Deposition apparatus, deposition method, and deposition system

Abstract

A deposition apparatus includes a magnetic shield. The magnetic shield reduces external noise in a chamber including a target and at least one electromagnet for copper physical vapor deposition. The shield may have a thickness ranging from about 0.1 mm to about 10 mm to provide sufficient protection against radio frequency and other electromagnetic signals. Therefore, copper atoms in the chamber experience less redirection from external noise. Furthermore, even if hardware failures occur during physical vapor deposition (e.g., electromagnet malfunction, wafer stage misalignment, and / or excessive offset caused by a flow optimizer), copper atoms are less susceptible to the effects of minor redirections from external noise. Consequently, the conductive structures of the back-end and / or mid-end processes are formed in a more consistent manner, which increases conductivity and improves the lifetime of electronic devices incorporating conductive structures from the back-end and / or mid-end processes.

Description

Technical Field

[0001] This invention relates to a semiconductor manufacturing technology, and more specifically to a deposition apparatus, deposition method, and deposition system including magnetic shielding. Background Technology

[0002] Some electronic devices, such as processors, memory devices, or other types of electronic devices, include a middle end-of-line (MEOL) region that electrically connects transistors in a front end-of-line (FEOL) region to a back end-of-line (BEOL) region. The back end-of-line or middle end-of-line region may include a dielectric layer and via plugs formed in the dielectric layer. The plugs may include one or more metals for electrical connection. One or more materials in the back end-of-line region and / or the middle end-of-line region may be deposited using physical vapor deposition (PVD). Summary of the Invention

[0003] According to certain aspects of this disclosure, a deposition apparatus is provided. The deposition apparatus includes a chamber having at least one electromagnet and at least one flow optimizer configured to guide copper ions from a copper target onto a wafer. The apparatus also includes a magnetic shield adjacent to the chamber and configured to reduce electromagnetic noise within the chamber.

[0004] According to certain aspects of this disclosure, a deposition method is provided. The deposition method includes determining a first portion of a chamber, the first portion relating to a deposition of a first copper layer, the first copper layer being thinner than a second copper layer relating to at least a second portion of the chamber. The deposition method further includes transmitting a command to locate a magnetically shielded adjacent chamber based on the first portion.

[0005] According to certain aspects of this disclosure, a deposition system is provided. The deposition system includes at least one flow optimizer and at least one electromagnet, the flow optimizer being configured to guide copper ions from a copper target to a wafer, and the electromagnet being configured to further guide copper ions to the wafer. The system also includes a magnetic shield configured to reduce electromagnetic noise outside the at least one flow optimizer and the at least one electromagnet. The system additionally includes at least one processor configured to determine a location of the magnetic shield based on a first portion of the wafer, the first portion relating to a deposition of a first copper layer, the first copper layer being thinner than a second copper layer deposited on at least a second portion of the wafer. Attached Figure Description

[0006] When combined with attachment Figure 1When reading this disclosure, it is best to understand its various aspects from the following detailed description. It is well known that, according to industry standard practice, the various features are not defined proportionally. In fact, for clarity of discussion, the dimensions of the various features may be arbitrarily increased or decreased.

[0007] Figure 1 This is an illustration of an example semiconductor processing tool described in this article.

[0008] Figures 2A to 2E For the purposes described in this article Figure 1 An illustration of an example copper deposition chamber for a semiconductor processing tool.

[0009] Figures 3 to 4 This is an illustration of an example implementation described herein.

[0010] Figure 5 For use Figure 1 An illustration of an example implementation of a semiconductor processing tool.

[0011] Figures 6A to 6E This is an illustration of an example copper deposition process performed in a copper deposition chamber as described in this article.

[0012] Figure 7 As described in this article Figure 1 An illustration of example components of one or more devices.

[0013] Figure 8 This is a flowchart of an example process for copper deposition using a magnetic shield.

[0014] Explanation of reference numerals in the attached figures:

[0015] 100: Semiconductor Processing Environment

[0016] 101a, 101b: Buffers

[0017] 103a, 103b: Transition chambers

[0018] 105a, 105b: Chamber / Clean Chamber

[0019] 107: Deposition Chamber

[0020] 107a, 107b: Chamber / Deposition Chamber

[0021] 109: Chamber / Etched Chamber

[0022] 111: Copper Deposition Chamber

[0023] 111a, 111b: Chambers / Copper Deposition Chambers

[0024] 113: Controller

[0025] 200: Example

[0026] 201: Power Supply

[0027] 203: Magnetic Source

[0028] 205: Target

[0029] 207: Electromagnet

[0030] 207a: Upper electromagnet

[0031] 207b: Lower electromagnet

[0032] 207c: Intermediate electromagnet

[0033] 209: Wafer

[0034] 210: Example

[0035] 211: Wafer Stage

[0036] 213: Power supply

[0037] 215: AC power supply

[0038] 216: Magnetic shielding

[0039] 217: Collimator

[0040] 219: Power Supply

[0041] 220: Example

[0042] 223: Lamp components

[0043] 230: Example

[0044] 240: Example

[0045] 300: Example

[0046] 303a, 303b: Electromagnets

[0047] 400: Example

[0048] 401: Base

[0049] 403: Target

[0050] 405: Traffic Optimizer

[0051] 407a: Upper electromagnet

[0052] 407b: Lower electromagnet

[0053] 409: Wafer

[0054] 411: Wafer Stage

[0055] 413: Transmission mechanism

[0056] 500: Semiconductor Processing Environment

[0057] 600: Example Implementation

[0058] 602: Etching Stop Layer

[0059] 604: Dielectric layer

[0060] 606: Etching Stop Layer

[0061] 608: Dielectric layer

[0062] 610: Etching Stop Layer

[0063] 612: Dielectric layer

[0064] 614: Conductive Structure

[0065] 616: Recessed area

[0066] 618: Barrier Layer

[0067] 620: Padding layer

[0068] 622: Conductive structure

[0069] 700: Device

[0070] 710: Bus

[0071] 720: Processor

[0072] 730: Memory

[0073] 740: Input component

[0074] 750: Output Component

[0075] 760: Communication Components

[0076] 800: Process

[0077] 810: Square

[0078] 820: Square Detailed Implementation

[0079] The following disclosure provides numerous different embodiments or examples for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify this disclosure. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, the formation of a first feature on a second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where additional features may be formed in the first and second features, so that the first and second features may not be in direct contact. Furthermore, reference numerals and / or letters may be repeated in various examples. Such repetition is for simplicity and clarity and does not in itself limit the relationship between the various embodiments and / or configurations discussed.

[0080] In addition, spatial relative terms, such as “below,” “under,” “lower,” “above,” “higher,” etc., may be used herein to readily describe the relationship between one element or feature and another in the accompanying drawings. Besides the orientations shown in the figures, these spatial relative terms are intended to cover different orientations of the apparatus in use or operation. The apparatus may be turned to different orientations (rotated 90 degrees or other orientations), and the spatial relative descriptions used herein will be interpreted accordingly.

[0081] Copper (Cu) is commonly used in back-to-back (BEOL) metallization layers and vias (also known as M1, M2, or M3 interconnects or metallization layers) or in mid-to-mid-back (MEOL) contact plugs (also known as M0 interconnects or metallization layers) because copper has lower contact resistance and sheet resistance compared to other conductive materials (such as aluminum (Al)). Lower resistivity provides a lower resistance / capacitance (RC) time constant and faster signal propagation in electronic devices.

[0082] Copper can be deposited using physical vapor deposition (PVD). An electromagnet guides vaporized copper atoms into recesses on a wafer. However, copper atoms are susceptible to reorientation due to external noise, such as radio frequency (RF) and electromagnetic (EM) radiation. This reorientation leads to less consistent deposition. Furthermore, copper atoms are more prone to small re-directions from external noise when hardware failures occur during PVD (e.g., electromagnet malfunction, wafer leveling, and / or excessive offset caused by the flow optimizer). As a result, gaps can form in back-end and / or mid-end process conductive structures, reducing the conductivity and lifespan of electronic devices that include these conductive structures.

[0083] Some embodiments described herein provide techniques and apparatus for magnetic shielding to reduce external noise in a chamber including a target and at least one electromagnet for copper physical vapor deposition. The shielding may have a thickness ranging from approximately 0.1 mm to approximately 10 mm to provide sufficient protection against radio frequency and other electromagnetic signals. As described herein, the shielding may cover the entire chamber or a portion of the chamber (e.g., a portion adjacent to at least one electromagnet). Therefore, magnetic shielding reduces noise, causing copper atoms to experience less redirection from external noise. Furthermore, even if hardware failures occur during physical vapor deposition (e.g., electromagnet failure, wafer stage misalignment, and / or excessive offset caused by the flow optimizer), copper atoms are less susceptible to small redirections from external noise. As a result, back-end and / or mid-end process conductive structures are formed in a more consistent manner, which increases conductivity and improves the lifetime of an electronic device including back-end and / or mid-end process conductive structures.

[0084] Figure 1 This illustration is an example of a semiconductor processing environment 100 described herein. Environment 100 may be configured for a semiconductor foundry or a semiconductor manufacturing facility, among other examples.

[0085] like Figure 1 As shown, environment 100 includes one or more buffers, such as buffer 101a and buffer 101b. Buffers 101a and 101b may each include a sealed chamber for receiving a wafer between processes performed by environment 100. Buffers 101a and 101b may each maintain a vacuum environment.

[0086] Although described as using two buffers, an alternative implementation includes a single buffer to save space, power, and hardware. Other alternative implementations include additional buffers (e.g., three buffers, four buffers, etc.) to further reduce the chance of wafer contamination between processes.

[0087] To further prevent wafer contamination, the environment 100 may additionally include one or more transition chambers 103a and 103b. Similar to buffers 101a and 101b, each transition chamber 103a and 103b may include a sealed chamber for receiving the wafer between processes performed by the environment 100. Therefore, each transition chamber 103a and 103b may maintain a vacuum environment.

[0088] Although described as using multiple transition chambers, an alternative implementation includes a single transition chamber to save space, power, and hardware. Other alternative implementations include additional transition chambers (e.g., three transition chambers, four transition chambers, etc.) to further reduce the chance of wafer contamination between processes.

[0089] like Figure 1 The diagram further shows that environment 100 includes one or more cleaning chambers, such as chambers 105a and 105b. Chambers 105a and 105b may each include a sealed chamber for receiving and processing wafers. Accordingly, chambers 105a and 105b may each maintain a vacuum environment. Chambers 105a and 105b may perform a cleaning process on the wafer. For example, a gas (e.g., hydrogen, argon, and / or helium) may be used to clean the wafer. Additionally, or alternatively, a plasma (e.g., hydrogen plasma, argon plasma, and / or helium plasma) may be used to clean the wafer. Accordingly, in one example, chamber 105a may clean the wafer when environment 100 initially receives the wafer, and chamber 105b may clean the wafer between deposition processes.

[0090] Environment 100 may also include one or more deposition chambers, such as chambers 107a and 107b, for depositing target material onto the exposed dielectric surface of the wafer. For example, precursor material may be received from an ampoule storage system and injected into the chamber. In some embodiments, a precursor and a reactive gas may be received simultaneously, allowing the target material to be grown using chemical vapor deposition (CVD). Alternatively, a precursor may be received followed by a purging process (e.g., using hydrogen, argon, and / or helium) before receiving the reactive gas, allowing the target material to be grown using atomic layer deposition (ALD). The target material may include a barrier material (e.g., a nitride), a liner material (e.g., ruthenium, cobalt, and / or another metal), and / or another material used in conjunction with a mid-process and / or back-end process conductive structure. In one example, chamber 107a may deposit a barrier material in a recess on the wafer, and chamber 107b may deposit a padding material in the recess. For example, the barrier material may prevent the migration of copper atoms and increase the lifetime of electronic devices including the wafer, and the padding material may improve copper flow into the recess, as described below.

[0091] Environment 100 may also include one or more etching chambers, such as chamber 109, for etching on the wafer. For example, a plasma (e.g., hydrogen plasma, argon plasma, and / or helium plasma) may be used to etch material from the wafer. Alternatively, a polishing pad and polishing slurry may be used to etch material using chemical-mechanical polishing (CMP). Etching can expose the surface of the wafer, allowing target material (e.g., barrier material and / or pad material) and / or conductive structures (e.g., mid-process and / or back-process conductive structures) to be formed on the exposed surface. Alternatively, etching can remove photoresist material, dummy gates, and / or other materials no longer needed on the wafer. In one example, chamber 109 may etch excess copper flowing onto the wafer, as described below.

[0092] like Figure 1 As further shown, environment 100 includes one or more copper deposition chambers, such as chambers 111a and 111b. Copper deposition chambers 111a and 111b deposit copper in recesses on the wafer. For example, copper deposition chambers 111a and 111b can each evaporate copper ions and use at least one electromagnet to guide the copper ions to the wafer (e.g., in conjunction with...). Figures 2A to 2E (as described above). Therefore, copper deposition chambers 111a and 111b can be used to deposit copper using physical vapor deposition. Copper can be used to form mid-process and / or back-process structures on the wafer. In some aspects, two processes can be used to deposit copper, such that both copper deposition chambers 111a and 111b are used to form mid-process and / or back-process structures.

[0093] In addition, such as Figure 1As shown, environment 100 may include a controller 113. While described as a single processor to save power and space, controller 113 may optionally include multiple processors to increase processing power and reduce latency. Controller 113 may receive signals from sensors associated with buffers 101a and 101b, transition chambers 103a and 103b, cleaning chambers 105a and 105b, deposition chambers 107a and 107b, etching chamber 109, and / or copper deposition chambers 111a and 111b. For example, controller 113 may receive signals associated with temperature, pressure, and / or other environmental factors of the buffers, transition chambers, cleaning chambers, deposition chambers, etching chambers, and / or copper deposition chambers. Controller 113 may transmit instructions to hardware associated with the buffers, transition chambers, cleaning chambers, deposition chambers, etching chambers, and / or copper deposition chambers. For example, controller 113 may transmit instructions to perform cleaning, deposition, and / or etching on a wafer. Although described as external, controller 113 may additionally or alternatively include an integrated circuit embedded in one or more other components of environment 100 to save space.

[0094] During operation, environment 100 includes noise from the chambers within environment 100. For example, the chambers may include electric motors and / or other components that generate radio frequency noise. Additionally, or alternatively, the chambers may include magnetomotors, electromagnets, and / or other components that generate electromagnetic noise. Therefore, copper ions guided to the wafer in copper deposition chambers 111a and 111b may be deflected due to ambient noise in environment 100. Accordingly, back-end and / or mid-end process conductive structures may be formed with air gaps instead of being deposited at a uniform height on the wafer. These air gaps reduce the conductivity and lifetime of an electronic device including back-end and / or mid-end process conductive structures.

[0095] In addition, one or more hardware components (e.g., combined with) copper deposition chambers 111a and 111b Figures 2A to 2E The aforementioned may fail. However, any offset caused by the failure may be further aggravated by noise in the environment 100. As a result, wafers that might still be functional despite failures in the copper deposition chambers 111a and 111b may become nonfunctional and thus be wasted.

[0096] Accordingly, a magnetic shield (e.g., combined with) can be installed in the copper deposition chambers 111a and 111b. Figures 2A to 2E , Figure 3 , Figure 4 ,as well as Figure 5(As stated above) to reduce noise from the environment 100. Therefore, the back-end and / or mid-end process conductive structures are formed in a more consistent manner, which increases conductivity and improves the lifespan of electronic devices including back-end and / or mid-end process conductive structures. Furthermore, failures in the copper deposition chambers 111a and 111b can result in less wafer waste.

[0097] As mentioned above, providing Figure 1 As an example. Other examples may be related to... Figure 1 The description differs. For example, for ease of explanation, certain devices and / or components of environment 100 are not shown. Figure 1 In the context of environment 100, additional devices and / or components are combined. Figures 2A to 2E , Figure 3 , Figure 4 ,as well as Figure 5 describe.

[0098] Figures 2A to 2E It is a semiconductor processing environment (e.g., Figure 1 Examples 200 to 240 are illustrated in an environment 100) of a copper deposition chamber. For example, Figures 2A to 2E The copper deposition chambers shown can be copper deposition chambers 111a and 111b in environment 100.

[0099] like Figure 2A As shown, Example 200 includes a power source 201 and a magnetic source 203 for evaporating copper ions from a target 205. Accordingly, the electromagnetic force generated by the power source 201 and the magnetic source 203 causes the evaporation of copper ions from the target 205. The target 205 may comprise a disk or other solid form of copper with a purity of at least 99 percent. By selecting a purity of at least 99 percent, impurities are not released. Impurities can contaminate the chamber and deposit on the wafer 209, leading to reduced conductivity and even rendering electronic devices formed on the wafer 209 inoperable. In some embodiments, and as in combination Figure 4 As described, target 205 may be attached to a substrate. The substrate may be an element that is stable under the conditions generated by power source 201 and magnetic source 203, such as titanium (Ti). In some embodiments, the substrate may be additionally rotated to facilitate the release of copper ions from target 205.

[0100] An electromagnet 207 can be used to guide copper ions from the target 205 to the wafer 209. The electromagnet 207 surrounds the cavity, such that the cross-section of the electromagnet 207 is as shown. Figure 2A As shown. Figure 2AThe diagram further shows that wafer 209 can be placed on a wafer stage 211. A power supply 213 can power one or more motors (e.g., pneumatic motors, rotary motors, and / or other types of motors) configured to maintain the wafer stage 211 level during copper deposition on wafer 209. Additionally, power supply 213 can power a heating element in the wafer stage 211 to heat wafer 209, causing copper ions to flow into recesses on wafer 209. For example, copper can accumulate in the recesses to form conductive structures for mid-process and / or back-process. In some embodiments, an AC power supply 215 can additionally repel copper ions from the walls of the chamber. Thus, Example 200 efficiently uses electricity to deposit copper on wafer 209.

[0101] like Figure 2A Further, Example 200 may include a magnetic shield 216 to isolate the chamber from radio frequency and electromagnetic noise. The size and location of the magnetic shield 216 may be combined as follows: Figure 3 as well as Figure 4 The described configuration improves the uniformity of copper deposition on the wafer within the chamber by isolating the chamber from radio frequency and electromagnetic noise. Therefore, mid-process and / or back-process structures can be configured with fewer (or no) air gaps.

[0102] like Figure 2B As shown, Example 210 is similar to Example 200. However, Example 210 includes a collimator 217 configured to guide copper ions from the target 205 to the wafer 209. The collimator 217 may include a plurality of slots configured to guide copper ions to the wafer 209 in multiple directions. Accordingly, the collimator 217 can be used to guide copper ions away from the walls of the chamber instead of the AC power supply 215. Therefore, Example 210 increases the accuracy of copper deposition on the wafer 209.

[0103] like Figure 2B Further, it is shown that Example 210 may include a magnetic shield 216 to isolate the chamber from radio frequency and electromagnetic noise. The size and location of the magnetic shield 216 may be combined as follows: Figure 3 as well as Figure 4 The described configuration improves the uniformity of copper deposition on the wafer within the chamber by isolating the chamber from radio frequency and electromagnetic noise. Therefore, mid-process and / or back-process structures can be configured with fewer (or no) air gaps.

[0104] like Figure 2CAs shown, Example 220 is similar to Example 210. However, Example 220 includes a power supply 219 for collimator 217. Therefore, collimator 217 can be an active collimator (e.g., comprising multiple slots with a non-zero voltage difference to repel copper ions to the center of the slots) rather than a passive collimator. Furthermore, Example 220 includes an upper electromagnet 207a and a lower electromagnet 207b. Therefore, Example 220 increases the accuracy of copper deposition on wafer 209.

[0105] like Figure 2C Further, it is shown that Example 220 may include a magnetic shield 216 to isolate the chamber from radio frequency and electromagnetic noise. The size and location of the magnetic shield 216 may be combined as follows: Figure 3 as well as Figure 4 The described configuration improves the uniformity of copper deposition on the wafer within the chamber by isolating the chamber from radio frequency and electromagnetic noise. Therefore, mid-process and / or back-process structures can be configured with fewer (or no) air gaps.

[0106] like Figure 2D As shown, Example 230 is similar to Example 220. However, Example 230 includes an intermediate electromagnet 207c, an upper electromagnet 207a, and a lower electromagnet 207b. Therefore, Example 230 increases the accuracy of copper deposition on wafer 209.

[0107] like Figure 2D Further, Example 230 may include a magnetic shield 216 to isolate the chamber from radio frequency and electromagnetic noise. The size and location of the magnetic shield 216 may be combined as follows: Figure 3 as well as Figure 4 The described configuration improves the uniformity of copper deposition on the wafer within the chamber by isolating the chamber from radio frequency and electromagnetic noise. Therefore, mid-process and / or back-process structures can be configured with fewer (or no) air gaps.

[0108] like Figure 2E As shown, Example 240 is similar to Example 220. However, Example 240 includes a flow optimizer 221, whose slots are smaller than those in the collimator 217. Therefore, Example 240 improves the accuracy of copper deposition on wafer 209. Furthermore, Example 240 uses the flow optimizer 221 instead of an intermediate electromagnet to improve power efficiency. Additionally, a lamp component 223 is used to heat wafer 209 instead of a heating element included in the wafer stage 211. Therefore, wafer 209 can be heated more accurately and has higher power efficiency.

[0109] like Figure 2E Further, Example 240 may include a magnetic shield 216 to isolate the chamber from radio frequency and electromagnetic noise. The size and location of the magnetic shield 216 may be combined as follows: Figure 3 as well as Figure 4 The described configuration improves the uniformity of copper deposition on the wafer within the chamber by isolating the chamber from radio frequency and electromagnetic noise. Therefore, mid-process and / or back-process structures can be configured with fewer (or no) air gaps.

[0110] Although described using power source 201 and magnetic source 203, examples 200, 210, 220, 230, and 240 optionally use sputtering, pulsed laser, and / or another similar technique to evaporate copper ions from target 205.

[0111] As mentioned above, providing Figures 2A to 2E As an example. Other examples may differ from those regarding... Figures 2A to 2E The example described. In Figures 2A to 2E The number and arrangement of devices shown are provided as an example only. In reality, there may be more. Figures 2A to 2E The diagram shows more devices, fewer devices, different devices, or devices arranged differently. Furthermore, Figures 2A to 2E The two or more devices shown can be implemented in a single device, or Figures 2A to 2E The single device shown can be implemented as multiple, distributed devices. Additionally, or alternatively, Figures 2A to 2E The set of devices shown (e.g., one or more devices) can be described as being made by Figures 2A to 2E The other set of devices shown performs one or more functions.

[0112] Figure 3 This illustration shows an example 300 of a magnetic shield, which is integrated with a deposition chamber in a semiconductor processing environment (e.g., Figure 1 Used in environment 100). Figure 3 As shown, Example 300 includes a magnetic shield 216 (e.g., magnetic shield 216) adjacent to a copper deposition chamber 111. Furthermore, in Example 300, the magnetic shield 216 is located between the copper deposition chamber 111 and a nearby deposition chamber 107. These chambers are combined... Figure 1 as well as Figures 2A to 2E A further, more detailed description.

[0113] Such as combination Figures 2A to 2EThe copper deposition chamber 111 may include one or more electromagnets 303a (e.g., electromagnets 207, 207a, 207b). Similarly, a nearby deposition chamber 107 may include one or more electromagnets 303b. Therefore, a nearby deposition chamber 107 may generate electromagnetic noise. Accordingly, a magnetic shield 216 can redistribute the magnetic flux throughout the material and isolate the copper deposition chamber 111 from electromagnetic noise. Additionally, or alternatively, a nearby deposition chamber 107 may include a motor and / or another electronic component that generates radio frequency (RF) noise. The magnetic shield 216 can also absorb RF signals and thus isolate the copper deposition chamber 111 from RF noise. By isolating the copper deposition chamber 111 from electromagnetic and RF noise, the uniformity of copper deposition on the wafer within the copper deposition chamber 111 is improved. Therefore, mid-process and / or back-process structures can be configured with fewer (or no) air gaps.

[0114] Additionally, the flow optimizer (or other collimator) and electromagnet included in the copper deposition chamber 111 can more accurately guide more copper ions to the recesses on the wafer and fewer copper ions to the dielectric surface on the wafer. Therefore, a first copper layer can be deposited on a first portion of the wafer, which is thinner than at least a second copper layer deposited on at least a second portion of the wafer. This allows for the formation of mid-process and / or back-process structures, but with a relatively consistent final copper height on the wafer. For example, after deposition, a difference in the copper surface height on the wafer can be reduced to a range of approximately 0.1% to approximately 2.5%. A difference not exceeding 2.5% allows for copper removal via chemical mechanical polishing, while reducing recesses in mid-process and / or back-process structures and reducing damage to the dielectric layer surrounding the mid-process and / or back-process structures. Without magnetic shielding, a difference in the copper surface height on the wafer after deposition can be at least 5.0%.

[0115] In some embodiments, the magnetic shield 216 is formed of at least one ferromagnetic material. For example, the magnetic shield 216 may be formed of a transition metal, such as nickel, iron, copper, chromium, molybdenum, vanadium, or manganese. In some embodiments, the magnetic shield 216 may be an alloy of at least two transition metals.

[0116] The magnetic shield 216 may have a thickness ranging from approximately 0.1 mm to approximately 10 mm. By selecting a thickness of at least 0.1 mm, the magnetic shield 216 provides isolation from electromagnetic and radio frequency noise. By selecting a thickness not exceeding 10 mm, no raw materials are consumed in manufacturing the magnetic shield 216, and the thickness of the magnetic shield 216 hardly increases the efficiency of the magnetic shield 216 in isolating electromagnetic and radio frequency noise.

[0117] When the deposition chamber 107 is associated with a power consumption of approximately 1000 watts to approximately 2000 watts, the lower limit of the thickness range of the magnetic shield 216 can be selected to be approximately 0.1 mm. Similarly, when the distance between the deposition chamber 107 and the copper deposition chamber 111 is in the range of approximately 80 cm to approximately 120 cm, the lower limit of the thickness range of the magnetic shield 216 can be selected to be approximately 0.1 mm. On the other hand, when the deposition chamber 107 is associated with a power consumption greater than 2000 watts and / or when the distance between the deposition chamber 107 and the copper deposition chamber 111 is less than 80 cm, the lower limit of the thickness range of the magnetic shield 216 can be selected to be 0.2 mm. For example, a thickness in the range of approximately 0.1 mm to approximately 0.2 mm may be insufficient to isolate electromagnetic and radio frequency noise generated under the above conditions.

[0118] In some embodiments, the magnetic shield 216 may have a length ranging from approximately 30 cm to approximately 150 cm. By selecting a length of at least 30 cm, the magnetic shield 216 provides isolation from electromagnetic and radio frequency noise. By selecting a length not exceeding 150 cm, no raw materials are consumed in manufacturing the magnetic shield 216, and the length of the magnetic shield 216 hardly increases the efficiency of the magnetic shield 216 in isolating electromagnetic and radio frequency noise. In some embodiments, an upper limit of the length range of the magnetic shield 216 may correspond to a length of the copper deposition chamber 111. For example, the magnetic shield 216 may be formed to be no larger than a perimeter (or other circumference) of the copper deposition chamber 111. In some embodiments, to allow the magnetic shield 216 to be moved to different portions adjacent to the copper deposition chamber 111 (e.g., as in combination), Figure 4 As described, the magnetic shield 216 may be formed to be no more than half the perimeter (or other circumference) of the copper deposition chamber 111.

[0119] In some embodiments, the magnetic shield 216 may have a width ranging from approximately 10 cm to approximately 50 cm. By selecting a width of at least 10 cm, the magnetic shield 216 provides isolation against electromagnetic and radio frequency noise. By selecting a width not exceeding 50 cm, no raw materials are consumed in manufacturing the magnetic shield 216, and the width of the magnetic shield 216 hardly increases the efficiency of the magnetic shield 216 in isolating electromagnetic and radio frequency noise. In some embodiments, an upper limit of the width range of the magnetic shield 216 may correspond to a height of the copper deposition chamber 111. For example, the magnetic shield 216 may be formed to be no greater than a height of the copper deposition chamber 111. In some embodiments, to allow the magnetic shield 216 to be moved adjacent to different portions of the copper deposition chamber 111 (e.g., as in combination), Figure 4 As described, the magnetic shield 216 can be formed to be no more than half the height of the copper deposition chamber 111.

[0120] In some implementations, such as Figure 3 As shown, the magnetic shield 216 may surround a portion of the copper deposition chamber 111. Therefore, the magnetic shield 216 is fabricated using less material, and the magnetic shield 216 can be used during different deposition processes (e.g., as in combination). Figure 4 (As described) can be moved to a different location adjacent to the copper deposition chamber 111. Alternatively, the magnetic shield 216 can be designed to surround the entire copper deposition chamber 111. Thus, the magnetic shield 216 isolates the copper deposition chamber 111 from the maximum amount of electromagnetic and radio frequency noise from any direction.

[0121] As mentioned above, Figure 3 This is provided as an example. Other examples may be related to... Figure 3 The content described is different.

[0122] Figure 4 It is a semiconductor processing environment (e.g., Figure 1 An illustration of an example 400 of a copper deposition chamber within an environment 100. For example, Figure 4 The copper deposition chamber shown may be included in environment 100 (e.g., as copper deposition chamber 111a and / or copper deposition chamber 111b).

[0123] Example 400 is similar to Figure 2E Example 240. (e.g.) Figure 4 As shown, Example 400 includes a target 403 on a substrate 401. Copper ions evaporate from the target 403 and are guided from the target 403 to a wafer 409 on a wafer stage 411 using a flow optimizer 405, an upper electromagnet 407a, and a lower electromagnet 407b. Furthermore, in some embodiments, the wafer 409 is heated using a lamp component and / or a heating element included in the wafer stage 411.

[0124] like Figure 4 As shown, the magnetic shield 216 can be positioned adjacent to a portion of the copper deposition chamber. For example, the magnetic shield 216 can be positioned adjacent to the copper deposition chamber using a transport mechanism (e.g., as described below) and / or attachable (e.g., using an adhesive and / or fastening components, such as screws or nails) to the copper deposition chamber. In some embodiments, the magnetic shield 216 can be positioned adjacent to a first portion of the copper deposition chamber, the first portion being associated with the deposition of a first copper layer, the first portion being thinner than a second copper layer associated with at least a second portion of the copper deposition chamber. For example, the first portion of the copper deposition chamber may include a first portion of wafer 409, the mid-process and / or back-process structure deposited on the first portion being shorter than the mid-process and / or back-process structure deposited on the second portion of wafer 409 located in the second portion of the copper deposition chamber.

[0125] Furthermore, even if hardware failures occur during physical vapor deposition (e.g., malfunction of electromagnets 407a and / or 407b, non-level wafer stage 411, and / or excessive offset caused by flow optimizer 405, etc.), copper atoms are less susceptible to minor redirections from external noise. Therefore, back-end and / or mid-end process conductive structures are formed on wafer 409 in a more consistent manner, which increases conductivity and improves the lifespan of electronic devices incorporating back-end and / or mid-end process conductive structures.

[0126] In some implementations, controller 113 (e.g., as in combination with...) Figure 1 The controller 113 can determine a first portion (e.g., based on a first portion of wafer 409) and a second portion (e.g., based on a second portion of wafer 409) of the copper deposition chamber. For example, the controller 113 can control the flow optimizer 405, electromagnet 407a, and / or electromagnet 407b, such that the controller 113 can access a file (or other data structure) indicating a schematic diagram related to wafer 409. Alternatively, the controller 113 can receive the file from a different device that controls the flow optimizer 405, electromagnet 407a, and / or electromagnet 407b. In some embodiments, the schematic diagram can indicate the copper deposition thickness of different portions of wafer 409. As an alternative, the schematic diagram can indicate the location of desired mid-process and / or back-process structures on wafer 409, such that the controller 113 can estimate the copper deposition thickness of different portions of wafer 409. Based on the thickness of the copper deposition for different portions of wafer 409, controller 113 can determine that magnetic shield 216 should be positioned in the vicinity of the first portion of wafer 409 (and therefore, the first portion of the copper deposition chamber).

[0127] Additionally, or alternatively, controller 113 may simulate a physical vapor deposition process for depositing copper based on one or more parameters related to wafer 409. For example, controller 113 may receive data indicating the length of time, settings related to the evaporation rate of target 403, settings related to flow optimizer 405, and / or settings related to electromagnets 407a and / or 407b, such that controller 113 simulates which portions of wafer 409 can receive more copper than other portions. For example, controller 113 may execute a model of copper ion movement from target 403 to wafer 409 based on the aforementioned inputs. Based on the simulated copper deposition on different portions of wafer 409, controller 113 may determine that magnetic shield 216 should be positioned on a first portion of wafer 409 (and therefore a first portion of the copper deposition chamber) nearby.

[0128] In some implementations, controller 113 is configured to use a machine learning model, trained based on historical data, to control the positioning of magnetic shield 216. For example, the machine learning model may be related to the distribution of historical deposition data on the wafer (e.g., a topographic map of copper thickness) and historical inputs related to the copper deposition process (e.g., as described above). Other parameters used by the model may include brand / model information related to flow optimizer 405 and / or electromagnet 407, the shape of the slot of flow optimizer 405, the position of electromagnet 407, the power applied to electromagnet 407, the age of flow optimizer 405, electromagnet 407, and / or other components of the copper deposition chamber, the amount of time since the most recent cleaning of the copper deposition chamber, the type of structure formed on the wafer, and / or deposition parameters (e.g., temperature of target 403, wafer temperature, pressure, and / or other parameters), or others. For combinations of historical inputs and / or parameters, the machine learning model may have been trained to estimate portions of wafer 409 related to thinner copper deposition. For example, a machine learning model may be trained until an associated loss function satisfies a training threshold. Accordingly, the machine learning model may accept input data indicating a copper deposition process and output data estimating the location of the magnetic shield 216 (e.g., adjacent to the first portion of the wafer 409 estimated to be associated with a thinner copper deposition).

[0129] In some embodiments, controller 113 may output data indicating a position of magnetic shield 216 based on a first portion and a second portion of the copper deposition chamber. For example, controller 113 may output decimal coordinates representing a center of magnetic shield 216 (e.g., relative to an origin associated with the copper deposition chamber). Additionally, or alternatively, controller 113 may transmit a command to a transmission mechanism 413 to move magnetic shield 216 to a position determined by controller 113. Figure 4 As shown, the transfer mechanism 413 may include a robotic arm that moves the magnetic shield 216. Other examples of the transfer mechanism 413 may include a gripping device that moves along a track (e.g., on a floor of an environment including a copper deposition chamber or on a ceiling of an environment including a copper deposition chamber) or a lifting device that moves along a track (e.g., on a ceiling of an environment including a copper deposition chamber).

[0130] After the transfer mechanism 413 moves the magnetic shield 216 to the position determined by the controller 113, the magnetic shield 216 can be attached to the copper deposition chamber (e.g., using an adhesive and / or fastening components such as screws or nails). Alternatively, when the copper deposition chamber is in use, the transfer mechanism 413 can hold the magnetic shield 216 in the position determined by the controller 113.

[0131] In some embodiments, the controller 113 may additionally or alternatively output data indicating which of a plurality of magnetic shields 216 to use based on the first and second portions of the copper deposition chamber. For example, when the first portion of the copper deposition chamber is large, the controller 113 may select to use a longer and / or wider magnetic shield 216. Additionally, or alternatively, when the first portion of the copper deposition chamber is large, the controller 113 may select to use a thicker magnetic shield 216. Additionally, or alternatively, the controller 113 may output data indicating which of a plurality of magnetic shields 216 to use based on the power consumption of an adjacent deposition chamber and / or a distance between the copper deposition chamber and the adjacent deposition chamber. For example, when the power consumption is high and / or the distance is small, the controller 113 may select to use a thicker magnetic shield 216. In some embodiments, the controller 113 may transmit a command to a transmission mechanism 413 to retrieve a selected magnetic shield 216 from a repository of a plurality of magnetic shields. The controller 113 may also transmit a command to move the selected magnetic shield 216 to a position determined by the controller 113.

[0132] In some embodiments, the controller 113 may additionally control the flow optimizer 405, electromagnet 407a, and / or electromagnet 407b. Therefore, the controller 113 may additionally send instructions to the flow optimizer 405 and / or to the electromagnets 407a and / or 407b to direct more copper ions to a second portion of wafer 409 compared to a first portion of wafer 409.

[0133] As mentioned above, Figure 4 This is provided as an example. Other examples may be related to... Figure 4 The descriptions are different.

[0134] Figure 5 This is an illustration of an example of a semiconductor processing environment 500 described herein. The semiconductor processing environment 500 can be configured for use in a semiconductor foundry or a semiconductor manufacturing facility, or otherwise.

[0135] Environment 500 is similar to environment 100, but includes a magnetic shield 216 between copper deposition chamber 111a and deposition chamber 107a. Therefore, the magnetic shield 216 isolates copper deposition chamber 111a from electromagnetic and radio frequency noise, which improves the uniformity of copper deposition on the wafer within copper deposition chamber 111a. Although shown relative to copper deposition chamber 111a, the magnetic shield may additionally or alternatively be installed adjacent to copper deposition chamber 111b (e.g., between copper deposition chamber 111b and deposition chamber 107b).

[0136] In some implementations, such as Figure 5As shown, the magnetic shield 216 is positioned adjacent to a portion of the copper deposition chamber 111a. For example, the positioning between the copper deposition chamber 111a and the deposition chamber 107a can be combined as described above. Figure 4 choose.

[0137] As mentioned above, Figure 5 This is provided as an example. Other examples may be related to... Figure 5 The descriptions are different.

[0138] Figures 6A to 6E This is an illustration of an exemplary embodiment 600 described herein. Exemplary embodiment 600 may be an example process for copper deposition in a copper deposition chamber as described herein. The copper deposition chamber allows the conductive structure 622 to be formed in a more consistent manner, which increases conductivity and improves the lifespan of an electronic device including the conductive structure 622.

[0139] like Figure 6A As shown, an example process for forming the conductive structure 614 can be performed in conjunction with a mid-process or a back-process. In some embodiments, the mid-process or back-process includes a conductive structure 614 (e.g., an interconnect or contact plug in the mid-process; a via layer in the back-process, such as a via layer V0; and / or a metallization layer in the back-process, such as a metallization layer M0, a metallization layer M1, or a metallization layer Mx, where x represents a positive integer). Furthermore, the mid-process and / or back-process includes one or more stacked layers on a substrate, including an etch stop layer (ESL) 602, a dielectric layer 604, an etch stop layer 606, a dielectric layer 608, an etch stop layer 610, and a dielectric layer 612, among others. Dielectric layers 604, 608, and 612 are included to electrically isolate various structures in the mid-process and / or back-process. Dielectric layers 604, 608, and 612 may each comprise a silicon nitride (SiNx), an oxide (e.g., silicon oxide (SiOx), and / or another oxide material), and / or another type of dielectric material. Etch stop layers 602, 606, and 610 may each comprise a layer of material configured to allow portions of intermediate and / or back-end processes to be selectively etched or protected from etching to form one or more structures included in the intermediate and / or back-end processes. Although shown as a single layer, in some embodiments, etch stop layers 602, 606, and / or 610 comprise multiple etch stop layers stacked together as an etch stop.

[0140] like Figure 6AAs further shown, dielectric layers 608 and 612 can be etched to form an opening (resulting in a recess 616). The etchable recess 616 exposes at least partially the conductive structure 614. For example, a deposition tool can form a photoresist layer on dielectric layer 612 (or on an etch stop layer formed on dielectric layer 612), an exposure tool can expose the photoresist layer to a radiation source to pattern the photoresist layer, a developing tool can develop and remove a portion of the photoresist layer to expose the pattern, and an etching tool can etch a portion of dielectric layers 612 and 608 to form the recess 616. In some embodiments, a photoresist removal tool removes the remaining portion of the photoresist layer after the etching tool has etched the recess 616 (e.g., using a chemical stripper, a plasma photoresist remover, and / or another technique).

[0141] like Figure 6B As shown, a barrier layer 618 may be formed on the sidewalls of the recess 616 (and in some embodiments, on at least a portion of the dielectric layer 612). The barrier layer 618 may be deposited using a chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), or another type of deposition technique. A planarization tool may planarize at least a portion of the barrier layer 618 after it has been deposited. Although shown as covering a bottom portion of the recess 616 (and thus an exposed surface of the conductive structure 614), in some embodiments, the deposition tool may deposit a barrier material on the exposed surface of the conductive structure 614 to prevent or at least slow down the deposition of the barrier layer 618 on the bottom portion of the recess 616.

[0142] like Figure 6C As shown, a pad layer 620 may be formed on the sidewall of the recess 616 (and in some embodiments, on at least a portion of the dielectric layer 612). A deposition tool may deposit the pad layer 620 using a chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), or another type of deposition technique. A planarization tool may planarize at least a portion of the pad layer 620 after it has been deposited. In some embodiments, an etching tool may remove barrier material from the exposed surface of the conductive structure 614, causing the pad layer 620 to be deposited on the bottom portion of the recess 616.

[0143] like Figure 6D As shown, a conductive structure 622 can be formed in the recess 616. The conductive structure 622 can be formed of copper. Accordingly, a deposition tool can be used to deposit copper using a copper deposition chamber as described herein. A planarization tool can planarize the conductive structure 622 after deposition.

[0144] like Figure 6EAs shown, excess material on dielectric layer 612 can be removed by chemical mechanical polishing (CMP). For example, etching tools and / or planarization tools can be used for chemical mechanical polishing to remove excess copper, barrier material, and / or padding material.

[0145] As mentioned above, Figures 6A to 6E This is provided as an example. Other examples may be related to... Figures 6A to 6E The descriptions are different.

[0146] Figure 7 This is an illustration of an example component of a device 700, which may correspond to a controller (e.g., controller 113) and / or a transmission mechanism (e.g., transmission mechanism 413). In some embodiments, the controller and / or transmission mechanism includes one or more devices 700 and / or one or more components of device 700. Figure 7 As shown, the device 700 may include a bus 710, a processor 720, a memory 730, an input unit 740, an output unit 750, and a communication unit 760.

[0147] Bus 710 includes one or more components that enable wired and / or wireless communication between components of device 700. Bus 710 can... Figure 7 Two or more components are coupled together, for example via operative coupling, communicative coupling, electronic coupling, and / or electrical coupling. Processor 720 includes a central processing unit, a graphics processing unit, a microprocessor, a controller, a microcontroller, a digital signal processor, a field-programmable gate array, an application-specific integrated circuit (ASIC), and / or other types of processing units. Processor 720 is implemented in hardware, firmware, or a combination of hardware and software. In some embodiments, processor 720 includes one or more processors capable of being programmed to perform one or more operations or processes described elsewhere herein.

[0148] Memory 730 includes volatile memory and / or non-volatile memory. For example, memory 730 may include random access memory (RAM), read-only memory (ROM), a hard disk drive, and / or another type of memory (e.g., flash memory, magnetic storage, and / or optical storage). Memory 730 may include main memory (e.g., including random access memory, read-only memory, or hard disk drive) and / or removable memory (e.g., removable via a universal serial bus connection). Memory 730 may be a non-transitory computer-readable medium. Memory 730 stores information, information related to the operation of device 700, instructions, and / or software (e.g., one or more software applications). In some embodiments, memory 730 includes one or more memories coupled to one or more processors (e.g., processor 720), for example via bus 710.

[0149] Input component 740 enables device 700 to receive input, such as user input and / or sensor input. For example, input component 740 may include a touchscreen, a keyboard, a keypad, a mouse, a button, a microphone, a switch, a sensor, a GPS sensor, an accelerometer, a gyroscope, and / or an actuator. Output component 750 enables device 700 to provide output, such as via a display, a speaker, and / or a light-emitting diode. Communication component 760 enables device 700 to communicate with other devices via a wired and / or wireless connection. For example, communication component 760 may include a receiver, a transmitter, a transceiver, a modem, a network interface card, and / or an antenna.

[0150] Apparatus 700 may perform one or more of the operations or processes described herein. For example, a non-transitory computer-readable medium (e.g., memory 730) may store a set of instructions (e.g., one or more instructions or codes) for execution by processor 720. Processor 720 may execute this set of instructions to perform one or more of the operations or processes described herein. In some embodiments, execution of instructions by one or more processors 720 causes one or more processors 720 and / or apparatus 700 to perform one or more of the operations or processes described herein. In some embodiments, hardwired circuitry is used in place of instructions, or in combination with instructions, to perform one or more of the operations or processes described herein. Additionally, or alternatively, processor 720 may be configured to perform one or more of the operations or processes described herein. Therefore, the embodiments described herein are not limited to any particular combination of hardware circuitry and software.

[0151] Figure 7 The number and arrangement of the components shown are provided as an example. Device 700 may include, in comparison... Figure 7 The components shown may be additional components, fewer components, different components, or components arranged differently. Additionally, or alternatively, a set of components of device 700 (e.g., one or more components) may perform one or more functions described as being performed by another set of components of device 700.

[0152] Figure 8 This is a flowchart of an example process 800 related to copper deposition using magnetic shielding. In some embodiments, Figure 8 One or more process blocks are formed by a system (e.g., a deposition system, e.g.) Figure 1 The environment is 100) to execute. In some implementations, Figure 8 One or more process blocks are performed by another device or set of devices that are separate from or include the system, such as a controller (e.g., controller 113) and / or a transmission mechanism (e.g., transmission mechanism 413). Additionally, or alternatively, Figure 8 One or more process blocks may be executed by one or more components of the device 700, such as processor 720, memory 730, input component 740, output component 50, and / or communication component 760.

[0153] like Figure 8 As shown, process 800 may include determining a first portion of a chamber relative to a deposition of a first copper layer, the first copper layer being thinner than a second copper layer relative to at least a second portion of the chamber (block 810). For example, controller 113 may determine a first portion of a deposition of a first copper layer in chamber 111 relative to a first copper layer, the first copper layer being thinner than a second copper layer in chamber 111 relative to at least a second portion, as described herein.

[0154] like Figure 8 As further shown, process 800 may include transmitting a command to position a magnetic shield adjacent to a chamber based on the first portion (block 820). For example, controller 113 may transmit a command (e.g., to transmission mechanism 413) based on the first portion to position a magnetic shield 216 adjacent to chamber 111, as described herein.

[0155] Process 800 may include additional implementations, such as any single implementation or any combination of implementations of one or more other processes described below and / or described elsewhere herein.

[0156] In a first embodiment, adjusting the position includes selecting a position adjacent to an upper electromagnet 407a in the chamber 111 and adjacent to the first portion.

[0157] In a second embodiment, either alone or in combination with the first embodiment, the transmission command includes selecting a position between an upper electromagnet 407a and a lower electromagnet 407b of chamber 111, and adjacent to the first portion.

[0158] In a third embodiment, either alone or in combination with one or more of the first and second embodiments, the transmission command includes a transmission command to the transmission mechanism 413 to move the magnetic shield 216 from a previous position to a current position.

[0159] In a fourth embodiment, either alone or in combination with one or more of the first to third embodiments, process 800 further includes transmitting instructions to at least one flow optimizer 405 associated with chamber 111 to direct copper ions to the second portion.

[0160] In a fifth embodiment, either alone or in combination with one or more of the first to fourth embodiments, process 800 further includes transmitting instructions to at least one electromagnet 407a / 407b associated with chamber 111 to direct copper ions to the second portion.

[0161] In a sixth embodiment, the first portion is determined, either alone or in combination with one or more of the first to fifth embodiments, to include simulating deposition on a wafer 409 to estimate the first portion and the second portion.

[0162] In a seventh embodiment, determining the first portion, either alone or in combination with one or more of the first to sixth embodiments, includes inputting one or more parameters related to the deposition into a machine learning model to determine the first portion.

[0163] Although Figure 8 Example blocks showing process 800, but in some implementations, process 800 includes more than Figure 8 The blocks depicted in the process can be additional blocks, fewer blocks, different blocks, or blocks arranged differently. Alternatively, two or more blocks in process 800 can be executed in parallel.

[0164] In this way, magnetic shielding reduces external noise in a chamber including a target and at least one electromagnet for copper physical vapor deposition. The shielding may have a thickness ranging from approximately 0.1 mm to approximately 10 mm to provide sufficient protection against radio frequency and other electromagnetic signals. Therefore, copper atoms in the chamber are less redirected by external noise. Furthermore, even if hardware failures occur during physical vapor deposition (e.g., electromagnet failure, wafer misalignment, and / or excessive offset caused by the flow optimizer), copper atoms are less susceptible to the effects of minor redirections from external noise. Consequently, back-end and / or mid-end process conductive structures are formed in a more consistent manner, which increases conductivity and improves the lifespan of electronic devices including back-end and / or mid-end process conductive structures.

[0165] As described in more detail above, some embodiments described herein provide an apparatus. The apparatus includes a chamber having at least one electromagnet and at least one flow optimizer configured to guide copper ions from a copper target onto a wafer. The apparatus also includes a magnetic shield adjacent to the chamber and configured to reduce electromagnetic noise within the chamber.

[0166] In some embodiments, the magnetic shield comprises an alloy selected from transition metals such as nickel, iron, copper, chromium, molybdenum, vanadium, or manganese. In some embodiments, the magnetic shield has a thickness ranging from about 0.1 mm to about 10 mm. In some embodiments, the magnetic shield has a length ranging from about 30 cm to about 150 cm. In some embodiments, the magnetic shield has a width ranging from about 10 cm to about 50 cm. In some embodiments, at least one electromagnet includes an upper electromagnet, and the magnetic shield is positioned adjacent to the upper electromagnet.

[0167] As described in more detail above, some embodiments described herein provide a method. The method includes determining a first portion of a chamber, the first portion relating to a deposition of a first copper layer, the first copper layer being thinner than a second copper layer relating to at least a second portion of the chamber. The method also includes adjusting the positioning of a magnetic shield adjacent to the chamber based on the first portion.

[0168] In some embodiments, adjusting the positioning includes selecting a position adjacent to an upper electromagnet within the chamber and adjacent to a first portion. In some embodiments, transmitting the command includes selecting a position between an upper electromagnet and a lower electromagnet within the chamber and adjacent to the first portion. In some embodiments, transmitting the command includes transmitting a command to a transport mechanism to move the magnetic shield from a previous position to the current position.

[0169] In some embodiments, the deposition method further includes transmitting a command to at least one flow optimizer associated with the chamber to direct copper ions to the second portion. In some embodiments, the deposition method further includes transmitting a command to at least one electromagnet associated with the chamber to direct copper ions to the second portion. In some embodiments, determining the first portion includes simulating deposition on a wafer to estimate the first and second portions. In some embodiments, determining the first portion includes inputting one or more parameters related to the deposition into a machine learning model to determine the first portion.

[0170] As described in more detail above, some embodiments described herein provide a system. The system includes at least one flow optimizer and at least one electromagnet, the flow optimizer being configured to guide copper ions from a copper target to a wafer, and the electromagnet being configured to further guide the copper ions to the wafer. The system also includes a magnetic shield configured to reduce electromagnetic noise outside the at least one flow optimizer and the at least one electromagnet. The system additionally includes at least one processor configured to determine a location of the magnetic shield based on a first portion of the wafer, the first portion relating to a deposition of a first copper layer, the first copper layer being thinner than a second copper layer deposited in at least a second portion of a chamber.

[0171] In some embodiments, at least one electromagnet includes at least one upper electromagnet surrounding a chamber and a lower electromagnet surrounding the chamber. In some embodiments, a magnetic shield is positioned between the upper and lower electromagnets. In some embodiments, at least one processor is configured to use a schematic diagram relating to the wafer to determine a first portion of the wafer. In some embodiments, at least one processor is configured to use a simulation of copper deposition on the wafer to determine a first portion of the wafer. In some embodiments, at least one flow optimizer includes a collimator configured to distribute copper ions in a copper target and guide the copper ions to the wafer.

[0172] In this article, "satisfying a threshold" can refer to values ​​greater than the threshold, greater than or equal to the threshold, less than the threshold, less than or equal to the threshold, equal to the threshold, not equal to the threshold, etc., depending on the context.

[0173] The foregoing outlines features of several embodiments to enable those skilled in the art to better understand aspects of this disclosure. Those skilled in the art will understand that they can readily use this disclosure as a basis for designing or modifying other processes and structures to achieve the same purposes and / or benefits as the embodiments described herein. Those skilled in the art will also understand that such equivalent structures do not depart from the concept and scope of this disclosure, and that various changes, substitutions, and replacements can be made therewith without departing from the concept and scope of this disclosure.

Claims

1. A deposition apparatus, comprising: A chamber includes at least one electromagnet and at least one flow optimizer configured to guide copper ions from a copper target onto a wafer. A magnetic shield is located adjacent to the cavity and configured to reduce electromagnetic noise within the cavity. The magnetic shield has a length and a width, the length being no greater than half the perimeter of the cavity and the width being no greater than half the height of the cavity. A controller configured to determine a first portion and a second portion of the chamber, the first portion relating to a deposition of a first copper layer, the first copper layer being thinner than a second copper layer relating to the second portion of the chamber; as well as A transmission mechanism is configured to move the magnetic shield to a position determined by the controller, such that the magnetic shield is positioned adjacent to the first portion of the chamber.

2. The deposition apparatus of claim 1, wherein the magnetic shield comprises an alloy of a transition metal selected from nickel, iron, copper, chromium, molybdenum, vanadium, or manganese.

3. The deposition apparatus of claim 1, wherein the magnetic shield has a thickness in the range of 0.1 mm to 10 mm.

4. The deposition apparatus of claim 1, wherein the length of the magnetic shield is in the range of 30 cm to 150 cm.

5. The deposition apparatus of claim 1, wherein the width of the magnetic shield is in the range of 10 cm to 50 cm.

6. The deposition apparatus of claim 1, wherein the at least one electromagnet includes an upper electromagnet, and the magnetic shield is positioned adjacent to the upper electromagnet.

7. A deposition method using the deposition apparatus according to any one of claims 1-6, comprising: A first portion of a chamber is determined, the first portion being associated with a deposition of a first copper layer, the first copper layer being thinner than a second copper layer associated with a second portion of the chamber; as well as A command is transmitted to position a magnetic shield adjacent to the chamber based on the first portion, such that the magnetic shield is positioned adjacent to the first portion.

8. The deposition method of claim 7, wherein transmitting the instruction comprises: A location is selected between an upper electromagnet and a lower electromagnet in the chamber, and adjacent to the first part.

9. The deposition method of claim 7, wherein transmitting the instruction comprises: A command is transmitted to a transmission mechanism to move the magnetic shield from a previous position to the current position.

10. The deposition method of claim 7, further comprising: A command is transmitted to at least one flow optimizer associated with the chamber to direct copper ions to the second part.

11. The deposition method of claim 7, further comprising: A command is transmitted to at least one electromagnet associated with the chamber to guide copper ions to the second part.

12. The deposition method of claim 7, wherein determining the first part comprises: The deposition on a wafer is simulated to estimate the first portion and the second portion.

13. The deposition method of claim 7, wherein determining the first part comprises: One or more parameters related to the deposition are input into a machine learning model to determine the first part.

14. A sedimentation system, comprising: At least one flow optimizer is configured to direct copper ions from a copper target to a wafer; At least one electromagnet, configured to further guide copper ions to a wafer, surrounds a chamber; A magnetic shield is configured to reduce electromagnetic noise outside the at least one flow optimizer and the at least one electromagnet. The magnetic shield has a length and a width, the length being no greater than half the perimeter of the chamber and the width being no greater than half the height of the chamber. as well as At least one processor is configured to determine the location of the magnetic shield based on a first portion of the wafer, the first portion being related to a deposition of a first copper layer, the first copper layer being thinner than a second copper layer deposited on at least a second portion of the wafer, wherein the magnetic shield is located adjacent to the first portion.

15. The deposition system of claim 14, wherein the at least one electromagnet comprises at least one upper electromagnet and a lower electromagnet, the upper electromagnet surrounding the chamber and the lower electromagnet surrounding the chamber.

16. The deposition system of claim 15, wherein the magnetic shield is positioned between the upper electromagnet and the lower electromagnet.

17. The deposition system of claim 14, wherein the at least one processor is configured to use a schematic diagram relating to the wafer to determine a first portion of the wafer.

18. The deposition system of claim 14, wherein the at least one processor is configured to use a simulation of copper deposition on the wafer to determine a first portion of the wafer.

19. The deposition system of claim 14, wherein the at least one flow optimizer includes a collimator configured to distribute copper ions in the copper target and guide the copper ions to the wafer.

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