Wafer Carrier Mechanism and Wafer Processing Apparatus

Abstract

An embodiment of the present application discloses a wafer carrying mechanism and a wafer processing device. The wafer carrying mechanism arranges a tray in a receiving groove opened on a base, and the wafer is carried by the tray. A limiting structure is provided on the inner bottom wall of the receiving groove. When the tray or the wafer shows a locally excessive temperature, the adjusting piece can be selectively arranged in a local area in the receiving groove, and the adjusting piece is restricted in the receiving groove by the limiting structure to adjust the heat distribution in the local area. The heat in the local area is conducted to the edge area of the adjusting piece through the adjusting piece, forming a redistribution of the local heat with a prominent temperature, thereby improving the uniformity of the heat distribution on the surface of the tray or the wafer and realizing uniform heating of the wafer.

Description

Technical Field

[0001] This application relates to the technical field of film-forming equipment, and particularly relates to a wafer carrier mechanism and a wafer processing device. Background Art

[0002] In existing film-forming equipment for Metal-organic Chemical Vapor Deposition (MOCVD), during the process of heating a wafer in a reaction chamber, generally, a heating component is used to heat a base, and then the heat is directly or indirectly transferred from the base to the wafer. When designing the entire heating component and the base, the issue of the uniformity of the heating temperature of the wafer is generally considered. However, due to the limitation of the uniformity of the base material itself or the complexity of the control of the heating component, it is easy to cause uneven heating of the base, and thus uneven heat transfer to the tray or the wafer, resulting in uneven surface temperature of the wafer. Summary of the Invention

[0003] Embodiments of this application provide a wafer carrier mechanism and a wafer processing device, which can solve the problem of poor uniformity of the surface temperature of the wafer in existing film-forming equipment.

[0004] An embodiment of this application provides a wafer carrier mechanism, including: a base, on the upper surface of which a receiving groove is formed along the thickness direction of the base; a tray, including a receiving groove for carrying a wafer, and the tray is disposed in the receiving groove; a first shaft body, the first shaft body extends along the central axis of the base, and the base rotates along the central axis driven by the first shaft body; an adjusting piece, the adjusting piece is disposed in the receiving groove and is configured to be removable from the receiving groove, and the heat conductivity within the adjusting piece is greater than the heat conductivity of the adjusting piece for transferring heat to the tray; a limiting structure, arranged on the inner bottom wall of the receiving groove, and the limiting structure is configured to limit the adjusting piece in a local area within the receiving groove; the distance between the lower surface of the tray and the inner bottom wall of the receiving groove in the thickness direction is H1, and the height of the adjusting piece in the thickness direction is H3, and H1 > H3.

[0005] Optionally, the receiving groove includes multiple groups of the limiting structures and multiple local areas corresponding to the limiting structures, the adjusting pieces are configured to be multiple, and each adjusting piece corresponds to at least one of the local areas.

[0006] Optionally, the limiting structure includes at least one set of limiting portions arranged in a ring shape, and the limiting portions are coaxially arranged with the central axis of the bearing groove, so as to define two limiting cavities spaced apart in the diameter direction of the bearing groove in the receiving groove; the positive projection of each limiting cavity in the thickness direction falls within the bearing groove; the adjusting piece includes at least two adjusting single pieces, and the radii of the at least two adjusting single pieces increase in sequence along the diameter direction of the bearing groove, and each adjusting single piece is configured to be capable of being placed in one of the limiting cavities.

[0007] Optionally, an annular groove is formed in the inner side wall of the receiving groove at one end close to the opening of the receiving groove in the thickness direction, and the tray is arranged in the annular groove; the height of the limiting structure in the thickness direction is H2, and H1 > H2.

[0008] Optionally, the limiting portion is an annular rib protruding from the inner bottom wall of the receiving groove.

[0009] Optionally, the limiting portion is a group of multiple protrusions arranged in a ring shape and spaced apart, and the protrusions protrude from the inner bottom wall of the receiving groove.

[0010] Optionally, the limiting structure includes at least one set of limiting portions arranged in a ring shape, and the limiting portions are coaxially arranged with the central axis of the bearing groove. The limiting portions are configured as a group of multiple grooves arranged in a ring shape and spaced apart, and the grooves are formed in the inner bottom wall of the receiving groove along the thickness direction; a protruding portion matching the grooves is protrudingly arranged on the adjusting piece.

[0011] Optionally, a plurality of air holes are formed in the inner bottom wall of the receiving groove; through holes corresponding to the air holes are formed in the adjusting piece.

[0012] Optionally, it further includes a second shaft body coaxially arranged with the first shaft body, the first shaft body surrounds the second shaft body, and the tray rotates in the receiving groove under the drive of the second shaft body.

[0013] Meanwhile, an embodiment of the present application further provides a wafer processing device, which includes the wafer bearing mechanism as described above. The wafer processing device further includes: a cavity wall with an opening on the upper side, and the base of the wafer bearing mechanism is arranged inside the cavity wall; a cover body covering the opening on the upper side of the cavity wall, and a reaction cavity is formed between the base and the cover body; a nozzle extending into the reaction cavity, the nozzle is coaxially arranged with the central axis of the base, and at least one air jet port communicating with the reaction cavity is arranged on the nozzle, and an included angle exists between the air outlet direction of the air jet port and the central axis of the base; a heating component arranged below the base, and the heating component surrounds the first shaft body.

[0014] The beneficial effects of the present application are as follows: a wafer carrying mechanism and a wafer processing device are provided. The wafer carrying mechanism arranges a tray in a receiving groove opened on a base, and the tray is used to carry the wafer. A limiting structure is provided on the inner bottom wall of the receiving groove. When the tray or the wafer shows a locally excessive temperature, the adjusting piece can be selectively arranged in a local area in the receiving groove, and the adjusting piece is restricted in the receiving groove by the limiting structure to adjust the heat distribution in the local area. The heat in the local area is conducted to the edge area of the adjusting piece through the adjusting piece, forming a redistribution of the local heat with a prominent temperature, thereby improving the uniformity of the heat distribution on the surface of the tray or the wafer and realizing uniform heating of the wafer. Description of the Drawings

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0016] Figure 1 is a schematic structural diagram of a base, a tray, and a wafer in the wafer carrying mechanism provided by an embodiment of the present application;

[0017] Figure 2 is Figure 1 a partial structural diagram of

[0018] Figure 3 is Figure 2 a sectional view taken along the A-A direction of

[0019] Figure 4 is a schematic combined structural diagram of an adjusting piece and a base in the wafer carrying mechanism provided by an embodiment of the present application;

[0020] Figure 5 is a schematic combined structural diagram of an adjusting piece, a tray, a wafer, and a base in the wafer carrying mechanism provided by an embodiment of the present application;

[0021] Figure 6 is a schematic structural diagram of a first shaft body, a second shaft body, a base, and a tray in the wafer carrying mechanism provided by an embodiment of the present application;

[0022] Figure 7 is a schematic structural diagram of another base in the wafer carrying mechanism provided by an embodiment of the present application;

[0023] Figure 8 is a schematic structural diagram of yet another base in the wafer carrying mechanism provided by an embodiment of the present application;

[0024] Figure 9 It is a graph of the temperature distribution in the radial direction of the wafer of the wafer carrier mechanism provided by the embodiment of the present application before inserting the adjusting sheet;

[0025] Figure 10 It is a graph of the temperature distribution in the radial direction of the wafer of the wafer carrier mechanism provided by the embodiment of the present application after inserting the adjusting sheet;

[0026] Figure 11 It is a schematic structural diagram of the wafer processing device provided by the embodiment of the present application.

[0027] Among them, Figure 9 and Figure 10 in, D represents the diameter of the wafer 200, the unit is cm, and T represents the temperature of the wafer 200, the unit is °C.

[0028] Explanation of reference numerals:

[0029] 100, wafer carrier mechanism, 110, base, 111, receiving groove, 111a, inner bottom wall, 111b, inner side wall, 112, annular groove, 113, air hole, 120, tray, 121, carrying groove, 130, first shaft body, 131, first driving end, 140, limiting structure, 141, limiting part, 141a, annular rib, 141b, protrusion, 141c, groove, 142, limiting cavity, 150, second shaft body, 160, cover plate, 161, through hole;

[0030] 200, wafer;

[0031] 300, adjusting sheet, 301, through hole, 310, single adjusting piece;

[0032] 400, wafer processing device, 410, cavity wall, 420, cover body, 421, jack, 430, reaction chamber, 440, nozzle, 441, jet orifice, 4411, vertical section, 4412, bent section, 441a, first jet orifice, 441b, second jet orifice, 441c, third jet orifice, 450, heating component. Detailed implementation manners

[0033] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation manners described herein are only for explaining and illustrating the present application, and are not used to limit the present application. In the present application, unless otherwise stated, the orientation terms such as "upper" and "lower" generally refer to the upper and lower in the actual use or working state of the device, specifically the drawing direction in the accompanying drawings; and "inner" and "outer" refer to the outline of the device. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of the described features.

[0034] An embodiment of the present application provides a wafer carrier mechanism and a wafer processing device. The wafer carrier mechanism arranges a tray in a receiving groove opened on a base, and the tray bears the wafer through a receiving groove of the tray. A limiting structure is provided on the inner bottom wall of the receiving groove. When the tray or the wafer shows a local overheat, the adjusting piece is arranged in a local area of the receiving groove, and the adjusting piece is restricted in the receiving groove by the limiting structure to adjust the heat distribution in the local area. The heat in the local area is conducted to the edge area of the adjusting piece through the adjusting piece, forming a redistribution of the local heat with a prominent temperature, thereby improving the uniformity of the heat distribution on the surface of the tray or the wafer and realizing uniform heating of the wafer. As a typical application, the wafer carrier mechanism can be used in a wafer processing device, such as an MOCVD wafer processing device, to perform chemical vapor deposition on the surface of the wafer.

[0035] In an embodiment of the present application, a wafer carrier mechanism 100 is provided. Refer to Figures 1 to 7 , the wafer carrier mechanism 100 includes: a base 110, a tray 120, a first shaft body 130, and a limiting structure 140.

[0036] Refer to Figures 1 to 7The base 110 is circular in shape and has a central axis (not shown in the figure). The upper surface of the base 110 is provided with a receiving groove 111 along the thickness direction X of the base 110. The number of the receiving groove 111 is at least one. In this embodiment, the number of the receiving grooves 111 is four and they are arranged at intervals along the circumference of the base. Each receiving groove 111 includes an inner bottom wall 111a and an opening (not shown in the figure) arranged relatively along the thickness direction X. The receiving groove 111 also includes an inner side wall 111b arranged along the circumferential direction of the base 110. The tray 120 is arranged in the receiving groove 111. Specifically, the tray 120 is embedded in the opening of the receiving groove 111. The tray 120 is used to carry the wafer 200. In this embodiment, the tray 120 is in the shape of a disc. The upper surface of the tray 120 is provided with a carrying groove 121 for carrying the wafer 200. In other implementations, the tray 120 is in the shape of a circular ring, and the bearing groove 121 is provided on the inner peripheral wall of the tray 120 . The shape of the bearing groove 121 is a circular groove that matches the shape of the wafer 200 .

[0037] Reference Figure 1 and Figure 6 , the first shaft 130 extends along the central axis of the base 110, and the base 110 can rotate along the central axis of the base 110 driven by the first shaft 130, and the tray 120 and the wafer 200 carried by it rotate with the base 110, so that the tray 120 and the wafer 200 carried by it rotate along the circumference of the base 110. In this embodiment, the first shaft 130 has a first driving end 131, and the first shaft 130 is connected to the lower surface of the base 110 through the first driving end 131 to drive the base 110 to rotate.

[0038] Reference Figures 1 to 3, the limiting structure 140 is arranged on the inner bottom wall 111a of the receiving groove 111. The limiting structure 140 is configured to be able to limit the adjusting piece 300 within the receiving groove 111. The adjusting piece 300 can be selectively arranged in a partial area of the receiving groove 111 to adjust the heat distribution in this partial area. Specifically, the limiting structure 140 is configured to limit the adjusting piece 300 within the receiving groove 111 when the local temperature of the wafer 200 is relatively high. The adjusting piece 300 within the receiving groove 111 is oppositely arranged in the thickness direction X of the base 110 with respect to the area with a relatively high temperature of the wafer 200 or the receiving groove 121 of the tray 120. The heat within the area with a relatively high temperature of the wafer 200 or the receiving groove 121 of the tray 120 is conducted to the adjusting piece 300. The heat conducted to the adjusting piece 300 diffuses within the adjusting piece 300 to the edge area of the adjusting piece 300, and then diffuses from the edge area of the adjusting piece 300 to the outside of the adjusting piece 300 to redistribute the heat conducted to the adjusting piece 300. The redistributed heat will further be transferred to the tray 120 and heat the wafer 200 through the tray 120. Thus, through the heat conduction of the adjusting piece 300, a redistribution of the heat on the base 110 is formed. The redistributed heat heats the wafer 200 through the tray 120, thereby improving the uniformity of the heat distribution on the surface of the wafer 200 and achieving uniform heating of the wafer 200.

[0039] For heating the wafer 200 loaded on the tray 120, the base 110 is heated by a heating component (usually an induction coil). The base 110 heats the tray 120 through thermal radiation to transfer heat to the tray 120, and the tray 120 transfers heat to the wafer 200 through thermal radiation to heat the wafer 200. However, for this heating method of thermal radiation, due to the uniformity of the material of the base 110 itself and the complexity of the control of the heating component, there will be a deviation between the actual heating performance and the designed heating performance, resulting in non-uniform heating temperature of the base, and further causing fluctuations in the temperature distribution on the surface of the wafer 200, and it is easy to have a situation where the local temperature is too high.

[0040] To ensure the uniformity of the heating of the wafer 200, the prior art usually changes the heat conduction efficiency by changing the local distance between the susceptor and the wafer or between the susceptor and the heat source. For example, the gap with the wafer or the heat source is increased in the region with a relatively high temperature (i.e., the path of heat transfer is increased), and the gap with the wafer or the heat source is decreased in the region with a relatively low temperature (i.e., the path of heat transfer is decreased). Therefore, the technical solutions adopted in the prior art mainly include the following two types: 1. Adjust the position of the heat source to change the local distance between the susceptor and the heat source. However, due to the complexity of the heating environment and the magnetic field distribution, this adjustment method has an overall impact, is difficult to adjust, and the effect is difficult to predict; 2. Adjust the shape of the susceptor to change the local distance between the susceptor and the wafer. However, this adjustment scheme requires reprocessing the entire susceptor, has a slow adjustment cycle, a long verification cycle, and a high adjustment cost.

[0041] However, for the wafer carrier mechanism 100 provided by the embodiments of the present application, there is no need to change the shape of the base 110, nor to adjust the position of the heat source. Instead, when it is found that the local temperature of the wafer 200 is too high, the adjusting piece 300 is placed in the receiving groove 111 and placed in the receiving groove 111 in a relatively fixed manner in cooperation with the limiting structure 140. In a specific embodiment, the adjusting piece 300 can be limited by the limiting cavity 142, and the adjusting piece 300 and the region with a relatively high temperature in the receiving groove 121 of the tray 120 are arranged opposite to each other in the thickness direction X. For example, when the temperature at the center position of the wafer 200 is relatively high, the wafer 200 is arranged in the receiving groove 121, resulting in the temperature of the central region 121a of the receiving groove 121 corresponding to the center position of the wafer 200 being higher than the temperature of the edge region 121b. The adjusting piece 300 is arranged opposite to the central region 121a in the thickness direction X. Since the adjusting piece 300 has a thickness in the thickness direction X, although the gap between the base 110 and the receiving groove 121 of the tray 120 is actually reduced, the overall thermal conductivity of the region in the receiving groove 111 where the adjusting piece 300 is located is actually improved. However, due to the fact that the thermal conductivity of the adjusting piece 300 in the embodiments of the present application is much higher than that of the gas, the heat in the region with a relatively high temperature will be more easily conducted to the adjusting piece 300 and diffused into a region with a relatively high temperature on the surface inside the adjusting piece 300, that is, the heat will be conducted along the inside of the adjusting piece 300 to the edge region of the adjusting piece 300, and then the heat will be diffused from the adjusting piece 300 into the surrounding space of the adjusting piece 300 and finally diffused onto the tray 120 to heat the wafer 200 through the tray 120. That is to say, when the adjusting piece 300 is located in a local region of the receiving groove 111, since the material of the adjusting piece 300 is a material with strong thermal conductivity but non-conductive, the thermal conductivity of the adjusting piece 300 itself is relatively high, and the space in the receiving groove 111 between the adjusting piece 300 and the tray 120 is filled with a gas (such as air or nitrogen), and the thermal conductivity of the gas is significantly lower than that of the adjusting piece 300. Therefore, the thermal conductivity of the adjusting piece 300 inside the piece will be greater than the overall thermal conductivity of the adjusting piece 300 transferring heat to the tray 120. In the whole process, a redistribution of the locally excessive heat of the base 110 is essentially formed to improve the uniformity of the heating temperature of the wafer 200, and the heat redistribution is carried out through the heat conduction of the adjusting piece 300, and the heat loss is relatively low, thereby improving the heating efficiency of the heating component and reducing the energy consumption.

[0042] In addition, referring to Figure 6 and Figure 7, the wafer carrier mechanism 100 further includes a second shaft body 150. The second shaft body 150 extends along the thickness direction X. The second shaft body 150 is coaxial with the first shaft body 130. The second shaft body 150 is inserted into the first shaft body 130. The first shaft body 130 surrounds the second shaft body 150. The tray 120 rotates in the receiving groove 111 under the drive of the second shaft body 150, so as to realize the rotation of the tray 120 and the wafer 200 carried thereon. It should be noted that only the approximate position of the second shaft body 150 is schematically demonstrated in the attached drawings. In an alternative embodiment, the rotation implementation manner of the tray 120 and the wafer 200 carried thereon can be (not shown). Ring teeth are provided on the periphery of the tray 120, and drive teeth are provided at one end of the second shaft body 150 extending into the base 110. The drive teeth are engaged with the ring teeth to drive the tray 120 and the wafer 200 carried thereon to rotate through the rotation of the second shaft body 150. Among them, a bearing is provided between the tray 120 and the base 110.

[0043] Since the tray 120 can rotate around the rotation axis of the base 110 under the drive of the base 110 by the first shaft body 130, and the tray 120 can also rotate around the central axis of the wafer 200 carried thereon under the drive of the second shaft body 150, during the heating process of the wafer 200, the temperature distribution on the wafer 200 / carrying groove 121 will show an annular distribution, forming a temperature ring.

[0044] Refer to Figures 1 to 5 , the limiting structure 140 includes at least one limiting portion 141. The limiting portions 141 are arranged in a ring shape. The limiting portions 141 are coaxially arranged with the central axis of the carrying groove 121. At least two limiting portions 141 are arranged in concentric rings to define two limiting cavities 142 spaced apart along the diameter direction of the carrying groove 121 in the receiving groove 111, that is, one limiting cavity 142 located inside the ring-shaped arranged limiting portions 141 and one limiting cavity 142 defined between the limiting portions 141 and the inner side wall 111b of the receiving groove 111. The orthographic projection of each limiting cavity 142 in the thickness direction X falls within the carrying groove 121. The orthographic projection of the temperature ring formed by the wafer 200 during the heating process in the thickness direction X also falls within the carrying groove 121. That is to say, each limiting cavity 142 corresponds to one or more temperature rings formed by the wafer 200 / carrying groove 121 during the heating process. Correspondingly, the adjusting piece 300 includes at least two adjusting single pieces 310. The radii of the at least two adjusting single pieces 310 increase in sequence along the diameter direction of the carrying groove 121 or the wafer 200. Each adjusting single piece 310 is configured to be able to be placed in a limiting cavity 142.

[0045] In other implementations, the limiting structure 140 includes at least two limiting portions 141, the at least two limiting portions 141 are arranged in a concentric ring shape, and the at least two limiting portions 141 define three limiting cavities 142 in the receiving groove 111 and arranged at intervals along the diameter direction of the bearing groove 121 or the wafer 200. That is, the innermost limiting portion 141 defines a limiting cavity 142, and the shape of the limiting cavity 142 is circular; a limiting cavity 142 is defined between two limiting portions 141, and the shape of the limiting cavity 142 is annular; a limiting cavity 142 is defined between the outermost limiting portion 141 and the inner side wall 111b of the receiving groove 111, and the shape of the limiting cavity 142 is annular. Correspondingly, referring to Figures 1 to 3 , the adjusting pieces 300 and the limiting cavities 142 are in one-to-one correspondence in number. The adjusting piece 300 includes five adjusting single pieces 310, the five adjusting single pieces 310 are arranged concentrically, the radii of the five adjusting single pieces 310 increase in sequence along the diameter direction of the bearing groove 121 or the wafer 200, and each adjusting single piece 310 is configured to be able to be placed in a limiting cavity 142. In other implementations, the shape of the adjusting single piece 310 can be arc-shaped or fan-shaped.

[0046] Among them, the material of the adjusting piece 300 is a material with strong thermal conductivity but non-conductive, such as silicon carbide SiC, silicon nitride SiN, etc., so that the adjusting piece 300 has good heat conduction performance. After the heat in the relatively high-temperature area of the wafer 200 is conducted to the adjusting piece 300, it can quickly spread and diffuse to the edge area of the adjusting piece 300 in the adjusting piece 300, and then diffuse to the outside of the adjusting piece 300 to heat the wafer 200. Among them, due to the good heat conduction performance of the adjusting piece 300, the propagation and diffusion speed of heat in the adjusting piece 300 is higher than the speed of heat diffusing from the inside of the adjusting piece 300 to the outside of the adjusting piece 300, so as to leave time for the redistribution of heat and avoid forming a new high-temperature area on the wafer 200.

[0047] In this embodiment, referring to Figures 1 to 5 , the limiting portion 141 protrudes from the inner bottom wall 111a of the receiving groove 111 in the form of an annular rib 141a. The number of the annular ribs 141a is four, and five limiting cavities 142 are defined in the receiving groove 111. Correspondingly, the number of the adjusting single pieces 310 in the adjusting piece 300 is five, the five adjusting single pieces 310 are arranged in a concentric ring shape, the radii of the five adjusting single pieces 310 increase from the inside to the outside in sequence along the diameter direction of the bearing groove 121 or the wafer 200, and each adjusting single piece 310 can be placed and restricted in the corresponding limiting cavity 142.

[0048] Since the temperature on the wafer 200 appears in the form of a temperature loop during the heating process, if there is a situation of excessively high local temperature during the heating of the wafer 200, that is, a high-temperature annular region with a relatively high temperature is formed on the wafer 200. At this time, one or more adjusting single chips 310 corresponding to the high-temperature annular region in the thickness direction X can be placed in the corresponding limiting cavities 142. The heat in the high-temperature annular region is conducted into the adjusting single chip 310 corresponding to it in the thickness direction X. The heat conducted into the adjusting single chip 310 is conducted to the edge region inside the adjusting single chip 310, and then diffused into the space around the adjusting single chip 310, and finally diffused onto the tray 120 to heat the wafer 200 through the tray 120. Since the adjusting single chip 310 is arranged on the inner bottom wall 111a of the receiving groove 111, the adjusting single chip 310 actually redistributes the locally excessive heat on the base 110 to improve the uniformity of the heating temperature of the wafer 200.

[0049] In addition, referring to Figure 3 and Figure 5 , a ring groove 112 is formed at one end of the inner side wall 111b of the receiving groove 111 close to the opening of the receiving groove 111 in the thickness direction X. The outer edge of the tray 120 is embedded in the ring groove 112. In this way, the stability of the assembly of the tray 120 and the receiving groove 111 can be ensured, and the tray 120 can be prevented from falling off the receiving groove 111 when the second shaft body 150 drives the tray 120 to rotate.

[0050] In addition, referring to Figure 5 , the distance between the lower surface of the tray 120 and the inner bottom wall 111a of the receiving groove 111 in the thickness direction X is H1, and the height of the annular rib 141a constituting the limiting structure 140 in the thickness direction X is H2. Referring to Figure 3 , the height of the adjusting piece 300 (specifically, the adjusting single chip 310) in the thickness direction X is H3. Then: H1 > H2, and / or, H1 > H3. That is to say, there is a gap between the lower surface of the tray 120 and the adjusting piece 300 and the limiting structure 140 to prevent the tray 120 from directly contacting the adjusting piece 300 and / or the limiting structure 140. The direct contact between the tray 120 and the adjusting piece 300 and / or the limiting structure 140 will cause the failure of the redistribution of the locally excessive heat of the base 110 by the adjusting piece 300, and even cause the temperature in the high-temperature region on the surface of the wafer 200 to become higher.

[0051] In other implementation manners, referring to Figure 7, each limiting part 141 includes a plurality of protrusions 141b arranged in a ring and spaced apart. The protrusions 141b protrude from the inner bottom wall 111a of the receiving groove 111. The limiting part 141 is formed by the plurality of protrusions 141b. Compared with the annular rib 141a, the occupied volume of the internal space of the receiving groove 111 can be reduced, and the heat conduction effect of the adjusting single piece 310 in the adjusting piece 300 can be increased.

[0052] In other implementation manners, referring to Figure 8 , each limiting part 141 includes a plurality of grooves 141c arranged in a ring and spaced apart. Each groove 141c is opened on the inner bottom wall 111a of the receiving groove 111 along the thickness direction X of the base 110. Correspondingly, a protruding part (not shown in the figure) that cooperates with the groove 141c protrudes on the adjusting single piece 310. When it is necessary to place the adjusting single piece 310 in the receiving groove 111 to conduct heat on the wafer 200, the adjusting single piece 310 can be inserted into the corresponding groove 141c through the protruding part. In addition, instead of providing a protruding part on the adjusting single piece 310, positioning pins can be provided on the inner bottom wall 111a of the receiving groove 111, and the adjusting single piece 310 can be fixed in the receiving groove 111 through the cooperation of the positioning pins and the grooves 141c.

[0053] In addition, referring to Figure 2 and Figure 4 , a plurality of air holes 113 are opened on the inner bottom wall 111a of the receiving groove 111. The shape of the air holes 113 is L-shaped. Specifically, the air holes 113 include a vertical section (not shown in the figure) extending along the thickness direction X of the base 110 and a horizontal section (not shown in the figure) perpendicular or approximately perpendicular to the thickness direction X of the base 110. One end of the horizontal section extends to the outer side wall of the base 110, the other end of the horizontal section is communicated with the vertical section, and the end of the vertical section far from the horizontal section extends to the inner bottom wall 111a of the receiving groove 111; guide through holes 301 corresponding to the air holes 113 are opened on the adjusting piece 300. Specifically, the vertical sections of the plurality of air holes 113 are arranged at intervals along the diameter direction of the wafer 200, the horizontal sections of the plurality of air holes 113 are arranged at intervals along the circumferential direction of the base 110, the number of air holes 113 in each limiting cavity 142 is two, and they are arranged opposite to each other along the diameter direction of the wafer 200. Two guide through holes 301 are opened on each adjusting single piece 310. The guide through holes 301 correspond to the air holes 113 in number and are communicated with each other. The air holes 113 are used for the intake and exhaust of purging gas. As Figure 2 and Figure 4 shown, the air holes 113 are only for exemplary representation. Based on the need, air holes 113 with different shapes can be opened at different positions. The air holes 113 and the guide through holes 301 are communicated to form a gas guiding channel, which is convenient for purging or heat conduction.

[0054] In addition, referring to Figures 1 to 3, a cover plate 160 is provided on the upper surface of the base 110 to cover the upper surface. A through hole 161 is formed in the cover plate 160 and is in communication with the accommodation groove 111 in the thickness direction X. The cover plate 160 can cover the upper surface of the base 110 outside the accommodation groove 111, thereby enclosing the second driving end on the second shaft body 150 and preventing it from being directly exposed in the chamber, reducing the possibility of being contaminated.

[0055] Meanwhile, referring to Figure 11 , an embodiment of the present application further provides a wafer processing apparatus 400, which includes a wafer carrying mechanism 100, a cavity wall 410, a cover body 420, a nozzle 440, and a heating component 450.

[0056] The upper side of the cavity wall 410 is open, and the base 110 of the wafer carrying mechanism is arranged inside the cavity wall 410. The heating component 450 is disposed below the lower surface of the base 110 and is arranged around the first shaft body 130.

[0057] The cover body 420 is detachably covered on the opening on the upper surface of the cavity wall 410. A reaction chamber 430 is formed between the base 110 and the cover body 420. A jack 421 coaxial with the second shaft body 150 is formed in the middle of the surface of the cover body 420. The nozzle 440 is inserted into the jack 421. One end of the nozzle 440 is located outside the jack 421 and is connected to a gas source (not shown in the figure). The other end of the nozzle 440 extends into the inner side of the reaction chamber 430. At least one air jet port 441 communicating with the reaction chamber 430 is arranged at the inner side end of the nozzle 440 in the reaction chamber 430. In this embodiment, referring to Figure 11 , the number of air jet ports 441 on the nozzle 440 is three, including a first air jet port 441a, a second air jet port 441b, and a third air jet port 441c. The first air jet port 441a, the second air jet port 441b, and the third air jet port 441c are arranged at intervals in the thickness direction X. The air outlet direction of each air jet port forms an angle with the central axis of the base 110. In other implementation manners, the nozzle 440 can be selected to have four or five air inlets, that is, the number of air jet ports is four or five, which can be selected according to actual needs.

[0058] Wherein, each air jet port 441 includes a vertical section 4411 extending in the thickness direction X and a bent section 4412 connected to one end of the vertical section 4411. The end of the vertical section 4411 far from the bent section 4412 is connected to the gas source, and the end of the bent section 4412 far from the vertical section 4411 serves as an air outlet end and faces the upper surface of the base 110.

[0059] Referring to Figure 4 and Figure 5 , the usage method of the wafer processing apparatus 400 provided by the embodiment of the present application is described as follows:

[0060] In use, open the cover body 420, place the tray 120 and the wafer 200 carried thereon in the annular groove 112 of the accommodation groove 111. The tray 120 is directly or indirectly connected to the second driving end of the second shaft body 150. Close the cover body 420, start the first shaft body 130, the first shaft body 130 drives the base 110 to rotate, start the second shaft body 150, and the second shaft body 150 drives the tray 120 and the wafer 200 carried thereon to rotate within the accommodation groove 111. Turn on the heating component 450 to heat the base 110. The base 110 conducts the heat generated by the heating component 450 to the wafer 200 through thermal radiation via the tray 120 to heat the wafer 200. During the heating process, detect the temperature on the surface of the wafer 200. Refer to Figure 9 , in the temperature distribution of the wafer 200 in its diameter direction, the temperature at the central position of the wafer 200 (i.e., the area around the central axis of the wafer 200) is relatively high, indicating that the heating of the heating component 450 is uneven.

[0061] Stop driving the first shaft body 130 and the second shaft body 150, open the cover body 420 to take out the wafer 200 and the tray 120 with too high local surface temperature. Refer to Figure 4 and Figure 5 , place the adjustment single piece 310 in the innermost limiting cavity 142. The adjustment single piece 310 is disposed opposite to the central position of the wafer 200 in the thickness direction X. Then, place the tray 120 and the wafer 200 carried by the tray 120 back in the annular groove 112 of the accommodation groove 111. Close the cover body 420, start the first shaft body 130 and the second shaft body 150, and start the heating component 450 to heat the base 110. Due to the placement of the adjustment single piece 310 in the accommodation groove 111, the heat in the area with relatively high temperature of the wafer 200 can be conducted into the adjustment single piece 310. The heat conducted into the adjustment single piece 310 is conducted inside the adjustment single piece 310 to the edge area of the adjustment single piece 310, and then diffuses into the surrounding space of the adjustment single piece 310, and finally diffuses onto the tray 120 and heats the wafer 200 through the tray 120. Refer to Figure 10 , which can reduce the central temperature of the wafer 200 by 1°C to 5°C and improve the uniformity of the temperature distribution of the wafer 200 in its diameter direction.

[0062] The above has introduced in detail a wafer carrying mechanism and a wafer processing device provided by an embodiment of the present application. Specific examples are used herein to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A wafer carrier mechanism, characterized in that, Comprising: A base (110), on the upper surface of which an accommodation groove (111) is formed along the thickness direction (X) of the base (110); A tray (120), including a loading groove (121) for loading a wafer (200), and the tray (120) is disposed in the accommodation groove (111); A first shaft body (130), which extends along the central axis of the base (110), and the base (110) rotates along the central axis driven by the first shaft body (130); An adjusting piece (300), which is disposed in the accommodation groove (111) and is configured to be removable from the accommodation groove (111), and the heat conductivity within the adjusting piece (300) is greater than the heat conductivity of the adjusting piece (300) transferring heat to the tray (120); A limiting structure (140), arranged on the inner bottom wall (111a) of the accommodation groove (111), and the limiting structure (140) is configured to limit the adjusting piece (300) within a partial area in the accommodation groove (111); the distance between the lower surface of the tray (120) and the inner bottom wall (111a) of the accommodation groove (111) in the thickness direction (X) is H1, and the height of the adjusting piece (300) in the thickness direction (X) is H3, where H1 > H3.

2. The wafer carrier mechanism according to claim 1, wherein The accommodation groove (111) includes multiple groups of the limiting structures (140) and multiple partial areas corresponding to the limiting structures, and the adjusting pieces (300) are configured in multiple numbers, and each adjusting piece (300) corresponds to at least one of the partial areas.

3. The wafer carrier mechanism according to claim 1, wherein, The limiting structure (140) includes at least one group of annularly arranged limiting parts (141), and the limiting parts (141) are coaxially arranged with the central axis of the loading groove (121) to define two limiting cavities (142) spaced apart along the diameter direction of the loading groove (121) in the accommodation groove (111); The orthographic projection of each limiting cavity (142) in the thickness direction (X) falls within the loading groove (121); The adjusting piece (300) includes at least two adjusting single pieces (310), and the radii of the at least two adjusting single pieces (310) increase in sequence along the diameter direction of the loading groove (121), and each adjusting single piece (310) is configured to be placed in one of the limiting cavities (142).

4. The wafer carrier mechanism according to claim 3, wherein An annular groove (112) is formed on the inner side wall (111b) of the accommodation groove (111) near the opening end in the thickness direction (X), and the tray (120) is disposed in the annular groove (112); The height of the limiting structure (140) in the thickness direction (X) is H2, and H1 > H2.

5. The wafer carrier mechanism according to claim 3, characterized in that, The limiting part (141) is an annular rib (141a), and the annular rib (141a) protrudes from the inner bottom wall (111a) of the accommodation groove (111).

6. The wafer carrier mechanism according to claim 3, wherein, The limiting part (141) is a group of multiple protrusions (141b) arranged in a ring and spaced apart, and the protrusions (141b) protrude from the inner bottom wall (111a) of the receiving groove (111).

7. The wafer carrier mechanism according to claim 1, wherein The limiting structure (140) includes at least one group of limiting parts (141) arranged in a ring, the limiting parts (141) are coaxially arranged with the central axis of the bearing groove (121), the limiting parts (141) are configured as a group of multiple grooves (141c) arranged in a ring and spaced apart, and the grooves (141c) are opened in the inner bottom wall (111a) of the receiving groove (111) along the thickness direction (X); A protruding part that cooperates with the groove (141c) protrudes from the adjusting piece (300).

8. The wafer carrier mechanism according to claim 1, characterized in that, A plurality of air holes (113) are opened in the inner bottom wall (111a) of the receiving groove (111); A through hole (301) corresponding to the air hole (113) is opened in the adjusting piece (300).

9. The wafer carrier mechanism according to claim 1, characterized in that It further includes a second shaft body (150) coaxially arranged with the first shaft body (130), the first shaft body (130) surrounds the second shaft body (150), and the tray (120) rotates in the receiving groove (111) driven by the second shaft body (150).

10. A wafer processing apparatus, characterized in that, The wafer processing device includes the wafer carrying mechanism according to any one of claims 1 to 9, and the wafer processing device further includes: A cavity wall (410), the cavity wall (410) has an opening on the upper side, and the base (110) of the wafer carrying mechanism is arranged inside the cavity wall (410); A cover body (420) is covered on the opening on the upper side of the cavity wall (410), and a reaction cavity (430) is formed between the base (110) and the cover body (420); A nozzle (440) extends into the reaction cavity (430), the nozzle (440) is coaxially arranged with the central axis of the base (110), at least one air jet port (441) communicating with the reaction cavity (430) is arranged on the nozzle (440), and an included angle exists between the air outlet direction of the air jet port (441) and the central axis of the base (110); A heating component (450) is arranged below the base (110), and the heating component (450) surrounds the first shaft body (130).

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