An anti-interference mixing device

Abstract

The present invention belongs to the technical field of microwave communication, and in particular, relates to an anti-interference frequency mixer. The frequency mixer comprises a mixer chip, a bandpass filter chip and a two-stage amplifier chip; the bandpass filter chip and the two-stage amplifier chip are respectively fixed on a ceramic carrier, and the bandpass filter chip and the two-stage amplifier chip are both enclosed by independent metal frames; a wire groove is provided at the bottom of the metal frame, and signals are transmitted between the bandpass filter chip and the two-stage amplifier chip through the wire groove. The anti-interference frequency mixer disclosed in the present invention can effectively reduce the mutual interference between the components inside the frequency mixer.

Description

Technical Field

[0001] The invention belongs to the technical field of microwave communications, and in particular relates to an anti-interference frequency mixing device. Background Art

[0002] As a key subsystem in radar and communication systems, the requirements for frequency converters are getting higher and higher with the rapid development of radar and communication systems. New frequency converters require compact structures, thin vertical dimensions, and high integration of multi-chip circuits. The main reason that limits the development of frequency converters towards miniaturization and high integration is the interference between the various circuits inside the mixer. When the frequency converter is reduced to a certain extent, interference will occur between the various internal circuits, resulting in the overall performance of the mixer deteriorating. Therefore, there is an urgent need for a mixer device with anti-interference characteristics, and the mixer device has the characteristics of high integration, small size and light weight. Summary of the invention

[0003] In order to reduce the interference between various circuits inside the mixer device, the present invention proposes an anti-interference mixer device, and the specific scheme is as follows:

[0004] An anti-interference frequency mixing device, the frequency mixing device comprising a mixer chip, a bandpass filter chip and a two-stage amplifier chip;

[0005] The mixer chip, the bandpass filter chip and the two-stage amplifier chip are respectively fixed on the ceramic carrier board 1, and the bandpass filter chip and the two-stage amplifier chip are enclosed by independent metal frames 2;

[0006] A wire groove 3 is provided at the bottom of the metal frame 2 , and signals are transmitted between the bandpass filter chip and the two-stage amplifier chip through the wire groove 3 .

[0007] Furthermore, the mixer chip, the bandpass filter chip and the two-stage amplifier chip are all bonded to different positions of the ceramic carrier board 1 by means of high-temperature conductive adhesive.

[0008] Furthermore, the frequency mixer device further comprises a high temperature ceramic housing, and the high temperature ceramic housing is sintered into one with the metal enclosure 2 to form a SIP housing.

[0009] Furthermore, a metal cover plate is provided on the top of the metal enclosure 2, and the metal cover plate is connected to the metal enclosure 2 by welding process;

[0010] A shell cover plate is arranged above the metal cover plate.

[0011] Furthermore, the frequency mixer device is a layered structure, which includes a bottom layer, a power circuit layer, a ground layer and a microwave circuit layer in sequence, wherein the bottom layer is a pinless surface mount package.

[0012] Furthermore, the microwave circuit layer, the ground layer, the power circuit layer and the bottom layer are connected through a vertical interconnection through-hole structure.

[0013] Furthermore, the microwave circuit layer includes a first filter circuit 61, a frequency doubling mixer circuit 62, a first attenuation circuit 63, a second filter circuit 64, a first-stage amplifier circuit 64, a third filter circuit 65, a second attenuation circuit 67 and a second-stage amplifier circuit 68 connected in sequence.

[0014] Furthermore, the frequency mixing device can be used in Ka, Ku and X bands.

[0015] The beneficial effects of the present invention are: it is conducive to the miniaturization of the mixer device, avoiding mutual interference between various circuits during the miniaturization process of the mixer device, which leads to the reduction of the overall performance of the mixer device. The mixer produced by the present invention has the characteristics of high integration, small size and light weight. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 The figure is a relative position diagram of a metal frame and a radio frequency circuit in an anti-interference frequency mixer device proposed in an embodiment of the present invention.

[0017] Figure 2 A top view of an anti-interference frequency mixing device proposed by the present invention;

[0018] Figure 3 Schematic diagram of the circuit structure in the embodiment of the present invention.

[0019] In the figure: 1, ceramic carrier; 2, metal frame; 3, wire trough; 4, radio frequency line; 5, shell; 61, first filter circuit; 62, frequency doubling mixer circuit; 63, first attenuation circuit; 64, second filter circuit; 65, first-stage amplifier circuit; 66, third filter circuit; 67, second attenuation circuit; 68, second-stage amplifier circuit; 21-30 are pin numbers. DETAILED DESCRIPTION

[0020] The present invention discloses an anti-interference frequency mixing device, which comprises a mixer chip, a bandpass filter chip and a two-stage amplifier chip;

[0021] The mixer chip, the bandpass filter chip and the two-stage amplifier chip are respectively fixed on the ceramic carrier board 1, and the bandpass filter chip and the two-stage amplifier chip are enclosed by independent metal frames 2;

[0022] A wire groove 3 is provided at the bottom of the metal frame 2 , and signals are transmitted between the mixer chip, the bandpass filter chip and the two-stage amplifier chip through the wire groove 3 .

[0023] Exemplarily, the frequency mixing device includes a mixer chip, a bandpass filter chip, a first amplifier chip, and a second amplifier chip. The bandpass filter chip processes the strays caused by the frequency mixing process, and the amplifier plays a role in signal amplification. When highly integrated, mutual interference will occur between chips. The present application uses a metal frame 2 to surround each chip, and each chip is located in an independent cavity to play an electromagnetic shielding role. Figure 1 As shown, in order to enable multiple chips to interact with each other, a wire groove 3 is provided at the bottom of the metal frame 2. The radio frequency line 4 is pre-buried in the wire groove 3, and each chip transmits signals through the radio frequency line 4. In this embodiment, each chip is protected from electromagnetic interference from other adjacent chips. At the same time, the stronger the anti-interference ability, the correspondingly improved transmission distance of each chip module. The cavity division can also avoid the self-excitation problem of small-size and large-gain signals. At the same time, preferably, the size of the wire groove 3 is opened according to the size of the radio frequency line 4, and the size of the radio frequency line 4 corresponds to the wire groove 3, so that the radio frequency line 4 passes through the wire groove 3.

[0024] Furthermore, the mixer chip, the bandpass filter chip and the two-stage amplifier chip are all bonded to different positions of the ceramic carrier board 1 by means of high-temperature conductive adhesive.

[0025] Exemplarily, a high temperature conductive adhesive is used to bond the mixer chip, the bandpass filter chip and the two-stage amplifier chip, and the bonding makes each chip tightly connected to the ceramic carrier 1. The use of high temperature conductive adhesive can make the mixer run stably in a high temperature environment and increase the signal transmission distance. Exemplarily, the bandpass filter is fixed at 1 / 3 of the rectangular ceramic carrier 1, and the two-stage amplifier chip is arranged at 2 / 3 of the rectangular ceramic carrier 1.

[0026] Furthermore, the frequency mixer device further comprises a high temperature ceramic housing, and the high temperature ceramic housing is sintered into one with the metal enclosure 2 to form a SIP housing.

[0027] Specifically, the high temperature ceramic shell and the metal frame 2 are sintered into one body, which can quickly transfer the temperature in the metal frame 2 and improve the heat resistance of the mixer. The metal frame 2 and the shell 5 are thin and light, which can reduce the weight of the entire mixer compared with the conventional design using a metal box.

[0028] Furthermore, a metal cover plate is provided on the top of the metal enclosure 2, and the metal cover plate is connected to the metal enclosure 2 by welding process;

[0029] A shell cover plate is arranged above the metal cover plate.

[0030] Specifically, in order to further improve the isolation effect between the chips, a metal cover is set on the top of the metal frame 2 and connected by welding. At the same time, in order to enhance heat dissipation, a shell cover is set on the metal cover. Since the area of ​​the shell cover is larger than the metal cover, when the heat of the metal cover is introduced into the shell cover, the heat dissipation can be completed faster.

[0031] Furthermore, the frequency mixer device is a layered structure, which includes a bottom layer, a power circuit layer, a ground layer and a microwave circuit layer in sequence, wherein the bottom layer is a pinless surface mount package.

[0032] Specifically, through the layered structure of the mixer device, it is possible to prevent microwave signals from interfering with each other through the power supply line, further optimize the purity of the amplifier power supply, and the ceramic substrate 1 is designed as a multi-layer wiring enhanced isolation. The ground port of each device in the microwave circuit layer is connected to the ground layer, and the power port is connected to the power circuit layer. Preferably, the microwave circuit layer, the ground layer, the power circuit layer and the bottom layer are connected by a vertical interconnection through-hole structure. Through the vertical interconnection structure, the complexity of the connection between the layers can be reduced and the stability of the mixer can be improved. Preferably, as Figure 2 As shown, the mixer device uses a surface-mount package to replace the conventional connector or waveguide to transmit radio frequency signals, power supply signals, etc., greatly reducing the size and weight of the mixer device. Figure 2 The bottom layer pins 21, 22, and 23 are respectively the external connection interface positions of the local oscillator signal, the intermediate frequency signal, and the radio frequency signal, 24 and 25 are respectively the external power supply interface positions, and pins 26-30 are ground terminals. Preferably, the ground terminal adopts a ground pad. The use of a ground pad can greatly improve the symmetry and beauty of the pin pad.

[0033] Furthermore, the microwave circuit layer includes a first filter circuit 61, a frequency doubling mixer circuit 62, a first attenuation circuit 63, a second filter circuit 64, a first-stage amplifier circuit 65, a third filter circuit 66, a second attenuation circuit 67 and a second-stage amplifier circuit 68 connected in sequence.

[0034] Specifically, after the local oscillator signal input passes through the first filtering circuit, it is multiplied by the frequency multiplication mixing circuit and then mixed with the local oscillator signal. The mixed signal passes through the first attenuation circuit, the second filtering circuit, the first-stage amplification circuit, the third filtering circuit, the second attenuation circuit, and the second-stage amplification circuit in sequence, and finally outputs a stable RF signal.

[0035] Furthermore, the frequency mixing device can be used in Ka, Ku and X bands.

[0036] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. An anti-interference mixing device, characterized in that: The frequency mixing device comprises a mixer chip, a bandpass filter chip and a two-stage amplifier chip; the mixer chip, the bandpass filter chip and the two-stage amplifier chip are respectively fixed on a ceramic carrier (1), and the bandpass filter chip and the two-stage amplifier chip are both enclosed by independent metal enclosures (2); a wire groove (3) is provided at the bottom of the metal enclosure (2), and signals are transmitted between the mixer chip, the bandpass filter chip and the two-stage amplifier chip via the wire groove (3); The frequency mixer device also includes a high temperature ceramic housing, which is sintered into one piece with the metal surrounding frame (2) to form a SIP housing.

2. The anti-interference frequency mixing device according to claim 1, characterized in that: The mixer chip, the bandpass filter chip and the two-stage amplifier chip are all bonded to different positions of the ceramic carrier board (1) by means of high-temperature conductive adhesive.

3. The anti-interference frequency mixing device according to claim 1, characterized in that: A metal cover plate is arranged on the top of the metal surrounding frame (2), and the metal cover plate is connected to the metal surrounding frame (2) by a welding process; a shell cover plate is arranged above the metal cover plate.

4. An anti-interference frequency mixing device according to any one of claims 1 to 3, characterized in that: The frequency mixer is a layered structure, which includes a bottom layer, a power circuit layer, a ground layer and a microwave circuit layer in sequence, wherein the bottom layer is a pinless surface mount package.

5. The anti-interference frequency mixing device according to claim 4, characterized in that: The microwave circuit layer, the ground layer, the power circuit layer and the bottom layer are connected through a vertical interconnection through-hole structure.

6. The anti-interference frequency mixing device according to claim 5, characterized in that: The microwave circuit layer comprises a first filtering circuit (61), a frequency doubling mixing circuit (62), a first attenuation circuit (63), a second filtering circuit (64), a first-stage amplification circuit (64), a third filtering circuit (65), a second attenuation circuit (67) and a second-stage amplification circuit (68) which are connected in sequence.

7. The anti-interference frequency mixing device according to claim 1, characterized in that: The mixing device can be used in Ka, Ku and X bands.

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