A method for tracing a solar cell and a solar cell

Abstract

The application relates to a solar cell tracing method and a solar cell. The solar cell tracing method comprises the following steps: splitting an original code of a silicon wafer of a solar cell into at least two code segments; arranging at least two identification codes in a region where no grid lines are arranged on the silicon wafer, and each identification code stores a corresponding code segment; reading the code segments stored by the identification codes through a code reading device; and integrating the read code segments to form the original code. The original code is split and stored in multiple identification codes, so that the required memory of each identification code is reduced, the size of the identification code is reduced, and the possibility of interference between the identification code and the grid lines of the silicon wafer is reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of photovoltaic technology, in particular to a solar cell tracing method and a solar cell. BACKGROUND

[0002] With the development of technology, the application of photovoltaic technology is more and more widely, and in the processing of solar cells, in order to trace the production process of the silicon wafer, a two-dimensional code or other identification code is usually arranged on the surface of the silicon wafer. However, the two-dimensional code or other identification code will affect the arrangement of the grid lines, and thus affect the electrical performance of the solar cell. SUMMARY

[0003] The present application provides a solar cell tracing method and a solar cell, which are used to solve the problem that the identification code of the solar cell will interfere with the grid lines.

[0004] The present application provides a solar cell tracing method, which comprises the following steps:

[0005] Splitting an original code of a silicon wafer of a solar cell into at least two code segments;

[0006] Arranging at least two identification codes in a region of the silicon wafer where no grid lines are arranged, and each of the identification codes stores a corresponding code segment;

[0007] Reading the code segments stored in each of the identification codes by a code reading device;

[0008] Integrating the read code segments to form the original code.

[0009] By splitting the original code and storing it in multiple identification codes, the memory required by each identification code can be reduced, which is beneficial to reducing the size of the identification code and reducing the possibility of interference between the identification code and the grid lines of the silicon wafer. Thus, the identification code and the grid lines can avoid each other, and the possibility of disconnection of the grid lines is reduced, which is beneficial to improving the overall performance of the solar cell and the current collecting ability of the grid lines, and thus improving the overall performance of the solar cell.

[0010] In a possible implementation, the step of splitting the original code of the silicon wafer of the solar cell into at least two code segments comprises the following steps:

[0011] Numbering the code segments obtained by splitting.

[0012] By such a design, it is more convenient to determine the position of each code segment, which is beneficial to improving the efficiency of integrating the original code and more in line with the actual use requirements.

[0013] In a possible implementation, the step of arranging at least two identification codes in the area of the silicon wafer where no gate line is arranged, each of the identification codes storing different encoding segments, further comprises:

[0014] Each of the identification codes stores the corresponding number of the encoding segment.

[0015] Storing the number and the encoding segment in the same identification code 3 can facilitate obtaining the corresponding number of the encoding segment.

[0016] In a possible implementation, the step of reading the encoding segment stored in each of the identification codes by the code reading device further comprises:

[0017] Reading the number stored in each of the identification codes.

[0018] By numbering each encoding segment and storing the same in the corresponding identification code 3, the encoding segment and the corresponding number thereof can be quickly obtained when reading, and the position of the encoding segment can be quickly obtained according to the number when integrating, thereby facilitating improving the efficiency of integrating to form the original code and being more in line with actual use requirements.

[0019] In a possible implementation, the step of integrating each of the read encoding segments to form the original code comprises:

[0020] According to the number, the encoding segments are sorted and integrated.

[0021] By identifying the number and adjusting the order of the corresponding encoding segment according to the number, the efficiency of integrating to form the original code is improved, the accuracy of integration is improved, and the actual use requirements are more in line with.

[0022] In a possible implementation, the step of arranging at least two identification codes in the area of the silicon wafer where no gate line is arranged, each of the identification codes storing the corresponding encoding segment, comprises:

[0023] Arranging more than two identification codes in the area of the silicon wafer where no gate line is arranged, at least two of the identification codes storing the same encoding segment.

[0024] Generally, after the silicon wafer is provided with the identification code, the silicon wafer needs to be subjected to operations such as texturing and film plating, which can easily damage the identification code, resulting in identification error or failure to identify. By arranging at least two identification codes storing the same encoding segment, the accuracy of identification is improved, and when one of the identification codes is damaged, the other identification code can still be identified, thereby reducing the possibility that the identification code cannot be correctly identified due to damage of the identification code in the processing process, resulting in failure to correctly read the original code.

[0025] In a possible implementation, the encoding section includes at least one original code bit and at most five original code bits.

[0026] The more original code bits in the encoding section, the larger the capacity of the identification code required, resulting in an increase in the volume of the identification code. When the number of bits in the encoding section is greater than five, the length of the identification code for storing the encoding section is likely to be greater than the distance between adjacent grid lines. Therefore, the encoding section usually does not exceed five original code bits.

[0027] In a possible implementation, the step of arranging at least two identification codes in the area of the silicon wafer where no grid lines are arranged includes:

[0028] The identification codes are arranged between adjacent grid lines of the silicon wafer by a laser device.

[0029] The laser device can form features such as recesses on the surface of the silicon wafer. The identification codes are formed by the combination of multiple features. The identification codes are located between adjacent grid lines, that is, the positions of the identification codes avoid the positions of the grid lines when being processed, and the area for arranging the grid lines is reserved on the surface of the silicon wafer.

[0030] The present application also provides a solar cell including a silicon wafer having an original code, which is traced by the tracing method of the solar cell according to any one of the above.

[0031] In a possible implementation, the silicon wafer is provided with a plurality of identification codes, and the identification codes are located between adjacent grid lines of the silicon wafer.

[0032] The distance between the identification codes and the grid lines is m, and 0 mm < m ≤ 0.2 mm.

[0033] A plurality of identification codes for storing information are arranged on the silicon wafer to reduce the volume of a single identification code and reduce the possibility of interference between the identification codes and the grid lines. The distance between the identification codes and the grid lines is between 0 mm and 0.2 mm, which can reduce the possibility of mutual influence between the identification codes and the grid lines when the identification codes and the grid lines are processed.

[0034] In a possible implementation, the length of the identification code is 1 mm to 2.8 mm.

[0035] The distance between adjacent grid lines is usually 1.2 mm to 3 mm. In order to reduce the possibility of interference between the identification codes and the grid lines, the length of the identification code can be adjusted to 1 mm to 2.8 mm according to the actual distance between the grid lines. This not only facilitates the arrangement of the identification codes between adjacent grid lines, but also facilitates the distance between the identification codes and the grid lines, thereby further reducing the possibility of interference between the identification codes and the grid lines.

[0036] The application relates to a solar cell tracing method and a solar cell, wherein the solar cell tracing method comprises splitting an original code of a silicon wafer of the solar cell into at least two code segments; arranging at least two identification codes in a region of the silicon wafer where no grid lines are arranged, each identification code storing a corresponding code segment; reading the code segments stored by the identification codes by using a code reading device; and integrating the read code segments to form the original code. By splitting the original code and storing the code segments in the identification codes, the memory required by each identification code can be reduced, the size of the identification codes can be reduced, and the possibility of interference between the identification codes and the grid lines of the silicon wafer can be reduced.

[0037] It should be understood that the above general description and the following detailed description are only exemplary and cannot limit the application. BRIEF DESCRIPTION OF DRAWINGS

[0038] Figure 1 A flowchart of a solar cell tracing method provided by an embodiment of the application;

[0039] Figure 2 A partial schematic view of a silicon wafer of a solar cell provided by an embodiment of the application.

[0040] Reference signs:

[0041] 1 - silicon wafer;

[0042] 2 - grid line;

[0043] 3 - identification code.

[0044] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and serve to explain the principles of the application together with the specification. DETAILED DESCRIPTION

[0045] In order to better understand the technical solutions of the application, the embodiments of the application are described in detail below with reference to the drawings.

[0046] It should be clear that the described embodiments are only some of the embodiments of the application, rather than all the embodiments. Based on the embodiments in the application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the application.

[0047] The terms used in the embodiments of the application are only for the purpose of describing specific embodiments, and are not intended to limit the application. The singular forms "a", "an" and "the" used in the embodiments of the application and the appended claims are also intended to include the plural forms, unless the context clearly indicates otherwise.

[0048] It should be understood that the term "and / or" used herein is merely an association relationship of the associated objects, which means that there can be three relationships, for example, A and / or B, which can represent the three cases of A alone, A and B together, and B alone. In addition, the character " / " herein generally represents an "or" relationship between the front and rear associated objects.

[0049] It should be noted that the terms "upper", "lower", "left", "right" and the like described in the embodiments of the present application are described from the angle shown in the drawings, and should not be understood as a limitation on the embodiments of the present application. In addition, in the context, it should also be understood that when referring to an element connected to another element "on" or "under", it can be directly connected to another element "on" or "under" or indirectly connected to another element "on" or "under" through an intermediate element.

[0050] With the development of technology, the application of photovoltaic technology is more and more widely, especially the application of solar cells. In the process of producing solar cells, the silicon wafer of the solar cell is usually provided with a corresponding identification code, and the corresponding silicon wafer is identified through the identification code, so as to trace the production information of the silicon wafer. However, the identification code provided on the surface of the silicon wafer is easy to interfere with the grid lines on the surface of the silicon wafer, resulting in the disconnection of the grid lines at the identification code, which destroys the integrity of the solar cell, reduces the current collection capacity of the region, affects the electrical performance of the region, and further affects the overall performance of the solar cell.

[0051] In view of this, the embodiments of the present application provide a solar cell tracing method and a solar cell, which are used to solve the problem that the identification code and the grid lines are easy to interfere with each other.

[0052] As shown in Figure 1 and Figure 2 The embodiments of the present application provide a solar cell tracing method, wherein the solar cell tracing method comprises:

[0053] S1, splitting the original code of the silicon wafer 1 of the solar cell into at least two code segments;

[0054] S2, setting at least two identification codes 3 in the area where the silicon wafer 1 is not provided with the grid lines 2, and the identification code 3 is used to store the corresponding code segment;

[0055] S3, reading the code segment stored by the identification code 3 through a code reading device;

[0056] S4, integrating the read code segments into the original code.

[0057] The original code for silicon wafer 1 can include multiple characters, such as a string composed of one or more commonly used symbols, including letters, numbers, and signs. Different silicon wafers 1 have different original codes to distinguish them, or the original codes for silicon wafers 1 produced in the same batch can be identical to distinguish between different batches. Specifically, the information stored in the original code can be process information for solar cell fabrication and / or process parameters for solar cell manufacturing. For example, basic information such as the size, thickness, resistivity, doping concentration, and semiconductor type of silicon wafer 1 can be encoded and included as part of the original code. Similarly, parameters of processes such as texturing, coating, and other technical processes can be encoded and included as part of the original code. Relevant personnel can obtain relevant information about the solar cell through the original code. The specific information stored in the original code can be set according to actual conditions.

[0058] Taking the original code "ABCD" as an example, in step S1, the original code can be split into two code segments, "AB" and "CD". The splitting can be based on the information stored in each code. The resulting code segments can store different types of information or the same information. For example, "AB" and "CD" can store either the process information for solar cell fabrication or related process parameters mentioned above. In step S2, two identification codes 3 can be set on silicon wafer 1. One identification code 3 stores the code segment "AB", and the other identification code 3 stores the code segment "CD". Specifically, the code segments can be compiled using Data Matrix encoding rules to convert characters into graphics, which are then set on the surface of silicon wafer 1 as identification code 3. When the original code of silicon wafer 1 needs to be read, the identification code 3 is compiled using a code reading device to read the code segment stored in it. The code reading device can be a computer containing a compilation program. After obtaining each code segment, they are integrated to form the original code. This integration step can be performed within the reading device, on another device, or manually.

[0059] By adopting the above traceability method, the original code is split to reduce the amount of information stored in each identification code 3, thereby reducing the capacity required for each identification code 3, which in turn reduces the size of the identification code 3 and the possibility of interference between the identification code 3 and the grid line 2. The identification code 3 can be set at a position on the silicon wafer 1 where no grid line is set, such as the harpoon position, thereby further improving the problem of the grid line 2 being disconnected at the location of the identification code 3. This is beneficial to improving the overall integrity of the solar cell and the current collection capability of the grid line 2, thereby improving the overall performance of the solar cell.

[0060] In one possible implementation, step S1 may further include:

[0061] S11, numbering the split encoding segments.

[0062] When the original encoding is split into multiple encoding segments, the encoding segments can be numbered to facilitate determining the positions of the encoding segments when integrating, thereby facilitating forming the original encoding. For example, when the original encoding "ABCD" is split into two encoding segments "AB" and "CD", "AB" can be numbered as 1 and "CD" can be numbered as 2 in sequence. When integrating, the order of the encoding segments can be adjusted according to the numbers to obtain the original encoding.

[0063] Such design facilitates determining the positions of the encoding segments, thereby facilitating improving the efficiency of integrating to form the original encoding and being more in line with actual use requirements.

[0064] In a possible implementation, step S2 can include:

[0065] S21, each identification code 3 stores the number corresponding to the encoding segment.

[0066] Storing the number and the encoding segment in the same identification code 3 can facilitate obtaining the number corresponding to the encoding segment. For example, the identification code 3 can store the number "1" and the encoding segment "AB" at the same time. Such design facilitates improving the efficiency of integrating to form the original encoding.

[0067] In a possible implementation, step S3 can include:

[0068] S31, reading the number stored in each identification code 3.

[0069] By reading the number and the encoding segment at the same time by the reading device, for example, the reading device can read "1AB" and "2CD" from two identification codes 3 respectively, and the position of the encoding segment can be known according to the read number, thereby facilitating improving the efficiency of integrating to form the original encoding. When setting the reading or integrating program, the Nth position of the characters obtained from the identification code 3 can be set as the number and the rest as the encoding segment. When the identification code 3 stores multiple encoding segments, for example, the identification code 3 stores two encoding segments "AB" and "CD" at the same time, wherein the number of "AB" is 1 and the number of "CD" is 2, the information stored in the identification code 3 can be "1AB2CD". When reading or integrating, the first position and the fourth position of the information stored in the identification code 3 can be set as the numbers of the encoding segments, the second position and the third position can be set as the encoding segment corresponding to the first number, and the fifth position and the sixth position can be set as the encoding segment corresponding to the fourth number.

[0070] By numbering each encoding segment and storing in the corresponding identification code 3, the encoding segment and its corresponding number can be quickly obtained when reading, and the position of the encoding segment can be quickly obtained according to the number when integrating, thereby facilitating to improve the efficiency of integrating to form the original code, and more in line with the actual use requirements.

[0071] In a possible implementation, step S4 can include:

[0072] S41, sorting and integrating the encoding segments according to the read numbers.

[0073] By identifying the number and adjusting the order of the corresponding encoding segment according to the number, it is beneficial to improve the efficiency of integrating to form the original code, improve the accuracy of integration, and more in line with the actual use requirements.

[0074] Specifically, in a possible implementation, step S2 can further include:

[0075] S22, setting the identification code 3 between the adjacent grid lines 2 on the silicon wafer 1 by the laser equipment.

[0076] The laser equipment can form a recess or other features on the surface of the silicon wafer 1, and the multiple features are combined to form the identification code 3. The identification code 3 is located between the adjacent grid lines 2, that is, the position of the identification code 3 avoids the position of the grid line 2, and a region for setting the grid line 2 is reserved on the surface of the silicon wafer 1.

[0077] In a possible implementation, step S2 can further include:

[0078] S23, setting two or more identification codes 3 in the region of the silicon wafer 1 where no grid line is set, and at least two identification codes 3 store the same encoding segment.

[0079] Generally, after setting the identification code 3 on the silicon wafer 1, the silicon wafer 1 needs to be subjected to texturing, film plating and other operations. Taking the texturing process as an example, in the texturing process, the silicon wafer 1 needs to be subjected to etching treatment to adjust the reflectivity of the silicon wafer 1. In the etching process, the flatness of the surface of the silicon wafer 1 is affected. When the texturing process is performed at the position where the identification code 3 is set, the identification code 3 is easily damaged, resulting in identification error or inability to identify. By setting at least two identification codes 3 storing the same encoding segment, it is beneficial to improve the accuracy of identification. When one of the identification codes 3 is damaged, the other identification code 3 can still be identified, thereby reducing the possibility that the identification code 3 cannot be correctly identified due to the damage of the identification code 3 in the processing process, resulting in the inability to correctly read the original code.

[0080] In a possible implementation, each encoding segment includes at least one original code and at most five original codes.

[0081] The more the original code bits of the coding section, the larger the capacity of the identification code 3 required, resulting in the increase of the volume of the identification code 3. When the number of bits of the coding section is greater than five, the length of the identification code 3 storing the coding section is prone to be greater than the interval between the adjacent grid lines 2. Therefore, the original coding of the coding section is usually not more than five bits.

[0082] The method for tracing the solar cell provided by the embodiment of the present application splits the original coding of the silicon wafer 1 and stores it in at least two identification codes 3, so as to reduce the amount of information stored in each identification code 3, thereby reducing the capacity required by the identification code 3, facilitating the reduction of the size of each identification code 3 and the space required for setting the identification code 3, so as to reduce the possibility of the interference between the identification code 3 and the grid lines 2 of the silicon wafer 1, facilitating the mutual avoidance between the grid lines 2 and the identification code 3, thereby reducing the possibility of the disconnection of the grid lines 2, and facilitating the improvement of the integrity of the solar cell and the current collection capability, so as to realize the tracing of the solar cell while improving the overall performance of the solar cell.

[0083] The embodiment of the present application further provides a solar cell, which comprises a silicon wafer 1, and the silicon wafer 1 has original coding. The silicon wafer 1 can be traced by the above tracing method.

[0084] In a possible implementation, the silicon wafer 1 is provided with a plurality of identification codes 3, and each identification code 3 is located between adjacent grid lines 2. Specifically, the identification code 3 can be arranged between adjacent sub-grid lines. The distance between the identification code 3 and the grid line 2 is m, and 0 millimeter < m ≤ 0.2 millimeter.

[0085] By arranging a plurality of identification codes 3 for storing information on the silicon wafer 1, the volume of each identification code 3 is reduced, and the possibility of the interference between the identification code 3 and the grid line 2 is reduced. The distance between the identification code 3 and the grid line 2 is between 0 millimeter and 0.2 millimeter, which can reduce the possibility of the mutual influence between the identification code 3 and the grid line 2 during the processing of the identification code 3 and the arrangement of the grid line 2.

[0086] It should be noted that the distances between the two sides of the identification code 3 and the adjacent grid lines 2 can be equal or not equal. For example, the distances between the two sides of the identification code 3 and the adjacent grid lines 2 can both be 0.1 millimeter, or the distance between one side of the identification code 3 and the adjacent grid line 2 can be 0.05 millimeter, and the distance between the other side and the adjacent grid line 2 can be 0.15 millimeter. The distances between the two sides of the identification code 3 and the adjacent grid lines 2 can be designed according to actual conditions.

[0087] Generally, the identification code 3 is processed by a laser device, and the laser device processes a plurality of recesses on the surface of the silicon wafer 1 to form the corresponding identification code 3. Since the surface of the silicon wafer 1 is processed during the laser processing, when the distance between the identification code 3 and the grid lines 2 is too small, the recesses formed by the laser processing will affect the arrangement of the grid lines 2, thereby reducing the stability of the grid lines 2 and causing the grid lines 2 to easily fall off or break, which causes the performance of the solar cell to be problematic or even unable to be normally used. In addition, the grid lines 2 may block the identification code 3, so that the reading device cannot read the identification code 3, so that the solar cell cannot be traced. Therefore, a certain distance needs to be reserved between the identification code 3 and the grid lines 2 to reduce the possibility of mutual influence between the identification code 3 and the grid lines 2.

[0088] In a possible implementation, the length of the side of the identification code 3 is 1 mm to 2.8 mm.

[0089] The distance between the adjacent grid lines 2 is generally 1.2 mm to 3 mm. In order to reduce the possibility of interference between the identification code 3 and the grid lines 2, the length of the side of the identification code 3 can be adjusted to 1 mm to 2.8 mm according to the actual distance between the grid lines 2. This not only facilitates the arrangement of the identification code 3 between the adjacent grid lines 2, but also facilitates the identification code 3 and the grid lines 2 to have a certain distance, thereby further reducing the possibility of interference between the identification code 3 and the grid lines 2.

[0090] Taking the original code of the silicon wafer 1 as twenty bits and the distance between the adjacent grid lines 2 as 1.5 mm as an example, generally, the original code is compiled and stored in one identification code 3, and the identification code 3 needs to be at least a 20*20 matrix point, and the length of the side is 2.16 mm. Since the distance between the grid lines 2 is 1.5 mm, at least one grid line 2 needs to be disconnected at the identification code 3 when the identification code 3 is arranged. In order to make the edge of the identification code 3 and the grid lines 2 have enough distance, two grid lines 2 are usually disconnected during processing, which has a greater impact on the whole solar cell.

[0091] The scheme provided by the application can reduce the capacity of each identification code 3 by splitting the original code into code segments and storing the corresponding code segments in multiple identification codes 3, so that a 10*10 matrix point can be used as the identification code 3, the side length of the identification code 3 is usually 1.2 mm, which greatly reduces the size of the identification code 3, so that the identification code 3 can be arranged between adjacent grid lines 2. For example, the original code is split into a code segment every two bits, and the code segments are numbered, and the code segments and the corresponding numbers are stored in the corresponding identification code 3, that is, ten identification codes 3 can be arranged on the silicon wafer 1, each identification code 3 stores a code segment and a number corresponding to the code segment, the first identification code 3 stores the information "1AB", and the second identification code 3 stores the information "2CD", wherein "AB" is a code segment, "1" is the number of the code segment, and "2CD" is the same. After reading by the reading device, the corresponding code segment and number can be obtained, and the code segments are integrated according to the number, for example, the information of the first identification code 3 and the second identification code 3 is sorted by the number to obtain "ABCD", and the information stored in the area identification code 3 is continuously read and integrated to obtain a twenty-bit original code, so as to obtain the related information of the solar cell.

[0092] In actual processing, the size of the identification code 3, the distance between the grid lines 2, and the process of the laser equipment can be adjusted. Through actual detection, when the laser spot size corresponds to the laser pit diameter, when the distance between the grid lines 2 is 1.5 mm, a 10*10 point matrix can be arranged between adjacent grid lines 2 to form a square identification code 3 with a side length of 1 mm. When the identification code 3 between adjacent grid lines 2 is arranged as a 12*12 matrix point, and the code segment is encoded according to the encoding rule of Data Matrix, the identification code formed can store six characters, i.e. six letters or numbers, and the stored information can be six original codes, or one number and five original codes, etc. When the distance between the grid lines 2 is 2 mm, the identification code 3 can be arranged as a 16*16 matrix point, and when the code segment is encoded according to the encoding rule of Data Matrix, up to sixteen characters, i.e. sixteen letters or numbers, can be stored. The number of points in the point matrix of the identification code 3 and the number of characters stored in the identification code 3 can be adjusted according to actual conditions.

[0093] The application provides a solar cell tracing method and a solar cell. The solar cell tracing method comprises the following steps: splitting an original code of a silicon wafer 1 of the solar cell into at least two code segments; arranging at least two identification codes 3 in a region where no grid lines 2 are arranged on the silicon wafer 1, and each identification code 3 stores a corresponding code segment; reading the code segments stored by the identification codes 3 through a code reading device; and integrating the read code segments to form the original code. The original code is split and stored in the plurality of identification codes 3, so that the memory required by each identification code 3 is reduced, the size of the identification code 3 is reduced, and the possibility of interference between the identification code 3 and the grid lines 2 of the silicon wafer 1 is reduced.

[0094] The preferred embodiments of the application are described above, but the application is not limited to the above. Any modifications, equivalent replacements, improvements and the like made within the spirit and principle of the application shall be included in the protection scope of the application.

Claims

1. A method for tracing solar cells, characterized in that, The traceability method for the solar cells includes: The original coding of the silicon wafer of the solar cell is split into at least two coding segments; At least two identification codes are provided in the area of ​​the silicon wafer where no gate lines are provided, and each identification code stores the corresponding coding segment. The code segment stored in each of the identification codes is read by a code reading device; The read encoded segments are integrated to form the original code; The steps of splitting the raw code of a solar cell's silicon wafer into at least two code segments include: The resulting coded segments are numbered. The step of setting at least two identification codes in the area of ​​the silicon wafer where no gate lines are provided, and storing different coding segments in each of the identification codes, further includes: Each of the aforementioned identification codes stores the number corresponding to the encoded segment; The step of reading the encoded segments stored in each of the identification codes using a code reading device further includes: Read the number stored in each of the aforementioned identification codes; The step of integrating the read encoded segments to form the original code includes: The encoded segments are sorted and integrated according to the read numbers.

2. The traceability method for solar cells according to claim 1, characterized in that, The step of setting at least two identification codes in the area of ​​the silicon wafer where no gate lines are provided, and storing the corresponding encoded segment for each identification code, includes: Two or more identification codes are provided in the area of ​​the silicon wafer where no gate lines are provided, and at least two of the identification codes store the same coding segment.

3. The traceability method for solar cells according to claim 1, characterized in that, The encoded segment includes at least one bit of the original code and at most five bits of the original code.

4. The traceability method for solar cells according to claim 1, characterized in that, The step of setting at least two identification codes in a region of the silicon wafer where no gate lines are provided, and storing different coding segments in each of the identification codes, includes: Each identification code is set between adjacent gate lines on the silicon wafer using a laser device.

5. A solar cell, characterized in that, The solar cell includes a silicon wafer having an original code, which is traceable using the solar cell traceability method according to any one of claims 1 to 4.

6. The solar cell according to claim 5, characterized in that, The silicon wafer is provided with multiple identification codes, which are located between adjacent gate lines of the silicon wafer; The distance between the identification code and the grid line is m, where 0 mm < m ≤ 0.2 mm.

7. The solar cell according to claim 5, characterized in that, The side length of the identification code is 1 mm to 2.8 mm.

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