Electronic modulation device

Abstract

The present invention provides an electronic modulation device, comprising a substrate, an electrode, and an insulating layer. The electrode is disposed on the substrate and includes an opening, wherein the opening defines a top edge and a bottom edge of the electrode and has a center portion. The insulating layer is disposed on the electrode and within the opening. The thickness of the insulating layer at the bottom edge is greater than the thickness of the insulating layer at the center portion.

Description

[0001] This case is a divisional application of the Chinese patent application with application number "202010074359.9" filed on January 22, 2020 Technical Field

[0002] The present invention relates to an electronic modulation device, in particular to an organic insulating layer of the electronic modulation device. Background Art

[0003] Electronic products containing display panels, such as smartphones, tablets, laptops, monitors, and televisions, have become indispensable in modern society. With the booming growth of these portable electronic products, consumers have high expectations for their quality, functionality, and price. Some of these electronic products incorporate communication capabilities, which rely on operating modulation structures (e.g., antennas) to achieve this communication capability.

[0004] While existing electronic modulation devices generally meet their intended uses, they still do not fully meet requirements in all aspects. For example, dielectric loss caused by the insulators in electronic modulation devices is a problem. Therefore, there are still problems that need to be solved in current electronic device technology. Summary of the Invention

[0005] According to some embodiments of the present invention, an electronic modulation device is provided, comprising a substrate, an electrode, and an insulating layer. The electrode is disposed on the substrate and includes an opening, wherein the opening defines a top edge and a bottom edge of the electrode, and the opening has a center portion. The insulating layer is disposed on the electrode and within the opening. The thickness of the insulating layer at the bottom edge is greater than the thickness of the insulating layer at the center portion. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] In order to make the above-mentioned objects, features and advantages of the present invention more clearly understood, the specific embodiments of the present invention are described in detail below with reference to the accompanying drawings, in which:

[0007] Figure 1A A schematic cross-sectional view of an electronic modulation device according to some embodiments of the present invention is shown;

[0008] Figure 1B In some embodiments according to the present invention, Figure 1A An enlarged schematic diagram of region A in FIG;

[0009] Figure 1C In some embodiments according to the present invention, Figure 1A A schematic top view of area A in FIG;

[0010] Figure 2AA schematic cross-sectional view of an electronic modulation device according to some embodiments of the present invention is shown;

[0011] Figure 2B In some embodiments according to the present invention, Figure 2A An enlarged schematic diagram of region C in FIG;

[0012] Figure 2C In some embodiments according to the present invention, Figure 2A A schematic top view of region C in FIG.

[0013] Figure 3A-3H A schematic top view showing an opening of a first electrode according to some embodiments of the present invention;

[0014] Figure 4A-4G A schematic cross-sectional view showing a portion of an electronic modulation device according to some embodiments of the present invention;

[0015] Figures 5A-5F A schematic cross-sectional view showing a portion of an electronic modulation device according to some embodiments of the present invention;

[0016] Figures 6A-6F In some embodiments of the present invention, during the manufacturing process Figure 1A An enlarged schematic diagram of region A in FIG;

[0017] Figures 7A-7F In some embodiments of the present invention, during the manufacturing process Figure 1A An enlarged schematic diagram of region A in FIG;

[0018] Figures 8A-8D In some embodiments of the present invention, during the manufacturing process Figure 2A An enlarged schematic diagram of region C in FIG;

[0019] Figures 9A-9D In some embodiments of the present invention, during the manufacturing process Figure 2A Schematic diagram of the enlarged area C in FIG.

[0020] Explanation of symbols

[0021] 10. Electronic modulation device;

[0022] 20 electronic modulation device;

[0023] 102 first substrate;

[0024] 102A top surface;

[0025] 104 second substrate;

[0026] 104A Surface;

[0027] 104B surface;

[0028] 106 conditioning materials;

[0029] 108 buffer layer;

[0030] 108a first top edge;

[0031] 108b first bottom edge;

[0032] 108c center section;

[0033] 108s medial side;

[0034] 108S1 top surface;

[0035] 108S2 bottom surface;

[0036] 108p first opening;

[0037] 110 first electrode;

[0038] 110a second top edge;

[0039] 110b second bottom edge;

[0040] 110c center section;

[0041] 110p second opening;

[0042] 110s medial side;

[0043] 110S1 top surface;

[0044] 110S2 bottom surface;

[0045] 112 organic insulating layer;

[0046] 112r recessed portion;

[0047] 112t protrusion;

[0048] 114 second electrode;

[0049] 114p opening;

[0050] 116 support elements;

[0051] 202 mask;

[0052] 202' light shield;

[0053] 204 photoresist layer;

[0054] 204' remaining photoresist layer;

[0055] Area A;

[0056] Area B;

[0057] Area C;

[0058] CT geometric center;

[0059] d1 first width;

[0060] d2 second width;

[0061] d3 distance;

[0062] D area;

[0063] E area;

[0064] I-I' line segment;

[0065] r radius;

[0066] SQ minimum rectangle;

[0067] T1 first thickness;

[0068] T2 second thickness;

[0069] T3 third thickness;

[0070] T3' third thickness;

[0071] T4 fourth thickness;

[0072] T5 fifth thickness;

[0073] T6 sixth thickness;

[0074] T6' sixth thickness;

[0075] T7 seventh thickness;

[0076] T8 eighth thickness;

[0077] T-T' line segment;

[0078] W electromagnetic waves. DETAILED DESCRIPTION

[0079] The following is a detailed description of the electronic modulation device and the manufacturing method of the electronic modulation device according to the embodiment of the present invention. It should be understood that the following description provides many different embodiments or examples for implementing different forms of some embodiments of the present invention. The specific elements and arrangements described below are only for a simple and clear description of some embodiments of the present invention. However, it is clear that the exemplary embodiments described herein are for illustrative purposes only, and the concepts of the present invention can be embodied in various forms and are not limited to those exemplary embodiments. In addition, similar and / or corresponding numbers may be used in different embodiments to indicate similar and / or corresponding elements in order to clearly describe the present invention. However, the use of these similar and / or corresponding numbers is only for a simple and clear description of some embodiments of the present invention and does not represent any correlation between the different embodiments and / or structures discussed.

[0080] It should be understood that the exemplary embodiments of the present invention can be understood in conjunction with the accompanying drawings, which are also considered part of the complete description of the invention. The drawings of the present invention are not drawn to scale, and the sizes of elements may be arbitrarily enlarged or reduced to clearly illustrate the features of the present invention.

[0081] It should be understood that the elements or devices in the drawings may exist in various forms well known to those skilled in the art to which the present invention relates. In addition, the phrases "a layer on another layer," "a layer disposed above another layer," "a layer disposed on another layer," and "a layer disposed on another layer" may mean that one layer is in direct contact with another layer, or that one layer is not in direct contact with another layer and that one or more intervening layers are present between the two layers.

[0082] Furthermore, relative terms such as "lower," "bottom," "upper," or "top" may be used herein to describe the relationship of one element to another element in a drawing. It is understood that if the device in the drawing is turned upside down, the element described as being on the "lower" side would become the element on the "upper" side.

[0083] It should be understood that although the terms "first," "second," "third," etc. may be used herein to describe various elements, components, regions, layers, parts, and / or sections, these elements, components, regions, layers, parts, and / or sections should not be limited by these terms. These terms are merely used to distinguish different elements, components, regions, layers, parts, or sections. Thus, a first element, component, region, layer, part, or section discussed below could be referred to as a second element, component, region, layer, part, or section without departing from the teachings of the present invention.

[0084] As used herein, the terms "about" and "substantially" generally mean within 10%, within 5%, within 3%, within 2%, within 1%, or within 0.5% of a given value or range. The quantities given herein are approximate, meaning that even without the specific wording "about" or "substantially," the meaning of "about" or "substantially" may be implied.

[0085] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meanings as commonly understood by one of ordinary skill in the art to which this invention belongs. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the relevant art and this invention, and should not be interpreted in an idealized or overly formal manner unless specifically defined in the embodiments of the present invention.

[0086] In addition, in some embodiments of the present invention, terms related to bonding and connection, such as "connection" and "interconnection", unless otherwise defined, may refer to two structures being in direct contact, or may refer to two structures not being in direct contact, with other structures being located between the two structures, and such terms related to bonding and connection may also include situations where both structures are movable or both structures are fixed.

[0087] In addition, the phrase "a range between a first value and a second value" or "a range from a first value to a second value" means that the range includes the first value, the second value and other values ​​therebetween.

[0088] According to some embodiments of the present invention, an electronic modulation device is provided. The electronic modulation device may include an organic insulating layer having different thicknesses according to different positions. The thickness of the organic insulating layer can be controlled to reduce the dielectric loss of electromagnetic waves or reduce the amount of metal ions diffused into the modulation material.

[0089] Figure 1A A schematic cross-sectional structure diagram of an electronic modulation device 10 is shown according to some embodiments of the present invention. It should be understood that, according to some embodiments, additional features may be added to the electronic modulation device 10 described below. According to other embodiments, some features of the electronic modulation device 10 described below may be replaced or omitted. In addition, it should be understood that only a portion of the electronic modulation device 10 (e.g., a portion of the working area) is shown in the figure, and the electronic modulation device 10 may include other structures (e.g., non-working areas) as needed. In some embodiments, the electronic modulation device 10 may be used as an antenna, a smartphone, a tablet computer, a laptop computer, a monitor, a television and / or other applicable electronic modulation devices to receive and / or transmit electromagnetic waves. In some examples, certain components may be added or deleted in some applications.

[0090] Please refer to Figure 1A The electronic modulation device 10 may include a first substrate 102, a second substrate 104, and a modulation material 106. The second substrate 104 may be disposed opposite to the first substrate 102. The modulation material 106 may be disposed between the first substrate 102 and the second substrate 104. Specifically, the modulation material 106 may at least partially fill the space between the first substrate 102 and the second substrate 104. In some examples, the aforementioned space may be formed by at least one sealant (not shown) disposed between the first substrate 102 and the second substrate 104. The modulation material 106 may be a material having different properties (for example, dielectric constant) that can be adjusted by applying an electric field or other methods. In some embodiments, the modulation material 106 can be used to control the transmission of electromagnetic waves W (as indicated by the arrow), but is not limited thereto.

[0091] In some embodiments, the materials of the first substrate 102 and the second substrate 104 may include, but are not limited to, glass, quartz, sapphire, polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), rubber, glass fiber, ceramic, other suitable materials, or combinations thereof. In some embodiments, the first substrate 102 and the second substrate 104 may be flexible substrates, rigid substrates, or combinations thereof. In some embodiments, the material of the first substrate 102 may be the same as or different from the material of the second substrate 104. In some embodiments, the modulation material 106 may include, but is not limited to, liquid crystal molecules.

[0092] In addition, the electronic modulation device 10 may include a buffer layer 108, which is disposed on the first substrate 102. The buffer layer 108 may be disposed between the first substrate 102 and the first electrode 110. In some embodiments, the expansion coefficients of the first substrate 102 and the first electrode 110 may be substantially the same due to the intermediate buffer layer 108, thereby reducing the warpage of the first substrate 102. In some embodiments, the buffer layer 108 may include a first opening 108p, which may define a first top edge 108a and a first bottom edge 108b of the buffer layer 108 (e.g., Figure 1B The buffer layer 108 may include a top surface 108S1 and a bottom surface 108S2. Specifically, the first top edge 108a refers to the highest point of the edge of the top surface 108S1 of the buffer layer 108 in the cross-sectional structure.

[0093] In some embodiments, the material of the buffer layer 108 may include an organic insulating material, an inorganic insulating material, a metal material, other suitable materials, or a combination thereof, but is not limited thereto. The aforementioned organic insulating material may include acrylic or methacrylic organic compounds, isoprene, phenol-formaldehyde resin, benzocyclobutene (BCB), perfluorocyclobutane (PECB), polyimide, polyethylene terephthalate, or a combination thereof, but is not limited thereto. The aforementioned inorganic insulating material may include silicon nitride, silicon oxide, silicon oxynitride, or a combination thereof, but is not limited thereto. The aforementioned metal material may include titanium, molybdenum, tungsten, nickel, aluminum, gold, chromium, platinum, silver, copper, titanium alloy, molybdenum alloy, tungsten alloy, nickel alloy, aluminum alloy, gold alloy, chromium alloy, platinum alloy, silver alloy, copper alloy, other suitable materials, or a combination thereof, but is not limited thereto.

[0094] Please refer to Figure 1A The electronic modulation device 10 may include a first electrode 110, the first electrode 110 being disposed on the buffer layer 108, and the first electrode 110 being disposed between the first substrate 102 and the second substrate 104. The first electrode 110 may include a second opening 110p, and the second opening 110p may define a second top edge 110a and a second bottom edge 110b of the first electrode 110 (e.g., Figure 1B (as shown). The first electrode 110 may include a top surface 110S1 and a bottom surface 110S2. Specifically, the second top edge 110a refers to the highest point of the edge of the top surface 110S1 of the first electrode 110 in the cross-sectional structure. In some embodiments, the second bottom edge 110b of the first electrode 110 may be located further away from the first opening 108p than the first top edge 108a of the buffer layer 108.

[0095] In some embodiments, the first electrode 110 may include a conductive material. In some embodiments, the material of the first electrode 110 may include, but is not limited to, gold, copper, silver, tin, aluminum, molybdenum, tungsten, chromium, nickel, platinum, a gold alloy, a copper alloy, a silver alloy, a tin alloy, an aluminum alloy, a molybdenum alloy, a tungsten alloy, a chromium alloy, a nickel alloy, a platinum alloy, other suitable conductive materials, or combinations thereof. Furthermore, in some embodiments, the material of the first electrode 110 may be different from the material of the buffer layer 108.

[0096] Furthermore, the electronic modulation device 10 may include an organic insulating layer 112. The organic insulating layer 112 is disposed on the first electrode 110 and within the first opening 108p and the second opening 110p. The organic insulating layer 112 may be disposed between the first electrode 110 and the modulation material 106. In some embodiments, the organic insulating layer 112 may cover the buffer layer 108 and the first electrode 110 and contact the buffer layer 108 and the first electrode 110. In some embodiments, the organic insulating layer 112 may serve as an alignment layer for the modulation material 106.

[0097] In particular, the organic insulating layer 112 may have different thicknesses in the first opening 108p and the second opening 110p to reduce the dielectric loss of electromagnetic waves or to reduce the diffusion of metal ions into the modulation material. The configuration of the organic insulating layer 112, the buffer layer 108 and the first electrode 110 will be Figure 1B Described in detail in.

[0098] In some embodiments, the material of the organic insulating layer 112 may include a polymer (e.g., polyimide), a phenone-based insulating material, other suitable organic insulating materials, or a combination thereof, but is not limited thereto. For example, the phenone-based insulating material may include benzophenone, tetracarboxylicdianhydride (BTDA), or phenol formaldehyde resin (PF resin), but is not limited thereto. Furthermore, in other embodiments, an inorganic insulating layer may be used in place of the organic insulating layer 112.

[0099] Furthermore, the electronic modulation device 10 may further include a second electrode 114, which is disposed between the modulation material 106 and the second substrate 104. In some embodiments, the second electrode 114 may overlap with the first opening 108p and the second opening 110p. Figure 1A As shown, according to some embodiments, the second electrode 114 may include an opening 114 p .

[0100] Furthermore, the organic insulating layer 112 may also be disposed on the second electrode 114. In some embodiments, the buffer layer 108 may also be disposed between the second electrode 114 and the second substrate 104. Furthermore, according to some embodiments, the region B shown in the figure may have a configuration similar to that of region A (e.g., the thickness of the organic insulating layer 112).

[0101] In addition, the first electrode 110 and / or the second electrode 114 can each be electrically connected to a functional circuit (not shown). For example, the functional circuit can include active components (e.g., thin-film transistors (TFTs) and / or chips) or passive components. In some embodiments, the functional circuit can be disposed on the surface 104B of the second substrate 104 on which the second electrode 114 is disposed. In other embodiments, the functional circuit can be disposed on the surface 104A of the second substrate 104, with the surface 104A facing the surface 104B, and the second electrode 114 can be electrically connected to the functional circuit. In some examples, the second electrode 114 can be electrically connected to the functional circuit via a through-hole (not shown) extending through the second substrate 104. In some embodiments, the active components can be integrated with circuits in a gate-on-array (GOP) structure. In some embodiments, the passive components can be controlled by an IC or microchip disposed inside or outside the electronic modulation device 10.

[0102] As previously mentioned, according to some embodiments, the second electrode 114 may include an opening 114p. More specifically, according to some embodiments, the second electrode 114 may be a patterned electrode having multiple portions. In some embodiments, the multiple portions of the second electrode 114 may be connected to different circuits.

[0103] According to some embodiments, the electronic modulation device 10 may further include a support element 116 disposed between the first substrate 102 and the second substrate 104. In some embodiments, the support element 116 may be disposed between the first electrode 110 and the second electrode 114. The support element 116 may provide structural stability for the electronic modulation device 10. In some examples, the support element 116 may be formed on the first substrate 102 or the second substrate 104, but is not limited thereto. The organic insulating layer 112 may be formed on the support element 116, the first substrate 102, and / or the second substrate 104.

[0104] In some embodiments, the material of the support element 116 may include a dielectric material, a metal material, an organic material, or a combination thereof, but is not limited thereto. In some embodiments, the dielectric material may include silicon oxide, silicon nitride, silicon oxynitride, other high-k dielectric materials, or a combination thereof, but is not limited thereto. In some embodiments, the metal material may include copper, silver, gold, copper alloys, silver alloys, gold alloys, other suitable metal materials, or a combination thereof, but is not limited thereto. In some embodiments, the organic material may include polyimide, epoxy resin, acrylic resin (e.g., polymethyl methacrylate (PMMA)), benzocyclobutene, polyester, polydimethylsiloxane (PDMS), polytetrafluoroethylene (PTFE), or a combination thereof, but is not limited thereto.

[0105] Furthermore, in some embodiments, the support element 116 may include, but is not limited to, a sealant, a photospacer, a liquid crystal polymer (LCP) layer, or a combination thereof. In some embodiments, the support element 116 may include a photocuring or thermal curing sealant. For example, the support element 116 may include a photocuring sealant (UV light or visible light), a thermal curing sealant, or a photothermal curing sealant.

[0106] Next, please refer to Figure 1B , Figure 1B In some embodiments according to the present invention, Figure 1A As previously mentioned, the organic insulating layer 112 may have different thicknesses in the first opening 108p and the second opening 110p. It should be understood that the thickness of the organic insulating layer 112 described herein refers to the thickness in the normal direction of the first substrate 102 (e.g., Figure 1B More specifically, in some examples, a cross-sectional structural image of the organic insulating layer 112 can be obtained using a scanning electron microscope (SEM), and the thickness of the organic insulating layer 112 can be measured based on the cross-sectional structural image.

[0107] The organic insulating layer 112 located at the first top edge 108a of the buffer layer 108 may have a first thickness T1, and the organic insulating layer 112 located at the first bottom edge 108b of the buffer layer 108 may have a second thickness T2. Furthermore, the organic insulating layer 112 located at the second top edge 110a of the first electrode 110 may have a third thickness T3, and the organic insulating layer 112 located at the second bottom edge 110b of the first electrode 110 may have a fourth thickness T4.

[0108] In some embodiments, the fourth thickness T4 of the organic insulating layer 112 at the second bottom edge 110b may be greater than the first thickness T1 of the organic insulating layer 112 at the first top edge 108a. In some embodiments, the ratio of the first thickness T1 of the organic insulating layer 112 to the fourth thickness T4 of the organic insulating layer 112 may be greater than 0 and less than or equal to 0.4, for example, 0.35, 0.30, 0.25, or 0.2. A thinner organic insulating layer 112 (e.g., first thickness T1) at the first top edge 108a may lessen the impact on electromagnetic wave performance because it reduces dielectric loss caused by the organic insulating layer 112. On the other hand, a thicker organic insulating layer 112 (e.g., fourth thickness T4) at the second bottom edge 110b may reduce the amount of metal ions from the first electrode 110 diffusing into the modulation material 106.

[0109] In some embodiments, the fourth thickness T4 of the organic insulating layer 112 at the second bottom edge 110 b may be greater than the third thickness T3 of the organic insulating layer 112 at the second top edge 110 a. In some embodiments, the ratio of the third thickness T3 of the organic insulating layer 112 to the fourth thickness T4 of the organic insulating layer 112 may be greater than 0 and less than or equal to 0.4, for example, 0.35, 0.30, 0.25, or 0.2.

[0110] Furthermore, in some embodiments, the thickness of the organic insulating layer 112 on the top surface 110S1 of the first electrode 110 may be uniform. In other embodiments, the organic insulating layer 112 may have a third thickness T3′ on the top surface 110S1 outside the second top edge 110a. In some embodiments, the third thickness T3′ may be greater than or less than the third thickness T3 of the organic insulating layer 112 at the second top edge 110a.

[0111] The third thickness T3 at the second top edge 110a may be smaller than the fourth thickness T4 at the second bottom edge 110b or the third thickness T3 ′ on the top surface 110S1 , thereby reducing the consumption of electric field intensity at the second top edge 110a .

[0112] In some embodiments, the first opening 108p may include a central portion 108c, where the central portion 108c refers to a portion extending from a geometric center CT of the first opening 108p (eg, Figure 1C In other words, the center portion 108c may be a circular area with a specific radius, and the circular area surrounds the geometric center CT of the first opening 108p. The definition of the center portion 108c of various embodiments will be described in detail below. Figure 3A Further explanation.

[0113] Furthermore, the organic insulating layer 112 located at the central portion 108c of the first opening 108p may have a fifth thickness T5. In some examples, the fifth thickness T5 may be the minimum thickness of the organic insulating layer 112 located at the central portion 108c of the first opening 108p. In some embodiments, the second thickness T2 of the organic insulating layer 112 located at the first bottom edge 108b may be greater than the fifth thickness T5 of the organic insulating layer 112 located at the central portion 108c. In some embodiments, the ratio of the fifth thickness T5 of the organic insulating layer 112 to the second thickness T2 of the organic insulating layer 112 may be greater than 0 and less than or equal to 0.3, for example, 0.25, 0.2, 0.15, or 0.10.

[0114] Furthermore, if Figure 1B As shown, the thickness of the organic insulating layer 112 within the first opening 108p can gradually decrease toward the central portion 108c. As previously mentioned, the thinner thickness (e.g., the fifth thickness T5) of the organic insulating layer 112 in the central portion 108c can reduce dielectric loss caused by the organic insulating layer 112 (i.e., the amount of the organic insulating layer 112 that electromagnetic waves need to pass through).

[0115] Furthermore, in some embodiments, the second thickness T2 of the organic insulating layer 112 at the first bottom edge 108b may be greater than the first thickness T1 of the organic insulating layer 112 at the first top edge 108a. In some embodiments, the ratio of the first thickness T1 of the organic insulating layer 112 to the second thickness T2 of the organic insulating layer 112 may be greater than 0 and less than or equal to 0.3, for example, 0.25, 0.2, 0.15, or 0.10. The second thickness T2 at the first bottom edge 108b may be less than the first thickness T1 at the first top edge 108a, thereby reducing the dissipation of electric field strength at the second top edge 110a.

[0116] In addition, the first opening 108p may have a first width d1, and the second opening 110p may have a second width d2. In some embodiments, the second width d2 may be greater than the first width d1. According to some embodiments, the width of the opening may be the distance between two points on the bottom edge (e.g., the first bottom edge 108b) in the cross-sectional structure. In addition, the width of the opening may be the maximum distance between the first opening 108p or the second opening 110p on a plane (e.g., an XY plane) that is substantially perpendicular to the normal direction of the first substrate 102, for example, Figure 1C shown.

[0117] In some embodiments, the distance d3 between the second bottom edge 110b and the first top edge 108a may range from 0 micrometers (μm) to 50 micrometers (μm) (0μm≤d3≤50μm), for example, from 1 μm to 10 μm (1μm≤d3≤10μm), or from 1 μm to 5 μm (1μm≤d3≤5μm). It should be understood that if the distance d3 between the second bottom edge 110b and the first top edge 108a is too small, the expansion coefficients of the first substrate 102 and the first electrode 110 may be substantially different. On the other hand, if the distance d3 between the second bottom edge 110b of the second opening 110p and the first top edge 108a of the first opening 108p is too large, the dielectric loss caused by the buffer layer 108 may increase.

[0118] Next, please refer to Figure 1C , Figure 1C In some embodiments according to the present invention, Figure 1A A top view of area A. Figure 1B The cross-sectional structure of the electronic modulation device 10 is shown along Figure 1C It should be noted that for the sake of clarity, Figure 1C The organic insulating layer 112 is omitted.

[0119] like Figure 1C As shown, in some embodiments, the area of ​​the first opening 108p may be defined by the first bottom edge 108b, and the area of ​​the second opening 110p may be defined by the second bottom edge 110b, but the present invention is not limited thereto. In some embodiments, the area of ​​the second opening 110p may be larger than the area of ​​the first opening 108p in a top view. Furthermore, in some embodiments, the radius r of the central portion 108c may be greater than 0 and less than or equal to 50 microns, for example, less than or equal to 30 microns, 20 microns, or 10 microns.

[0120] Next, please refer to Figure 2A , Figure 2AThe cross-sectional structure diagram of the electronic modulation device 20 according to some other embodiments of the present invention is shown. It should be understood that the components or elements that are the same or similar to those in the previous description will be represented by the same or similar reference numerals, and their materials, manufacturing methods and functions are the same or similar to those described above, so these parts will not be described in detail in the following text. Figure 1A The electronic modulation device 10 shown in FIG. 1 is similar to the electronic modulation device 10 shown in FIG. 1 , and the difference between them is that the electronic modulation device 20 may not include the buffer layer 108 having the opening 108p. Figure 2A As shown, the electronic modulation device 20 may include a first electrode 110 disposed on a first substrate 102. In some embodiments, the first electrode 110 may be in contact with the first substrate 102. In some embodiments, the first substrate 102 may have a multi-layer structure. For example, the first substrate 102 may include a buffer layer (not shown). According to some embodiments, the buffer layer may be in contact with the first electrode 110, and the buffer layer may be patterned or unpatterned. In other examples, the first substrate 102 may include a buffer layer that is not in contact with the first electrode 110. More specifically, according to some embodiments, the first substrate 102 may include an unpatterned buffer layer.

[0121] The first electrode 110 may include a second opening 110 p , which may define a second top edge 110 a and a second bottom edge 110 b of the first electrode 110 (eg, Figure 2B In some embodiments, the second electrode 114 may overlap with the second opening 110 p.

[0122] Furthermore, the electronic modulation device 20 may include an organic insulating layer 112 disposed on the first electrode 110 and within the second opening 110p. In some embodiments, the organic insulating layer 112 may cover and contact the first electrode 110. In particular, the organic insulating layer 112 may have different thicknesses within the second opening 110p to reduce dielectric loss of electromagnetic waves or diffusion of metal ions into the modulation material.

[0123] Furthermore, according to some embodiments, the second electrode 114 may include an opening 114p. It should be understood that, according to some embodiments, the opening 114p (as shown in region D) may have a similar configuration to region C (eg, similar thickness of the organic insulating layer 112).

[0124] Please refer to Figure 2B , Figure 2B In some embodiments according to the present invention, Figure 2AThe organic insulating layer 112 at the second top edge 110a of the first electrode 110 may have a sixth thickness T6, and the organic insulating layer 112 at the second bottom edge 110b of the first electrode 110 may have a seventh thickness T7.

[0125] In some embodiments, the seventh thickness T7 of the organic insulating layer 112 at the second bottom edge 110 b may be greater than the sixth thickness T6 of the organic insulating layer 112 at the second top edge 110 a. In some embodiments, the ratio of the sixth thickness T6 of the organic insulating layer 112 to the seventh thickness T7 of the organic insulating layer 112 may be greater than 0 and less than or equal to 0.4, for example, 0.35, 0.30, 0.25, or 0.2.

[0126] Furthermore, the thickness of the organic insulating layer 112 on the top surface 110S1 of the first electrode 110 can be uniform. In some embodiments, the organic insulating layer 112 has a sixth thickness T6′ on the top surface 110S1 outside the second top edge 110a. In some embodiments, the sixth thickness T6′ can be greater than or less than the sixth thickness T6 of the organic insulating layer 112 at the second top edge 110a.

[0127] The sixth thickness T6 at the second top edge 110a may be smaller than the seventh thickness T7 at the second bottom edge 110b or the sixth thickness T6′ on the top surface 110S1 , thereby reducing consumption of electric field strength at the second top edge 110a .

[0128] Furthermore, the second opening 110p may include a central portion 110c. The organic insulating layer 112 located in the central portion 110c of the second opening 110p may have an eighth thickness T8. In some embodiments, the seventh thickness T7 of the organic insulating layer 112 located at the second bottom edge 110b may be greater than the eighth thickness T8 of the organic insulating layer 112 located at the central portion 110c. In some embodiments, the ratio of the eighth thickness T8 of the organic insulating layer 112 to the seventh thickness T7 of the organic insulating layer 112 may be greater than 0 and less than or equal to 0.3, for example, 0.25, 0.2, 0.15, or 0.10.

[0129] like Figure 2B As shown, the thickness of the organic insulating layer 112 within the second opening 110p can gradually decrease toward the central portion 110c. As previously mentioned, the thinner organic insulating layer 112 (e.g., the eighth thickness T8) in the central portion 110c can reduce dielectric loss of electromagnetic waves caused by the organic insulating layer 112.

[0130] Next, please refer to Figure 2C , Figure 2C In some embodiments according to the present invention, Figure 2A Schematic top view of region C in FIG. Figure 2B The cross-sectional structure of the electronic modulation device 20 is shown along Figure 2C It should be noted that for the sake of clarity, Figure 2C The organic insulating layer 112 is omitted.

[0131] like Figure 2C As shown, the area of ​​the second opening 110p can be defined by the second bottom edge 110b. In some embodiments, the radius r of the center portion 110c can be greater than 0 and less than or equal to 50 microns, for example, less than or equal to 30 microns, 20 microns, or 10 microns.

[0132] Next, please refer to Figures 3A-3H , Figure 3A-3H FIG. 1 is a top view schematic diagram of the first opening 108p of the first electrode 108 according to some embodiments of the present invention. Figures 3A-3H As shown, the first opening 108p can be patterned to have various shapes. In some embodiments, the first opening 108p can be rectangular in shape (e.g., Figure 3A As shown), square shape (as Figure 3B As shown), triangular shape (as Figure 3C As shown), pentagon, hexagon (as shown Figure 3D As shown), heptagon, octagon, circle (as shown Figure 3E As shown), elliptical (as Figure 3F As shown), irregular shapes (such as Figure 3G As shown), circular ring shape (as Figure 3H as shown), and other suitable shapes, but not limited thereto.

[0133] In addition, if Figure 3A and Figure 3B As shown, according to some embodiments, the geometric center CT of the first opening 108p having a rectangular shape or a square shape may be the intersection of two diagonal lines. In other embodiments, as shown in FIG. Figure 3C-3H As shown, for a first opening 108p having a shape other than a rectangle or a square, the geometric center CT of the first opening 108p may be the intersection of two diagonals of a minimum rectangle SQ (or square) that can surround the first opening 108p.

[0134] The central portion 108c refers to the area extending a specific distance (radius r) from the geometric center CT of the first opening 108p. In other words, the central portion 108c may be a circular area having a specific radius r, and the circular area surrounds the geometric center CT of the first opening 108p. In some embodiments, the radius r of the central portion 108c may be greater than 0 and less than or equal to 50 microns, for example, less than or equal to 30 microns, 20 microns, or 10 microns.

[0135] It should be noted that, according to some embodiments, the second opening 110p may also have a structure similar to the first opening 108p described above. In addition, the geometric center CT and the central portion 110c of the second opening 110p may be defined in the same manner as described above.

[0136] Next, please refer to Figure 4A-4G , Figure 4A-4G It shows a portion of the electronic modulation device 10 (eg, Figure 1B The cross-sectional structure diagram of the area E) shown in FIG. Figure 4A-4G As shown, according to different embodiments, the organic insulating layer 112 may have different profiles.

[0137] For example, the organic insulating layer 112 disposed within the first opening 108p or the second opening 110p may protrude toward the geometric center CT of the first opening 108p or the second opening 110p. In some embodiments, the organic insulating layer 112 may include a protruding portion 112t and a recessed portion 112r. In some embodiments, the protruding portion 112t may have a rounded shape, a flat shape, a curved shape, other suitable shapes, or a combination thereof. In some embodiments, the organic insulating layer 112 on the first substrate 102 may have a wave shape. Furthermore, the slope of the organic insulating layer 112 may vary according to the contours of the first electrode 110, the buffer layer 108, or the first substrate 102.

[0138] Next, please refer to Figures 5A-5F , Figures 5A-5F It shows a portion of the electronic modulation device 10 (eg, Figure 1B The cross-sectional structure diagram of the area E) shown in FIG. Figures 5A-5F As shown, according to different embodiments, the first electrode 110 and the buffer layer 108 may have different profiles.

[0139] For example, if Figures 5A-5CAs shown, according to some embodiments, the inner side 110s of the first electrode 110 may have a bent shape, a recessed shape, a wavy shape, other suitable shapes, or a combination thereof. The inner side 110s of the first electrode 110 may be a sidewall of the first electrode 110 adjacent to the second opening 110p.

[0140] In addition, if Figure 5D-5F As shown, according to some embodiments, the inner side surface 108s of the buffer layer 108 may have a curved shape, a concave shape, a wavy shape, other suitable shapes, or combinations thereof.

[0141] Next, please refer to Figures 6A-6F , Figures 6A-6F In some embodiments according to the present invention, Figure 1A FIG2 is an enlarged schematic diagram of region A during the manufacturing process of the electronic modulation device 10. It should be understood that additional operations may be provided before, during, and / or after the manufacturing process of the electronic modulation device 10. In some embodiments, some of the aforementioned stages may be replaced or eliminated. In some embodiments, the order of the operations may be interchanged.

[0142] Please refer to Figure 6A , providing a first substrate 102. A buffer layer 108 and a first electrode 110 may be sequentially formed on the first substrate 102. The first electrode 110 may be patterned to form a second opening 110p. The second opening 110p may expose a portion of the top surface 108S1 of the buffer layer 108.

[0143] In some embodiments, the buffer layer 108 may be formed by a chemical vapor deposition (CVD) process, a spin coating process, a printing process, or a combination thereof. The CVD process may include, but is not limited to, a low-pressure chemical vapor deposition (LPCVD) process, a low-temperature chemical vapor deposition (LTCVD) process, a rapid thermal chemical vapor deposition (RTCVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, or an atomic layer deposition (ALD) process.

[0144] In some embodiments, the first electrode 110 may be formed by using a chemical vapor deposition process, a physical vapor deposition process, an electroplating process, an electroless plating process, other suitable processes, or a combination thereof. The physical vapor deposition process may include, but is not limited to, a sputtering process, an evaporation process, a pulsed laser deposition process, and the like. In addition, in some embodiments, the second opening 110p may be formed by one or more photolithography processes and etching processes. In some embodiments, the photolithography process may include photoresist coating (e.g., spin coating), soft baking, hard baking, mask alignment, exposure, post-exposure baking, photoresist development, cleaning, drying, or other suitable processes. In some embodiments, the etching process includes a dry etching process or a wet etching process.

[0145] Next, please refer to Figure 6B The buffer layer 108 may be patterned to form a first opening 108p. The first opening 108p may expose a portion of the top surface 102A of the first substrate 102. Furthermore, the first opening 108p may be formed by one or more photolithography processes and etching processes as described above.

[0146] Next, please refer to Figure 6C An organic insulating layer 112 may be formed on the first electrode 110 and in the first opening 108 p and the second opening 110 p . In some embodiments, the organic insulating layer 112 may be formed on the first electrode 110 , the buffer layer 108 , and the first substrate 102 .

[0147] In some embodiments, the organic insulating layer 112 may be formed by using a chemical vapor deposition process, a spin coating process, a printing process, or a combination thereof.

[0148] Next, refer to Figure 6D and Figure 6EThe organic insulating layer 112 may be patterned by a photolithography process. As previously described, the photolithography process may include photoresist coating (e.g., spin coating), soft baking, hard baking, photomask alignment, exposure, post-exposure baking, photoresist development, cleaning, drying, or other suitable processes. Specifically, according to some embodiments, a photoresist layer 204 may be formed on the organic insulating layer 112, and a photomask 202 may be used in the photolithography process. In some embodiments, the photomask 202 may include a halftone photomask that provides multiple transmission levels.

[0149] like Figure 6E As shown, a portion of the photoresist layer 204 may be removed during the photolithography process to form a remaining photoresist layer 204', and the remaining photoresist layer 204' may be disposed within a portion of the first opening 108p and / or the second opening 110p. Figure 6F As shown, a portion of the organic insulating layer 112 and / or the remaining photoresist layer 204' may be removed to form a contoured organic insulating layer 112 (e.g., having different thicknesses within the first opening 108p and the second opening 110p). In some embodiments, the remaining photoresist layer 204' may be removed by an ashing process or an etching process.

[0150] Next, please refer to Figures 7A-7F , Figures 7A-7F In some other embodiments according to the present invention, Figure 1A FIG. 1 is an enlarged schematic diagram of region A during the manufacturing process of the electronic modulation device 10 . Figures 7A-7F The steps shown are the same as Figures 6A-6F The steps shown are similar, the difference between them is that, Figure 7D As shown, the photomask 202' used in the photolithography process may include a full-tone photomask that provides a single level of transparency. Figure 7E As shown, in this embodiment, the remaining photoresist layer 204' may be disposed on the top surface 110S1 of the first electrode 110. In some embodiments, depending on the profile of the final organic insulating layer 112, the remaining photoresist layer 204' may not be disposed within the first opening 108p and / or the second opening 110p.

[0151] Next, please refer to Figures 8A-8D , Figures 8A-8D In some embodiments according to the present invention, Figure 2A FIG2 is an enlarged schematic diagram of region C during the manufacturing process of the electronic modulation device 20. It should be understood that additional operations may be provided before, during, and / or after the manufacturing process of the electronic modulation device 20. In some embodiments, some of the stages described may be replaced or eliminated. In some embodiments, the order of the operations may be interchanged.

[0152] Please refer to Figure 8A , providing a first substrate 102. A first electrode 110 may be formed on the first substrate 102. The first electrode 110 may be patterned to form a second opening 110p. The second opening 110p may expose a portion of the top surface 102A of the first substrate 102. Subsequently, an organic insulating layer 112 may be formed on the first electrode 110 and within the second opening 110p. In some embodiments, the organic insulating layer 112 may be conformally formed on the first electrode 110 and the first substrate 102.

[0153] The steps of forming the first electrode 110 and the organic insulating layer 112 may be similar to the steps described above, and are not described again herein.

[0154] Next, please refer to Figure 8B and Figure 8C The organic insulating layer 112 may be patterned by a photolithography process. Specifically, according to some embodiments, a photoresist layer 204 may be formed on the organic insulating layer 112, and a photomask 202 may be used in the photolithography process. In some embodiments, the photomask 202 may include a halftone photomask that can provide multiple levels of transparency.

[0155] Please refer to Figure 8C , a portion of the photoresist layer 204 may be removed during the photolithography process to form a remaining photoresist layer 204', and the remaining photoresist layer 204' may be disposed within a portion of the second opening 110p. Figure 8D As shown, a portion of the organic insulating layer 112 and / or the remaining photoresist layer 204' may be removed to form a contoured organic insulating layer 112 (eg, having different thicknesses within the second opening 110p). In some embodiments, the remaining photoresist layer 204' may be removed by an ashing process or an etching process.

[0156] Next, please refer to Figures 9A-9D , Figures 9A-9D In some other embodiments according to the present invention, Figure 2A FIG. 1 is an enlarged schematic diagram of a region C during the manufacturing process of the electronic modulation device 20 . Figures 9A-9D The steps shown are the same as Figures 8A-8D The steps shown are similar, the difference between them is that, Figure 9B As shown, the photomask 202' used in the photolithography process may include a full photomask that provides a single level of transparency. Figure 9C As shown, in this embodiment, the remaining photoresist layer 204' may be disposed on the top surface 110S1 of the first electrode 110. In this embodiment, the remaining photoresist layer 204' may not be disposed in the second opening 110p.

[0157] In summary, according to some embodiments of the present invention, an electronic modulation device is provided, which may include organic insulating layers with different thicknesses in an opening defined by a buffer layer or an electrode, thereby reducing the dielectric loss of electromagnetic waves or preventing metal ions of the electrode from diffusing into the modulation material.

[0158] Although the embodiments of the present invention and their advantages have been described above, it should be understood that any person skilled in the art may make modifications, substitutions, and modifications without departing from the spirit and scope of the present invention. For example, it will be readily understood by those skilled in the art that many of the features, functions, steps, and materials described herein may be modified while remaining within the scope of the present invention. In addition, the scope of protection of the present invention is not limited to the processes, machines, manufactures, compositions of matter, devices, methods, and steps described in the specific embodiments described in the specification. Any person skilled in the art will understand from the disclosure of the present invention that any processes, machines, manufactures, compositions of matter, devices, methods, and steps currently or in the future developed can be used in accordance with the present invention as long as they can perform substantially the same functions or achieve substantially the same results as the embodiments described herein. Therefore, the scope of protection of the present invention includes the above-mentioned processes, machines, manufactures, compositions of matter, devices, methods, and steps. In addition, each claim constitutes a separate embodiment, and the scope of protection of the present invention also includes the combination of each claim and embodiment. The features between the embodiments of the present invention may be used in any combination as long as they do not violate the spirit of the invention or conflict with each other.

Claims

1. An electronic modulation device, characterized in that: include: a substrate; an electrode disposed on the substrate, wherein the electrode includes an opening, the opening defining a top edge and a bottom edge of the electrode, the opening having a center portion, and the bottom edge being closer to the center portion than the top edge; as well as an insulating layer disposed on the electrode and in the opening; wherein a thickness of the insulating layer at the bottom edge is greater than a thickness of the insulating layer at the central portion, and the thickness of the insulating layer at the bottom edge is greater than a thickness of the insulating layer at the top edge, The insulating layer in the opening has an arc-shaped top surface recessed toward the electrode.

2. The electronic modulation device according to claim 1, wherein A thickness of the insulating layer within the opening gradually decreases toward the central portion.

3. The electronic modulation device according to claim 1, wherein: A ratio of the thickness at the central portion of the insulating layer to the thickness at the bottom edge of the insulating layer is greater than 0 and less than or equal to 0.

3.

4. The electronic modulation device according to claim 1, wherein The ratio of a thickness at the top edge of the insulating layer to the thickness at the bottom edge of the insulating layer is greater than 0 and less than or equal to 0.

3.

5. The electronic modulation device according to claim 1, wherein: Also includes: A buffer layer is disposed between the substrate and the insulating layer.

6. The electronic modulation device according to claim 1, wherein: The central portion has a radius greater than 0 micrometers and less than or equal to 50 micrometers.

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