High temperature endoscope for preventing deposition of impurities in an ingot growth apparatus

Abstract

Disclosed is a high-temperature endoscope for an ingot growth apparatus, having a structure for increasing the flow rate of inert gas for preventing deposition of impurities, thereby preventing deposition of impurities. The high-temperature endoscope for an ingot growth apparatus according to an embodiment of the present invention can include a frame extending to the inside of a chamber of an ingot growth apparatus, and having an exhaust port discharging inert gas at an end portion; a lens disposed at the center of the end portion of the frame, and being protected by the inert gas discharged from the exhaust port; and a guide tube disposed outside the frame, and forming a guide portion extending from the end portion of the frame to guide the inert gas, thereby increasing the flow rate and preventing deposition of impurities on the lens.

Description

Technical Field

[0001] The present invention relates to a high-temperature endoscope for an ingot growth apparatus, and more specifically, to a high-temperature endoscope for an ingot growth apparatus having a structure that increases the flow rate of an inert gas used to prevent impurity deposition, thereby preventing impurity deposition. Background Technology

[0002] Typically, in growth furnaces using the Chuklaski process, visual cameras such as CCDs and diameter measurement sensors (such as laser sensors) are used to measure the diameter of the ingot and the height of the molten silicon inside the crucible. This measurement is achieved through observation ports located at the top or side of the chamber.

[0003] Existing ingot growth apparatuses typically employ a method in single crystal growth where a commercial camera is placed outside the port to measure the diameter of the crystals inside the equipment. However, to ensure a clear view, it's crucial to ensure that the view from the monitoring port to the crystal growth area within the apparatus is unaffected by internal structures. This results in significant heat loss and imposes constraints on the structural design to conform to the viewing path.

[0004] To prevent heat loss in existing ingot growth apparatuses, an endoscopic monitoring system suitable for high-temperature operation is employed. This system ensures minimal space within the crystal growth region and allows for the reinforcement of a significantly larger amount of insulation material compared to existing methods. Consequently, it enhances insulation performance and reduces power consumption.

[0005] In the case of existing high-temperature endoscopes in ingot growth apparatuses, which are commercially available cameras commonly used in single crystal growth, if they are located outside the equipment, impurities generated inside the apparatus will not directly affect the camera lens. However, in the case of existing high-temperature endoscopes 10 located inside the growth furnace, the endoscope device is easily exposed to lens contamination caused by impurities during prolonged use. To solve this problem, a separate exhaust port 11a is provided in the frame 11 to supply inert gas to the front of the endoscope on the surface of the lens 12 of the high-temperature endoscope 10. However, this structure is not suitable for the process that generates excessive contaminants. (Refer to...) Figure 1 and Figure 2 The front exhaust port 11a does not enhance the gas flow rate. Instead, it simply supplies gas from the end of the frame 11 toward the lens 12. Therefore, there is a problem that impurities are deposited and accumulated on the lens 12 over time, which contaminates the lens 12. Summary of the Invention

[0006] (The problem to be solved)

[0007] According to the present invention, a high-temperature endoscope for preventing impurity deposition in an ingot growth apparatus is provided, wherein a guide is provided to increase the flow rate of an inert gas that is sprayed from the end of the endoscope to prevent impurity deposition on the lens, thereby preventing impurity deposition.

[0008] (Solutions)

[0009] According to one aspect of the invention, a high-temperature endoscope for preventing impurity deposition in a spindle growth apparatus may include: a frame extending into the chamber of the spindle growth apparatus and having an exhaust port at its end for discharging inert gas; a lens disposed at the center of the end of the frame and protected by the inert gas discharged from the exhaust port; and a guide tube disposed outside the frame and forming a guide portion extending from the end of the frame to guide the inert gas, thereby increasing the flow rate and preventing impurities from being deposited on the lens.

[0010] At this time, at least one exhaust port is provided on one side of the end of the frame, so that the direction of the discharged gas is toward the center of the lens.

[0011] At this time, heat insulation material is provided in the guide tube for heat insulation of the frame, thereby preventing the deposition of impurities in the ingot growth device.

[0012] At this time, the guide tube is inserted outside the frame and has multiple component holes formed at the upper end, so that it can be assembled and disassembled from the frame through multiple components.

[0013] At this time, a reduced inner diameter section is formed at the end of the guide tube, thereby preventing the deposition of impurities in the ingot growth device.

[0014] At this time, the reduced diameter section of the guide tube can linearly decrease in inner diameter towards the end side.

[0015] At this time, the guide tube can be formed into an elongated hole shape at its end on a plane.

[0016] At this time, a biased protrusion can be formed at the end of the guide tube, and the biased protrusion protrudes inward on one side.

[0017] At this time, the deflected protrusion of the guide tube is located in front of the exhaust port, so that the discharged inert gas can form a vortex by colliding with the partition wall on the opposite side.

[0018] (The effect of the invention)

[0019] According to the above structure, the high-temperature endoscope of the spindle growth apparatus of the present invention for preventing impurity deposition is provided by increasing the flow rate of inert gas through a guide tube, thereby preventing impurities from being deposited on the lens.

[0020] In addition, the high-temperature endoscope of the ingot growth apparatus of the present invention, which prevents impurity deposition, is provided with heat insulation material in the guide tube, thereby compensating for the heat loss caused by the high-temperature endoscope. Attached Figure Description

[0021] Figure 1 This is a structural diagram of the end of a high-temperature endoscope in a conventional ingot growth apparatus.

[0022] Figure 2 yes Figure 1 A plan view of the tip of a high-temperature endoscope.

[0023] Figure 3 This is a cross-sectional structural diagram of the ingot growth apparatus for installing the high-temperature endoscope of the present invention to prevent impurity deposition.

[0024] Figure 4 This is a cross-sectional view of the end of a high-temperature endoscope used to prevent impurity deposition in the ingot growth apparatus of the first embodiment of the present invention.

[0025] Figure 5 This is a cross-sectional view of the end of a high-temperature endoscope used to prevent impurity deposition in the ingot growth apparatus of the second embodiment of the present invention.

[0026] Figure 6 These are cross-sectional and plan views of a high-temperature endoscope for preventing impurity deposition in an ingot growth apparatus according to a third embodiment of the present invention.

[0027] Figure 7 This is a cross-sectional view and a plan view of a high-temperature endoscope for preventing impurity deposition in an ingot growth apparatus according to the fourth embodiment of the present invention.

[0028] Figure 8 This is a cross-sectional view and a plan view of a high-temperature endoscope for preventing impurity deposition in an ingot growth apparatus according to the fifth embodiment of the present invention.

[0029] Figure 9 This is a cross-sectional view and a plan view of a high-temperature endoscope for preventing impurity deposition in an ingot growth apparatus according to the sixth embodiment of the present invention. Detailed Implementation

[0030] The words and terms used in this specification and claims are not limited to their common understanding or dictionary meaning, but should be interpreted as meanings and concepts consistent with the technical ideas of this invention, in accordance with the principle that inventors may define terms and concepts in order to best illustrate their invention.

[0031] Therefore, the structures shown in the embodiments and drawings described in this specification are preferred embodiments of the present invention and do not represent all the technical ideas of the present invention. Thus, at the time of application of the present invention, the structures described may have various equivalents and modifications that can be replaced.

[0032] In this specification, terms such as "including" or "having" should be understood as merely indicating the presence of features, figures, steps, actions, components, parts, or combinations thereof described in the specification, and do not preclude the existence or additional possibilities of one or more other features, figures, steps, actions, components, parts, or combinations thereof.

[0033] The description of a component being located "in front of," "behind," "above," or "below" another component, unless otherwise specified, includes not only cases where it is in direct contact with other components but also cases where other components are placed in between. Furthermore, the description of a component being "connected" to another component, unless otherwise specified, includes not only direct connections but also indirect connections.

[0034] Hereinafter, with reference to the accompanying drawings, the high-temperature endoscope 60 of the ingot growth apparatus 20 of the present invention for preventing impurity deposition will be described.

[0035] refer to Figure 3 The diagram shows a cross-sectional structure of an ingot growth apparatus 20 on which the high-temperature endoscope 60 of the present invention is mounted. A growth furnace 50 is disposed inside a vacuum chamber 30, where single crystal growth is performed. A heater is disposed adjacent to the growth furnace 30, and upper heat insulation material 41, lower heat insulation material 42, and side heat insulation material 43 are provided to minimize heat loss. Heat loss directly affects the unit price of the product and is therefore a very important factor. Therefore, minimizing heat loss is crucial.

[0036] At this time, a high-temperature endoscope 60 is installed on the side of the vacuum chamber 30 of the ingot growth device 20, which penetrates the vacuum chamber 30 and the side heat insulation material 43, so that the ingot growth inside can be observed.

[0037] At this time, the high-temperature endoscope 60 has a structure in which a lens 62 is provided at the end of the tube-shaped extension member, namely the frame 61.

[0038] refer to Figure 3 and Figure 4 The high-temperature endoscope 60 of the spindle growth apparatus of the first embodiment of the present invention for preventing impurity deposition may include: a frame 61, a lens 62 and a guide tube 63.

[0039] refer to Figure 3 and Figure 4 The frame 61 extends into the chamber 30 of the ingot growth apparatus 20 and may have an exhaust port 61a at the end for discharging inert gas.

[0040] At this point, the frame 61 penetrates the vacuum chamber 30 and also the side insulation material 43, extending to the vicinity of the growth furnace 50. The frame 61 can be arranged adjacent to the growth furnace 50, thereby allowing for visual monitoring of the diameter and state of the single crystal ingot being grown inside the growth furnace 50.

[0041] At this time, the frame 61 is set through the vacuum chamber 30 and the side heat insulation material 43, so no matter how small the space and area it occupies, it is difficult to prevent heat loss.

[0042] At this time, electronic components such as an image sensor can be installed behind the frame 61 so that an image can be acquired through the lens 62.

[0043] In order to keep the temperature below a predetermined temperature inside the high-temperature chamber 30, a cooling jacket is formed in the frame 61 and a cooling device can be connected to it.

[0044] At this time, a gas channel is formed in the frame 61, extending to the end, through which argon gas, as an inert gas, can be supplied at a predetermined pressure via an exhaust port 61a formed at the end. Because of this supply of inert gas, the deposition of impurities on the lens 62 is minimized.

[0045] At this time, the frame 61, as an extension component, can be formed into a tube shape, and the image through the lens 62 can be provided to the rear image sensor through the central hole of the frame 61.

[0046] refer to Figure 3 and Figure 4 The lens 62 is located at the center of the end of the frame 61 and is protected by inert gas discharged from the exhaust port 61a. Typically, the ingot growth apparatus 20 uses a quartz material growth furnace 50 in its process structure, thus generating SiOx impurities internally during operation.

[0047] If inert gas is not used to prevent impurities from depositing on the lens 62, impurities will be deposited on the lens 62 in a short period of time, requiring repeated cleaning or replacement of the lens 62.

[0048] At this time, at least one exhaust port 61a is provided on one side of the end of the frame 61, and the direction of the discharged gas is directed toward the center of the lens 62. Here, an exhaust port 61a is formed, configured to allow the inert gas discharged into the exhaust port 61a to be discharged to the opposite side in the direction of the center of the lens 62. Of course, this gas flow occurs simultaneously with the start of ingot growth and continues until the end of the process.

[0049] If ingot growth is carried out under these conditions, impurities will be generated in the growth furnace 50. These impurities will flow into the chamber 30 with the fluid flow and will also come into contact with the lens 62. At this time, due to temperature and material, some of the impurities will deposit on the lens 62, thus making it impossible to obtain a clear image. However, before the impurities come into contact with the lens 62, most of the impurities will be moved away from the lens 62 by the flow of inert gas, preventing impurity deposition.

[0050] At this point, some impurities are difficult to completely remove using the flow of inert gas, and it is also difficult for fast-moving or heavier impurities to be completely removed from the lens 62 by the flow rate of inert gas. Therefore, a high-velocity and large-volume flow of inert gas can remove various impurities, ensuring that they hardly contact the lens 62. However, excessively high pressure or a large supply of inert gas can cause heat loss problems, so a structure is needed to maintain the inert gas supply and pressure while preventing impurity deposition. This structure is achieved through the guide tube 63.

[0051] refer to Figure 3 and Figure 4 The guide tube 63 is disposed outside the frame 61 and forms a guide portion extending from the end of the frame 61 to guide the inert gas, thereby increasing the flow rate and preventing impurities from depositing on the lens 62.

[0052] At this time, the guide tube 63 is inserted outside the frame 61, and multiple component holes 163b-463b are formed at its upper end, allowing for assembly and disassembly of multiple components to the frame 61. Here, about 3-4 component holes are formed to allow assembly and attachment to the frame 61 by bolt fastening or pressure application.

[0053] At this time, the guide tube 63 should remain attached to the outside of the frame 61 at high temperature and not be deformed. Therefore, high temperature resistant materials such as graphite, ceramics, and molybdenum can be used as materials.

[0054] At this time, the high-temperature endoscope 60 of the spindle growth apparatus equipped with the guide tube 63 has a guide section of predetermined length formed from the lens 62 located at the exhaust port 61a. Therefore, the inert gas discharged to the exhaust port 61a has a fluid flow that flows through the front part of the lens 62 to the partition wall on the opposite side, then flows along the guide section to the end of the guide tube 63 and then separates from the guide tube 63. Thus, since the inert gas flows out sequentially with the length of the guide section filling a larger space, if impurities want to come into contact with the lens 62, they need to pass through this flow of inert gas filling the guide section, and impurities are difficult to penetrate to the surface of the lens 62, thereby more effectively preventing the deposition of impurities on the lens 62.

[0055] refer to Figure 3This illustration shows a spindle growth apparatus 20 for a high-temperature endoscope 60, adapted to a first embodiment of the present invention, to prevent impurity deposition. A growth furnace 50 is disposed inside the chamber 20, and heat-insulating materials 41, 42, and 43 are provided on its upper, side, and lower parts. A frame 61 of the high-temperature endoscope 60 is provided through a passage in the side of the chamber 20 to the vicinity of the growth furnace 50, ensuring a clear field of view so that the diameter and condition of the growing spindle can be observed through a lens 62 provided at the end of the frame 61. Thus, impurities generated in the growth furnace 50 can flow directly and in large quantities to the lens 62 side.

[0056] refer to Figure 4 The diagram shows the end of a high-temperature endoscope 60 according to a first embodiment of the present invention, which prevents impurity deposition. A guide tube 63 is assembled at the end of the frame 61 of the high-temperature endoscope 60. The guide portion of the guide tube 63 protects the lens 62 by extending a predetermined length from the lens 62. Since inert gas is discharged through the vent 61a of the frame 61 while the guide portion is filled, impurities flowing toward the lens 62 side cannot pass through the inert gas filling the guide portion and are instead discharged back to the opposite side of the lens 62, thereby effectively preventing impurities from depositing on the surface of the lens 62.

[0057] refer to Figure 5 This illustrates a high-temperature endoscope 60 according to a second embodiment of the present invention, designed to prevent impurity deposition. The difference from the previous embodiment is that a heat-insulating material 64 for heat insulation of the frame 61 is provided in the guide tube 63.

[0058] At this time, heat insulation material 64 is provided on the guide tube 63, which can improve the heat insulation performance of the frame 61.

[0059] In the case of a high-temperature endoscope, including a water-cooling system, heat loss from the surrounding area can occur. To prevent this problem, a heat-insulating material 64 is inserted outside the guide tube 63, resulting in a guide tube 63 structure that not only reduces heat loss but also allows for safe use in high-temperature areas.

[0060] refer to Figure 6 The diagram illustrates a guide tube 163 of a high-temperature endoscope according to a third embodiment of the present invention for preventing impurity deposition. A reduced-diameter portion 163a may be formed at the end of the guide tube 163.

[0061] At this time, the inert gas is guided through the guide section of the guide tube 163, and a narrowed section 163a with a reduced inner diameter is formed at the end of the guide section. The shape of this narrowed section 163a amplifies the vortex of the injected inert gas, and the narrow channel can also be used to increase the flow rate according to Bernoulli's theorem.

[0062] refer to Figure 7The diagram illustrates a guide tube 263 of a high-temperature endoscope according to a fourth embodiment of the present invention, designed to prevent impurity deposition. The reduced-diameter portion 263a of the guide tube 263 is formed with its inner diameter decreasing linearly towards the end. That is, this is designed to machine the end of the guide portion into a beveled shape in cross-section to facilitate smoother flow of inert gas.

[0063] refer to Figure 8 The diagram illustrates a guide tube 363 of a high-temperature endoscope according to a fifth embodiment of the present invention for preventing impurity deposition. The guide tube 363 has an end formed as an elongated aperture 363a on a plane. Due to this elongated aperture 363a shape, it is functionally possible to monitor only the diameter of the crystal and the observed local area.

[0064] refer to Figure 9 The diagram illustrates a guide tube 463 of a high-temperature endoscope according to a sixth embodiment of the present invention for preventing impurity deposition. A biased protrusion 463a is formed at the end of the guide tube 463, protruding inward on one side. This biased protrusion 463a is positioned in front of the exhaust port 61a, allowing the emitted inert gas to collide with the opposite partition wall and form a vortex. By increasing the flow of the inert gas vortex in this way, deposition caused by impurity penetration can be further prevented.

[0065] The embodiments of the present invention have been described, but the concept of the present invention is not limited to the embodiments presented in this specification. Those skilled in the art who understand the concept of the present invention can easily propose other embodiments by adding, modifying, deleting, or adding components within the same conceptual scope, and these are also included within the conceptual scope of the present invention.

[0066] Industrial applicability

[0067] This invention is applicable to ingot growth apparatus.

Claims

1. A high-temperature endoscope for preventing impurity deposition in an ingot growth apparatus, comprising: The frame extends into the chamber of the ingot growth apparatus and has an exhaust port at the end for discharging inert gas; A lens, disposed at the center of the end of the frame, and protected by an inert gas discharged from the vent; and A guide tube, disposed outside the frame, forms a guide portion extending from the end of the frame to guide the inert gas, thereby increasing the flow rate and preventing impurities from depositing on the lens. The inner surface of the end of the guide tube has a reduced diameter portion, which protrudes toward the longitudinal central axis of the guide tube. The reduced-diameter section has an inner diameter that linearly decreases from a first diameter to a second diameter towards the end of the guide tube. Wherein, at the location of the lens, the inner diameter of the guide tube is relatively larger than the first diameter of the tapered section. Wherein, the difference between the inner diameter of the guide tube and the first diameter at the location of the lens is relatively smaller than the difference between the first diameter and the second diameter.

2. The high-temperature endoscope for preventing impurity deposition in the ingot growth apparatus according to claim 1, characterized in that, At least one exhaust port is provided on one end side of the frame so that the direction of the discharged gas is toward the center of the lens.

3. The high-temperature endoscope for preventing impurity deposition in the ingot growth apparatus according to claim 1, characterized in that, Thermal insulation material is provided in the guide pipe for the insulation of the frame.

4. The high-temperature endoscope for preventing impurity deposition in the ingot growth apparatus according to claim 1, characterized in that, The guide tube is inserted outside the frame and has multiple component holes formed at its upper end, allowing for assembly and disassembly of multiple components within the frame.

5. The high-temperature endoscope for preventing impurity deposition in the ingot growth apparatus according to claim 1, characterized in that, The guide tube has an elongated hole shape at its end on a plane.

6. The high-temperature endoscope for preventing impurity deposition in the ingot growth apparatus according to claim 1, characterized in that, An offset protrusion is formed at the end of the guide tube, the offset protrusion protruding inward on one side.

7. The high-temperature endoscope for preventing impurity deposition in the ingot growth apparatus according to claim 6, characterized in that, The deflected protrusion of the guide pipe is located in front of the exhaust port, so that the discharged inert gas collides with the partition wall on the opposite side to form a vortex.

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