Material surface hydrogen-containing diamond-like film and method for preparing the same

Abstract

The application belongs to the technical field of material surface treatment, and particularly relates to a material surface hydrogen-containing diamond film and a preparation method thereof. A metal bonding layer, a carbide (or carbonitride) support layer and a ta-C:H film are sequentially arranged on the surface of a substrate or a workpiece. The thickness of the metal bonding layer is 0.1-1.0 microns, the thickness of the carbide or carbonitride support layer is 0.2-2.0 microns, and the thickness of the ta-C:H film is 0.1-5 microns. The metal bonding layer and the carbide (or carbonitride) support layer are prepared by using a magnetron sputtering or an arc ion plating technology, and the ta-C:H film is prepared by using an arc-enhanced glow discharge technology. The nanoindentation hardness of the film reaches 60 GPa or more, so that the preparation of a high-quality, high-performance and large-thickness ta-C:H film is realized.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of material surface treatment, and particularly relates to a material surface hydrogen-containing diamond-like carbon (ta-C:H) film and a preparation method thereof. BACKGROUND

[0002] Diamond-like Carbon (DLC) film was first prepared by Asienberg and Chabot of the United States in 1971 under room temperature conditions by ion beam deposition method. It is an amorphous carbon film containing diamond phase. After 50 years of research, the preparation technology and analysis testing means of the DLC film have been continuously developed. The carbon atoms in the DLC are mainly combined in sp3 hybridization bonds (diamond structure) and sp2 hybridization bonds (graphite structure), so the DLC has the characteristics of diamond and graphite, and has excellent properties such as high hardness, low friction coefficient, chemical inertness and small thermal expansion coefficient, and is an ideal material in the fields of machinery, electronics, aviation, medicine and acoustics.

[0003] Due to the differences in the source of carbon and the preparation method, the DLC film can be divided into two types: hydrogen-free diamond-like carbon film (a-C) and hydrogenated diamond-like carbon film (a-C:H). By determining the content of H in the film, the diamond-like film can be divided into two types: hydrogen-free and hydrogen-containing. According to the content of sp3 hybridization bonds in the film, the hydrogen-free DLC film is divided into amorphous carbon (a-C, with low sp3 hybridization bond content) and tetrahedral carbon (ta-C, with high sp3 hybridization bond content); the hydrogen-containing DLC film is divided into hydrogen-containing amorphous carbon (a-C:H, with low sp3 hybridization bond content) and tetrahedral hydrogen-containing amorphous carbon (ta-C:H, with high sp3 hybridization bond content). Too much hydrogen will reduce the adhesion and hardness of the coating and increase the internal stress. The hydrogen in the DLC will slowly release at a high temperature, causing the coating to work unstably. Tetrahedral amorphous carbon film (ta-C) is a type of diamond-like carbon, which is a series of hydrogen-free amorphous carbon films with sp3 bond content of 80% to 90%. It has high hardness, high elastic modulus, good chemical resistance and thermal shock resistance, and has the advantages of uniform organization, large-area deposition, low cost and smooth surface. However, due to the large difference in properties such as thermal expansion coefficient and elastic modulus between the ta-C film deposited on the substrate surface and the substrate, and due to the large growth stress in the film during preparation, the ta-C film generally has a large stress and a low adhesion strength to the substrate, which greatly limits its practical application.

[0004] The sp3 content of the ta-C:H film containing hydrogen is about 70%, which is slightly lower than that of the ta-C film (80-88%) without hydrogen. The hardness of the ta-C:H film is about 50 GPa, while the hardness of the ta-C film can reach 80 GPa. Although the ta-C:H film has certain differences in sp3 content and hardness compared with the ta-C film, it still has higher comprehensive performance compared with other amorphous DLC films. However, the ta-C:H film has a relatively narrow process window due to the harsh preparation process parameters, so the research and application of the ta-C:H film are less, which greatly limits the development of the film.

[0005] There are many methods for preparing the diamond-like carbon film, such as ion beam assisted deposition, magnetron sputtering, vacuum cathode arc deposition, plasma enhanced chemical vapor deposition, and pulsed laser deposition. Due to the different characteristics of each preparation technology, the prepared films have great differences in performance. Since the ta-C:H film is a kind of DLC film next to the ta-C film, the existing problem is that the process window is narrow. If a suitable preparation technology is developed, the research and application of the film can be effectively promoted. SUMMARY

[0006] In view of the shortcomings of the existing film material preparation technology, the purpose of the present application is to provide a material surface hydrogen-containing diamond-like carbon film and a preparation method thereof, so that the ta-C:H film not only has high hardness, but also has certain toughness, thereby promoting its application.

[0007] In order to achieve the above purpose, the technical scheme of the present application is as follows:

[0008] A material surface hydrogen-containing diamond-like carbon film is prepared by sequentially depositing a metal bonding layer, a carbide or carbon nitride support layer on the surface of a substrate or a workpiece by arc ion plating or magnetron sputtering technology, and then depositing a ta-C:H film by arc enhanced glow discharge technology. The substrate or workpiece surface sequentially has a metal bonding layer, a carbide or carbon nitride support layer and a ta-C:H film, and the thickness of the ta-C:H film is 0.1-5 microns.

[0009] The thickness of the metal bonding layer of the material surface hydrogen-containing diamond-like carbon film is 0.1-1.0 microns, and the thickness of the carbide or carbon nitride support layer is 0.2-2.0 microns.

[0010] The preparation method of the material surface hydrogen-containing diamond-like carbon film comprises the following steps:

[0011] S1, substrate or workpiece pretreatment: grind or polish the substrate or workpiece to be plated, and ultrasonic clean, then blow dry and place in a vacuum chamber;

[0012] S2, ion bombardment sputtering cleaning: the gas ions generated by the arc-enhanced glow discharge ion source are used to perform ion bombardment sputtering cleaning on the surface of the pretreated substrate or workpiece, so as to remove the surface contaminants and the oxide layer;

[0013] S3, transition layer deposition: the arc ion plating or the magnetron sputtering deposition method is used to sequentially deposit a metal bonding layer and a carbide or carbonitride support layer on the surface of the substrate or workpiece subjected to the ion bombardment sputtering cleaning, so as to form a transition layer.

[0014] S4, diamond-like film layer deposition: the C-containing gas is introduced, and the gas plasma generated by the arc-enhanced glow discharge ion source is used to deposit a diamond-like film layer on the transition layer.

[0015] S5, after the deposition is completed, the arc-enhanced glow discharge ion source is stopped, the pulsed negative bias power supply of the substrate or workpiece is turned off, the gas is stopped from being introduced, the heating is stopped, the vacuumizing is continued, the substrate or workpiece is cooled to below 80 DEG C along with the furnace, the vacuum chamber is opened, the substrate or workpiece is taken out, and the coating process is completed.

[0016] In the step S3, the arc ion plating or the magnetron sputtering deposition method is used to first introduce argon to deposit a metal bonding layer, and then introduce a carbon-containing gas such as methane or acetylene to deposit a carbide support layer.

[0017] Alternatively, in the step S3, the arc ion plating or the magnetron sputtering deposition method is used to first introduce argon to deposit a metal bonding layer, and then introduce a nitrogen-containing gas and a carbon-containing gas such as methane or acetylene to deposit a carbonitride support layer.

[0018] In the step S3, the metal bonding layer is one or more than two of Ti, Zr, Hf, Cr, Mo, W, V, Nb and Ta strong carbide-forming elements; or the metal bonding layer is one or more than two of Al, Cu, Ni and Ag weak carbide-forming elements; or the metal bonding layer is any combination of one or more than two of Ti, Zr, Hf, Cr, Mo, W, V, Nb and Ta strong carbide-forming elements and one or more than two of Al, Cu, Ni and Ag weak carbide-forming elements.

[0019] In the step S3, the metal bonding layer is one or more than two of Ti, Zr, Hf, Cr, Mo, W, V, Nb and Ta strong carbide-forming elements; or the metal bonding layer is one or more than two of Al, Cu, Ni and Ag weak carbide-forming elements; or the metal bonding layer is any combination of one or more than two of Ti, Zr, Hf, Cr, Mo, W, V, Nb and Ta strong carbide-forming elements and one or more than two of Al, Cu, Ni and Ag weak carbide-forming elements.

[0020] The preparation method of the hydrogen-containing diamond-like carbon film on the material surface, in step S4, the C-containing gas includes one or more than two of methane, acetylene, ethane, diacetylene, methylacetylene, propane, propyne nitrile, propylene, butane and butene.

[0021] The preparation method of the hydrogen-containing diamond-like carbon film on the material surface, in step S4, in order to reduce the explosion risk of the carbon-hydrogen gas, inert gas is first introduced, the gas pressure is controlled in the range of 0.01-1.0 Pa, then the C-containing gas is introduced, the volume ratio of the C-containing gas in the total introduced gas flow is in the range of 10-90%, and the deposition gas pressure is controlled in the range of 0.02-1.0 Pa, the inert gas includes one or more than two of helium, neon, argon, krypton, xenon and radon.

[0022] The preparation method of the hydrogen-containing diamond-like carbon film on the material surface, in step S4, the substrate or workpiece is applied with direct current or pulse negative bias, the pulse negative bias amplitude is controlled in the range of -20 V to -500 V, and the pulse bias duty cycle is controlled in the range of 20% to 80%.

[0023] The preparation method of the hydrogen-containing diamond-like carbon film on the material surface, the material of the substrate or workpiece is ceramic, hard alloy, steel, high-temperature alloy, aluminum alloy, titanium alloy, glass or silicon.

[0024] The design idea of the present application is that: an arc-enhanced glow discharge ion source with high ionization rate is used to ionize the C-containing gas, so that plasma is generated, and through effective regulation of the deposition temperature and the pulse negative bias of the substrate, a ta-C:H film with high hardness is prepared.

[0025] Compared with the prior art, the present application has the following beneficial effects:

[0026] 1. The present application uses an arc-enhanced glow discharge ion source to ionize the C-containing gas, so that plasma is generated, and then deposited on the substrate surface under the action of the bias electric field of the substrate to form a film. The plasma generated by the ion source has the advantages of high density and high energy, and through optimization and adjustment of parameters, hydrogen-containing DLC films with different properties can be prepared, especially ta-C:H films. The ta-C:H film not only has high hardness, but also has good adhesion to the substrate, and has high film thickness, which can be suitable for application under different working conditions.

[0027] 2. The present application uses arc ion plating or magnetron sputtering technology to prepare a metal bonding layer on the substrate surface, so that hydrogen-containing DLC films can be deposited on conductive or non-conductive substrate materials according to the characteristics of different materials.

[0028] 3、The present application uses carbide or carbonitride formed by strong carbide forming element as support layer besides metal transition layer, which can improve the binding strength of different substrate material surface and hydrogen-containing DLC film, and promote the application of ta-C:H film.

[0029] 4、The present application uses arc ion plating or magnetron sputtering to prepare metal adhesive layer and support layer on the surface of substrate material, and then uses arc enhanced glow discharge ion source to prepare ta-C:H film. This technology has the characteristics of high film hardness, good toughness and high deposition rate, and this method is easy to realize industrial production. DETAILED DESCRIPTION

[0030] In the specific implementation process, the present application uses arc ion plating or magnetron sputtering technology to sequentially deposit metal adhesive layer, carbide or carbonitride support layer on the surface of workpiece, and then uses arc enhanced glow discharge ion source to deposit ta-C:H film. The thickness of ta-C:H film is 0.1-5 microns.

[0031] The present application is further described in detail through examples as follows.

[0032] Example 1

[0033] The substrate uses stainless steel (304 grade), the size of sample is 20mm x 20mm x 2mm, and the size of plating film surface is 20mm x 20mm. The surface is first ground, polished, ultrasonic cleaned, dried, and then placed on the sample table of arc ion plating equipment vacuum chamber. After the vacuum chamber is vacuumized to 4.5 x 10 -3Pa, the vacuum chamber is heated to 100℃, argon is introduced into the vacuum chamber, and the gas pressure is controlled at 1.2Pa; the substrate is subjected to a pulsed negative bias of -200V, the pulse bias duty cycle is 70%, the arc-enhanced glow discharge ion source is turned on, and the surface of the substrate is subjected to glow discharge ion cleaning for 40min; then the argon gas flow is adjusted, the gas pressure in the vacuum chamber is controlled at 1.1Pa; the substrate is subjected to a pulsed negative bias of -200V, the pulse duty cycle is 50%, the Cr target arc source is turned on at the same time, the Cr target arc current is 120A, the Cr film, i.e. the Cr metal bonding layer, is deposited for 15min, and the thickness of the Cr metal bonding layer is 0.41μm; then argon and acetylene are introduced into the vacuum chamber, the gas pressure is controlled at 0.8Pa, the pulsed negative bias is adjusted to -120V, the titanium target arc current is adjusted to 90A, the CrC film, i.e. the CrC support layer, is deposited for 10min, and the thickness of the CrC support layer is 0.38μm; then the gas pressure in the vacuum chamber is adjusted and controlled at 0.5Pa, the pulsed negative bias is adjusted to -80V, the pulse bias duty cycle is 40%, the arc-enhanced glow discharge ion source is turned on at the same time, the arc current is 120A, the DLC film is deposited for 70min, and the thickness of the DLC film is 0.88μm; after the deposition is completed, the arc-enhanced glow discharge ion source is turned off, the pulsed negative bias of the substrate is stopped, the gas introduction is stopped, vacuuming is continued, the workpiece is cooled to below 80℃ in the furnace, the vacuum chamber is opened, the workpiece is taken out, and the coating process is completed.

[0034] The surface nanoindentation test of the obtained ta-C:H thin film has a coating hardness of 14.2GPa, and the reason for the low nanoindentation hardness in the present embodiment is that the high deposition gas pressure, the low C ion energy and the low density are not conducive to the generation of SP3 bonds, so that the hardness of the thin film is low.

[0035] Example 2

[0036] The substrate is a hard alloy (YT15), the sample size is 15mmx15mmx4mm, and the coating surface size is 15mmx15mm. Before coating, the surface is first ground, polished, ultrasonically cleaned, dried, and then placed on the sample table in the vacuum chamber. When the vacuum chamber is pumped to a gas pressure of 4.5x10 -3Pa, the vacuum chamber was heated to 120℃, argon was introduced into the vacuum chamber, and the gas pressure was controlled at 0.8 Pa; the substrate was applied with a pulse negative bias of -190 V, the pulse bias duty cycle was 75%, the substrate surface was subjected to glow discharge ion cleaning for 45 min through arc-enhanced glow discharge; then the argon gas flow was adjusted, the gas pressure in the vacuum chamber was controlled at 1.1 Pa; the substrate was applied with a pulse negative bias of -200 V, the pulse duty cycle was 50%, the Ti target arc source was turned on at the same time, the Ti target arc current was 110 A, a Ti film, i.e. a Ti metal bonding layer, was deposited for 25 min, and the thickness of the Ti metal bonding layer was 0.49 μm; then argon and acetylene were introduced into the vacuum chamber, the gas pressure was controlled at 1.3 Pa, the pulse negative bias was adjusted to -60 V, the titanium target arc current was adjusted to 90 A, a TiC film, i.e. a TiC support layer, was deposited for 10 min, and the thickness of the TiC support layer was 0.57 μm; then argon and acetylene mixed gas was introduced, the acetylene gas flow accounted for 60% of the total introduced flow, the gas pressure in the vacuum chamber was adjusted and controlled at 0.01 Pa, the pulse negative bias was adjusted to -80 V, the pulse bias duty cycle was 40%, the arc-enhanced glow discharge ion source was turned on at the same time, the arc current was 120 A, a hydrogen-containing DLC film was deposited for 70 min, and the thickness of the hydrogen-containing DLC film was 0.88 μm; after the deposition was completed, the arc-enhanced glow discharge ion source was turned off, the pulse negative bias of the substrate was stopped, the gas introduction was stopped, vacuuming was continued, the workpiece was cooled to below 80℃ in the furnace, the vacuum chamber was opened, the workpiece was taken out, and the coating process was completed.

[0037] The ta-C:H thin film obtained was subjected to surface nanoindentation test, and the coating hardness was 62.6 GPa, and the elastic modulus was 482 GPa.

[0038] Example 3

[0039] The substrate was a die steel (H13 grade), the sample size was 24 mm x 18 mm x 10 mm, and the coating surface size was 24 mm x 18 mm. Before coating, the surface was first ground, polished, sandblasted, ultrasonically cleaned, and dried, and then placed on the sample table in the vacuum chamber. After the vacuum chamber was vacuumed to a gas pressure of 4.2 x 10 -3Pa, the vacuum chamber was heated to 95℃, argon was introduced into the vacuum chamber, and the gas pressure was controlled at 0.6 Pa; the substrate was applied with a pulsed negative bias of -170 V, the duty cycle of the pulsed bias was 73%, and the surface of the substrate was subjected to glow discharge ion cleaning for 55 min through arc-enhanced glow discharge; then the argon flow rate was adjusted, the gas pressure in the vacuum chamber was controlled at 0.75 Pa; the substrate was applied with a pulsed negative bias of -220 V, the duty cycle of the pulse was 55%, and a Ti50Al50 alloy target (atomic percentage, at.%) arc source was started at the same time, the Ti50Al50 alloy target arc current was 95 A, a TiAl film, i.e., a TiAl metal bonding layer, was deposited for 10 min, and the thickness of the TiAl metal bonding layer was 0.36 μm; then argon and acetylene were introduced into the vacuum chamber, the gas pressure was controlled at 1.5 Pa, the pulsed negative bias was adjusted to -90 V, the Ti50Al50 alloy target arc current was adjusted to 90 A, a TiAlC film, i.e., a TiAlC support layer, was deposited for 15 min, and the thickness of the TiAlC support layer was 0.63 μm; then argon and acetylene mixed gas was introduced, the acetylene gas flow rate accounted for 65% of the total introduced flow rate, the gas pressure in the vacuum chamber was adjusted and controlled at 0.015 Pa, the pulsed negative bias was adjusted to -100 V, the duty cycle of the pulsed bias was 45%, an arc-enhanced glow discharge ion source was started at the same time, the arc current was 115 A, a hydrogen-containing DLC film was deposited for 90 min, and the thickness of the hydrogen-containing DLC film was 1.38 μm; after the deposition was completed, the arc-enhanced glow discharge ion source was turned off, the pulsed negative bias of the substrate was stopped, the gas introduction was stopped, vacuuming was continued, the workpiece was cooled to below 80℃ in the furnace, the vacuum chamber was opened, the workpiece was taken out, and the coating process was completed.

[0040] The ta-C:H thin film obtained was subjected to surface nanoindentation test, and the coating hardness was 60.3 GPa, and the elastic modulus was 506 GPa.

[0041] Example 4

[0042] The substrate was high-speed steel (M2, W6Mo5Cr4V2), the sample size was 20 mm x 20 mm x 3 mm, and the coating surface size was 20 mm x 20 mm. Before coating, the surface was first ground, polished, ultrasonically cleaned, and dried, and then placed on the sample table in the vacuum chamber, and the vacuum chamber was vacuumed until the gas pressure reached 4.0 x 10 -3Pa, the vacuum chamber is heated to 105 DEG C, argon is introduced into the vacuum chamber, and the gas pressure is controlled at 1.2 Pa; the substrate is provided with a pulsed negative bias of -190 V, the pulse bias duty cycle is 75%, arc-enhanced glow discharge is used to perform glow discharge ion cleaning on the surface of the substrate for 60 min; then the argon flow rate is adjusted, the gas pressure in the vacuum chamber is controlled at 0.45 Pa; the substrate is provided with a pulsed negative bias of -190 V, the pulse duty cycle is 55%, the Cr50Al50 alloy target (atomic percentage, at.%) arc source is started, the Cr50Al50 alloy target arc current is 115 A, the CrAl film, i.e. the CrAl metal bonding layer, is deposited for 12 min, and the thickness of the CrAl metal bonding layer is 0.42 mu m; then argon and acetylene are introduced into the vacuum chamber, the gas pressure is controlled at 1.5 Pa, the pulsed negative bias is adjusted to -90 V, the Cr50Al50 alloy target arc current is adjusted to 110 A, the CrAlC film, i.e. the CrAlC support layer, is deposited for 12 min, and the thickness of the CrAlC support layer is 0.49 mu m; then argon and ethane mixed gas is introduced, the ethane gas flow rate accounts for 55% of the total introduced flow rate, the gas pressure in the vacuum chamber is adjusted and controlled at 0.025 Pa, the pulsed negative bias is adjusted to -110 V, the pulse bias duty cycle is 50%, the arc-enhanced glow discharge ion source is started, the arc current is 110 A, the hydrogen-containing DLC film is deposited for 100 min, and the thickness of the hydrogen-containing DLC film is 1.47 mu m; after the deposition is completed, the arc-enhanced glow discharge ion source is turned off, the pulsed negative bias of the substrate is stopped, the gas introduction is stopped, vacuuming is continued, the workpiece is cooled to below 80 DEG C in the furnace, the vacuum chamber is opened, the workpiece is taken out, and the coating process is completed.

[0043] The surface nanoindentation test of the obtained ta-C:H thin film shows that the coating hardness is 61.3 GPa, and the elastic modulus is 498 GPa.

[0044] The implementation results show that, in the application, the metal bonding layer and the carbide (or carbonitride) support layer are prepared by using the magnetron sputtering or arc ion plating technology, the ta-C:H thin film is prepared by using the arc-enhanced glow discharge technology (AEGD), the nanoindentation hardness of the ta-C:H thin film reaches more than 60 GPa, the elastic modulus of the ta-C:H thin film reaches more than 450 GPa, and thus the preparation of the high-quality, high-performance and large-thickness ta-C:H thin film is realized.

Claims

1. A method for preparing a hydrogen-containing diamond-like carbon film on the surface of a workpiece, characterized in that, Before coating, the surface is first ground, polished, ultrasonically cleaned, and dried, then placed on the sample stage in the vacuum chamber. The vacuum chamber is then evacuated until the pressure reaches 4.5 × 10⁻⁶. -3 At Pa, the vacuum chamber was heated to 120℃, and argon gas was introduced into the vacuum chamber, with the gas pressure controlled at 0.8 Pa. A -190V pulsed negative bias voltage was applied to the workpiece, with a pulsed bias voltage duty cycle of 75%. The workpiece surface was subjected to glow discharge ion cleaning for 45 min using arc-enhanced gas glow discharge. Then, the Ar gas flow rate was adjusted to control the gas pressure in the vacuum chamber at 1.1 Pa. A -200V pulsed negative bias voltage was applied to the workpiece, with a pulsed duty cycle of 50%. Simultaneously, the Ti target arc source was turned on, with a Ti target arc current of 110 A, and a Ti film, i.e., a Ti metal bonding layer, was deposited for 25 min, with a Ti metal bonding layer thickness of 0.49 μm. Then, argon and acetylene gas were introduced into the vacuum chamber, with the gas pressure controlled at 1.3 Pa. The pulsed negative bias voltage was adjusted to -60V, and the titanium target arc current was adjusted to 90 A, to deposit a TiC film, i.e., a TiC support layer, for 10 min. For 70 minutes, the TiC support layer thickness was 0.57 μm. Then, a mixture of argon and acetylene gas was introduced, with the acetylene flow rate accounting for 60% of the total flow rate. The pressure inside the vacuum chamber was adjusted to 0.01 Pa, and the pulsed negative bias was adjusted to -80 V with a pulsed bias duty cycle of 40%. Simultaneously, the arc-enhanced glow discharge ion source was turned on with an arc current of 120 A. A hydrogen-containing DLC ​​film was deposited for 70 minutes, resulting in a thickness of 0.88 μm. After deposition, the arc-enhanced glow discharge ion source was turned off, the workpiece pulsed negative bias was stopped, and the gas supply was stopped. Vacuuming continued, and the workpiece was cooled to below 80°C with the furnace. The vacuum chamber was opened, the workpiece was removed, and the coating process was completed. The obtained hydrogen-containing diamond-like carbon film was a ta-C:H film.

2. A method for preparing a hydrogen-containing diamond-like carbon film on the surface of a workpiece, characterized in that, Before coating, the surface undergoes grinding, polishing, sandblasting, ultrasonic cleaning, and drying. It is then placed on the sample stage in a vacuum chamber, where a vacuum is evacuated until the pressure reaches 4.2 × 10⁻⁶. -3 At Pa, the vacuum chamber was heated to 95℃, and argon gas was introduced into the vacuum chamber, with the gas pressure controlled at 0.6Pa. A -170V pulsed negative bias voltage was applied to the workpiece, with a pulsed bias voltage duty cycle of 73%. The workpiece surface was subjected to glow discharge ion cleaning for 55 min through arc-enhanced gas glow discharge. Then, the Ar gas flow rate was adjusted to control the gas pressure in the vacuum chamber at 0.75Pa. A -220V pulsed negative bias voltage was applied to the workpiece, with a pulsed duty cycle of 55%. At the same time, the Ti50Al50 alloy target arc source was turned on. The composition of the Ti50Al50 alloy target was Ti50 at.% and Al50 at.%. The arc current of the Ti50Al50 alloy target was 95A. A TiAl film, i.e., the TiAl metal bonding layer, was deposited for 10 min, with a TiAl metal bonding layer thickness of 0.36μm. Argon and acetylene were then introduced into the vacuum chamber, with the pressure controlled at 1.5 Pa. The pulsed negative bias was adjusted to -90 V, and the Ti50Al50 alloy target arc current was adjusted to 90 A. A TiAlC film, i.e., the TiAlC support layer, was deposited for 15 min, with a thickness of 0.63 μm. Next, a mixture of argon and acetylene was introduced, with the acetylene flow rate accounting for 65% of the total flow rate. The pressure in the vacuum chamber was adjusted to 0.015 Pa, and the pulsed negative bias was adjusted to -100 V with a pulsed bias duty cycle of 45%. Simultaneously, the arc-enhanced glow discharge ion source was activated, with an arc current of 115 A, and a hydrogen-containing DLC ​​film was deposited for 90 min. The thickness of the hydrogen-containing DLC ​​film was 1.38 μm. After deposition, the arc-enhanced glow discharge ion source was turned off, the workpiece pulse negative bias voltage was stopped, the gas supply was stopped, and the vacuum was continued. The workpiece was cooled to below 80°C with the furnace. The vacuum chamber was opened, the workpiece was taken out, and the coating process was completed. The hydrogen-containing diamond-like carbon film obtained was a ta-C:H film.

3. A method for preparing a hydrogen-containing diamond-like carbon film on the surface of a workpiece, characterized in that, Before coating, the surface is first ground, polished, ultrasonically cleaned, and dried, then placed on the sample stage in the vacuum chamber. The vacuum chamber is then evacuated until the pressure reaches 4.0 × 10⁻⁶. -3 At Pa, the vacuum chamber is heated to 105℃, and argon gas is introduced into the vacuum chamber, with the gas pressure controlled at 1.2Pa; a -190V pulse negative bias voltage is applied to the workpiece, with a pulse bias voltage duty cycle of 75%, and the workpiece surface is subjected to glow discharge ion cleaning for 60 min by arc-enhanced gas glow discharge; then the Ar gas flow rate is adjusted to control the gas pressure in the vacuum chamber at 0.45Pa. A pulsed negative bias voltage of -190V was applied to the workpiece, with a pulse duty cycle of 55%. Simultaneously, the Cr50Al50 alloy target arc source was activated. The Cr50Al50 alloy target composition was Cr50 at.% and Al50 at.%. The Cr50Al50 alloy target arc current was 115A. A CrAl film, i.e., the CrAl metal bond layer, was deposited for 12 minutes, with a thickness of 0.42μm. Then, argon and acetylene were introduced into the vacuum chamber, with the pressure controlled at 1.5Pa. The pulsed negative bias voltage was adjusted to -90V, and the Cr50Al50 alloy target arc current was adjusted to 110A. A CrAlC film, i.e., the CrAlC support layer, was deposited for 12 minutes. The thickness of the CrAlC support layer was 0.49 μm. Then, a mixture of argon and ethane gas was introduced, with the ethane gas flow rate accounting for 55% of the total flow rate. The gas pressure in the vacuum chamber was adjusted and controlled at 0.025 Pa. The pulse negative bias voltage was adjusted to -110 V with a pulse bias voltage duty cycle of 50%. At the same time, the arc-enhanced glow discharge ion source was turned on with an arc current of 110 A. The hydrogen-containing DLC ​​film was deposited for 100 min, and the thickness of the hydrogen-containing DLC ​​film was 1.47 μm. After deposition, the arc-enhanced glow discharge ion source is turned off, the workpiece pulse negative bias voltage is stopped, the gas supply is stopped, and the vacuum is continued. The workpiece is cooled with the furnace to below 80°C. The vacuum chamber is opened, the workpiece is taken out, and the coating process is completed. The hydrogen-containing diamond-like film obtained is a ta-C:H film.