Semiconductor laser element having a fermi surface topological layer

Abstract

The application provides a semiconductor laser element with a Fermi surface topological layer, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer; a Fermi surface topological layer is arranged between the upper confinement layer and the electron blocking layer and / or between the lower confinement layer and the lower waveguide layer; and the Fermi surface topological layer is a two-dimensional topological Moire superlattice structure. The Fermi surface topological layer is arranged between the upper confinement layer and the electron blocking layer and / or between the lower confinement layer and the lower waveguide layer; the Fermi surface topological layer can change the Fermi surface topological structure by moving the energy band vertically downward, reduces the disorder and instability of electron spin, improves the injection efficiency of electrons and holes, and the radiation recombination efficiency of the active layer of the laser element; meanwhile, the bipolar conductance is enhanced to improve the confinement factor and solve the saturation problem of the carrier concentration of the active layer, so that the excitation threshold of the laser element is reduced, and the optical power and the slope efficiency of the laser element are improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor optoelectronic devices, and in particular to a semiconductor laser element with a Fermi surface topological layer. BACKGROUND

[0002] Lasers are widely used in laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are various. The main types of lasers include solid-state, gas, liquid, semiconductor and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long service life, simple and compact structure, and small size.

[0003] There are great differences between lasers and nitride semiconductor light-emitting diodes:

[0004] 1) Laser is generated by stimulated radiation of carriers, with small spectral half-width and high brightness. The output power of a single laser can reach W level, while the output power of a single nitride semiconductor light-emitting diode is in mW level.

[0005] 2) The current density of the laser reaches KA / cm 2 , which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency decay Droop effect;

[0006] 3) Light-emitting diode is spontaneously transitioned and radiated without external action, and the incoherent light is transitioned from high energy level to low energy level. Laser is stimulated transition radiation, and the energy of the induced photon should be equal to the energy level difference of the electron transition. The generated photon and the induced photon are homophase coherent light.

[0007] 4) Different principles: Light-emitting diode is under the action of external voltage, and electron-hole is transitioned to quantum well or p-n junction to produce radiation recombination. Laser needs to meet the lasing conditions, and must meet the carrier inversion distribution in the active region. The stimulated radiation light oscillates back and forth in the resonant cavity, propagates in the gain medium to amplify the light, meets the threshold condition to make the gain greater than the loss, and finally outputs laser.

[0008] The nitride semiconductor laser has the following problems:

[0009] 1) Large internal lattice mismatch and large strain cause strong polarization effect and strong QCSE quantum confinement Stark effect, which limit the improvement of the electrical lasing gain of the laser;

[0010] 2) The Mg acceptor of the p-type semiconductor has a large activation energy, a low ionization efficiency, a hole concentration far lower than the electron concentration, and a hole mobility far less than the electron mobility, and the electron and hole in the active layer are seriously asymmetric and mismatched, resulting in low hole injection efficiency and electron overflow, and reducing the electron and hole radiation recombination efficiency of the active layer;

[0011] 3) After the laser is emitted, the carrier concentration of the multi-quantum well active region is saturated, the bipolar conduction effect is weakened, and the series resistance of the laser increases, resulting in an increase in the voltage of the laser. SUMMARY

[0012] To solve one of the above technical problems, the application provides a semiconductor laser element with a Fermi surface topological layer.

[0013] The semiconductor laser element with a Fermi surface topological layer provided by the embodiment of the application comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer, a Fermi surface topological layer is arranged between the upper confinement layer and the electron blocking layer and / or between the lower confinement layer and the lower waveguide layer, and the Fermi surface topological layer is a two-dimensional topological moire superlattice structure.

[0014] Preferably, the Fermi surface topological layer is a two-dimensional topological moire superlattice structure of any one or any combination of Ba(FeCo)2As2@ReS2, LuFeO3@LuFe2O4, SrTiO3@FeSe, FeSe@STO, Cr2Ge2Te6@CoNiCo.

[0015] Preferably, the Fermi surface topological layer comprises a two-dimensional topological moire superlattice structure of any binary combination of:

[0016] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4,

[0017] Ba(FeCo)2As2@ReS2 / SrTiO3@FeSe,

[0018] Ba(FeCo)2As2@ReS2 / FeSe@STO,

[0019] Ba(FeCo)2As2@ReS2 / Cr2Ge2Te6@CoNiCo,

[0020] LuFeO3@LuFe2O4 / SrTiO3@FeSe,

[0021] LuFeO3@LuFe2O4 / FeSe@STO,

[0022] LuFeO3@LuFe2O4 / Cr2Ge2Te6@CoNiCo,

[0023] SrTiO3@FeSe / FeSe@STO,

[0024] SrTiO3@FeSe / Cr2Ge2Te6@CoNiCo,

[0025] FeSe@STO / Cr2Ge2Te6@CoNiCo.

[0026] Preferably, the Fermi surface topological layer comprises a two-dimensional topological moire superlattice structure of any of the following triads:

[0027] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / SrTiO3@FeSe,

[0028] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / FeSe@STO,

[0029] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / Cr2Ge2Te6@CoNiCo,

[0030] Ba(FeCo)2As2@ReS2 / SrTiO3@FeSe / FeSe@STO,

[0031] Ba(FeCo)2As2@ReS2 / SrTiO3@FeSe / Cr2Ge2Te6@CoNiCo,

[0032] Ba(FeCo)2As2@ReS2 / FeSe@STO / Cr2Ge2Te6@CoNiCo,

[0033] LuFeO3@LuFe2O4 / SrTiO3@FeSe / FeSe@STO,

[0034] LuFeO3@LuFe2O4 / SrTiO3@FeSe / Cr2Ge2Te6@CoNiCo,

[0035] LuFeO3@LuFe2O4 / FeSe@STO / Cr2Ge2Te6@CoNiCo,

[0036] SrTiO3@FeSe / FeSe@STO / Cr2Ge2Te6@CoNiCo.

[0037] Preferably, the Fermi surface topological layer comprises a two-dimensional topological moire superlattice structure of any of the following quadriads:

[0038] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / SrTiO3@FeSe / FeSe@STO,

[0039] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / SrTiO3@FeSe / Cr2Ge2Te6@CoNiCo,

[0040] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / FeSe@STO / Cr2Ge2Te6@CoNiCo,

[0041] Ba(FeCo)2As2@ReS2 / SrTiO3@FeSe / FeSe@STO / Cr2Ge2Te6@CoNiCo,

[0042] LuFeO3@LuFe2O4 / SrTiO3@FeSe / FeSe@STO / Cr2Ge2Te6@CoNiCo.

[0043] Preferably, the Fermi surface topological layer comprises a two-dimensional topological moiré superlattice structure of the following five-element combination:

[0044] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / SrTiO3@FeSe / FeSe@STO / Cr2Ge2Te6@CoNiCo.

[0045] Preferably, the thickness of the Fermi surface topological layer is 5 nm to 500 nm.

[0046] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3≥m≥1;

[0047] The well layer is any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, and has a thickness of 10 angstroms to 80 angstroms;

[0048] The barrier layer is any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, BN, with a thickness of 10 angstroms to 120 angstroms.

[0049] Preferably, the lower confinement layer is any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, BN, with a thickness of 50 nm to 5000 nm, and a Si doping concentration of 1E18 cm -3 to 1E20 cm -3 ;

[0050] The lower waveguide layer and the upper waveguide layer are any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, BN, with a thickness of 50 nm to 1000 nm, and a Si doping concentration of 1E16 cm -3 to 5E19 cm -3 .

[0051] Preferably, the electron blocking layer and the upper confinement layer are any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, BN, with a thickness of 20 nm to 1000 nm, and a Mg doping concentration of 1E18 cm -3 to 1E20 cm -3 ;

[0052] The substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, a sapphire / SiO2 composite substrate, a sapphire / AlN composite substrate, a sapphire / SiNx composite substrate, a sapphire / SiO2 / SiNx composite substrate, a magnesium-aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0053] The beneficial effects of the present application are as follows: the present application sets a Fermi surface topological layer between the upper confinement layer and the electron blocking layer and / or between the lower confinement layer and the lower waveguide layer, the Fermi surface topological layer can change the Fermi surface topological structure by vertical downward energy band movement, reduce the disorder and instability of electron spin, improve the injection efficiency of electrons and holes, and the radiation recombination efficiency of the active layer of the laser element, at the same time, enhance the bipolar conductance to improve the confinement factor and solve the saturation problem of the carrier concentration of the active layer, thereby reducing the excitation threshold of the laser element and improving the optical power and slope efficiency of the laser element. BRIEF DESCRIPTION OF DRAWINGS

[0054] The drawings described herein are used to provide further understanding of the present application, and form a part of the present application. The illustrative embodiments of the present application and their descriptions serve to explain the present application, and do not constitute an improper limitation on the present application. In the drawings:

[0055] Figure 1 Structure diagram of the semiconductor laser element with the Fermi surface topological layer according to the embodiment 1 of the present application;

[0056] Figure 2 Structure diagram of the semiconductor laser element with the Fermi surface topological layer according to the embodiment 2 of the present application;

[0057] Figure 3 Structure diagram of the semiconductor laser element with the Fermi surface topological layer according to the embodiment 3 of the present application.

[0058] Reference signs:

[0059] 100, substrate, 101, lower confinement layer, 102, lower waveguide layer, 103, active layer, 104, upper waveguide layer, 105, electron blocking layer, 106, upper confinement layer, 107, Fermi surface topological layer. DETAILED DESCRIPTION

[0060] In order to make the technical solutions and advantages in the embodiments of the present application more clear and explicit, the exemplary embodiments of the present application are further described in detail below with reference to the drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0061] Example 1

[0062] like Figure 1 As shown, this embodiment proposes a semiconductor laser element with a Fermi surface topological layer, including a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105 and an upper confinement layer 106 arranged in sequence from bottom to top, wherein a Fermi surface topological layer 107 is arranged between the upper confinement layer 106 and the electron blocking layer 105.

[0063] Specifically, in this embodiment, the Fermi surface topological layer 107 is disposed between the upper confinement layer 106 and the electron blocking layer 105. The thickness of the Fermi surface topological layer 107 is 5 nm to 500 nm. The Fermi surface topological layer 107 is a two-dimensional topological moiré superlattice structure, and can be any one or any combination of Ba(FeCo)2As2@ReS2, LuFeO3@LuFe2O4, SrTiO3@FeSe, FeSe@STO, and Cr2Ge2Te6@CoNiCo.

[0064] More specifically, based on the above-mentioned two-dimensional topological moiré superlattice structure, the Fermi surface topological layer 107 in this embodiment can further be a two-dimensional topological moiré superlattice structure of a binary combination, a ternary combination, a quaternary combination or a quinary combination.

[0065] The Fermi surface topological layer 107 may be a two-dimensional topological moiré superlattice structure of any of the following binary combinations:

[0066] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4,

[0067] Ba(FeCo)2As2@ReS2 / SrTiO3@FeSe,

[0068] Ba(FeCo)2As2@ReS2 / FeSe@STO,

[0069] Ba(FeCo)2As2@ReS2 / Cr2Ge2Te6@CoNiCo,

[0070] LuFeO3@LuFe2O4 / SrTiO3@FeSe,

[0071] LuFeO3@LuFe2O4 / FeSe@STO,

[0072] LuFeO3@LuFe2O4 / Cr2Ge2Te6@CoNiCo,

[0073] SrTiO3@FeSe / FeSe@STO,

[0074] SrTiO3@FeSe / Cr2Ge2Te6@CoNiCo,

[0075] FeSe@STO / Cr2Ge2Te6@CoNiCo.

[0076] The Fermi surface topological layer 107 can also be a two-dimensional topological moire superlattice structure of any of the following ternary combinations:

[0077] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / SrTiO3@FeSe,

[0078] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / FeSe@STO,

[0079] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / Cr2Ge2Te6@CoNiCo,

[0080] Ba(FeCo)2As2@ReS2 / SrTiO3@FeSe / FeSe@STO,

[0081] Ba(FeCo)2As2@ReS2 / SrTiO3@FeSe / Cr2Ge2Te6@CoNiCo,

[0082] Ba(FeCo)2As2@ReS2 / FeSe@STO / Cr2Ge2Te6@CoNiCo,

[0083] LuFeO3@LuFe2O4 / SrTiO3@FeSe / FeSe@STO,

[0084] LuFeO3@LuFe2O4 / SrTiO3@FeSe / Cr2Ge2Te6@CoNiCo,

[0085] LuFeO3@LuFe2O4 / FeSe@STO / Cr2Ge2Te6@CoNiCo,

[0086] SrTiO3@FeSe / FeSe@STO / Cr2Ge2Te6@CoNiCo.

[0087] The Fermi surface topological layer 107 can also be a two-dimensional topological moire superlattice structure of any of the following ternary combinations:

[0088] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / SrTiO3@FeSe / FeSe@STO,

[0089] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / SrTiO3@FeSe / Cr2Ge2Te6@CoNiCo,

[0090] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / FeSe@STO / Cr2Ge2Te6@CoNiCo,

[0091] Ba(FeCo)2As2@ReS2 / SrTiO3@FeSe / FeSe@STO / Cr2Ge2Te6@CoNiCo,

[0092] LuFeO3@LuFe2O4 / SrTiO3@FeSe / FeSe@STO / Cr2Ge2Te6@CoNiCo.

[0093] The Fermi surface topological layer 107 can also be a two-dimensional topological moiré superlattice structure of any of the following five combinations:

[0094] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / SrTiO3@FeSe / FeSe@STO / Cr2Ge2Te6@CoNiCo.

[0095] The Fermi surface topological layer 107 can change the Fermi surface topological structure by moving the energy band vertically downward, reduce the disorder and instability of electron spin, improve the injection efficiency of electrons and holes, and the radiation recombination efficiency of the active layer 103 of the laser element, at the same time, enhance the bipolar conductance to improve the confinement factor and solve the problem of saturation of carrier concentration of the active layer 103, thereby reducing the excitation threshold of the laser element and improving the optical power and slope efficiency of the laser element.

[0096] Further, the active layer 103 is a periodic structure composed of well layers and barrier layers, and the number of periods is 3≥m≥1;

[0097] The well layer is any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, BN, and the thickness is 10 angstroms to 80 angstroms;

[0098] The lower cladding layer is any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, BN, and has a thickness of 10 angstroms to 120 angstroms.

[0099] The lower confinement layer 101 is any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, BN, and has a thickness of 50 nm to 5000 nm and a Si doping concentration of 1E18 cm -3 to 1E20 cm -3 ;

[0100] The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, BN, and have a thickness of 50 nm to 1000 nm and a Si doping concentration of 1E16 cm -3 to 5E19 cm -3 .

[0101] The electron blocking layer 105 and the upper cladding layer 106 are any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, BN, and have a thickness of 20 nm to 1000 nm and a Mg doping concentration of 1E18 cm -3 to 1E20 cm -3 ;

[0102] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0103] Example 2

[0104] like Figure 2 As shown, this embodiment proposes a semiconductor laser element with a Fermi surface topological layer, including a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105 and an upper confinement layer 106 arranged in sequence from bottom to top, wherein a Fermi surface topological layer 107 is arranged between the lower confinement layer 101 and the lower waveguide layer 102.

[0105] Specifically, in this embodiment, the Fermi surface topological layer 107 is disposed between the lower confinement layer 101 and the lower waveguide layer 102. The thickness of the Fermi surface topological layer 107 is 5 nm to 500 nm. The Fermi surface topological layer 107 is a two-dimensional topological moiré superlattice structure, and can be any one or any combination of Ba(FeCo)2As2@ReS2, LuFeO3@LuFe2O4, SrTiO3@FeSe, FeSe@STO, and Cr2Ge2Te6@CoNiCo.

[0106] More specifically, based on the above-mentioned two-dimensional topological moiré superlattice structure, the Fermi surface topological layer 107 in this embodiment can further be a two-dimensional topological moiré superlattice structure of a binary combination, a ternary combination, a quaternary combination or a quinary combination.

[0107] The Fermi surface topological layer 107 may be a two-dimensional topological moiré superlattice structure of any of the following binary combinations:

[0108] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4,

[0109] Ba(FeCo)2As2@ReS2 / SrTiO3@FeSe,

[0110] Ba(FeCo)2As2@ReS2 / FeSe@STO,

[0111] Ba(FeCo)2As2@ReS2 / Cr2Ge2Te6@CoNiCo,

[0112] LuFeO3@LuFe2O4 / SrTiO3@FeSe,

[0113] LuFeO3@LuFe2O4 / FeSe@STO,

[0114] LuFeO3@LuFe2O4 / Cr2Ge2Te6@CoNiCo,

[0115] SrTiO3@FeSe / FeSe@STO,

[0116] SrTiO3@FeSe / Cr2Ge2Te6@CoNiCo,

[0117] FeSe@STO / Cr2Ge2Te6@CoNiCo.

[0118] The Fermi surface topological layer 107 can also be a two-dimensional topological moire superlattice structure of any of the following ternary combinations:

[0119] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / SrTiO3@FeSe,

[0120] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / FeSe@STO,

[0121] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / Cr2Ge2Te6@CoNiCo,

[0122] Ba(FeCo)2As2@ReS2 / SrTiO3@FeSe / FeSe@STO,

[0123] Ba(FeCo)2As2@ReS2 / SrTiO3@FeSe / Cr2Ge2Te6@CoNiCo,

[0124] Ba(FeCo)2As2@ReS2 / FeSe@STO / Cr2Ge2Te6@CoNiCo,

[0125] LuFeO3@LuFe2O4 / SrTiO3@FeSe / FeSe@STO,

[0126] LuFeO3@LuFe2O4 / SrTiO3@FeSe / Cr2Ge2Te6@CoNiCo,

[0127] LuFeO3@LuFe2O4 / FeSe@STO / Cr2Ge2Te6@CoNiCo,

[0128] SrTiO3@FeSe / FeSe@STO / Cr2Ge2Te6@CoNiCo.

[0129] The Fermi surface topological layer 107 can also be a two-dimensional topological moiré superlattice structure of any of the following four combinations:

[0130] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / SrTiO3@FeSe / FeSe@STO,

[0131] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / SrTiO3@FeSe / Cr2Ge2Te6@CoNiCo,

[0132] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / FeSe@STO / Cr2Ge2Te6@CoNiCo,

[0133] Ba(FeCo)2As2@ReS2 / SrTiO3@FeSe / FeSe@STO / Cr2Ge2Te6@CoNiCo,

[0134] LuFeO3@LuFe2O4 / SrTiO3@FeSe / FeSe@STO / Cr2Ge2Te6@CoNiCo.

[0135] The Fermi surface topological layer 107 can also be a two-dimensional topological moiré superlattice structure of any of the following five combinations:

[0136] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / SrTiO3@FeSe / FeSe@STO / Cr2Ge2Te6@CoNiCo.

[0137] The Fermi surface topological layer 107 can change the Fermi surface topological structure by moving the energy band vertically downward, reduce the disorder and instability of electron spin, improve the injection efficiency of electrons and holes, and the radiation recombination efficiency of the active layer 103 of the laser element, at the same time, enhance the bipolar conductance to improve the confinement factor and solve the problem of carrier concentration saturation of the active layer 103, thereby reducing the excitation threshold of the laser element and improving the optical power and slope efficiency of the laser element.

[0138] Further, the active layer 103 is a periodic structure composed of well layers and barrier layers, and the number of periods is 3≥m≥1;

[0139] The well layer is any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, BN, and has a thickness of 10 angstroms to 80 angstroms;

[0140] The barrier layer is any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, BN, and has a thickness of 10 angstroms to 120 angstroms.

[0141] The lower confinement layer 101 is any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, BN, and has a thickness of 50 nm to 5000 nm and a Si doping concentration of 1E18 cm -3 to 1E20 cm -3 ;

[0142] The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, BN, and have a thickness of 50 nm to 1000 nm and a Si doping concentration of 1E16 cm -3 to 5E19 cm -3 .

[0143] The electron blocking layer 105 and the upper confinement layer 106 are any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, BN, and have a thickness of 20 nm to 1000 nm and a Mg doping concentration of 1E18 cm -3up to 1E20 cm -3 ;

[0144] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, a sapphire / SiO2 composite substrate, a sapphire / AlN composite substrate, a sapphire / SiNx, a sapphire / SiO2 / SiNx composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0145] Embodiment 3

[0146] As Figure 3 shown, the embodiment proposes a semiconductor laser element with a Fermi surface topological layer, including a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 arranged in order from bottom to top, wherein a Fermi surface topological layer 107 is arranged between the upper confinement layer 106 and the electron blocking layer 105, and between the lower confinement layer 101 and the lower waveguide layer 102.

[0147] Specifically, in the embodiment, the Fermi surface topological layer 107 is arranged between the upper confinement layer 106 and the electron blocking layer 105, and between the lower confinement layer 101 and the lower waveguide layer 102. The thickness of the Fermi surface topological layer 107 is 5 nm to 500 nm. The Fermi surface topological layer 107 is a two-dimensional topological moiré superlattice structure, which can be any one or any combination of Ba(FeCo)2As2@ReS2, LuFeO3@LuFe2O4, SrTiO3@FeSe, FeSe@STO, Cr2Ge2Te6@CoNiCo.

[0148] More specifically, on the basis of the two-dimensional topological moiré superlattice structure proposed above, the Fermi surface topological layer 107 in the embodiment can further be a two-dimensional topological moiré superlattice structure of binary combination, ternary combination, quaternary combination, or quinary combination.

[0149] The Fermi surface topological layer 107 can be any two-dimensional topological moiré superlattice structure of the following binary combinations:

[0150] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4,

[0151] Ba(FeCo)2As2@ReS2 / SrTiO3@FeSe,

[0152] Ba(FeCo)2As2@ReS2 / FeSe@STO,

[0153] Ba(FeCo)2As2@ReS2 / Cr2Ge2Te6@CoNiCo,

[0154] LuFeO3@LuFe2O4 / SrTiO3@FeSe,

[0155] LuFeO3@LuFe2O4 / FeSe@STO,

[0156] LuFeO3@LuFe2O4 / Cr2Ge2Te6@CoNiCo,

[0157] SrTiO3@FeSe / FeSe@STO,

[0158] SrTiO3@FeSe / Cr2Ge2Te6@CoNiCo,

[0159] FeSe@STO / Cr2Ge2Te6@CoNiCo.

[0160] The Fermi surface topological layer 107 can also be a two-dimensional topological moire superlattice structure of any of the following ternary combinations:

[0161] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / SrTiO3@FeSe,

[0162] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / FeSe@STO,

[0163] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / Cr2Ge2Te6@CoNiCo,

[0164] Ba(FeCo)2As2@ReS2 / SrTiO3@FeSe / FeSe@STO,

[0165] Ba(FeCo)2As2@ReS2 / SrTiO3@FeSe / Cr2Ge2Te6@CoNiCo,

[0166] Ba(FeCo)2As2@ReS2 / FeSe@STO / Cr2Ge2Te6@CoNiCo,

[0167] LuFeO3@LuFe2O4 / SrTiO3@FeSe / FeSe@STO,

[0168] LuFeO3@LuFe2O4 / SrTiO3@FeSe / Cr2Ge2Te6@CoNiCo,

[0169] LuFeO3@LuFe2O4 / FeSe@STO / Cr2Ge2Te6@CoNiCo,

[0170] SrTiO3@FeSe / FeSe@STO / Cr2Ge2Te6@CoNiCo.

[0171] The Fermi surface topological layer 107 can also be a two-dimensional topological moiré superlattice structure of any four-element combination of the following:

[0172] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / SrTiO3@FeSe / FeSe@STO,

[0173] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / SrTiO3@FeSe / Cr2Ge2Te6@CoNiCo,

[0174] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / FeSe@STO / Cr2Ge2Te6@CoNiCo,

[0175] Ba(FeCo)2As2@ReS2 / SrTiO3@FeSe / FeSe@STO / Cr2Ge2Te6@CoNiCo,

[0176] LuFeO3@LuFe2O4 / SrTiO3@FeSe / FeSe@STO / Cr2Ge2Te6@CoNiCo.

[0177] The Fermi surface topological layer 107 can also be a two-dimensional topological moiré superlattice structure of any five-element combination of the following:

[0178] Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / SrTiO3@FeSe / FeSe@STO / Cr2Ge2Te6@CoNiCo.

[0179] The Fermi surface topological layer 107 can change the Fermi surface topological structure by moving the energy band vertically downward, reduce the disorder and instability of electron spin, improve the injection efficiency of electrons and holes, and the radiation recombination efficiency of the active layer 103 of the laser element, at the same time, enhance the bipolar conductance to improve the confinement factor, and solve the problem of carrier concentration saturation of the active layer 103, thereby reducing the excitation threshold of the laser element, and improving the optical power and slope efficiency of the laser element.

[0180] Further, the active layer 103 is a periodic structure composed of well layers and barrier layers, and the number of periods is 3≥m≥1;

[0181] The well layer is any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, BN, and has a thickness of 10 angstroms to 80 angstroms;

[0182] The barrier layer is any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, BN, and has a thickness of 10 angstroms to 120 angstroms.

[0183] The lower confinement layer 101 is any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, BN, and has a thickness of 50 nm to 5000 nm and a Si doping concentration of 1E18 cm -3 to 1E20 cm -3 ;

[0184] The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, BN, and have a thickness of 50 nm to 1000 nm and a Si doping concentration of 1E16 cm -3 to 5E19 cm -3 .

[0185] The electron blocking layer 105 and the upper confinement layer 106 are any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, BN, and have a thickness of 20 nm to 1000 nm and a Mg doping concentration of 1E18 cm -3Up to 1E20 cm -3 ;

[0186] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, a sapphire / SiO2 composite substrate, a sapphire / AlN composite substrate, a sapphire / SiNx, a sapphire / SiO2 / SiNx composite substrate, a magnesium-aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0187] The following table shows the performance parameter comparison between the semiconductor laser element with Fermi surface topological layer according to the embodiments of the present application and the conventional semiconductor laser element, and it can be seen that the semiconductor laser element with Fermi surface topological layer according to the embodiments of the present application has more stable and efficient working performance.

[0188]

[0189] Obviously, various modifications and changes can be made to the present application by those skilled in the art without departing from the spirit and scope of the application. Accordingly, it is intended that all such modifications and changes be included within the scope of the application as defined in the following claims and their equivalents.

Claims

1. A semiconductor laser element having a Fermi surface topological layer, characterized by comprising: The semiconductor structure comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer, wherein a Fermi surface topological layer is arranged between the upper confinement layer and the electron blocking layer and / or between the lower confinement layer and the lower waveguide layer, and the Fermi surface topological layer is a two-dimensional topological moire superlattice structure.

2. The semiconductor laser device according to claim 1, characterized by The Fermi surface topological layer is a two-dimensional topological moire superlattice structure of any one or any combination of Ba(FeCo)2As2@ReS2, LuFeO3@LuFe2O4, SrTiO3@FeSe, FeSe@STO, and Cr2Ge2Te6@CoNiCo.

3. The semiconductor laser device according to claim 1 or 2, characterized by The Fermi surface topological layer comprises a two-dimensional topological moire superlattice structure of any binary combination of: Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4, Ba(FeCo)2As2@ReS2 / SrTiO3@FeSe, Ba(FeCo)2As2@ReS2 / FeSe@STO, Ba(FeCo)2As2@ReS2 / Cr2Ge2Te6@CoNiCo, LuFeO3@LuFe2O4 / SrTiO3@FeSe, LuFeO3@LuFe2O4 / FeSe@STO, LuFeO3@LuFe2O4 / Cr2Ge2Te6@CoNiCo, SrTiO3@FeSe / FeSe@STO, SrTiO3@FeSe / Cr2Ge2Te6@CoNiCo, FeSe@STO / Cr2Ge2Te6@CoNiCo.

4. The semiconductor laser device according to claim 1 or 2, characterized by The Fermi surface topological layer comprises a two-dimensional topological moire superlattice structure of any ternary combination of: Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / SrTiO3@FeSe, Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / FeSe@STO, Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / Cr2Ge2Te6@CoNiCo, Ba(FeCo)2As2@ReS2 / SrTiO3@FeSe / FeSe@STO, Ba(FeCo)2As2@ReS2 / SrTiO3@FeSe / Cr2Ge2Te6@CoNiCo, Ba(FeCo)2As2@ReS2 / FeSe@STO / Cr2Ge2Te6@CoNiCo, LuFeO3@LuFe2O4 / SrTiO3@FeSe / FeSe@STO, LuFeO3@LuFe2O4 / SrTiO3@FeSe / Cr2Ge2Te6@CoNiCo, LuFeO3@LuFe2O4 / FeSe@STO / Cr2Ge2Te6@CoNiCo, SrTiO3@FeSe / FeSe@STO / Cr2Ge2Te6@CoNiCo.

5. The semiconductor laser device according to claim 1 or 2, wherein The Fermi surface topological layer comprises a two-dimensional topological moire superlattice structure of any four combinations of the following: Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / SrTiO3@FeSe / FeSe@STO, Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / SrTiO3@FeSe / Cr2Ge2Te6@CoNiCo, Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / FeSe@STO / Cr2Ge2Te6@CoNiCo, Ba(FeCo)2As2@ReS2 / SrTiO3@FeSe / FeSe@STO / Cr2Ge2Te6@CoNiCo, LuFeO3@LuFe2O4 / SrTiO3@FeSe / FeSe@STO / Cr2Ge2Te6@CoNiCo.

6. The semiconductor laser device according to claim 1 or 2, wherein The Fermi surface topological layer comprises a two-dimensional topological moire superlattice structure of any five combinations of the following: Ba(FeCo)2As2@ReS2 / LuFeO3@LuFe2O4 / SrTiO3@FeSe / FeSe@STO / Cr2Ge2Te6@CoNiCo.

7. The semiconductor laser device according to claim 1, wherein The thickness of the Fermi surface topological layer is 5nm to 500nm.

8. The semiconductor laser device according to claim 1, wherein The active layer is a periodic structure composed of well layers and barrier layers, and the number of periods is 3≥m≥1. The well layer is any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, BN, with a thickness of 10 angstroms to 80 angstroms. The barrier layer is any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, BN, with a thickness of 10 angstroms to 120 angstroms.

9. The semiconductor laser device according to claim 1, wherein The lower confinement layer is any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, BN, with a thickness of 50 nm to 5000 nm, and a Si doping concentration of 1E18 cm -3 to 1E20 cm -3 ; The lower waveguide layer and the upper waveguide layer are any one or any combination of InGaN, InN, GaN, AlInGaN, AIN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga203, BN, with a thickness of 50 nm to 1000 nm, and a Si doping concentration of 1E16 cm -3 to 5E19 cm -3 .

10. The semiconductor laser device according to claim 1, wherein The electron blocking layer and the upper confining layer are any one or any combination of InGaN, InN, GaN, AlInGaN, AlN, AlGaN, AlInN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, BN, with a thickness of 20 nm to 1000 nm and a Mg doping concentration of 1E18 cm -3 to 1E20 cm -3 ; The substrate comprises any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

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