Electro-absorption modulated laser and its manufacturing method

Abstract

The present disclosure provides an electro-absorption modulated laser and a method for manufacturing the same, including: a substrate; an active layer formed on the substrate, and the surface of the active layer is divided into a first region, a second region, a third region, and a fourth region; wherein, the active layer in the first region constitutes a first modulator, the active layer in the second region constitutes a second modulator, the active layer in the third region constitutes a first laser, and the active layer in the fourth region constitutes a second laser; a passive layer formed on the substrate, and the surface of the passive layer is divided into a fifth region, a sixth region, and a seventh region; a grating disposed on the passive layer; wherein, the passive layer and the grating in the fifth region constitute a first front grating, the passive layer and the grating in the sixth region constitute a second front grating, and the passive layer and the grating in the seventh region constitute a rear grating; wherein, the first modulator, the first laser, and the first front grating and the second modulator, the second laser, and the second front grating achieve dual-end emission of laser by sharing the rear grating.

Description

Technical Field

[0001] The present disclosure relates to the technical field of semiconductor optoelectronic integrated devices, and particularly to an electro-absorption modulated laser and a method for manufacturing the same. Background Art

[0002] With the rapid increase in the demand for network bandwidth in 5G networks and data centers, the network system has put forward higher requirements for the performance of optical emission chips. To solve the bandwidth problem of optical emission chips, it is not only necessary to expand the utilization range of optical emission wavelengths, but also to increase the integration of optical reflection chips. However, improving the bandwidth of optical reflection chips by integrating multiple materials not only requires multiple growths of active layers, but also is easily oxidized when exposed to air, forming defects and affecting the reliability of optical emission chips. Summary of the Invention

[0003] The present disclosure provides an electro-absorption modulated laser and a method for manufacturing the same to improve the problem that the integrated materials are oxidized when exposed to air, affecting the reliability of optical emission chips.

[0004] One aspect of the present disclosure provides an electro-absorption modulated laser, including: an active layer formed on a substrate, and the surface of the active layer is divided into a first region, a second region, a third region, and a fourth region; wherein, the active layer in the first region constitutes a first modulator, the active layer in the second region constitutes a second modulator, the active layer in the third region constitutes a first laser, and the active layer in the fourth region constitutes a second laser; a passive layer formed on the substrate, and the surface of the passive layer is divided into a fifth region, a sixth region, and a seventh region; a grating disposed on the passive layer; wherein, the passive layer in the fifth region and the grating constitute a first front grating, the passive layer in the sixth region and the grating constitute a second front grating, and the passive layer in the seventh region and the grating constitute a rear grating; wherein, the first modulator, the first laser, and the first front grating and the second modulator, the second laser, and the second front grating achieve double-ended laser emission by sharing the rear grating.

[0005] According to an embodiment of the present disclosure, a first SiO2 layer is grown on the substrates of the first laser, the second laser, the first front grating, the second front grating, and the rear grating, so that the wavelengths of the light of the first modulator and the second modulator are shorter than the wavelengths of the light in the above other regions.

[0006] According to an embodiment of the present disclosure, the active layer includes a first confinement layer, a multi-quantum well layer, and a second confinement layer.

[0007] According to an embodiment of the present disclosure, a second SiO2 layer is grown on the second confinement layer to protect the active layer from being etched.

[0008] According to an embodiment of the present disclosure, the material of the multi-quantum well layer is InGaAsP or InGaAlAs.

[0009] According to an embodiment of the present disclosure, an electrical isolation trench is used to achieve electrical isolation between a first modulator, a second modulator, a first laser, a second laser, a first front grating, a second front grating, and a rear grating.

[0010] According to an embodiment of the present disclosure, a cladding layer, an electrical contact layer, and a P-type electrode are respectively grown on the active layer and the passive layer; an N-type electrode is provided on a surface of the substrate away from the active layer.

[0011] Another aspect of the present disclosure provides a method for manufacturing an electro-absorption modulated laser, including: growing a first SiO2 layer on a partial region of a substrate; growing an active layer on the substrate and the first SiO2 layer; wherein, regions not covered by the first SiO2 layer are a first modulator and a second modulator; growing a second SiO2 layer on a partial region of the active layer; wherein, regions covered by the second SiO2 layer include the first modulator, the second modulator, the first laser, and the second laser, and regions not covered by the second SiO2 layer are a first front grating, a second front grating, and a rear grating; respectively etching the active layers of the first front grating, the second front grating, and the rear grating; growing a passive layer on the substrate corresponding to the first front grating, the second front grating, and the rear grating; fabricating gratings on the passive layer; growing a cladding layer, an electrical contact layer, and a P-type electrode on the first modulator, the first front grating, the first laser, the rear grating, the second laser, the second front grating, and the second modulator; etching an electrical isolation trench on the electrical contact layer to achieve electrical isolation between the first modulator, the second modulator, the first laser, the second laser, the first front grating, the second front grating, and the rear grating; fabricating an N-type electrode on a surface of the substrate away from the active layer.

[0012] According to an embodiment of the present disclosure, both the first SiO2 layer and the second SiO2 layer are etched to form more than two selected area mask patterns, the thickness of the selected area mask patterns is 100 nm to 300 nm, the width is 5 μm to 30 μm, and the interval between the selected area mask patterns is 10 μm to 50 μm.

[0013] According to an embodiment of the present disclosure, the cladding layer and the electrical contact layer are etched to form an inverted mesa shallow ridge waveguide structure.

[0014] The above at least one technical solution adopted in the embodiment of the present disclosure at least includes the following beneficial effects: (1) In the embodiment of the present disclosure, by growing the active layer once, the growth of the active layers of the modulator and the laser can be completed simultaneously, saving one growth compared with the traditional material butt-joint technology, and solving the problem that the active layer is oxidized when exposed to air; (2) Integrating two modulated lasers together and sharing the rear grating region to emit laser from two end faces, achieving the effect of doubling the laser rate and wavelength tuning performance, improving the reliability of the laser, and saving costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] To more fully understand the present disclosure and its advantages, reference will now be made to the following description taken in conjunction with the accompanying drawings, in which:

[0016] Figure 1 FIG. schematically shows an overall structural diagram of an electro-absorption modulated laser provided by an embodiment of the present disclosure;

[0017] Figure 2 FIG. schematically shows a side view of an electro-absorption modulated laser provided by an embodiment of the present disclosure;

[0018] Figure 3 FIG. schematically shows a flowchart of a preparation method of an electro-absorption modulated laser provided by an embodiment of the present disclosure;

[0019] Figure 4 FIG. schematically shows a front view of a corresponding structure of a first SiO2 layer grown on a partial area of a substrate provided by an embodiment of the present disclosure;

[0020] Figure 5 FIG. schematically shows a top view of a corresponding structure of a first SiO2 layer grown on a partial area of a substrate provided by an embodiment of the present disclosure;

[0021] Figure 6 FIG. schematically shows a top view of a corresponding structure of a second SiO2 layer grown on a partial area of the active layer provided by an embodiment of the present disclosure;

[0022] Figure 7 FIG. schematically shows a front view of corresponding structures of passive layers grown on a substrate corresponding to the first front grating, the second front grating, and the rear grating respectively provided by an embodiment of the present disclosure.

[0023]

DESCRIPTION OF THE REFERENCE NUMERALS

[0024] 1, first modulator; 2, first front grating; 3, first laser; 4, second modulator; 5, second front grating; 6, second laser; 7, rear grating; 10, substrate; 11, first SiO2 layer; 12, active layer; 13, second SiO2 layer; 14, passive layer; 15, grating; 16, cladding layer; 17, electrical contact layer; 18, electrical isolation trench; 19, P-type electrode; 20, N-type electrode. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0025] To make the objectives, technical solutions, and advantages of the present disclosure clearer and more understandable, the following further elaborates on the present disclosure in detail with reference to specific embodiments and the accompanying drawings. Apparently, the described embodiments are only a part of the embodiments of the present disclosure, rather than all of them. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present disclosure without creative efforts belong to the scope of protection of the present disclosure.

[0026] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "including", "comprising", etc. used herein indicate the presence of the described features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0027] In the present disclosure, unless otherwise clearly defined and limited, terms such as "installed", "connected", "joined", "fixed", etc. should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection, an electrical connection, or capable of communicating with each other; it can be a direct connection or indirectly connected through an intermediate medium, and can be the internal communication of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0028] In the description of the present disclosure, it should be understood that the orientation or positional relationships indicated by terms such as "longitudinal", "length", "circumferential", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", etc. are based on the orientation or positional relationships shown in the drawings. It is only for the convenience of describing the present disclosure and simplifying the description, rather than indicating or implying that the described subsystems or elements must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present disclosure.

[0029] Throughout the drawings, the same elements are denoted by the same or similar reference numerals. When it may cause confusion in the understanding of the present disclosure, conventional structures or configurations will be omitted. Also, the shapes, sizes, and positional relationships of the components in the drawings do not reflect the actual sizes, proportions, and actual positional relationships. Additionally, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claims.

[0030] Similarly, to streamline the present disclosure and assist in understanding one or more of the various disclosed aspects, in the above description of the exemplary embodiments of the present disclosure, the various features of the present disclosure are sometimes grouped together into a single embodiment, figure, or description thereof. Descriptions with reference to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples" mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present disclosure. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0031] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present disclosure, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically defined.

[0032] With the rapid increase in the demand for network bandwidth in 5G networks and data centers, the network system has put forward higher requirements for the performance of optical emission chips. To solve the bandwidth problem of optical emission chips, it is not only necessary to expand the utilization range of optical emission wavelengths but also to increase the integration of optical reflection chips. However, improving the bandwidth of optical reflection chips by integrating multiple materials not only requires multiple growths of the active layer but also is easily oxidized when exposed to air, forming defects and affecting the reliability of optical emission chips.

[0033] The present disclosure provides an electro-absorption modulated laser and a method for preparing the same to address the problem that the integrated materials are oxidized when exposed to air, affecting the reliability of optical emission chips. Figure 1 The overall structural schematic diagram of the electro-absorption modulated laser provided by the embodiment of the present disclosure is schematically shown.

[0034] As Figure 1As shown in the figure, the electro-absorption modulated laser provided by the embodiments of the present disclosure includes: an active layer 12 formed on a substrate 10, and the surface of the active layer 12 is divided into a first region, a second region, a third region, and a fourth region; wherein, the active layer 12 in the first region constitutes a first modulator 1, the active layer 12 in the second region constitutes a second modulator 4, the active layer 12 in the third region constitutes a first laser 3, and the active layer 12 in the fourth region constitutes a second laser 6; a passive layer 14 formed on the substrate 10, and the surface of the passive layer 14 is divided into a fifth region, a sixth region, and a seventh region; a grating 15 disposed on the passive layer 14; wherein, the passive layer 14 and the grating 15 in the fifth region constitute a first front grating 2, the passive layer 14 and the grating 15 in the sixth region constitute a second front grating 5, and the passive layer 14 and the grating 15 in the seventh region constitute a rear grating 7; wherein, the first modulator 1, the first laser 3, and the first front grating 2 and the second modulator 4, the second laser 6, and the second front grating 5 achieve double-ended laser emission through the shared rear grating 7.

[0035] Specifically, the substrate 10 can be an N-type indium phosphide substrate 10. The material of the passive layer 14 can be InGaAsP, and the bandgap wavelength of the passive layer 14 is 1400 nm.

[0036] In the embodiments of the present disclosure, a first SiO2 layer 11 is grown on the substrate 10 of the first laser 3, the second laser 6, the first front grating 2, the second front grating 5, and the rear grating 7, so that the wavelengths of the light of the first modulator 1 and the second modulator 4 are shorter than the wavelengths of the light in the other regions. Specifically, the wavelengths of the first modulator 1 and the second modulator 4 are 20 μm to 100 μm shorter than the wavelengths of the first laser 3 and the second laser 6, and the bandgap wavelengths of the first front grating 2, the second front grating 5, and the rear grating 7 are 90 nm to 200 nm shorter than the wavelengths of the first laser 3 and the second laser 6.

[0037] The active layer 12 includes a first confinement layer, a multiple quantum well layer, and a second confinement layer. In the embodiments of the present disclosure, the material of the multiple quantum well layer is InGaAsP or InGaAlAs. The bandgap wavelengths of the first confinement layer and the second confinement layer are both 10 nm to 100 nm smaller than the bandgap wavelength of the multiple quantum well layer. In an embodiment of the present disclosure, the bandgap wavelengths of the first confinement layer and the second confinement layer are both 1200 nm, and the bandgap wavelength of the multiple quantum well layer is 1550 nm. In other embodiments of the present disclosure, the bandgap wavelengths can be set according to actual needs as long as the bandgap wavelengths of the first confinement layer and the second confinement layer are both smaller than the bandgap wavelength of the multiple quantum well layer, and no further limitations are provided herein.

[0038] A second SiO2 layer 13 is grown on the second confinement layer to protect the active layer 12 from being etched. Specifically, both the first SiO2 layer 11 and the second SiO2 layer 13 are etched to form more than two selected-area mask patterns. The thickness of the selected-area mask patterns is 100 nm to 300 nm, the width is 5 μm to 30 μm, and the interval between adjacent selected-area mask patterns is 10 μm to 50 μm.

[0039] The electro-absorption modulated laser provided by the embodiment of the present disclosure further includes an electrical isolation trench 18 for achieving electrical isolation between the first modulator 1, the second modulator 4, the first laser 3, the second laser 6, the first front grating 2, the second front grating 5, and the rear grating 7.

[0040] In the embodiment of the present disclosure, a cladding layer 16, an electrical contact layer 17, and a P-type electrode 19 are respectively grown on the active layer 12 and the passive layer 14, and an N-type electrode 20 is disposed on a surface of the substrate 10 away from the active layer 12. Figure 2 A side view of the electro-absorption modulated laser provided by the embodiment of the present disclosure is schematically shown. As Figure 2 shown, the cladding layer 16 and the electrical contact layer 17 are grown by metalorganic chemical vapor deposition (MOCVD). The cladding layer 16 is a P-type Zn-doped InP cladding layer 16, the material of the electrical contact layer 17 is InGaAs, the thickness of the cladding layer 16 is 1500 nm, and the thickness of the electrical contact layer 17 is 200 nm. In some other embodiments of the present disclosure, other growth methods, materials, and thicknesses may also be used as long as the purposes of the embodiments of the present disclosure can be satisfied, and no limitation is made herein.

[0041] Based on the same inventive concept, another aspect of the present disclosure provides a method for manufacturing an electro-absorption modulated laser. Figure 3 A flowchart of the method for manufacturing an electro-absorption modulated laser provided by the embodiment of the present disclosure is schematically shown. As Figure 3 shown, it specifically includes:

[0042] In operation S101, a first SiO2 layer 11 is grown on a partial region of the substrate 10.

[0043] Specifically, Figure 4 A front view of the corresponding structure of growing the first SiO2 layer 11 on a partial region of the substrate 10 provided by the embodiment of the present disclosure is schematically shown. Figure 5 A top view of the corresponding structure of growing the first SiO2 layer 11 on a partial region of the substrate 10 provided by the embodiment of the present disclosure is schematically shown. From Figure 4 and Figure 5 it can be seen that the remaining regions not covered by the first SiO2 layer 11 are the first modulator 1 and the second modulator 4.

[0044] In operation S102, an active layer 12 is grown on the substrate 10 and the first SiO2 layer 11; among them, the regions not covered by the first SiO2 layer 11 are the first modulator 1 and the second modulator 4.

[0045] Specifically, the first SiO2 layer 11 can be etched by photolithography or wet etching to form a selected area mask pattern. After cleaning the substrate 10 and the selected area mask pattern, the active layer 12 is grown by using a metal organic chemical vapor deposition equipment (MOCVD).

[0046] In operation S103, a second SiO2 layer 13 is grown on a partial area of the active layer 12; among them, the regions covered by the second SiO2 layer 13 include the first modulator 1, the second modulator 4, the first laser 3, and the second laser 6, and the regions not covered by the second SiO2 layer 13 are the first front grating 2, the second front grating 5, and the rear grating 7.

[0047] Specifically, Figure 6 Schematically shows a top view of the corresponding structure of growing the second SiO2 layer 13 on a partial area of the active layer 12 provided by an embodiment of the present disclosure. After etching the selected area mask pattern, the growth of the second SiO2 layer 13 is carried out.

[0048] In operation S104, the active layer 12 of the first front grating 2, the second front grating 5, and the rear grating 7 is etched respectively.

[0049] Specifically, an inductively coupled plasma etching machine (ICP) is used for etching. In some other embodiments of the present disclosure,

[0050] In operation S105, passive layers 14 are grown on the substrate 10 corresponding to the first front grating 2, the second front grating 5, and the rear grating 7 respectively.

[0051] Specifically, Figure 7 Schematically shows a front view of the corresponding structure of growing the passive layers 14 on the substrate 10 corresponding to the first front grating 2, the second front grating 5, and the rear grating 7 provided by an embodiment of the present disclosure. Among them, the material of the passive layer 14 can be InGaAsP, and the bandgap wavelength of the passive layer 14 is 1400 nm.

[0052] In operation S106, a grating 15 is fabricated on the passive layer 14.

[0053] In operation S107, a cladding layer 16, an electrical contact layer 17, and a P-type electrode 19 are grown on the first modulator 1, the first front grating 2, the first laser 3, the rear grating 7, the second laser 6, the second front grating 5, and the second modulator 4.

[0054] Specifically, the cladding layer 16 and the electrical contact layer 17 are etched to form an inverted mesa shallow ridge waveguide structure. By preparing the inverted mesa shallow ridge waveguide structure, the convergence effect of the injection current is improved.

[0055] In operation S108, an electrical isolation trench 18 is etched on the electrical contact layer 17 to achieve electrical isolation between the first modulator 1, the second modulator 4, the first laser 3, the second laser 6, the first front grating 2, the second front grating 5, and the rear grating 7.

[0056] Specifically, an isolation trench pattern is lithographed on the electrical contact layer 17 using a 3-μm-thick photoresist. The width of the electrical isolation trench 18 is 50 μm, and He ions are implanted into the electrical isolation trench 18 to achieve electrical isolation between regions.

[0057] In operation S109, an N-type electrode 20 is prepared on the side of the substrate 10 away from the active layer 12.

[0058] It should be noted that the embodiment part of the preparation method of the electro-absorption modulated laser corresponds to the embodiment part of the electro-absorption modulated laser. The specific implementation details and the technical effects brought are similar or the same as those in the embodiment part of the electro-absorption modulated laser, and will not be elaborated here.

[0059] The electro-absorption modulated laser and its preparation method provided by the embodiments of the present disclosure can complete the growth of the active layers of both the modulator and the laser by growing the active layer once, saving one growth compared to the traditional material butt-joint technology, and at the same time solving the problem of oxidation of the active layer exposed to the air. The electro-absorption modulated laser and its preparation method provided by the embodiments of the present disclosure also integrate two modulated lasers together, sharing the rear grating region, realizing laser emission from two end faces, doubling the laser rate and wavelength tuning performance, improving the reliability of the laser, and saving costs.

[0060] The specific embodiments described above further elaborate on the technical solutions of the present disclosure. It should be understood that the above are only specific embodiments of the present disclosure and are not used to limit the present disclosure. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present disclosure shall be included within the protection scope of the present disclosure.

Claims

1. An electro-absorption modulated laser, characterized in that, Including: A substrate (10); from one end to the other end of the substrate (10), a first modulator (1), a first front grating (2), a first laser (3), a rear grating (7), a second laser (6), a second front grating (5), and a second modulator (4) are sequentially arranged on the surface of the substrate (10); An active layer (12) formed on the substrate (10), the surface of the active layer (12) being divided into a first region, a second region, a third region, and a fourth region; wherein, the active layer (12) in the first region constitutes the first modulator (1), the active layer (12) in the second region constitutes the second modulator (4), the active layer (12) in the third region constitutes the first laser (3), and the active layer (12) in the fourth region constitutes the second laser (6); A passive layer (14) formed on the substrate (10), the surface of the passive layer (14) being divided into a fifth region, a sixth region, and a seventh region; A grating (15) disposed on the passive layer (14); wherein, the passive layer (14) in the fifth region and the grating (15) constitute the first front grating (2), the passive layer (14) in the sixth region and the grating (15) constitute the second front grating (5), and the passive layer (14) in the seventh region and the grating (15) constitute the rear grating (7); Wherein, the first modulator (1), the first laser (3), and the first front grating (2) and the second modulator (4), the second laser (6), and the second front grating (5) achieve double-ended laser emission by sharing the rear grating (7); A first SiO2 layer (11) is grown on the substrate (10) of the first laser (3), the second laser (6), the first front grating (2), the second front grating (5), and the rear grating (7), so that the wavelength of the light of the first modulator (1) and the second modulator (4) is shorter than the wavelength of the light of the first laser (3), the second laser (6), the first front grating (2), the second front grating (5), and the rear grating (7); The active layer (12) includes a first confinement layer, a multi-quantum well layer, and a second confinement layer, and the bandgap wavelength of the first confinement layer and the bandgap wavelength of the second confinement layer are both 10 nm to 100 nm smaller than the bandgap wavelength of the multi-quantum well layer; A second SiO2 layer (13) is grown on the second confinement layer for protecting the active layer (12) from being etched.

2. The electro-absorption modulated laser according to claim 1, characterized in that, The material of the multi-quantum well layer is InGaAsP or InGaAlAs.

3. The electro-absorption modulated laser according to claim 1, characterized in that, Further including: An electrical isolation trench (18) for achieving electrical isolation between the first modulator (1), the second modulator (4), the first laser (3), the second laser (6), the first front grating (2), the second front grating (5), and the rear grating (7).

4. The electro-absorption modulated laser according to claim 1, characterized in that, A cladding layer (16), an electrical contact layer (17), and a P-type electrode (19) are respectively grown on the active layer (12) and the passive layer (14); an N-type electrode (20) is provided on a side of the substrate (10) away from the active layer (12).

5. A method for preparing an electro-absorption modulated laser, which is used to prepare the electro-absorption modulated laser according to any one of claims 1-4, characterized in that, Comprising: Growing a first SiO2 layer (11) on a partial region of the substrate (10); Growing an active layer (12) on the substrate (10) and the first SiO2 layer (11); wherein, regions not covered by the first SiO2 layer (11) are a first modulator (1) and a second modulator (4); Growing a second SiO2 layer (13) on a partial region of the active layer (12); wherein, regions covered by the second SiO2 layer (13) include the first modulator (1), the second modulator (4), a first laser (3), and a second laser (6), and regions not covered by the second SiO2 layer (13) are a first front grating (2), a second front grating (5), and a rear grating (7); Etching the active layer (12) of the first front grating (2), the second front grating (5), and the rear grating (7) respectively; Growing a passive layer (14) on the substrate (10) corresponding to the first front grating (2), the second front grating (5), and the rear grating (7) respectively; Fabricating a grating on the passive layer (14); Growing a cladding layer (16), an electrical contact layer (17), and a P-type electrode (19) on the first modulator (1), the first front grating (2), the first laser (3), the rear grating (7), the second laser (6), the second front grating (5), and the second modulator (4); Etching electrical isolation trenches on the electrical contact layer (17) to achieve electrical isolation between the first modulator (1), the second modulator (4), the first laser (3), the second laser (6), the first front grating (2), the second front grating (5), and the rear grating (7); Fabricating an N-type electrode (20) on a side of the substrate (10) away from the active layer (12).

6. The manufacturing method of the electro-absorption modulated laser according to claim 5, characterized in that, The first SiO2 layer (11) and the second SiO2 layer (13) are etched to form more than two selected area mask patterns, the thickness of the selected area mask patterns is 100 nm to 300 nm, the width is 5 μm to 30 μm, and the interval between each of the selected area mask patterns is 10 μm to 50 μm.

7. The manufacturing method of the electro-absorption modulated laser according to claim 6, characterized in that, Etching the cladding layer (16) and the electrical contact layer (17) to form an inverted mesa shallow ridge waveguide structure.

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