Photoconversion material and preparation method thereof

Abstract

The present invention discloses a light-conversion material and a method for preparing the same, wherein the light-conversion material comprises: light-conversion hybrid particles, a first coating material coating the light-conversion hybrid particles, and a second coating material formed on the first coating material and coating the light-conversion hybrid particles. The light-conversion hybrid particles comprise a matrix and a plurality of quantum dots uniformly dispersed in the matrix. The first coating material comprises silicon oxide. In the FTIR spectrum of the first coating material, at 939 cm ‑1 Absorbance (A 939 ) and 1000~1150cm ‑1 The peak absorbance (A 1000～1150 ) ratio α (absorbance ratio α: A 939 / A 1000～1150 ) is less than or equal to 0.8.

Description

Technical Field

[0001] The present invention relates to a light conversion material and a preparation method thereof, and in particular to a light conversion material containing quantum dots and a preparation method thereof. Background Art

[0002] Quantum dots (QDs) are nanoscale semiconductor materials, typically formed from a crystalline structure consisting of hundreds to thousands of atoms. They exhibit photoluminescence. Compared to existing organic dye molecules, QDs offer advantages such as higher fluorescence brightness, improved stability, and adjustable fluorescence wavelength.

[0003] Quantum dots are materials with great potential and can be used in a wide range of applications, such as laser components, light sensing components, memory components, solar photovoltaic components, display components, and biological detection components.

[0004] However, quantum dots are easily oxidized under light or in environments containing water and oxygen. This oxidation can lead to problems such as shifting the emission wavelength, widening the half-width of the emission spectrum, and decreasing quantum efficiency.

[0005] Therefore, there is still a need in the art to seek better photoconversion materials and preparation methods thereof that can prevent the quantum dots therein from being oxidized or degraded by moisture, so as to provide photoconversion materials with better optical properties and service life. Summary of the Invention

[0006] Some embodiments of the present invention provide a light-conversion material comprising: light-conversion hybrid particles, a first coating material coating the light-conversion hybrid particles, and a second coating material formed on the first coating material and coating the light-conversion hybrid particles. The light-conversion hybrid particles comprise a matrix and a plurality of quantum dots uniformly dispersed in the matrix. The first coating material comprises silicon oxide. In the Fourier-transform infrared spectroscopy (FTIR) spectrum of the first coating material, at 939 cm -1 Absorbance (A 939 ) and 1000~1150cm -1 The peak absorbance (A 1000～1150 ) ratio α (absorbance ratio α: A 939 / A 1000～1150 ) is less than or equal to 0.8.

[0007] Some embodiments of the present invention provide a method for preparing a photoconversion material, which includes: forming a photoconversion hybrid particle; forming a first coating material on the surface of the photoconversion hybrid particle by an acid-base two-step method; and forming a second coating material on the first coating material by an atomic layer deposition method. The photoconversion hybrid particle includes a matrix and a plurality of quantum dots uniformly dispersed in the matrix. The first coating material includes silicon oxide. In the Fourier-transform infrared spectroscopy (FTIR) spectrum of the first coating material, at 939 cm -1 Absorbance (A 939 ) and 1000~1150cm -1 The peak absorbance (A 1000～1150 ) ratio α (absorbance ratio α: A 939 / A 1000～1150 ) is less than or equal to 0.8.

[0008] Some embodiments of the present invention provide a display device including the aforementioned light conversion material.

[0009] Some embodiments of the present invention provide a lighting device including the aforementioned light conversion material.

[0010] To make the features and advantages of the embodiments of the present invention more apparent and understandable, the present invention is described in detail below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Exemplary embodiments of the present invention are described in detail below with reference to the accompanying drawings, in which:

[0012] Figure 1 Schematic diagram of light conversion materials according to some embodiments of the present invention;

[0013] Figure 2 Schematic diagrams of light conversion materials according to other embodiments of the present invention;

[0014] Figure 3 Schematic diagrams of light conversion materials according to other embodiments of the present invention;

[0015] Figure 4 Schematic diagrams of light conversion materials according to other embodiments of the present invention;

[0016] Figure 5 is a flow chart of a method for preparing a light-conversion material according to some embodiments of the present invention;

[0017] Figure 6FTIR spectra of light conversion materials of some embodiments of the present invention and comparative examples.

[0018] Explanation of symbols

[0019] 1,2,3,4: Photoconversion materials

[0020] 5: Method

[0021] 10,20,30,40: light conversion mixed particles

[0022] 101,201,301,401:Quantum dots

[0023] 103,203,303,403: Matrix

[0024] 205,405: Diffusion particles

[0025] 12, 22, 32, 42: first coating material

[0026] 14, 24, 34, 44: Second coating material

[0027] S501, S503, S505: Steps DETAILED DESCRIPTION

[0028] The following is a detailed description of the components of some embodiments of the present invention. It should be understood that the following description provides many different embodiments or examples for implementing different modes of some embodiments of the present invention. The specific components and arrangements described below are only for a simple and clear description of some embodiments of the present invention. Of course, these are only for illustrative purposes and are not limitations of the present invention. In addition, repeated numbers or markings may be used in different embodiments. These repetitions are only for a simple and clear description of some embodiments of the present invention and do not represent any correlation between the different embodiments and / or structures discussed. Furthermore, when a first material layer is mentioned as being on or above a second material layer, this includes a situation where the first material layer is in direct contact with the second material layer. Alternatively, there may be a situation where there are one or more other material layers in between, in which case the first material layer and the second material layer may not be in direct contact.

[0029] Here, the terms "about," "approximately," and "substantially" generally mean within 20% of a given value or range, preferably within 10%, and more preferably within 5%, or within 3%, or within 2%, or within 1%, or within 0.5%. The quantities given here are approximate quantities, that is, even without the specific description of "about," "approximately," or "substantially," the meaning of "about," "approximately," or "substantially" may still be implied. Here, the term "less than or equal to" means that values ​​below a given value are included, and the term "greater than or equal to" means that values ​​above a given value are included. Conversely, the term "less than" means that values ​​less than a given value are included but not including the given value, and the term "greater than" means that values ​​exceeding a given value are included but not including the given value. For example, "greater than or equal to a" means that values ​​above a are included, and "greater than a" means that values ​​exceeding a are included but not including a.

[0030] It should be understood that although the terms "first," "second," "third," etc. may be used herein to describe various components, constituents, regions, layers, and / or portions, these components, constituents, regions, layers, and / or portions should not be limited by these terms, and these terms are merely used to distinguish different components, constituents, regions, layers, and / or portions. Thus, a first component, component, region, layer, and / or portion discussed below may be referred to as a second component, component, region, layer, and / or portion without departing from the teachings of some embodiments of the present invention.

[0031] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meanings as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the relevant art and the present invention, and should not be interpreted in an idealized or overly formal manner unless specifically defined in the embodiments of the present invention.

[0032] Some embodiments of the present invention may be combined with the Figure 1 It is understood that the drawings illustrating the embodiments of the present invention are also considered part of the description of the embodiments of the present invention. It should be understood that the drawings illustrating the embodiments of the present invention are not drawn to scale with actual devices and components. The shapes and thicknesses of the embodiments may be exaggerated in the drawings to clearly illustrate the features of the embodiments of the present invention. Furthermore, the structures and devices in the drawings are illustrated schematically to clearly illustrate the features of the embodiments of the present invention.

[0033] In some embodiments of the present invention, relative terms such as "lower", "upper", "horizontal", "vertical", "below", "above", "top", "bottom", etc. should be understood as referring to the orientations depicted in the paragraph and related drawings. Such relative terms are only for the convenience of explanation and do not imply that the device described therein must be manufactured or operated in a specific orientation. Terms related to joining and connection, such as "connect", "interconnect", etc., unless otherwise defined, may refer to two structures being in direct contact, or may refer to two structures not being in direct contact, with another structure being located between the two structures. Furthermore, such terms related to joining and connection may also include situations where both structures are movable or both structures are fixed.

[0034] Some embodiments of the present invention provide a light-conversion material comprising light-conversion hybrid particles, a first coating material coating the light-conversion hybrid particles, and a second coating material formed on the first coating material and coating the light-conversion hybrid particles. The light-conversion hybrid particles comprise a matrix and a plurality of quantum dots uniformly dispersed in the matrix. The first coating material comprises silicon oxide, and in the FTIR spectrum of the first coating material, at 939 cm -1 Absorbance (A 939 ) and 1000~1150cm -1 The peak absorbance (A 1000～1150 ) ratio α (absorbance ratio α: A 939 / A 1000～1150 ) is less than or equal to 0.8.

[0035] The above-mentioned light conversion material will be described in detail below with reference to the accompanying drawings. Figure 1 Schematic diagrams of light conversion materials 1 according to some embodiments of the present invention are shown. Figure 1 As shown, the photoconversion material 1 includes photoconversion doped particles 10, a first coating material 12 coating the photoconversion doped particles 10, and a second coating material 14 formed on the first coating material 12 and coating the photoconversion doped particles 10 and the first coating material 12. In one embodiment, the particle size of the photoconversion material 1 may be 0.2 to 50 μm. In another embodiment, the particle size of the photoconversion material 1 may be 0.5 to 50 μm, 0.5 to 40 μm, 1 to 45 μm, 5 to 40 μm, 5 to 50 μm, 7.5 μm, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, or 35 μm, but the present invention is not limited thereto. When the particle size of the photoconversion material 1 is greater than 50 μm, the particle size production process is difficult to operate. When the particle size of the photoconversion material 1 is less than 0.2 μm, the photoconversion material does not provide sufficient protection for the coated photoconversion doped particles 10.

[0036] like Figure 1As shown, the light-conversion dopant particle 10 may include a matrix 103 and a plurality of quantum dots 101 uniformly dispersed within the matrix 103. In one embodiment, the particle size of the light-conversion dopant particle 10 may be approximately 0.1 to 40 μm. In another embodiment, the particle size of the light-conversion dopant particle 10 may be approximately 0.2 to 38 μm, 0.5 to 35 μm, 1 to 32 μm, 2 to 30 μm, 5 to 25 μm, 7.5 μm, 10 μm, 12.5 μm, 15 μm, 20 μm, 25 μm, or 32.5 μm, but the present invention is not limited thereto. Based on 100 wt% of the total weight of the light-conversion dopant particle 10, the matrix 103 may account for approximately 30 to 60 wt% and the quantum dots 101 may account for approximately 5 to 50 wt%. In another embodiment, the matrix 103 may comprise approximately 30-60 wt% and the quantum dots 101 may comprise approximately 10-60 wt%, the matrix 103 may comprise approximately 30-60 wt% and the quantum dots 101 may comprise approximately 10-40 wt%, or the matrix 103 may comprise approximately 40-60 wt% and the quantum dots 101 may comprise approximately 20-50 wt%, but the present invention is not limited thereto. When the proportion of quantum dots 101 in the light-conversion dopant particle 10 is too low, the light-conversion dopant particle 10 may not achieve the desired color conversion color. When the proportion of quantum dots 101 in the light-conversion dopant particle 10 is too high, the light efficiency of the light-conversion dopant particle 10 is poor.

[0037] In one embodiment, the matrix 103 may be a resin comprising a cross-linking monomer. The cross-linking monomer may include an acrylic monomer, an epoxy resin monomer, a silicone resin monomer, or any combination thereof. Examples of the acrylic monomer include, but are not limited to, acrylate monomers, monomethyl maleate, monomethyl itaconate, monomethyl fumarate, styrene, and triallyl isocyanurate (TAIC). Examples of acrylate monomers include, but are not limited to, acrylic acid (AA), glycidyl methacrylate (GMA), methyl acrylate, methyl methacrylate (MMA), ethyl acrylate (EA), isobornyl acrylate (IBOA), isooctyl acrylate, butyl acrylate, butyl methacrylate, ethylhexyl acrylate, 2-hydroxyethyl acrylate (2-HEA), and 1,12-dodecanediol dimethacrylate.

[0038] In one embodiment, the acrylic monomer may be a monomer having two acrylate groups or methacrylate groups, such as dioxane glycol diacrylate, hydroxypivalyl hydroxypivalate diacrylate, 1,6-hexanediol diacrylate, ethoxylated 1,6-hexanediol diacrylate, dipropylene glycol diacrylate, tripropylene glycol diacrylate, tricyclodecanedimethanol diacrylate, polyethylene glycol (200) diacrylate (molecular weight 200), polyethylene glycol (400) diacrylate, and polyethylene glycol (600) diacrylate. glycol (400) diacrylate (molecular weight 400)), polyethylene glycol (600) diacrylate (molecular weight 600)), polyethylene glycol (200) dimethacrylate (molecular weight 200)), polyethylene glycol (400) dimethacrylate (molecular weight 400)), 2-hydroxyethylmetharcrylate phosphate, neopentyl glycol diacrylate, propoxylated neopentyl glycol diacrylate, ethoxylated bisphenol-A diacrylate, ethoxylated bisphenol-A dimethacrylate, 2-methyl-1,2-methyl-1,3-propanediol diacrylate, ethoxylated 2-methyl-1,3-propanediol diacrylate, 2-butyl-2-ethyl-1,3-propanediol diacrylate, ethylene glycol dimethacrylate (EGDMA), triethylene glycol dimethacrylate, diethylene glycol dimethacrylate, 1,4-butanediol diacrylate, 1,6-hexanediol dimethacrylate, allylated cyclohexyl dimethacrylate, or a combination of the foregoing.

[0039] According to an embodiment of the present invention, the monomer may be a monomer having three or more acrylate groups or methacrylate groups, for example, tris(2-hydroxy ethyl)isocyanurate triacrylate, pentaerythritol triacrylate, ethoxylatedtrimethylolpropane triacrylate, ethoxylatedtrimethylolpropane trimethacrylate, propoxylatedtrimethylolpropane triacrylate, trimethylolpropanetrimethacrylate, trimethylolpropane triacrylate, pentaerythritol triacrylate, ethoxylated pentaerythritol triacrylate, propoxylatedglycerol triacrylate, or the like. triacrylate), propoxylated pentaerythritoltriacrylate, pentaerythritoltetraacrylate, ethoxylated pentaerythritoltetraacrylate, propoxylated pentaerythritoltetraacrylate, trimethylolpropanetetraacrylate, or dipentaerythritolhexaacrylate, but the present invention is not limited thereto.

[0040] In one embodiment, examples of epoxy resin monomers may include, but are not limited to, bisphenol A epoxy resin monomers, bisphenol F epoxy resin monomers, bisphenol AD ​​epoxy resin monomers, hydrogenated bisphenol A epoxy resin monomers, hydrogenated bisphenol AD ​​epoxy resin monomers, and naphthalene epoxy resin monomers. Examples of silicone monomers may include, but are not limited to, 3-(methacryloyloxypropyl)-tris(trimethylsiloxy)silane (TRIS), dimethyl-terminated dimethylsiloxane, dimethylvinyl silica, dimethyl silicone oil, and methyl hydrogen silicone oil. In one embodiment, the crosslinking monomer may include an acrylic monomer, an epoxy resin monomer, a silicone monomer, or any combination thereof.

[0041] The quantum dot 101 may be made of any suitable material. In one embodiment, the quantum dot 101 may be made of an inorganic conductive material or an inorganic semiconductor material. Examples of inorganic semiconductor materials may include, but are not limited to, semiconductor materials of Groups II-VI, III-V, IV-VI, and IV. Specific examples include, but are not limited to, Si, Ge, Sn, Se, Te, B, C (including diamond), P, BN, BP, BAs, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdSeZn, CdTe, HgS, HgSe, HgTe, BeS, BeSe, BeTe, MgS, MgSe, GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbO, PbS, PbSe, PbTe, CuF, CuCl, CuBr, CuI, CuInS, CuInSe, and CdZnSSe. Quantum dots composed of the above materials can be used alone or in combination. In one embodiment, quantum dot 101 comprises CdSe, CdTe, CdS, ZnSe, CdTe, CuInS, InP, CuInSe, CdZnSSe, or any combination thereof. In one embodiment, quantum dot 101 comprises CdSe. In one embodiment, quantum dot 101 has a core-shell structure.

[0042] In some embodiments, the surface of the quantum dot may be modified with a ligand. The ligand formed on the surface of the quantum dot 101 may include a ligand that can be cross-linked with the cross-linking monomer of the matrix 103. In one embodiment, the ligand may include one or more cross-linkable functional groups and a thiol group, an amine group and / or a carboxylic acid group. In one embodiment, the ligand is an acrylic monomer, an epoxy resin monomer, a silane monomer, a silicone monomer, or a combination thereof or any combination thereof that includes a thiol group, an amine group and / or a carboxylic acid group and has one or more cross-linkable functional groups. Examples of acrylic monomers herein may include, but are not limited to, acrylate monomers, monomethyl maleate, monomethyl itaconate, monomethyl fumarate, styrene, and triallyl isocyanurate (TAIC). Examples of acrylate monomers include, but are not limited to, acrylic acid (AA), glycidyl methacrylate (GMA), methyl acrylate, methyl methacrylate (MMA), ethyl acrylate (EA), isobornyl acrylate (IBOA), isooctyl acrylate, butyl acrylate, butyl methacrylate, ethylhexyl acrylate, 2-hydroxyethyl acrylate (2-HEA), and 1,12-dodecanediol dimethacrylate. In one embodiment, the ligand may be represented by the following chemical formula (I).

[0043] XR 1 -R 2 Chemical formula (I)

[0044] In the chemical formula (I), X represents a thiol group (-SH), an amine group (-NH2) and / or a carboxylic acid group (-COOH); R 1 represents substituted or unsubstituted C 1-20 Alkylene; R 2 represents a cross-linkable functional group. Examples of cross-linkable functional groups include, but are not limited to, vinyl, allyl, siloxane, and epoxy groups. In one embodiment, R 1 It may represent a substituted C in which at least one substituent is a cross-linkable functional group. 1-20 Alkylene.

[0045] The unsubstituted C 1-20 Alkyl refers to a linear or branched aliphatic hydrocarbon monovalent group having 1 to 20 carbon atoms in the main carbon chain, and non-limiting examples thereof include, but are not limited to, methyl, ethyl, propyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, and hexyl. 1-20 Alkylene refers to a compound having a C1-20 A divalent group with the same structure as an alkyl group. 1-20 Non-limiting examples of alkylene groups include, but are not limited to, methylene, ethylene, propylene, isobutylene, sec-butylene, tert-butylene, pentylene, isopentylene, and hexylene.

[0046] The substituted C 1-20 Alkyl refers to an unsubstituted C 1-20 At least one hydrogen in the alkyl group is replaced by a substituent. 1-20 Alkylene refers to an unsubstituted C 1-20 A group in which at least one hydrogen in an alkylene group is replaced by a substituent. The substituent may be a substituted or unsubstituted C 1-20 an alkyl group, a cross-linkable functional group, or any combination thereof.

[0047] The light-conversion hybrid particles 10 of the present invention are formed by cross-linking ligands formed on the surface of quantum dots 101 with cross-linking monomers of the matrix 103, followed by a granulation process. Therefore, the light-conversion hybrid particles 10 of the present invention exhibit properties such as high cross-linking, high temperature resistance, and acid and alkali resistance, and further block water and / or oxygen from contacting the quantum dots 101, thereby enhancing the stability of the quantum dots 101. Furthermore, during the subsequent process of forming the first coating material 12, the light-conversion hybrid particles 10 of the present invention prevent the ligands modified on the surface of the quantum dots 101 from falling off due to catalysts, water, or an acidic environment, thereby protecting the quantum dot surface from damage and maintaining the quantum efficiency and luminous efficiency of the quantum dots.

[0048] The first coating material 12 includes silicon oxide. In some embodiments, the first coating layer can be formed on the light conversion hybrid particle 10 in a layered structure and coat the entire light conversion hybrid particle 10, such as Figure 1 As shown. In one embodiment, the first coating material 12 may be a silicon oxide (SiO2) layer formed on the photoconversion doped particles 10 by an acid-base two-step method. Specifically, the first coating material 12 can be formed by first generating a silicon oxide sol that tends to grow into a linear chain structure on the photoconversion doped particles 10 under acidic catalytic conditions; then adding an alkaline compound and making the pH value of the solution greater than 7, so that the silicon oxide sol tends to grow in a granular form. In an alkaline environment, the granular growth structure will interact with the existing linear chain structure, thereby changing the nanostructure of the silicon oxide sol, thereby forming a highly dense silicon oxide layer on the photoconversion doped particles 10. In the FTIR spectrum of the silicon oxide layer as the first coating material 12, at 939cm -1 Absorbance (A 939 ) and 1000~1150cm -1 The peak absorbance (A1000～1150 ) ratio α (absorbance ratio α: A 939 / A 1000～1150 ) can be less than or equal to 0.8.

[0049] In one embodiment, the thickness of the first coating material 12 having a layered structure may be approximately 20 to 2000 nm. In another embodiment, the thickness of the first coating material 12 having a layered structure may be approximately 50 to 1500 nm, 50 to 1000 nm, 100 to 1000 nm, 150 to 1750 nm, 150 to 900 nm, 75 nm, 125 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm, 550 nm, 650 nm, 850 nm, 1050 nm, 1250 nm, 1450 nm, 1650 nm, or 1850 nm, but the present invention is not limited thereto. In this embodiment, if the thickness of the first coating material 12 is too thin, for example, less than 50 nm, the first coating material 12 may not effectively prevent the quantum dots 101 in the light-converting doped particles 10 from being degraded by water and / or gas. If the thickness of the first coating material 12 is too thick, for example, greater than 2000 nm, the quantum efficiency of the light conversion material 1 may be reduced.

[0050] The second cladding material 14 includes a metal oxide. In some embodiments, the second cladding material 14 can be formed in a layered structure on the first cladding material 12 and clad the light conversion hybrid particles 10 and the first cladding material 12, such as Figure 1 As shown. In one embodiment, the second coating material 14 may be a metal oxide layer formed on the light conversion hybrid particle 10 by atomic layer deposition. The metal oxide layer formed by atomic layer deposition may have the advantages of being thin and dense. Examples of metal oxide layers may include, but are not limited to, aluminum oxide (Al2O3) layers. In one embodiment, the thickness of the second coating material 14 having a layered structure may be approximately 5 to 50 nm. In another embodiment, the thickness of the second coating material 14 may be approximately 5 to 45 nm, 5 to 40 nm, 10 to 40 nm, or 10 to 30 nm, but the present invention is not limited thereto. If the thickness of the second coating material 14 is too thin, for example, less than 5 nm, the second coating material 14 may not effectively prevent the quantum dots 101 in the light conversion hybrid particle 10 from being affected by water and / or gas and deteriorating. If the thickness of the second coating material 14 is too thick, for example, greater than 50 nm, the quantum efficiency of the light conversion material 1 may be reduced.

[0051] In some embodiments, a stacked layer structure covering the second cladding material 14 may be further formed on the second cladding material 14 of the photoconversion material 1. The stacked layer structure may fill Figure 1The surface defects of the photoconversion material 1 shown are shown, thereby further improving the water and oxygen resistance of the photoconversion material. The stacked layer structure includes multiple layers of a first coating material and a second coating material stacked alternately with each other. The thickness of the first coating material in the stacked layer structure can be approximately 10-100 nm, 10-90 nm, 10-80 nm, 10-70 nm, 10-60 nm, 10-50 nm, 10-40 nm, 10-30 nm, 15-100 nm, 15-90 nm, 15-80 nm, 15-70 nm, 15-60 nm, 15-50 nm, 15-40 nm, 15-30 nm, but the present invention is not limited thereto. The thickness of the second coating material in the stacked layer structure can be approximately 5-20 nm, 5-15 nm, 5-10 nm, 5-9 nm, 5-8 nm, 6-20 nm, 6-15 nm, 6-10 nm, but the present invention is not limited thereto. In some embodiments, the stacked layer structure includes three or fewer layers of the first cladding material and three or fewer layers of the second cladding material. If the stacked layer structure has more than three layers of the first cladding material or the second cladding material, the transmittance of the photoconversion material will be reduced and the manufacturing cost of the photoconversion material will be increased.

[0052] Figure 2 Schematic diagrams of photoconversion materials 2 according to other embodiments of the present invention are shown. Similar to photoconversion material 1, photoconversion material 2 includes photoconversion doping particles 20, a first cladding material 22 that encapsulates the photoconversion doping particles 20, and a second cladding material 24 formed on the first cladding material 22 and encapsulating the photoconversion doping particles 20 and the first cladding material 22. The first cladding material 22 and the second cladding material 24 in photoconversion material 2 are identical to the first cladding material 12 and the second cladding material 14 in photoconversion material 1. Photoconversion material 2 differs from photoconversion material 1 in that its photoconversion doping particles 20 further include diffusion particles 205. Therefore, the following detailed description will only focus on the photoconversion doping particles 20 of photoconversion material 2, and will not further describe the first cladding material 22 and the second cladding material 24 of photoconversion material 2.

[0053] like Figure 2As shown, the light conversion doping particles 20 may include a matrix 203, a plurality of quantum dots 201 uniformly dispersed in the matrix 203, and diffusion particles 205. In one embodiment, the particle size of the light conversion doping particles 20 may be approximately 0.1 to 40 μm. In another embodiment, the particle size of the light conversion doping particles 20 may be approximately 0.2 to 38 μm, 0.5 to 35 μm, 1 to 32 μm, 2 to 30 μm, 5 to 25 μm, 7.5 μm, 10 μm, 12.5 μm, 15 μm, 20 μm, 25 μm, or 32.5 μm, but the present invention is not limited thereto. When the particle size of the light conversion doping particles 20 exceeds 40 μm, the light extraction efficiency of the light conversion doping particles 20 decreases, and it is easy to cause uneven light spots on the light-emitting surface of the light-emitting component containing the light conversion doping particles 20, resulting in visible uneven brightness lines or spots. Based on 100 wt% of the total weight of the light-conversion dopant particle 20, the matrix 203 may account for approximately 30-89 wt%, the quantum dots 201 may account for approximately 5-50 wt%, and the diffusing particles 205 may account for approximately 0.5-20 wt%. In another embodiment, the matrix 203 may account for approximately 30-80 wt%, the quantum dots 201 may account for approximately 15-50 wt%, and the diffusing particles 205 may account for approximately 1-15 wt%. In another embodiment, the matrix 203 may account for approximately 30-70 wt%, the quantum dots 201 may account for approximately 20-50 wt%, and the diffusing particles 205 may account for approximately 1-10 wt%. In another embodiment, the matrix 203 may account for approximately 30-60 wt%, the quantum dots 201 may account for approximately 10-40 wt%, and the diffusing particles 205 may account for approximately 1-10 wt%. If the proportion of quantum dots 201 in the light-conversion dopant particle 20 is too low, the light-conversion dopant particle 20 may fail to achieve the desired color conversion color. When the proportion of quantum dots 201 in the light-conversion doping particles 20 is too high, the quantum dots 201 may experience self-absorption, leading to an increase in the amount of quantum dots 201 used. When the proportion of matrix 203 in the light-conversion doping particles 20 is too low, the matrix 203 is insufficiently cross-linked, resulting in poor protection of the quantum dots 201 by the light-conversion doping particles 20. When the proportion of matrix 203 in the light-conversion doping particles 20 is too high, the proportion of quantum dots 203 is reduced, and the light-conversion doping particles 20 may not achieve the desired color conversion color.

[0054] Matrix 203 may be a resin containing a cross-linking monomer. The materials that may be used to form matrix 203 are the same as those that may be used to form matrix 103, and therefore are not further described herein. Quantum dot 201 may be made of any suitable material. The materials that may be used to form quantum dot 201 are the same as those that may be used to form quantum dot 101, and therefore are not further described herein. The ligands formed on the surface of quantum dot 201 may include ligands that can cross-link with the cross-linking monomers of matrix 203. Similarly, depending on the material of matrix 203, the ligands that may be formed on the surface of quantum dot 201 are the same as those that may be formed on the surface of quantum dot 101, and therefore are not further described herein.

[0055] The diffusion particles 205 may comprise metal oxide, silicon oxide, or any combination thereof. Examples of metal oxides in the diffusion particles 205 may include, but are not limited to, titanium oxide and zirconium oxide. In one embodiment, the particle size of the diffusion particles 205 may be approximately 10 to 500 nm. In another embodiment, the particle size of the diffusion particles 205 may be approximately 10 to 450 nm, 10 to 400 nm, 15 to 350 nm, 15 to 300 nm, 20 to 250 nm, 25 to 250 nm, 20 to 200 nm, or 25 to 250 nm, but the present invention is not limited thereto. When the particle size of the diffusion particles 205 is less than or equal to 500 nm, the diffusion efficiency of the diffusion particles 205 in the visible light range is optimal. When the particle size of the diffusion particles 205 is less than 10 nm, the diffusion particles 205 have essentially no light diffusion capability. When the particle size of the diffusion particles 205 exceeds 500 nm, the diffusion particles 205 may cause a light blocking effect, reducing the light output efficiency of the light conversion doping particles 20. By further including the diffusion particles 205 and the light conversion material 2, the light conversion doping particles 20 can have better optical properties.

[0056] The photoconversion doped particles 20 of the photoconversion material 2 are also formed by crosslinking the ligands formed on the surface of the quantum dots 201 with the crosslinking monomers of the matrix 203, followed by a granulation process. Similar to the photoconversion doped particles 10 of the photoconversion material 1, the photoconversion doped particles 20 of the photoconversion material 2 also exhibit properties such as high crosslinking, high temperature resistance, and acid and alkali resistance. They further block water and / or oxygen from contacting the quantum dots 201, thereby enhancing the stability of the quantum dots 201. Similarly, in some embodiments, a stacked layer structure may be formed on the second coating material 24 of the photoconversion material 2, coating the second coating material 24. The materials and structure of the stacked layer structure are described above and are not further described here.

[0057] Figure 3Schematic diagrams of light-conversion materials 3 according to other embodiments of the present invention are shown. The light-conversion material 3 includes light-conversion doping particles 30, a first coating material 32 coating the light-conversion doping particles 30, and a second coating material 34 formed on the first coating material 32 and coating the light-conversion doping particles 30 and the first coating material 32. Similarly, in some embodiments, a stacked layer structure coating the second coating material 34 may be further formed on the second coating material 34 of the light-conversion material 3. The light-conversion doping particles 30 may include a matrix 303 and a plurality of quantum dots 301 uniformly dispersed in the matrix 303. In this embodiment, a plurality of light-conversion doping particles 30 may be coated in the first coating material 32, and a spherical coating structure is formed with the light-conversion doping particles 30. The light-conversion doping particles 30 are uniformly distributed in the spherical coating structure. The particle size of the light-conversion doping particles 30 may be approximately 0.1 to 5 μm. In another embodiment, the particle size of the light-conversion dopant particles 30 may be approximately 0.2-4.8 μm, 0.3-4.5 μm, 0.5-5 μm, 1-5 μm, 1.5-4.5 μm, 1.8-3.8 μm, 2 μm, or 3.6 μm, but the present invention is not limited thereto. The particle size of the spherical coating structure may be approximately 0.1-40 μm, for example, approximately 0.2-38 μm, 0.5-35 μm, 1-32 μm, 2-30 μm, 5-25 μm, 7.5 μm, 10 μm, 12.5 μm, 15 μm, 20 μm, 25 μm, or 32.5 μm, but the present invention is not limited thereto. The second coating material 34 may have a layered structure having a thickness of approximately 5-50 nm and is formed on the spherical coating structure to coat the light-conversion dopant particles 30 and the first coating material 32. In one embodiment, the thickness of the second coating material 34 may be approximately 5 to 50 nm. In another embodiment, the thickness of the second coating material 34 may be approximately 5 to 45 nm, 5 to 40 nm, 10 to 40 nm, or 10 to 30 nm, but the present invention is not limited thereto. Otherwise, the photoconversion material 3 has a similar structure, preparation method, particle size, composition, and stacked layer structure to the photoconversion material 1, so these details of the photoconversion material 3 will not be further described below.

[0058] Figure 4Schematic diagrams of light-conversion materials 4 according to other embodiments of the present invention are shown. The light-conversion material 4 includes light-conversion doping particles 40, a first coating material 42 coating the light-conversion doping particles 40, and a second coating material 44 formed on the first coating material 42 and coating the light-conversion doping particles 40 and the first coating material 42. Similarly, in some embodiments, a stacked layer structure coating the second coating material 44 may be further formed on the second coating material 44 of the light-conversion material 4. The light-conversion doping particles 40 may include a matrix 403, a plurality of quantum dots 401 uniformly dispersed in the matrix 403, and diffusion particles 405. In this embodiment, a plurality of light-conversion doping particles 40 may be coated in the first coating material 42, and a spherical coating structure is formed with the light-conversion doping particles 40. The light-conversion doping particles 40 are uniformly distributed in the spherical coating structure. The particle size of the light-conversion doping particles 40 may be approximately 0.1 to 5 μm. In another embodiment, the particle size of the light-converting dopant particles 40 may be approximately 0.2-4.8 μm, 0.3-4.5 μm, 0.5-5 μm, 1-5 μm, 1.5-4.5 μm, 1.8-3.8 μm, 2 μm, or 3.6 μm, but the present invention is not limited thereto. The particle size of the spherical coating structure may be approximately 0.1-40 μm, for example, approximately 0.2-38 μm, 0.5-35 μm, 1-32 μm, 2-30 μm, 5-25 μm, 7.5 μm, 10 μm, 12.5 μm, 15 μm, 20 μm, 25 μm, or 32.5 μm, but the present invention is not limited thereto. The second coating material 44 may have a layered structure with a thickness of approximately 5-50 nm and is formed on the spherical coating structure to coat the light-converting dopant particles 40 and the first coating material 42. In one embodiment, the thickness of the second coating material 44 may be approximately 5 to 50 nm. In another embodiment, the thickness of the second coating material 44 may be approximately 5 to 45 nm, 5 to 40 nm, 10 to 40 nm, or 10 to 30 nm, but the present invention is not limited thereto. Otherwise, the photoconversion material 4 has the same structure, preparation method, particle size, composition, and stacked layer structure as the photoconversion material 2, so these details of the photoconversion material 4 will not be further described below.

[0059] The present invention is Figures 1 to 4 The photoconversion materials 1 to 4 are shown as examples, but the photoconversion materials of the present invention are not limited to Figures 1 to 4 The light conversion materials 1 to 4 are shown. For example, in one embodiment, the first coating material of the light conversion material can simultaneously coat the light conversion mixed particles 2 containing diffusion particles and the light conversion mixed particles 1 not containing diffusion particles.

[0060] Some embodiments of the present invention provide a display device including the above-mentioned light conversion material.

[0061] Some embodiments of the present invention provide a lighting device including the above-mentioned light conversion material.

[0062] Some embodiments of the present invention provide methods for preparing the aforementioned light-conversion materials. Figure 5 A flow chart of a method 5 for preparing a light-converting material according to some embodiments of the present invention is shown. Figure 5 As shown, the preparation method 5 of the photoconversion material includes step S501 of forming photoconversion hybrid particles, step S503 of forming a first coating material on the surface of the photoconversion hybrid particles by an acid-base two-step method, and step S505 of forming a second coating material on the first coating material by an atomic layer deposition method.

[0063] In step S501, a ligand capable of cross-linking with a cross-linking monomer is first selected based on the cross-linking monomer of the matrix. The ligand is then modified onto quantum dots to obtain modified quantum dots. The modified quantum dots, the matrix, and an initiator are thoroughly mixed to obtain a photoconversion material mixture. The photoconversion material mixture is then irradiated with light or heated to cross-link the quantum dots and the matrix. After the cross-linking reaction, the resulting product is centrifuged and washed with a solvent to obtain the photoconversion hybrid particles of the present invention. In one embodiment, the photoconversion material mixture may further include diffusing particles.

[0064] Then, in step S503, a silicon oxide layer with a thickness of 50 to 2000 nm is formed on the light conversion mixed particle obtained in step S501 by a two-step acid-base method. Step S503 can be repeated multiple times until a silicon oxide layer with the desired thickness is formed. The silicon oxide layer serves as the first coating material to coat the entire light conversion mixed particle. FTIR analysis of this first coating material reveals that in the FTIR spectrum of the first coating material, at wave number 939 cm -1 Absorbance (A 939 ) and wave numbers 1000~1150cm -1 The peak absorbance (A 1000～1150 ) ratio α (absorbance ratio α: A 939 / A 1000～1150 ) is less than or equal to 0.8.

[0065] Finally, in step S505, a metal oxide layer with a thickness of 5 to 50 nm is formed on the first coating material by atomic layer deposition to complete the preparation of the light conversion material. Step S505 can be repeated multiple times until a metal oxide layer with the desired thickness is formed. The metal oxide layer formed by atomic layer deposition has the characteristics of being thin and dense, so it can provide water and / or oxygen resistance while maintaining the light extraction efficiency of the light conversion mixed particles. The final light conversion material can have the characteristics as described above. Figures 1 to 4The structure shown in FIG. 1 is not limited thereto. For example, step S503 and / or step S505 may be repeated multiple times to form a stacked layer structure covering the second coating material. In one embodiment, step S503 and / or step S505 may be repeated no more than three times, and may be repeated once, twice, or three times, for example.

[0066] The following specific examples and comparative examples are provided to further illustrate the advantages of the light-conversion material of the present invention.

[0067] Synthesis of quantum dots

[0068] Quantum dot synthesis example 1:

[0069] 0.9 g of indium (III) chloride, 2.2 g of zinc (II) chloride, and 30 mL of oleylamine were added to a 150 mL three-necked flask to form a mixture. The mixture was heated to 120°C under vacuum and maintained for 1 hour, then nitrogen was introduced and heated to 180°C and maintained for 10 minutes. 4.5 g of tris(diethylamine)phosphine was added and reacted for 8 minutes. Then, 10 g of dodecanethiol was added and heated to 260°C and maintained for 5 hours. The mixture was cooled to 180°C and added with 2 g of 2-ethylhexanoic acid. After heating for 1 hour, the temperature was lowered to room temperature to obtain a reaction solution. The reaction solution, toluene, and 95% ethanol were added to a centrifuge tube and repeatedly centrifuged at 6000 rpm for 10 minutes. Finally, the toluene and 95% ethanol were removed by vacuum concentration to obtain quantum dot powder 1 having an indium phosphide-zinc sulfide core-shell structure.

[0070] Quantum dot synthesis example 2:

[0071] 12 mmol of zinc acetate (Zn(CH3COO)2), 0.864 mol of cadmium oxide (CdO), and 47.5 mol of octadecylphosphonic acid were mixed to obtain a mixture. The mixture was heated to 120-160°C to obtain a mixed solution. 20 mL of tri-n-octylphosphine solution was added to the mixed solution, and the mixture was heated to 250-270°C. When the temperature was reached, 6 mL of tri-n-octylphosphine solution, 10.68 mmol of sulfur, and 0.3 mmol of selenium were quickly added. After reacting for 10 minutes, the mixture was cooled naturally to obtain cadmium selenide (CdSe@ZnS) quantum dots. The CdSe quantum dots were washed with toluene. 95% ethanol was added to precipitate the CdSe quantum dots, and the supernatant was then removed. The CdSe quantum dots were dispersed in toluene and then 95% ethanol was added. The mixture was centrifuged and washed three times repeatedly. After drying, cadmium selenide-zinc sulfide core-shell structure quantum dot powder 2 was obtained.

[0072] Preparation of photoconversion materials

[0073] Example 1

[0074] 1. Preparation of light-conversion hybrid particles

[0075] Quantum dot powder 1, isobornyl acrylate (IBOA), and 2,4,6-trimethylbenzoyldiphenylphosphine oxide (Lucirin TPO, manufactured and sold by BASF) were mixed uniformly at a weight ratio of 30:69:1 (quantum dot powder 1:IBOA:2,4,6-trimethylbenzoyldiphenylphosphine oxide). A cetyltrimethylammonium bromide (CTAB) aqueous solution (water:CTAB weight ratio of 20:0.5) was added dropwise to this mixed solution under rapid stirring. Simultaneously, the mixed solution was irradiated with 365nm UV LED light to induce a cross-linking reaction during stirring. Finally, the reaction product was washed with 95% ethanol by centrifugation to complete the preparation of the photoconversion hybrid particles.

[0076] 2. Forming the first coating material

[0077] Disperse 0.5g of the above-mentioned photoconversion hybrid particles in 20g of water, 5g of 95% ethanol, and 5g of tetraethoxysilane reactant to form a mixed solution. Adjust the pH value of the mixed solution to 5-5.5 with hydrochloric acid (HCl) and stir rapidly at 40°C for 2 hours. Adjust the pH to 11-11.5 with sodium hydroxide (NaOH) and react at 60°C for 12 hours. Then, heat to 90°C and react for 1 hour. After cooling, wash with 95% ethanol by centrifugation and dry in an oven at 120°C for 1 hour to obtain photoconversion hybrid particles coated with a silicon oxide layer.

[0078] 3. Forming the second coating material

[0079] The photoconversion hybrid particles coated with a silicon oxide layer are placed in the chamber of an atomic layer deposition (ALD) device. The chamber is evacuated and heated to 80°C. Trimethylaluminum gas is loaded by nitrogen, so that the trimethylaluminum gas is adsorbed on the photoconversion hybrid particles coated with a silicon oxide layer. Nitrogen (N2) is introduced to remove excess trimethylaluminum and by-products. Water vapor is introduced into the chamber by nitrogen loading, so that the water vapor reacts with the surface adsorption of the first precursor (trimethylaluminum), and then nitrogen is introduced again to remove excess water vapor and by-products. The above cycle is repeated 50 times to obtain 5nm Al2O3 as the second coating material, thereby completing the preparation of the photoconversion material.

[0080] Example 2

[0081] A light conversion material was obtained in the same manner as in Example 1, except that in the step of forming the second cladding material, 100 cycles were repeated to form 10 nm of Al 2 O 3 .

[0082] Example 3

[0083] A light conversion material was obtained in the same manner as in Example 1, except that in the step of forming the second cladding material, 300 cycles were repeated to form 30 nm of Al 2 O 3 .

[0084] Example 4

[0085] A light conversion material was obtained in the same manner as in Example 2, except that the light conversion mixed particles were dispersed in 20 g of water, 5 g of 95% ethanol, and 10 g of tetraethoxysilane reactant to form a mixed solution.

[0086] Example 5

[0087] A light conversion material was obtained in the same manner as in Example 3, except that the quantum dot powder 1 was replaced with the quantum dot powder 2.

[0088] Example 6

[0089] A photoconversion material was obtained in the same manner as in Example 1, except that IBOA was replaced with a monomer mixture of IBOA and 1,12-dodecanediol dimethacrylate (1,12-DODECA) in a weight ratio of 1:1.

[0090] Example 7

[0091] 1. Preparation of Diffusion Particles

[0092] 2g of titanium oxide (product number TO-020, purchased from DOITTECHNICAL CO., LIMITED) and 10g of 3-(trimethoxysilyl)propyl methacrylate (MSMA) were mixed in 95% ethanol and rapidly stirred. 0.5g of 0.1M NaOH was added and stirred for 3 hours. The mixture was then washed by centrifugation with 95% ethanol to obtain modified titanium oxide particles.

[0093] 2. Preparation of Photoconversion Hybrid Particles

[0094] Quantum dot powder 1, the titanium oxide modified particles, methyl methacrylate (MMA), 1,12-dodecanediol dimethacrylate, and 2,4,6-trimethylbenzoyldiphenylphosphine oxide (Lucirin TPO, manufactured and sold by BASF) were mixed uniformly in a weight ratio of 15:20:40:23:2 (quantum dot powder 1:titanium oxide modified particles:MMA:1,12-dodecanediol dimethacrylate:2,4,6-trimethylbenzoyldiphenylphosphine oxide). A mixed solution was then added dropwise with rapid stirring to a hexadecyltrimethylammonium bromide (CTAB) aqueous solution (water:CTAB weight ratio of 20:0.5). The mixed solution was then irradiated with 365nm UV LED light to induce a crosslinking reaction during stirring. The reaction product was then washed with 95% ethanol by centrifugation to complete the preparation of the photoconversion hybrid particles.

[0095] 2. Forming the first coating material

[0096] 2g of the above-mentioned photoconversion hybrid particles are dispersed in 20g of water, 5g of 95% ethanol, and 5g of tetraethoxysilane reactant to form a mixed solution. The pH of the mixed solution is adjusted to 5-5.5 with hydrochloric acid (HCl), and then rapidly stirred at 40°C for 2 hours. The pH is adjusted to 11-11.5 with sodium hydroxide (NaOH), and then reacted at 60°C for 12 hours, followed by heating to 90°C for 1 hour. After cooling, the solution is centrifuged with 95% ethanol and dried in an oven at 120°C for 1 hour to obtain photoconversion hybrid particles coated with a silicon oxide layer.

[0097] 3. Forming the second coating material

[0098] The photoconversion hybrid particles coated with a silicon oxide layer are placed in the chamber of an atomic layer deposition (ALD) device. The chamber is evacuated and heated to 80°C. Trimethylaluminum gas is loaded by nitrogen, so that the trimethylaluminum gas is adsorbed on the photoconversion hybrid particles coated with a silicon oxide layer. Nitrogen (N2) is introduced to remove excess trimethylaluminum and by-products. Water vapor is introduced into the chamber by nitrogen loading, so that the water vapor reacts with the surface adsorption of the first precursor, and then nitrogen is introduced again to remove excess water vapor and by-products. The above cycle is repeated 300 times to obtain 30nm Al2O3 as the second coating material, thereby completing the preparation of the photoconversion material.

[0099] Comparative Example 1

[0100] 50 mg of quantum dot powder 2 was dispersed in 160 mL of cyclohexane and 20 mL of nonylphenol polyethoxy alcohol ( CO 520) and ammonia water. After reacting at 60°C for 12 hours, methanol was added to break the emulsion, and the mixture was centrifuged and washed to obtain a light conversion material.

[0101] Comparative Example 2

[0102] Quantum dot powder 2, IBOA, and 2,4,6-trimethylbenzoyldiphenylphosphine oxide (Lucirin TPO, manufactured and sold by BASF) were mixed uniformly at a weight ratio of 30:69:1 (quantum dot powder 2:IBOA:2,4,6-trimethylbenzoyldiphenylphosphine oxide). This mixed solution was then added dropwise to an aqueous solution of cetyltrimethylammonium bromide (CTAB) (water:CTAB weight ratio of 20:0.5) under rapid stirring. Simultaneously, the mixed solution was irradiated with 365nm UV LED light to induce a cross-linking reaction during stirring. Finally, the reaction product was washed with 95% ethanol by centrifugation to complete the preparation of the photoconversion hybrid particles.

[0103] Comparative Example 3

[0104] 50 mg of quantum dot powder 1 was dispersed in 160 mL of cyclohexane and 20 mL of nonylphenol polyethoxy alcohol ( CO 520) and ammonia water. After reacting at 60°C for 12 hours, methanol was added to break the emulsion, and the mixture was centrifuged and washed to obtain a light conversion material.

[0105] Comparative Example 4

[0106] Place 1g of quantum dot powder 2 into the chamber of the ALD device. Evacuate the chamber and heat it to 80°C. Load trimethylaluminum gas with nitrogen so that the trimethylaluminum gas is adsorbed on the surface of the quantum dot powder 2. Introduce nitrogen (N2) to remove excess trimethylaluminum and by-products. Introduce water vapor into the chamber through nitrogen loading, so that the water vapor reacts with the surface adsorption of the first precursor (trimethylaluminum), and then introduce nitrogen again to remove excess water vapor and by-products. Repeat the above cycle 300 times to obtain 30nm of Al2O3 as the second coating material, thereby completing the preparation of the photoconversion material.

[0107] Comparative Example 5

[0108] Disperse 1 g of the photoconversion hybrid particles from Example 1 in 20 g of water, 5 g of 95% ethanol, and 5 g of tetraethoxysilane to form a 20 g mixed solution. Add 5 g of a 0.8 M aqueous NaOH solution to the mixed solution and react at 60°C for 12 hours. Cool and centrifuge to obtain a photoconversion material.

[0109] The structures of the photoconversion materials of Examples 1 to 7 and Comparative Examples 1 to 5 are summarized in Table 1. In Table 1, M-CdSe represents modified CdSe quantum dots, CdSe represents unmodified CdSe quantum dots, M-InP represents modified InP quantum dots, InP represents unmodified InP quantum dots, and SiO2-2x represents silicon with a 2x equivalent weight.

[0110] Table 1

[0111]

[0112]

[0113] The light conversion materials of Examples 1-7 and Comparative Examples 1-5 were mixed with silica gel at a weight ratio of 20:80 to form LEDs. These LEDs were then illuminated at 100 mA for testing. The test results are shown in Table 2 below. Figure 6 FTIR spectra of the first cladding material of the photoconversion materials according to Examples 3 to 5 and Comparative Examples 1, 3, and 5 are shown. Figure 6 In the FTIR spectra of the light conversion materials of Examples 3 to 5 and Comparative Examples 1, 3 and 5 shown, the wavelength of the light conversion materials at 939 cm -1 Absorbance (A 939 ) and wave numbers 1000~1150cm -1 The peak absorbance (A 1000～1150 The ratio of α is shown in Table 2 below. In the FTIR spectrum, the SI-OH bond is at wave number 939 cm -1 Absorption, and Si-O-Si at wave number 1000~1150cm -1 Light absorption. Therefore, a smaller α value indicates a lower Si-OH content in the first coating material, indicating a higher structural density of the first coating material. LED relative intensity @96h and LED relative intensity @216h refer to the percentage of the initial luminous brightness of the LED lit at 100mA after 96 hours and 216 hours, respectively, relative to the initial luminous brightness of the LED lit at 100mA.

[0114] Table 2

[0115] α value Quantum efficiency LED relative intensity @96h LED relative intensity @216h Example 1 - 60％ 65％ 57％ Example 2 - 58％ 83％ 70％ Example 3 0.69 50％ 98％ 93％ Example 4 0.74 48％ 85％ 72％ Example 5 0.65 45％ 80％ 65％ Example 6 - 55％ 87％ 72％ Example 7 - 55％ 99％ 95％ Comparative Example 1 1.13 45％ 60％ 42％ Comparative Example 2 - 47％ 10％ - Comparative Example 3 0.97 40％ 45％ 20％ Comparative Example 4 - 40％ 58％ 38％ Comparative Example 5 0.82 60％ 55％ 36％

[0116] As shown in Table 2, the light-conversion materials according to the present invention have a longer service life than the comparative examples. In particular, the light-conversion material comprising modified CdSe quantum dots and 30nm Al₂O₃ maintained over 90% of its initial brightness even after 216 hours, demonstrating that the light-conversion material of the present invention protects the quantum dots from oxidation and moisture degradation. Therefore, display devices and / or lighting devices incorporating the light-conversion materials of the present invention also have a longer service life.

[0117] Although the embodiments of the present invention and their advantages have been disclosed above, it should be understood that any person skilled in the art may make changes, substitutions and modifications without departing from the spirit and scope of the present invention. In addition, the scope of protection of the present invention is not limited to the manufacturing processes, machines, manufacturing, material compositions, devices, methods and steps in the specific embodiments described in the specification. Any person skilled in the art may understand from the disclosure of some embodiments of the present invention that the manufacturing processes, machines, manufacturing, material compositions, devices, methods and steps currently or in the future are developed, as long as they can implement substantially the same functions or obtain substantially the same results in the embodiments described herein, they can be used according to some embodiments of the present invention. Therefore, the scope of protection of the present invention includes the above-mentioned manufacturing processes, machines, manufacturing, material compositions, devices, methods and steps. In addition, each claim constitutes a separate embodiment, and the scope of protection of the present invention also includes the combination of each claim and embodiment.

Claims

1. A light conversion material comprising: Light conversion hybrid particles, comprising: matrix, and A plurality of quantum dots are uniformly dispersed in the matrix, wherein the matrix accounts for 30 to 60 wt % and the plurality of quantum dots account for 5 to 50 wt % based on 100 wt % of the total weight of the light conversion hybrid particles; A first coating material coating the light-converting hybrid particle; as well as A second coating material is formed on the first coating material and covers the first coating material and has a thickness of 10 to 40 nm; The first coating material includes silicon oxide, and the Fourier transform infrared spectrum of the first coating material has a wavelength of 939 cm -1 Absorbance (A 939 ) and 1000~1150cm -1 The peak absorbance (A 1000～1150 ) ratio α (absorbance ratio α: A 939 / A 1000～1150 ) is greater than or equal to 0.65 and less than or equal to 0.

8. 2 . The photoconversion material as claimed in claim 1 , wherein a ligand is modified on the surface of each of the plurality of quantum dots, the matrix comprises a cross-linking monomer, and the ligand is cross-linked with the cross-linking monomer.

3. The photoconversion material according to claim 2 , wherein the ligand is selected from the group consisting of acrylic monomers, epoxy monomers, silane monomers, silicone monomers, or any combination thereof, each containing a thiol group, an amine group, and / or a carboxylic acid group, and the crosslinking monomer is selected from the group consisting of acrylic monomers, epoxy monomers, silicone monomers, or any combination thereof. The light-converting material as claimed in claim 1 , wherein the second cladding material comprises a metal oxide. The light-conversion material as claimed in claim 1 , wherein the first cladding material has a layered structure, and the second cladding material has a layered structure. 6 . The light-conversion material as claimed in claim 5 , wherein a thickness of the layered structure of the first cladding material is 20-2000 nm. 7 . The light-conversion material as claimed in claim 5 , wherein the particle size of the light-conversion mixed particles is 0.1-40 μm, and the particle size of the light-conversion material is 0.2-50 μm. 8 . The light-conversion material as claimed in claim 1 , wherein the first encapsulating material and the plurality of light-conversion hybrid particles form a spherical encapsulating structure, and the second encapsulating material has a layered structure. 9 . The light-conversion material according to claim 8 , wherein the particle size of the spherical coating structure is 0.1-40 μm. 10 . The light-conversion material as claimed in claim 8 , wherein the particle size of the light-conversion mixed particles is 0.1-5 μm, and the particle size of the light-conversion material is 0.2-50 μm. 11 . The light-converting material as claimed in claim 1 , wherein the light-converting hybrid particles further comprise a plurality of diffusion particles uniformly dispersed in the matrix. 12 . The light conversion material according to claim 11 , wherein the plurality of diffusion particles account for 0.5-20 wt % based on 100 wt % of the total weight of the light conversion mixed particles. 13 . The light-converting material as claimed in claim 1 , wherein the light-converting material further comprises a stacked layer structure formed on and covering the second cladding material. 14 . The light-conversion material as claimed in claim 13 , wherein the stacked layer structure comprises the first cladding material and the second cladding material stacked alternately.

15. A method for preparing a light-conversion material, comprising: forming light-converting hybrid particles; forming a first coating material on the surface of the light-converting hybrid particle by an acid-base two-step method; as well as forming a second cladding material on the first cladding material by atomic layer deposition; The light conversion mixed particles include: matrix; and A plurality of quantum dots are uniformly dispersed in the matrix; The first coating material includes silicon oxide, and the Fourier transform infrared spectrum of the first coating material has a wavelength of 939 cm -1 Absorbance (A 939 ) and wave numbers 1000~1150cm -1 The peak absorbance (A 1000～1150 ) ratio α (absorbance ratio α: A 939 / A 1000～1150 ) is greater than or equal to 0.65 and less than or equal to 0.8, The step of forming the first coating material by the acid-base two-step method includes using a silica sol that tends to grow into a linear chain structure under acidic catalytic conditions and tends to grow into a granular structure under alkaline conditions. 16 . The method for preparing a light-conversion material according to claim 15 , wherein a ligand is modified on the surface of each of the plurality of quantum dots, the matrix comprises a cross-linking monomer, and the ligand is cross-linked with the cross-linking monomer.

17. The method for preparing a photoconversion material according to claim 16, wherein the ligand is selected from the group consisting of acrylic monomers, epoxy monomers, silane monomers, silicone monomers, or any combination thereof, each containing a thiol group, an amine group, and / or a carboxylic acid group, and the crosslinking monomer is selected from the group consisting of acrylic monomers, epoxy monomers, silicone monomers, or any combination thereof. 18 . The method for preparing a light-converting material as claimed in claim 15 , wherein the second coating material comprises a metal oxide. 19 . The method for preparing a light-conversion material as claimed in claim 15 , wherein the first cladding material has a layered structure, and the second cladding material has a layered structure. 20 . The method for preparing a photoconversion material as claimed in claim 19 , wherein the thickness of the layered structure of the first cladding material is 20-2000 nm, and the thickness of the layered structure of the second cladding material is 5-50 nm. 21 . The method for preparing a light-conversion material as claimed in claim 19 , wherein the particle size of the light-conversion mixed particles is 0.1 to 40 μm, and the particle size of the light-conversion material is 0.2 to 50 μm. 22 . The method for preparing a light-conversion material as claimed in claim 15 , wherein the first coating material and the plurality of light-conversion hybrid particles form a spherical coating structure, and the second coating material has a layered structure. 23 . The method for preparing a light-conversion material as claimed in claim 22 , wherein the particle size of the spherical coating structure is 0.1-40 μm, and the thickness of the layered structure of the second coating material is 5-50 nm. 24 . The method for preparing a light-conversion material as claimed in claim 22 , wherein the particle size of the light-conversion mixed particles is 0.1 to 5 μm, and the particle size of the light-conversion material is 0.2 to 50 μm. 25 . The method for preparing a light-conversion material according to claim 15 , wherein based on 100 wt % of the total weight of the light-conversion hybrid particles, the matrix accounts for 30-60 wt %, and the plurality of quantum dots accounts for 5-50 wt %. 26 . The method for preparing a light-conversion material as claimed in claim 15 , wherein the light-conversion hybrid particles further comprise a plurality of diffusion particles uniformly dispersed in the matrix. 27 . The method for preparing a light-conversion material according to claim 26 , wherein the plurality of diffusion particles account for 0.5-20 wt % based on 100 wt % of the total weight of the light-conversion mixed particles. 28 . The method for preparing the light-converting material as claimed in claim 15 , further comprising repeatedly performing the steps of forming the first cladding material and forming the second cladding material.

29. A display device comprising the light conversion material according to any one of claims 1 to 14.

30. A lighting device comprising the light conversion material according to any one of claims 1 to 14.

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