A semiconductor laser element provided with an ion conjugate layer

Abstract

The application provides a semiconductor laser element provided with an ion conjugate layer, and relates to the technical field of semiconductor photoelectric devices, and sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer from bottom to top; the ion conjugate layer is arranged between the active layer and the upper wave layer and between the active layer and the lower waveguide layer; the ion conjugate layer can improve the molar absorption coefficient and compensate the polarization field, induce local polarization, and then regulate the carrier and Fermi level, improve the small rabbit degeneracy of the laser element, reduce the absorption loss of the free carrier, promote the stimulated radiation to exceed the spontaneous radiation, improve the particle inversion of the non-equilibrium carrier in the resonant cavity of the laser element, reduce the lasing threshold, realize the room-temperature continuous oscillation, improve the slope efficiency of the laser element, reduce the valence band step of the active layer, improve the hole injection efficiency and injection uniformity, and improve the peak gain and gain uniformity of the laser element.

Description

Technical Field

[0001] This invention relates to the field of semiconductor optoelectronic device technology, and more specifically, to a semiconductor laser element having an ion conjugated layer. Background Technology

[0002] Laser components are widely used in laser displays, laser TVs, laser projectors, communications, medical applications, weaponry, guidance, ranging, spectral analysis, cutting, precision welding, and high-density optical storage. There are many types of laser components, and they can be classified in various ways, mainly including solid-state, gas, liquid, semiconductor, and dye laser components. Compared with other types of laser components, all-solid-state semiconductor laser components have advantages such as small size, high efficiency, light weight, good stability, long lifespan, simple and compact structure, and miniaturization. Laser components differ significantly from nitride semiconductor light-emitting diodes (LEDs): 1) Lasers are generated by stimulated emission of charge carriers, resulting in a smaller spectral half-width and very high brightness; a single laser component can have an output power in the W range, while nitride semiconductor LEDs are generated by spontaneous emission, with a single LED having an output power in the mW range; 2) Laser components operate at current densities of KA / cm², more than two orders of magnitude higher than nitride LEDs, leading to stronger electron leakage, more severe Auger recombination, stronger polarization effects, and more severe electron-hole mismatch, resulting in more severe efficiency degradation and the Droop effect; 3) Light-emitting diodes... The spontaneous transition radiation of a diode is incoherent light that transitions from a high energy level to a low energy level without external influence. In contrast, laser elements emit stimulated transition radiation, where the energy of the induced photon must be equal to the energy difference between the electron transition levels to produce coherent light that is identical to the induced photon. 4) Different principles: LEDs emit light through radiative recombination when electrons and holes transition to quantum wells or pn junctions under external voltage. Laser elements, on the other hand, require certain lasing conditions to be met. These conditions include the inversion of carrier distribution in the active region, the oscillation of stimulated emission light within the resonant cavity, and the amplification of the light through propagation in the gain medium. The threshold condition must be met to ensure that the gain is greater than the loss, ultimately resulting in laser output. Nitride semiconductor laser elements have the following problems: 1) The Mg acceptor activation energy of p-type semiconductors is large and the ionization efficiency is low. The hole concentration is much lower than the electron concentration and the hole mobility is much lower than the electron mobility. In addition, the quantum well polarization electric field raises the hole injection barrier and causes hole overflow from the active layer. The non-uniformity and low efficiency of hole injection lead to severe electron-hole asymmetry mismatch in the quantum well, electron leakage and carrier delocalization, making hole transport in the quantum well more difficult. The non-uniformity of carrier injection and gain also cause the laser element gain spectrum to broaden and the peak gain to decrease, resulting in an increase in the threshold current and a decrease in the slope efficiency. 2) The symmetry breaking far from the equilibrium phase transition causes discontinuities or abrupt changes in the laser element at the threshold, such as conductance jumps, capacitance drops, junction voltage jumps, series resistance drops, and ideality factor jumps. Summary of the Invention

[0003] The purpose of this invention is to provide a semiconductor laser element with an ion conjugated layer, which solves the problems existing in the prior art.

[0004] A semiconductor laser device with an ion conjugated layer includes, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer. An ion conjugated layer is provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer.

[0005] As a preferred embodiment of the present invention, the ion conjugated layer is any two or more of BN, NaFeO3, LiCoO2, Co2O3, CoF2O4, and PbZrTiO3.

[0006] As a preferred technical solution of the present invention, any combination of the ion conjugated layers includes, but is not limited to, the following binary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, etc.: BN / NaFeO3, BN / LiCoO2, BN / Co2O3, BN / CoF2O4, BN / PbZrTiO3, NaFeO3 / LiCoO2, NaFeO3 / Co2O3, NaFeO3 / CoF2O4, NaFeO3 / PbZrTiO3, LiCoO2 / Co2O3, LiCoO2 / CoF2O4, LiCoO2 / PbZrTiO3, Co2O3 / CoF2O4, Co2O3 / PbZrTiO3, CoF2O4 / PbZrTiO3.

[0007] As a preferred technical solution of the present invention, any combination of the ion conjugated layers includes, but is not limited to, the following ternary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, etc.: BN / NaFeO3 / LiCoO2, BN / NaFeO3 / Co2O3, BN / NaFeO3 / CoF2O4, BN / NaFeO3 / PbZrTiO3, BN / LiCoO2 / Co2O3, BN / LiCoO2 / CoF2O4, BN / LiCoO2 / PbZrTiO3, BN / Co2O3 / CoF2O4, BN / Co2O3 / PbZrTiO3, BN / CoF2O4 / PbZrTiO3, NaFeO3 / LiCoO2 / Co2O3, NaFeO3 / LiCoO2 / CoF2O4, NaFeO3 / LiCoO2 / PbZrTiO3. NaFeO3 / Co2O3 / CoF2O4, NaFeO3 / Co2O3 / PbZrTiO3, NaFeO3 / CoF2O4 / PbZrTiO3, LiCoO2 / Co2O3 / CoF2O4, LiCoO2 / Co2O3 / PbZrTiO3, LiCoO2 / CoF2O4 / PbZrTiO3, Co2O3 / CoF2O4 / PbZrTiO3.

[0008] As a preferred technical solution of the present invention, any combination of the ion conjugated layers includes, but is not limited to, the following quaternary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, etc.: BN / NaFeO3 / LiCoO2 / Co2O3, BN / NaFeO3 / LiCoO2 / CoF2O4, BN / NaFeO3 / LiCoO2 / PbZrTiO3, BN / LiCoO2 / Co2O3 / CoF2O4, BN / LiCoO2 / Co2O3 / PbZrTiO3, BN / LiCoO2 / CoF2O4 / PbZrTiO3, BN / Co2O3 / CoF2O4 / PbZrTiO3, NaFeO3 / LiCoO2 / Co2O3 / CoF2O4, NaFeO3 / LiCoO2 / Co2O3 / PbZrTiO3, NaFeO3 / LiCoO2 / CoF2O4 / PbZrTiO3, LiCoO2 / Co2O3 / CoF2O4 / PbZrTiO3.

[0009] As a preferred technical solution of the present invention, any combination of the ion conjugated layers includes, but is not limited to, the following pentagonal and hexagram combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, etc.: BN / NaFeO3 / LiCoO2 / Co2O3 / CoF2O4, BN / NaFeO3 / LiCoO2 / Co2O3 / PbZrTiO3, BN / NaFeO3 / LiCoO2 / CoF2O4 / PbZrTiO3, BN / NaFeO3 / Co2O3 / CoF2O4 / PbZrTiO3, BN / NaFeO3 / Co2O3 / CoF2O4 / PbZrTiO3, BN / LiCoO2 / Co2O3 / CoF2O4 / PbZrTiO3, NaFeO3 / LiCoO2 / Co2O3 / CoF2O4 / PbZrTiO3, BN / NaFeO3 / LiCoO2 / Co2O3 / CoF2O4 / PbZrTiO3, BN / NaFeO3 / LiCoO2 / Co2O3 / CoF2O4 / PbZrTiO3, etc. 32 .

[0010] As a preferred technical solution of the present invention, an ion conjugation layer is provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer. The ion conjugation layer can improve the molar absorption coefficient, induce local polarization to regulate the carriers and Fermi level, improve particle inversion, reduce the lasing threshold, and improve the lasing power and slope efficiency of the laser element.

[0011] As a preferred embodiment of the present invention, the thickness of the ion conjugated layer is 5~500nm.

[0012] As a preferred embodiment of the present invention, the lower confinement layer, lower waveguide layer, active layer, upper waveguide layer, electron blocking layer, and upper confinement layer comprise any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP; the semiconductor laser element comprises Semiconductor deep ultraviolet lasers with emission wavelengths of 200nm~300nm, semiconductor ultraviolet lasers with emission wavelengths of 300nm~420nm, semiconductor blue lasers with emission wavelengths of 420nm~480nm, semiconductor green lasers with emission wavelengths of 500nm~550nm, semiconductor red and yellow lasers with emission wavelengths of 550nm~700nm, semiconductor infrared lasers with emission wavelengths of 800nm~1000nm, and semiconductor far-infrared lasers with emission wavelengths of 1000nm~1600nm.

[0013] As a preferred embodiment of the present invention, the substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, and sapphire / SiN composite substrate. x Composite substrate, sapphire / SiO2 / SiN x Any one of the following: composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, or LiAlO2 / LiGaO2 composite substrate.

[0014] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0015] In the solution of the present invention:

[0016] Compared to existing technologies, ion conjugation layers are provided between the active layer and the upper waveguide layer, and between the active layer and the lower waveguide layer. These ion conjugation layers can improve the molar absorption coefficient and compensate for the polarization field, induce local polarization, and thus modulate the carriers and Fermi level. This improves the photon degeneracy of the laser element, reduces the absorption loss of free carriers, promotes stimulated emission to exceed spontaneous emission, improves the particle inversion of non-equilibrium carriers in the resonant cavity of the laser element, lowers the lasing threshold, achieves continuous oscillation at room temperature, improves the slope efficiency of the laser element, and reduces the valence band order of the active layer, improving hole injection efficiency and injection uniformity, and enhancing the peak gain and gain uniformity of the laser element. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of a semiconductor laser element with an ion conjugated layer provided by the present invention.

[0018] The image shows:

[0019] 100: Substrate; 101: Lower confinement layer; 102: Lower waveguide layer; 103: Active layer; 104: Upper waveguide layer; 105: Electron blocking layer; 106: Upper confinement layer; 107: Ion conjugated layer. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0021] Therefore, the following detailed description of embodiments of the present invention is not intended to limit the scope of the claimed invention, but merely illustrates some embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.

[0022] It should be noted that, unless otherwise specified, the embodiments and features and technical solutions in the present invention can be combined with each other.

[0023] Example 1

[0024] Please see Figure 1 This embodiment provides a technical solution: a semiconductor laser element with an ion conjugation layer, which, from bottom to top, includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. An ion conjugation layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0025] The ion conjugated layer 107 is any two or more of BN, NaFeO3, LiCoO2, Co2O3, CoF2O4, and PbZrTiO3.

[0026] An ion conjugation layer is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102. The ion conjugation layer can improve the molar absorption coefficient and compensate the polarization field, induce local polarization and thus regulate the carriers and Fermi level, improve the photon degeneracy of the laser element, reduce the absorption loss of free carriers, promote stimulated emission to exceed spontaneous emission, improve the particle inversion of non-equilibrium carriers in the resonant cavity of the laser element, reduce the lasing threshold, realize continuous oscillation at room temperature, improve the slope efficiency of the laser element, reduce the valence band order of the active layer, improve the hole injection efficiency and injection uniformity, and improve the peak gain and gain uniformity of the laser element.

[0027] The lower confinement layer 101, lower waveguide layer 102, active layer 103, upper waveguide layer 104, electron blocking layer 105, and upper confinement layer 106 include any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0028] The substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, and sapphire / SiN composite substrate. x Composite substrate, sapphire / SiO2 / SiN x Any one of the following: composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, or LiAlO2 / LiGaO2 composite substrate.

[0029] Example 2

[0030] Please see Figure 1 This embodiment provides a technical solution: a semiconductor laser element with an ion conjugation layer, which includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. An ion conjugation layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0031] An ion conjugation layer is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102. The ion conjugation layer can improve the molar absorption coefficient and compensate the polarization field, induce local polarization and thus regulate the carriers and Fermi level, improve the photon degeneracy of the laser element, reduce the absorption loss of free carriers, promote stimulated emission to exceed spontaneous emission, improve the particle inversion of non-equilibrium carriers in the resonant cavity of the laser element, reduce the lasing threshold, realize continuous oscillation at room temperature, improve the slope efficiency of the laser element, reduce the valence band order of the active layer, improve the hole injection efficiency and injection uniformity, and improve the peak gain and gain uniformity of the laser element.

[0032] Any combination of the ion conjugated layers includes, but is not limited to, the following binary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, etc.: BN / NaFeO3, BN / LiCoO2, BN / Co2O3, BN / CoF2O4, BN / PbZrTiO3, NaFeO3 / LiCoO2, NaFeO3 / Co2O3, NaFeO3 / CoF2O4, NaFeO3 / PbZrTiO3, LiCoO2 / Co2O3, LiCoO2 / CoF2O4, LiCoO2 / PbZrTiO3, Co2O3 / CoF2O4, Co2O3 / PbZrTiO3, CoF2O4 / PbZrTiO3.

[0033] The lower confinement layer 101, lower waveguide layer 102, active layer 103, upper waveguide layer 104, electron blocking layer 105, and upper confinement layer 106 include any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0034] The substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, and sapphire / SiN composite substrate. x Composite substrate, sapphire / SiO2 / SiN x Any one of the following: composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, or LiAlO2 / LiGaO2 composite substrate.

[0035] Example 3

[0036] Please see Figure 1 This embodiment provides a technical solution: a semiconductor laser element with an ion conjugation layer, which includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. An ion conjugation layer is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0037] An ion conjugation layer is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102. The ion conjugation layer can improve the molar absorption coefficient and compensate the polarization field, induce local polarization and thus regulate the carriers and Fermi level, improve the photon degeneracy of the laser element, reduce the absorption loss of free carriers, promote stimulated emission to exceed spontaneous emission, improve the particle inversion of non-equilibrium carriers in the resonant cavity of the laser element, reduce the lasing threshold, realize continuous oscillation at room temperature, improve the slope efficiency of the laser element, reduce the valence band order of the active layer, improve the hole injection efficiency and injection uniformity, and improve the peak gain and gain uniformity of the laser element.

[0038] Any combination of the ion-conjugated layer 107 includes, but is not limited to, the following ternary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, etc.: BN / NaFeO3 / LiCoO2, BN / NaFeO3 / Co2O3, BN / NaFeO3 / CoF2O4, BN / NaFeO3 / PbZrTiO3, BN / LiCoO2 / Co2O3, BN / LiCoO2 / CoF2O4, BN / LiCoO2 / PbZrTiO3, BN / Co2O3 / CoF2O4, BN / Co2O3 / PbZrTiO3, BN / CoF2O4 / PbZrTiO3, NaFeO3 / LiCoO2 / Co2O3, NaFeO3 / LiCoO2 / CoF2O4, NaFeO3 / LiCoO2 / PbZrTiO3. NaFeO3 / Co2O3 / CoF2O4, NaFeO3 / Co2O3 / PbZrTiO3, NaFeO3 / CoF2O4 / PbZrTiO3, LiCoO2 / Co2O3 / CoF2O4,LiCoO2 / Co2O3 / PbZrTiO3, LiCoO2 / CoF2O4 / PbZrTiO3, Co2O3 / CoF2O4 / PbZrTiO3.

[0039] The lower confinement layer 101, lower waveguide layer 102, active layer 103, upper waveguide layer 104, electron blocking layer 105, and upper confinement layer 106 include any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0040] The substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, and sapphire / SiN composite substrate. x Composite substrate, sapphire / SiO2 / SiN x Any one of the following: composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, or LiAlO2 / LiGaO2 composite substrate.

[0041] Example 4

[0042] Please see Figure 1This embodiment provides a technical solution: a semiconductor laser element with an ion conjugation layer, which includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. An ion conjugation layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0043] An ion conjugation layer is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102. The ion conjugation layer can improve the molar absorption coefficient and compensate the polarization field, induce local polarization and thus regulate the carriers and Fermi level, improve the photon degeneracy of the laser element, reduce the absorption loss of free carriers, promote stimulated emission to exceed spontaneous emission, improve the particle inversion of non-equilibrium carriers in the resonant cavity of the laser element, reduce the lasing threshold, realize continuous oscillation at room temperature, improve the slope efficiency of the laser element, reduce the valence band order of the active layer, improve the hole injection efficiency and injection uniformity, and improve the peak gain and gain uniformity of the laser element.

[0044] Any combination of the ion-conjugated layer 107 includes, but is not limited to, the following quaternary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, etc.: BN / NaFeO3 / LiCoO2 / Co2O3, BN / NaFeO3 / LiCoO2 / CoF2O4, BN / NaFeO3 / LiCoO2 / PbZrTiO3, BN / LiCoO2 / Co2O3 / CoF2O4, BN / LiCoO2 / Co2O3 / PbZrTiO3, BN / LiCoO2 / CoF2O4 / PbZrTiO3, BN / Co2O3 / CoF2O4 / PbZrTiO3, NaFeO3 / LiCoO2 / Co2O3 / CoF2O4, NaFeO3 / LiCoO2 / Co2O3 / PbZrTiO3, NaFeO3 / LiCoO2 / CoF2O4 / PbZrTiO3,LiCoO2 / Co2O3 / CoF2O4 / PbZrTiO3.

[0045] Example 5

[0046] Please see Figure 1This embodiment provides a technical solution: a semiconductor laser element with an ion conjugation layer, which includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. An ion conjugation layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0047] An ion conjugation layer is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102. The ion conjugation layer can improve the molar absorption coefficient and compensate the polarization field, induce local polarization and thus regulate the carriers and Fermi level, improve the photon degeneracy of the laser element, reduce the absorption loss of free carriers, promote stimulated emission to exceed spontaneous emission, improve the particle inversion of non-equilibrium carriers in the resonant cavity of the laser element, reduce the lasing threshold, realize continuous oscillation at room temperature, improve the slope efficiency of the laser element, reduce the valence band order of the active layer, improve the hole injection efficiency and injection uniformity, and improve the peak gain and gain uniformity of the laser element.

[0048] Any combination of the ion-conjugated layer 107 includes, but is not limited to, the following pentagonal and hexagram combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, etc.: BN / NaFeO3 / LiCoO2 / Co2O3 / CoF2O4, BN / NaFeO3 / LiCoO2 / Co2O3 / PbZrTiO3, BN / NaFeO3 / LiCoO2 / CoF2O4 / PbZrTiO3, BN / NaFeO3 / Co2O3 / CoF2O4 / PbZrTiO3, BN / LiCoO2 / Co2O3 / CoF2O4 / PbZrTiO3, NaFeO3 / LiCoO2 / Co2O3 / CoF2O4 / PbZrTiO3, BN / NaFeO3 / LiCoO2 / Co2O3 / CoF2O4 / PbZrTiO3, BN / NaFeO3 / LiCoO2 / Co2O3 / CoF2O4 / PbZrTiO3. 32 .

[0049] The lower confinement layer 101, lower waveguide layer 102, active layer 103, upper waveguide layer 104, electron blocking layer 105, and upper confinement layer 106 include any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0050] The substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, and sapphire / SiN composite substrate. x Composite substrate, sapphire / SiO2 / SiN x Any one of the following: composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, or LiAlO2 / LiGaO2 composite substrate.

[0051] Experimental Example 1:

[0052] The green laser experiment was conducted using the technical solution in Example 1, with BN used as the ion conjugated layer in the experiment.

[0053] Experimental Example 2:

[0054] The green laser experiment was conducted using the technical solution in Example 2, with the ion conjugated layer being BN / NaFeO3.

[0055] Experimental Example 3:

[0056] The green laser experiment was conducted using the technical solution in Example 3, with the ion conjugated layer being BN / NaFeO3 / LiCoO2.

[0057] Experiment Example 4:

[0058] The green laser experiment was conducted using the technical solution in Example 4, and the ion conjugated layer was BN / NaFeO3 / LiCoO2 / Co2O3.

[0059] Experimental Example 5:

[0060] The green laser experiment was conducted using the technical solution in Example 5, and the ion conjugated layer was BN / NaFeO3 / LiCoO2 / Co2O3 / CoF2O4.

[0061] The data for Experiments 1-5 are as follows:

[0062]

[0063] The average values ​​of the data in Experiments 1-5 are compared with those of traditional laser elements as follows:

[0064]

[0065] The slope efficiency of the green laser element increased from 0.78 W / A to 1.23 W / A, an improvement of 58%; the threshold current density increased from 1.46 kA / cm².2 Reduced to 0.84 A / cm 2 The optical power was increased from 0.69W to 1.21W.

[0066] Compared to existing technologies, ion conjugation layers are provided between the active layer and the upper waveguide layer, and between the active layer and the lower waveguide layer. These ion conjugation layers can improve the molar absorption coefficient and compensate for the polarization field, inducing local polarization and thus modulating carriers and the Fermi level. This improves the photon degeneracy of the laser element, reduces the absorption loss of free carriers, promotes stimulated emission exceeding spontaneous emission, improves particle inversion of non-equilibrium carriers in the resonant cavity of the laser element, lowers the lasing threshold, achieves continuous oscillation at room temperature, improves the slope efficiency of the laser element, and reduces the valence band order of the active layer, improving hole injection efficiency and injection uniformity, and enhancing the peak gain and gain uniformity of the laser element. The above embodiments are merely illustrative of the invention and are not intended to limit the technical solutions described herein. Although this specification has described the invention in detail with reference to the various embodiments described above, the invention is not limited to the specific implementation methods described. Therefore, any modifications or equivalent substitutions to the invention, and all technical solutions and improvements that do not depart from the spirit and scope of the invention, are covered within the scope of the claims of this invention.

Claims

1. A nitride semiconductor laser element having an ion conjugated layer, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105), and an upper confinement layer (106), characterized in that: An ion conjugated layer (107) is provided between the active layer (103) and the upper waveguide layer (104) and between the active layer (103) and the lower waveguide layer (102); The ion conjugated layer (107) can improve the molar absorption coefficient and compensate the polarization field, induce local polarization and thus regulate the carriers and Fermi level, improve the photon degeneracy of the laser element, reduce the absorption loss of free carriers, promote stimulated emission to exceed spontaneous emission, improve the particle reversal of non-equilibrium carriers in the resonant cavity of the laser element, reduce the lasing threshold, realize continuous oscillation at room temperature, improve the slope efficiency of the laser element, reduce the valence band order of the active layer, improve the hole injection efficiency and injection uniformity, and improve the peak gain and gain uniformity of the laser element.

2. A nitride semiconductor laser element with an ion conjugated layer as described in claim 1, characterized in that, The thickness of the ion conjugated layer (107) is 5~500 nm.

3. A nitride semiconductor laser element with an ion conjugated layer as described in claim 1, characterized in that, The lower confinement layer (101), lower waveguide layer (102), active layer (103), upper waveguide layer (104), electron blocking layer (105), and upper confinement layer (106) include any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP; the semiconductor... The conductor laser element includes semiconductor deep ultraviolet lasers with emission wavelengths of 200nm~300nm, semiconductor ultraviolet lasers with emission wavelengths of 300nm~420nm, semiconductor blue lasers with emission wavelengths of 420nm~480nm, semiconductor green lasers with emission wavelengths of 500nm~550nm, semiconductor red and yellow lasers with emission wavelengths of 550nm~700nm, semiconductor infrared lasers with emission wavelengths of 800nm~1000nm, and semiconductor far-infrared lasers with emission wavelengths of 1000nm~1600nm.

4. A nitride semiconductor laser element with an ion-conjugated layer as described in claim 1, characterized in that, The substrate (100) includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, and sapphire / SiN composite substrate. x Composite substrate, sapphire / SiO2 / SiN x The composite substrate, any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, or LiAlO2 / LiGaO2 composite substrate.

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