Method and system for recovering optoelectronic parameters of optoelectronic imaging devices after on-orbit operation

Abstract

The present disclosure provides a method for restoring the photoelectric parameters of a photoelectric imaging device after on-orbit operation, wherein the photoelectric imaging device is damaged by radiation from high-energy particles after on-orbit operation, comprising: S1, placing the photoelectric imaging device in a darkroom cavity whose surface is covered with a shading unit; S2, adjusting the darkroom cavity to a preset temperature using a temperature control system; the temperature control system at least includes a signal processing circuit, a thermistor, a heat dissipation element, a heating element, an analog-to-digital converter, and a multi-way analog switch; S3, annealing the photoelectric imaging device for a preset time, and recording the annealing condition information; S4, setting test parameters using a control module in a test system, and collecting image data of the photoelectric imaging device at different integration times; S5, processing the image data using a computer to obtain key parameter data, and restoring the photoelectric parameters of the photoelectric imaging device based on the annealing condition information and the key parameter data.

Description

Technical Field

[0001] The present disclosure relates to the field of microelectronics technology, and in particular to a method and system for recovering optoelectronic parameters of an optoelectronic imaging device after on-orbit operation. Background Art

[0002] When performing space imaging missions, optoelectronic imaging devices used in space cameras are inevitably affected by high-energy particles (protons, electrons, etc.) in the space radiation environment, inducing various radiation effects, such as total ionization dose effects and displacement damage effects. Displacement damage and total ionization dose effects can lead to increased dark current and dark signal non-uniformity in image sensors, resulting in a decrease in the device's effective resolution and affecting the imaging performance of optoelectronic imaging devices. Therefore, it is necessary to conduct research on the recovery of optoelectronic parameters after on-orbit operation. Based on the degradation laws of optoelectronic parameters and annealing patterns, such as dark current and dark signal non-uniformity, reasonable parameter recovery methods can be determined to provide technical support for the long-term and reliable application of optoelectronic imaging devices in space cameras.

[0003] Determining the annealing temperature and duration is a major challenge in photoelectric parameter recovery research. Currently, research groups at home and abroad have conducted extensive post-irradiation annealing studies on photoelectric imaging devices, obtaining data on the recovery of some photoelectric parameters. However, given that the space environment differs from that on Earth and is more complex and harsh, it is difficult to maintain the same experimental conditions as on Earth. Furthermore, since these photoelectric imaging devices are required to perform space missions, the time available for annealing recovery is limited, making it impossible to choose the long annealing times used in ground-based experiments. Therefore, further research is needed to determine how to effectively and rationally recover photoelectric parameters after on-orbit operation. Summary of the Invention

[0004] (1) Technical issues to be resolved

[0005] In response to the above problems, the present disclosure provides a method and system for restoring the optoelectronic parameters of an optoelectronic imaging device after on-orbit operation, which is used to at least partially solve technical problems such as the difficulty in determining the annealing temperature and annealing time in the traditional way.

[0006] (2) Technical solution

[0007] On the one hand, the present disclosure provides a method for restoring the photoelectric parameters of a photoelectric imaging device after on-orbit operation, wherein the photoelectric imaging device is damaged by radiation from high-energy particles after on-orbit operation, comprising: S1, placing the photoelectric imaging device in a darkroom cavity with a shading unit covered on the surface; S2, adjusting the darkroom cavity to a preset temperature using a temperature control system; the temperature control system at least includes a signal processing circuit, a thermistor, a heat dissipation element, a heating element, an analog-to-digital converter, and a multi-channel analog switch; S3, annealing the photoelectric imaging device for a preset time and recording annealing condition information; S4, setting test parameters using a control module in a test system, and collecting image data of the photoelectric imaging device at different integration times; S5, processing the image data using a computer to obtain key parameter data, and restoring the photoelectric parameters of the photoelectric imaging device based on the annealing condition information and the key parameter data.

[0008] Furthermore, S1 also includes: connecting the temperature control system to the first power supply, debugging the signal processing circuit and the multi-way analog switch, so that the temperature control system works normally.

[0009] Furthermore, S1 also includes: connecting the test system to a second power supply, and using the control module to provide a dynamic timing to the optoelectronic imaging device, so that the test system works normally.

[0010] Furthermore, S2 also includes: using a signal processing circuit to adjust the temperature to a preset temperature, the preset temperature is higher than the operating temperature of the photoelectric imaging device, and the fluctuation range of the preset temperature is less than ±0.5°C.

[0011] Furthermore, S3 also includes: determining the integration time of the normal operation of the optoelectronic imaging device through the control module to put the optoelectronic imaging device into a normal working state; and using the timing module in the computer to record the annealing time.

[0012] Furthermore, S4 also includes: transmitting the image data to the computer through the control module.

[0013] Furthermore, S5 also includes: evaluating the damage degree and recovery status of the photoelectric imaging device based on key parameter data; the key parameter data includes dark current and dark signal non-uniformity; determining the condition information of the next annealing treatment based on the annealing condition information, damage degree and recovery status, and restoring the photoelectric parameters based on the condition information of the next annealing treatment.

[0014] Another aspect of the present disclosure provides a system for restoring the photoelectric parameters of a photoelectric imaging device after on-orbit operation, comprising: a darkroom cavity, the surface of which is covered with a shading unit, for accommodating the photoelectric imaging device; a temperature control system, for adjusting the darkroom cavity to a preset temperature range, and comprising at least a signal processing circuit, a thermistor, a heat dissipation element, a heating element, an analog-to-digital converter, and a multi-channel analog switch; a test system, for setting test parameters and collecting image data of the photoelectric imaging device at different integration times; and a computer, for processing the image data, obtaining key parameter data, and restoring the photoelectric parameters of the photoelectric imaging device based on annealing condition information and the key parameter data.

[0015] Furthermore, the control end of the multi-way analog switch is connected to the output end of the signal processing circuit, and the signal output end of the thermistor is connected to the input end of the analog-to-digital converter through the multi-way analog switch; the detected voltage value of the thermistor is converted into a resistance value R and stored in the analog-to-digital converter, and the signal processing circuit can obtain the collected resistance value R of the thermistor through the analog-to-digital converter to obtain an accurate temperature value through analysis and calculation.

[0016] Furthermore, the temperature control system also includes a first power supply for supplying power to the power supply module; the test system also includes a second power supply for supplying power to the power supply port.

[0017] (3) Beneficial effects

[0018] The present disclosure provides a method and system for restoring the optoelectronic parameters of optoelectronic imaging devices after on-orbit operation. Using a temperature control system and a testing system, under dark and stable temperature conditions, key parameter data for the optoelectronic imaging device after annealing is obtained based on testing, and the appropriate annealing temperature and duration are determined, thereby completing the parameter recovery process after on-orbit operation. This method can complete on-orbit optoelectronic parameter recovery during space missions, boasting a wide range of applications, simple methods, and strong operability. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 The following schematically shows the structure of a system for recovering optoelectronic parameters of an optoelectronic imaging device after on-orbit operation according to an embodiment of the present disclosure;

[0020] Figure 2 The following schematically illustrates a flow chart of a method for restoring optoelectronic parameters of an optoelectronic imaging device after on-orbit operation according to an embodiment of the present disclosure;

[0021] Figure 3 Schematically shows the relationship between the average dark current and the cumulative radiation dose according to an embodiment of the present disclosure;

[0022] Figure 4 Schematically shows the relationship between dark signal non-uniformity and irradiation cumulative dose according to an embodiment of the present disclosure;

[0023] Figure 5 Schematic diagram showing the relationship between the average dark current after γ-ray irradiation and the 30°C annealing time according to an embodiment of the present disclosure;

[0024] Figure 6 Schematic diagram showing the relationship between dark signal non-uniformity after γ-ray irradiation and 30°C annealing time according to an embodiment of the present disclosure;

[0025] Description of reference numerals:

[0026] 1. Temperature control system; 2. Test system; 3. Signal processing circuit; 4. Thermistor; 5. Heat dissipation element; 6. Heating element; 7. Analog-to-digital converter; 8. Multi-channel analog switch; 9. Control module; 10. Power supply port; 11. Second power supply; 12. Computer; 13. Shading unit; 14. Darkroom cavity; 15. Power supply module; 16. First power supply; 17. Timing module; 18. Photoelectric imaging device. DETAILED DESCRIPTION

[0027] In order to make the objectives, technical solutions and advantages of the present disclosure more clearly understood, the present disclosure is further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0028] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "comprise," "include," etc. used herein indicate the presence of the features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0029] The present disclosure provides a method for restoring photoelectric parameters of a photoelectric imaging device after it is operated on-orbit. The photoelectric imaging device 18 is damaged by radiation from high-energy particles after it is operated on-orbit. Figures 1 and 2 , including: S1, placing the photoelectric imaging device 18 in a darkroom cavity 14 with a shading unit 13 on the surface; S2, using the temperature control system 1 to adjust the darkroom cavity 14 to a preset temperature; the temperature control system 1 at least includes a signal processing circuit 3, a thermistor 4, a heat dissipation element 5, a heating element 6, an analog-to-digital converter 7, and a multi-way analog switch 8; S3, annealing the photoelectric imaging device 18 for a preset time and recording the annealing condition information; S4, using the control module 9 in the test system 2 to set test parameters, and collecting image data of the photoelectric imaging device 18 at different integration times; S5, using the computer 12 to process the image data, obtain key parameter data, and restore the photoelectric parameters of the photoelectric imaging device 18 according to the annealing condition information and the key parameter data.

[0030] The photoelectric imaging device 18 of the present disclosure is subjected to radiation damage from high-energy particles, and the types of high-energy particles include protons, electrons, heavy ions, neutrons, gamma rays and X-rays; radiation damage includes ionization damage and displacement damage. The method for restoring the photoelectric parameters includes: closing the shading unit 13 so that the photoelectric imaging device 18 is in a darkroom state without light, and turning on the temperature control system 1; waiting for the ambient temperature in the darkroom cavity 14 to stabilize, powering the photoelectric imaging device 18, maintaining the working state and timing; when the duration reaches a preset time, turning on the test system 2, adjusting the integration time, image acquisition frequency, image acquisition time and other conditions through the software of the computer 12, calculating the test results to obtain key parameter data, and evaluating the degree of damage and recovery of the device based on the key parameter data, completing the parameter recovery process after on-orbit operation. The present disclosure can complete the process of on-orbit photoelectric parameter recovery under the conditions of performing space missions, with a wide range of applications, simple methods and strong operability.

[0031] Based on the above embodiment, S1 further includes: connecting the temperature control system 1 to the first power supply 16, debugging the signal processing circuit 3 and the multi-way analog switch 8 to ensure normal operation of the temperature control system 1. Connecting the test system 2 to the second power supply 11, and using the control module 9 to provide dynamic timing to the optoelectronic imaging device 18 to ensure normal operation of the test system 2.

[0032] Specifically, the shading unit 13 is turned off so that the photoelectric imaging device 18 is in a lightless environment in the darkroom cavity 14. The first power supply 16 is turned on to power the temperature control system 1, and the signal processing circuit 3 and the multi-way analog switch 8 are debugged to ensure that the temperature control system 1 can work normally. The second power supply 11 is turned on to power the test system 2. The image acquisition software of the computer 12 loads the configuration file and the timing file and provides dynamic timing to the photoelectric imaging device 18 through the control module 9 to ensure that the test system 2 can work normally. The image data collected by the test system 2 is transmitted to the computer 12 through the control module 9; after completing all preparatory work, the first power supply 16 and the second power supply 11 are turned off, and the preparatory work is completed.

[0033] It should be noted that the control module 9 may include a field programmable gate array (FPGA), a microcontroller unit (MCU), an application specific integrated circuit (ASIC), etc.

[0034] Based on the above embodiment, S2 also includes: using the signal processing circuit 3 to adjust the temperature to a preset temperature, the preset temperature is higher than the operating temperature of the photoelectric imaging device 18, and the fluctuation range of the preset temperature is less than ±0.5°C.

[0035] Specifically, the ambient temperature of the darkroom cavity 14 is adjusted, the first power supply 16 is turned on, the temperature control system 1 is started, and the temperature is set to T through the signal processing circuit 3. When the ambient temperature of the darkroom cavity 14 is stable at temperature T, for example, T is 30°C, and the fluctuation range is less than ±0.5°C, the device is left to stand for a period of time, for example, 10 minutes, to ensure that the temperature at the location of the photoelectric imaging device 18 is stable.

[0036] Based on the above embodiment, S3 also includes: determining the integration time of the normal operation of the photoelectric imaging device 18 through the control module 9 to put the photoelectric imaging device 18 into a normal working state; and using the timing module 17 in the computer 12 to record the annealing time.

[0037] Specifically, the second power supply 11 is turned on, and the control module 9 determines the integration time and other configurations for the normal operation of the optoelectronic imaging device 18 to ensure that the optoelectronic imaging device 18 is in normal working condition. The timing module 17 of the computer 12 records the annealing duration. The annealing duration is determined based on the device's on-orbit operating time and the work schedule. Unless otherwise specified, the annealing duration is generally 24 hours.

[0038] On the basis of the above embodiment, S4 further includes: transmitting the image data to the computer 12 via the control module 9 .

[0039] When the annealing time reaches the preset time, the control module 9 adjusts the integration time and other configurations, the photoelectric imaging device 18 enters the test state, and continuously captures images at different integration times. The image data collected by the test system 2 is transmitted to the computer 12 through the control module 9.

[0040] Based on the above embodiment, S5 also includes: evaluating the damage degree and recovery status of the photoelectric imaging device 18 based on key parameter data; the key parameter data includes dark current and dark signal non-uniformity; determining the condition information of the next annealing treatment based on the annealing condition information, damage degree and recovery status, and restoring the photoelectric parameters based on the condition information of the next annealing treatment.

[0041] In image sensors such as CCD and CMOS, the main photoelectric parameters include dark current, dark signal non-uniformity, etc., wherein dark current refers to the electrons generated by the sensor due to thermal excitation, etc. in the absence of light; dark signal non-uniformity refers to the non-uniformity of the response of each pixel unit under dark field conditions. The collected images are quickly processed using the software of the computer 12 to obtain key parameter data of the photoelectric imaging device 18, such as dark current, dark signal non-uniformity, etc., to quickly evaluate the degree of damage and recovery of the device, and provide on-track data for subsequent work and annealing time, which has a certain degree of versatility. The method disclosed in the present invention is applicable to the recovery of photoelectric parameters of photoelectric imaging devices of different types and different processes after on-track operation, and is also applicable to the evaluation or design of radiation-hardened photoelectric imaging devices.

[0042] The present disclosure also provides a system for restoring optoelectronic parameters of optoelectronic imaging devices after on-orbit operation. Figure 1 , including: a darkroom cavity 14, the surface of which is covered with a shading unit 13, for accommodating a photoelectric imaging device 18; a temperature control system 1, for adjusting the darkroom cavity 14 to a preset temperature range, at least including a signal processing circuit 3, a thermistor 4, a heat dissipation element 5, a heating element 6, an analog-to-digital converter 7, and a multi-way analog switch 8; a test system 2, for setting test parameters and collecting image data of the photoelectric imaging device 18 at different integration times; a computer 12, for processing the image data, obtaining key parameter data, and restoring the photoelectric parameters of the photoelectric imaging device 18 according to the annealing condition information and the key parameter data.

[0043] The disclosed system for photoelectric parameter recovery consists of two major components: a temperature control system 1 and a test system 2. The temperature control system 1 comprises a signal processing circuit 3, a thermistor 4, a heat dissipation element 5, a heating element 6, an analog-to-digital converter 7, a multi-channel analog switch 8, and a power supply module 15. A first power supply 16 is connected to the power supply module 15. The test system 2 includes a control module 9 and a power supply port 10. A second power supply 11 is connected to the power supply port 10. The control module 9 is connected to a computer 12. The specific workflow has been described in detail above and will not be repeated here.

[0044] Based on the above embodiment, the control end of the multi-way analog switch 8 is connected to the output end of the signal processing circuit 3, and the signal output end of the thermistor 4 is connected to the input end of the analog-to-digital converter 7 through the multi-way analog switch 8; the detected voltage value of the thermistor 4 is converted into a resistance value R and stored in the analog-to-digital converter 7. The signal processing circuit 3 can obtain the collected resistance value R of the thermistor 4 through the analog-to-digital converter 7 to obtain an accurate temperature value through analysis and calculation.

[0045] Specifically, the temperature control system 1 acts as a control terminal, reads the ambient temperature from the thermistor 4, controls the operation of the heat dissipation element 5 and the heating element 6, and adjusts the ambient temperature. The number of the heat dissipation element 5 and the heating element 6 can be one or more, and their specific number and installation position can be set according to actual conditions. The temperature control process includes: the temperature control system 1 continuously reads the ambient temperature value from the thermistor 4 at a certain frequency (for example, 1 second) and compares it with the preset temperature. If the ambient temperature is lower than the preset temperature, the heating element 6 is controlled to work until the ambient temperature rises to the preset temperature, and the heating element 6 is controlled to stop working. If the ambient temperature is higher than the preset temperature, the heat dissipation element 5 is controlled to work until the ambient temperature drops to the preset temperature, and the heat dissipation element 5 is controlled to stop working.

[0046] The present disclosure solves the problem of selecting annealing conditions for optoelectronic imaging devices after on-orbit operation, and provides an effective and feasible method for recovering optoelectronic parameters after on-orbit operation.

[0047] The present disclosure is further described below through specific implementations. The following examples specifically illustrate the above-mentioned method and system for recovering optoelectronic parameters of optoelectronic imaging devices after on-orbit operation. However, the following examples are merely illustrative of the present disclosure and are not intended to limit the scope of the present disclosure.

[0048] In this embodiment, the system for recovering the optoelectronic parameters of an optoelectronic imaging device after on-orbit operation consists of two major components: a temperature control system 1 and a test system 2. The temperature control system 1 comprises a signal processing circuit 3, a thermistor 4, a heat dissipation element 5, a heating element 6, an analog-to-digital converter 7, a multi-channel analog switch 8, and a power supply module 15. A first power supply 16 is connected to the power supply module 15. The test system 2 includes a control module 9 and a power supply port 10. The control module 9 is a field programmable gate array. A second power supply 11 is connected to the power supply port 10. The control module 9 is connected to a computer 12. The method for recovering optoelectronic parameters is performed according to the following steps:

[0049] a. The test sample is a commercial CMOS image sensor, which is irradiated with gamma rays, and the cumulative irradiation dose is 100 krad (Si). The shading unit 13 is a shading cover, which places the photoelectric imaging device 18 in a lightless environment in the darkroom cavity 14. Turn on the first power supply 16 to power the temperature control system 1, debug the signal processing circuit 3 and the multi-way analog switch 8, and ensure that the temperature control system 1 can work normally. Turn on the second power supply 11 to power the test system 2, and the image acquisition software of the computer 12 loads the configuration file and the timing file to provide dynamic timing to the photoelectric imaging device 18 through the control module 9 to ensure that the test system 2 can work normally. The image data collected by the test system 2 is transmitted to the computer 12 through the control module 9; after completing all preparations, turn off the first power supply 16 and the second power supply 11, and the preparations are completed (see Figure 1 );

[0050] b. Adjust the ambient temperature of the darkroom cavity 14. Turn on the first power supply 16, start the temperature control system 2, and set the temperature to 30°C through the signal processing circuit 3. When the ambient temperature of the darkroom cavity 14 stabilizes at 30°C, with a fluctuation range of less than ±0.5°C, let the device stand for 10 minutes to ensure that the temperature of the photoelectric imaging device 18 is stable.

[0051] c. Turn on the second power supply 11, and determine the integration time and other configurations of the normal operation of the photoelectric imaging device 18 through the control module 9. Set the integration time to 7.7ms to ensure that the photoelectric imaging device 18 is in a normal working state. The timing module 17 of the computer 12 records the annealing time. Generally, the annealing time is 24 hours. According to the dark current after irradiation and the dark signal non-uniformity degradation curve (see Figure 3 and Figure 4 ), it was found that with the increase of cumulative dose, the dark current and dark signal non-uniformity of the device continued to degrade, which was manifested as the dark current and dark signal non-uniformity continued to increase;

[0052] d. When the annealing time reaches the specified time, the control module 9 adjusts the integration time and other configurations, and the photoelectric imaging device 18 enters the test state, continuously collecting images at different integration times, and the image data collected by the test system 2 is transmitted to the computer 12 through the control module 9;

[0053] e. Use the software of the computer 12 to quickly process the collected images to obtain key parameter data of the optoelectronic imaging device 18, including dark current, dark signal non-uniformity, etc., and quickly evaluate the damage degree and recovery of the device. In order to study the relationship between the annealing time of the device and the degree of parameter recovery, a total of 7 groups of annealing time, including 24 hours, 48 ​​hours, and 72 hours, were selected (see Figure 5 and Figure 6 ), it was found that when the annealing time was 24 hours, the recovery degree of the parameters was large. When the annealing time was further increased, the recovery degree of the parameters was not obvious. Therefore, the annealing time was generally set to 24 hours.

[0054] It can be seen that using the method for recovering optoelectronic parameters disclosed in the present invention, it was measured that the dark current and dark signal non-uniformity of the device after annealing were both well recovered, and it can be effectively used to recover the optoelectronic parameters of optoelectronic imaging devices operating on-orbit; in addition, based on the experimental results, the appropriate annealing temperature and annealing time were determined, which provides ideas for the on-orbit repair method of optoelectronic imaging devices.

[0055] The specific embodiments described above further illustrate the purpose, technical solutions and beneficial effects of the present disclosure. It should be understood that the above are only specific embodiments of the present disclosure and are not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure should be included in the scope of protection of the present disclosure.

Claims

1. A method for recovering photoelectric parameters of a photoelectric imaging device after it has been operated on-orbit, wherein the photoelectric imaging device (18) is damaged by radiation from high-energy particles after it has been operated on-orbit, characterized in that: include: S1, placing the photoelectric imaging device (18) in a darkroom cavity (14) whose surface is covered with a light shielding unit (13); S2, regulating the darkroom cavity (14) to a preset temperature using a temperature control system (1); the temperature control system (1) at least comprising a signal processing circuit (3), a thermistor (4), a heat dissipation element (5), a heating element (6), an analog-to-digital converter (7), and a multi-way analog switch (8); S3, annealing the photoelectric imaging device (18) for a preset time, and recording the annealing condition information; S4, using the control module (9) in the test system (2) to set test parameters and collect image data of the photoelectric imaging device (18) at different integration times; S5, using a computer (12) to process the image data to obtain key parameter data, and restoring the photoelectric parameters of the photoelectric imaging device (18) according to the annealing condition information and the key parameter data; The S5 further includes: Evaluating the damage degree and recovery status of the optoelectronic imaging device (18) based on the key parameter data; the key parameter data includes dark current and dark signal non-uniformity; The condition information for the next annealing process is determined according to the annealing condition information, the damage degree and the recovery condition, and the photoelectric parameters are restored according to the condition information for the next annealing process.

2. The method for restoring optoelectronic parameters of an optoelectronic imaging device after on-orbit operation according to claim 1, characterized in that: Said S1 further comprises: The temperature control system (1) is connected to a first power supply (16), and the signal processing circuit (3) and the multi-way analog switch (8) are debugged to enable the temperature control system (1) to operate normally.

3. The method for restoring the optoelectronic parameters of an optoelectronic imaging device after on-orbit operation according to claim 2, characterized in that: Said S1 further comprises: The test system (2) is connected to a second power supply (11), and a control module (9) is used to provide a dynamic timing sequence to the photoelectric imaging device (18), so that the test system (2) operates normally.

4. The method for restoring optoelectronic parameters of an optoelectronic imaging device after on-orbit operation according to claim 1, characterized in that: Said S2 further comprises: The signal processing circuit (3) is used to adjust the temperature to a preset temperature, wherein the preset temperature is higher than the operating temperature of the photoelectric imaging device (18), and the fluctuation range of the preset temperature is less than ±0.5°C.

5. The method for restoring optoelectronic parameters of an optoelectronic imaging device after on-orbit operation according to claim 1, characterized in that: Said S3 further comprises: Determining the integration time of the normal operation of the photoelectric imaging device (18) through a control module (9), so that the photoelectric imaging device (18) is in a normal operating state; The annealing time is recorded using a timing module (17) in the computer (12).

6. The method for restoring optoelectronic parameters of an optoelectronic imaging device after on-orbit operation according to claim 1, characterized in that: Said S4 further comprises: The image data is transmitted to the computer (12) via the control module (9).

7. A system for restoring optoelectronic parameters of optoelectronic imaging devices after on-orbit operation, characterized in that: include: A darkroom cavity (14), the surface of which is covered with a light shielding unit (13), and is used to accommodate a photoelectric imaging device (18); A temperature control system (1) for adjusting the darkroom cavity (14) to a preset temperature range, comprising at least a signal processing circuit (3), a thermistor (4), a heat dissipation element (5), a heating element (6), an analog-to-digital converter (7), and a multi-way analog switch (8); A test system (2) is used to set test parameters and collect image data of the photoelectric imaging device (18) at different integration times; A computer (12) is used to process the image data to obtain key parameter data, and restore the photoelectric parameters of the photoelectric imaging device (18) based on the annealing condition information and the key parameter data; And for evaluating the damage degree and recovery status of the photoelectric imaging device (18) based on the key parameter data; the key parameter data includes dark current and dark signal non-uniformity; determining the condition information of the next annealing process based on the annealing condition information, the damage degree and recovery status, and restoring the photoelectric parameters based on the condition information of the next annealing process.

8. The system for restoring optoelectronic parameters of an optoelectronic imaging device after on-orbit operation according to claim 7, characterized in that: The control end of the multi-way analog switch (8) is connected to the output end of the signal processing circuit (3), and the signal output end of the thermistor (4) is connected to the input end of the analog-to-digital converter (7) through the multi-way analog switch (8); The detected voltage value of the thermistor (4) is converted into a resistance value R and stored in the analog-to-digital converter (7). The signal processing circuit (3) can obtain the collected resistance value R of the thermistor (4) through the analog-to-digital converter (7) to obtain an accurate temperature value through analysis and calculation.

9. The system for restoring optoelectronic parameters of an optoelectronic imaging device after on-orbit operation according to claim 7, characterized in that: The temperature control system (1) further includes a first power supply (16) for supplying power to the power supply module (15); The test system (2) further comprises a second power supply (11) for supplying power to the power supply port (10).

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