Temperature control method, device and related equipment of polysilicon reactor

Abstract

The present disclosure provides a temperature control method, device and related equipment for a polysilicon reactor, and relates to the technical field of polysilicon production, wherein the method comprises: obtaining first voltage data of a first silicon rod group and second voltage data of a second silicon rod group in a first time period, wherein the second silicon rod group is arranged around the first silicon rod group; when the voltage difference between the first voltage data and the second voltage data is greater than a first preset threshold value, reducing the first current increment of the first silicon rod group in the first time period, and increasing the second current increment of the second silicon rod group in the first time period; increasing the current of the first silicon rod group according to the reduced first current increment, and increasing the current of the second silicon rod group according to the increased second current increment. The present disclosure measures the temperature difference between different silicon rod groups by the voltage difference, and realizes temperature control of different silicon rod groups based on the adjustment of the current increment, so that the temperature of silicon rods at different positions of the polysilicon reactor approaches the expected temperature, and improves the temperature control effect obtained by the polysilicon reactor.

Description

Technical Field

[0001] The present disclosure relates to the technical field of polysilicon production, and in particular to a temperature control method, device and related equipment of a polysilicon reaction furnace. Background Art

[0002] The polysilicon reactor is the core equipment for polysilicon production. In order to maximize the use of the space inside the furnace, multiple silicon rod rings are nested in a circular pattern inside the furnace.

[0003] It was found during production that the temperature control scheme of using the reaction time as a reference and applying the same intensity of current to all silicon rods in the furnace at the same time to adjust the overall temperature of the silicon rods in the furnace is prone to problems of silicon rod temperature being too high or too low. In other words, the temperature control effect of the temperature control scheme adopted by the relevant technology for polysilicon reactors is poor. Summary of the invention

[0004] The purpose of the present disclosure is to provide a temperature control method, device and related equipment for a polysilicon reactor, so as to solve the technical problem of poor temperature control effect when performing temperature control on a polysilicon reactor in the related art.

[0005] In a first aspect, an embodiment of the present disclosure provides a temperature control method for a polysilicon reactor, wherein the polysilicon reactor includes multiple layers of silicon rods arranged sequentially from the inside to the outside, and the method includes:

[0006] Acquire first voltage data of the first silicon rod group and second voltage data of the second silicon rod group at the start time of a first time period, wherein the first time period is any time period among multiple production time periods of the polysilicon reactor, the first silicon rod group is at least one layer of silicon rods in the multi-layer silicon rods, the second silicon rod group is at least one layer of silicon rods in the multi-layer silicon rods, and the second silicon rod group is arranged around the first silicon rod group;

[0007] When the operation state of the polysilicon reactor is normal, and the voltage difference between the first voltage data and the second voltage data is greater than a first preset threshold, the first current increment of the first silicon rod group in the first time period is reduced, the second current increment of the second silicon rod group in the first time period is increased, and the operation state of the polysilicon reactor is adjusted from the normal state to the abnormal state;

[0008] The current of the first silicon rod group is increased according to the decreased first current increment, and the current of the second silicon rod group is increased according to the increased second current increment.

[0009] In one embodiment, after increasing the current of the first silicon rod group according to the reduced first current increment and increasing the current of the second silicon rod group according to the increased second current increment, the method further includes:

[0010] Acquire, at the beginning of a second time period, third voltage data of the first silicon rod group and fourth voltage data of the second silicon rod group, wherein the second time period and the first time period are adjacent time periods;

[0011] When the operating state of the polysilicon reactor is the abnormal state, and the voltage difference between the third voltage data and the fourth voltage data is less than or equal to a second preset threshold, the current of the first silicon rod group is increased according to the third current increment of the first silicon rod group in the second time period, the current of the second silicon rod group is increased according to the fourth current increment of the second silicon rod group in the second time period, and the operating state of the polysilicon reactor is adjusted from the abnormal state to the normal state, wherein the first preset threshold is greater than the second preset threshold.

[0012] In one embodiment, after acquiring the third voltage data of the first silicon rod group and the fourth voltage data of the second silicon rod group in the second time period, the expected temperature control process further includes:

[0013] When the operation state of the polysilicon reactor is the abnormal state, and the voltage difference between the third voltage data and the fourth voltage data is greater than the second preset threshold, reducing the third current increment and increasing the fourth current increment;

[0014] The current of the first silicon rod group is increased according to the lowered third current increment, and the current of the second silicon rod group is increased according to the increased fourth current increment.

[0015] In one embodiment, the decrease in the third current increment is less than or equal to the decrease in the first current increment;

[0016] and / or,

[0017] The increase of the fourth current increment is less than or equal to the increase of the second current increment.

[0018] In one embodiment, the decrease in the first current increment is greater than the increase in the second current increment;

[0019] The decrease of the third current increment is greater than the increase of the fourth current increment.

[0020] In one embodiment, when the number of the first silicon rod group and the number of the second silicon rod group are not equal:

[0021] The first voltage data is the total voltage of the first silicon rod group, the second voltage data is the product of the total voltage of the second silicon rod group and a first correction parameter, and the first correction parameter is the ratio of the number of silicon rods in the first silicon rod group to the number of silicon rods in the second silicon rod group;

[0022] or,

[0023] The first voltage data is the product of the total voltage of the first silicon rod group and a second correction parameter, the second voltage data is the total voltage of the second silicon rod group, and the second correction parameter is the ratio of the number of silicon rods in the second silicon rod group to the number of silicon rods in the first silicon rod group.

[0024] In one embodiment, the multi-layer silicon rods include a first layer of silicon rods, a second layer of silicon rods, a third layer of silicon rods, and a fourth layer of silicon rods arranged in sequence from the inside to the outside;

[0025] The first silicon rod group is the first layer of silicon rods, and the second silicon rod group is the third layer of silicon rods;

[0026] and / or,

[0027] The first silicon rod group is the second layer of silicon rods, and the second silicon rod group is the fourth layer of silicon rods.

[0028] In a second aspect, an embodiment of the present disclosure further provides a temperature control device for a polysilicon reactor, wherein the polysilicon reactor comprises a plurality of silicon rods arranged sequentially from the inside to the outside, and the device comprises:

[0029] A first acquisition module is used to acquire first voltage data of a first silicon rod group and second voltage data of a second silicon rod group at a start time of a first time period, wherein the first time period is any time period among multiple production time periods of the polysilicon reactor, the first silicon rod group is at least one layer of silicon rods in the multi-layer silicon rods, the second silicon rod group is at least one layer of silicon rods in the multi-layer silicon rods, and the second silicon rod group is arranged around the first silicon rod group;

[0030] a first adjustment module, configured to, when the operating state of the polysilicon reactor is normal and the voltage difference between the first voltage data and the second voltage data is greater than a first preset threshold, reduce a first current increment of the first silicon rod group in the first time period, increase a second current increment of the second silicon rod group in the first time period, and adjust the operating state of the polysilicon reactor from the normal state to an abnormal state;

[0031] The first execution module is configured to increase the current of the first silicon rod group according to the decreased first current increment, and to increase the current of the second silicon rod group according to the increased second current increment.

[0032] In a third aspect, an embodiment of the present disclosure further provides an electronic device, comprising a processor, a memory, and a computer program stored in the memory and executable on the processor, wherein the computer program implements the steps of the above-mentioned temperature control method for a polysilicon reactor when executed by the processor.

[0033] In a fourth aspect, an embodiment of the present disclosure further provides a computer-readable storage medium having a computer program stored thereon, and when the computer program is executed by a processor, the steps of the temperature control method of the polysilicon reactor are implemented.

[0034] In the disclosed embodiment, the temperature of the silicon rod group is indirectly determined by acquiring the voltage data of the silicon rod group, and the temperature difference between different silicon rod groups is determined by comparing the difference between the voltage data. When the voltage difference is greater than a first preset threshold, the current increment of the corresponding silicon rod group is adjusted to reduce the temperature difference between different silicon rod groups, so that the temperature of the silicon rods at different positions of the polysilicon reactor approaches the expected temperature, reducing the probability of the silicon rods having too high or too low temperature problems, and improving the temperature control effect of the polysilicon reactor. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for use in the description of the embodiments of the present disclosure will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0036] Figure 1 is a flow chart of a temperature control method for a polysilicon reactor provided by an embodiment of the present disclosure;

[0037] Figure 2 is a schematic diagram of the silicon rod layout of a polysilicon reactor provided in an embodiment of the present disclosure;

[0038] Figure 3 It is a structural schematic diagram of a temperature control device for a polysilicon reaction furnace provided by an embodiment of the present disclosure;

[0039] Figure 4 It is a structural schematic diagram of an electronic device provided by an embodiment of the present disclosure. DETAILED DESCRIPTION

[0040] The following will be combined with the drawings in the embodiments of the present disclosure to clearly and completely describe the technical solutions in the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0041] The embodiment of the present disclosure provides a temperature control method for a polysilicon reactor, wherein the polysilicon reactor comprises a plurality of silicon rods arranged in sequence from the inside to the outside, such as Figure 1 As shown, the method includes:

[0042] Step 101 : acquiring first voltage data of a first silicon rod group and second voltage data of a second silicon rod group at the beginning of a first time period.

[0043] The first time period is any time period among multiple production time periods of the polysilicon reactor, the first silicon rod group is at least one layer of silicon rods in the multi-layer silicon rods, the second silicon rod group is at least one layer of silicon rods in the multi-layer silicon rods, and the second silicon rod group is arranged around the first silicon rod group.

[0044] In the present disclosure, the first silicon rod group is used to indicate the inner silicon rods in the polysilicon reactor, and the second silicon rod group is used to indicate the outer silicon rods in the polysilicon reactor. The inner silicon rods are prone to have a temperature higher than the expected temperature due to untimely heat dissipation, while the outer silicon rods are prone to have a temperature lower than the expected temperature due to too fast heat dissipation.

[0045] When the temperature of the silicon rod is too high, silicon will melt, which will lead to a decrease in the output of the polysilicon reactor; when the temperature of the silicon rod is too low, dense silicon particles will not be easily distributed on the surface of the silicon rod due to vapor deposition, which will lead to an increase in the defective rate of the polysilicon reactor.

[0046] Since the internal environment of the polysilicon reactor is complex and is greatly affected by factors such as temperature and raw materials (such as trichlorosilane and hydrogen), it is difficult to directly measure the temperature of the silicon rod. Therefore, the present invention adopts a method of monitoring the voltage data of the silicon rod group to indirectly determine the corresponding temperature of the silicon rod group. Under the premise of ensuring the measurement accuracy, the difficulty of detecting the silicon rod temperature is effectively reduced.

[0047] It should be noted that in the production process of the polysilicon reactor, the voltage of the silicon rods in the furnace is greatly affected by the temperature of the silicon rods. The lower the voltage of the silicon rods in the furnace, the higher the temperature of the silicon rods.

[0048] Step 102: When the operating state of the polysilicon reactor is normal and the voltage difference between the first voltage data and the second voltage data is greater than a first preset threshold, the first current increment of the first silicon rod group in the first time period is reduced, the second current increment of the second silicon rod group in the first time period is increased, and the operating state of the polysilicon reactor is adjusted from the normal state to the abnormal state.

[0049] In each production period of the polysilicon reactor, the reactor control system will configure a preset current increment corresponding to the production period, and the preset current increment corresponding to each production period of the polysilicon reactor can be determined based on a preset current material table, which can be determined based on the actual experience of production personnel or based on multiple historical current change data sets of the polysilicon reactor in a historical period.

[0050] Among them, the operating state of the polysilicon reactor is a normal state, which can be understood as: in the previous period of the first period, the actual current increment of the first silicon rod group is equal to the preset current increment of the previous period of the first period, and the actual current increment of the second silicon rod group is equal to the preset current increment of the previous period of the first period.

[0051] Step 103: increasing the current of the first silicon rod group according to the decreased first current increment, and increasing the current of the second silicon rod group according to the increased second current increment.

[0052] It should be noted that during the production process of the polysilicon reactor, the temperature of the silicon rods in the furnace is greatly affected by the electric current. By increasing the current flowing through the silicon rods in the furnace, the temperature of the silicon rods can be increased accordingly.

[0053] In the disclosed embodiment, the temperature of the silicon rod group is indirectly determined by acquiring the voltage data of the silicon rod group, and the temperature difference between different silicon rod groups is determined by comparing the difference between the voltage data. When the voltage difference is greater than a first preset threshold, the current increment of the corresponding silicon rod group is adjusted to reduce the temperature difference between different silicon rod groups, so that the temperature of the silicon rods at different positions of the polysilicon reactor approaches the expected temperature, reducing the probability of the silicon rods having too high or too low temperature problems, and improving the temperature control effect of the polysilicon reactor.

[0054] Among them, in the process of adjusting the temperature of the silicon rod by adjusting the current increment, while lowering the temperature of the inner silicon rod, the temperature of the outer silicon rod is increased accordingly, so as to achieve stable regulation of the overall temperature in the polysilicon reactor, and further improve the temperature control effect obtained by the polysilicon reactor.

[0055] In one embodiment, the multi-layer silicon rods include a first layer of silicon rods, a second layer of silicon rods, a third layer of silicon rods, and a fourth layer of silicon rods arranged in sequence from the inside to the outside;

[0056] The first silicon rod group is the first layer of silicon rods, and the second silicon rod group is the third layer of silicon rods;

[0057] and / or,

[0058] The first silicon rod group is the second layer of silicon rods, and the second silicon rod group is the fourth layer of silicon rods.

[0059] In this embodiment, when the multi-layer silicon rods include four layers, the first silicon rod group is limited to the first layer of silicon rods and / or the second layer of silicon rods, the second silicon rod group is limited to the third layer of silicon rods and / or the fourth layer of silicon rods, and the first layer of silicon rods corresponds to the third layer of silicon rods, and the second layer of silicon rods corresponds to the fourth layer of silicon rods, so as to adapt to the silicon rod temperature conditions of the four-layer silicon rods set in actual production, and the temperature control effect obtained by the polysilicon reactor can be further improved.

[0060] For ease of understanding, the following examples are provided:

[0061] like Figure 2 As shown, 40 pairs of silicon rods are arranged in the polysilicon reactor, wherein the 40 pairs of silicon rods are arranged from the inside to the outside in four layers including an inner circle, a middle circle, a second outer circle and an outermost circle. The inner circle silicon rods are numbered C2, the middle circle silicon rods are numbered A1, the second outer circle silicon rods are numbered A2 and B2, the outermost circle silicon rods are numbered B1 and C1, A1, B1, C1 and B2 are all 8 pairs of rods, and A2 and C2 are all 4 pairs of rods.

[0062] In this example, the inner ring silicon rods and the middle ring silicon rods are located close to the center of the reactor, and the heat dissipation effect is poor, so the problem of silicon rod temperature being too high may easily occur; while the second outer ring silicon rods and the outermost ring silicon rods are located far away from the center of the reactor, and the heat dissipation effect is good, so the problem of silicon rod temperature being too low may easily occur.

[0063] Compared with the solution of using two adjacent circles of silicon rods as the first silicon rod group and the second silicon rod group, using two circles of silicon rods separated by one circle of silicon rods as the first silicon rod group and the second silicon rod group is more adapted to the actual temperature of the silicon rods in the reactor. Specifically, when the first silicon rod group is the inner circle silicon rods, the second silicon rod group is the second outer circle silicon rods; when the first silicon rod group is the middle circle silicon rods, the second silicon rod group is the outermost circle silicon rods.

[0064] In one embodiment, after increasing the current of the first silicon rod group according to the reduced first current increment and increasing the current of the second silicon rod group according to the increased second current increment, the method further includes:

[0065] Acquire, at the beginning of a second time period, third voltage data of the first silicon rod group and fourth voltage data of the second silicon rod group, wherein the second time period and the first time period are adjacent time periods;

[0066] When the operating state of the polysilicon reactor is the abnormal state, and the voltage difference between the third voltage data and the fourth voltage data is less than or equal to a second preset threshold, the current of the first silicon rod group is increased according to the third current increment of the first silicon rod group in the second time period, the current of the second silicon rod group is increased according to the fourth current increment of the second silicon rod group in the second time period, and the operating state of the polysilicon reactor is adjusted from the abnormal state to the normal state, wherein the first preset threshold is greater than the second preset threshold.

[0067] Furthermore, after obtaining the third voltage data of the first silicon rod group and the fourth voltage data of the second silicon rod group in the second time period, the preset temperature control process further includes:

[0068] When the operation state of the polysilicon reactor is the abnormal state, and the voltage difference between the third voltage data and the fourth voltage data is greater than the second preset threshold, reducing the third current increment and increasing the fourth current increment;

[0069] The current of the first silicon rod group is increased according to the lowered third current increment, and the current of the second silicon rod group is increased according to the increased fourth current increment.

[0070] In this embodiment, after the current of the first silicon rod group is increased based on the reduced first current increment, and the current of the second silicon rod group is increased based on the increased second current increment, the third voltage data and the fourth voltage data are collected and compared to monitor whether the temperature difference between the first silicon rod group and the second silicon rod group after temperature control meets expectations, and determine whether to continue to control the current increment based on the voltage difference to improve the temperature control effect obtained by the polysilicon reactor.

[0071] Among them, the voltage difference between the third voltage data and the fourth voltage data is less than or equal to the second preset threshold value, indicating that the temperature difference between the first silicon rod group and the second silicon rod group after temperature control meets expectations. At this time, the current of the first silicon rod group and the current of the second silicon rod group are increased accordingly according to the preset current increment, and the operating state of the polysilicon reactor is adjusted from the abnormal state to the normal state to indicate the end of this round of temperature control operation. It should be noted that in the subsequent reaction process, if it is monitored again that the voltage difference between the first voltage data and the second voltage data is greater than the first preset threshold value, a new round of temperature control operation will be executed accordingly.

[0072] The fact that the voltage difference between the third voltage data and the fourth voltage data is greater than the second preset threshold value indicates that the temperature difference between the first silicon rod group and the second silicon rod group after temperature control does not meet expectations. At this time, the third current increment is reduced and the fourth current increment is increased, and the operating state of the polysilicon reactor is still abnormal. It should be noted that, in the subsequent reaction period of the second time period, if the difference between the fifth voltage data of the first silicon rod group and the sixth voltage data of the second silicon rod group is still greater than the second preset threshold value, the above-mentioned current increment adjustment process is repeated, and the operating state of the polysilicon reactor is maintained as an abnormal state until the voltage difference between the first silicon rod group and the second silicon rod group is less than or equal to the second preset threshold value.

[0073] That is to say, one round of temperature control operation in this embodiment involves at least two production periods. Through this time-divided step-by-step temperature adjustment, the lag problem existing in the temperature control process of the polysilicon reactor is matched, the overall temperature fluctuation in the polysilicon reactor is slowed down, the normal production of polysilicon is ensured, and the temperature control effect obtained by the polysilicon reactor is further improved.

[0074] In one embodiment, the decrease in the third current increment is less than or equal to the decrease in the first current increment;

[0075] and / or,

[0076] The increase of the fourth current increment is less than or equal to the increase of the second current increment.

[0077] In this embodiment, by limiting the decrease of the third current increment to be less than or equal to the decrease of the first current increment, and / or the increase of the fourth current increment to be less than or equal to the increase of the second current increment, the increase and / or decrease of the current can be gradually reduced in at least two time periods involved in a round of temperature control operation, so that the overall temperature fluctuation in the polysilicon reactor is further mitigated in the later stage of control (compared with the early stage of control), thereby further improving the temperature control effect of the polysilicon reactor.

[0078] For example, if the decrease in the first current increment is 5A, the decrease in the third current increment may be 4A, 4.5A, 3A, etc.

[0079] Similarly, if the increase in the second current increment is 3A, the increase in the fourth current increment may be 2.5A, 2A, and so on.

[0080] It should be noted that in the present disclosure, the amplitude of any increase or decrease in current increment is less than or equal to the value of the current increment, so as to match the situation in which the current flowing through the silicon rod gradually increases with the increase of reaction time during the production process of the polysilicon reactor, thereby ensuring the smooth operation of the polysilicon reactor.

[0081] In one embodiment, the decrease in the first current increment is greater than the increase in the second current increment;

[0082] The decrease of the third current increment is greater than the increase of the fourth current increment.

[0083] In this embodiment, in order to address the situation where the radiant heat of the outer ring silicon rods is conducted to the inner ring silicon rods, thereby causing the actual temperature adjustment range of the inner ring silicon rods to be higher than the expected temperature adjustment range, the decrease in the first current increment is limited to be greater than the increase in the second current increment, and the decrease in the third current increment is limited to be greater than the increase in the fourth current increment, so as to increase the decrease in the current increment of the first silicon rod group, that is, increase the decrease in the current increment of the inner ring silicon rods, and temperature-control the first silicon rod group in conjunction with the heat conduction of the outer ring silicon rods, so that the actual temperature adjustment range of the inner ring silicon rods approaches the expected temperature adjustment range, thereby improving the accuracy of the temperature control operation of the inner ring silicon rods.

[0084] In one embodiment, when the number of the first silicon rod group and the number of the second silicon rod group are not equal:

[0085] The first voltage data is the total voltage of the first silicon rod group, the second voltage data is the product of the total voltage of the second silicon rod group and a first correction parameter, and the first correction parameter is the ratio of the number of silicon rods in the first silicon rod group to the number of silicon rods in the second silicon rod group;

[0086] or,

[0087] The first voltage data is the product of the total voltage of the first silicon rod group and a second correction parameter, the second voltage data is the total voltage of the second silicon rod group, and the second correction parameter is the ratio of the number of silicon rods in the second silicon rod group to the number of silicon rods in the first silicon rod group.

[0088] In this embodiment, by setting correction parameters, the difference in the number of silicon rods between the first silicon rod group and the second silicon rod group is balanced, so that the aforementioned voltage difference can accurately reflect the silicon rod temperature difference between the first silicon rod group and the second silicon rod group, thereby improving the control accuracy of the temperature control method described in the present disclosure.

[0089] For example, if the first silicon rod group includes four pairs of silicon rods, the second silicon rod group includes eight pairs of silicon rods, the total voltage of the first silicon rods is 324V, and the total voltage of the second silicon rod group is 648V, then the first correction coefficient can be 0.5. At this time, the first voltage data is 324V, and the second voltage data is also 324V (i.e., 648V×0.5).

[0090] In one embodiment, after reducing the first current increment of the first silicon rod group in the first time period and increasing the second current increment of the second silicon rod group in the first time period, the method further includes:

[0091] The current increment of the first silicon rod group in the first time period is updated according to the reduced first current increment, and the current increment of the second silicon rod group in the first time period is updated according to the increased second current increment, that is, the material table data corresponding to the first time period in the aforementioned preset current material table is updated according to the reduced first current increment and the increased second current increment, so as to improve the reliability of the preset current material table and improve the control stability of the polysilicon reactor in iterative production.

[0092] In one embodiment, after reducing the third current increment and increasing the fourth current increment, the method further comprises:

[0093] The current increment of the first silicon rod group in the second period is updated according to the lowered third current increment, and the current increment of the second silicon rod group in the second period is updated according to the increased fourth current increment.

[0094] For example, see Figure 2 , the reduction furnace runs for 50h in the first reaction process, the real-time voltage of phase C2 is 275V, the real-time voltage of phase A2 is 324V, the real-time voltage of phase A1 is 615V, the real-time voltage of phase B2 is 648V, the real-time voltage of phase B1 is 667V, and the real-time voltage of phase C1 is 667V. During this period, the current of phase C2 is 1384A, and the currents of the other five phases are all 1785A.

[0095] The temperature control options that can be set include:

[0096] When a period of time is monitored (U B1 +U C1 ) / 2-U A1 >5V, execute I A1 The rise value is reduced by 5A, I B1 ,I C1 The increase value is increased by 2A until (U B1 +U C1 ) / 2-U A1When ≤0V, the A1 current rise value is restored, that is, the material table value is restored.

[0097] In this example, the reactor runs for 50 hours, (U B1 +U C1 ) / 2-U A1 =(667+667) / 2-615=52, which is greater than 5V, so the system executes I A1 The rise value is reduced by 5A, I B1 ,I C1 The increase value is 2A. Since the voltage control loop is PID control, the current adjustment will change the voltage, so the new U A1 , U B1 and U C1 , continue to substitute the above setting program to adjust the current increase value. If the next period (U B1 +U C1 ) / 2-U A1 >0V, the system executes I A1 The rise value is reduced by 5A, I B1 ,I C1 The increase value is increased by 2A until the voltage data monitored in a certain period of time meets (UB1+UC1) / 2-UA1≤0V, and then the current increase values ​​of A1, B1 and C1 are restored to the set material table values.

[0098] The temperature control solution also includes:

[0099] At a certain moment, (U A2 +U B2 ) / 3-U C2 >5V, execute I C2 The rise value is reduced by 5A, I A2 ,I B2 The increment value is increased by 1A until (U A2 +U B2 ) / 4-U C2 When ≤0V, the C2 current rise value is restored, that is, the material table value is restored.

[0100] In this example, the reactor runs for 50 hours, (U A2 +U B2 ) / 3-U C2 =(667+667) / 4-275=58.5, which is greater than 5V, so the system executes I C2 The rise value is reduced by 5A, I A2 ,I B2 The program increases the amplitude by 1A. Since the voltage control loop is PID control, the adjustment of current will change the voltage, so the new U A2 , U B2 and UC2 , continue to substitute the above setting program to adjust the current increase value until it meets (U A2 +U B2 ) / 3-U C2 When the voltage is less than or equal to 0V, the current rise values ​​of A2, B2 and C2 are restored to the set material table values.

[0101] See also Figure 3 , Figure 3 The present invention provides a temperature control device for a polysilicon reactor, wherein the polysilicon reactor comprises a plurality of silicon rods arranged in sequence from the inside to the outside, such as Figure 3 As shown, the temperature control device 300 includes:

[0102] A first acquisition module 301 is used to acquire first voltage data of a first silicon rod group and second voltage data of a second silicon rod group at the start time of a first time period, wherein the first time period is any time period among multiple production time periods of the polysilicon reactor, the first silicon rod group is at least one layer of silicon rods in the multi-layer silicon rods, the second silicon rod group is at least one layer of silicon rods in the multi-layer silicon rods, and the second silicon rod group is arranged around the first silicon rod group;

[0103] A first adjustment module 302 is configured to, when the operation state of the polysilicon reactor is normal and the voltage difference between the first voltage data and the second voltage data is greater than a first preset threshold, reduce a first current increment of the first silicon rod group in the first time period, increase a second current increment of the second silicon rod group in the first time period, and adjust the operation state of the polysilicon reactor from the normal state to an abnormal state;

[0104] The first execution module 303 is configured to increase the current of the first silicon rod group according to the reduced first current increment, and to increase the current of the second silicon rod group according to the increased second current increment.

[0105] In one embodiment, the temperature control device 300 further includes:

[0106] A second acquisition module is used to acquire the third voltage data of the first silicon rod group and the fourth voltage data of the second silicon rod group at the beginning of a second time period, wherein the second time period and the first time period are adjacent time periods;

[0107] A second execution module is used for increasing the current of the first silicon rod group according to the third current increment of the first silicon rod group in the second time period, increasing the current of the second silicon rod group according to the fourth current increment of the second silicon rod group in the second time period, and adjusting the operating state of the polysilicon reactor from the abnormal state to the normal state when the operating state of the polysilicon reactor is the abnormal state and the voltage difference between the third voltage data and the fourth voltage data is less than or equal to a second preset threshold value, wherein the first preset threshold value is greater than the second preset threshold value.

[0108] In one embodiment, the temperature control device 300 further includes:

[0109] a second adjustment module, configured to reduce the third current increment and increase the fourth current increment when the operating state of the polysilicon reactor is the abnormal state and the voltage difference between the third voltage data and the fourth voltage data is greater than the second preset threshold;

[0110] The third execution module is configured to increase the current of the first silicon rod group according to the reduced third current increment, and to increase the current of the second silicon rod group according to the increased fourth current increment.

[0111] In one embodiment, the decrease in the third current increment is less than or equal to the decrease in the first current increment;

[0112] and / or,

[0113] The increase of the fourth current increment is less than or equal to the increase of the second current increment.

[0114] In one embodiment, the decrease in the first current increment is greater than the increase in the second current increment;

[0115] The decrease of the third current increment is greater than the increase of the fourth current increment.

[0116] In one embodiment, when the number of the first silicon rod group and the number of the second silicon rod group are not equal:

[0117] The first voltage data is the total voltage of the first silicon rod group, the second voltage data is the product of the total voltage of the second silicon rod group and a first correction parameter, and the first correction parameter is the ratio of the number of silicon rods in the first silicon rod group to the number of silicon rods in the second silicon rod group;

[0118] or,

[0119] The first voltage data is the product of the total voltage of the first silicon rod group and a second correction parameter, the second voltage data is the total voltage of the second silicon rod group, and the second correction parameter is the ratio of the number of silicon rods in the second silicon rod group to the number of silicon rods in the first silicon rod group.

[0120] In one embodiment, the multi-layer silicon rods include a first layer of silicon rods, a second layer of silicon rods, a third layer of silicon rods, and a fourth layer of silicon rods arranged in sequence from the inside to the outside;

[0121] The first silicon rod group is the first layer of silicon rods, and the second silicon rod group is the third layer of silicon rods;

[0122] and / or,

[0123] The first silicon rod group is the second layer of silicon rods, and the second silicon rod group is the fourth layer of silicon rods.

[0124] In one embodiment, the temperature control device 300 further includes:

[0125] The first updating module is used to update the current increment of the first silicon rod group in the first time period according to the reduced first current increment, and to update the current increment of the second silicon rod group in the first time period according to the increased second current increment.

[0126] In one embodiment, the temperature control device 300 further includes:

[0127] The second updating module is used to update the current increment of the first silicon rod group in the second time period according to the reduced third current increment, and to update the current increment of the second silicon rod group in the second time period according to the increased fourth current increment.

[0128] The temperature control device 300 provided in the embodiment of the present disclosure can implement each process in the above method embodiment, and will not be described again here to avoid repetition.

[0129] According to an embodiment of the present disclosure, the present disclosure also provides an electronic device, a readable storage medium and a computer program product.

[0130] Figure 4A schematic block diagram of an example electronic device 400 that can be used to implement an embodiment of the present disclosure is shown. The electronic device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as personal digital processing, cellular phones, smart phones, wearable devices, and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present disclosure described and / or required herein.

[0131] like Figure 4 As shown, the device 400 includes a computing unit 401, which can perform various appropriate actions and processes according to a computer program stored in a read-only memory (ROM) 402 or a computer program loaded from a storage unit 408 to a random access memory (RAM) 403. In the RAM 403, various programs and data required for the operation of the device 400 can also be stored. The computing unit 401, the ROM 402, and the RAM 403 are connected to each other via a bus 404. An input / output (I / O) interface 405 is also connected to the bus 404.

[0132] A number of components in the device 400 are connected to the I / O interface 405, including: an input unit 406, such as a keyboard, a mouse, etc.; an output unit 407, such as various types of displays, speakers, etc.; a storage unit 408, such as a disk, an optical disk, etc.; and a communication unit 409, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 409 allows the device 400 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks.

[0133] The computing unit 401 may be a variety of general and / or special processing components with processing and computing capabilities. Some examples of the computing unit 401 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various dedicated artificial intelligence (AI) computing chips, various computing units running machine learning model algorithms, digital signal processors (DSP), and any appropriate processors, controllers, microcontrollers, etc. The computing unit 401 performs the various methods and processes described above, such as a map information display method or a map information transmission method. For example, in some embodiments, the map information display method or the map information transmission method may be implemented as a computer software program, which is tangibly contained in a machine-readable medium, such as a storage unit 408. In some embodiments, part or all of the computer program may be loaded and / or installed on the device 400 via the ROM 402 and / or the communication unit 409. When the computer program is loaded into the RAM 403 and executed by the computing unit 401, one or more steps of the map information display method or the map information transmission method described above may be executed. Alternatively, in other embodiments, the computing unit 401 may be configured to execute the map information display method or the map information transmission method in any other appropriate manner (eg, by means of firmware).

[0134] Various embodiments of the systems and techniques described above herein may be implemented in digital electronic circuit systems, integrated circuit systems, field-programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), application-specific standard products (ASSPs), systems on chips (SOCs), complex programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various embodiments may include: being implemented in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which may be a dedicated or general-purpose programmable processor that can receive data and instructions from a storage system, at least one input device, and at least one output device, and transmit data and instructions to the storage system, the at least one input device, and the at least one output device.

[0135] The program code for implementing the method of the present disclosure may be written in any combination of one or more programming languages. These program codes may be provided to a processor or controller of a general-purpose computer, a special-purpose computer, or other programmable data processing device, so that the program code, when executed by the processor or controller, enables the functions / operations specified in the flow chart and / or block diagram to be implemented. The program code may be executed entirely on the machine, partially on the machine, partially on the machine and partially on a remote machine as a stand-alone software package, or entirely on a remote machine or server.

[0136] In the context of the present disclosure, a machine-readable medium may be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, device, or equipment. A machine-readable medium may be a machine-readable signal medium or a machine-readable storage medium. A machine-readable medium may include, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, device, or equipment, or any suitable combination of the foregoing. A more specific example of a machine-readable storage medium may include an electrical connection based on one or more lines, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0137] To provide interaction with a user, the systems and techniques described herein can be implemented on a computer having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and pointing device (e.g., a mouse or trackball) through which the user can provide input to the computer. Other types of devices can also be used to provide interaction with the user; for example, the feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including acoustic input, voice input, or tactile input).

[0138] The systems and techniques described herein may be implemented in a computing system that includes back-end components (e.g., as a data server), or a computing system that includes middleware components (e.g., an application server), or a computing system that includes front-end components (e.g., a user computer with a graphical user interface or a web browser through which a user can interact with implementations of the systems and techniques described herein), or a computing system that includes any combination of such back-end components, middleware components, or front-end components. The components of the system may be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: a local area network (LAN), a wide area network (WAN), and the Internet.

[0139] A computer system may include a client and a server. The client and the server are generally remote from each other and usually interact through a communication network. The relationship of client and server is generated by computer programs running on respective computers and having a client-server relationship with each other. The server may be a cloud server, a server of a distributed system, or a server combined with a blockchain.

[0140] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps recorded in this disclosure can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solutions disclosed in this disclosure can be achieved, and this document does not limit this.

[0141] The above specific implementations do not constitute a limitation on the protection scope of the present disclosure. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A temperature control method for a polysilicon reactor, wherein the polysilicon reactor comprises multiple layers of silicon rods arranged in sequence from the inside to the outside, characterized in that: The method comprises: Acquire first voltage data of the first silicon rod group and second voltage data of the second silicon rod group at the start time of a first time period, wherein the first time period is any time period among multiple production time periods of the polysilicon reactor, the first silicon rod group is at least one layer of silicon rods in the multi-layer silicon rods, the second silicon rod group is at least one layer of silicon rods in the multi-layer silicon rods, and the second silicon rod group is arranged around the first silicon rod group; When the operation state of the polysilicon reactor is normal, and the voltage difference between the first voltage data and the second voltage data is greater than a first preset threshold, the first current increment of the first silicon rod group in the first time period is reduced, the second current increment of the second silicon rod group in the first time period is increased, and the operation state of the polysilicon reactor is adjusted from the normal state to the abnormal state; The current of the first silicon rod group is increased according to the decreased first current increment, and the current of the second silicon rod group is increased according to the increased second current increment.

2. The method according to claim 1, characterized in that After increasing the current of the first silicon rod group according to the reduced first current increment and increasing the current of the second silicon rod group according to the increased second current increment, the method further includes: Acquire, at the beginning of a second time period, third voltage data of the first silicon rod group and fourth voltage data of the second silicon rod group, wherein the second time period and the first time period are adjacent time periods; When the operating state of the polysilicon reactor is the abnormal state, and the voltage difference between the third voltage data and the fourth voltage data is less than or equal to a second preset threshold, the current of the first silicon rod group is increased according to the third current increment of the first silicon rod group in the second time period, the current of the second silicon rod group is increased according to the fourth current increment of the second silicon rod group in the second time period, and the operating state of the polysilicon reactor is adjusted from the abnormal state to the normal state, wherein the first preset threshold is greater than the second preset threshold.

3. The method according to claim 2, characterized in that After acquiring the third voltage data of the first silicon rod group and the fourth voltage data of the second silicon rod group at the beginning of the second time period, the method further includes: When the operation state of the polysilicon reactor is the abnormal state, and the voltage difference between the third voltage data and the fourth voltage data is greater than the second preset threshold, reducing the third current increment and increasing the fourth current increment; The current of the first silicon rod group is increased according to the lowered third current increment, and the current of the second silicon rod group is increased according to the increased fourth current increment.

4. The method according to claim 3, characterized in that The decrease of the third current increment is less than or equal to the decrease of the first current increment; and / or, The increase of the fourth current increment is less than or equal to the increase of the second current increment.

5. The method according to claim 3, characterized in that: The decrease of the first current increment is greater than the increase of the second current increment; The decrease of the third current increment is greater than the increase of the fourth current increment.

6. The method according to any one of claims 1 to 5, characterized in that When the number of the first silicon rod group and the number of the second silicon rod group are not equal: The first voltage data is the total voltage of the first silicon rod group, the second voltage data is the product of the total voltage of the second silicon rod group and a first correction parameter, and the first correction parameter is the ratio of the number of silicon rods in the first silicon rod group to the number of silicon rods in the second silicon rod group; or, The first voltage data is the product of the total voltage of the first silicon rod group and a second correction parameter, the second voltage data is the total voltage of the second silicon rod group, and the second correction parameter is the ratio of the number of silicon rods in the second silicon rod group to the number of silicon rods in the first silicon rod group.

7. The method according to any one of claims 1 to 5, characterized in that The multi-layer silicon rods include a first layer of silicon rods, a second layer of silicon rods, a third layer of silicon rods and a fourth layer of silicon rods arranged in sequence from the inside to the outside; The first silicon rod group is the first layer of silicon rods, and the second silicon rod group is the third layer of silicon rods; and / or, The first silicon rod group is the second layer of silicon rods, and the second silicon rod group is the fourth layer of silicon rods.

8. A temperature control device for a polysilicon reactor, the polysilicon reactor comprising multiple layers of silicon rods arranged in sequence from the inside to the outside, characterized in that: The device comprises: A first acquisition module is used to acquire first voltage data of a first silicon rod group and second voltage data of a second silicon rod group at a start time of a first time period, wherein the first time period is any time period among multiple production time periods of the polysilicon reactor, the first silicon rod group is at least one layer of silicon rods in the multi-layer silicon rods, the second silicon rod group is at least one layer of silicon rods in the multi-layer silicon rods, and the second silicon rod group is arranged around the first silicon rod group; a first adjustment module, configured to, when the operating state of the polysilicon reactor is normal and the voltage difference between the first voltage data and the second voltage data is greater than a first preset threshold, reduce a first current increment of the first silicon rod group in the first time period, increase a second current increment of the second silicon rod group in the first time period, and adjust the operating state of the polysilicon reactor from the normal state to an abnormal state; The first execution module is configured to increase the current of the first silicon rod group according to the decreased first current increment, and to increase the current of the second silicon rod group according to the increased second current increment.

9. An electronic device, characterized in that: The method comprises a processor, a memory, and a computer program stored in the memory and executable on the processor, wherein the computer program implements the steps of the method according to any one of claims 1 to 7 when executed by the processor.

10. A readable storage medium, characterized in that: The readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 7 are implemented.

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