Process platform

Abstract

The present disclosure provides a process platform, which relates to the field of semiconductor technology. Specifically, it includes a transfer chamber, a storage chamber, and a plurality of reaction chambers. A first transfer unit is provided in the transfer chamber, and the first transfer unit is provided with a plurality of grasping mechanisms. The storage chamber is communicated with the transfer chamber, and the storage chamber is used for loading wafers. The plurality of reaction chambers are all communicated with the transfer chamber, and at least one wafer stage is provided in each reaction chamber. A liftable ejector pin is provided on the top surface of the wafer stage. According to the solution of the present disclosure, by providing a plurality of reaction chambers, the process platform can perform process reactions on a plurality of wafers. By providing a plurality of grasping mechanisms, the efficiency of transferring wafers between the reaction chambers and the storage chamber can be improved, so that the process platform can continuously perform process reactions, thereby improving the process productivity of the process platform.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a process platform. Background Art

[0002] On the process platform of a wafer, the time for transferring the wafer is often too long, which affects the secondary process in the reaction chamber and delays the production capacity of the process platform. Therefore, how to improve the transfer efficiency of the wafer and the production capacity of the process platform is a major problem to be solved. Summary of the Invention

[0003] The present disclosure provides a process platform, including a transfer chamber, a storage chamber, and a plurality of reaction chambers.

[0004] A first transfer unit is provided in the transfer chamber, and a plurality of grasping mechanisms are provided on the first transfer unit.

[0005] The storage chamber is communicated with the transfer chamber, and the storage chamber is used for loading wafers.

[0006] The plurality of reaction chambers are all communicated with the transfer chamber. At least one wafer stage is provided in each reaction chamber. A liftable ejector pin is provided on the top surface of the wafer stage. The ejector pin is used to support the wafer. The plurality of grasping mechanisms are used to transfer wafers between the plurality of reaction chambers and the storage chamber.

[0007] According to the solution of the present disclosure, by providing a plurality of reaction chambers, the process platform can perform process reactions on a plurality of wafers. By providing a plurality of grasping mechanisms, the transfer efficiency of wafers between the reaction chambers and the storage chamber can be improved, so that the process platform can continuously perform process reactions and improve the process production capacity of the process platform.

[0008] It should be understood that the content described in the Summary of the Invention section is not intended to limit the key or important features of the embodiments of the present disclosure, nor to limit the scope of the present disclosure. Other features of the present disclosure will become easily understood through the following description. Brief Description of the Drawings

[0009] Combined with the drawings and referring to the following detailed description, the above and other features, advantages, and aspects of the embodiments of the present disclosure will become more obvious. In the drawings, the same or similar reference numerals represent the same or similar elements, where:

[0010] Figure 1 is a schematic structural diagram of the process platform according to an embodiment of the present disclosure;

[0011] Figure 2 is a schematic structural diagram of the process platform according to an embodiment of the present disclosure;

[0012] Figure 3 is a schematic structural diagram of the reaction chamber according to an embodiment of the present disclosure;

[0013] Figure 4 is a schematic structural diagram of a manipulator according to an embodiment of the present disclosure;

[0014] Figure 5 is a schematic structural diagram of a manipulator according to an embodiment of the present disclosure;

[0015] Figure 6 is a schematic structural diagram of a manipulator according to an embodiment of the present disclosure;

[0016] Figure 7 is a schematic structural diagram of a manipulator according to an embodiment of the present disclosure;

[0017] Figure 8 is a schematic structural diagram of a process platform according to an embodiment of the present disclosure;

[0018] Figure 9 is a schematic structural diagram of an application scenario of a process platform according to an embodiment of the present disclosure;

[0019] Figure 10 is a schematic structural diagram of an application scenario of a process platform according to an embodiment of the present disclosure. Detailed implementation manners

[0020] The following describes exemplary embodiments of the present disclosure with reference to the accompanying drawings. Various details of the embodiments of the present disclosure are included to facilitate understanding, and they should be considered merely exemplary. Therefore, those of ordinary skill in the art should recognize that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of the present disclosure. Similarly, descriptions of well-known functions and structures are omitted for clarity and conciseness.

[0021] An embodiment of the present disclosure provides a process platform, as Figure 1 shown, including a transfer chamber 1, a storage chamber 2, and a plurality of reaction chambers 3.

[0022] A first transfer unit 11 is provided in the transfer chamber 1, and a plurality of grasping mechanisms 1111 are provided on the first transfer unit 11.

[0023] The storage chamber 2 is communicated with the transfer chamber 1, and the storage chamber 2 is used for loading wafers.

[0024] The plurality of reaction chambers 3 are all communicated with the transfer chamber 1. At least one wafer stage 31 is provided in each reaction chamber 3. A liftable ejector pin 311 is provided on the top surface of the wafer stage 31. The ejector pin 311 is used to support the wafer, and the plurality of grasping mechanisms 1111 are used to transfer the wafer between the plurality of reaction chambers 3 and the storage chamber 2.

[0025] According to the embodiment of the present disclosure, it should be noted that:

[0026] The transfer port between the accommodation bin 2 and the transfer bin 1 can be set as a non-closable transfer port, or alternatively, the transfer port between the accommodation bin 2 and the transfer bin 1 can be set as an openable and closable transfer port. When the gripping mechanism 1111 transfers the wafer between the transfer bin 1 and the accommodation bin 2, the transfer port is opened, so that the accommodation bin 2 is connected to the transfer bin 1, facilitating the transfer of the wafer. When the gripping mechanism 1111 completes the transfer of the wafer between the transfer bin 1 and the accommodation bin 2, the transfer port is closed.

[0027] The transfer port between the reaction chamber 3 and the transfer bin 1 can be set as a non-closable transfer port, or alternatively, the transfer port between the reaction chamber 3 and the transfer bin 1 can be set as an openable and closable transfer port. When the gripping mechanism 1111 transfers the wafer between the transfer bin 1 and the reaction chamber 3, the transfer port is opened, so that the reaction chamber 3 is connected to the transfer bin 1, facilitating the transfer of the wafer. When the gripping mechanism 1111 completes the transfer of the wafer between the transfer bin 1 and the reaction chamber 3, the transfer port is closed.

[0028] The lifting state of the ejector pin 311 can be selected and adjusted as needed. For example, when the wafer is input into the reaction chamber, the ejector pin 311 ejects from the top surface of the wafer stage 31 to a high position to support the wafer. When the wafer is taken out of the reaction chamber 3, the ejector pin 311 descends from the high position to a low position and disengages from the wafer.

[0029] Multiple reaction chambers 3 can be used for the same process reaction (i.e., they can be reaction chambers 3 of the same type), or they can be used for different process reactions respectively (i.e., they can be reaction chambers 3 of different types). For example, after completing process A in the first reaction chamber 3, the gripping mechanism 1111 transfers the wafer into the second reaction chamber 3 for process B.

[0030] The shape and size of the transfer bin 1 can be selected and adjusted as needed, and no specific limitation is made here. For example, the transfer bin 1 can adopt a cavity structure with a quadrilateral or polygonal shape.

[0031] The shape and size of the accommodation bin 2 can be selected and adjusted as needed, and no specific limitation is made here.

[0032] The number and installation position of the accommodation bins 2 can be selected and adjusted as needed. For example, there are multiple accommodation bins 2, which are respectively arranged on each side of the transfer bin 1, facilitating the gripping mechanism 1111 to transfer the wafer.

[0033] The number and installation position of the reaction chambers 3 can be selected and adjusted as needed. For example, multiple reaction chambers 3 are respectively arranged on each side of the transfer bin 1, or alternatively, according to process requirements, multiple reaction chambers 3 are arranged on a part of the sides of the transfer bin 1, and one reaction chamber 3 is arranged on another part of the sides of the transfer bin 1.

[0034] The installation position of the accommodation bin 2 relative to the multiple reaction chambers 3 can be selected and adjusted as needed. For example, the accommodation bin 2 is arranged on one side of the transfer bin 1, and the multiple reaction chambers 3 are respectively arranged on the remaining sides of the transfer bin 1. Or, the accommodation bin 2 and a part of the reaction chambers 3 are arranged on one side of the transfer bin 1, and the other part of the reaction chambers 3 are respectively arranged on the remaining sides of the transfer bin 1.

[0035] The shapes and sizes of the multiple reaction chambers 3 can be selected and adjusted as needed, and no specific limitations are made here.

[0036] The structures and numbers of the multiple grasping mechanisms 1111 can be selected and adjusted as needed, and no specific limitations are made here. For example, the multiple grasping mechanisms 1111 can be plural or singular.

[0037] Between the multiple grasping mechanisms 1111, the wafer transfer of each grasping mechanism 1111 can be carried out independently, or the wafer transfer of the grasping mechanisms 1111 can be set to have an associated relationship.

[0038] The shapes and sizes of the wafer carriers 31 can be selected and adjusted as needed, and no specific limitations are made here.

[0039] The shape and size of the top surface of the wafer carrier 31 can be adjusted according to the shape and size of the wafer. For example, when a 12-inch wafer needs to be subjected to a process reaction, a top surface of the wafer carrier 31 not less than 12 inches can be selected.

[0040] The shapes and numbers of the ejector pins 311 can be selected and adjusted as needed, and no specific limitations are made here, as long as the ejector pins 311 can stably support the wafer.

[0041] Within the same reaction chamber 3, the lifting positions of the ejector pins 311 between different wafer carriers 31 can be the same or different. For example, the ejector pin 311 of the first wafer carrier 31 is at height 1, and the height of the ejector pin 311 of the second wafer carrier 31 can be at height 2. Among them, the lifting heights of the ejector pins 311 of the same wafer carrier 31 are kept consistent.

[0042] According to the embodiments of the present disclosure, by providing multiple reaction chambers 3, the process platform can perform process reactions on multiple wafers. By providing multiple grasping mechanisms 1111, the efficiency of wafer transfer between the reaction chambers 3 and the accommodation bin 2 can be improved, so that the process platform can continuously perform process reactions and improve the process productivity of the process platform. Since the ejector pins are arranged on the top surface of the wafer carrier 31 in a liftable manner, it is possible to cooperate with the grasping mechanisms 1111 at different positions and heights, facilitating the grasping mechanisms 1111 to smoothly place the wafers on the wafer carrier 31 or take the wafers out of the wafer carrier 31.

[0043] In one example, at least one of the multiple reaction chambers 3 includes a reaction chamber for any one of wafer degumming, wafer heat treatment, wafer oxidation, and wafer etching.

[0044] In one example, the process platform is applied to the process of wafer degumming. The photoresist that does not need to be retained on the top surface of the wafer is removed by using plasma technology. A 12-inch wafer is placed in the reaction chamber 3. By flowing in gases such as oxygen and nitrogen and applying external radio frequency energy, inductively coupled plasma is generated. An oxidation reaction occurs between the plasma on the wafer surface and the photoresist, generating volatile components such as carbon monoxide, carbon dioxide, and water, thereby removing the photoresist. In the process platform of the present disclosure example, by setting multiple reaction chambers 3 of the degumming type, and each reaction chamber 3 is provided with at least one wafer stage 31, the number of wafers for degumming that the process platform can process can be increased. By setting multiple robotic arms, the transfer efficiency of the wafers can be improved, enabling the process platform to achieve the maximum degree of uninterrupted process and effectively improving the production capacity of the wafer process.

[0045] In one example, two wafer stages 31 are arranged at intervals in each reaction chamber 3. The first transfer unit 11 is provided with four grasping mechanisms 1111. The four grasping mechanisms 1111 transfer wafers between the reaction chamber 3 and the accommodation bin 2. Specifically, the four grasping mechanisms 1111 take out four wafers from the accommodation bin 2 and transfer the four wafers into two reaction chambers 3 respectively for process reaction. The four grasping mechanisms 1111 repeat the operation so that all reaction chambers 3 have wafers for process reaction. Then, two of the four grasping mechanisms 1111 still take out two unprocessed wafers from the accommodation bin 2. When any one reaction chamber 3 finishes the process reaction, the two idle grasping mechanisms 1111 take out the wafers that have completed the process from the reaction chamber 3, and the two grasping mechanisms 1111 holding the unprocessed wafers input the two wafers into this reaction chamber 3 to continue the process reaction, thereby realizing uninterrupted process and improving the production capacity of the wafer process.

[0046] In one example, as Figure 9 、 Figure 10 shown, the reaction chamber 3 adopts a modular device, which is convenient for assembly with the transfer bin 1. The modular device includes a frame body 32. The frame body 32 is provided with a reaction chamber 3, a plasma source 33, a plasma matching box 34, an electrical module 35, a main control module 36, and a gas supply system 37. Among them, the main control module 36 controls the gas supply system 37 to supply process gases (such as oxygen, nitrogen, etc.) to the plasma source 33. The plasma matching box 34 emits radio frequency energy to the process gases to ionize them into plasma. After the plasma enters the reaction chamber 3, it undergoes a process reaction with the wafer. The electrical module 35 is used to send control signals to the reaction chamber 3, the plasma source 33, the plasma matching box 34, the main control module 36, and the gas supply system 37.

[0047] In one embodiment, as Figure 3 shown, the process platform further includes a heating unit 312 disposed on the top surface of the wafer stage 31, and the heating unit 312 is used to heat the area on the top surface of the wafer stage 31.

[0048] According to the embodiments of the present disclosure, it should be noted that:

[0049] The arrangement mode and quantity of the heating unit 312 can be selected and adjusted according to the process requirements of the wafer, and no specific limitation is made here. For example, when the quantity of the heating unit 312 is multiple and it is required that the wafer be heated evenly, then multiple heating units 312 can be evenly arranged on the top surface. Or when it is required that the central area of the wafer be heated higher than the edge area of the wafer, then more heating units 312 are arranged in the central area of the top surface, and fewer heating units 312 are arranged in the edge area of the top surface. Or the heating unit 312 can be an entire heating plate disposed on the top surface, and different temperatures can be set for each area of the heating plate.

[0050] According to the embodiments of the present disclosure, by setting the heating unit 312, the temperature of the area on the top surface of the wafer stage 31 can be increased, thereby increasing the temperature of the wafer, and further increasing the efficiency of the process reaction of the wafer. At the same time, the high temperature can volatilize the impurities generated during the wafer process reaction, avoid the influence of the impurities on the wafer process reaction, and improve the stability of the wafer process reaction.

[0051] In one embodiment, as Figure 3 shown, the process platform further includes a gas delivery unit disposed on the top surface of the wafer stage 31. The gas delivery unit includes a plurality of annular gas guide pipes 313 and a plurality of first strip-shaped gas guide pipes 314. The plurality of annular gas guide pipes 313 communicate with the plurality of first strip-shaped gas guide pipes 314, and a first exhaust hole 315 is provided at the communication position. The plurality of annular gas guide pipes 313 are concentrically arranged and coaxial with the top surface of the wafer stage 31. The plurality of first strip-shaped gas guide pipes 314 are evenly distributed and spaced along the diameter direction of the top surface of the wafer stage 31. The first exhaust hole 315 communicates with the top surface of the wafer stage 31, and the first exhaust hole 315 is used to output process gas.

[0052] Among them, the heating unit 312 is disposed between two adjacent annular gas guide pipes 313.

[0053] In one embodiment, the process platform further includes a gas delivery unit disposed on the top surface of the wafer stage 31. The gas delivery unit includes a plurality of annular gas conduits 313 and a plurality of first strip-shaped gas conduits 314. The plurality of annular gas conduits 313 communicate with the plurality of first strip-shaped gas conduits 314, and a first exhaust hole 315 is provided at the communication point. The plurality of annular gas conduits 313 are concentrically arranged and coaxial with the top surface of the wafer stage 31. The plurality of first strip-shaped gas conduits 314 are evenly distributed and spaced along the diameter direction of the top surface of the wafer stage 31. The first exhaust hole 315 communicates with the top surface of the wafer stage 31, and the first exhaust hole 315 is used to output process gas.

[0054] Wherein, the heating unit 312 is disposed between two adjacent first strip-shaped gas conduits 314.

[0055] In one embodiment, the process platform further includes a gas delivery unit disposed on the top surface of the wafer stage 31. The gas delivery unit includes a plurality of annular gas conduits 313 and a plurality of first strip-shaped gas conduits 314. The plurality of annular gas conduits 313 communicate with the plurality of first strip-shaped gas conduits 314, and a first exhaust hole 315 is provided at the communication point. The plurality of annular gas conduits 313 are concentrically arranged and coaxial with the top surface of the wafer stage 31. The plurality of first strip-shaped gas conduits 314 are evenly distributed and spaced along the diameter direction of the top surface of the wafer stage 31. The first exhaust hole 315 communicates with the top surface of the wafer stage 31, and the first exhaust hole 315 is used to output process gas.

[0056] Wherein, the heating unit 312 is disposed between two adjacent annular gas conduits 313 and two adjacent first strip-shaped gas conduits 314.

[0057] According to the embodiments of the present disclosure, it should be noted that:

[0058] The distance between two adjacent annular gas conduits 313 can be the same or different, that is to say, the plurality of annular gas conduits 313 can be arranged equidistantly or non-equidistantly on the top surface, and no specific limitation is made here.

[0059] The shape and size of the first exhaust hole 315 can be selected and adjusted as needed, and no specific limitation is made here.

[0060] During the process reaction, it is necessary to raise the temperature of the back surface of the wafer to further increase the temperature of the wafer. However, in view of different process requirements, it is necessary to heat different regions of the wafer to different temperatures. For example, the central region of the wafer needs to be heated to 300 degrees Celsius, and the edge region of the wafer needs to be heated to 200 degrees Celsius. Moreover, the temperature of the intermediate region between the edge region and the central region needs to increase in a curve trend to avoid the influence of gradient temperature difference on the process result. Through the embodiments of the present disclosure, the above problems can be effectively solved.

[0061] According to an embodiment of the present disclosure, by providing a heating portion 312 between the annular gas guide pipe 313 and the first strip-shaped gas guide pipe 314, the process gas absorbs heat and then is discharged to the back surface of the wafer, thereby reducing the gradient temperature between two adjacent heating portions 312, making the wafer evenly heated, and improving the stability of the process results of the wafer.

[0062] In one example, nitrogen can be used as the process gas in the gas delivery portion.

[0063] In one embodiment, as Figure 3 shown, the gas delivery portion further includes a plurality of second strip-shaped gas guide pipes 316, which are in communication with some of the plurality of annular gas guide pipes 313, and a second exhaust hole 317 is provided at the communication position. The plurality of second strip-shaped gas guide pipes 316 are evenly distributed and spaced along the diameter direction of the top surface of the wafer stage 31. The plurality of second strip-shaped gas guide pipes 316 are arranged in a staggered manner with the plurality of first strip-shaped gas guide pipes 314. The second exhaust hole 317 is in communication with the top surface of the wafer stage 31, and the second exhaust hole 317 is used to output the process gas.

[0064] Wherein, the heating portion 312 is provided between two adjacent second strip-shaped gas guide pipes 316.

[0065] According to an embodiment of the present disclosure, it should be noted that:

[0066] The length of the second strip-shaped gas guide pipe 316 can be selected and adjusted as needed. For example, the length of the second strip-shaped gas guide pipe 316 is the same as the length of the first strip-shaped gas guide pipe 314, or the length of the second strip-shaped gas guide pipe 316 is less than the length of the first strip-shaped gas guide pipe 314.

[0067] The installation position of the second strip-shaped gas guide pipe 316 can be selected and adjusted according to process requirements. For example, if the gradient temperature requirement in the central area of the wafer is relatively high, then the second strip-shaped gas guide pipe 316 is arranged at a position offset from the center area on the top surface of the wafer stage 31, so as to increase the exhaust volume in the central area of the top surface of the wafer stage 31, thereby reducing the temperature difference in the central area of the wafer.

[0068] The shape and size of the second exhaust hole 317 can be selected and adjusted as needed, and no specific limitation is made here.

[0069] According to an embodiment of the present disclosure, by providing a heating portion 312 between two adjacent second strip-shaped gas guide pipes 316, the process gas absorbs heat and then is discharged to the back surface of the wafer, thereby reducing the gradient temperature between two adjacent heating portions 312, making the wafer evenly heated, and further improving the stability of the process results of the wafer.

[0070] In one embodiment, as Figure 1As shown, the process platform further includes a cooling chamber 4, which is arranged on the transfer table and is used to cool the wafers after the process reaction.

[0071] According to an embodiment of the present disclosure, it should be noted that:

[0072] The installation position of the cooling chamber 4 can be selected and adjusted according to process requirements. For example, if the wafers to be transferred into the accommodation chamber 2 are low-temperature wafers, the cooling chamber 4 is arranged between the reaction chamber 3 and the accommodation chamber 2. Another example is that if two adjacent reaction chambers 3 are of different types and wafers need to be transferred between them but have different temperature requirements, the cooling chamber 4 is arranged between these two adjacent reaction chambers 3.

[0073] The number of cooling chambers 4 can be selected and adjusted according to needs, and no specific limitation is made here.

[0074] According to an embodiment of the present disclosure, by arranging the cooling chamber 4 on the transfer table, the wafers that have completed the process can be temporarily accommodated, avoiding the wafers from cooling in the reaction chamber 3 and delaying the next process, and further improving the production capacity of the reaction chamber 3.

[0075] In one example, as Figure 2 、 Figure 8 shown, the cooling chamber 4 can be arranged in the front-end module 5.

[0076] In one embodiment, as Figure 2 、 Figure 8 shown, when the interiors of the multiple reaction chambers 3 and the transfer chamber 1 are all in a vacuum environment, the process platform further includes:

[0077] A front-end module 5 and a first transfer chamber 6. The first transfer chamber 6 is arranged in the transfer chamber 1, and the front-end module 5 is arranged between the first transfer chamber 6 and the accommodation chamber 2. The front-end module 5 is used to transfer wafers between the accommodation chamber 2 and the first transfer chamber 6.

[0078] According to an embodiment of the present disclosure, it should be noted that:

[0079] The front-end module 5 can be understood as a device for transferring wafers from the non-vacuum accommodation chamber 2 to the vacuum first transfer chamber 6, and the specific structure is not specifically limited here.

[0080] The number of the first transfer chambers 6 can be selected and adjusted according to needs, and no specific limitation is made here.

[0081] According to an embodiment of the present disclosure, by setting the front-end module 5, it is possible to avoid affecting the vacuum environment inside the reaction chamber 3 and the transfer chamber 1 during the wafer transfer process, while reducing the loss of process gases and plasma in the reaction chamber 3, shortening the adjustment time of the internal environment during the secondary process reaction in the reaction chamber 3, and further improving the production capacity of the process platform.

[0082] In one embodiment, as Figure 8 shown, the process platform further includes a second transfer unit 7 and a second transfer buffer 8. Both the second transfer unit 7 and the second transfer buffer 8 are provided in the transfer chamber 1. The second transfer unit 7 is provided between the first transfer unit 11 and the accommodation chamber 2, and the second transfer buffer 8 is provided between the first transfer unit 11 and the second transfer unit 7. The second transfer buffer 8 is used to temporarily accommodate the wafers transferred from the second transfer unit 7 to the first transfer unit 11.

[0083] According to an embodiment of the present disclosure, it should be noted that:

[0084] The mechanism and quantity of the gripping mechanism 1111 provided on the second transfer unit 7 can be selected and adjusted as needed. For example, the structure and quantity of the gripping mechanism 1111 of the second transfer unit 7 are the same as those of the first transfer unit 11. Based on this, the gripping mechanism 1111 of the second transfer unit 7 can not only transfer wafers to the second transfer buffer 8, but also transfer wafers to a part of the reaction chambers 3, thereby improving the wafer transfer efficiency.

[0085] The quantity of the second transfer buffer 8 can be selected and adjusted as needed, and no specific limitation is made here.

[0086] According to an embodiment of the present disclosure, by providing the second transfer unit 7 and the second transfer buffer 8, the transfer efficiency of the wafers between the accommodation chamber 2 and the reaction chambers 3 can be improved.

[0087] In one embodiment, as Figure 4 shown, the process platform further includes a first robotic arm 1112. The first end of the first robotic arm 1112 is connected to the transfer chamber 1, and the second end of the first robotic arm 1112 is rotatably connected to a plurality of gripping mechanisms 1111. A plurality of gripping mechanisms 1111 are all provided at a first height.

[0088] Among them, the lifting height of the top end of the ejector pin 311 is adapted to the setting height of the plurality of gripping mechanisms 1111.

[0089] According to an embodiment of the present disclosure, it should be noted that:

[0090] The first robotic arm 1112 and the gripping mechanisms 1111 together form a robotic hand structure.

[0091] The lifting height of the top end of the ejector pin 311 is adapted to the setting height of the plurality of gripping mechanisms 1111, which can be understood as: when the gripping mechanism 1111 inputs wafers into the reaction chamber 3, the top of the ejector pin 311 is adjusted to the first height to abut against the wafers.

[0092] The working process of multiple gripping mechanisms 1111 is specifically as follows: after a part of the gripping mechanisms 1111 take out the wafers from the reaction chamber 3, the gripping mechanisms 1111 are rotated, so that another part of the gripping mechanisms 1111 holding the wafers that have not undergone the process reaction are aligned with the reaction chamber 3, and the wafers that have not undergone the process reaction are sent into the reaction chamber 3.

[0093] According to an embodiment of the present disclosure, by providing multiple rotatable gripping mechanisms 1111, rapid alternation between the wafers that have completed the process reaction and the wafers that have not completed the process reaction can be achieved, shortening the time occupied by wafer replacement during the process reaction and improving the process efficiency.

[0094] In one example, when the interiors of multiple reaction chambers 3 and the transfer chamber 1 are both in a vacuum environment, the gripping ends of the gripping mechanisms 1111 can adopt suction cups to adsorb the edges of the wafers.

[0095] According to an example of the present disclosure, by providing the suction cups, the lateral friction between the gripping mechanisms 1111 and the wafers can be increased, preventing the wafers from falling off the gripping mechanisms 1111 during transmission.

[0096] In one embodiment, as Figure 5 shown, the process platform further includes a second robotic arm 1113. The first end of the second robotic arm 1113 is connected to the transfer chamber 1, and the second end of the second robotic arm 1113 is rotatably connected to multiple gripping mechanisms 1111. At least some of the multiple gripping mechanisms 1111 are arranged at different heights.

[0097] Wherein, the lifting height of the top of the ejector pin 311 is adapted to the set heights of the multiple gripping mechanisms 1111.

[0098] According to an embodiment of the present disclosure, it should be noted that:

[0099] The second robotic arm 1113 and the gripping mechanisms 1111 together form a robotic hand structure.

[0100] The set heights of the multiple gripping mechanisms 1111 can be selected and adjusted as needed. For example, the multiple gripping mechanisms 1111 can be respectively arranged at different heights, or a part of the gripping mechanisms 1111 can be arranged at the same height, and the other part of the gripping mechanisms 1111 can be respectively arranged at different heights.

[0101] The lifting height of the top of the thimble 311 is adapted to the set height of the multiple gripping mechanisms 1111. It can be understood that when the gripping mechanism 1111 at a high position conveys or removes the wafer from the first carrier stage 31 of the reaction chamber 3, the thimble 311 of the first carrier stage 31 is adjusted to the high position of the gripping mechanism 1111. When the gripping mechanism 1111 at a low position conveys or removes the wafer from the first carrier stage 31, the thimble 311 is adjusted from the high position to the low position. That is to say, the height of the thimble 311 of any carrier stage 31 is adjusted according to the height of the gripping mechanism 1111 that transfers the wafer to the carrier stage 31.

[0102] According to an embodiment of the present disclosure, by setting the gripping mechanisms 1111 at different heights, the space occupied by the gripping mechanisms 1111 during rotation can be reduced. At the same time, by lifting and lowering the thimble 311 to adapt to the height of the gripping mechanism 1111, the time taken for the lifting and lowering of the gripping mechanism 1111 can be avoided, which affects the efficiency of wafer replacement.

[0103] In one example, the second robotic arm 1113 is provided with four gripping mechanisms 1111, and the four gripping mechanisms 1111 are located at different heights respectively. There are two carrier stages 31 in the reaction chamber 3. The specific working process is as follows: the four gripping mechanisms 1111 rotate to the same direction. When taking out wafers from the first transfer bin 6 (or the accommodating bin 2), four wafers can be taken out simultaneously. Then the four gripping mechanisms 1111 rotate to different angles. When the first gripping mechanism 1111 inputs wafers to the first carrier stage 31 of the first reaction chamber 3 and the second gripping mechanism 1111 inputs wafers to the second carrier stage 31 of the first reaction chamber 3, the thimble 311 of the first carrier stage 31 is adjusted to height 1, and the thimble 311 of the second carrier stage 31 is adjusted to height 2. After the process reaction is completed, when the second gripping mechanism 1111 takes out wafers from the first carrier stage 31 and the first gripping mechanism 1111 takes out wafers from the second carrier stage 31, the thimble 311 of the first carrier stage 31 is adjusted to height 2, and the thimble 311 of the second carrier stage 31 is adjusted to height 1. After the process reaction is completed, if the third gripping mechanism 1111 takes out wafers from the first carrier stage 31 and the fourth gripping mechanism 1111 takes out wafers from the second carrier stage 31, the thimble 311 of the first carrier stage 31 is adjusted to height 3, and the thimble 311 of the second carrier stage 31 is adjusted to height 4. After the process reaction is completed, if the fourth gripping mechanism 1111 takes out wafers from the first carrier stage 31 and the third gripping mechanism 1111 takes out wafers from the second carrier stage 31, the thimble 311 of the first carrier stage 31 is adjusted to height 4, and the thimble 311 of the second carrier stage 31 is adjusted to height 3.

[0104] In one embodiment, as Figure 6 、 Figure 7As shown, the process platform further includes a third robotic arm 1114 and a fourth robotic arm 1115. The first end of the third robotic arm 1114 is connected to the transfer chamber 1, and the second end of the third robotic arm 1114 is connected to a part of the plurality of gripping mechanisms 1111. The first end of the fourth robotic arm 1115 is connected to the transfer chamber 1, and the second end of the fourth robotic arm 1115 is connected to another part of the plurality of gripping mechanisms 1111. A part of the gripping mechanisms 1111 is arranged at a first height, and another part of the gripping mechanisms 1111 is arranged at a second height.

[0105] Wherein, the lifting height of the top end of the ejector pin 311 is adapted to the set heights of a part of the gripping mechanisms 1111 and another part of the gripping mechanisms 1111.

[0106] According to an embodiment of the present disclosure, it should be noted that:

[0107] The third robotic arm 1114 and the gripping mechanism 1111 together form a robotic hand structure.

[0108] The fourth robotic arm 1115 and the gripping mechanism 1111 together form a robotic hand structure.

[0109] The lifting height of the top end of the ejector pin 311 is adapted to the set heights of the plurality of gripping mechanisms 1111. It can be understood that when the gripping mechanism 1111 at the first height transports or removes the wafer from the wafer stage 31 of the reaction chamber 3, the ejector pin 311 of the wafer stage 31 is adjusted to the first height of the gripping mechanism 1111. When the gripping mechanism 1111 at the second height transports or removes the wafer from the wafer stage 31, the ejector pin 311 is adjusted from the first height to the second height. That is to say, the height of the ejector pin 311 of the wafer stage 31 can be adjusted according to the height of the gripping mechanism 1111 that transports the wafer to the wafer stage 31.

[0110] According to an embodiment of the present disclosure, by lifting and lowering the ejector pin 311 to adapt to the height of the gripping mechanism 1111, it is possible to avoid the lifting and lowering of the gripping mechanism 1111 taking too long and affecting the efficiency of wafer replacement.

[0111] In one example, the third robotic arm 1114 is provided with two grasping mechanisms 1111, namely a first grasping mechanism 1111 and a second grasping mechanism 1111, and the fourth robotic arm 1115 is provided with two grasping mechanisms 1111, namely a third grasping mechanism 1111 and a fourth grasping mechanism 1111. The first grasping mechanism 1111 and the second grasping mechanism 1111 are located at height 1 (the first height), and the third grasping mechanism 1111 and the fourth grasping mechanism 1111 are located at height 2 (the second height). Two wafer carriers 31 are provided in the reaction chamber 3. The specific working process is as follows: When the first grasping mechanism 1111 and the second grasping mechanism input wafers to the two wafer carriers 31, the ejector pins 311 of the two wafer carriers 31 are adjusted to height 1. After the process reaction is completed, when the third grasping mechanism 1111 and the fourth grasping mechanism take out the wafers from the two wafer carriers 31, the ejector pins 311 of the two wafer carriers 31 are adjusted to height 2. After the third grasping mechanism 1111 and the fourth grasping mechanism take out the wafers, the first grasping mechanism 1111 and the second grasping mechanism input the unprocessed wafers grabbed from the storage bin 2 onto the two wafer carriers 31, and the ejector pins of the two wafer carriers 31 are adjusted to height 1 again. Based on this, the continuity of the process can be realized and the productivity of the process can be improved.

[0112] In the description of this specification, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present disclosure and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present disclosure.

[0113] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present disclosure, "a plurality" means two or more unless otherwise specifically defined.

[0114] In this disclosure, unless otherwise clearly defined or limited, terms such as "installed", "connected", "linked", "fixed", etc. shall be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection, an electrical connection, or a communication connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two components or the interaction relationship between two components. For those of ordinary skill in the art, the specific meanings of the above terms in this disclosure can be understood according to specific circumstances.

[0115] In this disclosure, unless otherwise clearly defined or limited, the first feature being "on" or "under" the second feature may include the direct contact between the first and second features, or may include the situation where the first and second features are not in direct contact but in contact through additional features between them. Moreover, the first feature being "above", "over" and "on top of" the second feature includes the first feature being directly above and obliquely above the second feature, or merely indicating that the horizontal height of the first feature is higher than that of the second feature. The first feature being "under", "beneath" and "underneath" the second feature includes the first feature being directly below and obliquely below the second feature, or merely indicating that the horizontal height of the first feature is lower than that of the second feature.

[0116] The above disclosure provides many different embodiments or examples for implementing different structures of the present disclosure. To simplify the disclosure of the present disclosure, the components and settings of specific examples are described above. Of course, they are merely examples and are not intended to limit the present disclosure. In addition, the present disclosure may repeat reference numerals and / or reference letters in different examples. This repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed.

[0117] The above specific embodiments do not constitute a limitation on the protection scope of the present disclosure. Those skilled in the art should understand that various modifications, combinations, sub - combinations and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present disclosure shall be included within the protection scope of the present disclosure.

Claims

1. A process platform, characterized in that, Comprising: A transfer chamber, inside which a first transfer part is provided, and a plurality of grasping mechanisms are provided on the first transfer part; A storage chamber, which is communicated with the transfer chamber and is used for loading wafers; A plurality of reaction chambers, all of which are communicated with the transfer chamber. At least one wafer stage is provided in each reaction chamber. A liftable ejector pin is provided on the top surface of the wafer stage. The ejector pin is used to support the wafer. The plurality of grasping mechanisms are used to transfer the wafer between the plurality of reaction chambers and the storage chamber; A heating part, which is provided on the top surface of the wafer stage and is used to heat the area on the top surface of the wafer stage; A gas delivery part, which is provided on the top surface of the wafer stage. The gas delivery part includes a plurality of annular gas pipes and a plurality of first strip-shaped gas pipes; the plurality of annular gas pipes are communicated with the plurality of first strip-shaped gas pipes, and a first exhaust hole is provided at the communication part. The plurality of annular gas pipes are concentrically arranged and coaxial with the top surface of the wafer stage. The plurality of first strip-shaped gas pipes are evenly distributed and spaced along the diameter direction of the top surface of the wafer stage. The first exhaust hole is communicated with the top surface of the wafer stage, and the first exhaust hole is used to output process gas; wherein, the heating part is provided between two adjacent annular gas pipes, and / or, the heating part is provided between two adjacent first strip-shaped gas pipes; The gas delivery part further includes a plurality of second strip-shaped gas pipes, which are communicated with some of the plurality of annular gas pipes, and a second exhaust hole is provided at the communication part. The plurality of second strip-shaped gas pipes are evenly distributed and spaced along the diameter direction of the top surface of the wafer stage. The plurality of second strip-shaped gas pipes and the plurality of first strip-shaped gas pipes are arranged in a staggered manner. The second exhaust hole is communicated with the top surface of the wafer stage, and the second exhaust hole is used to output the process gas; wherein, the heating part is provided between two adjacent second strip-shaped gas pipes.

2. The process platform according to claim 1, wherein Further comprising: A cooling chamber, which is provided in the transfer chamber and is used to cool the wafer after the process reaction.

3. The process platform according to claim 1, characterized in that, When the interiors of the plurality of reaction chambers and the transfer chamber are in a vacuum environment, the process platform further includes: A front-end module and a first transfer warehouse. The first transfer warehouse is provided in the transfer chamber. The front-end module is provided between the first transfer warehouse and the storage chamber. The front-end module is used to transfer the wafer between the storage chamber and the first transfer warehouse.

4. The process platform according to claim 1, characterized in that, Further comprising: A second transfer part and a second transfer warehouse, both of which are provided in the transfer chamber. The second transfer part is provided between the first transfer part and the storage chamber. The second transfer warehouse is provided between the first transfer part and the second transfer part. The second transfer warehouse is used to temporarily store the wafers transferred from the second transfer part to the first transfer part.

5. The process platform according to any one of claims 1 to 4, characterized in that, Further comprising a first robotic arm, the first end of the first robotic arm is connected to the transfer chamber, and the second end of the first robotic arm is rotatably connected to the plurality of grasping mechanisms. The plurality of grasping mechanisms are all arranged at a first height; Wherein, the lifting height of the top end of the ejector pin is adapted to the setting height of the plurality of grasping mechanisms.

6. The process platform according to any one of claims 1 to 4, characterized in that, It further includes a second robotic arm. The first end of the second robotic arm is connected to the transfer bin, and the second end of the second robotic arm is rotatably connected to the plurality of grasping mechanisms. At least some of the plurality of grasping mechanisms are arranged at different heights; Wherein, the lifting height of the top end of the ejector pin is adapted to the installation heights of the plurality of grasping mechanisms.

7. The process platform according to any one of claims 1 to 4, characterized in that, It further includes a third robotic arm and a fourth robotic arm. The first end of the third robotic arm is connected to the transfer bin, and the second end of the third robotic arm is connected to a part of the plurality of grasping mechanisms. The first end of the fourth robotic arm is connected to the transfer bin, and the second end of the fourth robotic arm is connected to another part of the plurality of grasping mechanisms. The part of the grasping mechanisms is arranged at a first height, and the other part of the grasping mechanisms is arranged at a second height; Wherein, the lifting height of the top end of the ejector pin is adapted to the installation heights of the part of the grasping mechanisms and the other part of the grasping mechanisms.

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