Apparatus for processing a substrate and method for processing a substrate

Abstract

The present inventive concept provides a substrate processing apparatus. The substrate processing apparatus includes a support unit configured to rotate and support a substrate; a liquid supply unit configured to supply a liquid to the substrate supported on the support unit; and an optical module for heating the substrate supported on the support unit, and wherein the support unit includes a teaching member having a grid showing a reference point matching a center of the support unit.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean patent applications filed on December 31, 2021, with application number 10-2021-0193590, and on May 11, 2022, with application number 10-2022-0058020, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The embodiments of the inventive concept described herein relate to a substrate processing apparatus and a substrate processing method, and more specifically, to a substrate processing apparatus and a substrate processing method that process a substrate by heating a substrate. Background Technology

[0004] Optical lithography processes used to form patterns on wafers include exposure processes. Exposure processes are operations performed beforehand to cut the semiconductor integrated material attached to the wafer into the desired pattern. Exposure processes can have various purposes, such as forming patterns for etching and forming patterns for ion implantation. In an exposure process, a mask (which is a kind of "frame") is used to draw a pattern on the wafer using light. When light is exposed to the semiconductor integrated material on the wafer (for example, the photoresist on the wafer), the chemical properties of the photoresist change according to the pattern formed by the light and the mask. When a developing solution is supplied to the photoresist, whose chemical properties change according to the pattern, the pattern is formed on the wafer.

[0005] To accurately execute the exposure process, the patterns formed on the mask must be precisely manufactured. The pattern formation must be checked to ensure it meets the process requirements. A large number of patterns are formed on a single mask. This means the operator needs to spend a significant amount of time inspecting all of the numerous patterns to inspect a single mask. Therefore, a monitoring pattern representing a group of patterns is formed on the mask. Additionally, anchor patterns representing multiple pattern groups are formed on the mask. The operator can estimate the quality of the patterns included in a pattern group by inspecting the monitoring pattern. Furthermore, the operator can estimate the quality of the pattern formed on the mask by inspecting the anchor patterns.

[0006] Furthermore, to improve the accuracy of mask inspection, ideally the critical dimensions of the monitoring pattern and the anchoring pattern should be the same. Additionally, a critical dimension correction process is performed to accurately correct the critical dimensions of the pattern formed on the mask.

[0007] Figure 1A normal distribution of a first critical dimension CDP1 and a second critical dimension CDP2 (critical dimension of an anchor pattern) of a monitor pattern with respect to a mask before performing a critical dimension correction process during a mask manufacturing process is shown. Also, the first critical dimension CDP1 and the second critical dimension CDP2 have a size smaller than a target critical dimension. Before performing the critical dimension correction process, there is an intentional deviation between the critical dimensions (CD, critical dimension) of the monitor pattern and the anchor pattern. And, by additionally etching the anchor pattern in the critical dimension correction process, the critical dimensions of the two patterns are made the same. In the process of over-etching the anchor pattern, if the anchor pattern is more over-etched than the monitor pattern, the critical dimensions of the monitor pattern and the anchor pattern are different, and thus the critical dimension of the pattern formed at the mask can not be accurately corrected. When the anchor pattern is additionally etched, accurate etching of the anchor pattern should be accompanied.

[0008] In a process of performing etching on the anchor pattern, a processing liquid is supplied to the mask, and the anchor pattern formed on the mask is heated by a laser. In order to accurately aim at and heat the anchor pattern, the center of a laser irradiation region must be accurately set. An optical module that irradiates the laser is moved with respect to the center of a default laser irradiation region. For example, a distance from the center of the irradiation region of the default laser to the anchor pattern formed on the mask to be processed is calculated, and based on this, the optical module is moved to an individual position and irradiates the laser. If the center of the default laser irradiation region is separated from the center of the mask, and if the optical module can be moved to a region where the anchor pattern exists to irradiate the laser, it can be moved to a position different from the actual anchor pattern position formed on the mask to irradiate the laser. In this case, since the laser cannot be irradiated to the actual anchor pattern, it is difficult to accurately etch the anchor pattern. SUMMARY

[0009] Embodiments of the present inventive concept provide a substrate processing apparatus and a substrate processing method for accurately etching a substrate.

[0010] Embodiments of the present inventive concept provide a substrate processing apparatus and a substrate processing method for accurately heating a specific region of a substrate.

[0011] Embodiments of the present inventive concept provide a substrate processing apparatus and a substrate processing method for accurately teaching a center of an irradiation region of a laser for accurately irradiating the laser to a specific region of a substrate.

[0012] The technical objects of the present inventive concept are not limited to the above technical objects, and other technical objects not mentioned above will be apparent to those skilled in the art from the following description.

[0013] A substrate processing apparatus is provided. The substrate processing apparatus includes a support unit configured to rotate and support a substrate, a liquid supply unit configured to supply a liquid to the substrate supported on the support unit, and an optical module for heating the substrate supported on the support unit, and wherein the support unit includes a teaching member having a grid showing a reference point matching a center of the support unit.

[0014] In an embodiment, a top surface of the teaching member is positioned below a bottom surface of the substrate supported on the support unit.

[0015] In an embodiment, the optical module includes a laser unit configured to irradiate a laser via a head nozzle to the substrate supported on the support unit, and an imaging unit configured to acquire an image by imaging a target object via the head nozzle.

[0016] In an embodiment, an irradiation direction of the laser irradiated via the head nozzle is coaxial with an imaging direction of the target object imaged via the head nozzle.

[0017] In an embodiment, the substrate processing apparatus further includes a controller for controlling the support unit and the optical module, and wherein the controller moves the head nozzle to a top side of the teaching member rotating at a constant speed, acquires an image including the grid by imaging the rotating teaching member, calculates a number of grids passing through a set region including a center of the image in an entire region of the image during a set time, and moves a center of the head nozzle to the reference point based on a change in the number of grids.

[0018] In an embodiment, the controller moves the head nozzle from a position having a large number of grids passing through the set region during the set time to a position having a relatively small number of grids.

[0019] In an embodiment, if the number of grids passing through the set region during the set time becomes 0, the controller stops the movement of the head nozzle.

[0020] In an embodiment, the support unit further includes a support pin for supporting the substrate, the teaching member is positioned at a center region including a center of the support unit, and the support pin is positioned at an edge region supporting the center region of the support unit.

[0021] In an embodiment, the teaching member can be detached from a top portion of the support unit.

[0022] In an embodiment, the teaching member is coupled to the top portion of the support unit.

[0023] In an embodiment, a center of the head nozzle, a center of the laser irradiated via the head nozzle, and a center of an imaging region of the imaging unit match each other.

[0024] The present inventive concept provides a substrate processing method. The substrate processing method includes processing a substrate at a processing space, and adjusting a center of laser light irradiated via a head nozzle of an optical module before or after processing the substrate, and wherein a center of an imaging region imaged via the head nozzle of the optical module on a target object corresponds to the center of the laser light when viewed from above, and wherein the head nozzle is moved while adjusting the center of the laser light so that the center of the imaging region corresponds to a center of a support unit supporting the substrate at the processing space when viewed from above.

[0025] In an embodiment, a grid showing a reference point corresponding to the center of the support unit is positioned at a top portion of the support unit.

[0026] In an embodiment, adjusting the center of the laser light is performed while the substrate is carried out of the processing space, and the head nozzle is moved so that the center of the imaging region corresponds to the reference point.

[0027] In an embodiment, adjusting the center of the laser light moves the head nozzle to a top side of a teaching member rotating at a constant speed, an image including a grid is acquired by imaging the rotating teaching member, a number of grids passing through a set region including a center of the image in an entire region of the image during a set time is calculated, and the center of the head nozzle is moved to the reference point based on a change in the number of grids.

[0028] In an embodiment, adjusting the center of the laser light moves the head nozzle from a position having a large number of grids passing through a set region during a set time to a position having a relatively small number of grids, and if the number of grids passing through the set region during the set time becomes 0, the movement of the head nozzle is stopped.

[0029] In an embodiment, processing the substrate includes supplying a liquid to the substrate supported by the support unit and heating the substrate supported on the support unit with the laser light, and adjusting the center of the laser light is performed before supplying the liquid or after heating the substrate.

[0030] In an embodiment, the substrate includes a mask having a plurality of cells, and the mask includes a first pattern formed in the plurality of cells, and a second pattern different from the first pattern formed outside a region in which the plurality of cells are formed, and wherein heating the substrate irradiates the laser light to the second pattern among the first pattern and the second pattern.

[0031] The present inventive concept provides a substrate processing apparatus for processing a mask having a plurality of cells. The substrate processing apparatus includes a support unit configured to support a mask having a first pattern formed within a plurality of cells and a second pattern different from the first pattern formed outside of an area in which the plurality of cells are formed, a liquid supply unit configured to supply a liquid to the mask supported on the support unit, and an optical module for heating the mask supported on the support unit, and wherein the support unit includes a support pin for supporting the mask and a teaching member having a grid showing a reference point matching the support unit, and wherein the optical module includes a head nozzle, a laser unit configured to irradiate a laser to the mask via the head nozzle, and an imaging unit configured to image a target object via the head nozzle, and wherein the teaching member is positioned at a center area including a center of the support unit, and the support pin is positioned at an edge area surrounding the center area of the support unit, and a top surface of the teaching member is positioned below a bottom surface of the mask supported on the support unit, and wherein an irradiation direction of the laser irradiated via the head nozzle is coaxial with an imaging direction of the target object imaged via the head nozzle, and a center of the laser irradiated via the head nozzle corresponds to a center of an imaging area of the target object imaged via the head nozzle when viewed from above.

[0032] In an embodiment, the substrate processing apparatus further includes a controller for controlling the support unit and the optical module, and wherein the controller moves the head nozzle to a top side of the teaching member rotating at a constant speed, acquires an image including the grid by imaging the rotating teaching member, calculates a number of grids passing through a set area including a center of the image in an entire area of the image during a set time, and stops the movement of the head nozzle until the number of grids passing through the set area during the set time becomes 0.

[0033] According to an embodiment of the present inventive concept, a substrate can be precisely etched.

[0034] According to an embodiment of the present inventive concept, a specific area of a substrate can be precisely heated.

[0035] According to an embodiment of the present inventive concept, a center of an irradiation area of a laser for precisely irradiating the laser to a specific area of a substrate can be precisely taught.

[0036] Effects of the present inventive concept are not limited to what has been described hereinabove merely by way of example and other advantages of the present inventive concept will be apparent from the following description taken in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0037] The above and other objects and features will become apparent from the following description of the embodiments, when taken in conjunction with the accompanying drawings, in which like reference characters refer to like parts throughout the several views.

[0038] Figure 1 The normal distribution of the critical dimensions of the monitoring pattern and the anchoring pattern is shown.

[0039] Figure 2 This is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention.

[0040] Figure 3 This schematically illustrates what it looks like from above. Figure 2 The substrate that has been processed in the chamber.

[0041] Figure 4 This schematically illustrates the formation when viewed from above. Figure 3 An enlarged view of an embodiment of the second pattern on the substrate.

[0042] Figure 5 This schematically illustrates the substrate supported on [the surface] when viewed from above. Figure 4 An implementation scheme for the chamber in the state of the support unit.

[0043] Figure 6 This schematically illustrates the situation when viewed from above, where the substrate is not supported. Figure 4 An implementation scheme for the chamber in the state of the support unit.

[0044] Figure 7 This schematically illustrates the effect when viewed from the side, according to Figure 4 The optical module of the implementation scheme.

[0045] Figure 8 This schematically illustrates the view from above, according to Figure 4 The optical module of the implementation scheme.

[0046] Figure 9 This schematically illustrates the view from the front, according to Figure 4 Another implementation of the support unit and teaching component.

[0047] Figure 10 It is a three-dimensional diagram of the teaching component.

[0048] Figure 11 This is a flowchart of a substrate processing method according to an embodiment of the present invention.

[0049] Figure 12 It is shown schematically. Figure 11 A block diagram showing the sequence of the teaching steps.

[0050] Figure 13 It shows in Figure 11 The state in which the head nozzle moves upward from the top side of the grid during the teaching steps.

[0051] Figure 14 It shows the time sequenceFigure 13 the image in a set region in the grid image acquired via the head nozzle that has moved upward.

[0052] Figure 15 a state in which the center of the imaging region moves to a reference point of the grid in the teaching step of the present embodiment. Figure 11

[0053] Figure 16 the image in a set region in the grid image acquired via the head nozzle that has moved upward. Figure 15

[0054] Figure 17 is a flowchart of a substrate processing method according to another embodiment of the inventive concept of the present embodiment. Figure 11

[0055]

SYMBOL EXPLANATION

[0056] 1: substrate processing apparatus; 2: first direction; 4: second direction; 6: third direction; 10: indexing module; 12: load port; 14: indexing frame; 20: processing module; 30: controller; 120: indexing robot; 122: indexing hand; 124: indexing track; 200: buffer unit; 300: transfer frame; 320: transfer robot; 322: hand; 324: transfer track; 400: chamber; 410: housing; 412: internal space; 414: exhaust hole; 420: support unit; 421: main body; 422: support pin; 423: support shaft; 424: driver; 425: teaching member; 426: body; 427: grid; 430: processing container; 431: processing space; 434: exhaust hole; 436: lifting / lowering member; 440: liquid supply unit; 441: nozzle; 441a: first nozzle; 441b: second nozzle; 441c: third nozzle; 442: fixed body; 443: rotation shaft; 444: rotation driver; 450: optical module; 460: housing; 470: moving unit; 472: driving unit; 474: shaft; 480: head nozzle; 490: teaching member; 492: body; 494: grid; 500: laser unit; 520: oscillation unit; 522: tilting member; 540: expander; 600: bottom reflection plate; 700: imaging unit; 800: illumination unit; 900: top reflection member; 920: first reflection plate; 940: second reflection plate; 960: top reflection plate; A: entire region; AA: set region; AK: reference mark; C: reference point; CDP1: first critical dimension; CDP2: second critical dimension; CE: cell; EP: exposure pattern; F: container; M: substrate; MC: center; P1: first pattern; P2: second pattern; S10: teaching step;

[0057] ​​​S20: processing step; S22: liquid processing step; S24: heating step; S26: rinsing step; S30: processing step; S32: liquid processing step; S34: heating step; S36: rinsing step; S40: teaching step; T1: first time point; T2: second time point. DETAILED DESCRIPTION

[0058] The present inventive concept can be variously modified and can have various forms, and specific embodiments thereof will be shown in the drawings and described in detail in the detailed description. However, the embodiments according to the present inventive concept are not intended to limit the specific disclosed forms, and it is to be understood that the present inventive concept includes all modifications, equivalents, and substitutions included in the spirit and technical scope of the present inventive concept. In the description of the present inventive concept, when a detailed description of the related known technology can obscure the essence of the present inventive concept, the description thereof can be omitted.

[0059] The terms used herein are only for describing specific embodiments and are not intended to limit the present inventive concept. As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, components, and / or elements, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, elements, and / or groups thereof. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. In addition, the term "exemplary" is intended to mean an example or illustration.

[0060] It is to be understood that, although the terms "first," "second," "third," and so on can be used herein to describe various components, elements, regions, layers and / or sections, these components, elements, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one component, element, region, layer or section from another region, layer or section. Thus, a first component, element, region, layer or section discussed below could be termed a second component, element, region, layer or section without departing from the teachings of the present inventive concept.

[0061] Embodiments of the present inventive concept will be described in detail below with reference to the accompanying drawings.

[0062] Embodiments of the present inventive concept will be described in detail below with reference to the accompanying drawings. Figures 2 to 17 Embodiments of the present inventive concept will be described in detail below with reference to the accompanying drawings. Figure 2 is a plan view schematically showing a substrate processing apparatus according to an embodiment of the present inventive concept.

[0063] Reference will now be made in detail to embodiments of the present inventive concept, examples of which are illustrated in the accompanying drawings.Figure 2 The substrate processing apparatus 1 includes an indexing module 10, a processing module 20, and a controller 30. According to an embodiment, the indexing module 10 and the processing module 20 can be arranged in a direction when viewed from above.

[0064] Hereinafter, the arrangement direction of the indexing module 10 and the processing module 20 is defined as a first direction 2, a direction perpendicular to the first direction 2 when viewed from above is defined as a second direction 4, and a direction perpendicular to a plane including the first direction 2 and the second direction 4 is defined as a third direction 6.

[0065] The indexing module 10 transfers the substrate M. The indexing module 10 transfers the substrate M between a container F storing the substrate M and the processing module 20. For example, the indexing module 10 transfers the substrate M, for which a predetermined process has been completed in the processing module 20, to the container F. For example, the indexing module 10 transfers the substrate, for which a predetermined process has been completed at the processing module 20, from the processing module 20 to the container F. The length direction of the indexing module 10 can be formed in the second direction 4.

[0066] The indexing module 10 can have a load port 12 and an indexing frame 14. The container F storing the substrate M is positioned on the load port 12. The load port 12 can be positioned on the opposite side of the processing module 20 with respect to the indexing frame 14. A plurality of load ports 12 can be provided in the indexing module 10. The plurality of load ports 12 can be arranged in a line in the second direction 4. The number of load ports 12 can be increased or decreased according to the processing efficiency of the processing module 20 and the floor space conditions, etc.

[0067] A sealed container such as a front opening unified pod (FOUP) can be used as the container F. The container F can be placed on the load port 12 by a transfer member (not shown) such as an overhead transfer machine, an overhead conveyor, or an automated guided vehicle, or by an operator.

[0068] The indexing frame 14 can have a transfer space for transferring the substrate M. An indexing robot 120 and an indexing track 124 can be provided at the transfer space of the indexing frame 14. The indexing robot 120 transfers the substrate M. The indexing robot 120 can transfer the substrate M between the indexing module 10 and a buffer unit 200 to be described later. The indexing robot 120 includes an indexing hand 122.

[0069] The substrate M can be placed on the indexing hands 122. The indexing hands 122 can be provided to be movable forward and backward, rotatable in a vertical direction (for example, the third direction 6), and movable in an axial direction. A plurality of indexing hands 122 can be provided to be placed at the transfer space of the indexing frame 14. The plurality of indexing hands 122 can be spaced apart from each other in the up / down direction. The plurality of indexing hands 122 can be independently movable forward and backward from each other.

[0070] The indexing track 124 is placed in the transfer space of the indexing frame 14. The indexing track 124 can be provided with a length direction thereof parallel to the second direction 4. The indexing robot 120 can be placed on the indexing track 124, and the indexing robot 120 can be movable along the indexing track 124. That is, the indexing robot can be movable forward and backward along the indexing track 124.

[0071] The controller 30 can include a process controller composed of a microprocessor (computer) that performs control of the substrate processing apparatus 1, a user interface such as a keyboard through which an operator can input a command to manage the substrate processing apparatus, and a display that displays the operation status of the substrate processing apparatus, and a memory unit that stores a processing recipe, that is, a process program to perform a processing process of the substrate processing apparatus 1 by controlling the process controller or a program to execute components of the substrate processing apparatus according to data and processing conditions. Further, the user interface and the memory unit can be connected to the process controller. The processing recipe can be stored in a storage medium of the memory unit, and the storage medium can be a hard disk, a portable disk such as a CD-ROM or a DVD, or a semiconductor memory such as a flash memory.

[0072] The controller 30 can control components of the substrate processing apparatus 1, so that the following substrate processing method can be performed. For example, the controller 30 can control components included in the chamber 400 mentioned below.

[0073] The processing module 20 can include a buffer unit 200, a transfer frame 300, and a chamber 400.

[0074] The buffer unit 200 has a buffer space. The buffer space serves as a space in which the substrate M brought into the processing module 20 and the substrate M brought out of the processing module 20 are temporarily reserved. The buffer unit 200 can be disposed between the indexing frame 14 and the transfer frame 300. The buffer unit 200 can be positioned at one end of the transfer frame 300. A slot (not shown) on which the substrate M is placed can be installed in the buffer unit 200. A plurality of slots (not shown) can be installed in the buffer unit 200. The plurality of slots (not shown) can be vertically spaced apart from each other.

[0075] In the buffer unit 200, a front surface and a back surface are opened. The front surface can be a surface facing the indexing frame 14. The back surface can be a surface facing the transfer frame 300. The indexing robot 120 can access the buffer unit 200 via the front surface. The transfer robot 320 to be described later can access the buffer unit 200 via the back surface.

[0076] The transfer frame 300 provides a space for transferring the substrate M between the buffer unit 200 and the chamber 400. The transfer frame 300 can have a longitudinal direction in a direction horizontal to the first direction 2. The chamber 400 can be arranged on a side surface of the transfer frame 300. The transfer frame 300 and the chamber 400 can be arranged in the second direction 4. According to an embodiment, the chamber 400 can be arranged on both side surfaces of the transfer frame 300. The chambers 400 arranged on one side of the transfer frame 300 can have an array of A x B (A, B are natural numbers greater than 1 or 1) in the first direction 2 and the second direction 4, respectively.

[0077] The transfer frame 300 has a transfer robot 320 and a transfer track 324. The transfer robot 320 transfers the substrate M. The transfer robot 320 transfers the substrate M between the buffer unit 200 and the chamber 400. The transfer robot 320 includes a hand 322 on which the substrate M is placed. The substrate M can be placed on the hand 322. The hand 322 can be movable forward and backward, can be rotatable in a vertical direction (e.g., the third direction 6) as an axis, and can be movable in an axial direction (e.g., the third direction 6). The transfer robot 320 can include a plurality of hands 322. The plurality of hands 322 can be arranged to be spaced apart in the vertical direction. Further, the plurality of hands 322 can be independently movable forward and backward from each other.

[0078] The transfer track 324 can be formed in the transfer frame 300 in a direction horizontal to the longitudinal direction of the transfer frame 300. For example, the longitudinal direction of the transfer track 324 can be a direction horizontal to the first direction 2. The transfer robot 320 is placed on the transfer track 324, and the transfer robot 320 can be movable forward and backward along the transfer track 324.

[0079] Figure 3 schematically shows a substrate processed in a chamber, Figure 2 from above, and a substrate processed in a chamber Figure 3 A substrate M processed in the chamber 400 according to an embodiment of the present inventive concept will be described in detail below.

[0080] A substrate to be processed in the chamber 400 Figure 3The object processed in the chamber 400 shown in the middle can be any one of a wafer, a glass, and a photomask. According to an embodiment of the present inventive concept, the substrate M processed in the chamber 400 can be a photomask, which is a "frame" used during an exposure process. For example, the substrate M according to an embodiment can have a rectangular shape. Reference marks AK, a first pattern P1, and a second pattern P2 can be formed on the substrate M.

[0081] At least one reference mark AK can be formed on the substrate M. For example, the reference marks AK are a number corresponding to a number of corners of the substrate M, and can be formed in a corner region of the substrate M.

[0082] The reference marks AK can be used for aligning the substrate M. Also, the reference marks AK can be marks for determining whether the support unit 420 to be described later is deformed during a support process. In addition, the reference marks AK can be used for deriving position information of the substrate M supported by the support unit 420. For example, the imaging unit 700 to be described later can acquire an image including the reference marks AK by imaging the reference marks AK, and transmit the acquired image to the controller 30. The controller 30 can detect an accurate position of the substrate M, whether the substrate is deformed, etc. by analyzing the image including the reference marks AK. Also, when the transfer robot 320 transfers the substrate M, the reference marks AK can be used for deriving position information of the substrate M. Thus, the reference marks AK can be defined as so-called alignment keys.

[0083] A unit CE can be formed on the substrate M. At least one unit can be formed on the substrate. A plurality of patterns can be formed in each of a plurality of units CE. The patterns formed in each unit CE can include an exposure pattern EP and a first pattern P1. The patterns (for example, the first pattern P1 and the exposure pattern EP) formed at each unit CE can be defined as one pattern group.

[0084] The exposure pattern EP can be used to form an actual pattern on the substrate M. The first pattern P1 can be a pattern representing the exposure pattern EP formed in one unit CE. If a plurality of units CE are formed on the substrate M, a plurality of first patterns P1 can be provided at the units CE. For example, one first pattern P1 can be formed in each of a plurality of units CE. However, the present inventive concept is not limited thereto, and a plurality of first patterns P1 can be formed in one unit CE.

[0085] The first pattern P1 can have a shape in which some of the exposure patterns EP are combined. The first pattern P1 can be defined as a so-called monitoring pattern. An average value of critical dimensions of a plurality of first patterns P1 can be defined as a critical dimension monitoring macro (CDMM).

[0086] If an operator inspects the first pattern P1 formed in any one of the cells CE via a scanning electron microscope (SEM), it is possible to estimate whether the shape of the exposure pattern EP formed in any one of the cells CE is good. Thus, the first pattern P1 can be used as an inspection pattern. Unlike the above-described embodiments, the first pattern P1 can be any one of the exposure patterns EP that participate in the actual exposure process. Alternatively, the first pattern P1 can be an inspection pattern and can be a pattern that does not participate in the actual exposure process.

[0087] The second pattern P2 can be formed outside the cells CE formed on the substrate M. For example, the second pattern P2 can be formed in an outside region of a region in which a plurality of cells CE are formed. The second pattern P2 can be a pattern that represents the exposure pattern EP formed on the substrate M. The second pattern P2 can be defined as an anchor pattern. At least one or more second patterns P2 can be formed. A plurality of second patterns P2 can be formed on the substrate M. The plurality of second patterns P2 can be arranged in a combination of series and / or parallel. For example, five second patterns P2 can be formed on the substrate M, and the five second patterns P2 can be arranged in a combination of two columns and three columns. Alternatively, the plurality of second patterns P2 can have a shape in which some of the first patterns P1 are combined.

[0088] If an operator inspects the second pattern P2 via a scanning electron microscope (SEM), it is possible to estimate whether the shape of the exposure pattern EP formed on one substrate M is good. Thus, the second pattern P2 can be used as an inspection pattern. The second pattern P2 can be an inspection pattern that does not participate in the actual exposure process. Further, the second pattern P2 can be a pattern used for setting process conditions of an exposure apparatus.

[0089] The chamber 400 according to an embodiment of the inventive concept is explained below. Further, a processing process performed in the chamber 400 to be described later can be a Fine Critical Dimension Correction (FCC) in a mask manufacturing process for an exposure process.

[0090] Further, the substrate M processed in the chamber 400 can be a substrate on which a pre-process has been performed. Critical dimensions of the first pattern P1 and the second pattern P2 formed on the substrate M brought into the chamber 400 can be different from each other. According to an embodiment, the critical dimension of the first pattern P1 can be relatively larger than the critical dimension of the second pattern P2. For example, the critical dimension of the first pattern P1 can have a first width (e.g., 69 nm), and the critical dimension of the second pattern P2 can have a second width (e.g., 68.5 nm).

[0091] Figure 4 Schematic illustration Figure 2 The implementation plan for the chamber. Figure 5 This schematically illustrates when the substrate is made of Figure 4 The state of the chamber when viewed from above, supported by the support unit. Figure 6 This schematically illustrates when the substrate is not made by Figure 4 The state of the chamber when viewed from above, supported by the support unit.

[0092] refer to Figures 4 to 6 The chamber 400 may include a housing 410, a support unit 420, a processing container 430, a liquid supply unit 440, and an optical module 450.

[0093] The housing 410 may have a substantially rectangular shape. The housing 410 has an internal space 412. The support unit 420, the processing container 430, the liquid supply unit 440, and the optical module 450 may be positioned within the internal space 412.

[0094] An opening (not shown) can be formed at the housing 410 through which the substrate M extends. The opening (not shown) can be selectively opened and closed by a door assembly (not shown). The inner wall surface of the housing 410 can be coated with a material that is highly corrosion resistant to the liquid supplied by the liquid supply unit 440, which will be described later.

[0095] An vent 414 is formed on the bottom surface of the housing 410. The vent 414 is connected to a pressure-reducing member (not shown). For example, the pressure-reducing member (not shown) can be a pump. The vent 414 discharges the atmosphere from the internal space 412. In addition, the vent 414 discharges byproducts such as particles generated in the internal space 412 to the outside of the internal space 412.

[0096] The support unit 420 is positioned within the internal space 412. The support unit 420 supports the substrate M. Furthermore, the support unit 420 rotates the substrate M. The support unit 420 may include a main body 421, a support pin 422, a support shaft 423, a driver 424, and a teaching member 425.

[0097] The main body 421 can typically have a plate shape. The main body 421 can have a plate shape with a predetermined thickness. When viewed from above, the top surface of the main body 421 can have a substantially circular shape. The top surface of the main body 421 can have a relatively larger area than the top and bottom surfaces of the substrate M.

[0098] Support pin 422 supports substrate M. Support pin 422 can support substrate M to separate the bottom surface of substrate M from the top surface of body 421. When viewed from above, support pin 422 can be positioned at the edge region of body 421. The edge region of body 421 can be defined as the region surrounding a central region including the center of body 421. Support unit 420 can include multiple support pins 422. For example, there can be four support pins 422. The multiple support pins 422 can each be arranged at one of the corner regions of substrate M having a rectangular shape.

[0099] When viewed from above, the support pin 422 may have a substantially circular shape. The support pin 422 may have a shape in which a portion corresponding to a corner region of the substrate M is recessed downwards. The support pin 422 may have a first surface and a second surface. For example, the first surface may support the bottom end of the corner region of the substrate M. Furthermore, the second surface may face the side end of the corner region of the substrate M. Therefore, if the substrate M rotates, the second surface may restrict lateral separation of the substrate M.

[0100] The support shaft 423 has its length in the vertical direction. The support shaft 423 is connected to the body 421. The support shaft 423 is connected to the bottom portion of the body 421. The support shaft 423 can be moved in the vertical direction (e.g., in the third direction 6) by a driver 424. Furthermore, the support shaft 423 can be rotated by the driver 424. The driver 424 can be a motor. If the driver 424 rotates the support shaft 423, the body 421 connected to the support shaft 423 can rotate. Therefore, the substrate M can rotate together with the rotation of the body 421 via the support pin 422.

[0101] The teaching component 425 can teach the center position of the irradiated area of ​​the laser irradiated by the head nozzle 480, which will be described later. In addition, the teaching component 425 can teach the center position of the imaging area of ​​the target object imaged by the head nozzle 480.

[0102] like Figure 6 As shown, the teaching component 425 may include a body 426 and a grid 427. The body 426 may be coupled to the main body 421. The body 426 may be coupled to the top portion of the main body 421. When viewed from above, the body 426 may be arranged in a central region including the center of the main body 421. According to an embodiment, the body 426 and the main body 421 may be integrally formed. The grid 427 may be disposed on the top surface of the body 426. According to an embodiment, the body 426 may have a substantially cylindrical shape. However, the inventive concept is not limited thereto, and the body 426 may be deformed into various shapes.

[0103] The grid 427 can be positioned on the top surface of the body 426. The grid 427 can be a plate on which a grid pattern is engraved. A reference point C can be located at the center of the grid 427. When viewed from above, the reference point C can be positioned to overlap with the center of the body 421. Furthermore, when the substrate M is placed on the support pin 422, the reference point C can overlap with the center of the substrate M. That is, when viewed from above, the center of the reference point C, the center of the body 421, and the center of the substrate M supported by the support unit 420 can overlap each other. The grid 427 and the body 426 can be integrally formed. For example, the top end of the grid 427 can have the same height as the top end of the body 426.

[0104] like Figure 4 As shown, with the substrate M placed on the support pin 422, the substrate M and the grid 427 can be spaced apart from each other. According to an embodiment, with the substrate M placed on the support pin 422, the bottom surface of the substrate M can be positioned above the top surface of the grid 427. That is, if the substrate M is placed on the support pin 422, the grid 427 and the body 426 can be arranged in a position that will not interfere with the substrate M.

[0105] The processing container 430 may have a cylindrical shape with an open top. The internal space of the processing container 430 with an open top serves as a processing space 431. For example, the processing space 431 may be a space in which liquid processing and / or heat processing are performed on the substrate M. The processing container 430 may prevent the liquid supplied to the substrate M from scattering onto the housing 410, the liquid supply unit 440, and the optical module 450.

[0106] An opening for inserting a support shaft 423 can be formed on the bottom surface of the processing container 430. Viewed from above, the opening may overlap with the support shaft 423. Additionally, a discharge hole 434 can be formed on the bottom surface of the processing container 430, through which liquid supplied by the liquid supply unit 440 can be discharged to the outside. The liquid discharged through the discharge hole 434 can be transferred to an external regeneration system (not shown). Side surfaces of the processing container 430 can extend upwards from the bottom surface of the processing container 430. The top end of the processing container 430 can be inclined. For example, the top end of the processing container 430 can extend upwards relative to the ground toward the substrate M supported by the support unit 420.

[0107] The processing container 430 can be connected to the lifting / lowering member 436. The lifting / lowering member 436 can move the processing container 430 in a vertical direction (e.g., upward in the third direction 6). When the substrate M is subjected to liquid treatment or heating, the lifting / lowering member 436 can move the processing container 430 upward. In this case, the top end of the processing container 430 can be positioned relatively higher than the top end of the substrate M supported by the support unit 420. When the substrate M is brought into the internal space 412, and when the substrate M is brought out of the internal space 412, the lifting / lowering member 436 can move the processing container 430 downward. In this case, the top end of the processing container 430 can be positioned relatively lower than the top end of the support unit 420.

[0108] Liquid supply unit 440 supplies liquid to substrate M. Liquid supply unit 440 can supply processing liquid to substrate M. For example, the processing liquid can be an etching liquid or a rinsing liquid. The etching liquid can be a chemical. The etching liquid can etch patterns formed on substrate M. The etching liquid can be called an etchant. The etchant can be ammonia, water, and a mixture of liquids including additives and hydrogen peroxide. The rinsing liquid can clean substrate M. The rinsing liquid can be provided as a known chemical liquid.

[0109] The liquid supply unit 440 may include a nozzle 441, a fixed body 442, a rotating shaft 443, and a rotating driver 444.

[0110] Nozzle 441 supplies liquid to substrate M supported by support unit 420. One end of nozzle 441 can be connected to fixture 442, while the other end of nozzle 441 can extend in a direction away from fixture 442. According to an embodiment, the other end of nozzle 441 can be bent and extended at a predetermined angle in a direction toward substrate M supported by support unit 420.

[0111] like Figure 5 and Figure 6 As shown, nozzle 441 may include a first nozzle 441a, a second nozzle 441b, or a third nozzle 441c. The first nozzle 441a, the second nozzle 441b, and the third nozzle 441c can supply different types of liquids to the substrate M.

[0112] For example, one of the first nozzle 441a, the second nozzle 441b, and the third nozzle 441c can supply the chemicals in the aforementioned processing liquid to the substrate M. Furthermore, the first nozzle 441a, the second nozzle 441b, and the third nozzle 441c can supply rinsing liquid from the aforementioned processing liquid to the substrate. The other of the first nozzle 441a, the second nozzle 441b, and the third nozzle 441c can supply chemicals of a different type or concentration than those supplied by any one of the first nozzles 441a, the second nozzle 441b, and the third nozzle 441c.

[0113] like Figure 4 As shown, a fixture 442 fixes and supports the nozzle 441. The fixture 442 is connected to a rotating shaft 443. One end of the rotating shaft 443 is connected to the fixture 442, and the other end is connected to a rotary driver 444. The rotating shaft 443 has a longitudinal direction in the vertical direction (e.g., in the third direction 6). The rotary driver 444 rotates the rotating shaft 443. If the rotary driver 444 rotates the rotating shaft 443, the fixture 442 connected to the rotating shaft 443 can rotate based on the vertical axis. Therefore, the discharge port of the nozzle 441 can move between a liquid supply position and a standby position. The liquid supply position can be the position where the liquid supply unit 440 supplies liquid to the substrate M supported by the support unit 420. The standby position can be a position where liquid is not supplied to the substrate M, but is kept on standby. For example, the standby position can be a position that includes the outer area of ​​the processing container 430. An in-situ port (not shown) can be set at the spare location of nozzle 441, where nozzle 441 can be used as a spare.

[0114] Figure 7 It is an illustrative representation based on Figure 4 A side view of the optical module of the implementation scheme. Figure 8 It is an illustrative representation based on Figure 4 A top view of the optical module of the implementation scheme. The following will refer to... Figures 4 to 8 A detailed description of the embodiments based on the present invention is provided.

[0115] like Figure 4 As shown, the optical module 450 is positioned within the internal space 412. The optical module 450 heats the substrate M. The optical module 450 can heat the substrate M supplied with liquid. According to an embodiment, the optical module 450 can irradiate a region with a laser, thereby forming a specific pattern over the entire region of the substrate M with residual liquid. For example, the optical module 450 can heat the substrate M by irradiating it with a laser. Figure 3The second pattern P2 shown is heated to form the second pattern P2. The temperature of the region where the second pattern P2 is formed by laser irradiation may rise. Therefore, the degree of etching by the liquid in the region where the second pattern P2 is formed can be relatively higher than in other regions of the substrate M.

[0116] Furthermore, the optical module 450 can image the area irradiated by the laser. For example, the optical module 450 can acquire an image including the area irradiated by the laser from the laser unit 500, which will be described later.

[0117] The optical module 450 may include a housing 460, a moving unit 470, a head nozzle 480, a laser unit 500, a bottom reflector 600, an imaging unit 700, an illumination unit 800, and a top reflector 900.

[0118] like Figure 7 and Figure 8 As shown, housing 460 has mounting space therein. The mounting space of housing 460 can have an externally sealed environment. Within the mounting space of housing 460, a portion of the head nozzle 480, laser unit 500, imaging unit 700, and illumination unit 800 can be positioned. Housing 460 protects the laser unit 500, imaging unit 700, and illumination unit 800 from byproducts or scattering liquids generated during the process. The head nozzle 480, laser unit 500, imaging unit 700, and illumination unit 800 can be modularized by housing 460.

[0119] An opening may be formed at the bottom of the housing 460. A head nozzle 480, described later, can be inserted into the opening formed in the housing 460. When the head nozzle 480 is inserted into the opening of the housing 460, the bottom portion of the head nozzle 480 may protrude from the bottom end of the housing 460, as... Figure 4 and Figure 7 As shown in the image.

[0120] like Figure 4 As shown, the moving unit 470 is connected to the housing 460. The moving unit 470 moves the housing 460. The moving unit 470 may include a drive unit 472 and a shaft 474.

[0121] The driving unit 472 can be a motor. The driving unit 472 is connected to the shaft 474. The driving unit 472 can move the shaft 474 vertically and horizontally. In addition, the driving unit 472 can rotate the shaft 474 about the third direction 6. Although not shown, the moving unit 470 according to an embodiment can include a plurality of driving units. Any one of the plurality of driving units can be a rotation motor for rotating the shaft 474, another one of the plurality of driving units can be a linear motor for horizontally moving the shaft 474, and still another one of the plurality of driving units can be a linear motor for vertically moving the shaft 474.

[0122] The shaft 474 is coupled to the housing 460. When the shaft 474 is moved in a horizontal direction or rotated by the driving unit 472, the position of the head nozzle 480 inserted into the opening formed in the housing 460 can also be changed in a horizontal plane. In addition, as the shaft 474 is moved in a vertical direction, the height of the head nozzle 480 can be changed in the horizontal plane.

[0123] As shown in FIGS. 1 and 2, the head nozzle 480 can have an objective lens and a lens barrel. A laser unit 500 to be described later can irradiate laser light to a target object via the head nozzle 480. When viewed from above, the laser light irradiated via the head nozzle 480 can have a substantially flat top shape. Figure 7 In addition, an imaging unit 700 to be described later can image a target object via the head nozzle 480. For example, the imaging unit 700 can image a region to which laser light is irradiated of the target object and can acquire an image including the laser light. In addition, light transmitted from an illumination unit 800 to be described later can be transmitted to the target object via the head nozzle 480. According to an embodiment, the target object can be a substrate M supported by the support unit 420. In addition, the target object can be the grid 427.

[0124] As shown in FIGS. 1 and 2, the head nozzle 480 can have an objective lens and a lens barrel. A laser unit 500 to be described later can irradiate laser light to a target object via the head nozzle 480. When viewed from above, the laser light irradiated via the head nozzle 480 can have a substantially flat top shape.

[0125] Figure 5 and Figure 6 As shown in FIGS. 1 and 2, the head nozzle 480 can be moved between a process position and a standby position by the moving unit 470.

[0126] According to an embodiment, the process position can be a top side of the second pattern P2 formed on the substrate M supported by the support unit 420. For example, the process position can be a position in which the center of a region formed on the second pattern P2 of the substrate M supported by the support unit 420 when viewed from above overlaps with the center of the head nozzle 480.

[0127] According to an embodiment, the teaching position can be a top side of the teaching member 425. For example, the teaching position can be a position in which the grid 427 overlaps with the head nozzle 480 when viewed from above.

[0128] ​According to the implementation plan, the backup location can be an external area of ​​the processing container 430. The undisplayed in-situ port can be located in the backup location. According to the implementation plan, maintenance operations to adjust the state of the optical module 450 can be performed in the backup location.

[0129] Figure 7 The laser unit 500 shown irradiates a target object with a laser via a head nozzle 480. For example, if the head nozzle 480 is positioned in a process location, the laser unit 500 irradiates the substrate M supported by the support unit 420 with a laser via the head nozzle 480.

[0130] like Figure 7 As shown, the laser unit 500 may include an oscillation unit 520 and an expander 540. The oscillation unit 520 oscillates the laser. The oscillation unit 520 can cause the laser to oscillate toward the expander 540. The output of the laser oscillating from the oscillation unit 520 can be varied according to process requirements.

[0131] A tilting member 522 can be installed in the oscillation unit 520. The tilting member 522 can change the oscillation direction of the laser oscillated by the oscillation unit 520. According to an embodiment, the tilting member 522 can be a motor. The tilting member 522 can rotate the oscillation unit 520 based on an axis.

[0132] Expander 540 may include multiple lenses (not shown). Expander 540 can change the divergence angle of the laser oscillating from oscillating unit 520 (oscillator) by changing the spacing between the multiple lenses. Therefore, expander 540 can change the diameter of the laser oscillating from oscillating unit 520. For example, expander 540 can enlarge or decrease the diameter of the laser oscillating from oscillating unit 520. The diameter of the laser changes at expander 540, thus changing the profile of the laser. According to an embodiment, expander 540 can be configured as a variable beam expander telescope (BET). The laser whose diameter is changed in expander 540 is transmitted to bottom reflector 600.

[0133] Figure 7 The bottom reflector 600 shown is positioned along the path of the laser oscillating from the oscillating unit 520. According to an embodiment, when viewed from the side, the bottom reflector 600 can be positioned at a height corresponding to the oscillating unit 520 and the expander 540. Furthermore, when viewed from above, the bottom reflector 600 can be positioned to overlap with the head nozzle 480. Additionally, when viewed from above, the bottom reflector 600 can be positioned to overlap with the top reflector 960, which will be described later. The bottom reflector 600 can be arranged below the top reflector 960. The bottom reflector 600 can be tilted at the same angle as the top reflector 960.

[0134] The bottom reflector 600 can alter the path of the laser oscillating from the oscillation unit 520. According to an embodiment, the bottom reflector 600 can change the path of a laser moving in the horizontal direction to a vertically downward direction. The laser with its path changed to a vertically downward direction by the bottom reflector 600 can be transmitted to the head nozzle 480. For example, the laser oscillating from the oscillation unit 520 can sequentially pass through the expander 540, the bottom reflector 600, and the head nozzle 480 to irradiate the second pattern P2 formed on the substrate M.

[0135] Figure 7 and Figure 8 The imaging unit 700 shown can image a laser beam irradiated onto a target object. The imaging unit 700 can image the area irradiated by the laser. The imaging unit 700 can acquire an image of the target object including the area irradiated by the laser. As shown, the target object can be a substrate M supported by the support unit 420 or a grid 427.

[0136] Imaging unit 700 can be a camera module. According to an embodiment, imaging unit 700 can be a camera module in which the focus is automatically adjusted. Alternatively, imaging unit 700 can be a camera module for illuminating visible light or far-infrared light. The image acquired by imaging unit 700 can be video and / or photograph. The imaging direction of imaging unit 700 can be directed towards top reflector 960. The imaging direction of imaging unit 700 can be changed from a horizontal direction to a vertically downward direction via top reflector 960. For example, the imaging direction of imaging unit 700 can be changed via top reflector 960 to face towards head nozzle 480. Therefore, imaging unit 700 can acquire an image of the target object by imaging the target object via head nozzle 480.

[0137] Figure 8 The illumination unit 800 shown transmits illumination to the target object, allowing the imaging unit 700 to easily acquire an image of the target object. The light transmitted by the illumination unit 800 can face the first reflector 920, which will be described later. The light transmitted to the first reflector 920 can be sequentially moved via the second reflector 940 and the top reflector 960 to be transmitted to the target object via the head nozzle 480.

[0138] The top reflective member 900 may include a first reflective plate 920, a second reflective plate 940, and a top reflective plate 960.

[0139] The first reflection plate 920 and the second reflection plate 940 can be installed at heights corresponding to each other. The first reflection plate 920 can change the direction of light transmitted by the illumination unit 800. The first reflection plate 920 can reflect the received light in a direction toward the second reflection plate 940. The second reflection plate 940 can change the direction of light transmitted by the first reflection plate 920. The second reflection plate 940 can reflect the light received from the first reflection plate 920 in a direction toward the top reflection plate 960.

[0140] When viewed from above, the top reflection plate 960 is arranged to overlap the bottom reflection plate 600. The top reflection plate 960 can be disposed above the bottom reflection plate 600. The top reflection plate 960 and the bottom reflection plate 600 can be inclined at the same angle as described above.

[0141] The top reflection plate 960 can change the imaging direction of the imaging unit 700 and the light transmission direction of the illumination unit 800 to a direction toward the head nozzle 480. Accordingly, the imaging direction of the imaging unit 700 and the illumination direction of the illumination unit 800 can be coaxial with the irradiation direction of the laser, the action path of which has been changed to a direction toward the head nozzle 480 by the bottom reflection plate 600. In other words, when viewed from above, the direction in which the laser unit 500 irradiates the laser to the target object via the head nozzle 480, the direction in which the imaging unit 700 images the target object via the head nozzle 480, and the direction in which the illumination unit 800 transmits light to the target object can overlap.

[0142] Unlike the above-described embodiment, a drying chamber (not shown) can be further arranged on one side of the transfer frame 300. In the drying chamber (not shown), the substrate on which liquid processing and / or thermal processing is completed can be dried in the chamber 400. The chamber 400 can be arranged on the side of the transfer frame 300 that is relatively adjacent to the buffer unit 200 than the drying chamber (not shown).

[0143] A modified embodiment of a chamber according to an embodiment of the inventive concept will be described below. Since the chamber according to the following embodiment is substantially the same as or similar to the configuration of the above-described chamber except for otherwise described, a description of redundant contents will be omitted.

[0144] Figure 9 A front view of a support unit and a teaching member according to another embodiment of the inventive concept is schematically shown. Figure 4 A front view of a support unit and a teaching member according to another embodiment of the inventive concept is schematically shown. Figure 10 A perspective view of a teaching member of the inventive concept is shown. Figure 9 A perspective view of a teaching member of the inventive concept is shown.

[0145] Reference is made to Figure 9A groove can be formed in a central region including the center of the body 421. For example, the top surface of the central region of the body 421 can be stepped down from the top surface of an edge region surrounding the central region of the body 421. A teaching member 490 to be described later can be inserted into the central region of the body 421. The support pins 422 can be disposed in the edge region of the body 421.

[0146] Referring to Figure 9 and Figure 10 The teaching member 490 can include a body 492 and a grid 494. The body 492 can have a shape corresponding to the groove formed in the body 421. The body 492 can be inserted into the groove formed in the body 421. The body 492 can be detached from the body 421. A fixing clamp not shown can be mounted on the body 492. The fixing clamp can fix the body 492 to the body 421. However, the inventive concept is not limited thereto, and various known methods can be used to fix the body 492 to the body 421 after the body 492 is inserted into the groove formed in the body 421.

[0147] The height from the top surface to the bottom surface of the body 492 can be greater than the height of the groove formed in the central region of the body 421. Also, as the body 492 is inserted into the groove of the body 421, the top portion of the body 492 can protrude upward from the top surface of the edge region of the body 421. Also, in a state where the body 492 is inserted into the groove of the body 421, the top end of the body 492 can be positioned below the top end of the support pins 422. Also, in a state where the body 492 is inserted into the groove of the body 421 and the substrate M is placed on the support pins 422, the top end of the body 492 can be positioned below the bottom surface of the substrate M.

[0148] The grid 494 can be positioned on the top surface of the body 492. The top end of the grid 494 can have the same height as the top end of the body 492. Thus, when the body 492 is inserted into the groove of the body 421, the top end of the grid 494 can be positioned below the top end of the support pins 422. Also, when the body 492 is inserted into the groove of the body 421 and the substrate M is placed on the support pins 422, the top end of the grid 494 can be positioned below the bottom surface of the substrate M.

[0149] A substrate processing method according to an embodiment of the inventive concept will be described below in detail. The substrate processing method described below can be performed in the chamber 400 according to the above-described embodiment. Also, the controller 30 can control the components of the chamber 400 so as to perform the substrate processing method described below.

[0150] Hereinafter, for convenience of understanding, an embodiment in which a teaching member is coupled to a support unit will be described as an example, but the inventive concept is not limited thereto. Figure 9 andFigure 10 The same or similar mechanisms can be performed in the described support unit and teaching member.

[0151] Figure 11 is a flowchart of a substrate processing method according to an embodiment of the inventive concept. Referring to Figure 11 , a substrate processing method according to an embodiment of the inventive concept can include a teaching step S10 and a processing step S20. The teaching step S10 can be performed before the processing step S20 is performed. For example, the teaching step S10 can be performed before the substrate M is brought into the inner space 412 of the chamber 400.

[0152] In the teaching step S10, the center position of the laser light irradiated via the head nozzle 480 can be taught. According to an embodiment, the center of the head nozzle 480 and the center of the laser light irradiated via the head nozzle 480 can be the same when viewed from above. Thus, in the teaching step S10, the center position of the laser light irradiated to the target object via the head nozzle 480 can be taught by teaching the center position of the imaging region in which the target object is imaged via the head nozzle 480.

[0153] Figure 12 is a block diagram schematically showing the order of the teaching step of Figure 11 . Figure 13 illustrates a state in which the head nozzle moves upward from the top side of the grid in the teaching step of Figure 11 .

[0154] Referring to Figure 12 and Figure 13 , in the teaching step S10, the head nozzle 480 moves upward in a center region including the center of the support unit 420. As previously described above, the teaching member 425 is positioned in the center region of the support unit 420. Thus, in the teaching step S10, the head nozzle 480 moves upward from the teaching member 425. According to an embodiment, in the teaching step S10, the head nozzle 480 moves upward from the grid 427.

[0155] If the head nozzle 480 is positioned at the top side of the grid 427, the support unit 420 shown in Figure 4 is rotated. If the head nozzle 480 is positioned at the top side of the grid 427, the imaging unit 700 images the rotated grid 427. The imaging unit 700 acquires an image of the grid 427 by imaging the rotated grid 527. According to an embodiment, the image of the grid 427 acquired by the imaging unit 700 can be one image. The imaging unit 700 transmits the acquired image to the controller 30.

[0156] The controller 30 checks whether the center of the head nozzle matches the reference point C displayed on the grid 427. The controller 30 can check whether the center of the imaged region imaged by the imaging unit 700 matches the reference point C and check whether the center of the laser irradiation and the center of the head nozzle match the reference point C. The mechanism by which the controller 30 checks whether the center of the imaged region and the reference point C coincide with each other will be described in detail below.

[0157] Figure 14 is a process to handle in time sequence Figure 13 an image in a set region in a grid image acquired via the head nozzle that has been moved up in the grid of

[0158] With reference to Figure 13 and Figure 14 , the controller 30 can set a set region AA of the entire region A of the image of the grid 427 received from the imaging unit 700. The set region AA can refer to a region including a point that becomes the center MC in the entire region A of the image. The point serving as the center MC in the entire region A of the image can coincide with the center of the imaged region imaged by the imaging unit 700. Further, the set region AA can have a region corresponding to the reference point C displayed on the grid 427. For example, assuming that the center MC and the reference point C displayed on the grid 427 are positioned on the same axis, the set region AA and the reference point C can overlap with each other when viewed from above.

[0159] The controller 30 can calculate the number of grids passing through the set region AA. According to an embodiment, the controller 30 can calculate the number of grids passing through the set region AA during a set time. The set time can be defined as the time required for the substrate M supported by the support unit 420 and the like shown in Figure 4 to perform a process step S20 to be described later. However, the above-mentioned definition of the time is for illustrative purposes only and is not limited thereto.

[0160] The controller 30 calculates the number of grids passing through the set region AA during the set time and calculates a change value of the calculated number of grids. For example, as shown in Figure 14 , the controller 30 determines whether there is a grid passing through the set region AA in the image acquired at the first time point T1 and whether there is a grid passing through the set region AA in the image acquired at the second time point T2. The second time point T2 can be a time point elapsing a short time from the first time point T1.

[0161] As shown in Figure 14As shown in FIG. 27, since the image acquired by the controller 30 is an image of the rotating grid 427, the controller 30 can determine that one grid passes the set region AA at the first time point Tl, and no grid passes the set region AA at the second time point T2. Thus, the controller 30 can calculate the number of grids passing the set region AA as one as time elapses from the first time point Tl to the second time point T2. For example, as shown in FIG. 28, the controller 30 can move the head nozzle 480 toward the center of the grid 427. Figure 13 As shown in FIG. 27, if the center MC of the image acquired by the imaging unit 700 by imaging the grid 427 is positioned near the outermost portion of the grid 427, the controller 30 can calculate the number of grids passing the set region as 64 during the set time.

[0162] If the number of grids passing the set region AA during the set time does not correspond to zero, the controller 30 can move the head nozzle 480. The controller 30 can move the head nozzle 480 to a position where the number of grids passing the set region AA during the set time becomes smaller. Thus, as shown in FIG. 29, the controller 30 can move the head nozzle 480 positioned near the outermost portion of the grid 427 toward the center of the grid 427. Figure 13 As shown in FIG. 27, if the center MC of the image acquired by the imaging unit 700 by imaging the grid 427 is positioned near the outermost portion of the grid 427, the controller 30 can calculate the number of grids passing the set region as 64 during the set time.

[0163] Figure 15 A state in which the center of the imaging region moves to the reference point of the grid in the teaching step of FIG. 25 is shown. Figure 11 A state in which the center of the imaging region moves to the reference point of the grid in the teaching step of FIG. 25 is shown. Figure 16 An image in the set region in the image of the grid acquired via the head nozzle of FIG. 25 is schematically shown. Figure 15 The controller 30 can move the head nozzle 480 until the number of grids passing the set region AA during the set time becomes zero. As shown in FIG. 29, if the center of the imaging region imaged by the imaging unit 700 coincides with the reference point C, as shown in FIG. 30, the controller 30 can move the head nozzle 480 to the reference point C.

[0164] Figure 15 As shown in FIG. 27, if the center MC of the image acquired by the imaging unit 700 by imaging the grid 427 is positioned near the outermost portion of the grid 427, the controller 30 can calculate the number of grids passing the set region as 64 during the set time. Figure 16 As shown in FIG. 27, if the center MC of the image acquired by the imaging unit 700 by imaging the grid 427 is positioned near the outermost portion of the grid 427, the controller 30 can calculate the number of grids passing the set region as 64 during the set time.

[0165] Referring back to FIG. 25, Figure 11 ​The processing step S20 can include a liquid processing step S22, a heating step S24, and a rinsing step S26. According to an embodiment, the liquid processing step S22 and the heating step S24 can be combined to be called an etching step. In the etching step, a pattern formed on the substrate M can be etched. For example, a specific pattern (e.g., the second pattern P2) formed on the substrate M is etched so that a critical dimension of the first pattern P1 formed on the substrate M coincides with a critical dimension of the second pattern P2 formed on the substrate M. Figure 3 Figure 3 The etching step can be a critical dimension correction process for correcting a difference between the critical dimensions of the first pattern P1 and the second pattern P2.

[0166] In the liquid processing step S22, the liquid supply unit 440 can supply a chemical that is an etchant to the substrate M supported by the support unit 420. In the liquid processing step S22, the chemical can be supplied to the rotation-stopped substrate M. If the chemical is supplied to the rotation-stopped substrate M, the chemical supplied to the substrate M can be supplied in an amount sufficient to form a puddle. For example, if the chemical is supplied to the rotation-stopped substrate M in the liquid processing step S22, the amount of the chemical supplied can cover the entire top surface of the substrate M, and can be supplied so that the amount does not become large even if the chemical does not flow or flow downward from the substrate M. If necessary, the nozzle 441 can supply the chemical to the entire top surface of the substrate M while changing the position thereof.

[0167] After the liquid processing step S22 is completed by supplying the chemical to the substrate M, the controller 30 can move the optical module 450 to a process position. The process position can be pre-stored in the controller 30. For example, the area in which the second pattern P2 is formed for each substrate M can be different. Therefore, if the pretreated substrate M is brought into the internal space 412 to be processed by the chamber 400, the controller 30 can store position coordinates from the center of the substrate M on which the pretreatment has been completed and brought in to the center of the area in which the second pattern P2 is formed on the substrate M.

[0168] In the teaching step S10, the controller 30 moves the head nozzle 480, the center of which is aligned with the reference point C. As previously described above, the reference point C can coincide with the center of the substrate M supported by the support unit 420 when viewed from above. Therefore, the controller 30 can use the stored position coordinates to move the center of the head nozzle 480 from the reference point C to the top side of the center of the area in which the second pattern P2 is formed on the substrate M.

[0169] ​The heating step S24 starts when the center of the head nozzle 480 corresponds to the center of the region where the second pattern P2 is formed when viewed from above. In the heating step S24, the substrate M is heated by irradiating the substrate M with a laser. According to the embodiment, in the heating step S24, the substrate M can be heated by irradiating the second pattern P2 formed on the substrate M with a laser.

[0170] The temperature of the region where the second pattern P2 is formed with a laser irradiation can increase. Therefore, the etching rate of the chemical already supplied in the region where the second pattern P2 is formed can increase. Thus, the critical dimension of the first pattern P1 can be changed from the first width (e.g., 69 nm) to the target critical dimension (e.g., 70 nm). In addition, the critical dimension of the second pattern P2 can be changed from the second width (e.g., 68.5 nm) to the target critical dimension (e.g., 70 nm). That is, in the heating step S24, the etching ability of the partial region of the substrate M is improved, thereby minimizing the critical dimension deviation of the pattern formed on the substrate M.

[0171] In order to accurately irradiate a laser to the second pattern P2, the center of the head nozzle 480 should be positioned above the center of the region where the second pattern P2 is formed. In the teaching step S10, the center of the imaging region is adjusted to the reference point C. Therefore, the center of the head nozzle 480 is also adjusted to the reference point C. In addition, the irradiation center of the laser irradiated via the head nozzle 480 is adjusted to the reference point C. When viewed from above, the reference point C corresponds to the center of the substrate M. The coordinates of the center of the region where the second pattern P2 is formed on the substrate M are calculated based on the center of the substrate M. That is, according to the embodiment of the inventive concept, by accurately teaching the center of the head nozzle 480 as the reference point C in the teaching step S10, the center of the head nozzle 480 can be accurately moved to the top side of the center of the region where the second pattern P2 is formed. Therefore, in the heating step S24, the second pattern P2 can be collectively and accurately heated by irradiating the region where the second pattern P2 is formed.

[0172] In addition, according to the embodiment of the inventive concept, the irradiation center of the laser can be adjusted by adjusting the center of the imaging region in the teaching step S10, so that the position where the laser is irradiated to the target object can be more effectively adjusted.

[0173] After the heating step S24 is completed, a rinsing step S26 can be performed. After the heating step S24 is completed, the optical module 450 can be moved from the process position to the standby position. In the rinsing step S26, the liquid supply unit 440 can supply a rinsing liquid to the rotating substrate M. In the rinsing step S26, the rinsing liquid can be supplied to the substrate M to remove byproducts attached to the substrate M. In addition, in order to dry the rinsing liquid remaining on the substrate M as necessary, the support unit 420 can remove the rinsing liquid remaining on the substrate M by high-speed rotation of the substrate M.

[0174] In the above-described embodiment, the controller 30 calculates the number of grids passing through the set region AA during the set time, and changes the center position of the imaging region of the imaging unit 700 using the calculated number of grids, but is not limited thereto. For example, the controller 30 can change the center position of the imaging region of the imaging unit 700 from the radial shape of the grid that changes as the grid 427 rotates, from the image acquired by the imaging unit 700. For example, the controller 30 can move the head nozzle 480 from a position where the radial shape of the grid changes much to a position where the radial shape of the grid changes little. Preferably, the controller 30 can move the head nozzle 480 to a position where the change in the radial shape of the grid is minimized. The position where the change in the radial shape of the grid is minimized can be a point where the center of the imaging region coincides with the reference point C.

[0175] Figure 17 is a flowchart of a substrate processing method according to Figure 11 another embodiment of the inventive concept. Referring to Figure 17 , the substrate processing method according to an embodiment of the inventive concept can include a processing step S30 and a teaching step S40. The processing step S30 according to an embodiment is mostly the same as or similar to the processing step S20 described with reference to Figure 11 , while the teaching step S40 is mostly the same as or similar to or less than the teaching step S10 described with reference to Figure 11 . However, the teaching step S40 according to an embodiment of the inventive concept can be performed after the processing step S30 is completed.

[0176] Effects of the inventive concept are not limited to what has been described herein above merely by way of example and further aspects of the inventive concept will be apparent to those skilled in the art from the description and the accompanying drawings.

[0177] Although the preferred embodiments of the inventive concept have been disclosed with respect to the best mode for practicing this inventive concept, the inventive concept is not limited to the particular embodiments described herein, and it is to be understood that various modifications can be made by those skilled in the art without departing from the spirit and scope of the inventive concept as claimed.

Claims

1. A substrate processing apparatus comprising: a support unit configured to rotate and support a substrate; a liquid supply unit configured to supply a liquid to the substrate supported on the support unit; and an optical module for heating the substrate supported on the support unit; and a controller for controlling the support unit and the optical module, and wherein the support unit includes a teaching member having a grid showing a reference point matching a center of the support unit, the optical module includes: a laser unit configured to irradiate a laser via a head nozzle to the substrate supported on the support unit; and an imaging unit configured to acquire an image by imaging a target object via the head nozzle, wherein the controller moves the head nozzle to a top side of the teaching member rotating at a constant speed, acquires an image including the grid by imaging the rotating teaching member, and calculates a number of grids through a set region including a center of the image in an entire region of the image during a set time, and moves the center of the head nozzle to the reference point based on a change in the number of grids. A top surface of the teaching member is positioned below a bottom surface of the substrate supported on the support unit.

2. The substrate processing apparatus according to claim 1, wherein An irradiation direction of the laser irradiated via the head nozzle is coaxial with an imaging direction of the target object imaged via the head nozzle.

3. The substrate processing apparatus according to claim 1, wherein The controller moves the head nozzle from a position having a large number of grids through the set region during the set time to a position having a relatively small number of grids.

4. The substrate processing apparatus according to claim 3, wherein If the number of grids through the set region during the set time becomes 0, the controller stops the movement of the head nozzle.

5. The substrate processing apparatus according to claim 4, wherein The support unit further includes a support pin for supporting the substrate, 6. The substrate processing apparatus according to any one of claims 1 to 5, wherein The teaching member is positioned at a center region including a center of the support unit, and The support pin is positioned at an edge region supporting the center region of the support unit. The teaching member can be detached from a top portion of the support unit.

7. The substrate processing apparatus according to claim 6, wherein The teaching member is coupled to a top portion of the support unit.

8. The substrate processing apparatus according to claim 6, wherein A center of the head nozzle, a center of the laser irradiated via the head nozzle, and a center of an imaging region of the imaging unit match each other.

9. The substrate processing apparatus according to claim 2 or 3, wherein 10.A substrate processing method comprising: processing a substrate at a processing space; and adjusting a center of a laser irradiated via a head nozzle of an optical module before or after the processing the substrate, a center of an imaging region of a target object imaged via the head nozzle of the optical module corresponds to the center of the laser when viewed from above, and wherein, wherein the head nozzle is moved when the center of the laser is adjusted so that the center of the imaging region corresponds to a center of a support unit supporting the substrate at the processing space when viewed from above, wherein a grid showing a reference point corresponding to the center of the support unit is positioned at a top portion of the support unit, ​ wherein the adjusting the center of the laser is performed in a state where the substrate is taken out from the processing space, and the head nozzle is moved so that the center of the imaging region corresponds to the reference point, and the adjusting the center of the laser moves the head nozzle to a top side of a teaching member rotating at a constant speed, an image including the grid is acquired by imaging the teaching member rotating, and a number of grids passing through a set region including the center of the image in the entire region of the image during a set time is calculated, and the center of the head nozzle is moved to the reference point based on a change in the number of grids.

11. The substrate processing method of claim 10, wherein, the adjusting the center of the laser moves the head nozzle from a position having a large number of grids passing through the set region during the set time to a position having a relatively small number of grids, and if the number of grids passing through the set region during the set time becomes 0, the movement of the head nozzle is stopped.

12. The substrate processing method according to any one of claims 10 to 11, wherein, the processing substrate includes supplying a liquid to a substrate supported by the support unit, and heating the substrate supported on the support unit with the laser, and the adjusting the center of the laser is performed before the supplying the liquid or after the heating the substrate.

13. The substrate processing method of claim 12, wherein, the substrate includes a mask having a plurality of cells, the mask includes a first pattern formed within the plurality of cells, and a second pattern formed outside a region in which the plurality of cells are formed and different from the first pattern, and wherein the heating the substrate irradiates the laser to the first pattern and the second pattern of the second pattern.

14. A substrate processing apparatus for processing a mask having a plurality of cells, the substrate processing apparatus comprising: a support unit configured to support the mask having a first pattern formed within the plurality of cells, and a second pattern formed outside a region in which the plurality of cells are formed and different from the first pattern; a liquid supply unit configured to supply a liquid to the mask supported on the support unit; an optical module for heating the mask supported on the support unit; and a controller for controlling the support unit and the optical module, and wherein the support unit includes: a support pin for supporting the mask; and a teaching member having a grid showing a reference point matching the support unit, wherein the optical module includes: a head nozzle; a laser unit configured to irradiate a laser to the mask via the head nozzle; and an imaging unit configured to image a target object via the head nozzle, wherein a center region including a center of the support unit is positioned at the teaching member, the support pin is positioned at an edge region surrounding the center region of the support unit, a top surface of the teaching member is positioned below a bottom surface of the mask supported on the support unit, and a bottom surface of the head nozzle is positioned above the top surface of the teaching member. wherein an irradiation direction of the laser irradiated via the head nozzle is coaxial with an imaging direction of the target object imaged via the head nozzle, and a center of the laser irradiated via the head nozzle corresponds to a center of an imaging region of the target object imaged via the head nozzle when viewed from above, the substrate processing apparatus further includes a controller for controlling the support unit and the optical module, wherein the controller moves the head nozzle to a top side of the teaching member rotating at a constant speed, acquires an image including the grid by imaging the teaching member rotating, and calculates a number of grids passing through a set region including a center of the image in an entire region of the image during a set time, and stops the movement of the head nozzle until the number of grids passing through the set region during the set time becomes 0.

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