A pixel structure and its fabrication method, and an infrared detector

Abstract

This application relates to a pixel structure and its fabrication method, and an infrared detector. The pixel structure includes a substrate and a conversion element. The conversion element converts optical signals into electrical signals. The conversion element includes a conversion body and a conversion support structure disposed on the substrate and capable of supporting the conversion element. Along the thickness direction of the pixel structure, the conversion body and the substrate are spaced apart. A first antistatic layer is provided on the surface of the conversion body facing the substrate. By providing a first antistatic layer opposite to and spaced from the substrate on the surface of the conversion body facing the substrate, the pixel structure reduces the accumulation of electrostatic charge on the lower surface of the conversion element, effectively enhancing the antistatic capability of the detector pixel-level structure and reducing the generation of electrostatic defects during detector operation.

Description

Technical Field

[0001] This application relates to the field of MEMS device technology, and in particular to a pixel structure and its fabrication method, and an infrared detector. Background Technology

[0002] MEMS devices, such as infrared detectors, typically consist of a support structure and a thermistor. Commonly used support structure materials (such as silicon nitride) have a high dielectric constant and a strong ability to retain charge. During manufacturing, transportation, and operation, the detector structure continuously accumulates electrostatic charge, which affects the performance of the infrared detector. Summary of the Invention

[0003] This application provides a cell structure, which includes:

[0004] Base;

[0005] A conversion element is used to convert optical signals into electrical signals. The conversion element includes a conversion body and a conversion support structure disposed on the substrate and capable of supporting the conversion element. The conversion body and the substrate are spaced apart along the thickness direction of the pixel structure. A first antistatic layer is provided on the surface of the conversion body facing the substrate.

[0006] In some embodiments, the conversion body includes a support and protective layer disposed on the side of the first antistatic layer away from the substrate, and a heat-sensitive layer disposed on the side of the support and protective layer away from the substrate.

[0007] In some embodiments, the dielectric constant of the first antistatic layer is less than the dielectric constant of the supporting protective layer.

[0008] In some embodiments, the surface of the conversion body facing away from the substrate is provided with a second antistatic layer.

[0009] In some embodiments, the cell structure further includes:

[0010] An enhancement element is disposed on the side of the conversion element away from the substrate; the enhancement element includes an enhancement body for absorbing light signals, and the enhancement body is spaced apart from the conversion element along the thickness direction of the pixel structure; wherein the enhancement body has a surface away from the conversion element and a surface facing the conversion element, and at least one of the two surfaces is provided with a third antistatic layer.

[0011] In some embodiments, the enhancement body includes an enhancement metal layer for enhancing the absorption of light signals, and a first antioxidant layer and a second antioxidant layer respectively disposed on the surface of the enhancement metal layer facing the conversion element and on the surface facing away from the conversion element, and the third antistatic layer is disposed on the surface of at least one of the first antioxidant layer and the second antioxidant layer.

[0012] In some embodiments, the enhancement body includes an enhancement metal layer for enhancing the absorption of optical signals, the enhancement metal layer having a surface facing away from the conversion element and a surface facing the conversion element, and at least one of the two surfaces having a third antistatic layer.

[0013] In some embodiments, the first antistatic layer is a silicon dioxide film, an aluminum oxide film, or a zinc oxide film; and / or,

[0014] The third antistatic layer is a silicon dioxide film, an aluminum oxide film, or a zinc oxide film; and / or,

[0015] The surface of the conversion body away from the substrate is provided with a second antistatic layer, wherein the second antistatic layer is a silicon dioxide film layer, an aluminum oxide film layer, or a zinc oxide film layer.

[0016] In some embodiments, the surface of the conversion body away from the substrate is not provided with a second antistatic layer, the first antistatic layer and the third antistatic layer are made of the same material, or the difference in dielectric constant between the first antistatic layer and the third antistatic layer is less than or equal to 5.

[0017] The surface of the conversion body away from the substrate is provided with a second antistatic layer, wherein the first antistatic layer, the second antistatic layer and the third antistatic layer are made of the same material, or the difference in dielectric constant between any two of the first antistatic layer, the second antistatic layer and the third antistatic layer is less than or equal to 5.

[0018] This application also provides an infrared detector, which includes the pixel structure described above.

[0019] This application also provides a method for preparing a pixel structure, which includes:

[0020] Provide a base;

[0021] A first sacrificial layer is disposed on the substrate;

[0022] A conversion element is formed, which is used to convert optical signals into electrical signals. The conversion element includes a conversion body disposed on the first sacrificial layer and a conversion support structure penetrating the first sacrificial layer. The conversion support structure is disposed on the substrate and can support the conversion element. The side of the conversion body facing the first sacrificial layer is a first antistatic layer.

[0023] The first sacrificial layer is removed to form a pixel structure; wherein, along the thickness direction of the pixel structure, the conversion body and the substrate are spaced apart, and the surface of the conversion body facing the substrate is provided with a first antistatic layer.

[0024] In some embodiments, the forming conversion element includes:

[0025] A first antistatic layer is disposed on top of the first sacrificial layer;

[0026] A support and protective layer is provided on the side of the first antistatic layer that is away from the first sacrificial layer;

[0027] A heat-sensitive layer is provided on the side of the support protective layer that is away from the first sacrificial layer.

[0028] In some embodiments, after a heat-sensitive layer is formed on the side of the support protective layer opposite to the first sacrificial layer, the formation of the conversion element includes:

[0029] A second antistatic layer is provided on the side of the heat-sensitive layer opposite to the substrate.

[0030] In some embodiments, after forming the conversion element and before removing the first sacrificial layer, the method further includes:

[0031] An enhancement element is formed on the side of the conversion element away from the substrate; the enhancement element includes an enhancement body for absorbing light signals, and the enhancement body is spaced apart from the conversion element along the thickness direction of the pixel structure; wherein the enhancement body has a surface away from the conversion element and a surface facing the conversion element, and at least one of the two surfaces is provided with a third antistatic layer.

[0032] In some embodiments, the enhancement body includes an enhancement metal layer for enhancing the absorption of optical signals, and a first antioxidant layer and a second antioxidant layer respectively disposed on the surface of the enhancement metal layer facing the conversion element and on the surface facing away from the conversion element, wherein forming the enhancement element includes:

[0033] Form the first antioxidant layer;

[0034] A reinforcing metal layer is formed on the side of the first antioxidant layer opposite to the conversion element;

[0035] A second antioxidant layer is formed on one side of the reinforcing metal layer;

[0036] Specifically, a third antistatic layer is formed before the formation of the first antioxidant layer and / or after the formation of the second antioxidant layer, the third antistatic layer being located on the surface of at least one of the first antioxidant layer and the second antioxidant layer.

[0037] In some embodiments, the enhancement body includes an enhancement metal layer for enhancing the absorption of optical signals, and the formation of the enhancement element includes:

[0038] A reinforcing metal layer is formed, and a third antistatic layer is provided on at least one of the two surfaces of the reinforcing metal layer, one facing away from the conversion element and the other facing the conversion element.

[0039] The pixel structure and its fabrication method, as well as the infrared detector provided in this application embodiment, can reduce the accumulation of electrostatic charge on the lower surface of the conversion element by providing a first antistatic layer that is opposite to and spaced from the substrate on the surface of the conversion body facing the substrate, thereby effectively enhancing the antistatic capability of the detector pixel-level structure and reducing the generation of electrostatic defects during detector operation.

[0040] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit the invention. Attached Figure Description

[0041] To more clearly illustrate the technical solutions in the embodiments or related technologies of this application, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0042] Figure 1 A cross-sectional view of a pixel structure provided in an embodiment of this application;

[0043] Figure 2 A cross-sectional view of another pixel structure provided in an embodiment of this application;

[0044] Figure 3 A cross-sectional view of another pixel structure provided in an embodiment of this application;

[0045] Figure 4 A cross-sectional view of yet another pixel structure provided in an embodiment of this application;

[0046] Figure 5 This is a flowchart illustrating a method for preparing a pixel structure according to an embodiment of this application.

[0047] Figures 6 to 16 A manufacturing process diagram of a pixel structure provided in one embodiment of this application;

[0048] Figures 17 to 20 This is a partial manufacturing process diagram of another pixel structure provided in one embodiment of this application. Detailed Implementation

[0049] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.

[0050] This application provides a pixel structure and its fabrication method, as well as an infrared detector. The pixel structure includes a substrate and a conversion element. The conversion element converts optical signals into electrical signals. The conversion element includes a conversion body and a conversion support structure disposed on the substrate and capable of supporting the conversion element. Along the thickness direction of the pixel structure, the conversion body and the substrate are spaced apart. A first antistatic layer is provided on the surface of the conversion body facing the substrate. By providing a first antistatic layer opposite to and spaced from the substrate on the surface of the conversion body facing the substrate, the pixel structure can reduce the accumulation of electrostatic charge on the lower surface of the conversion element, effectively enhancing the antistatic capability of the detector pixel-level structure and reducing the generation of electrostatic defects during detector operation.

[0051] The following is in conjunction with the appendix Figures 1 to 20 The pixel structure, its fabrication method, and the infrared detector provided in this application are described in detail.

[0052] Please combine Figure 1 As shown, the pixel structure 100 includes a substrate 103 and a conversion element 101.

[0053] The substrate 103 includes a substrate body 1, a passivation layer 2 disposed on the upper surface of the substrate body 1, and an electrode layer 13 for connecting the readout circuit.

[0054] The substrate body 1 can be a substrate structure formed of silicon, germanium or other materials.

[0055] The substrate body 1 may also integrate a readout circuit. The readout circuit is electrically connected to the conversion element 101 through the electrode layer 13. The readout circuit is used to receive the electrical signal generated by the conversion element 101 and process it to realize the infrared detection function of the infrared detector. Of course, in other embodiments, the pixel structure 100 can also be used to detect light signals of other wavelengths. It should be noted that the light signal in this embodiment is infrared light radiation.

[0056] The passivation layer 2 can be formed using materials such as silicon dioxide (SiO2). This passivation layer 2 can cover the sidewalls of the electrode layer 13 to protect it. It is understood that in some other embodiments, the electrode layer 13 may also be embedded within the substrate body 1, and a passivation layer may not be required.

[0057] The conversion element 101 includes a conversion body 1011 and a conversion support structure 1012 disposed on the substrate 103 and capable of supporting the conversion element 101. The conversion body 1011 and the substrate 103 are spaced apart along the thickness direction of the pixel structure 100. The conversion element 101 is used to convert optical signals into electrical signals. Specifically, the conversion element 101 can receive optical signals and generate corresponding electrical signals. A first antistatic layer 4 is provided on the surface of the conversion body 1011 facing the substrate 103, and the first antistatic layer 4 is opposite to the substrate 103.

[0058] The first electrostatic layer 4 can be made of a material with a dielectric constant of less than 9.7.

[0059] In some embodiments, the first antistatic layer 4 may be made of at least one material with a low dielectric constant selected from silicon dioxide (SiO2), aluminum oxide (Al2O3), zinc oxide (ZnO), or other similar materials. Accordingly, the first antistatic layer 4 is a silicon dioxide film (SiO2), an aluminum oxide film (Al2O3), or a zinc oxide (ZnO) film, etc. Of course, it may also be a mixed material film formed from two or more of the aforementioned materials with low dielectric constants.

[0060] The first antistatic layer 4 has a low dielectric constant, which can effectively reduce the accumulation of electrostatic charge on the lower surface of the conversion element 101, especially the conversion body 1011.

[0061] In some embodiments, the conversion body 1011 includes a support and protective layer 51 disposed on the side of the first antistatic layer 4 away from the substrate 103, and a heat-sensitive layer 6 disposed on the side of the support and protective layer 51 away from the substrate 103.

[0062] Here, the support and protective layer 51 can be formed using materials such as silicon nitride (SiNx). This support and protective layer 51 is located below the heat-sensitive layer 6 and can also be used to support the heat-sensitive layer 6 and other structural layers thereon.

[0063] Generally, the dielectric constant of silicon nitride (SiNx) material is 9.7.

[0064] The dielectric constant of the first antistatic layer 4 is smaller than that of the supporting protective layer 51, which can effectively reduce the accumulation of electrostatic charge on the lower surface of the conversion element 101, especially the conversion body 1011.

[0065] Preferably, where conditions permit, the material of the first antistatic layer 4 can be selected as a material with a small or minimal electrostatic constant, such as silicon dioxide (SiO2), so that the dielectric constant of the first antistatic layer is much smaller than that of the supporting protective layer 51, so as to better reduce the accumulation of electrostatic charge on the lower surface of the conversion element 101, especially the conversion body 1011.

[0066] Please continue to refer to Figure 1 As shown, the conversion body 1011 may further include a support and protective layer 52, a conductive layer 7, and a support and protective layer 53 located on the heat-sensitive layer 6. The conductive layer 7 is connected to the electrode layer 13 and the heat-sensitive layer 6 of the substrate 103 to maintain signal transmission.

[0067] Here, the conductive layer 7 can be formed using conductive materials such as aluminum or titanium.

[0068] like Figure 1 As shown, the support protective layer 52, the conductive layer 7, and the support protective layer 53 can extend outward and downward to form a conversion support structure 1012. The bottom end of the conductive layer 7 passes through the support protective layer 52 and contacts the electrode layer 13.

[0069] Please continue to refer to Figure 1 As shown, in some embodiments, the conversion support structure 1012 is connected to the outer edge of the conversion body 1011. The pixel structure 100 may also include a connecting arm 1013 on the same layer as the conversion body 1011, and the conversion body 1011 is connected to the upper end of the conversion support structure 1012 via the connecting arm 1013. The surface of the connecting arm 1013 facing the substrate is also provided with a corresponding antistatic layer. This antistatic layer can be formed simultaneously with the first antistatic layer 4 (i.e., in the same process).

[0070] Optionally, the connecting arm 1013 can be formed after the corresponding film layers are formed with the conversion body 1011, by patterning the corresponding film layers on the outer edge of the conversion body 1011 through processes such as etching.

[0071] Please refer to Figure 2As shown, this application also provides a pixel structure 200. In addition to the structures included in pixel structure 100, pixel structure 200 also includes a second antistatic layer 12. The second antistatic layer 12 is disposed on the surface of the conversion body 1011 facing away from the substrate 103.

[0072] Compared to the aforementioned pixel structure 100, the provision of the second antistatic layer 12 in this pixel structure 200 helps to reduce the accumulation of electrostatic charge on the surface of the conversion body 1011 away from the substrate 103, and further improves the antistatic capability of the pixel structure.

[0073] The second antistatic layer 12 can be made of at least one material with a low dielectric constant, such as silicon dioxide (SiO2), aluminum oxide (Al2O3), zinc oxide (ZnO), or other similar materials. Correspondingly, the first antistatic layer 4 is a silicon dioxide film (SiO2), an aluminum oxide film (Al2O3), or a zinc oxide (ZnO) film, etc. Of course, it can also be a mixed material film formed by two or more of the aforementioned materials with low dielectric constants.

[0074] Preferably, where conditions permit, the material of the second antistatic layer 12 can be selected as a material with a small or minimal electrostatic constant, such as silicon dioxide (SiO2), in order to better reduce the accumulation of electrostatic charge on the upper surface of the conversion element 101.

[0075] Preferably, the material of the second antistatic layer 12 and the material of the first antistatic layer 4 can be the same material with the same dielectric constant, such as silicon dioxide (SiO2), which can better reduce the accumulation of electrostatic charge on the surface of the conversion element 101.

[0076] Of course, if the material of the second antistatic layer 12 is different from that of the first antistatic layer 4, and the dielectric constant of the second antistatic layer 12 is within 5 (i.e. less than or equal to 5), it can well guarantee the antistatic capability of the pixel structure 200.

[0077] It is understood that in some embodiments, the surface of the connecting arm 1013 facing away from the substrate 103 is also provided with a corresponding antistatic layer. This antistatic layer can be formed simultaneously with the second antistatic layer 12 (i.e., in the same process). Of course, in other embodiments, the surface of the connecting arm 1013 facing away from the substrate 103 may not be provided with an antistatic layer.

[0078] Please refer to Figure 3 As shown, this application also provides a pixel structure 300. In addition to the structures included in pixel structure 100, pixel structure 300 also includes reinforcing element 102.

[0079] An enhancement element 102 is disposed on the side of the conversion element 101 away from the substrate 103. The enhancement element 102 includes an enhancement body 1021 for absorbing light signals. Along the thickness direction of the pixel structure, the enhancement body 1021 is spaced apart from the conversion element 101. A third antistatic layer 11 is provided on the surface of the enhancement body 1021 facing away from the conversion element 101.

[0080] In some embodiments, the third antistatic layer 11 may be made of at least one material with a low dielectric constant selected from silicon dioxide (SiO2), aluminum oxide (Al2O3), zinc oxide (ZnO), or other similar materials. Accordingly, the third antistatic layer 11 is a silicon dioxide (SiO2) film, an aluminum oxide (Al2O3) film, or a zinc oxide (ZnO) film, etc. Of course, it may also be a mixed material film formed from two or more of the aforementioned materials with low dielectric constants.

[0081] It is understood that in other embodiments, a third antistatic layer may also be provided on the surface of the reinforcing body 1021 facing the conversion element 101, or only the surface of the reinforcing body 1021 facing the conversion element 101 may be provided with a third antistatic layer, or neither of the corresponding two surfaces of the reinforcing element 102 may be provided with a third antistatic layer.

[0082] It is understandable that the pixel structure 300 is a two-layer structure with a conversion element 101 and a reinforcing element 102. Besides the potential difference between the conversion body 1011 and the substrate 103, if the materials of the first antistatic layer 4 of the reinforcing element and the conversion element 101 are different, or if their dielectric constants differ significantly, the accumulated charge will differ, creating a potential difference between the reinforcing element 102 and the conversion element 101 (especially between their main bodies), further increasing the electrostatic force on the pixel structure. Therefore, the material of the third antistatic layer 11 is the same as or has a similar dielectric constant to the first antistatic layer 4, to further enhance the antistatic capability of the two-layer structure.

[0083] For example, in some embodiments, the material of the third antistatic layer 11 has a dielectric constant that differs from that of the first antistatic layer 4 by less than 5 (i.e., less than or equal to 5), which can well ensure the antistatic capability of the double-layer structure.

[0084] Understandably, when conditions permit, the smaller the difference in dielectric constant between the material of the third antistatic layer 11 and the first antistatic layer 4, the better. For example, the material of the third antistatic layer 11 and the first antistatic layer 4 can be the same material with the same dielectric constant, such as silicon dioxide (SiO2).

[0085] like Figure 3As shown, in some embodiments, the enhancement body 1021 includes an enhancement metal layer 10 for enhancing the absorption of light signals, and anti-oxidation layers 9 respectively disposed on two opposite surfaces of the enhancement metal layer 10. Specifically, the anti-oxidation layer 9 may include a first anti-oxidation layer 91 disposed on the surface of the enhancement metal layer 10 facing the conversion element 101 and a second anti-oxidation layer 92 disposed on the surface of the second anti-oxidation layer 92 facing away from the conversion element 101, and the third antistatic layer 11 disposed on the surface of the second anti-oxidation layer 92 facing away from the substrate 103.

[0086] The reinforcing metal layer 10 can be a metal layer formed of titanium. The anti-oxidation layer 9 can be a material layer formed of silicon nitride or similar materials, which has a certain structural strength to support the reinforcing metal layer 10.

[0087] The reinforcing element 102 also includes a reinforcing support structure 1022 for supporting the reinforcing body 1021. The reinforcing support structure 1022 may be located below the middle of the reinforcing body 1021, and its bottom may be supported on the conversion element 101, so that the reinforcing element 102 as a whole forms an umbrella-shaped structure.

[0088] It is understood that the reinforcing support structure 1022 can be formed simultaneously with the reinforcing body 1021, and may include the same membrane layer as the reinforcing body 1021. Of course, it may also not include the same membrane layer.

[0089] Of course, in some other embodiments, the reinforcing support structure may also be located in other places, such as below the edge region of the reinforcing body.

[0090] Should Figure 3 In the embodiment shown, the third antistatic layer 11 is disposed on the surface of the reinforcing element 102 on the side opposite to the conversion element 101, which can better enhance the antistatic capability of the pixel structure 300.

[0091] Accordingly, for cases where the third antistatic layer is located in other positions, it can be disposed on the surface of the corresponding anti-oxidation layer. For cases where no third antistatic layer is disposed, the reinforcing element may include a reinforcing metal layer and anti-oxidation layers disposed on opposite surfaces of the reinforcing metal layer.

[0092] Please refer to Figure 4 As shown, this application also provides a pixel structure 400. This pixel structure 400 is substantially the same as the pixel structure 300 described above, except that the enhancement body 1021 includes an enhancement metal layer 10 for enhancing the absorption of light signals, and the surface of the enhancement metal layer 10 facing away from the conversion element 101 is provided with a third antistatic layer 11.

[0093] Of course, in some other embodiments, the third antistatic layer may be directly provided on the surface of the reinforcing body facing the conversion element 101, or the third antistatic layer may be provided only on the surface of the reinforcing body facing the conversion element 101.

[0094] It should be noted that, for the two-layer pixel structure having a conversion element 101 and a reinforcing element 102, in addition to the pixel structures 300, 400, or similar pixel structures described above, a pixel structure in which a second antistatic layer is provided on the surface of the conversion element 101 facing away from the substrate 103 can also be provided. This second antistatic layer is the same as or similar to the second antistatic layer 12 in the pixel structure 200. For a detailed description, please refer to the relevant descriptions above.

[0095] It should be further explained that, in this embodiment, preferably, the material of the second antistatic layer 12 and the materials of the first antistatic layer 4 and the third antistatic layer 11 can be the same material with the same dielectric constant, such as silicon dioxide (SiO2), which can better reduce the accumulation of electrostatic charge in the pixel structure.

[0096] Of course, if the material of the second antistatic layer 12 is different from that of the first antistatic layer 4 and the third antistatic layer 11, the dielectric constant of each of the three layers should preferably be within 5 (i.e. less than or equal to 5) to ensure the antistatic capability of the pixel structure.

[0097] This application also provides an infrared detector, which includes the pixel structure described above.

[0098] The infrared detector may include the aforementioned pixel structure arranged in an array, and it may be an infrared imaging detector.

[0099] Please refer to Figure 5 and combine when necessary Figures 6 to 20 As shown, this application also provides a method for preparing a pixel structure, which includes the following steps S101 to S107:

[0100] In step S101, a substrate is provided; in step S103, a first sacrificial layer is disposed on the substrate.

[0101] In step S105, a conversion element is formed, which is used to convert optical signals into electrical signals. The conversion element includes a conversion body disposed on the first sacrificial layer and a conversion support structure penetrating the first sacrificial layer. The conversion support structure is disposed on the substrate and can support the conversion element. The side of the conversion body facing the first sacrificial layer is a first antistatic layer.

[0102] In step S107, the first sacrificial layer is removed to form a pixel structure; wherein, along the thickness direction of the pixel structure, the conversion body and the substrate are spaced apart, and the surface of the conversion body facing the substrate is provided with a first antistatic layer.

[0103] Please combine Figures 6 to 16 As shown, the preparation of pixel structure 100 is used as an example for illustration.

[0104] For a substrate having a base body, a passivation layer, and an electrode layer, the substrate 103 provided in step S101 can be provided directly. Alternatively, a base body can be provided first, and then the electrode layer and passivation layer can be disposed on the base body.

[0105] For example, such as Figure 6 First, a base body 1 is provided.

[0106] like Figure 7 As shown, an electrode layer 13 and a passivation layer 2 are disposed on the upper surface of the provided substrate body 1 to form a substrate 103.

[0107] It is understood that in some other embodiments, the electrode layer 13 may also be directly disposed on the substrate body 1, protruding from the surface of the substrate body 1, or embedded in the inner side of the substrate body 1.

[0108] like Figure 8 As shown, in step S103, a first sacrificial layer 3 is disposed on the substrate 103.

[0109] In step S105, a conversion element 101 is formed. The conversion element 101 is used to convert optical signals into electrical signals. The conversion element 101 includes a conversion body 1011 disposed on the first sacrificial layer 3 and a conversion support structure 1012 penetrating the first sacrificial layer 3. The conversion support structure 1012 is disposed on the substrate and can support the conversion element 101. The side of the conversion body 1011 facing the first sacrificial layer is a first antistatic layer 4.

[0110] In some embodiments, the conversion element 101 includes a support and protective layer 51 located above the first antistatic layer 4, and a heat-sensitive layer 6 located above the support and protective layer 51. Step S105, forming the conversion element, includes steps S1051 to S1053:

[0111] In step S1051, a first antistatic layer 4 is disposed on the first sacrificial layer;

[0112] In step S1052, a support protective layer 51 is provided on the side of the first antistatic layer 4 that is away from the first sacrificial layer;

[0113] In step S1053, a heat-sensitive layer 6 is provided on the side of the support protective layer 51 opposite to the first sacrificial layer.

[0114] The conversion element 101 may also include a support and protective layer 52, a conductive layer 7, and a support and protective layer 53, etc.

[0115] Please combine Figures 9 to 16 As shown, specifically, step S105 can be implemented through the following steps:

[0116] First, such as Figure 9 As shown, a first antistatic material layer 40 is deposited on the first sacrificial layer 3.

[0117] Then, as Figure 10 As shown, an insulating material layer 50 is deposited on the first antistatic material layer 40, and a heat-sensitive layer 6 is disposed on the insulating material layer 50.

[0118] Specifically, the heat-sensitive layer 6 is formed by first forming a heat-sensitive material layer and then etching it.

[0119] Continuing, such as Figure 11 As shown, an opening 31 is provided that penetrates the first antistatic material layer 40, the insulating material layer 50 and the first sacrificial layer 3, and the electrode layer 13 is exposed through the opening 31.

[0120] After the first antistatic material layer 40 and the insulating material layer 50 are provided with openings 31, they can respectively form the corresponding first antistatic layer 4 and the supporting protective layer 51.

[0121] Continuing, such as Figure 12 and Figure 13 As shown, another insulating material layer is disposed on the hole wall of the opening 31, the exposed support protective layer 51, and the exposed surface of the heat-sensitive layer 6. The insulating material layer is then etched to form the support protective layer 52. At least a portion of the support protective layer 52 at the bottom of the opening 31 is etched away, exposing the electrode layer 13 from the etched portion of the support protective layer 52. A portion of the insulating material above the heat-sensitive layer 6 is etched away, exposing a portion of the heat-sensitive layer 6.

[0122] Continuing, such as Figure 14 As shown, a conductive material layer is provided on the surface of the support protective layer 52, the exposed electrode layer 13 and the heat-sensitive layer 6, and an etch is performed to form a conductive layer 7 so that the electrode layer 13 and the heat-sensitive layer 6 are electrically connected.

[0123] Continuing, such as Figure 15 As shown, a support protective layer 53 is formed on the side of the conductive layer 7 facing away from the substrate 103.

[0124] It should be noted that for the conversion body 1011 and the conversion support structure 1012 connected together by the connecting arm 1013, the corresponding film layers can be etched at the same time or after the formation of the support protective layer 53 to form the connecting arm 1013 structure.

[0125] In step S107, as Figure 16 As shown, the first sacrificial layer 3 is removed to form a pixel structure 100. Along the thickness direction of the pixel structure 100, the conversion body 1011 and the substrate 103 are spaced apart. A first antistatic layer 4 is provided on the surface of the conversion body 1011 facing the substrate 103, and the first antistatic layer 4 is opposite to the substrate 103.

[0126] The above describes the fabrication of a pixel structure having a conversion element 101 on a substrate 103 and a first antistatic layer on the side of the conversion body 1011 facing the substrate 103.

[0127] It is understood that, for the fabrication of a pixel structure (such as pixel structure 200) having a conversion element 101 on the substrate 103 and a second antistatic layer on the side of the conversion body 1011 facing away from the substrate 103, after forming the heat-sensitive layer 6 in step S1053, the formation of the conversion element includes the following step S1054:

[0128] In step S1054, a second antistatic layer is provided on the side of the heat-sensitive layer 6 facing away from the substrate 103.

[0129] Specifically, after the support and protective layer 52 is formed, a second antistatic layer can be provided on the surface of the support and protective layer 52 located on the part of the conversion body 1011 that is away from the substrate 103.

[0130] It is understood that an enhancement element 102 needs to be provided on top of the conversion element 101. After step S105 and before step S107, the fabrication method further includes the following step S106:

[0131] In step S106, an enhancement element is formed on the side of the conversion element away from the substrate; the enhancement element includes an enhancement body for absorbing light signals, and the enhancement body is spaced apart from the conversion element along the thickness direction of the pixel structure; wherein, the surface of the enhancement body facing away from the conversion element and the surface facing the conversion element are provided with a third antistatic layer on at least one of the two surfaces.

[0132] In some embodiments, the pixel structure is Figure 3The pixel structure 300 or a similar pixel structure shown includes an enhancement metal layer for enhancing the absorption of light signals, and a first anti-oxidation layer and a second anti-oxidation layer respectively disposed on the surface of the enhancement metal layer facing the conversion element and on the surface facing away from the conversion element. The formation of the enhancement element includes:

[0133] Form the first antioxidant layer;

[0134] A reinforcing metal layer is formed on the side of the first antioxidant layer opposite to the conversion element;

[0135] A second antioxidant layer is formed on one side of the reinforcing metal layer;

[0136] The second antioxidant layer is formed before and / or after the formation of the first antioxidant layer, and the third antistatic layer is located on the surface of at least one of the first and second antioxidant layers.

[0137] In other embodiments, the pixel structure is Figure 4 The illustrated pixel structure 400 or a similar pixel structure, wherein the enhancement body includes an enhancement metal layer for enhancing the absorption of light signals, and the forming enhancement element includes:

[0138] A reinforcing metal layer is formed, and a third antistatic layer is provided on at least one of the two surfaces of the reinforcing metal layer, one facing away from the conversion element 101 and the other facing the conversion element.

[0139] Please combine Figures 17 to 20 As shown, the preparation of pixel structure 400 will be used as an example for illustration.

[0140] like Figure 17 As shown, a second sacrificial layer 8 is provided on the side of the conversion element 101 and the exposed first sacrificial layer 3 facing away from the substrate 103, and an opening 81 is formed in the second sacrificial layer 8 through its upper and lower surfaces to expose part of the conversion element so as to facilitate the installation of the reinforcing support structure 1022.

[0141] like Figure 18 and Figure 19 As shown, a first antioxidant material layer, a reinforcing metal material layer, and a second antistatic material layer are sequentially deposited on the surface of the second sacrificial layer 8 away from the substrate 103 and on the wall of the opening 81, and each material layer is etched to form a patterned reinforcing element 102.

[0142] Continuing, such as Figure 20 As shown, the second sacrificial layer 8 is removed.

[0143] The step of removing the second sacrificial layer 8 can be performed simultaneously with or separately from step S107 described above.

[0144] In this application, the structural embodiments and method embodiments described can complement each other without conflict.

[0145] In this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The terms "multiple" and "several" refer to two or more unless otherwise expressly defined.

[0146] Other embodiments of this application will readily occur to those skilled in the art upon consideration of the specification and practice of the disclosure herein. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this application are indicated by the following claims.

[0147] It should be understood that this application is not limited to the precise structure described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this application is limited only by the appended claims.

Claims

1. A pixel structure, characterized in that, include: Base; A conversion element is used to convert optical signals into electrical signals. The conversion element includes a conversion body and a conversion support structure disposed on the substrate and capable of supporting the conversion element. The conversion body and the substrate are spaced apart along the thickness direction of the pixel structure. The surface of the conversion body facing the substrate is provided with a first antistatic layer, and at least a portion of the first antistatic layer is exposed. An enhancement element is disposed on the side of the conversion element away from the substrate; the enhancement element includes an enhancement body for absorbing light signals, and the enhancement body is spaced apart from the conversion element along the thickness direction of the pixel structure; wherein, the surface of the enhancement body facing away from the conversion element and the surface facing the conversion element are provided with a third antistatic layer on at least one of the two surfaces, and at least a portion of the third antistatic layer is exposed; The enhancement body includes an enhancement metal layer for enhancing the absorption of light signals, a first anti-oxidation layer and a second anti-oxidation layer respectively disposed on the surface of the enhancement metal layer facing the conversion element and the surface facing away from the conversion element, and a third antistatic layer disposed on the surface of at least one of the first and second anti-oxidation layers.

2. The pixel structure as described in claim 1, characterized in that, The conversion body includes a support and protective layer disposed on the side of the first antistatic layer away from the substrate, and a heat-sensitive layer disposed on the side of the support and protective layer away from the substrate.

3. The pixel structure as described in claim 2, characterized in that, The dielectric constant of the first antistatic layer is less than that of the supporting protective layer.

4. The pixel structure as described in claim 1, characterized in that, The surface of the conversion body facing away from the substrate is provided with a second antistatic layer, and at least a portion of the second antistatic layer is exposed.

5. The pixel structure as described in claim 1, characterized in that, The enhancement body includes an enhancement metal layer for enhancing the absorption of light signals, the enhancement metal layer having a surface facing away from the conversion element and a surface facing the conversion element, and at least one of the two surfaces having a third antistatic layer.

6. The pixel structure as described in claim 1, characterized in that, The first antistatic layer is a silicon dioxide film, an aluminum oxide film, or a zinc oxide film; and / or, The third antistatic layer is a silicon dioxide film, an aluminum oxide film, or a zinc oxide film; and / or, The surface of the conversion body away from the substrate is provided with a second antistatic layer, wherein the second antistatic layer is a silicon dioxide film layer, an aluminum oxide film layer, or a zinc oxide film layer.

7. The pixel structure as described in claim 1, characterized in that, The surface of the conversion body away from the substrate is not provided with a second antistatic layer, the first antistatic layer and the third antistatic layer are made of the same material, or the difference in dielectric constant between the first antistatic layer and the third antistatic layer is less than or equal to 5. The surface of the conversion body away from the substrate is provided with a second antistatic layer, wherein the first antistatic layer, the second antistatic layer and the third antistatic layer are made of the same material, or the difference in dielectric constant between any two of the first antistatic layer, the second antistatic layer and the third antistatic layer is less than or equal to 5.

8. An infrared detector, characterized in that, The infrared detector comprises: the pixel structure as described in any one of claims 1-7.

9. A method for preparing a pixel structure, characterized in that, include: Provide a base; A first sacrificial layer is disposed on the substrate; A conversion element is formed, which is used to convert optical signals into electrical signals. The conversion element includes a conversion body disposed on the first sacrificial layer and a conversion support structure penetrating the first sacrificial layer. The conversion support structure is disposed on the substrate and can support the conversion element. The side of the conversion body facing the first sacrificial layer is a first antistatic layer. The first sacrificial layer is removed to form a pixel structure; wherein, along the thickness direction of the pixel structure, the conversion body and the substrate are spaced apart, and a first antistatic layer is provided on the surface of the conversion body facing the substrate, with at least a portion of the first antistatic layer exposed. The method further includes, after forming the conversion element and before removing the first sacrificial layer: An enhancement element is formed on the side of the conversion element away from the substrate; the enhancement element includes an enhancement body for absorbing light signals, and the enhancement body is spaced apart from the conversion element along the thickness direction of the pixel structure; wherein, the surface of the enhancement body facing away from the conversion element and the surface facing the conversion element are provided with a third antistatic layer on at least one of the two surfaces, and at least a portion of the third antistatic layer is exposed; The enhancement body includes an enhancement metal layer for enhancing the absorption of light signals, and a first antioxidant layer and a second antioxidant layer respectively disposed on the surface of the enhancement metal layer facing the conversion element and on the surface facing away from the conversion element. The formation of the enhancement element includes: Form the first antioxidant layer; A reinforcing metal layer is formed on the side of the first antioxidant layer opposite to the conversion element; A second antioxidant layer is formed on one side of the reinforcing metal layer; Specifically, a third antistatic layer is formed before the formation of the first antioxidant layer and / or after the formation of the second antioxidant layer, the third antistatic layer being located on the surface of at least one of the first antioxidant layer and the second antioxidant layer.

10. The method for preparing the pixel structure as described in claim 9, characterized in that, The forming conversion element includes: A first antistatic layer is disposed on top of the first sacrificial layer; A support and protective layer is provided on the side of the first antistatic layer that is away from the first sacrificial layer; A heat-sensitive layer is provided on the side of the support protective layer that is away from the first sacrificial layer.

11. The method for preparing the pixel structure as described in claim 10, characterized in that, After a heat-sensitive layer is disposed on the side of the supporting protective layer opposite to the first sacrificial layer, the formation of the conversion element includes: A second antistatic layer is disposed on the side of the heat-sensitive layer opposite to the substrate, and at least a portion of the second antistatic layer is exposed.

12. The method for preparing the pixel structure as described in claim 9, characterized in that, The enhancement body includes an enhancement metal layer for enhancing the absorption of optical signals, and the enhancement element includes: A reinforcing metal layer is formed, and a third antistatic layer is provided on at least one of the two surfaces of the reinforcing metal layer, one facing away from the conversion element and the other facing the conversion element.

Images