Semiconductor laser element with built-in piezoelectric polarization control layer

Abstract

The application provides a semiconductor laser element with a built-in piezoelectric polarization control layer, and relates to the technical field of semiconductor optoelectronic devices. The semiconductor laser element comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer. A piezoelectric polarization control layer is arranged between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer. The piezoelectric polarization control layer is any one or any combination of HfO2, NiCo2O4, CoFe2O4, FeF2 and ZrO2. The piezoelectric polarization control layer generates piezoelectric polarization under the action of an electric field generated by current injection, reconciles spontaneous polarization and piezoelectric polarization of the active layer, reduces quantum confinement Stark effect, reduces the valence band offset of the laser element, improves the injection efficiency and transport of holes, improves the stimulated radiation and electric excitation gain of the laser element, simultaneously, relieves the rise of piezoelectric polarization caused by thermal mismatch, reduces the excitation threshold of the laser element, enhances the confinement factor, and improves the lasing power and slope efficiency of the laser element.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor photoelectric devices, in particular to a semiconductor laser element with a built-in piezoelectric polarization control layer. BACKGROUND

[0002] Lasers are widely used in laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are various. The main types of lasers include solid-state, gas, liquid, semiconductor and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long service life, simple and compact structure, and small size. There are great differences between lasers and nitride semiconductor light-emitting diodes. 1) Laser is generated by stimulated radiation of carriers, with small spectral half-width and high brightness. The output power of a single laser can reach W level, while the output power of a single nitride semiconductor light-emitting diode is in mW level. 2) The current density of the laser reaches KA / cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, thereby causing stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch, resulting in more serious efficiency droop effect. 3) Light-emitting diode is self-transition radiation without external action, and the non-coherent light jumps from high energy level to low energy level. Laser is stimulated transition radiation, and the energy of the induced photon should be equal to the energy level difference of the electron transition. The generated photon and the induced photon are homophase coherent light. 4) Different principles: the light-emitting diode is under the action of external voltage, and the electron-hole jumps to the quantum well or p-n junction to produce radiation recombination. Laser needs to meet the lasing conditions, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation of the light in the gain medium causes light amplification. When the gain is greater than the loss, laser is finally output. The nitride semiconductor laser has the following problems: 1. Strong piezoelectric polarization effect induced by lattice mismatch and large strain of the active layer, strong QCSE quantum confinement Stark effect, increased valence band step difference of the laser, more difficult transportation of holes in the quantum well, uneven carrier injection, uneven gain, and limited improvement of the electrical lasing gain of the laser; 2. Large current and large current density of the laser generate a large amount of heat, and the device has poor heat dissipation and poor temperature characteristics, which exacerbates the thermal mismatch between the semiconductor epitaxial layers, resulting in problems such as rising threshold current, decreasing output optical power and slope efficiency. SUMMARY

[0003] The present application aims to provide a semiconductor laser element with a built-in piezoelectric polarization control layer, which solves the problems existing in the prior art.

[0004] The semiconductor laser element with built-in piezoelectric polarization control layer comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, an upper confinement layer, and a piezoelectric polarization control layer arranged between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer.

[0005] As a preferred technical solution of the present application, the piezoelectric polarization control layer generates piezoelectric polarization under the action of the electric field of current injection, adjusts the spontaneous polarization and piezoelectric polarization of the active layer, reduces the quantum confinement Stark effect, reduces the valence band offset of the laser element, improves the injection efficiency and transport of holes, improves the stimulated radiation and electrical excitation gain of the laser element, at the same time, alleviates the rise of piezoelectric polarization caused by thermal mismatch, reduces the excitation threshold of the laser element, enhances the confinement factor, and improves the lasing power and slope efficiency of the laser element.

[0006] As a preferred technical solution of the present application, the piezoelectric polarization control layer is any one or any combination of HfO2, NiCo2O4, CoFe2O4, FeF2, and ZrO2.

[0007] As a preferred technical solution of the present application, the piezoelectric polarization control layer of any combination includes, but is not limited to, the following structures of heterojunction, superlattice, quantum well, core-shell structure, quantum dot, etc.:

[0008] HfO2 / NiCo2O4, HfO2 / CoFe2O4, HfO2 / FeF2, HfO2 / ZrO2, NiCo2O4 / CoFe2O4, NiCo2O4 / FeF2, NiCo2O4 / ZrO2, CoFe2O4 / FeF2, CoFe2O4 / ZrO2, FeF2 / ZrO2.

[0009] As a preferred technical solution of the present application, the piezoelectric polarization control layer of any combination includes, but is not limited to, the following structures of heterojunction, superlattice, quantum well, core-shell structure, quantum dot, etc.:

[0010] HfO2 / NiCo2O4 / CoFe2O4, HfO2 / NiCo2O4 / FeF2, HfO2 / NiCo2O4 / ZrO2, HfO2 / CoFe2O4 / FeF2, HfO2 / CoFe2O4 / ZrO2, HfO2 / FeF2 / ZrO2, NiCo2O4 / CoFe2O4 / FeF2, NiCo2O4 / CoFe2O4 / ZrO2, NiCo2O4 / FeF2 / ZrO2, CoFe2O4 / FeF2 / ZrO2.

[0011] As the preferred technical scheme of the present application, the arbitrary combination of the piezoelectric polarization regulation layer includes the following four combinations of heterojunction, superlattice, quantum well, core-shell structure, quantum dot and the like, but is not limited to the following structures:

[0012] HfO2 / NiCo2O4 / CoFe2O4 / FeF2, HfO2 / NiCo2O4 / CoFe2O4 / ZrO2, HfO2 / NiCo2O4 / FeF2 / ZrO2, HfO2 / CoFe2O4 / Fe F2 / ZrO2, NiCo2O4 / CoFe2O4 / FeF2 / ZrO2.

[0013] As the preferred technical scheme of the present application, the arbitrary combination of the piezoelectric polarization regulation layer includes the following five combinations of heterojunction, superlattice, quantum well, core-shell structure, quantum dot and the like, but is not limited to the following combinations

[0014] HfO2 / NiCo2O4 / CoFe2O4 / FeF2 / ZrO2.

[0015] As the preferred technical scheme of the present application, the thickness of the piezoelectric polarization regulation layer is 5-500 nm.

[0016] As the preferred technical scheme of the present application, the lower limiting layer, the lower waveguide layer, the active layer, the upper waveguide layer, the electron blocking layer and the upper limiting layer include any one or any multi-combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0017] As the preferred technical scheme of the present application, the substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0018] Compared with the prior art, the present application has the following advantages:

[0019] In the scheme of the present application:

[0020] The piezoelectric polarization regulating layer is HfO2, NiCo2O4, CoFe2O4, FeF2, ZrO2 or any combination thereof; the piezoelectric polarization regulating layer generates piezoelectric polarization under the action of the electric field of current injection, adjusts the spontaneous polarization and piezoelectric polarization of the active layer, reduces the quantum confinement Stark effect, accelerates the stimulated radiation of the laser element, reduces the excitation threshold of the laser element, enhances the confinement factor, and improves the lasing power and slope efficiency of the laser element. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 A structure diagram of a semiconductor laser element with a built-in piezoelectric polarization regulating layer is provided.

[0022] Indicated in the figure:

[0023] 100: substrate; 101: lower confinement layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer; 105: electron blocking layer; 106: upper confinement layer; 107: piezoelectric polarization regulating layer. DETAILED DESCRIPTION

[0024] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments of the present application.

[0025] Therefore, the following detailed description of the embodiments of the present application is not intended to limit the scope of the claimed application, but only represents some embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative labor are within the scope of protection of the present application.

[0026] It should be noted that the embodiments in the present application and the features and technical solutions in the embodiments can be combined with each other without conflict.

[0027] Embodiment 1

[0028] Please refer to Figure 1 The present embodiment provides a technical solution: a semiconductor laser element with a built-in piezoelectric polarization regulating layer, which comprises, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. A piezoelectric polarization regulating layer 107 is arranged between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0029] The piezoelectric polarization regulation layer 107 generates piezoelectric polarization under the action of the electric field of current injection, regulates the spontaneous polarization and piezoelectric polarization of the active layer, reduces the quantum confinement Stark effect, reduces the valence band offset of the laser element, improves the injection efficiency and transport of holes, improves the stimulated radiation and electrical excitation gain of the laser element, at the same time, alleviates the rise of piezoelectric polarization caused by thermal mismatch, reduces the excitation threshold of the laser element, enhances the limiting factor, and improves the lasing power and slope efficiency of the laser element.

[0030] The piezoelectric polarization regulation layer is any one of HfO2, NiCo2O4, CoFe2O4, FeF2, and ZrO2.

[0031] The thickness of the piezoelectric polarization regulation layer 107 is 5-500 nm.

[0032] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0033] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0034] Embodiment 2

[0035] Please refer to Figure 1 The embodiment provides a technical solution: a semiconductor laser element with a built-in piezoelectric polarization regulation layer, which includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 from bottom to top, and a piezoelectric polarization regulation layer 107 is arranged between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0036] The piezoelectric polarization regulation layer 107 generates piezoelectric polarization under the action of the electric field of current injection, regulates the spontaneous polarization and piezoelectric polarization of the active layer, reduces the quantum confinement Stark effect, reduces the valence band offset of the laser element, improves the injection efficiency and transport of holes, improves the stimulated radiation and electrical gain of the laser element, at the same time, alleviates the rise of piezoelectric polarization caused by thermal mismatch, reduces the excitation threshold of the laser element, enhances the limiting factor, and improves the lasing power and slope efficiency of the laser element.

[0037] Any combination of the piezoelectric polarization regulation layer 107 includes the following binary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, and the like, but is not limited to the following structures:

[0038] HfO2 / NiCo2O4, HfO2 / CoFe2O4, HfO2 / FeF2, HfO2 / ZrO2, NiCo2O4 / CoFe2O4, NiCo2O4 / FeF2, NiCo2O4 / ZrO2, CoFe2O4 / FeF2, CoFe2O4 / ZrO2, FeF2 / ZrO2.

[0039] The thickness of the piezoelectric polarization regulation layer 107 is 5-500 nm.

[0040] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multi-combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0041] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0042] Embodiment 3

[0043] Please refer to Figure 1The embodiment provides a technical scheme: a semiconductor laser element with a built-in piezoelectric polarization control layer, which comprises, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, an upper confinement layer 106, and a piezoelectric polarization control layer 107 arranged between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0044] The piezoelectric polarization control layer 107 generates piezoelectric polarization under the action of the electric field of current injection, adjusts the spontaneous polarization and piezoelectric polarization of the active layer, reduces the quantum confinement Stark effect, reduces the valence band offset of the laser element, improves the injection efficiency and transport of holes, improves the stimulated radiation and electrical excitation gain of the laser element, at the same time, alleviates the rise of piezoelectric polarization caused by thermal mismatch, reduces the excitation threshold of the laser element, enhances the confinement factor, and improves the lasing power and slope efficiency of the laser element.

[0045] The piezoelectric polarization control layer 107 includes, but is not limited to, the following structures:

[0046] HfO2 / NiCo2O4 / CoFe2O4, HfO2 / NiCo2O4 / FeF2, HfO2 / NiCo2O4 / ZrO2, HfO2 / CoFe2O4 / FeF2, HfO2 / CoFe2O4 / ZrO2, HfO2 / FeF2 / ZrO2, NiCo2O4 / CoFe2O4 / FeF2, NiCo2O4 / CoFe2O4 / ZrO2, NiCo2O4 / FeF2 / ZrO2, CoFe2O4 / FeF2 / ZrO2.

[0047] The thickness of the piezoelectric polarization control layer 107 is 5-500 nm.

[0048] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multiple combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0049] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0050] Embodiment 4

[0051] Please refer to Figure 1 The embodiment provides a technical scheme: a semiconductor laser element with a built-in piezoelectric polarization control layer, and the semiconductor laser element with the built-in piezoelectric polarization control layer sequentially includes a substrate 100, a lower limiting layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, an upper limiting layer 106, and a piezoelectric polarization control layer 107 arranged between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0052] The piezoelectric polarization control layer 107 generates piezoelectric polarization under the action of an electric field of current injection, adjusts spontaneous polarization and piezoelectric polarization of the active layer, reduces quantum confinement Stark effect, reduces a valence band of the laser element, improves hole injection efficiency and transportation, improves stimulated radiation and electrical excitation gain of the laser element, simultaneously, relieves piezoelectric polarization rising caused by thermal mismatch, reduces an excitation threshold of the laser element, enhances a limiting factor, and improves laser emission power and slope efficiency of the laser element.

[0053] Any combination of the piezoelectric polarization control layer 107 includes, but is not limited to, the following structures of heterojunction, superlattice, quantum well, core-shell structure, quantum dot and the like:

[0054] HfO2 / NiCo2O4 / CoFe2O4 / FeF2, HfO2 / NiCo2O4 / CoFe2O4 / ZrO2, HfO2 / NiCo2O4 / FeF2 / ZrO2, HfO2 / CoFe2O4 / Fe F2 / ZrO2, NiCo2O4 / CoFe2O4 / FeF2 / ZrO2.

[0055] The thickness of the piezoelectric polarization control layer 107 is 5-500 nm.

[0056] The lower confining layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confining layer 106 include any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0057] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0058] Embodiment 5

[0059] Please refer to Figure 1 The embodiment provides a technical solution: a semiconductor laser element with a built-in piezoelectric polarization control layer. The semiconductor laser element with a built-in piezoelectric polarization control layer sequentially includes a substrate 100, a lower confining layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confining layer 106. A piezoelectric polarization control layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0060] The piezoelectric polarization control layer 107 generates piezoelectric polarization under the action of the electric field of current injection, adjusts the spontaneous polarization and piezoelectric polarization of the active layer, reduces the quantum confinement Stark effect, reduces the valence band offset of the laser element, improves the injection efficiency and transport of holes, improves the stimulated radiation and electrical excitation gain of the laser element, at the same time, alleviates the rise of piezoelectric polarization caused by thermal mismatch, reduces the excitation threshold of the laser element, enhances the confinement factor, and improves the lasing power and slope efficiency of the laser element.

[0061] Any combination of the piezoelectric polarization control layer 107 includes the following five combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, and other structures, but is not limited to the following structures: HfO2 / NiCo2O4 / CoFe2O4 / FeF2 / ZrO2.

[0062] The thickness of the piezoelectric polarization control layer 107 is 5-500 nm.

[0063] The lower confining layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confining layer 106 comprise any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0064] The substrate 100 comprises any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0065] Compared with the prior art, the present application has the following advantages: a piezoelectric polarization regulating layer is arranged between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer; the piezoelectric polarization regulating layer is any one or any combination of HfO2, NiCo2O4, CoFe2O4, FeF2, and ZrO2; the piezoelectric polarization regulating layer generates piezoelectric polarization under the action of the electric field of current injection, adjusts the spontaneous polarization and piezoelectric polarization of the active layer, reduces the quantum confinement Stark effect, reduces the valence band offset of the laser element, improves the injection efficiency and transport of holes, improves the stimulated radiation and electric excitation gain of the laser element, at the same time, alleviates the rise of piezoelectric polarization caused by thermal mismatch, reduces the excitation threshold of the laser element, enhances the confinement factor, and improves the lasing power and slope efficiency of the laser element.

[0066] The above examples are only used to illustrate the technical solutions described in the present application and do not limit the present application. Although the present application has been described in detail with reference to the above examples, the present application is not limited to the above specific embodiments. Therefore, any modification or equivalent replacement of the present application; and all technical solutions and improvements without departing from the spirit and scope of the present application are encompassed in the scope of the claims of the present application.

Claims

1. A semiconductor laser device with built-in piezoelectric polarization control layer, comprising, from bottom to top, a substrate (100), a lower cladding layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105), and an upper cladding layer (106), characterized in that: A piezoelectric polarization control layer (107) is arranged between the active layer (103) and the upper waveguide layer (104) and between the active layer (103) and the lower waveguide layer. The piezoelectric polarization control layer generates piezoelectric polarization under the action of the electric field of current injection, adjusts the spontaneous polarization and piezoelectric polarization of the active layer, reduces the quantum confinement Stark effect, reduces the valence band offset of the laser element, improves the injection efficiency and transport of holes, improves the stimulated radiation and electrical excitation gain of the laser element, at the same time, alleviates the rise of piezoelectric polarization caused by thermal mismatch, reduces the excitation threshold of the laser element, enhances the limiting factor, and improves the lasing power and slope efficiency of the laser element. The piezoelectric polarization control layer (107) is any one or any combination of HfO2, NiCo2O4, CoFe2O4, FeF2, and ZrO2.

2. A semiconductor laser device having a built-in piezoelectrically poled control layer as claimed in claim 1, characterized in that Any combination of the piezoelectric polarization control layer (107) includes the following binary combination of heterojunction, superlattice, quantum well, core-shell structure, quantum dot structure but is not limited to the following structure: HfO2 / NiCo2O4, HfO2 / CoFe2O4, HfO2 / FeF2, HfO2 / ZrO2, NiCo2O4 / CoFe2O4, NiCo2O4 / FeF2, NiCo2O4 / ZrO2, CoFe2O4 / FeF2, CoFe2O4 / ZrO2, FeF2 / ZrO2.

3. A semiconductor laser device with a built-in piezoelectrically poled control layer as described in claim 1, wherein Any combination of the piezoelectric polarization control layer (107) includes the following ternary combination of heterojunction, superlattice, quantum well, core-shell structure, quantum dot structure but is not limited to the following structure: HfO2 / NiCo2O4 / CoFe2O4, HfO2 / NiCo2O4 / FeF2, HfO2 / NiCo2O4 / ZrO2, HfO2 / CoFe2O4 / FeF2, HfO2 / CoFe2O4 / ZrO2, HfO2 / FeF2 / ZrO2, NiCo2O4 / CoFe2O4 / FeF2, NiCo2O4 / CoFe2O4 / ZrO2, NiCo2O4 / FeF2 / ZrO2, CoFe2O4 / FeF2 / ZrO2.

4. A semiconductor laser device having a built-in piezoelectrically poled control layer as set forth in claim 1, characterized in that, Any combination of the piezoelectric polarization control layer (107) includes the following quaternary combination of heterojunction, superlattice, quantum well, core-shell structure, quantum dot structure but is not limited to the following structure: HfO2 / NiCo2O4 / CoFe2O4 / FeF2, HfO2 / NiCo2O4 / CoFe2O4 / ZrO2, HfO2 / NiCo2O4 / FeF2 / ZrO2, HfO2 / CoFe2O4 / FeF2 / ZrO2, NiCo2O4 / CoFe2O4 / FeF2 / ZrO2.

5. A semiconductor laser device having a built-in piezoelectrically poled control layer as set forth in claim 1, characterized in that, Any combination of the piezoelectric polarization control layer (107) includes the following quinary combination of heterojunction, superlattice, quantum well, core-shell structure, quantum dot structure but is not limited to the following structure: HfO2 / NiCo2O4 / CoFe2O4 / FeF2 / ZrO2.

6. A semiconductor laser device having a built-in piezoelectrically poled control layer as set forth in claim 1, characterized in that, The thickness of the piezoelectric polarization control layer (107) is 5-500 nm.

7. A semiconductor laser device having a built-in piezoelectrically poled control layer as set forth in claim 1, characterized in that, The lower confining layer (101), the lower waveguide layer (102), the active layer (103), the upper waveguide layer (104), the electron blocking layer (105), and the upper confining layer (106) comprise any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

8. A semiconductor laser device with a built-in piezoelectrically poled control layer as described in claim 1, wherein The substrate (100) comprises any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

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