An apparatus and method for manufacturing single-crystal silicon rods

Abstract

This invention discloses an apparatus and method for manufacturing monocrystalline silicon rods. The apparatus includes a first measurement module, a second measurement module, and a processor. The first measurement module is configured to acquire a first diameter of the monocrystalline silicon rod at a predetermined distance above the melt-solid-liquid interface. The second measurement module is configured to acquire a second diameter of the monocrystalline silicon rod at the melt-solid-liquid interface. The processor is configured to calibrate the setting parameters of the second measurement module based on the first diameter, and is further configured to adjust the pulling speed and / or temperature gradient based on the second diameter when the second diameter acquired by the calibrated second measurement module exceeds a target range, so as to keep the second diameter within the target range.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to an apparatus and method for manufacturing single-crystal silicon rods. Background Technology

[0002] Single-crystal silicon rods used to manufacture semiconductor devices are primarily produced using the Czochralski method, also known as the Czochralski method. This involves immersing a seed crystal in molten silicon within a crucible in a single-crystal furnace. While rotating the seed crystal and crucible, the seed crystal is simultaneously pulled up, and subsequent processes such as crystal pulling, shoulder formation, shoulder rotation, equal diameter setting, and tailing are performed at the end of the seed crystal to obtain the single-crystal silicon rod. Currently, it has been found that the internal defects of single-crystal silicon rods are related to the pulling rate and the temperature gradient during crystal growth.

[0003] The constant diameter stage is a crucial process in crystal growth and is key to ensuring the quality of single-crystal silicon rods. To obtain high-quality single-crystal silicon rods, an Automatic Diameter Control (ADC) device is typically used to automatically control the crystal growth diameter. This ADC device mainly utilizes an optical pyrometer sensor and a charge-coupled device (CCD) camera to monitor the growth diameter of the single-crystal silicon rod. It assumes that the liquid level of the molten silicon remains constant at a certain position. During crystal growth, the optical pyrometer sensor receives the thermal radiation from the solid-liquid interface of the molten silicon and outputs the corresponding brightness value. This brightness value allows the determination of the growth diameter of the single-crystal silicon rod, thus achieving real-time monitoring of the crystal growth diameter.

[0004] However, since the ADC device is set in the early stage of crystal growth, the set value may have errors. In addition, due to the limitations of its measurement principle, the diameter information fed back by the ADC device also has errors, especially when the furnace body vibrates or the crystal shakes, the error is larger. These factors lead to inaccurate crystal diameter information in the final collection, which in turn affects the quality of the single crystal silicon rod. Summary of the Invention

[0005] In view of the above, embodiments of the present invention aim to provide an apparatus and method for manufacturing monocrystalline silicon rods. Based on the above, embodiments of the present invention propose an apparatus and method for manufacturing monocrystalline silicon rods; capable of measuring the actual diameter of the monocrystalline silicon rod during the crystal pulling operation and feeding the measurement results back to an ADC device to promptly calibrate the setting parameters of the ADC device, thereby improving the measurement accuracy of the ADC device. Using the calibrated measurement results of the ADC device, the diameter of the monocrystalline silicon rod can be controlled more accurately, thereby improving the quality of the monocrystalline silicon rod.

[0006] The technical solution of this invention is implemented as follows:

[0007] In a first aspect, embodiments of the present invention provide an apparatus for manufacturing single-crystal silicon rods, the apparatus comprising: a first measurement module, a second measurement module, and a processor, wherein...

[0008] The first measurement module is configured to obtain the first diameter of the single-crystal silicon rod at a predetermined distance above the melt solid-liquid interface;

[0009] The second measurement module is configured to obtain the second diameter of the single-crystal silicon rod at the melt solid-liquid interface;

[0010] The processor is configured to calibrate the setting parameters of the second measurement module according to the first diameter, and is further configured to adjust the lifting speed and / or temperature gradient according to the second diameter when the second diameter obtained by the calibrated second measurement module exceeds the target range, so as to keep the second diameter within the target range.

[0011] Preferably, the second measurement module is further configured to obtain a third diameter of the single-crystal silicon rod at the melt solid-liquid interface before calibration, wherein the first diameter and the third diameter are the diameters of the same portion of the single-crystal silicon rod;

[0012] The processor is configured to compare the first diameter and the third diameter, and is configured to calibrate the setting parameters of the second measurement module if the difference between the first diameter and the third diameter exceeds a set threshold; or if the difference does not exceed the set threshold, the calibration value of the setting parameters of the second measurement module is zero.

[0013] Preferably, the second measuring module is further configured to acquire the third diameter of the single crystal silicon rod at the melt solid-liquid interface while the first measuring module acquires the first diameter;

[0014] The processor is configured to compare the first diameter and the third diameter, and is configured to calibrate the setting parameters of the second measurement module if the difference between the first diameter and the third diameter exceeds a set threshold, or to set the calibration value of the setting parameters of the second measurement module to zero if the difference does not exceed the set threshold.

[0015] Preferably, the processor is configured to use the third diameter as the second diameter if the difference does not exceed the set threshold.

[0016] Preferably, the setting parameters include: the deflection angle and / or horizontal distance of the second measuring module relative to the central axis of the single-crystal silicon rod.

[0017] Secondly, embodiments of the present invention provide a method for manufacturing a single-crystal silicon rod, the method comprising:

[0018] The first diameter of the single-crystal silicon rod at a predetermined distance above the melt solid-liquid interface is obtained using the first measurement module;

[0019] The setting parameters of the second measurement module are calibrated according to the first diameter.

[0020] The second diameter of the single-crystal silicon rod at the melt solid-liquid interface is obtained by the calibrated second measurement module;

[0021] When the second diameter exceeds the target range, the lifting speed and / or temperature gradient are adjusted according to the second diameter to keep the second diameter within the target range.

[0022] Preferably, the setting parameters for calibrating the second measurement module based on the first diameter further include:

[0023] Before the second measurement module is calibrated, the third diameter of the single-crystal silicon rod at the melt solid-liquid interface is obtained using the second measurement module, wherein the first diameter and the third diameter are the diameters of the same portion of the single-crystal silicon rod.

[0024] By comparing the first diameter and the third diameter, if the difference between the first diameter and the third diameter exceeds a set threshold, the setting parameters of the second measurement module are calibrated; or if the difference does not exceed the set threshold, the calibration value of the setting parameters of the second measurement module is zero.

[0025] Preferably, the setting parameters for calibrating the second measurement module based on the first diameter further include:

[0026] While using the first measurement module to obtain the first diameter of the single crystal silicon rod at a predetermined distance above the melt solid-liquid interface, the second measurement module is used to obtain the third diameter of the single crystal silicon rod at the melt solid-liquid interface.

[0027] By comparing the first diameter and the third diameter, if the difference between the first diameter and the third diameter exceeds a set threshold, the setting parameters of the second measurement module are calibrated; or if the difference does not exceed the set threshold, the calibration value of the setting parameters of the second measurement module is zero.

[0028] Preferably, the setting parameters of calibrating the second measurement module according to the first diameter further include: if the difference does not exceed the set threshold, the third diameter is used as the second diameter.

[0029] Preferably, calibrating the setting parameters of the second measuring module according to the first diameter includes: adjusting the deflection angle and / or horizontal distance of the second measuring module relative to the central axis of the single crystal silicon rod.

[0030] This invention provides an apparatus and method for manufacturing monocrystalline silicon rods. The apparatus includes a first measurement module, a second measurement module, and a processor. The processor calibrates the setting parameters of the second measurement module using the actual diameter of the monocrystalline silicon rod obtained by the first measurement module. This reduces measurement errors caused by the positioning error of the second measurement module relative to the monocrystalline silicon rod. Consequently, the real-time diameter of the monocrystalline silicon rod at the melt-solid interface obtained by the calibrated second measurement module is more accurate. Furthermore, the processor can adjust the crystal pulling parameters based on the measurement results obtained by the calibrated second measurement module. Through the coordinated operation of the two measurement modules and the processor, the growth diameter of the monocrystalline silicon rod can be more accurately and automatically controlled, improving both production efficiency and the quality of the monocrystalline silicon rod product. Attached Figure Description

[0031] Figure 1 This is a schematic diagram of a single crystal furnace structure provided in an embodiment of the present invention;

[0032] Figure 2 A schematic diagram of an apparatus for manufacturing single-crystal silicon rods provided in an embodiment of the present invention;

[0033] Figure 3 This is a flowchart illustrating a method for manufacturing a single-crystal silicon rod according to an embodiment of the present invention. Detailed Implementation

[0034] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.

[0035] See Figure 1 It shows a single crystal furnace 1 that can realize the technical solution of the embodiment of the present invention. The single crystal furnace 1 may include: a furnace body 10, in which a heating system and a pulling system are provided.

[0036] The heating system includes a graphite crucible 20, a quartz crucible 30, and a heater 40. The quartz crucible 30 holds silicon raw materials, such as polycrystalline silicon. The silicon raw materials are heated and melted into a molten mass MS within the quartz crucible 30. The graphite crucible 20 surrounds the quartz crucible 30, providing support during heating. The heater 40 is located outside the graphite crucible 20. Above the quartz crucible 30, a vertically oriented cylindrical water-cooling jacket 50 and a horizontally oriented heat-insulating cover plate 60 are provided. The water-cooling jacket 50 passes through the heat-insulating cover plate 60, altering the longitudinal and transverse temperature gradients of the drawn silicon rod and improving its cooling rate.

[0037] The lifting system includes a vertically arranged crucible shaft 70 and a seed crystal cable 80. The seed crystal cable 80 is positioned above the quartz crucible 30, and the crucible shaft 70 is positioned at the bottom of the graphite crucible 20. A seed crystal is mounted on the bottom of the seed crystal cable 80 via a clamp, and its top is connected to a seed crystal driving device, enabling it to slowly lift the seed crystal upward while rotating. The bottom of the crucible shaft 70 is equipped with a crucible shaft driving device (not shown in the figure), which enables the crucible shaft 70 to drive the quartz crucible 30 to rotate.

[0038] It should be noted that, Figure 1 The structure of the crystal pulling furnace 1 shown is not specifically limited. In order to clearly illustrate the technical solution of the embodiments of the present invention, other components required for carrying out the Czochralski method to prepare single crystal silicon rods are omitted.

[0039] based on Figure 1 The crystal pulling furnace 1 shown can also have an observation window 90 above the furnace body 10 for an ADC device 2 to monitor the crystal growth diameter. The ADC device 2 mainly includes an optical pyrometer sensor 21 and a CCD camera 22. The optical pyrometer sensor 21 is configured to receive the thermal radiation reflected from the solid-liquid interface of the molten silicon to obtain the corresponding brightness value. The CCD camera 22 is configured to monitor the change in the liquid level of the molten silicon MS and the deviation in the crystal growth diameter during the crystal growth process. Using the monitoring results of the ADC device 2, the pulling speed can be controlled, thereby controlling the crystal growth diameter.

[0040] However, in conventional technical solutions, the settings of the ADC device 2 relative to the target measurement position are set by the operator based on experience before the crystal pulling operation begins. Since the actual diameter of the pulled single-crystal silicon rod can only be measured after a single crystal pulling operation, it is impossible to calibrate the settings of the ADC device 2 during the crystal pulling process. Furthermore, while the ADC device 2 remains fixed throughout a single crystal pulling operation, the liquid level of the molten silicon changes constantly as the crystal grows. Different liquid level positions correspond to deviations in the crystal growth diameter. Moreover, because the crystal is pulled upwards while rotating, the rotation of the crystal and the quartz crucible causes fluctuations in the solid-liquid interface of the molten silicon. These factors further contribute to errors in the measurement results of the fixed-setting ADC device 2. Therefore, it is necessary to calibrate the settings of the ADC device 2 during the crystal pulling process.

[0041] In view of the above, embodiments of the present invention propose an apparatus and method for manufacturing monocrystalline silicon rods; the apparatus and method can measure the actual diameter of the monocrystalline silicon rod during the crystal pulling operation and feed the measurement results back to the ADC device to calibrate the setting parameters of the ADC device in a timely manner, thereby improving the measurement accuracy of the ADC device. The diameter of the monocrystalline silicon rod can be controlled more accurately using the measurement results of the calibrated ADC device, thereby improving the quality of the monocrystalline silicon rod.

[0042] To facilitate understanding of the technical solution of this application, the following is combined with... Figure 2 An apparatus for manufacturing single-crystal silicon rods according to an embodiment of the present invention will be described.

[0043] This invention provides an apparatus 100 for manufacturing single-crystal silicon rods. The apparatus 100 includes: a first measurement module 101, a second measurement module 102, and a processor 103.

[0044] The first measurement module 101 is configured to acquire the first diameter D1 of the single crystal silicon rod at a predetermined distance PD above the melt solid-liquid interface;

[0045] The second measurement module 102 is configured to obtain the second diameter of the single crystal silicon rod at the melt solid-liquid interface;

[0046] The processor 103 is configured to calibrate the setting parameters of the second measurement module 102 according to the first diameter D1, and is also configured to adjust the lifting speed and / or temperature gradient according to the second diameter when the second diameter obtained by the calibrated second measurement module 102 exceeds the target range, so as to keep the second diameter within the target range.

[0047] like Figure 2As shown, the first measurement module 101 of the device 100 can be, for example, a laser measuring instrument and is located inside the furnace body 10, for example, at the lower end of the water-cooling jacket 50, so as close as possible to the melt-solid-liquid interface. The second measurement module 102 of the device 100 can be, for example, an ADC device. Before the crystal pulling operation begins, the second measurement module 102 can be set on the outside of the furnace body 10 based on empirical parameters to align with the position of the single crystal silicon rod to be pulled at the melt-solid-liquid interface. When the equal diameter stage begins, the first measurement module 101 can obtain the first diameter D1 of the single crystal silicon rod at a predetermined distance PD above the melt-solid-liquid interface. For example, the water-cooling jacket can be set so that its lower end is located approximately 100 mm above the melt-solid-liquid interface. The first measurement module 101, positioned at the lower end of the water-cooling jacket, can measure the diameter of the monocrystalline silicon rod 15mm to 55mm above the melt-solid interface by adjusting the deflection angle. That is, the predetermined distance PD can be, for example, 15mm to 55mm. Since the monocrystalline silicon rod is already cylindrical when grown above the melt-solid interface, the first diameter D1 is also the actual diameter of the monocrystalline silicon rod. After receiving the first diameter D1, the processor 103 calibrates the setting parameters of the second measurement module 102 based on the first diameter D1. That is, it compares the first diameter D1 with the target diameter. If the first diameter D1 exceeds the predetermined range, it calibrates the setting parameters of the second measurement module 102 relative to the monocrystalline silicon rod based on the comparison result, so that the second measurement module... Block 102 can more accurately align the position of the monocrystalline silicon rod at the melt-solid-liquid interface. It should be noted that the "setting parameters" in this document can be understood as the positional parameters of the second measurement module 102 relative to the monocrystalline silicon rod. For example, when the target diameter is 308 mm, if the measurement result of the first measurement module 101 exceeds the range of 306 mm to 310 mm, the setting parameters of the second measurement module 102 relative to the monocrystalline silicon rod will be calibrated based on the measurement result of the first measurement module 101. The second diameter D2 obtained by the calibrated second measurement module 102 is sent back to the processor 103. The processor 103 adjusts the crystal pulling parameters based on this second diameter D2 to control the diameter of the monocrystalline silicon rod within the target range, in order to manufacture a 300 mm diameter monocrystalline silicon rod. Taking a single-crystal silicon rod of size m as an example, when the second diameter D2 measured by the calibrated second measuring module 102 is 308 mm to 310 mm, the pulling speed is increased by 0.05% to 0.5% or the heating power of the heater 40 is increased by 0.01% to 0.02%, or the heating power of the heater 40 can be increased by 0.01% while the pulling speed is increased by 0.2%; when the second diameter D2 measured by the calibrated second measuring module 102 is 306 mm to 308 mm, the pulling speed is decreased by 0.05% to 0.5% or the heating power of the heater 40 is decreased by 0.01%, or the heating power of the heater 40 can be decreased by 0.005% while the pulling speed is decreased by 0.2%.

[0048] This invention provides an apparatus 100 for manufacturing monocrystalline silicon rods. The apparatus 100 includes a first measurement module 101, a second measurement module 102, and a processor 103. The processor 103 calibrates the setting parameters of the second measurement module 102 using the actual diameter of the monocrystalline silicon rod obtained by the first measurement module 101. This reduces measurement errors caused by the setting position error of the second measurement module 102 relative to the monocrystalline silicon rod. Therefore, the real-time diameter of the monocrystalline silicon rod at the melt-solid interface obtained by the calibrated second measurement module 102 is more accurate. In addition, the processor 103 can also adjust the crystal pulling parameters based on the measurement results obtained by the calibrated second measurement module 102. Through the coordinated operation of the two measurement modules and the processor, the growth diameter of the monocrystalline silicon rod can be automatically and accurately controlled, which not only improves production efficiency but also enhances the quality of the monocrystalline silicon rod products.

[0049] The following describes, with reference to a preferred embodiment of the present invention, how to calibrate the setting parameters of the second measuring module based on the first diameter.

[0050] According to a preferred embodiment of the present invention, the second measurement module 102 is further configured to obtain the third diameter D3 of the single crystal silicon rod at the melt solid-liquid interface before calibration, wherein the first diameter D1 and the third diameter D3 are the diameters of the same portion of the single crystal silicon rod;

[0051] The processor 103 is configured to compare the first diameter D1 and the third diameter D3, and is configured to calibrate the setting parameters of the second measurement module 102 if the difference between the first diameter D1 and the third diameter D3 exceeds a set threshold; or if the difference does not exceed the set threshold, the calibration value of the setting parameters of the second measurement module 102 is zero.

[0052] Specifically, before the first measurement module 101 acquires the first diameter D1, the second measurement module 102 can acquire the diameter of the single-crystal silicon rod at the melt-solid interface, i.e., the third diameter D3. Then, the processor 103 can control the first measurement module 101 to remeasure the portion measured by the second measurement module 102 based on the pulling speed and the growth time of the single-crystal silicon rod, i.e., acquire the first diameter D1. The third diameter D3 is sent to the processor 103. The processor 103 compares the first diameter D1 and the third diameter D3 and determines whether the second measurement module 102 needs to be calibrated based on the comparison result. Specifically, if the difference between the first diameter D1 and the third diameter D3 exceeds a set threshold, for example, if the absolute value of the difference between the first diameter D1 and the third diameter D3 is greater than 2.2 mm, the processor 103 determines that the set parameters of the second measurement module 102 need to be calibrated, and then calibrates based on the first diameter D1. The difference between the first diameter D1 and the third diameter D3 is used to calibrate the second measurement module 102. If the difference between the first diameter D1 and the third diameter D3 does not exceed a set threshold, for example, if the absolute value of the difference between the first diameter D1 and the third diameter D3 is less than or equal to 2.2 mm, the processor 103 determines that the second measurement module 102 does not need to be calibrated. According to the above embodiment, by measuring the same part of the monocrystalline silicon rod successively by two measurement modules and comparing the results of the two measurements, it is possible to directly and accurately determine whether the measurement error of the second measurement module 102 is within the allowable range. The comparison result can also be used as the basis for calibrating the second measurement module 102. After calibration, the second measurement module 102 measures the diameter of the monocrystalline silicon rod, and the obtained second diameter D2 is sent to the processor 103 again. The processor 103 uses this as the basis for adjusting the pulling speed and / or temperature gradient, thereby controlling the growth diameter of the monocrystalline silicon rod.

[0053] According to another preferred embodiment of the present invention, the second measuring module 102 is further configured to obtain the third diameter D3 of the single crystal silicon rod at the melt solid-liquid interface while the first measuring module 101 obtains the first diameter D1;

[0054] The processor 103 is configured to compare the first diameter D1 and the third diameter D3, and is configured to calibrate the setting parameters of the second measurement module 102 if the difference between the first diameter D1 and the third diameter D3 exceeds a set threshold, or to set the calibration value of the setting parameters of the second measurement module 102 to zero if the difference does not exceed the set threshold.

[0055] Specifically, while the first measurement module 101 acquires the first diameter D1, the second measurement module 102 can acquire the diameter of the monocrystalline silicon rod at the melt-solid interface, i.e., the third diameter D3. Although the first measurement module 101 and the second measurement module 102 do not measure the diameter of the same part of the monocrystalline silicon rod, the parts measured by the two measurement modules are relatively close in the axial direction. Therefore, the first diameter D1 and the third diameter D3 can be approximately equivalent to the diameter of the same part of the monocrystalline silicon rod. For example, while the second measurement module 102 acquires the diameter of the monocrystalline silicon rod at the melt-solid interface, the first measurement module 101 measures the diameter of the monocrystalline silicon rod 15mm to 55mm above the melt-solid interface, i.e., the predetermined distance PD is 15mm to 55mm. The first diameter D1 and the third diameter D3 are sent to the processor 103. The processor 103 compares the first diameter D1 and the third diameter D3 and determines whether the second measurement module 102 needs to be calibrated based on the comparison result. Specifically, if the difference between the first diameter D1 and the third diameter D3 exceeds a set threshold, for example, the first diameter D1 is not calibrated. If the absolute value of the difference between the first diameter D1 and the third diameter D3 is greater than 2.2 mm, the processor 103 determines that the second measurement module 102 needs to be calibrated, and calibrates the second measurement module 102 according to the difference between the first diameter D1 and the third diameter D3; if the difference between the first diameter D1 and the third diameter D3 does not exceed a set threshold, for example, if the absolute value of the difference between the first diameter D1 and the third diameter D3 is less than or equal to 2.2 mm, the processor 103 determines that the second measurement module 102 does not need to be calibrated; according to the above embodiment, by simultaneously measuring two adjacent parts on the single crystal silicon rod by two measurement modules and comparing the measurement results, it is possible to directly and quickly determine whether the measurement error of the second measurement module 102 is within the allowable range, and the comparison result can also be used as the basis for calibrating the second measurement module 102. After calibration, the second measurement module 102 measures the diameter of the single crystal silicon rod, and the obtained second diameter D2 is sent to the processor 103 again. The processor 103 uses this as the basis for adjusting the pulling speed and / or temperature gradient, thereby controlling the growth diameter of the single crystal silicon rod.

[0056] According to a preferred embodiment of the present invention, the processor 103 is configured to use the third diameter D3 as the second diameter D2 if the difference does not exceed the set threshold.

[0057] Specifically, when the difference between the first diameter D1 and the third diameter D3 does not exceed the set threshold, the processor 103 determines that the second measurement module 102 does not need to be calibrated. This means that the third diameter D3 obtained by the second measurement module 102 can be directly used to adjust the lifting speed and / or temperature gradient. In this way, once the processor 103 determines that the second measurement module 102 does not need to be calibrated, it can immediately enter the adjustment stage of the lifting speed and / or temperature gradient, avoiding unnecessary repetitive operations, making the whole operation process more reasonable and improving the operation efficiency.

[0058] According to a preferred embodiment of the present invention, the setting parameters include: the deflection angle and / or horizontal distance of the second measuring module relative to the central axis of the single crystal silicon rod.

[0059] Taking the production of a single-crystal silicon rod with a diameter of 300mm as an example, if the first diameter D1 obtained by the first measuring module 101 is greater than 310mm, then the second measuring module 102 is deflected 1.8 degrees to 2.2 degrees toward the central axis of the single-crystal silicon rod, or the second measuring module 102 is horizontally shifted 1.7mm to 2.3mm toward the central axis of the single-crystal silicon rod, or the second measuring module 102 is deflected 0.8 degrees to 1.2 degrees toward the central axis of the single-crystal silicon rod and horizontally shifted 0.7mm to 1.3mm toward the central axis of the single-crystal silicon rod; if the first diameter D1 obtained by the first measuring module 101 is greater than 310mm, then the second measuring module 102 is deflected 1.8 degrees to 2.2 degrees toward the central axis of the single-crystal silicon rod and horizontally shifted 0.7mm to 1.3mm toward the central axis of the single-crystal silicon rod. If the first diameter D1 is equal to the target diameter, then no adjustment is made to the second measuring module 102; if the first diameter D1 obtained by the first measuring module 101 is less than 306mm, then the second measuring module 102 is deflected by 1.8 to 2.2 degrees in the direction away from the central axis of the single crystal silicon rod, or the second measuring module 102 is horizontally shifted by 1.7 to 2.3mm in the direction away from the central axis of the single crystal silicon rod, or the second measuring module 102 is deflected by 0.8 to 1.2 degrees in the direction away from the central axis of the single crystal silicon rod and horizontally shifted by 0.7 to 1.3mm in the direction away from the central axis of the single crystal silicon rod.

[0060] See Figure 3 The present invention also proposes a method for manufacturing a single-crystal silicon rod, the method comprising:

[0061] S101. Use the first measurement module to obtain the first diameter of the single crystal silicon rod at a predetermined distance above the melt solid-liquid interface;

[0062] S102. Calibrate the setting parameters of the second measurement module according to the first diameter;

[0063] S103. The second diameter of the single crystal silicon rod at the melt solid-liquid interface is obtained by the calibrated second measurement module;

[0064] S104. When the second diameter exceeds the target range, adjust the lifting speed and / or temperature gradient according to the second diameter to keep the second diameter within the target range.

[0065] According to a preferred embodiment of the present invention, the setting parameters of the second measuring module calibrated according to the first diameter further include:

[0066] Before the second measurement module is calibrated, the third diameter of the single-crystal silicon rod at the melt solid-liquid interface is obtained using the second measurement module, wherein the first diameter and the third diameter are the diameters of the same portion of the single-crystal silicon rod.

[0067] By comparing the first diameter and the third diameter, if the difference between the first diameter and the third diameter exceeds a set threshold, the setting parameters of the second measurement module are calibrated; or if the difference does not exceed the set threshold, the calibration value of the setting parameters of the second measurement module is zero.

[0068] According to a preferred embodiment of the present invention, the setting parameters of the second measuring module calibrated according to the first diameter further include:

[0069] While using the first measurement module to obtain the first diameter of the single crystal silicon rod at a predetermined distance above the melt solid-liquid interface, the second measurement module is used to obtain the third diameter of the single crystal silicon rod at the melt solid-liquid interface.

[0070] By comparing the first diameter and the third diameter, if the difference between the first diameter and the third diameter exceeds a set threshold, the setting parameters of the second measurement module are calibrated; or if the difference does not exceed the set threshold, the calibration value of the setting parameters of the second measurement module is zero.

[0071] According to a preferred embodiment of the present invention, the setting parameters of the second measurement module calibrated according to the first diameter further include: if the difference does not exceed the set threshold, the third diameter is used as the second diameter.

[0072] According to a preferred embodiment of the present invention, calibrating the setting parameters of the second measuring module based on the first diameter includes: adjusting the deflection angle and / or horizontal distance of the second measuring module relative to the central axis of the single crystal silicon rod.

[0073] It should be noted that the technical solutions described in the embodiments of the present invention can be combined arbitrarily without conflict.

[0074] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. An apparatus for manufacturing single-crystal silicon rods, characterized in that, The device includes: a first measurement module, a second measurement module, and a processor, wherein, The first measurement module is configured to obtain the first diameter of the single-crystal silicon rod at a predetermined distance above the melt solid-liquid interface; The second measurement module is configured to obtain the second diameter of the single-crystal silicon rod at the melt solid-liquid interface; The processor is configured to calibrate the setting parameters of the second measurement module according to the first diameter, and is further configured to adjust the lifting speed and / or temperature gradient according to the second diameter when the second diameter obtained by the calibrated second measurement module exceeds the target range, so as to keep the second diameter within the target range. The second measurement module is further configured to obtain a third diameter of the single-crystal silicon rod at the melt solid-liquid interface before calibration, wherein the first diameter and the third diameter are the diameters of the same portion of the single-crystal silicon rod; The processor is configured to compare the first diameter and the third diameter, and is configured to calibrate the setting parameters of the second measurement module if the difference between the first diameter and the third diameter exceeds a set threshold; or if the difference does not exceed the set threshold, the calibration value of the setting parameters of the second measurement module is zero.

2. The apparatus according to claim 1, characterized in that, The processor is configured to use the third diameter as the second diameter if the difference does not exceed the set threshold.

3. The apparatus according to claim 1 or 2, characterized in that, The setting parameters include: the deflection angle and / or horizontal distance of the second measuring module relative to the central axis of the single crystal silicon rod.

4. An apparatus for manufacturing single-crystal silicon rods, characterized in that, The device includes: a first measurement module, a second measurement module, and a processor, wherein, The first measurement module is configured to obtain the first diameter of the single-crystal silicon rod at a predetermined distance above the melt solid-liquid interface; The second measurement module is configured to obtain the second diameter of the single-crystal silicon rod at the melt solid-liquid interface; The processor is configured to calibrate the setting parameters of the second measurement module according to the first diameter, and is further configured to adjust the lifting speed and / or temperature gradient according to the second diameter when the second diameter obtained by the calibrated second measurement module exceeds the target range, so as to keep the second diameter within the target range. The second measurement module is further configured to acquire the third diameter of the single-crystal silicon rod at the melt solid-liquid interface while the first measurement module acquires the first diameter; The processor is configured to compare the first diameter and the third diameter, and is configured to calibrate the setting parameters of the second measurement module if the difference between the first diameter and the third diameter exceeds a set threshold, or to set the calibration value of the setting parameters of the second measurement module to zero if the difference does not exceed the set threshold.

5. The apparatus according to claim 4, characterized in that, The processor is configured to use the third diameter as the second diameter if the difference does not exceed the set threshold.

6. The apparatus according to claim 4 or 5, characterized in that, The setting parameters include: the deflection angle and / or horizontal distance of the second measuring module relative to the central axis of the single crystal silicon rod.

7. A method for manufacturing a single-crystal silicon rod, characterized in that, The method includes: The first diameter of the single-crystal silicon rod at a predetermined distance above the melt solid-liquid interface is obtained using the first measurement module; The setting parameters of the second measurement module are calibrated according to the first diameter. The second diameter of the single-crystal silicon rod at the melt solid-liquid interface is obtained by the calibrated second measurement module; When the second diameter exceeds the target range, the lifting speed and / or temperature gradient are adjusted according to the second diameter to keep the second diameter within the target range. The setting parameters for calibrating the second measurement module according to the first diameter also include: Before the second measurement module is calibrated, the third diameter of the single-crystal silicon rod at the melt solid-liquid interface is obtained using the second measurement module, wherein the first diameter and the third diameter are the diameters of the same portion of the single-crystal silicon rod. By comparing the first diameter and the third diameter, if the difference between the first diameter and the third diameter exceeds a set threshold, the setting parameters of the second measurement module are calibrated; or if the difference does not exceed the set threshold, the calibration value of the setting parameters of the second measurement module is zero.

8. The method according to claim 7, characterized in that, The setting parameters for calibrating the second measurement module based on the first diameter further include: if the difference does not exceed the set threshold, the third diameter is used as the second diameter.

9. The method according to claim 7 or 8, characterized in that, The setting parameters of the second measurement module are calibrated according to the first diameter, including adjusting the deflection angle and / or horizontal distance of the second measurement module relative to the central axis of the single crystal silicon rod.

10. A method for manufacturing a single-crystal silicon rod, characterized in that, The method includes: The first diameter of the single-crystal silicon rod at a predetermined distance above the melt solid-liquid interface is obtained using the first measurement module; The setting parameters of the second measurement module are calibrated according to the first diameter. The second diameter of the single-crystal silicon rod at the melt solid-liquid interface is obtained by the calibrated second measurement module; When the second diameter exceeds the target range, the lifting speed and / or temperature gradient are adjusted according to the second diameter to keep the second diameter within the target range. The setting parameters for calibrating the second measurement module according to the first diameter also include: While using the first measurement module to obtain the first diameter of the single crystal silicon rod at a predetermined distance above the melt solid-liquid interface, the second measurement module is used to obtain the third diameter of the single crystal silicon rod at the melt solid-liquid interface. By comparing the first diameter and the third diameter, if the difference between the first diameter and the third diameter exceeds a set threshold, the setting parameters of the second measurement module are calibrated; or if the difference does not exceed the set threshold, the calibration value of the setting parameters of the second measurement module is zero.

11. The method according to claim 10, characterized in that, The setting parameters for calibrating the second measurement module based on the first diameter further include: if the difference does not exceed the set threshold, the third diameter is used as the second diameter.

12. The method according to claim 10 or 11, characterized in that, The setting parameters of the second measurement module are calibrated according to the first diameter, including adjusting the deflection angle and / or horizontal distance of the second measurement module relative to the central axis of the single crystal silicon rod.

Images