Encapsulant film composition, encapsulant film, and photovoltaic module

Abstract

The application provides a packaging adhesive film composition, a packaging adhesive film and a photovoltaic module. The packaging adhesive film composition comprises a base resin and a high dielectric material, wherein the dielectric constant of the high dielectric material is greater than or equal to 10; the high dielectric material comprises any one or more of an organic high polymer material, a carbon inorganic material and a metal inorganic material. According to the technical scheme of the application, the high dielectric material is distributed in the base resin in the packaging adhesive film composition, so that the capacitance effect of the packaging adhesive film is greatly enhanced, a certain amount of electric charge can be stored in the presence of a potential difference, so as to reduce the migration of the electric charge to the surface of the battery sheet, and the PID problem of the photovoltaic module is effectively inhibited.

Description

Technical Field

[0001] This invention relates to the field of photovoltaic technology, and more specifically, to an encapsulating film composition, an encapsulating film, and a photovoltaic module. Background Technology

[0002] Potential-induced degradation (PID) in photovoltaic (PV) modules has been a persistent pain point in the PV industry for many years. When this problem occurs in the module array of a PV power plant, it leads to a significant drop in the power plant's output power, causing substantial losses. The industry has conducted in-depth research on the causes of the PID effect in PV modules for many years, and different explanations exist for its formation mechanism, including PID-s, PID-p, and PID-c. PID-p, specifically degradation caused by cell surface polarization, manifests as a severe decrease in the module's open-circuit voltage (Voc) and short-circuit current (Ish), while the fill factor (FF) does not decrease significantly and is recoverable to some extent. This differs from the severe FF decrease in PID-s and the irrecoverable degradation in PID-c. The main cause of PID-p is the high potential difference between the cell and the frame, leading to leakage current in the system. Positive charges gradually accumulate on the cell surface, neutralizing the fixed negative charges in the passivation layer, causing the passivation effect to disappear. Consequently, the interfacial load increases significantly, resulting in a substantial decrease in output power / current / voltage.

[0003] The industry has focused on solving the PID-p problem for many years. From the perspective of the battery cell, increasing the surface polarization protection can improve the battery's ability to receive light, but this may affect the battery's light absorption. Improving the encapsulation film has a smaller impact. For example, improving the insulation performance (high volume resistivity) of the encapsulation film to reduce the ability of charge to penetrate the encapsulation film; increasing the crosslinking density of the encapsulation film to improve its barrier properties; and adding components that can complex and adsorb cationic compounds to the encapsulation film to reduce their migration to the battery surface are all less than ideal.

[0004] Patents CN103254802, CN104744793, and CN108778991 disclose various metal ion scavengers, including aluminosilicates, hydrated oxides, and multivalent metal acid salts. Adding these ion scavengers to photovoltaic encapsulation films can capture Na+ ions. + K + Ca 2+ The method uses migratable metal cations to prevent them from migrating to the surface of the solar cell and causing passivation failure, thereby suppressing the PID problem. However, if the amount of ion trap added is too small, the anti-PID effect will be insignificant; if the amount added is too large, since they are all inorganic particles, it will have a significant negative impact on the light transmittance of the film.

[0005] Patents CN109554141 and CN109810639 disclose various crosslinking promoters that can further increase the crosslinking density of the encapsulating film, thereby improving the barrier properties of the encapsulating film, inhibiting the migration of ions in the film, and thus reducing the occurrence of PID problems in the system. However, this approach has limited effectiveness in suppressing PID phenomena, particularly in improving the charge migration problem of PID-p. Summary of the Invention

[0006] The main objective of this invention is to provide an encapsulating film composition, an encapsulating film, and a photovoltaic module to solve the problem of insufficient anti-PID effect of photovoltaic encapsulating films in the prior art.

[0007] To achieve the above objectives, according to one aspect of the present invention, an encapsulating film composition is provided, comprising a matrix resin and a high-dielectric material, wherein the dielectric constant of the high-dielectric material is ≥10; the high-dielectric material comprises any one or more of organic polymer materials, carbon inorganic materials, and metallic inorganic materials.

[0008] Furthermore, the dielectric constant of the metallic inorganic material is ≥100;

[0009] Preferably, the particle size D50 of the metallic inorganic material is 0.01–10 μm;

[0010] Preferably, the inorganic metallic material is selected from any one or more of lead magnesium niobate-lead titanate, lead zirconate titanate lanthanum, lead zirconate titanate, barium titanate, strontium titanate, potassium sodium niobate, sodium niobate, and titanium dioxide.

[0011] Furthermore, the metallic inorganic materials and carbon inorganic materials are modified with organic materials; preferably, the organic materials include any one or more of polyolefins, epoxy resins and silane coupling agents.

[0012] Furthermore, the dielectric constants of organic polymer materials and carbon inorganic materials are 10–3000;

[0013] Preferably, the particle size D50 of the organic polymer material and the carbon inorganic material is 0.01–10 μm;

[0014] Preferably, the carbon inorganic material includes any one or more of carbon nanotubes, graphite and carbon fiber.

[0015] Furthermore, the organic polymer material is selected from any one or more of polyvinylidene chloride and polyvinyl alcohol resin.

[0016] Furthermore, the high dielectric material comprises 0.01 to 5% of the matrix resin by mass, preferably 0.01 to 1%.

[0017] Further, the matrix resin is a polyolefin resin, preferably a vinyl resin, and more preferably, the matrix resin includes any one or more of ethylene-vinyl acetate polymer and ethylene-α-olefin copolymer.

[0018] Furthermore, the encapsulating film composition also includes additives, optionally including any one or more of crosslinking agents, co-crosslinking agents, tackifiers, and light stabilizers.

[0019] According to another aspect of the present invention, an encapsulating film is provided, which is prepared from any of the encapsulating film compositions described above.

[0020] According to another aspect of the present invention, a photovoltaic module is provided, the photovoltaic module comprising the above-described encapsulating film.

[0021] By applying the technical solution of the present invention, the addition of high dielectric material distributed in the matrix resin in the encapsulation film composition can greatly enhance the capacitance effect of the encapsulation film. Under the condition of potential difference, it can store a certain amount of charge, thereby reducing charge migration to the surface of the cell and effectively suppressing the PID problem of photovoltaic modules. Detailed Implementation

[0022] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The present invention will now be described in detail with reference to the embodiments.

[0023] As analyzed in the background section of this application, there is potential-induced degradation (PID) in the prior art of photovoltaic modules, which leads to a huge power loss. The anti-PID effect of the encapsulating film is not good. In order to solve this problem, this application provides an encapsulating film composition, an encapsulating film, and a photovoltaic module.

[0024] According to a typical embodiment of this application, an encapsulating film composition is provided, the composition comprising a matrix resin and a high dielectric material, wherein the dielectric constant of the high dielectric material is ≥10; wherein the high dielectric material comprises any one or more of organic polymer materials, carbon inorganic materials and metallic inorganic materials.

[0025] The high-dielectric material added to the above-mentioned encapsulating film composition can greatly enhance the capacitance effect of the encapsulating film. Under the condition of potential difference, it can store a certain amount of charge, thereby reducing charge migration to the surface of the cell and effectively suppressing the PID problem of photovoltaic modules.

[0026] The aforementioned metallic inorganic material can be any inorganic material containing metal with a dielectric constant ≥10, such as metal salts or metal oxides. In some embodiments of this application, in order to further improve the anti-PID performance of the encapsulation film composition and considering the overall performance of the encapsulation film, the dielectric constant of the metallic inorganic material is ≥100.

[0027] In some embodiments of this application, to improve resistance to PID and compatibility with the matrix resin, the particle size D50 of the aforementioned inorganic metal material is 0.01–10 μm, for example, 0.2 μm, 0.3 μm, 0.5 μm, 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, or any range between the two. In some preferred embodiments of this application, the inorganic material is selected from any one or more of lead magnesium niobate-lead titanate, lead lanthanum zirconate titanate, lead zirconate titanate, barium titanate, strontium titanate, potassium sodium niobate, sodium niobate, and titanium dioxide, and the encapsulation film containing it has better PID resistance.

[0028] The aforementioned carbon-inorganic materials can be selected from existing technologies, such as any one or more of nanotubes, graphite, and carbon fibers. In some embodiments of this application, to improve compatibility with the matrix resin, the aforementioned carbon-inorganic materials and metallic inorganic materials undergo organic modification treatment; preferably, the organic materials include any one or more of polyolefins, epoxy resins, and silane coupling agents; the modification method can be selected from existing technologies, for example, the modification treatment method is surface grafting modification, or modification into core-shell structured particles with metallic inorganic materials and / or carbon-inorganic materials as the core and organic materials as the shell.

[0029] The aforementioned organic polymer materials can be selected from existing technologies. In some embodiments of this application, the dielectric constants of the organic polymer materials and the carbon-inorganic materials are 10–3000. Preferably, the particle size D50 of the organic polymer materials and the carbon-inorganic materials is 0.01–10 μm, which is beneficial for improving the overall performance of the encapsulation film. For example, the particle size D50 of the inorganic materials is 0.2 μm, 0.3 μm, 0.5 μm, 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, or any range between the two. In some typical embodiments of this application, the aforementioned organic polymer materials are selected from any one or more of polyvinylidene chloride and polyvinyl alcohol resin. Adding these polymer materials significantly improves the anti-PID performance of the encapsulation film. At the same time, the organic polymer encapsulation film has stronger resin system compatibility, avoiding a reduction in the light transmittance of the film.

[0030] To balance the anti-PID performance and overall performance of the encapsulating film, in some embodiments of this application, the high-dielectric material accounts for 0.01% to 5% of the mass of the matrix resin, preferably 0.01% to 1%. Exemplarily, the mass ratio of the high-dielectric material to the matrix resin can be 0.01%, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1%, or any range between these two. The high-dielectric material can be any one of the aforementioned organic polymer materials, carbon inorganic materials, and metallic inorganic materials, or a combination of several.

[0031] The matrix resin can be selected from existing technologies. In some embodiments of this application, the matrix resin is a polyolefin resin with a low dielectric constant, or a vinyl resin. When using a vinyl resin as the matrix resin, the types that can be selected include, but are not limited to, any one or more of ethylene-vinyl acetate polymers and ethylene-α-olefin copolymers.

[0032] Depending on the specific application environment of the encapsulating film, those skilled in the art may add suitable additives according to existing technologies and specific needs; this application does not limit this. In some embodiments of this application, the additives include any one or more of crosslinking agents, co-crosslinking agents, tackifiers, and light stabilizers. The specific types of the aforementioned crosslinking agents and other additives can be selected from existing technologies and will not be elaborated here.

[0033] According to another typical embodiment of this application, an encapsulating film is provided, which is prepared from any of the encapsulating film compositions described above. Because a high-dielectric material is added to the base resin in the encapsulating film composition, the capacitance effect of the encapsulating film is greatly enhanced. In the presence of a potential difference, it can store a certain amount of charge, thereby reducing charge migration to the surface of the solar cell and effectively suppressing the PID problem of photovoltaic modules.

[0034] According to another typical embodiment of this application, a photovoltaic module is provided, which includes the above-mentioned encapsulating film. The encapsulating film is prepared from an encapsulating film composition containing a material with a high dielectric constant and a matrix resin. The high dielectric material therein can greatly enhance the capacitance effect of the encapsulating film, and can store a certain amount of charge in the presence of a potential difference, thereby reducing charge migration to the surface of the solar cells and effectively suppressing the PID problem of the photovoltaic module.

[0035] The beneficial effects that this application can achieve will be further illustrated below with reference to embodiments and comparative examples.

[0036] Example 1

[0037] The composition comprises, by weight, 100 parts of ethylene-vinyl acetate copolymer (Lianhong New Material Technology Co., Ltd., VA mass fraction 28%), 0.1 parts of barium titanate (Aladdin reagent, dielectric constant 120; particle size 5μm), 1 part of triallyl isocyanurate (Hunan Minhe Chemical Co., Ltd.), 0.6 parts of crosslinking agent 2-ethylhexyl carbonate tert-butyl peroxide (Arkema), 0.5 parts of tackifier γ-methacryloyloxypropyltrimethoxysilane (Hubei Jingzhou Jianghan Fine Chemical Co., Ltd.), and 0.2 parts of hindered amine light stabilizer bis-2,2,6,6-tetramethylpiperidinol sebate (Tianjin Lianlong Co., Ltd.). The above raw materials are premixed, melt-extruded, cast into a film, cooled, slit, and wound to prepare the encapsulating film E-1.

[0038] Example 2

[0039] The composition comprises, by weight, 100 parts of ethylene-vinyl acetate copolymer (Lianhong New Material Technology Co., Ltd., VA mass fraction 28%), 1 part of barium titanate (Aladdin reagent, dielectric constant 120; particle size 5 μm), 1 part of triallyl isocyanurate (Hunan Minhe Chemical Co., Ltd.), 0.6 parts of crosslinking agent 2-ethylhexyl carbonate tert-butyl peroxide (Arkema), 0.5 parts of tackifier γ-methacryloyloxypropyltrimethoxysilane (Hubei Jingzhou Jianghan Fine Chemical Co., Ltd.), and 0.2 parts of hindered amine light stabilizer bis-2,2,6,6-tetramethylpiperidinol sebacate (Tianjin Lianlong Co., Ltd.). The above raw materials are premixed, melt extruded, cast into a film, cooled, slit, and wound in the same manner as in Example 1 to prepare the encapsulating film E-2.

[0040] Example 3

[0041] The composition comprises, by weight, 100 parts ethylene-butene copolymer (Dow Chemical), 0.1 parts barium titanate (Aladdin reagent, dielectric constant 120; particle size 5 μm), 1 part triallyl isocyanurate (Hunan Minhe Chemical Co., Ltd.), 0.6 parts crosslinking agent 2-ethylhexyl carbonate tert-butyl peroxide (Arkema), 0.5 parts tackifier γ-methacryloyloxypropyltrimethoxysilane (Hubei Jingzhou Jianghan Fine Chemical Co., Ltd.), and 0.2 parts hindered amine light stabilizer bis-2,2,6,6-tetramethylpiperidinol sebacate (Tianjin Lianlong Co., Ltd.). The above raw materials were premixed, melt-extruded, cast into a film, cooled, slit, and wound in the same manner as in Example 1 to prepare the encapsulating film E-3.

[0042] Example 4

[0043] The composition comprises, by weight, 100 parts of ethylene-vinyl acetate copolymer (Lianhong New Material Technology Co., Ltd., VA mass fraction 28%), 5 parts of titanium dioxide (Cholmours, dielectric constant 170; particle size 10 μm), 1 part of triallyl isocyanurate (Hunan Minhe Chemical Co., Ltd.), 0.6 parts of crosslinking agent 2-ethylhexyl carbonate tert-butyl peroxide (Arkema), 0.5 parts of tackifier γ-methacryloyloxypropyltrimethoxysilane (Hubei Jingzhou Jianghan Fine Chemical Co., Ltd.), and 0.2 parts of hindered amine light stabilizer bis-2,2,6,6-tetramethylpiperidinol sebacate (Tianjin Lianlong Co., Ltd.). The above raw materials are premixed, melt-extruded, cast into a film, cooled, slit, and wound in the same manner as in Example 1 to prepare the encapsulating film E-4.

[0044] Example 5

[0045] The composition comprises, by weight, 100 parts of ethylene-vinyl acetate copolymer (Lianhong New Material Technology Co., Ltd., VA mass fraction 28%), 0.1 parts of lead zirconate titanate (Aladdin reagent, dielectric constant 2510; particle size 1μm), 1 part of triallyl isocyanurate (Hunan Minhe Chemical Co., Ltd.), 0.6 parts of crosslinking agent 2-ethylhexyl carbonate tert-butyl peroxide (Arkema), 0.5 parts of tackifier γ-methacryloyloxypropyltrimethoxysilane (Hubei Jingzhou Jianghan Fine Chemical Co., Ltd.), and 0.2 parts of hindered amine light stabilizer bis-2,2,6,6-tetramethylpiperidinol sebate (Tianjin Lianlong Co., Ltd.). The above raw materials are premixed, melt extruded, cast into a film, cooled, slit, and wound in the same manner as in Example 1 to prepare the encapsulating film E-5.

[0046] Example 6

[0047] The composition comprises, by weight, 100 parts ethylene-octene copolymer (Dow Chemical), 1 part sodium niobate (Aladdin reagent, dielectric constant 209; particle size 0.1 μm), 1 part triallyl isocyanurate (Hunan Minhe Chemical Co., Ltd.), 0.6 parts crosslinking agent 2-ethylhexyl carbonate tert-butyl peroxide (Arkema), 0.5 parts tackifier γ-methacryloyloxypropyltrimethoxysilane (Hubei Jingzhou Jianghan Fine Chemical Co., Ltd.), and 0.2 parts hindered amine light stabilizer bis-2,2,6,6-tetramethylpiperidinol sebate (Tianjin Lianlong Co., Ltd.). The above raw materials are premixed, melt-extruded, cast into a film, cooled, slit, and wound in the same manner as in Example 1 to prepare the encapsulating film E-6.

[0048] Example 7

[0049] The difference from Example 4 is that titanium dioxide (Cholmours, dielectric constant 170; particle size 10 μm) was replaced with the same amount of titanium dioxide (Cholmours, dielectric constant 80; particle size 10 μm) by mass. The raw materials were premixed, melt extruded, cast into a film, cooled, slit, and wound in the same manner as in Example 1 to prepare the encapsulating film E-7.

[0050] Example 8

[0051] The difference from Example 2 is that the amount of barium titanate is 5 parts by weight. The raw materials are premixed, melt extruded, cast into a film, cooled, slit and wound in the same manner as in Example 1 to prepare the encapsulating film E-8.

[0052] Example 9

[0053] The difference from Example 2 is that barium titanate was replaced with the same number of parts by mass of polyvinyl alcohol (Sigma-Aldrich, dielectric constant 12). The raw materials were premixed, melt extruded, cast into a film, cooled, slit and wound in the same manner as in Example 1 to prepare the encapsulating film E-9.

[0054] Example 10

[0055] The difference from Example 2 is that barium titanate was replaced with the same mass fraction of carbon nanotubes (giant material, dielectric constant 3000). The raw materials were premixed, melt extruded, cast into a film, cooled, slit, and wound in the same manner as in Example 1 to prepare the encapsulating film E-10.

[0056] Example 11

[0057] The difference from Example 2 is that barium titanate was modified by grafting with γ-methacryloxypropyltrimethoxysilane (Jianghan Fine Chemical Co., Ltd., Jingzhou, Hubei Province), with a grafting rate of 1.5%.

[0058] The mass fraction of modified barium titanate remains 1, and the types and mass fractions of other raw materials remain unchanged. The raw materials are premixed, melt extruded, cast into a film, cooled, slit and wound in the same manner as in Example 1 to prepare the encapsulating film E-11.

[0059] Example 12

[0060] The difference from Example 2 is that the ethylene-vinyl acetate copolymer was replaced with the same number of parts by mass of polyethylene (Dow). The raw materials were premixed, melt extruded, cast into a film, cooled, slit, and wound in the same manner as in Example 1 to prepare the encapsulating film E-12.

[0061] Example 13

[0062] The difference from Example 4 is that titanium dioxide (Cholmours, dielectric constant 170; particle size 10 μm) was replaced with the same amount of titanium dioxide (Cholmours, dielectric constant 50; particle size 0.01 μm) by mass. The raw materials were premixed, melt extruded, cast into a film, cooled, slit, and wound in the same manner as in Example 1 to prepare the encapsulating film E-13.

[0063] Comparative Example 1

[0064] A photovoltaic encapsulating film, by weight, comprises the following raw materials: 100 parts ethylene-vinyl acetate copolymer (Lianhong New Material Technology Co., Ltd., VA mass fraction 28%), 1 part triallyl isocyanurate (Hunan Minhe Chemical Co., Ltd.), 0.6 parts crosslinking agent 2-ethylhexyl carbonate tert-butyl peroxide (Arkema), 0.5 parts tackifier γ-methacryloyloxypropyltrimethoxysilane (Hubei Jingzhou Jianghan Fine Chemical Co., Ltd.), and 0.2 parts hindered amine light stabilizer bis-2,2,6,6-tetramethylpiperidinol sebate (Tianjin Lianlong Co., Ltd.). The photovoltaic encapsulating film C-1 is prepared by premixing, melt extrusion, casting, cooling, slitting, and winding of the above raw materials in the same manner as in Example 1.

[0065] Comparative Example 2

[0066] A photovoltaic encapsulating film, by weight, comprises the following main raw materials: 100 parts ethylene-vinyl acetate copolymer (Lianhong New Material Technology Co., Ltd., VA mass fraction 28%), 1 part polymethyl methacrylate (Aladdin reagent, dielectric constant 4.5), 1 part triallyl isocyanurate (Hunan Minhe Chemical Co., Ltd.), 0.6 parts crosslinking agent 2-ethylhexyl carbonate tert-butyl peroxide (Arkema), 0.5 parts tackifier γ-methacryloyloxypropyltrimethoxysilane (Hubei Jingzhou Jianghan Fine Chemical Co., Ltd.), and 0.2 parts hindered amine light stabilizer bis-2,2,6,6-tetramethylpiperidinol sebacate (Tianjin Lianlong Co., Ltd.). The photovoltaic encapsulating film C-2 is prepared by premixing, melt extrusion, casting, cooling, slitting, and winding of the above raw materials in the same manner as in Example 1.

[0067] Comparative Example 3

[0068] The difference from Example 1 is that barium titanate is replaced with the same mass of silicon dioxide (dielectric constant 3.9; particle size 5μm), and the raw materials are premixed, melt extruded, cast into film, cooled, slit and wound in the same manner as in Example 1 to prepare photovoltaic encapsulation film C-3.

[0069] Performance testing

[0070] Standard photovoltaic modules were fabricated by laminating the encapsulating films prepared in the examples and comparative examples with glass + encapsulating film + Tongwei TOPCon cell array + encapsulating film + glass structure, and ensuring that the crosslinking degree of the encapsulating film after lamination reached >75%.

[0071] Test method for degree of crosslinking: according to standard GB / T29848-2018.

[0072] The modules made using the encapsulating films of the above embodiments and comparative examples were tested according to IECTS 2804-1:2015. The test conditions were tightened to 85°C, 85%RH, and an external constant DC voltage of -1500V. After 192 hours, the power attenuation of the photovoltaic modules before and after the PID test was measured.

[0073] Table 1

[0074]

[0075]

[0076] As can be seen from the above description, the above embodiments of the present invention achieve the following technical effects: the addition of high dielectric material to the above encapsulation film composition, which is distributed in the matrix resin, can greatly enhance the capacitance effect of the encapsulation film. In the presence of a potential difference, it can store a certain amount of charge, thereby reducing charge migration to the surface of the solar cell and effectively suppressing the PID problem of photovoltaic modules.

[0077] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. An encapsulating film composition, characterized in that, It includes a matrix resin and a high-dielectric material, wherein the high-dielectric material comprises 0.01% to 5% of the mass of the matrix resin; The high dielectric material includes any one or more of organic polymer materials, carbon inorganic materials, and metallic inorganic materials; the dielectric constant of the organic polymer materials and the carbon inorganic materials is 10~3000; the dielectric constant of the metallic inorganic materials is ≥100. The inorganic metallic material is selected from any one or more of lead magnesium niobate-lead titanate, lead zirconate titanate lanthanum, lead zirconate titanate, barium titanate, strontium titanate, potassium sodium niobate, and sodium niobate. The carbon-inorganic materials include any one or more of carbon nanotubes, graphite, and carbon fibers; The organic polymer material is selected from any one or more of polyvinylidene chloride and polyvinyl alcohol resin; The matrix resin is a polyolefin resin.

2. The encapsulating film composition according to claim 1, characterized in that, The particle size D50 of the metallic inorganic material is 0.01~10μm.

3. The encapsulating film composition according to claim 1, characterized in that, The metallic inorganic materials and carbon inorganic materials are modified with organic matter.

4. The encapsulating film composition according to claim 3, characterized in that, The organic material includes any one or more of polyolefins, epoxy resins, and silane coupling agents.

5. The encapsulating film composition according to claim 1, characterized in that, The particle size D50 of the organic polymer material and the carbon inorganic material is 0.01~10μm.

6. The encapsulating film composition according to claim 1, characterized in that, The high dielectric material is 0.01 to 1% of the mass of the matrix resin.

7. The encapsulating film composition according to claim 1, characterized in that, The matrix resin is a vinyl resin.

8. The encapsulating film composition according to claim 7, characterized in that, The matrix resin includes any one or more of ethylene-vinyl acetate polymer and ethylene-α-olefin copolymer.

9. The encapsulating film composition according to any one of claims 1 to 5, characterized in that, The encapsulating film composition also includes additives.

10. The encapsulating film composition according to claim 9, characterized in that, The additives include any one or more of crosslinking agents, co-crosslinking agents, thickeners, and light stabilizers.

11. An encapsulating film, characterized in that, It is prepared from the encapsulating film composition according to any one of claims 1 to 10.

12. A photovoltaic module, characterized in that, Contains the encapsulating film as described in claim 11.

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