrically connecting excitation electrode 522 and pad electrode 524.

[0059] By applying drive signals to the excitation electrodes 521 and 522 via the pad electrodes 523 and 524 and the lead-out wiring 525 and 526, thickness shear vibration can be excited in the vibrating part 511 sandwiched between the excitation electrodes 521 and 522.

[0060] The above provides a brief explanation of the vibrating element 5.

[0061] Furthermore, the structure of the vibrating element 5 is not limited to the structure described above. For example, the vibrating element 5 is not limited to a plate-shaped vibrating element for thickness shear vibration. For example, it may be a vibrating element in which multiple vibrating arms bend in the in-plane direction, or it may be a vibrating element in which multiple vibrating arms bend in the out-of-plane direction. In addition, for example, it may be a vibrating element using an X-cut quartz substrate, Y-cut quartz substrate, Z-cut quartz substrate, BT-cut quartz substrate, SC-cut quartz substrate, ST-cut quartz substrate, etc., as the vibrating substrate 51. In addition, for example, it may be a vibrating element using a piezoelectric material other than quartz. In addition, for example, it may be a SAW (Surface Acoustic Wave) resonator, or a MEMS (Micro Electro Mechanical Systems) oscillator with piezoelectric elements disposed on a semiconductor substrate such as silicon.

[0062] Next, the package 6 that houses the vibrating element 5 will be described.

[0063] like Figure 4 As shown, the package 6 has a base 61 and a cover 62. In this embodiment, the cover 62 is disposed on the lower surface of the base 61. That is, the upper surface of the oscillator 4 is the upper surface of the base 61, and the lower surface of the oscillator 4 is the lower surface of the cover 62.

[0064] The substrate 61 is box-shaped with a recess 611. The recess 611 has an opening on the lower surface side of the substrate 61. In other words, the substrate 61 has a flat base 612 and a frame-shaped sidewall 613 that is erected vertically downward from the outer periphery of the base 612.

[0065] The cover 62 is flat. The cover 62 engages with the lower surface of the base 61 by blocking the opening of the recess 611. Furthermore, a storage space S is formed by blocking the recess 611 with the cover 62. The vibrating element 5 is stored in the storage space S. The storage space S is, for example, in a depressurized state.

[0066] The materials constituting the substrate 61 and the cover 62 are not particularly limited. For example, ceramic substrates such as alumina, glass substrates, and semiconductor substrates such as silicon can be used as the substrate 61 and the cover 62. In addition, when the substrate 61 is a ceramic substrate, an alloy such as Kovar alloy, whose coefficient of linear expansion is similar to that of the ceramic substrate, can be used for the cover 62.

[0067] In addition, internal electrodes 615 and 616 are disposed on the bottom surface of the recess 611.

[0068] The vibrating element 5 is arranged with the upper surface of the vibrating substrate 51 facing the bottom surface of the recess 611. The pad electrode 523 and the internal electrode 615 disposed on the upper surface of the vibrating substrate 51 are bonded via a conductive adhesive 617. That is, the vibrating element 5 is fixed to the bottom surface of the recess 611 by the conductive adhesive 617, and the pad electrode 523 and the internal electrode 615 are electrically connected. The pad electrode 524 disposed on the lower surface of the vibrating substrate 51 is electrically connected to the internal electrode 616 via a conductive lead W1.

[0069] like Figure 2 and Figure 4 As shown, a first electrode terminal 63, a second electrode terminal 64, a third electrode terminal 65, and a fourth electrode terminal 66 are disposed on the upper surface of the substrate 61.

[0070] like Figure 4 As shown, the first electrode terminal 63 is electrically connected to the internal electrode 615 via internal wiring (not shown) disposed within the substrate 61. That is, as... Figure 4 and Figure 5 As shown, the first electrode terminal 63 is electrically connected to the excitation electrode 521 via the internal electrode 615, the pad electrode 523, and the lead-out wiring 525. Additionally, as... Figure 1 and Figure 2 As shown, the first electrode terminal 63 and the fifth connection wiring 215 disposed on the upper surface of the base 2 are electrically connected via a conductive lead W2.

[0071] like Figure 4 As shown, the second electrode terminal 64 is electrically connected to the internal electrode 616 via internal wiring (not shown) disposed within the substrate 61. That is, as... Figure 4 and Figure 5 As shown, the second electrode terminal 64 is electrically connected to the excitation electrode 522 via the internal electrode 616, the pad electrode 524, and the lead-out wiring 526. Additionally, as... Figure 1 and Figure 2 As shown, the second electrode terminal 64 and the sixth connection wiring 216 disposed on the upper surface of the base 2 are electrically connected via a conductive lead W3.

[0072] The third electrode terminal 65 is a grounding terminal for connection to a ground potential. The third electrode terminal 65 is electrically connected to various parts of the oscillator 4, such as the vibrating element 5 or the cover 62, via internal wiring (not shown) disposed within the base 61. Furthermore, the third electrode terminal 65 and the first connecting wiring 211 disposed on the upper surface of the base 2 are electrically connected via a conductive lead W4. Alternatively, the third electrode terminal 65 may be a dummy terminal that is not electrically connected to any part of the oscillator 4. Alternatively, the third electrode terminal 65 may be omitted.

[0073] Leads W2, W3, and W4 are solder wires formed using the wire bonding method. Leads W2, W3, and W4 can be made of materials such as gold, copper, or aluminum.

[0074] The fourth electrode terminal 66 is a dummy terminal that is not electrically connected to any part of the oscillator 4. In this embodiment, the fourth electrode terminal 66, as a dummy terminal, is in a floating state, but it can also be connected to the ground potential in the same way as the third electrode terminal 65. Alternatively, the fourth electrode terminal 66 can be omitted.

[0075] The above describes the base 2, the semiconductor element 3, and the oscillator 4.

[0076] Next, the first wiring 101, 102, the second wiring 103, and the shielding wiring 20 of the vibration device 1 will be described.

[0077] First, let's explain the first wiring, 101 and 102.

[0078] like Figure 1 and Figure 2 As shown, the first wirings 101 and 102 are wirings that electrically connect the excitation electrodes 521 and 522 of the oscillator 4 to the semiconductor element 3. That is, the first wirings 101 and 102 are a pair of drive wirings used to apply a drive signal to the excitation electrodes 521 and 522 to cause the oscillator 4 to oscillate. In addition, hereafter, when distinguishing between the first wiring 101 that electrically connects the excitation electrode 521 to the semiconductor element 3 and the first wiring 102 that electrically connects the excitation electrode 522 to the semiconductor element 3, the first wiring 101 that electrically connects the excitation electrode 521 to the semiconductor element 3 will also be referred to as the first drive wiring 101, and the first wiring 102 that electrically connects the excitation electrode 522 to the semiconductor element 3 will be referred to as the second drive wiring 102.

[0079] In this embodiment, the first drive wiring 101 has a first electrode terminal 63 disposed on the upper surface of the oscillator 4, a fifth connection wiring 215 disposed on the upper surface of the base 2, and a lead wire W2 electrically connecting the first electrode terminal 63 and the fifth connection wiring 215. The second drive wiring 102 has a second electrode terminal 64 disposed on the upper surface of the oscillator 4, a sixth connection wiring 216 disposed on the upper surface of the base 2, and a lead wire W3 electrically connecting the second electrode terminal 64 and the sixth connection wiring 216.

[0080] Drive signals output from the fifth connection terminal 325 and the sixth connection terminal 326 disposed on the lower surface of the semiconductor element 3 are applied to the excitation electrodes 521 and 522 via the first drive wiring 101 and the second drive wiring 102, respectively. As a result, the oscillator 4 oscillates.

[0081] Next, the second wiring 103 will be explained.

[0082] like Figure 1 and Figure 3 As shown, the second wiring 103 is a wiring that electrically connects the external output terminal, i.e., the second external terminal 222, disposed on the base 2, to the semiconductor element 3. That is, the second wiring 103 is an output wiring for outputting the reference signal output from the semiconductor element 3 to the outside of the vibration device 1.

[0083] In this embodiment, the second wiring 103 has a second external terminal 222, a second connecting wiring 212, and a through-hole 232 that electrically connects the second external terminal 222 and the second connecting wiring 212. The reference signal output from the second connecting terminal 322 disposed on the lower surface of the semiconductor element 3 is output to the outside of the vibration device 1 via the second wiring 103, which serves as an output wiring.

[0084] Next, the shielded wiring 20 will be explained.

[0085] like Figure 1 and Figure 2 As shown, the shielding wiring 20 is a wiring disposed between the first wiring 101, 102 and the second wiring 103. By disposing the shielding wiring 20 between the first wiring 101, 102 and the second wiring 103, the electric field generated between the first wiring 101, 102 and the second wiring 103 is shielded by the shielding wiring 20. That is, by disposing the shielding wiring 20 between the first wiring 101, 102 and the second wiring 103, the parasitic capacitance generated between the first wiring 101, 102 used to oscillate the oscillator 4 and the second wiring 103 used to output the reference signal can be reduced. Moreover, by reducing the parasitic capacitance generated between the first wiring 101, 102 and the second wiring 103, the difference between the parasitic capacitance between the first drive wiring 101 and the second wiring 103 and the parasitic capacitance between the second drive wiring 102 and the second wiring 103 can be reduced. Therefore, the variation in output frequency relative to the variation in power supply voltage is reduced, and a vibration device 1 with good frequency power supply characteristics can be provided.

[0086] Next, the shielded wiring 20 will be described in detail.

[0087] In this embodiment, the first connecting wire 211 disposed on the upper surface of the base 2 functions as a shielding wire 20. In detail, in addition to electrically connecting the grounding terminal, i.e. the first external terminal 221 of the vibrating device 1, to the grounding terminal, i.e. the first connecting terminal 321 of the semiconductor element 3, the first connecting wire 211 also functions as a shielding wire 20 connected to the ground potential.

[0088] like Figure 2 and Figure 3 As shown, the first connecting wire 211 has a portion that overlaps with the oscillator 4 when viewed from above. The portion of the first connecting wire 211 that overlaps with the oscillator 4 when viewed from above has a shape approximately the same as the oscillator 4. The portion of the first connecting wire 211 that overlaps with the oscillator 4 when viewed from above functions as a shielding wire 20.

[0089] like Figure 1 and Figure 2 As shown, in this embodiment, the first connecting wire 211, which serves as the shielding wire 20, is disposed, for example, between the fifth connecting wire 215 and the sixth connecting wire 216 of the first wires 101 and 102 and the second connecting wire 212 of the second wire 103. Furthermore, the first connecting wire 211, which serves as the shielding wire 20, is disposed, for example, between the leads W2 and W3 of the first wires 101 and 102 and the second external terminal 222 of the second wire 103.

[0090] In other words, the first connecting wire 211, which is the shielded wiring 20, is disposed between at least a portion of the first wirings 101 and 102 and at least a portion of the second wiring 103.

[0091] In other words, there exist straight lines that all pass through the first wirings 101 and 102, the first connecting wiring 211 (which serves as the shielding wiring 20), and the second wiring 103. More specifically, there exist straight lines that all pass through the first driving wiring 101, the shielding wiring 20, and the second wiring 103, or straight lines that all pass through the second driving wiring 102, the shielding wiring 20, and the second wiring 103. Alternatively, there may be both straight lines that all pass through the first driving wiring 101, the shielding wiring 20, and the second wiring 103, and straight lines that all pass through the second driving wiring 102, the shielding wiring 20, and the second wiring 103.

[0092] In this way, by configuring the first connecting wire 211, which serves as the shielding wire 20, between at least a portion of the first wires 101 and 102 and at least a portion of the second wire 103, the difference between the parasitic capacitance between the first drive wire 101 and the second wire 103 and the parasitic capacitance between the second drive wire 102 and the second wire 103 can be reduced. Therefore, the variation of the output frequency relative to the variation of the power supply voltage is reduced, and a vibration device 1 with good frequency power supply characteristics can be provided.

[0093] In this embodiment, the shielding wiring 20 is disposed on the base 2, but the component that can be disposed on the shielding wiring 20 is not limited to the base 2. The shielding wiring 20 can be disposed between at least a portion of the first wiring 101, 102 and at least a portion of the second wiring 103 in such a way that it shields at least a portion of the electric field generated between the first wiring 101, 102 and the second wiring 103. For example, the shielding wiring 20 can also be disposed on the semiconductor element 3 or the oscillator 4.

[0094] In addition, in this embodiment, the shielding wiring 20 is disposed on the upper surface of the base 2 opposite to the semiconductor element 3, but it can also be disposed inside the base 2.

[0095] In this embodiment, the shielding wiring 20 is disposed between a portion of the first wirings 101 and 102 and a portion of the second wiring 103, but it can also be disposed between all of the first wirings 101 and 102 and all of the second wiring 103. For example, by distributing the shielding wiring 20 in multiple locations such as inside the base 2 or in the semiconductor element 3, in addition to the upper surface of the base 2, the shielding wiring 20 can be disposed between all of the first wirings 101 and 102 and all of the second wiring 103.

[0096] As described above, the following effects can be obtained according to this embodiment.

[0097] The vibrating device 1 is sequentially stacked with a base 2, a semiconductor element 3 having an oscillation circuit 33, and an oscillator 4 having excitation electrodes 521 and 522. It has: first wiring 101 and 102 that electrically connect the excitation electrodes 521 and 522 to the semiconductor element 3; second wiring 103 that electrically connects the external output terminal, i.e., the second external terminal 222, disposed on the base 2 to the semiconductor element 3; and shielding wiring 20 that is disposed between at least a portion of the first wiring 101 and 102 and at least a portion of the second wiring 103.

[0098] Therefore, the parasitic capacitance between the first drive wiring 101, which is one of the first wirings 101 and 102, and the second wiring 103, which is the wiring for the output reference signal, and the difference between the parasitic capacitance between the second drive wiring 102 and the second wiring 103, which is the other of the first wirings 101 and 102, can be reduced. As a result, the variation of the output frequency is smaller relative to the variation of the power supply voltage, and a vibration device 1 with good frequency power supply characteristics can be provided.

[0099] 2. Implementation Method 2

[0100] Next, refer to Figure 6 The vibration device 1a of Embodiment 2 will be described.

[0101] In Embodiment 2, the vibration device 1a connects the semiconductor substrate 31 of the semiconductor element 3 to a ground potential, allowing the semiconductor substrate 31 to function as a shielding wiring 20a. Otherwise, it is the same as in Embodiment 1. Furthermore, the same markings are used for structures identical to those in Embodiment 1, and repeated descriptions are omitted.

[0102] In this embodiment, the semiconductor substrate 31 of the semiconductor element 3 is connected to ground potential. For example, the semiconductor substrate 31 and the semiconductor element 3 are connected via internal wiring (not shown) provided in the circuit section 32. Figure 2 The first connection terminal 321 shown is electrically connected as a ground terminal, thereby enabling the semiconductor substrate 31 to be connected to a ground potential. The semiconductor substrate 31 connected to the ground potential is equivalent to a constant potential layer maintained at a constant potential. That is, the semiconductor element 3 has a semiconductor substrate 31 as a constant potential layer maintained at a constant potential.

[0103] like Figure 6 As shown, the semiconductor substrate 31, which serves as a constant potential layer, can function as a shielding wiring 20a.

[0104] In this embodiment, the semiconductor substrate 31, which serves as the shielding wiring 20a, is disposed, for example, between the first electrode terminal 63 and the second electrode terminal 64 of the first wirings 101 and 102 and the second connection wiring 212 of the second wiring 103.

[0105] In this way, by disposing the semiconductor substrate 31, which serves as the shielding wiring 20a, between at least a portion of the first wirings 101 and 102 and at least a portion of the second wiring 103, the difference between the parasitic capacitance between the first driving wiring 101 and the second wiring 103 and the parasitic capacitance between the second driving wiring 102 and the second wiring 103 can be reduced. Therefore, the variation in output frequency relative to the variation in power supply voltage is reduced, and a vibration device 1a with good frequency power supply characteristics can be provided.

[0106] In this embodiment, the semiconductor substrate 31 connected to the ground potential is used as a constant potential layer for the shielding wiring 20a, but the constant potential layer of the semiconductor element 3 may not be the semiconductor substrate 31. For example, a conductive layer connected to the ground potential may be disposed on the upper surface, lower surface or inside of the semiconductor element 3, and this conductive layer may be used as a constant potential layer for the shielding wiring 20a.

[0107] In addition, in this embodiment, the vibration device 1a has shielding wiring 20 in addition to shielding wiring 20a, but shielding wiring 20 may be omitted.

[0108] As described above, according to this embodiment, by disposing the semiconductor substrate 31, which serves as a constant potential layer maintained at a certain potential, between at least a portion of the first wirings 101 and 102 and at least a portion of the second wiring 103 as a shielding wiring 20a, the same effect as in Embodiment 1 can be obtained.

[0109] 3. Implementation Method 3

[0110] Next, refer to Figure 7The vibration device 1b of Embodiment 3 will be described.

[0111] In Embodiment 3, the vibration device 1b functions as a shielding wire 20b with the cover 62, otherwise it is the same as in Embodiment 1. Furthermore, the same markings are used for structures identical to those in Embodiment 1, and repeated descriptions are omitted.

[0112] In this embodiment, the cover 62 of the oscillator 4 is formed of a conductive material. For example, the cover 62 is formed of an alloy such as Kovar alloy.

[0113] like Figure 7 As shown, the cover 62, formed of conductive material, can function as a shield for the wiring 20b.

[0114] In this embodiment, the cover 62, which serves as a shield for the wiring 20b, is disposed, for example, between the first electrode terminal 63 and the second electrode terminal 64 of the first wirings 101 and 102 and the second connecting wiring 212 of the second wiring 103.

[0115] In this way, by disposing the cover 62, which serves as a shielding wire 20b, between at least a portion of the first wires 101 and 102 and at least a portion of the second wire 103, the difference between the parasitic capacitance between the first drive wire 101 and the second wire 103 and the parasitic capacitance between the second drive wire 102 and the second wire 103 can be reduced. Therefore, the variation in output frequency relative to the variation in power supply voltage is reduced, and a vibration device 1b with good frequency power supply characteristics can be provided.

[0116] The cover 62, which serves as the shielding wiring 20b, can be either electrically floating or connected to ground potential. By connecting the cover 62 to ground potential, compared to the electrically floating state of the cover 62, the difference between the parasitic capacitance between the first drive wiring 101 and the second wiring 103 and between the second drive wiring 102 and the second wiring 103 can be further reduced.

[0117] Here, an example of a structure in which the cover 62, which serves as the shielding wiring 20b, is connected to the ground potential will be described.

[0118] For example, the adhesive D1 that bonds the upper surface of the semiconductor element 3 and the lower surface of the cover 62 can be used as a conductive adhesive. By making the adhesive D1 conductive, the cover 62 is electrically connected to the semiconductor substrate 31 of the semiconductor element 3 via the adhesive D1. Therefore, by connecting the semiconductor substrate 31 to a ground potential, the cover 62, which serves as a shielding wiring 20b, can be connected to a ground potential.

[0119] Furthermore, the structure in which the cover 62, which serves as the shielding wiring 20b, is connected to the ground potential is not limited to the structure described above. For example, the third electrode terminal 65, which serves as the grounding terminal, disposed on the upper surface of the oscillator 4, can be electrically connected to the cover 62 via internal wiring (not shown) within the substrate 61.

[0120] Furthermore, in this embodiment, the vibration device 1b has a shielding wire 20 in addition to the shielding wire 20b, but the shielding wire 20 may be omitted.

[0121] As described above, according to this embodiment, by configuring the cover 62 as a shielding wire 20b between at least a portion of the first wires 101, 102 and at least a portion of the second wire 103, the same effect as in embodiment 1 can be obtained.

[0122] 4. Implementation Method 4

[0123] Next, refer to Figures 8-12 The vibration device 1c of Embodiment 4 will be described. Furthermore, in Figure 11 For ease of explanation, the molding part M is omitted.

[0124] In Embodiment 4, the base 2c of the vibration device 1c is a multilayer substrate, and the shielding wiring 20c is disposed between the layers of the multilayer substrate. Otherwise, it is the same as in Embodiment 1. Furthermore, the same markings are used for structures that are the same as in Embodiment 1, and repeated descriptions are omitted.

[0125] like Figure 8 As shown, the base 2c is a multilayer substrate with multiple substrates stacked on top of each other. In this embodiment, the base 2c is a multilayer substrate with a first base substrate 201 and a second base substrate 202 stacked on top of each other. The second base substrate 202 is disposed on the upper surface of the first base substrate 201. The upper surface of the second base substrate 202 is the upper surface of the base 2c. The lower surface of the first base substrate 201 is the lower surface of the base 2c.

[0126] In this embodiment, the base 2c is a multilayer substrate formed by stacking two substrates, the first base substrate 201 and the second base substrate 202. However, the base 2c can also be a multilayer substrate formed by stacking three or more substrates.

[0127] First, the wiring disposed between the layers of the first base substrate 201 and the second base substrate 202 will be explained.

[0128] like Figure 9 and Figure 10As shown, a seventh connection wiring 241, an eighth connection wiring 242, a ninth connection wiring 243, a tenth connection wiring 244, an eleventh connection wiring 245, and a twelfth connection wiring 246 are disposed between the layers of the first base substrate 201 and the second base substrate 202. As will be described later, the seventh connection wiring 241 is connected to the ground potential and can function as a shielding wiring 20c.

[0129] In addition, Figure 9 For ease of explanation, the seventh connection wiring 241, the eighth connection wiring 242, the ninth connection wiring 243, the tenth connection wiring 244, the eleventh connection wiring 245, and the twelfth connection wiring 246 disposed between the layers of the first base substrate 201 and the second base substrate 202 are shown on the upper surface of the first base substrate 201.

[0130] Next, the first base substrate 201 will be described.

[0131] like Figure 9 As shown, a first external terminal 221, a second external terminal 222, a third external terminal 223, and a fourth external terminal 224 are disposed on the lower surface of the first base substrate 201.

[0132] A plurality of through holes 231c, 232c, 233c, and 234c are provided on the first base substrate 201 to connect the upper and lower surfaces of the first base substrate 201. The through holes 231c, 232c, 233c, and 234c are through electrodes formed by filling the through holes of the first base substrate 201 with a conductive material.

[0133] The 7th connection wiring 241 and the 1st external terminal 221 are electrically connected via a through-hole 231c. The 8th connection wiring 242 and the 2nd external terminal 222 are electrically connected via a through-hole 232c. The 9th connection wiring 243 and the 3rd external terminal 223 are electrically connected via a through-hole 233c. The 10th connection wiring 244 and the 4th external terminal 224 are electrically connected via a through-hole 234c.

[0134] Next, the second base substrate 202 will be described.

[0135] like Figure 10 as well as Figure 11 As shown, a first connection wiring 211, a second connection wiring 212, a third connection wiring 213, a fourth connection wiring 214, a fifth connection wiring 215 and a sixth connection wiring 216 are disposed on the upper surface of the second base substrate 202.

[0136] A plurality of through holes 231d, 232d, 233d, 234d, 235, and 236 are provided on the second base substrate 202, penetrating between the upper and lower surfaces of the second base substrate 202. The through holes 231d, 232d, 233d, 234d, 235, and 236 are through electrodes formed by filling the through holes of the second base substrate 202 with a conductive material.

[0137] The first connecting wire 211 and the seventh connecting wire 241 are electrically connected via via 231d. The second connecting wire 212 and the eighth connecting wire 242 are electrically connected via via 232d. The third connecting wire 213 and the ninth connecting wire 243 are electrically connected via via 233d. The fourth connecting wire 214 and the tenth connecting wire 244 are electrically connected via via 234d.

[0138] Additionally, the 5th connection wiring 215 and the 11th connection wiring 245 are electrically connected via through-hole 235. The 6th connection wiring 216 and the 12th connection wiring 246 are electrically connected via through-hole 236.

[0139] Next, the first wiring 101c, 102c, the second wiring 103c, and the shielding wiring 20c of the vibration device 1c will be described.

[0140] First, let's explain the first wiring, 101c, 102c.

[0141] like Figure 8 and Figure 11 As shown, in this embodiment, the first drive wiring 101c of the first wiring 101c and 102c consists of a first electrode terminal 63 disposed on the upper surface of the oscillator 4, a fifth connection wiring 215 disposed on the upper surface of the base 2c, a lead wire W2 electrically connecting the first electrode terminal 63 and the fifth connection wiring 215, an eleventh connection wiring 245 disposed between the layers of the first base substrate 201 and the second base substrate 202, and a through hole 235 electrically connecting the fifth connection wiring 215 and the eleventh connection wiring 245. The second drive wiring 102c of the first wirings 101c and 102c has a second electrode terminal 64 disposed on the upper surface of the oscillator 4, a sixth connection wiring 216 disposed on the upper surface of the base 2c, a lead W3 electrically connecting the second electrode terminal 64 and the sixth connection wiring 216, a 12th connection wiring 246 disposed between the layers of the first base substrate 201 and the second base substrate 202, and a through hole 236 electrically connecting the sixth connection wiring 216 and the 12th connection wiring 246.

[0142] Next, the second wiring 103c will be explained.

[0143] like Figure 8 and Figure 11As shown, in this embodiment, the second wiring 103c has a second external terminal 222 disposed on the lower surface of the base 2c, an eighth connection wiring 242 disposed between the layers of the first base substrate 201 and the second base substrate 202, a through hole 232c electrically connecting the second external terminal 222 and the eighth connection wiring 242, a second connection wiring 212 disposed on the upper surface of the base 2c, and a through hole 232d electrically connecting the second connection wiring 212 and the eighth connection wiring 242.

[0144] Next, the shielded wiring 20c will be explained.

[0145] In this embodiment, the seventh connection wiring 241 disposed between the layers of the first base substrate 201 and the second base substrate 202 has the function of electrically connecting the ground terminal, i.e. the first external terminal 221 of the vibration device 1c, to the first connection wiring 211 disposed on the upper surface of the base 2c, and also has the function of serving as a shielding wiring 20c connected to the ground potential.

[0146] like Figure 9 and Figure 10 As shown, in this embodiment, the seventh connecting wire 241, which serves as the shielding wire 20c, has a first portion wire 241c extending in the X direction and a second portion wire 241d extending in the Y direction. The second portion wire 241d has an area that overlaps with the first connecting wire 211, which serves as the shielding wire 20, when viewed from above.

[0147] like Figure 8 and Figure 9 As shown, in this embodiment, the seventh connecting wire 241, which is a shielding wire 20c, is disposed, for example, between the eleventh connecting wire 245 and the twelfth connecting wire 246 of the first wires 101c and 102c and the eighth connecting wire 242 of the second wire 103c.

[0148] In other words, the seventh connecting wire 241, which is a shielded wire 20c, is disposed between at least a portion of the first wires 101c and 102c and at least a portion of the second wire 103c.

[0149] In this way, by configuring the seventh connecting wire 241, which serves as the shielding wire 20c, between at least a portion of the first wires 101c and 102c and at least a portion of the second wire 103c, the difference between the parasitic capacitance between the first drive wire 101c and the second wire 103c and the parasitic capacitance between the second drive wire 102c and the second wire 103c can be reduced. Therefore, the variation in output frequency relative to the variation in power supply voltage is reduced, and a vibration device 1c with good frequency power supply characteristics can be provided.

[0150] In this embodiment, the vibration device 1c has shielding wiring 20 in addition to shielding wiring 20c, but shielding wiring 20 can also be omitted.

[0151] In addition, such as Figure 9 As shown, in this embodiment, when viewed from above, the first portion of the seventh connecting wire 241c, which serves as a shielding wire 20c, disposed between the layers of the first base substrate 201 and the second base substrate 202, is disposed on the positive side in the Y direction relative to the eighth connecting wire 242, which serves as a second connecting wire 103c, disposed between the layers of the first base substrate 201 and the second base substrate 202. Furthermore, the second portion of the seventh connecting wire 241d, which serves as the shielding wire 20c, is disposed on the negative side in the X direction relative to the eighth connecting wire 242. That is, the seventh connecting wire 241, which serves as the shielding wire 20c, has a first portion of the wire 241c disposed on the positive side in the Y direction relative to the eighth connecting wire 242 when viewed from above, and a second portion of the wire 241d disposed on the negative side in the X direction relative to the eighth connecting wire 242.

[0152] In other words, the seventh connection wiring 241, which is a shielding wiring 20c disposed between the layers of the first base substrate 201 and the second base substrate 202, is disposed in two directions when viewed from above: the X direction, which is the first direction, and the Y direction, which is the second direction, which is the second direction, relative to the eighth connection wiring 242, which is a second wiring 103c disposed between the layers of the first base substrate 201 and the second base substrate 202.

[0153] Thus, by configuring the 7th connection wire 241 as a shielding wire 20c in the X and Y directions relative to the 8th connection wire 242 when viewed from above, the difference between the parasitic capacitance between the 1st drive wire 101c and the 2nd wire 103c and the parasitic capacitance between the 2nd drive wire 102c and the 2nd wire 103c can be further reduced.

[0154] In addition, such as Figure 9 and Figure 10 As shown, in this embodiment, the first portion of the seventh connecting wire 241, which is the shielding wire 20c, extends in the X direction to the side of the base 2c on the positive side in the X direction. Furthermore, the second portion of the seventh connecting wire 241, which is the shielding wire 20c, extends in the Y direction to the side of the base 2c on the negative side in the Y direction.

[0155] In this way, by extending the seventh connection wiring 241, which serves as the shield wiring 20c, to the side of the base 2c, the difference between the parasitic capacitance between the first drive wiring 101c and the second wiring 103c and the parasitic capacitance between the second drive wiring 102c and the second wiring 103c can be further reduced.

[0156] In addition, such as Figure 10 as well as Figure 12 As shown, in this embodiment, a through hole 237 is provided in the second base substrate 202, penetrating between the upper and lower surfaces of the second base substrate 202. The through hole 237 is a through electrode formed by filling the through hole through the second base substrate 202 with a conductive material.

[0157] The through-hole 237 is positioned to overlap with the seventh connection wire 241, which serves as a shielding wire 20c, when viewed from above. The through-hole 237 is electrically connected to the seventh connection wire 241 by engaging with it. That is, the through-hole 237 functions as a shielding wire 20c by being electrically connected to the seventh connection wire 241, which serves as a shielding wire 20c.

[0158] In this way, by providing via 237, the difference between the parasitic capacitance between the first driving wiring 101c and the second wiring 103c and the parasitic capacitance between the second driving wiring 102c and the second wiring 103c can be further reduced. The via 237 is electrically connected to the seventh connection wiring 241, which is a shielding wiring 20c, disposed between the layers of the first base substrate 201 and the second base substrate 202.

[0159] Furthermore, in this embodiment, the through-hole 237 is positioned to overlap with the first connection wire 211, which serves as the shielding wire 20, when viewed from above. The through-hole 237 is electrically connected to the first connection wire 211 by engaging with it. That is, the first connection wire 211 and the seventh connection wire 241 are electrically connected via the through-hole 237.

[0160] In this way, by electrically connecting the first connection wire 211, which serves as shielding wire 20, and the seventh connection wire 241, which serves as shielding wire 20c, via the through-hole 237, the difference between the parasitic capacitance between the first drive wire 101c and the second wire 103c and the parasitic capacitance between the second drive wire 102c and the second wire 103c can be further reduced.

[0161] In this embodiment, the through-hole 237 is electrically connected to the first connecting wire 211, which serves as the shielding wiring 20, but it may not be electrically connected to the first connecting wire 211. Furthermore, in this embodiment, the through-hole 237 is provided on the second base substrate 202, but it may also be provided on the first base substrate 201. In addition, in this embodiment, four through-holes 237 are provided, but they may not be provided; when through-holes 237 are provided, the number of through-holes 237 can be one or more.

[0162] As described above, according to this embodiment, by making the base 2c a multilayer substrate having a first base substrate 201 and a second base substrate 202, and by arranging a seventh connection wiring 241 as a shielding wiring 20c between the layers of the first base substrate 201 and the second base substrate 202, the same effect as in embodiment 1 can be obtained.

[0163] 5. Implementation Method 5

[0164] Next, refer to Figures 13-15 The vibration device 1d of Embodiment 5 will be described. Furthermore, in Figure 14 For ease of explanation, the molding part M is omitted.

[0165] In Embodiment 5, the vibration device 1d is the same as in Embodiment 1, except that the semiconductor element 3 is arranged upside down and electrically connected to the base 2 using wire bonding. Furthermore, the same markings are used for structures identical to those in Embodiment 1, and repeated descriptions are omitted.

[0166] like Figure 13 As shown, in this embodiment, the semiconductor element 3 is arranged upside down compared to embodiment 1. Specifically, in this embodiment, the circuit section 32 is disposed on the upper surface of the semiconductor substrate 31. The upper surface of the semiconductor element 3 is the upper surface of the circuit section 32, and the lower surface of the semiconductor element 3 is the lower surface of the semiconductor substrate 31.

[0167] The upper surface of semiconductor element 3 and the lower surface of oscillator 4 are joined by adhesive D1.

[0168] The lower surface of the semiconductor element 3 and the upper surface of the base 2 are joined by adhesive D2. Specifically, the lower surface of the semiconductor element 3 and the first connection wiring 211, which serves as a shielding wiring 20d and is disposed on the upper surface of the base 2, are joined via adhesive D2. The shielding wiring 20d will be described later.

[0169] like Figure 13 and Figure 14 As shown, a first connection terminal 321, a second connection terminal 322, a third connection terminal 323, a fourth connection terminal 324, a fifth connection terminal 325, and a sixth connection terminal 326 are disposed on the upper surface of the semiconductor element 3.

[0170] like Figure 14 and Figure 15 As shown, a first connecting wire 211, a second connecting wire 212, a third connecting wire 213 and a fourth connecting terminal 324 are arranged on the upper surface of the base 2.

[0171] like Figure 13 and Figure 14As shown, the first connection terminal 321 and the first connection wiring 211 are electrically connected via a conductive lead W4. The second connection terminal 322 and the second connection wiring 212 are electrically connected via a conductive lead W5. The third connection terminal 323 and the third connection wiring 213 are electrically connected via a conductive lead W6. The fourth connection terminal 324 and the fourth connection wiring 214 are electrically connected via a conductive lead W7.

[0172] Furthermore, the fifth connection terminal 325 disposed on the upper surface of the semiconductor element 3 and the first electrode terminal 63 disposed on the upper surface of the oscillator 4 are electrically connected via a conductive lead W8. The sixth connection terminal 326 disposed on the upper surface of the semiconductor element 3 and the second electrode terminal 64 disposed on the upper surface of the oscillator 4 are electrically connected via a conductive lead W9.

[0173] In addition, the first connection terminal 321 disposed on the upper surface of the semiconductor element 3 and the third electrode terminal 65 disposed on the upper surface of the oscillator 4 are electrically connected via a conductive lead W10.

[0174] Next, the first wiring 101d, 102d, the second wiring 103d, and the shielding wiring 20d of the vibration device 1d will be described.

[0175] First, let’s explain the first wiring 101d and 102d.

[0176] like Figure 13 and Figure 14 As shown, in this embodiment, the first drive wiring 101d of the first wirings 101d and 102d has a first electrode terminal 63 disposed on the upper surface of the oscillator 4 and a lead W8 electrically connecting the first electrode terminal 63 to a fifth connection terminal 325 disposed on the upper surface of the semiconductor element 3. The second drive wiring 102d of the first wirings 101d and 102d has a second electrode terminal 64 disposed on the upper surface of the oscillator 4 and a lead W9 electrically connecting the second electrode terminal 64 to a sixth connection terminal 326 disposed on the upper surface of the semiconductor element 3.

[0177] Next, the second wiring 103d will be explained.

[0178] like Figure 13 and Figure 14 As shown, in this embodiment, the second wiring 103d has a second external terminal 222 disposed on the lower surface of the base 2, a second connecting wiring 212 disposed on the upper surface of the base 2, a through hole 232 electrically connecting the second external terminal 222 and the second connecting wiring 212, and a lead W5 electrically connecting the second connecting wiring 212 and the second connecting terminal 322 disposed on the upper surface of the semiconductor element 3.

[0179] Next, the shielded wiring 20d will be explained.

[0180] In this embodiment, the first connecting wire 211 disposed on the upper surface of the base 2 functions as a shielding wire 20d.

[0181] like Figure 14 and Figure 15 As shown, the first connection wiring 211 has a region that overlaps with the semiconductor element 3 when viewed from above. This region has approximately the same shape as the semiconductor element 3 when viewed from above. The portion of the first connection wiring 211 that overlaps with the semiconductor element 3 when viewed from above functions as a shielding wiring 20d.

[0182] like Figure 13 As shown, in this embodiment, the first connecting wire 211, which serves as the shielding wire 20d, is disposed, for example, between the first electrode terminal 63 and the second electrode terminal 64 of the first wires 101d and 102d and the second external terminal 222 of the second wire 103d. Furthermore, the first connecting wire 211, which serves as the shielding wire 20d, is disposed, for example, between the leads W8 and W9 of the first wires 101d and 102d and the second external terminal 222 of the second wire 103d.

[0183] In other words, the first connecting wire 211, which is a shielded wire 20d, is disposed between at least a portion of the first wires 101d and 102d and at least a portion of the second wire 103d.

[0184] In this way, by configuring the first connecting wire 211, which serves as the shielding wire 20d, between at least a portion of the first wires 101d and 102d and at least a portion of the second wire 103d, the difference between the parasitic capacitance between the first driving wire 101d and the second wire 103d and the parasitic capacitance between the second driving wire 102d and the second wire 103d can be reduced. Therefore, the variation in output frequency relative to the variation in power supply voltage is reduced, and a vibration device 1d with good frequency power supply characteristics can be provided.

[0185] As described above, according to this embodiment, even with a structure that uses wire bonding to electrically connect the semiconductor element 3 and the base 2, the same effect as in embodiment 1 can be obtained by configuring a first connecting wire 211 as a shielding wire 20d between the first wires 101d, 102d and the second wire 103d.

[0186] The vibration devices 1 to 1d have been described above according to embodiments 1 to 5. However, the present invention is not limited thereto, and the structure of each part can be replaced with any structure having the same function. In addition, other arbitrary components can be added to the present invention. Furthermore, the embodiments can be appropriately combined.

[0187] For example, the structure of embodiment 4 can also be applied to embodiments 1 to 3.

[0188] Alternatively, shielded wiring 20-20d may be connected to ground potential, but it may not be connected to ground potential. Shielded wiring 20-20d may also be kept at a constant potential other than ground potential.

Claims

1. A vibration device comprising, in sequence, a base, a semiconductor element having an oscillation circuit, and an oscillator having a first excitation electrode and a second excitation electrode, wherein the vibration device has: A first wiring connection is provided to electrically connect the first excitation electrode to the semiconductor element; The second wiring connects the second excitation electrode to the semiconductor element. The second wiring will be configured to electrically connect the external output terminal of the base to the semiconductor element; as well as Shielded wiring is disposed between at least a portion of the first wiring and at least a portion of the second wiring, and is disposed between at least a portion of the first wiring and at least a portion of the second wiring. At least a portion of the first wiring, at least a portion of the second wiring, at least a portion of the second wiring, and at least a portion of the shielding wiring are disposed on the same side of the base.

2. The vibration device according to claim 1, wherein, The shielding wiring is disposed on the surface of the base opposite to the semiconductor element.

3. The vibration device according to claim 1, wherein, The base is a multilayer substrate. At least a portion of the shielding wiring is disposed between the layers of the multilayer substrate.

4. The vibration device according to claim 3, wherein, The second wiring has a first side along the first direction and a second side along the second direction intersecting the first direction. The shielding wiring disposed between the layers has a third side along the first side and a fourth side along the second side.

5. The vibration device according to claim 4, wherein, The shielding wiring configured between the layers extends to the side of the base.

6. The vibration device according to claim 5, wherein, The shielding wiring disposed between the layers extends to the sides of the base in the first and second directions.

7. The vibration device according to any one of claims 3 to 6, wherein, The vibration device has a through-hole that is electrically connected to the shielding wiring disposed between the layers.

8. The vibration device according to claim 1, wherein, The shielded wiring is disposed between all of the first wiring and all of the second wiring, and is disposed between all of the second wiring and all of the second wiring.

9. The vibration device according to claim 1, wherein, The semiconductor element has a constant potential layer that is maintained at a constant potential. The shielding wiring is the constant potential layer of the semiconductor element.

10. The vibration device according to claim 1, wherein, The oscillator has a cover and a base, and a storage space for accommodating the vibrating element is formed between the base and the cover. The shielding wiring is the cover of the vibrator.

11. The vibration device according to claim 10, wherein, The cover is electrically connected to the semiconductor element via a conductive adhesive.

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