A method for analyzing temperature data of a tiny temperature-measuring crystal

Abstract

The present application belongs to the technical field of temperature data measurement of thermometric crystals, and specifically relates to a method for analyzing temperature data of micro-thermometric crystals, which designs measurement tooling and thermometric crystal fixtures, performs height measurement positioning and diffraction plane adjustment during the analysis process, and then performs diffraction peak measurement and temperature analysis to efficiently and accurately obtain the temperature of the thermometric crystal.

Description

Technical Field

[0001] The present application belongs to the technical field of temperature data measurement of thermometric crystals, and specifically relates to a method for analyzing temperature data of a micro-temperature measuring crystal. Background Art

[0002] Thermocouples are generally used to measure the wall temperature of various aircraft engine components and the airflow temperature of each system. However, due to the complex structure of aircraft engines, thermocouples cannot be installed in some locations. Therefore, a micro-sized, light-weight, leadless temperature measurement crystal sensor is designed to measure the wall temperature of various aircraft engine components and the airflow temperature of each system.

[0003] Different from the temperature measurement by thermocouple, the temperature measurement by temperature measuring crystal sensor requires the use of X-ray diffraction material analysis method to analyze the temperature of the temperature measuring crystal and obtain the measured temperature, which mainly includes:

[0004] The powder X-ray diffraction material analysis method can only analyze non-directional powdered thermometric crystals;

[0005] The thin film X-ray diffraction material analysis method can only analyze large-sized thin film temperature measuring crystals. When the temperature measuring crystal size is less than 1 mm, it is difficult to obtain high-precision diffraction data.

[0006] This application is proposed in view of the above-mentioned technical defects.

[0007] It should be noted that the disclosure of the above background technology content is only used to assist in understanding the inventive concept and technical solution of the present invention, and it does not necessarily belong to the prior art of this patent application. In the absence of clear evidence that the above content has been disclosed on the filing date of this application, the above background technology should not be used to evaluate the novelty and creativity of this application. Summary of the Invention

[0008] The purpose of this application is to provide a method for analyzing temperature data of a micro-temperature measuring crystal to overcome or alleviate at least one of the technical deficiencies of the known technologies.

[0009] The technical solution of this application is:

[0010] A method for analyzing temperature data of a micro-temperature measuring crystal, comprising:

[0011] Processing a cylindrical measuring block and processing a through hole in the center of the cylindrical measuring block;

[0012] Process an annular gasket, the inner diameter of which is equal to the diameter of the central through hole of the cylindrical measuring block, the outer diameter of which is equal to the diameter of the cylindrical measuring block, and the thickness of which is 1 / 2 of the thickness of the temperature measuring crystal;

[0013] Place the annular gasket horizontally on the glass plate, place the temperature measuring crystal in the center of the center hole of the annular gasket, fill the center hole with plasticine, align the columnar measuring block and place it on the annular gasket, and fill the through hole with packaging glue;

[0014] After the encapsulation glue solidifies, remove the columnar measuring block, turn it over, and clean the plasticine on the temperature measuring crystal;

[0015] The cylindrical measuring block is attached to the center of the X-ray diffractometer platform. The X-ray diffractometer has the functions of x-axis and y-axis deflection and z-axis rotation. The X-ray diffraction surface is located on the plane where the z-axis and y-axis are located.

[0016] Adjust the X-rays to small angles of incidence and emission, call the X-ray diffractometer measurement program to perform z-scan, determine the z-axis height position when the X-rays are blocked, call the X-ray diffractometer measurement program to perform θ / 2θ scanning, and complete the z-axis height position positioning when a valid diffraction peak can be obtained;

[0017] The X-ray diffractometer measurement program is called to perform θ / 2θ scanning to obtain multiple diffraction peaks, among which the strongest diffraction peak is θ 11 ;

[0018] Adjust the X-ray incident and exit angles of the diffractometer to θ 11 Position, call the X-ray diffractometer measurement program to perform φ scanning, obtain two diffraction peaks φ1 and φ2, calculate the bisection angle

[0019] φ a =(φ2-φ1) / 2, φ1<φ2;

[0020] Turn the X-ray diffractometer platform φ axis to φ a Position, X-ray incident angle and exit angle maintain θ 11 The relative position remains unchanged, and the X-ray diffractometer measurement program is called to perform θ / θ scanning to obtain the diffraction peak θ 1a , calculate the deflection angle θ a =θ 11 -θ 1a ;

[0021] The platform φ axis of the X-ray diffractometer is turned to 90-φ a Position, x-axis turns to θ a Position, call the X-ray diffractometer measurement program to perform θ / 2θ scanning, and the new strongest diffraction peak is θ 11 , adjust the X-ray incident angle and exit angle of the diffractometer to θ 11 Position, call the X-ray diffractometer measurement program to perform φ scanning, when the diffraction line becomes a horizontal line and the intensity dispersion is less than 10%, complete the vertical adjustment of the temperature measuring crystal surface and the diffraction plane;

[0022] The φ axis of the X-ray diffractometer platform was rotated to 0°, 60°, 120°, 180°, 240°, and 300°. At each position, the X-ray diffractometer measurement program was called to perform θ / 2θ scanning to obtain multiple diffraction peaks. The two strongest diffraction peaks were selected. The average value of the six sets of data for each diffraction peak was calculated to obtain the Bragg diffraction angles θ1 and θ2 of the two strongest diffraction peaks.

[0023] Calculate the diffraction angle difference θ c =θ1-θ2, compared with the calibration data, and θ c The closest temperature value is the analysis temperature value.

[0024] According to at least one embodiment of the present application, in the above-mentioned method for analyzing temperature data of a micro-temperature-measuring crystal, the diameter of the columnar measurement block is 6 to 10 mm and the thickness is 2 mm.

[0025] According to at least one embodiment of the present application, in the above-mentioned method for analyzing temperature data of a micro-temperature-measuring crystal, the diameter of the through hole on the columnar measurement block is 1 to 2 mm.

[0026] This application has at least the following beneficial technical effects:

[0027] A method for analyzing temperature data of a tiny temperature-measuring crystal is provided. The method designs a measuring tool and a temperature-measuring crystal fixture. During the analysis process, height measurement positioning and diffraction plane adjustment are performed, and then diffraction peak measurement and temperature analysis are performed. The temperature of the temperature-measuring crystal is obtained efficiently and accurately, which can effectively overcome the defects of the existing technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 Schematic diagram of a temperature measurement crystal provided by an embodiment of the present application;

[0029] Figure 2 Schematic diagram of the composition and optical path of the X-ray diffractometer provided in the embodiment of the present application;

[0030] Figure 3 is a schematic diagram of the spatial axes of an X-ray diffractometer provided in an embodiment of the present application;

[0031] Figure 4 is a schematic diagram of a diffraction z-scan of an X-ray diffractometer provided in an embodiment of the present application;

[0032] Figure 5 is a schematic diagram of the diffraction θ / 2θ scanning of the X-ray diffractometer provided in the embodiment of the present application;

[0033] Figure 6 is a schematic diagram of a diffraction φ scan scan by an X-ray diffractometer provided in an embodiment of the present application;

[0034] Figure 7It is a schematic diagram of the X-ray diffractometer diffraction θ / θ scanning provided in the embodiment of the present application.

[0035] In order to better illustrate this embodiment, some parts of the drawings may be omitted, enlarged or reduced, and do not represent the size of the actual product. In addition, the drawings are only used for illustrative purposes and should not be understood as limitations on this patent. DETAILED DESCRIPTION

[0036] To make the technical solution and its advantages of the present application clearer, the technical solution of the present application will be described in further detail below in conjunction with the accompanying drawings. It should be understood that the specific embodiments described herein are only some embodiments of the present application and are only used to explain the present application, not to limit the present application. It should be noted that, for ease of description, only the parts related to the present application are shown in the accompanying drawings, and other related parts can refer to the general design. In the absence of conflict, the embodiments of the present application and the technical features in the embodiments can be combined with each other to obtain new embodiments.

[0037] In addition, unless otherwise defined, the technical or scientific terms used in the description of this application should have the ordinary meanings understood by those of ordinary skill in the art to which this application belongs. The words "upper," "lower," "left," "right," "center," "vertical," "horizontal," "inner," and "outer" used in the description of this application are only used to indicate relative directions or positional relationships, and do not imply that the device or component must have a specific orientation, be constructed, or operate in a specific orientation. When the absolute position of the described object changes, its relative positional relationship may also change accordingly. Therefore, they should not be understood as limitations on this application. The words "first," "second," "third," and similar terms used in the description of this application are used only for descriptive purposes to distinguish different components and should not be understood to indicate or imply relative importance. The words "one," "an," or "the" used in the description of this application should not be understood as absolute limitations on quantity, but should be understood as meaning the presence of at least one. The words "include" or "comprises" used in the description of this application mean that the element or object listed before the word includes the elements or objects listed after the word and their equivalents, but does not exclude other elements or objects.

[0038] In addition, it should be noted that, unless otherwise clearly stipulated and limited, the words "install", "connect", "connect" and similar terms used in the description of this application should be understood in a broad sense. For example, the connection can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, an indirect connection through an intermediate medium, or a connection between two components. Technical personnel in the field can understand their specific meanings in this application according to the specific circumstances.

[0039] The following is combined with Figures 1 to 7 , the temperature data analysis method of the micro-temperature measuring crystal provided in this application is further described in detail.

[0040] 1. Make measuring tooling

[0041] According to the sample size requirements of the X-ray diffractometer, a cylindrical measuring block is processed. The diameter of the cylindrical measuring block is usually 6 to 10 mm and the thickness is usually 2 mm. A through hole with a diameter of 1 to 2 mm is processed in the center of the cylindrical measuring block.

[0042] An annular gasket is processed, the inner diameter of which is equivalent to the diameter of the central through hole of the cylindrical measuring block, the outer diameter of which is equivalent to the diameter of the cylindrical measuring block, and the thickness of which is 1 / 2 of the thickness of the temperature measuring crystal. This solves the problem that it is difficult to perform z-axis height positioning of a tiny temperature measuring crystal with a size of less than 1 mm in X-ray diffraction.

[0043] 2. Install the temperature measuring crystal

[0044] Place the annular gasket horizontally on the glass plate, place the temperature measuring crystal in the center of the center hole of the annular gasket, fill the center hole with plasticine, align the columnar measuring block and place it on the annular gasket, and fill the through hole with packaging glue, as shown in the following figure: Figure 1 As shown;

[0045] After the encapsulation glue solidifies, remove the cylindrical measuring block, turn it over, and clean the plasticine on the temperature measuring crystal to ensure that the temperature measuring crystal is firmly bonded and located in the center of the cylindrical measuring block.

[0046] 3. Height measurement and positioning

[0047] The columnar measuring block is pasted on the center of the X-ray diffractometer platform. The X-ray diffractometer has the functions of x-axis and y-axis deflection and z-axis rotation. The X-ray diffraction plane, that is, the plane where the incident light and the outgoing light are located, is located on the plane where the z-axis and y-axis are located. Figure 2-3 As shown;

[0048] Adjust the X-ray to a small angle of incidence and emission, call the X-ray diffractometer measurement program to perform z scanning, and the platform scans the X-ray optical path along the z axis from bottom to top. When the X-ray is blocked, determine the z-axis height position, such as Figure 4 As shown;

[0049] Call the X-ray diffractometer measurement program to perform θ / 2θ scanning, and the incident light path and the outgoing light path are synchronized and scanned at equal angles along the z axis, such as Figure 5 As shown, when a valid diffraction peak can be obtained, the z-axis height position positioning is completed.

[0050] 4. Diffraction plane adjustment

[0051] 1) Call the X-ray diffractometer measurement program to perform θ / 2θ scanning to obtain multiple diffraction peaks, among which the strongest diffraction peak is θ 11 ;

[0052] 2) Adjust the X-ray incident and exit angles of the diffractometer to θ 11 Position, call the X-ray diffractometer measurement program to perform φ scanning, and the platform rotates around the z axis to scan, such as Figure 6 As shown, two diffraction peaks φ1 and φ2 are obtained, and the bisecting angle φ is calculated. a =(φ2-φ1) / 2, φ1<φ2;

[0053] 3) Turn the X-ray diffractometer platform φ axis to φ a Position, X-ray incident angle and exit angle maintain θ 11 The relative position remains unchanged, and the X-ray diffractometer measurement program is called to perform θ / θ scanning, such as Figure 7 As shown, the diffraction peak θ 1a , calculate the deflection angle θ a =θ 11 -θ 1a ;

[0054] 4) The platform φ axis of the X-ray diffractometer is turned to 90-φ a Position, x-axis turns to θ a Position, call the X-ray diffractometer measurement program to perform θ / 2θ scanning, and the new strongest diffraction peak is θ 11 , adjust the X-ray incident angle and exit angle of the diffractometer to θ 11 Position, call the X-ray diffractometer measurement program to perform φ scanning. When the diffraction line becomes a horizontal line and the intensity dispersion is less than 10%, the vertical adjustment of the temperature measuring crystal surface and the diffraction plane is completed. Otherwise, return to 2) to solve the problem that the temperature measuring crystal surface and the diffraction plane are not perpendicular.

[0055] 5. Diffraction peak measurement

[0056] Keeping the φa and θα positions from step 4, rotate the φ axis of the X-ray diffractometer platform to 0°, 60°, 120°, 180°, 240°, and 300°. At each position, call the X-ray diffractometer measurement program to perform θ / 2θ scanning to obtain multiple diffraction peaks. For the tiny temperature-measuring crystal, take the two strongest diffraction peaks. Calculate the average value of the six sets of data for each diffraction peak to obtain the Bragg diffraction angles θ1 and θ2 of the two strongest diffraction peaks.

[0057] 6. Temperature analysis

[0058] Calculate the diffraction angle difference θ c =θ1-θ2, compared with the calibration data, and θ c The closest temperature value is the analysis temperature value.

[0059] So far, the technical solution of the present application has been described in conjunction with the preferred embodiments shown in the accompanying drawings. Those skilled in the art should understand that the scope of protection of the present application is obviously not limited to these specific embodiments. Without departing from the principles of the present application, those skilled in the art can make equivalent changes or replacements to the relevant technical features, and the technical solutions after these changes or replacements will fall within the scope of protection of the present application.

Claims

1. A method for analyzing temperature data of a micro-temperature measuring crystal, characterized in that: include: Processing a cylindrical measuring block and processing a through hole in the center of the cylindrical measuring block; Process an annular gasket, the inner diameter of which is equal to the diameter of the central through hole of the cylindrical measuring block, the outer diameter of which is equal to the diameter of the cylindrical measuring block, and the thickness of which is 1 / 2 of the thickness of the temperature measuring crystal; Place the annular gasket horizontally on the glass plate, place the temperature measuring crystal in the center of the center hole of the annular gasket, fill the center hole with plasticine, align the columnar measuring block and place it on the annular gasket, and fill the through hole with packaging glue; After the encapsulation glue solidifies, remove the columnar measuring block, turn it over, and clean the plasticine on the temperature measuring crystal; The columnar measuring block is attached to the center of the X-ray diffractometer platform. The X-ray diffractometer has the functions of x-axis and y-axis deflection and z-axis rotation. The X-ray diffraction surface is located on the plane where the z-axis and y-axis are located. Adjust the X-rays to small angles of incidence and emission, call the X-ray diffractometer measurement program to perform z-scan, determine the z-axis height position when the X-rays are blocked, call the X-ray diffractometer measurement program to perform θ / 2θ scanning, and complete the z-axis height position positioning when a valid diffraction peak can be obtained; The X-ray diffractometer measurement program is called to perform θ / 2θ scanning to obtain multiple diffraction peaks, among which the strongest diffraction peak is θ 11 ; Adjust the X-ray incident and exit angles of the diffractometer to θ 11 Position, call the X-ray diffractometer measurement program to perform φ scanning, obtain two diffraction peaks φ1 and φ2, calculate the bisecting angle φ a =(φ2-φ1) / 2, φ1<φ2; Turn the X-ray diffractometer platform φ axis to φ a Position, X-ray incident angle and exit angle maintain θ 11 The relative position remains unchanged, and the X-ray diffractometer measurement program is called to perform θ / θ scanning to obtain the diffraction peak θ 1a , calculate the deflection angle θ a =θ 11 -θ 1a ; The platform φ axis of the X-ray diffractometer is turned to 90-φ a Position, x-axis turns to θ a Position, call the X-ray diffractometer measurement program to perform θ / 2θ scanning, and the new strongest diffraction peak is θ 11 , adjust the X-ray incident angle and exit angle of the diffractometer to θ 11 Position, call the X-ray diffractometer measurement program to perform φ scanning, when the diffraction line becomes a horizontal line and the intensity dispersion is less than 10%, complete the vertical adjustment of the temperature measuring crystal surface and the diffraction plane; The φ axis of the X-ray diffractometer platform was rotated to 0°, 60°, 120°, 180°, 240°, and 300°. At each position, the X-ray diffractometer measurement program was called to perform θ / 2θ scanning to obtain multiple diffraction peaks. The two strongest diffraction peaks were selected. The average value of the six sets of data for each diffraction peak was calculated to obtain the Bragg diffraction angles θ1 and θ2 of the two strongest diffraction peaks. Calculate the diffraction angle difference θ c =θ1-θ2, compared with the calibration data, and θ c The closest temperature value is the analysis temperature value.

2. The method for analyzing temperature data of a micro-temperature measuring crystal according to claim 1, wherein: The diameter of the columnar measuring block is 6 to 10 mm and the thickness is 2 mm.

3. The method for analyzing temperature data of a micro-temperature measuring crystal according to claim 1, wherein: The diameter of the through hole on the columnar measuring block is 1 to 2 mm.

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