A terahertz metasurface NOR gate logic encoder with broadband electronically controlled conversion

Abstract

The present invention discloses a terahertz metasurface NOR gate logic encoder with wide-band electrically controlled conversion, which is composed of a high-resistance silicon layer, a polyimide layer, a common ground electrode, and a frequency control structure; the polyimide layer and the high-resistance silicon layer are stacked, and the lower surface of the polyimide layer is in contact with the upper surface of the high-resistance silicon layer; the frequency control structure is stacked on the upper surface of the polyimide layer, and the common ground electrode is stacked on the lower surface of the high-resistance silicon layer. The two electrode patches of the frequency control structure are respectively connected to the positive pole of a DC regulated power supply via a switch, and the common ground electrode is directly connected to the negative pole of the DC regulated power supply. The present invention utilizes the property of applying voltage to graphene to change its conductivity to achieve the regulation of transmittance in a specific frequency band. It can achieve the effect of outputting a wide-band NOR gate digital logic terahertz signal by inputting two digital logic electrical signals, and has the characteristics of simple production, low cost, and stable performance.

Description

Technical Field

[0001] The present invention relates to the field of terahertz technology, and in particular to a terahertz metasurface NOR gate logic encoder with wide-band electrically controlled conversion. Background Art

[0002] The recent maturation of 5G communication network technology and the acceleration of its commercial deployment signal that mastering the latest information technology innovations will secure the initiative in global economic development. Terahertz communication technology is expected to achieve a peak rate of 1Tbit / s and latency in the microsecond range, providing 1,000 times greater capacity than 5G networks and offering one of the best options for implementing 6G communication technology. The terahertz spectrum has become a spectral resource that developed countries are eager to research and seize. High-efficiency, novel terahertz logic coding devices are key components in the development of terahertz communication technology. Currently, most terahertz logic coding devices designed and developed are single- or multi-frequency control devices coupled with metal resonant units. These devices cannot meet the broadband requirements, a critical issue facing the urgent need for broadband terahertz logic coding devices. Summary of the Invention

[0003] The present invention aims to solve the problem of shortage of existing broadband terahertz encoding devices and provides a broadband electrically controlled conversion terahertz metasurface NOR gate logic encoder.

[0004] To solve the above problems, the present invention is achieved through the following technical solutions:

[0005] A broadband electrically controlled terahertz metasurface NOR gate logic encoder, including an encoder body, which is composed of a high-resistance silicon layer, a polyimide layer, a common ground electrode, and a frequency control structure; the polyimide layer and the high-resistance silicon layer are stacked, and the lower surface of the polyimide layer is adhered to the upper surface of the high-resistance silicon layer; the frequency control structure is stacked on the upper surface of the polyimide layer, and the common ground electrode is stacked on the lower surface of the high-resistance silicon layer; the frequency control structure includes a surface periodic structure and a lead-out structure; the surface periodic structure is in the middle of the frequency control structure and is composed of multiple transmission units arranged in a regular matrix; each transmission unit is composed of 3 metal patches and 4 graphene patches; the 3 metal patches are respectively a Chinese character-shaped metal patch, a p-shaped metal patch, and a q-shaped metal patch; the Chinese character-shaped metal patch is in the shape of a Chinese character made of metal material, and 2 gaps are opened on the lowest horizontally extending metal strip; the p-shaped metal patch is in the shape of a p made of metal material, and 1 gap is opened on the highest horizontally extending metal strip; the q-shaped metal patch is in the shape of a q made of metal material, and 1 gap is opened on the highest horizontally extending metal strip; the Chinese character-shaped metal patch is located in the middle of the transmission unit, the p-shaped metal patch and the q-shaped metal patch are respectively located on the opposite sides of the Chinese character-shaped metal patch, and there is a gap between the p-shaped metal patch and the q-shaped metal patch and the Chinese character-shaped metal patch; the 4 graphene patches are all strip-shaped made of graphene material; the 4 graphene patches are respectively arranged at the 4 gaps of the 3 metal patches to close the gaps of the metal patches; the lead-out structure is on the relatively outer side of the surface periodic structure and is composed of 2 electrode patches; the 2 electrode patches are both in the shape of comb teeth made of metal material, the first electrode patch is connected to the Chinese character-shaped metal patches of all transmission units, and the second electrode patch is respectively connected to all p-shaped metal patches and q-shaped metal patches; the common ground electrode is a closed ring made of metal material; the 2 electrode patches of the frequency control structure are respectively connected to the positive pole of a DC regulated power supply via 1 switch, and the common ground electrode is directly connected to the negative pole of the DC regulated power supply.

[0006] In the above solution, the center of the common ground electrode is vertically opposite to the center of the surface periodic structure.

[0007] In the above solution, the area covered by the surface periodic structure is larger than the area of the terahertz beam spot irradiated on the encoder body; the area covered by the inner ring of the common ground electrode is larger than the area of the terahertz beam spot irradiated on the encoder body.

[0008] In the above solution, the area covered by the surface periodic structure is 1.5 - 2.5 times the area of the terahertz beam spot irradiated on the encoder body, and the area covered by the inner ring of the common ground electrode is 1.5 - 2.5 times the area of the terahertz beam spot irradiated on the encoder body.

[0009] In the above solution, each transmission unit is symmetric about its longitudinal central axis.

[0010] In the above solution, the Chinese character-shaped metal patch is composed of 7 strip-shaped metal strips; the first metal strip, the second metal strip, the third metal strip, and the fourth metal strip all extend horizontally and are parallel to each other; the first metal strip, the second metal strip, the third metal strip, and the fourth metal strip have the same length; the fifth metal strip, the sixth metal strip, and the seventh metal strip all extend vertically and are parallel to each other; the sixth metal strip and the seventh metal strip have the same length, and the length of the fifth metal strip is greater than the lengths of the sixth metal strip and the seventh metal strip; the first metal strip and the second metal strip are on the same horizontal line, and the right end of the first metal strip and the left end of the second metal strip are connected to a point in the middle of the fifth metal strip; the left end of the first metal strip is connected to the upper end of the sixth metal strip, and the right end of the second metal strip is connected to the upper end of the seventh metal strip; the third metal strip and the fourth metal strip are on the same horizontal line, and the right end of the third metal strip and the left end of the fourth metal strip are connected to a point at the lower part of the fifth metal strip; the left end of the third metal strip is connected to the lower end of the sixth metal strip, and the right end of the fourth metal strip is connected to the lower end of the seventh metal strip; a notch is provided in the middle of each of the third metal strip and the fourth metal strip.

[0011] In the above solution, both the p-shaped metal patch and the q-shaped metal patch are composed of 4 strip-shaped metal strips; the first metal strip and the second metal strip both extend horizontally and are parallel to each other; the first metal strip and the second metal strip have the same length; the third metal strip and the fourth metal strip both extend vertically and are parallel to each other; the length of the third metal strip is less than the length of the fourth metal strip; the left end of the first metal strip is connected to the upper end of the fourth metal strip, and the right end of the first metal strip is connected to the upper end of the third metal strip; the left end of the second metal strip is connected to the middle of the fourth metal strip, and the right end of the second metal strip is connected to the lower end of the third metal strip; a notch is provided in the middle of the first metal strip.

[0012] In the above solution, the 4 graphene patches have the same length and width.

[0013] In the above solution, the common ground electrode is circular.

[0014] In the above solution, the voltage of the DC regulated power supply is 5V to 24V.

[0015] Compared with the prior art, the present invention realizes the regulation of transmittance in a specific frequency band (0.97~1.47THz) by utilizing the characteristic of applying voltage to graphene to change its conductivity. It can achieve the effect of outputting a wide-band NOR gate digital logic terahertz signal by inputting two digital logic electrical signals. When no voltage is connected to the two electrodes, the encoder has a transmittance of up to 67% in the wide-band, corresponding to the binary digital logic 1; when voltage is applied to any electrode, the increase in the Fermi energy level of the graphene connected to this electrode causes its conductivity to increase, and the encoder's transmittance at the center frequency drops to 5%, corresponding to the binary digital logic 0; when voltage is applied to the two electrodes, the encoder's transmittance at the center frequency drops to 1.9%, corresponding to the binary digital logic 0; the present invention has the characteristics of simple production, low cost, and stable performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A schematic diagram of the three-dimensional structure of a terahertz metasurface NOR gate logic encoder with wide-band electrically controlled conversion;

[0017] Figure 2 for Figure 1 A top view of

[0018] Figure 3 for Figure 1 Bottom view of

[0019] Figure 4 Schematic diagram of the structure of a transmission unit;

[0020] Figure 5 This is a schematic diagram of a curve showing how the transmittance of terahertz waves changes with frequency when the electrodes are powered on and powered off.

[0021] Numbers in the figure: 1 common ground electrode; 2 high-resistance silicon layer; 3 polyimide layer; 4 frequency control structure; 41 metal patch; 42 graphene patch; 43 electrode patch. DETAILED DESCRIPTION

[0022] To make the objectives, technical solutions, and advantages of the present invention more clearly understood, the present invention is further described below in detail with reference to specific examples and the accompanying drawings. It should be noted that directional terms mentioned in the examples, such as "upper," "lower," "center," "left," "right," "front," and "back," are merely references to the directions in the accompanying drawings. Therefore, the directions used are for illustrative purposes only and are not intended to limit the scope of protection of the present invention.

[0023] See also Figure 1, A terahertz metasurface or NOT gate logic encoder with broadband electric control conversion, which is composed of a common ground electrode 1, a high-resistance silicon layer 2, a polyimide layer 3 and a frequency control structure 4. The high-resistance silicon layer 2 and the polyimide layer 3 are stacked, and the upper surface of the high-resistance silicon layer 2 is adhered to the lower surface of the polyimide layer 3. The high-resistance silicon layer 2 is made of high-resistance silicon material, and the polyimide layer 3 is made of polyimide material. The shapes of the high-resistance silicon layer 2 and the polyimide layer 3 can be circular, square or polygonal, etc., as long as they can accommodate the common ground electrode 1 and the frequency control structure 4. In a preferred embodiment of the present invention, both the high-resistance silicon layer 2 and the polyimide layer 3 are rectangular, the thickness of the high-resistance silicon layer 2 is 0.5 mm, and the thickness of the polyimide layer 3 is 28 μm. The frequency control structure 4 is stacked on the upper surface of the polyimide layer 3. The common ground electrode 1 is stacked on the lower surface of the high-resistance silicon layer 2.

[0024] See Figure 2 , The frequency control structure 4 includes two parts: a surface periodic structure and a lead-out structure.

[0025] The surface periodic structure is located in the middle of the frequency control structure 4 and is composed of multiple transmission units arranged in a regular matrix. Each transmission unit is as Figure 3 shown, and its whole is symmetric about its longitudinal central axis. Each transmission unit is composed of 3 metal patches 41 and 4 graphene patches 42. In a preferred embodiment of the present invention, the thickness of the metal patches 41 is 0.2 - 0.8 μm, and the thickness of the graphene patches 42 is 0.3 nm - 1 nm.

[0026] The 3 metal patches 41 are respectively a Chinese character-shaped metal patch 41, a p-shaped metal patch 41 and a q-shaped metal patch 41. The Chinese character-shaped metal patch 41 is located in the middle of the transmission unit, and the p-shaped metal patch 41 and the q-shaped metal patch 41 are respectively located on the opposite sides of the Chinese character-shaped metal patch 41, and there is a gap between the p-shaped metal patch 41 and the q-shaped metal patch 41 and the Chinese character-shaped metal patch 41.

[0027] The Chinese character-shaped metal patch 41 is in the shape of a Chinese character made of metal material. The Chinese character-shaped metal patch 41 is composed of 7 strip-shaped metal bars. The first metal bar, the second metal bar, the third metal bar and the fourth metal bar all extend horizontally and are parallel to each other. The first metal bar, the second metal bar, the third metal bar and the fourth metal bar have the same length. The fifth metal bar, the sixth metal bar and the seventh metal bar all extend vertically and are parallel to each other. The sixth metal bar and the seventh metal bar have the same length, and the length of the fifth metal bar is greater than the lengths of the sixth metal bar and the seventh metal bar. The first metal bar and the second metal bar are on the same horizontal line, and the right end of the first metal bar and the left end of the second metal bar are connected to a point in the middle of the fifth metal bar. The left end of the first metal bar is connected to the upper end of the sixth metal bar, and the right end of the second metal bar is connected to the upper end of the seventh metal bar. The third metal bar and the fourth metal bar are on the same horizontal line, and the right end of the third metal bar and the left end of the fourth metal bar are connected to a point at the lower part of the fifth metal bar. The left end of the third metal bar is connected to the lower end of the sixth metal bar, and the right end of the fourth metal bar is connected to the lower end of the seventh metal bar. A notch is provided in the middle of each of the third metal bar and the fourth metal bar.

[0028] The p-shaped metal patch 41 is in the shape of a p made of metal material, and the q-shaped metal patch 41 is in the shape of a q made of metal material. The p-shaped metal patch 41 and the q-shaped metal patch 41 are both composed of 4 strip-shaped metal bars. The first metal bar and the second metal bar both extend horizontally and are parallel to each other. The first metal bar and the second metal bar have the same length. The third metal bar and the fourth metal bar both extend vertically and are parallel to each other. The length of the third metal bar is less than the length of the fourth metal bar. The left end of the first metal bar is connected to the upper end of the fourth metal bar, and the right end of the first metal bar is connected to the upper end of the third metal bar. The left end of the second metal bar is connected to the middle of the fourth metal bar, and the right end of the second metal bar is connected to the lower end of the third metal bar. A notch is provided in the middle of the first metal bar.

[0029] In each transmission unit, the p-shaped metal patch 41 and the q-shaped metal patch 41 are arranged facing away from each other, i.e., the protruding portions of the two metal patches 41 face opposite directions. The center-shaped metal patch 41 is placed upside down at the center of the transmission unit, and the transmission gap formed between the three forms a double Z-shape. The third metal strip of the p-shaped metal patch 41, the third metal strip of the q-shaped metal patch 41, and the upper portion of the fifth metal strip of the center-shaped metal patch 41 are adjacent to and parallel to each other. The second metal strip of the p-shaped metal patch 41 is adjacent to and parallel to the first metal strip of the center-shaped metal patch 41. The second metal strip of the q-shaped metal patch 41 is adjacent to and parallel to the second metal strip of the center-shaped metal patch 41. The lower portion of the fourth metal strip of the p-shaped metal patch 41 is adjacent to and parallel to the sixth metal strip of the center-shaped metal patch 41. The lower portion of the fourth metal strip of the Q-shaped metal patch 41 is close to the seventh metal strip of the middle-shaped metal patch 41 and is parallel to each other.

[0030] The four graphene patches 42 are all long strips made of graphene material. The four graphene patches 42 are respectively arranged at the four gaps of the three metal patches 41, and the gaps of the metal patches 41 are closed, so that the open ring resonator composed of the metal patches 41 and the graphene patches 42 can be equivalent to an LC resonant circuit. The width of the four graphene patches 42 is equal to the width of the metal strip in which they are embedded. In a preferred embodiment of the present invention, the widths of the four graphene patches 42 are equal, both are 6μm. The lengths of the four graphene patches 42 are equal to the lengths of the gaps in the metal strip in which they are embedded. In a preferred embodiment of the present invention, the lengths of the four graphene patches 42 are exactly equal, both are 8μm, and the corresponding transmission frequency band is 0.97THz to 1.47THz, with a center frequency of 1.22THz. After the power is turned on, the Fermi energy of graphene is adjusted to increase the carrier concentration. At this time, the LC resonant circuit structure can be approximately equivalent to a resistance circuit. That is, after the voltage is applied, the current flows from one end of the graphene patch 42 to the other end through the metal patch 41, resulting in a significant decrease in the transmission peak intensity of the transmission frequency band, thereby realizing digital logic control.

[0031] The transmission peak intensity can be changed by adjusting the size of each transmission unit, including the size of the metal patch 41 and the graphene patch 42, among which the length of the sixth metal strip of the S-shaped metal patch 41, the length of the seventh metal strip of the S-shaped metal patch 41, the length of the third metal strip of the P-shaped metal patch 41, and the length of the third metal strip of the Q-shaped metal patch 41 have the greatest impact on the transmission peak intensity.

[0032] The lead-out structure is located on the outside of the surface periodic structure and consists of two electrode patches 43. Both electrode patches 43 are comb-shaped and made of metal. The first electrode patch 43 is connected to the Chinese-shaped metal patch 41 of all transmissive units, and the second electrode patch 43 is connected to all p-shaped metal patches 41 and q-shaped metal patches 41 respectively.

[0033] See also Figure 4 , the common ground electrode 1 is a closed ring made of metal material. The common ground electrode 1 can be in the shape of a circular ring, a square ring, a polygonal ring, etc. In a preferred embodiment of the present invention, the thickness of the common ground electrode 1 is 0.2 to 0.8 μm, and the common ground electrode 1 is a circular ring. The center of the common ground electrode 1 and the center of the surface periodic structure can be slightly offset in the vertical direction. However, in order to achieve uniform electrification of graphene, in a preferred embodiment of the present invention, the center of the common ground electrode 1 is perpendicular to the center of the surface periodic structure, that is, the perpendicular bisector of the common ground electrode 1 coincides with the perpendicular bisector of the entire surface periodic structure.

[0034] When in use, the terahertz wave is incident directly from directly above the encoder, that is, directly above the surface periodic structure. In order to allow the terahertz beam on the encoder to pass through unobstructed, the surface periodic structure, that is, the area covered by all the transmission units, is larger than the area of the terahertz beam spot irradiated on the encoder, which is 1.5 to 2.5 times the area of the terahertz beam spot; the area covered by the inner ring of the common ground electrode 1 is larger than the area of the terahertz beam spot irradiated on the encoder, which is 1.5 to 2.5 times the area of the terahertz beam spot. The two electrode patches 43 of the frequency control structure 4 are respectively connected to the positive pole of the DC regulated power supply via a switch, and the common ground electrode 1 is directly connected to the negative pole of the DC regulated power supply. In a preferred embodiment of the present invention, the voltage of the DC regulated power supply is 5V to 24V.

[0035] When the switch of a certain electrode patch 43 is off, the metal patches 41 of all the transmission units connected to it are powered off, and the graphene patch 42 at the gap of the metal patch 41 shows a low Fermi level. When the switch of a certain electrode patch 43 is closed, the same metal patch 41 of all the transmission units connected to it is powered on, and the graphene patch 42 at the gap of the metal patch 41 shows a high Fermi level. Based on this principle, the encoder of the present invention has the following four working states, such as Figure 5 As shown:

[0036] When the first electrode patch 43 and the second electrode patch 43 are both not energized, that is, the input of the encoder is the binary code 00, the encoder's transmittance band produces a high transmittance, and the corresponding encoder output is a digital logic 1;

[0037] When the first electrode patch 43 is energized and the second electrode patch 43 is not energized, that is, the input of the encoder is the binary code 01, the encoder's transmission band produces a low transmittance, and the corresponding encoder output is a digital logic 0;

[0038] When the first electrode patch 43 is not energized and the second electrode patch 43 is energized, that is, the input of the encoder is the binary code 10, the encoder's transmission band produces a low transmittance, and the corresponding encoder output is a digital logic 0;

[0039] When the first electrode patch 43 and the second electrode patch 43 are both powered on, that is, the input of the encoder is the binary code 11, the encoder's transmission band produces low transmittance, and the corresponding encoder output is digital logic 0.

[0040] In summary, the present invention can achieve the effect of outputting a wide-band NOR gate digital logic terahertz signal by inputting two digital electrical signals. It is suitable for different occasions, has a simple structure, and is easy to operate.

[0041] It should be noted that although the embodiments of the present invention described above are illustrative, they are not intended to limit the present invention. Therefore, the present invention is not limited to the above-mentioned specific embodiments. Without departing from the principles of the present invention, any other embodiments obtained by those skilled in the art under the guidance of the present invention are deemed to be within the protection of the present invention.

Claims

1. A terahertz metasurface NOR gate logic encoder with wide-band electrically controlled conversion, comprising an encoder body, characterized in that: The encoder body consists of a high-resistance silicon layer (2), a polyimide layer (3), a common ground electrode (1), and a frequency control structure (4); the polyimide layer (3) and the high-resistance silicon layer (2) are stacked, and the lower surface of the polyimide layer (3) is adhered to the upper surface of the high-resistance silicon layer (2); the frequency control structure (4) is stacked on the upper surface of the polyimide layer (3), and the common ground electrode (1) is stacked on the lower surface of the high-resistance silicon layer (2); The frequency control structure (4) includes a surface periodic structure and a lead-out structure; The surface periodic structure is in the middle of the frequency control structure (4) and consists of multiple transmission units arranged in a regular matrix; each transmission unit is composed of 3 metal patches (41) and 4 graphene patches (42); the 3 metal patches (41) are respectively a Chinese character-shaped metal patch (41), a p-shaped metal patch (41), and a q-shaped metal patch (41); the Chinese character-shaped metal patch (41) is Chinese character-shaped made of metal material, and 2 gaps are provided on the metal bar extending horizontally at the bottommost part thereof; the p-shaped metal patch (41) is p-shaped made of metal material, and 1 gap is provided on the metal bar extending horizontally at the uppermost part thereof; the q-shaped metal patch (41) is q-shaped made of metal material, and 1 gap is provided on the metal bar extending horizontally at the uppermost part thereof; the Chinese character-shaped metal patch (41) is located in the middle of the transmission unit, the p-shaped metal patch (41) and the q-shaped metal patch (41) are respectively located on opposite sides of the Chinese character-shaped metal patch (41), and there is a gap between the p-shaped metal patch (41) and the q-shaped metal patch (41) and the Chinese character-shaped metal patch (41); the 4 graphene patches (42) are all strip-shaped made of graphene material; the 4 graphene patches (42) are respectively arranged at the 4 gaps of the 3 metal patches (41) to close the gaps of the metal patches (41); The lead-out structure is on the relatively outer side of the surface periodic structure and consists of 2 electrode patches (43); the 2 electrode patches (43) are both comb-shaped made of metal material, the first electrode patch (43) is connected to the Chinese character-shaped metal patches (41) of all the transmission units, and the second electrode patch (43) is respectively connected to all the p-shaped metal patches (41) and q-shaped metal patches (41); The common ground electrode (1) is a closed ring made of metal material; The 2 electrode patches (43) of the frequency control structure (4) are respectively connected to the positive pole of a DC regulated power supply via 1 switch, and the common ground electrode (1) is directly connected to the negative pole of the DC regulated power supply.

2. The broadband electrically controlled terahertz metasurface NOR gate logic encoder according to claim 1, characterized in that: The center of the common ground electrode (1) is vertically opposite to the center of the surface periodic structure.

3. The broadband electrically controlled terahertz metasurface NOR gate logic encoder according to claim 1 or 2, characterized in that: The area covered by the surface periodic structure is larger than the area of the terahertz beam spot irradiated on the encoder body; the area covered by the inner ring of the common ground electrode (1) is larger than the area of the terahertz beam spot irradiated on the encoder body.

4. The broadband electrically controlled terahertz metasurface NOR gate logic encoder according to claim 3, characterized in that: The area covered by the surface periodic structure is 1.5 - 2.5 times the area of the terahertz beam spot irradiated on the encoder body, and the area covered by the inner ring of the common ground electrode (1) is 1.5 - 2.5 times the area of the terahertz beam spot irradiated on the encoder body.

5. The broadband electrically controlled terahertz metasurface NOR gate logic encoder according to claim 1, characterized in that: Each transmission unit is symmetric about its longitudinal central axis.

6. The broadband electrically controlled terahertz metasurface NOR gate logic encoder according to claim 1 or 5, characterized in that: The Chinese character-shaped metal patch (41) is composed of seven strip-shaped metal strips; The first, second, third, and fourth Chinese character-shaped metal strips all extend horizontally and are parallel to each other; the first, second, third, and fourth Chinese character-shaped metal strips have the same length; the fifth, sixth, and seventh Chinese character-shaped metal strips all extend vertically and are parallel to each other; the sixth and seventh Chinese character-shaped metal strips have the same length, and the length of the fifth Chinese character-shaped metal strip is greater than the lengths of the sixth and seventh Chinese character-shaped metal strips; The first and second Chinese character-shaped metal strips are on the same horizontal line, and the right end of the first Chinese character-shaped metal strip and the left end of the second Chinese character-shaped metal strip are connected to a point in the middle of the fifth Chinese character-shaped metal strip; the left end of the first Chinese character-shaped metal strip is connected to the upper end of the sixth Chinese character-shaped metal strip, and the right end of the second Chinese character-shaped metal strip is connected to the upper end of the seventh Chinese character-shaped metal strip; the third and fourth Chinese character-shaped metal strips are on the same horizontal line, and the right end of the third Chinese character-shaped metal strip and the left end of the fourth Chinese character-shaped metal strip are connected to a point at the lower part of the fifth Chinese character-shaped metal strip; the left end of the third Chinese character-shaped metal strip is connected to the lower end of the sixth Chinese character-shaped metal strip, and the right end of the fourth Chinese character-shaped metal strip is connected to the lower end of the seventh Chinese character-shaped metal strip; a notch is provided in the middle of each of the third and fourth Chinese character-shaped metal strips.

7. The broadband electrically controlled terahertz metasurface NOR gate logic encoder according to claim 1 or 5, characterized in that: The p-shaped metal patch (41) and the q-shaped metal patch (41) are both composed of four strip-shaped metal strips; The first and second pq-shaped metal strips both extend horizontally and are parallel to each other; the first and second pq-shaped metal strips have the same length; The third and fourth pq-shaped metal strips both extend vertically and are parallel to each other; the length of the third pq-shaped metal strip is less than the length of the fourth pq-shaped metal strip; The left end of the first pq-shaped metal strip is connected to the upper end of the fourth pq-shaped metal strip, and the right end of the first pq-shaped metal strip is connected to the upper end of the third pq-shaped metal strip; the left end of the second pq-shaped metal strip is connected to the middle of the fourth pq-shaped metal strip, and the right end of the second pq-shaped metal strip is connected to the lower end of the third pq-shaped metal strip; a notch is provided in the middle of the first pq-shaped metal strip.

8. The broadband electrically controlled terahertz metasurface NOR gate logic encoder according to claim 1, characterized in that: The lengths and widths of the four graphene patches (42) are equal.

9. The broadband electrically controlled terahertz metasurface NOR gate logic encoder according to claim 1, characterized in that: The common ground electrode (1) is circular.

10. The broadband electrically controlled terahertz metasurface NOR gate logic encoder according to claim 1, characterized in that: The voltage of the DC regulated power supply is 5V to 24V.

Images