Gas inlet device and wafer growth apparatus

Abstract

The application discloses an air inlet device and a wafer growth equipment, and belongs to the technical field of wafer growth. The air inlet device comprises a first pipeline, a second pipeline and a third pipeline. The first pipeline has a first air inlet end and a first air outlet end. The second pipeline has a second air outlet end, and the second air outlet end is located between the first air inlet end and the first air outlet end. The second pipeline is connected with the first pipeline through the second air outlet end. The third pipeline has a third air outlet end. A flange is surrounded to form an air outlet. The air outlet has a first direction and a second direction intersecting with the first direction. The flange has a plurality of air pockets in communication with the air outlet. The plurality of air pockets are arranged along the second direction. The air pocket in the middle is in communication with the first air outlet end, and the rest of the air pockets are in communication with the third air outlet end or the second air outlet end. The application can avoid the airflow mutual disturbance phenomenon that easily occurs when the auxiliary reaction gas and the main reaction gas are mixed in the growth chamber, and increase the stability of the film thickness and resistance between the wafer pieces.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of wafer growth, in particular to an air inlet device and a wafer growth equipment. BACKGROUND

[0002] In a semiconductor ASM (Automated Semiconductor Manufacturing) machine, due to unreasonable design of the air inlet flange, the main reaction gas and the auxiliary reaction gas flow out from the air inlet flange, enter the wafer growth chamber, and mix in the wafer growth chamber. However, since different reaction gases are each a gas, due to the difference in flow rate and flow, turbulence phenomenon is easily generated in the mixing process, resulting in inconsistent film thickness of semiconductor products, and unstable resistance repeatability between semiconductor wafers, which seriously affects the controllability and stability of the process. SUMMARY

[0003] The purpose of the present application is to provide an air inlet device and a wafer growth equipment, which can solve the technical problems of inconsistent film thickness of semiconductor products and unstable resistance repeatability between semiconductor wafers.

[0004] In a first aspect, an air inlet device is provided, comprising:

[0005] A first pipeline has a first air inlet end and a first air outlet end;

[0006] A second pipeline has a second air outlet end, the second air outlet end is located between the first air inlet end and the first air outlet end, and the second pipeline communicates with the first pipeline through the second air outlet end;

[0007] A third pipeline has a third air outlet end;

[0008] A flange is surrounded to form an air outlet, the air outlet has a first direction as an air outlet direction, and the air outlet also has a second direction intersecting the first direction; the flange has a plurality of air pockets communicating with the air outlet, the plurality of air pockets are arranged along the second direction, and the air pocket located in the middle communicates with the first air outlet end, and the remaining air pockets communicate with the third air outlet end or the first air outlet end.

[0009] In some embodiments, the plurality of air pockets includes a plurality of first air pockets and a plurality of second air pockets, the first air pockets and the second air pockets are alternately arranged along the second direction; and among the plurality of air pockets, at least the air pocket located in the middle is the first air pocket;

[0010] The first air pocket communicates with the first air outlet end, and the second air pocket communicates with the third air outlet end.

[0011] In some embodiments, among the plurality of air pockets arranged at intervals along the second direction, at least the air pockets located on both sides are the second air pockets.

[0012] In some embodiments, the flange further has a plurality of air outlet channels corresponding to the air pockets, and the air outlet channels are in communication between the air pockets and the air outlet.

[0013] In some embodiments, the flange comprises a base plate and a cover plate, the cover plate is connected to the base plate, the air pockets are formed on the side of the base plate facing the cover plate, and the cover plate covers the air pockets.

[0014] In some embodiments, a first through slot is arranged on the side of the base plate facing the cover plate, the first through slot corresponds to the air pockets, the first through slot is in communication between the air pockets and the air outlet, along the first direction, the cover plate covers the first through slot to form the air outlet channel; or,

[0015] a second through slot is arranged on the side of the cover plate facing the base plate, the second through slot corresponds to the air pockets, the second through slot is in communication between the air pockets and the air outlet, along the first direction, the base plate covers the opening of the second through slot to form the air outlet channel; or,

[0016] a third through slot is arranged on the side of the cover plate facing the base plate, a fourth through slot is arranged on the side of the base plate facing the cover plate, the third through slot and the fourth through slot are both in communication between the air pockets and the air outlet; the third through slot and the fourth through slot are oppositely arranged along the first direction to form the air outlet channel.

[0017] In some embodiments, along the first direction, the air outlet channel has opposite first and second side walls, the first and second side walls have a first dimension a, which satisfies: 0.6mm≤a≤0.9mm.

[0018] In some embodiments, the first dimension a satisfies: 0.8mm≤a≤0.9mm.

[0019] In some embodiments, along the second direction, the air pockets have a second dimension b, which satisfies: 56mm≤b≤60mm.

[0020] In some embodiments, the second dimension b satisfies: 57.5mm≤b≤59mm.

[0021] In a second aspect, the application provides a wafer growth device comprising the gas inlet device according to any one of the embodiments of the first aspect.

[0022] In some embodiments, the growth chamber has a growth cavity with an open end inside; the flange connects the growth chamber, and a cover seals the open end

[0023] The application has the beneficial effects that: the application provides an air inlet device and a wafer growth equipment, which comprises a first pipeline, a second pipeline and a third pipeline, the second pipeline is connected with the first pipeline at the second air outlet end, and is connected between the first air inlet end and the first air outlet end of the first pipeline, so that the gas in the second pipeline is mixed with the gas in the first pipeline before entering the flange, avoiding the phenomenon of airflow disturbance caused by the airflow of each strand after the gas flows out of the flange and mixes in the growth chamber, so that the gas supply is more uniform, and the stability of the film thickness and the resistance between the wafer pieces is improved; at the same time, at least the middle air chamber is connected with the first pipeline in the application, and the mixed and uniform gas is directly introduced into the middle region of the wafer with strong reaction, so as to balance the growth speed of the middle and epitaxial, and improve the uniformity of the film thickness when the wafer piece is taken out. BRIEF DESCRIPTION OF DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the application, and other drawings can be obtained by those skilled in the art without creative labor.

[0025] Figure 1 It is a overall perspective view of an air inlet device provided by the application;

[0026] Figure 2 It is a partial sectional perspective view of an air inlet device provided by the application;

[0027] Figure 3 It is a partial perspective view of an air inlet device provided by the application;

[0028] Figure 4 It is a perspective view of a flange in an air inlet device provided by the application;

[0029] Figure 5 It is Figure 4 a partial enlarged view of B in the middle;

[0030] Figure 6 It is a perspective sectional view of a flange in an air inlet device provided by the application;

[0031] Figure 7 It is Figure 6 a partial enlarged view of A in the middle;

[0032] Figure 8A side sectional view of a flange of an air inlet device provided in the present application;

[0033] Figure 9 A side sectional view of a flange of an air inlet device provided in the present application; Figure 8 An enlarged view of a portion at D;

[0034] Figure 10 A side sectional view of a flange of an air inlet device provided in the present application;

[0035] Figure 11 A first partial sectional perspective view of an air inlet device provided in the present application (showing a second through slot);

[0036] Figure 12 A second partial sectional perspective view of an air inlet device provided in the present application (showing a third through slot and a fourth through slot);

[0037] Figure 13 An exploded schematic view of a structure of a wafer growth apparatus provided in the present application;

[0038] In the figure: 100, first pipeline; 101, first air inlet end; 102, first air outlet end; 110, second pipeline; 111, second air outlet end; 120, third pipeline; 121, third air outlet end; 200, flange; 210, substrate; 211, air outlet; 212, air pocket; 213, first air pocket; 214, second air pocket; 215, first through slot; 216, fourth through slot; 220, cover plate; 221, second through slot; 222, third through slot; 230, air outlet passage; 231, first side wall; 232, second side wall; 300, growth chamber; 310, opening; 320, growth cavity; X, first direction; Y, second direction; Z, third direction. DETAILED DESCRIPTION

[0039] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0040] In the description of the present application, it should be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application.

[0041] The terms "first", "second", "third", "fourth", "fifth", "sixth", "seventh" and "eighth" are used only for descriptive purposes and are not to be construed as indicating or implying relative importance or a specific number of the technical features indicated. Thus, features defined with "first", "second", "third", "fourth", "fifth", "sixth", "seventh" or "eighth" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise specified and limited.

[0042] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connection" should be understood in a broad sense, for example, can be fixed connection, can also be detachable connection, or integrally connected; can be mechanical connection, can be directly connected, can also be indirectly connected through intermediate medium, can be the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0043] For the convenience of description, as shown in Figures 1 to 12 The air inlet device of the present application has intersecting first direction X, second direction Y and third direction Z, wherein the air outlet direction of the air outlet 211 is the first direction X. The first direction X, the second direction Y and the third direction Z are introduced for the convenience of accurately describing the relative position relationship and structure of each component of the air inlet device. It can be understood that the first direction X, the second direction Y and the third direction Z are relative directions rather than absolute directions. In actual application, according to the different placement positions of the air inlet device, the first direction X, the second direction Y and the third direction Z can point to any direction in space, as long as the first direction X, the second direction Y and the third direction Z intersect. As a preferred, the first direction X, the second direction Y and the third direction Z are orthogonal to each other.

[0044] As shown in Figures 1 to 12As shown, the embodiment of the present application provides an air inlet device, which comprises a first pipeline 100, a second pipeline 110, a third pipeline 120 and a flange 200. The air outlet ends of the first pipeline 100 and the third pipeline 120 are connected to the flange 200, and the air outlet end of the second pipeline 110 is connected to the first pipeline 100. The gas in the first pipeline 100 is mixed with the gas in the second pipeline 110 before entering the flange 200, and then enters the flange 200 along the first pipeline 100. Meanwhile, in the embodiment of the present application, the flange 200 is surrounded by an air outlet 211, and the air pockets 212 corresponding to the first pipeline 100 and the third pipeline 120 are arranged inside the flange 200. The air pockets 212 are arranged in multiple and are arranged in sequence along the length direction (i.e. the second direction Y) of the air outlet 211. In the embodiment of the present application, at least the air pocket 212 in the middle is in communication with the air outlet end of the first pipeline 100, and the remaining air pockets 212 can be in communication with the third air outlet end 121 or the first air outlet end 102. When supplying gas, more mixed and uniform reaction gas with faster flow rate flows from the middle where the reaction is intense, so that the growth of the wafer is more uniform, the film thickness is reduced, and the resistance instability between the wafer and the wafer is reduced, the stability of the wafer is improved, and the quality of the wafer is ensured.

[0045] Reference Figures 1 to 3 As shown, in some embodiments, the air inlet device is used in a wafer growth device, and the main reaction gas and the auxiliary reaction gas are mixed in the growth chamber 300 of the wafer growth device after passing through the flange 200 from different gas paths. The present application mixes the main reaction gas and the auxiliary reaction gas before entering the flange 200, reduces the occurrence of mutual interference between gas flows, and reduces the occurrence of wafer instability. In the embodiment of the present application, the gas path is divided into the first pipeline 100, the second pipeline 110 and the third pipeline 120, and the main reaction gas is introduced into the first pipeline 100 and the third pipeline 120. The difference is that the first pipeline 100 is connected to the second pipeline 110 before entering the flange 200, and the auxiliary reaction gas is introduced into the second pipeline 110, so that the main reaction gas in the first pipeline 100 is mixed with the auxiliary reaction gas in the second pipeline 110 before entering the flange 200. The step of mixing the gas is placed before the gas enters the flange 200, which avoids the mixing of the gas at the air outlet 211 of the flange 200, effectively reduces the occurrence of gas interference in the growth cavity 320 of the wafer growth device, and improves the wafer quality.

[0046] In some embodiments, the first pipeline 100 includes a first inlet end 101 and a first outlet end 102, with the first inlet end 101 connected to the main reactant gas and the first outlet end 102 connected to the flange 200. The second pipeline 110 includes a second inlet end and a second outlet end 111, with the second inlet end of the second pipeline 110 connected to an auxiliary reactant gas and the second outlet end 111 connected to the first pipeline 100. The second outlet end 111 is located between the first inlet end 101 and the first outlet end 102 to achieve mixing of the main reactant gas and the auxiliary reactant gas before entering the flange 200. The third pipeline 120 includes a third inlet end and a third outlet end 121, with the third inlet end of the third pipeline 120 connected to the main reactant gas and the third outlet end 121 connected to the flange 200.

[0047] When a wafer is grown in growth chamber 300, the growth reaction in the center is more intense than that at the edges, requiring more reaction gas per unit time. Therefore, as Figures 1 to 3 As shown, in this application, the first pipeline 100 connected to the second pipeline 110 is located in the middle, ensuring that the air cavity 212 located at least in the middle of the flange 200 is connected to the first pipeline 100, so that the mixed main and auxiliary reaction gases can be directly introduced into the growth chamber 300, avoiding airflow disturbance caused by the mixing of main and auxiliary gases in the growth chamber 300, and increasing the flow rate of the reaction gas per unit time in the middle of the growth chamber 320.

[0048] like Figures 1 to 10 As shown, the flange 200 encloses and forms an outlet 211. For ease of description, in this application, the outlet direction of the outlet 211 is a first direction X, facing the semiconductor growth region, which in this application is the direction perpendicular to the plate surface of the flange 200. Simultaneously, multiple cavities 212 communicating with the outlet 211 are provided on the flange 200, each cavity 212 correspondingly connected to the first pipe 100 or the third pipe 120 to receive the reaction gas. For ease of description of the arrangement of the multiple cavities 212, in this application, the outlet 211 also has a second direction Y intersecting the first direction X. Specifically, the first direction X... The second direction Y can be orthogonally arranged, with multiple air cavities 212 spaced apart along the second direction Y. In this application, multiple air cavities 212 are spaced apart along the width direction of the flange 200. To increase the flow rate of the reaction gas in the middle of the growth chamber 320, at least the middle air cavity 212 is connected to the first pipeline 100, and the remaining air cavities 212 can be connected to the third outlet 121 of the third pipeline 120 or to the first outlet 102 of the first pipeline 100, so that the reaction gas with a larger flow rate per unit time after mixing flows into the middle of the growth chamber 320.

[0049] In specific implementation, refer to Figures 1 to 3 ,as well as Figure 10To further describe the connection relationship of the first pipeline 100, the third pipeline 120 and each air chamber 212, the air chambers 212 are classified in the application; the plurality of air chambers 212 include first air chambers 213 and second air chambers 214. To achieve the purpose of connecting the air chambers 212 located at least in the middle to the first pipeline 100, the first air chambers 213 and the second air chambers 214 are alternately arranged along the second direction Y; and the air chambers 212 located in the middle of the plurality of air chambers 212 are the first air chambers 213, the first air chambers 213 are connected to the first air outlet end 102 of the first pipeline 100, and the second air chambers 214 are connected to the air outlet end of the third pipeline 120.

[0050] In the embodiment of the application, among the plurality of air chambers 212 arranged at intervals along the second direction Y, the air chambers 212 located at least on both sides are the second air chambers 214; referring to Figures 1 to 3 , and Figure 10 , the application provides a specific example, in which seven air chambers 212 are provided, the first air chambers 213 and the second air chambers 214 are arranged at intervals among the seven air chambers 212, the air chambers 212 located at both ends are the second air chambers 214, and the air chambers 212 located in the middle are the first air chambers 213.

[0051] In the embodiment of the application, referring to Figures 2 to 9 , to facilitate the connection of the air chambers 212 and the air outlet 211, the application further provides a plurality of air outlet channels 230 in the flange 200, each air outlet channel 230 is connected to a corresponding air chamber 212 and connects the corresponding air chamber 212 to the air outlet 211.

[0052] The air outlet channel 230 is arranged in the flange 200, the flange 200 includes a base plate 210 and a cover plate 220, the cover plate 220 is arranged to connect the base plate 210, the air chamber 212 is formed on the side of the base plate 210 facing the cover plate 220, and the cover plate 220 seals the air chamber 212; the cover plate 220 is arranged to connect the base plate 210, and the air outlet channel 230 is arranged between the cover plate 220 and the base plate 210.

[0053] The air outlet channel 230 connecting the air outlet 211 and the air chamber 212 can be constructed by opening a through slot in the base plate 210 to connect the air chamber 212 and the air outlet 211, and then sealing the slot with the cover plate 220; the surface of the base plate 210 facing the cover plate 220 is provided with a first through slot 215 corresponding to the air chamber 212, the two ends of the first through slot 215 connect the air chamber 212 and the air outlet 211, the slot of the first through slot 215 faces the cover plate 220, the cover plate 220 seals the slot of the first through slot 215 along the first direction X, and the three inner walls of the first through slot 215 and the plate surface of the cover plate 220 form the air outlet channel 230.

[0054] In some embodiments, as Figure 11As shown, a through groove can be formed on the cover plate 220 to communicate the air cavity 212 and the air outlet 211, and then the groove is sealed by the base plate 210 to form the air outlet channel 230 communicating the air outlet 211 and the air cavity 212. The surface of the cover plate 220 facing the base plate 210 is provided with a second through groove 221 corresponding to the air cavity 212. The two ends of the second through groove 221 communicate the air cavity 212 and the air outlet 211, and the groove of the second through groove 221 faces the base plate 210. In the first direction X, the groove of the second through groove 221 is sealed by the base plate 210, and the three inner walls of the second through groove 221 and the surface of the base plate 210 form the air outlet channel 230.

[0055] In some embodiments, as Figure 12 As shown, a through groove can be formed on the cover plate 220 to communicate the air cavity 212 and the air outlet 211, and then the groove is sealed by the base plate 210 to form the air outlet channel 230 communicating the air outlet 211 and the air cavity 212. The surface of the cover plate 220 facing the base plate 210 is provided with a second through groove 221 corresponding to the air cavity 212. The two ends of the second through groove 221 communicate the air cavity 212 and the air outlet 211, and the groove of the second through groove 221 faces the base plate 210. In the first direction X, the groove of the second through groove 221 is sealed by the base plate 210, and the three inner walls of the second through groove 221 and the surface of the base plate 210 form the air outlet channel 230.

[0056] In this application, a through groove is formed on the base plate 210 to communicate the air cavity 212 and the air outlet 211, and then the groove is sealed by the cover plate 220 to form the air outlet channel 230 communicating the air outlet 211 and the air cavity 212.

[0057] Because the smaller the gap of the air outlet channel 230 in the flange 200, the slower the flow rate of the gas, which is also the source of the air flow interference problem. In this application, the size of the air outlet channel 230 is optimized, referring to Figure 5 、 Figure 7 and Figure 9, along the first direction X, the air outlet pipeline has a first side wall 231 and a second side wall 232, and the first side wall 231 and the second side wall 232 have a first size a therebetween, the first size a satisfies: 0.6mm≤a≤0.9mm, in specific implementation, the first size a can be selected as any value in 0.6mm, 0.7mm, 0.8mm, 0.9mm or a range value between any two values. For example, 0.6mm≤a≤0.7mm, 0.6mm≤a≤0.8mm, 0.7mm≤a≤0.8mm, 0.7mm≤a≤0.9mm, 0.8mm≤a≤0.9mm, etc. In specific implementation, the first side wall 231 and the second side wall 232 are selected to be arranged in parallel, and the first size a is the vertical distance between the first side wall 231 and the second side wall 232.

[0058] Along the second direction Y, the greater the length of the air pocket 212, the greater the air flow area, which is also the source of air flow interference problem. In the present application, the length of the air pocket 212 is optimized to reduce the air flow area and reduce the problem of air flow interference between areas, but if the length of the air pocket 212 is small, it will affect the air outlet flow rate, referring to Figure 10 , along the second direction Y, that is, along the length direction of the air pocket 212, the air pocket 212 has a second size b, the second size b satisfies: 56mm≤b≤60mm, in order to further solve the problem of air flow interference between different air pocket areas after air outlet, the present application further proposes the preferred range of the second size b: 57.5mm≤b≤59mm, which further reduces the air flow area under the premise of meeting the air outlet flow rate, and can effectively reduce the problem of air flow interference between areas.

[0059] In some embodiments, the second size b can also be selected as any value in 56mm, 57mm, 57.5mm, 57.96mm, 58mm, 58.96mm, 59mm, 60mm or an interval formed by any two values, for example, 56mm≤b≤57mm, 56mm≤b≤57.96mm, 56mm≤b≤58mm, 56mm≤b≤58.96mm, 56mm≤b≤59mm, 57mm≤b≤57.96mm, 57mm≤b≤58mm, 57mm≤b≤58.96mm, 57mm≤b≤59mm, 57mm≤b≤60mm, 57.96mm≤b≤58mm, 57.96mm≤b≤58.96mm, 57.96mm≤b≤59mm, 57.96mm≤b≤60mm, 58mm≤b≤58.96mm, 58mm≤b≤59mm, 58mm≤b≤60mm, 58.96mm≤b≤59mm, 58.96mm≤b≤60mm or 59mm≤b≤60mm, etc.

[0060] The embodiments of the present application also provide a wafer growth device based on the same inventive concept as the above-mentioned gas inlet device, referring to Figure 13 Embodiment two of the present application provides a wafer growth device, which comprises a growth chamber 300 and the gas inlet device of any one of the above-mentioned gas inlet devices, the growth chamber 300 has a growth cavity 320 with an opening 310 at one end, the flange 200 is connected to the growth chamber 300 and seals the opening 310, wherein the gas outlet 211 of the gas inlet device faces the opening 310 of the growth cavity 320.

[0061] In order to further demonstrate the superiority of the present application, the wafer growth device with the first size a of 0.81 mm and the wafer growth device with the first size a of 0.56 mm are selected, and the above-mentioned two wafer growth devices are used in the same growth environment, the wafer film thickness detection method is used, and 5 wafer pieces are selected respectively, for each wafer piece: from the top view, the notch mark is located at the 6 o'clock direction, the intersection of the 9 o'clock direction of the wafer piece and the edge of the wafer piece is the first point, and the intersection of the 3 o'clock direction of the wafer piece and the edge of the wafer piece is the second point, on the line segment between the first point and the second point, the film thickness of 17 points is detected in turn, and the results are recorded, which are shown in Tables 1 and 2:

[0062] Table 1: a is 0.81 mm, unit: mm

[0063]

[0064]

[0065] Table 2: a is 0.56 mm, unit: mm

[0066] 1 2 3 4 5 MAX MIN BIAS 1 49.8304 49.7293 49.7138 49.7967 49.8623 49.8623 49.7138 0.30％ 2 50.0704 50.0319 50.0268 50.1412 50.0913 50.1412 50.0268 0.23％ 3 49.6769 49.655 49.6258 49.7252 49.7109 49.7252 49.6258 0.20％ 4 49.2445 49.2166 49.1495 49.1794 49.2371 49.2445 49.1495 0.19％ 5 49.073 49.0068 48.9378 48.8639 49.0289 49.073 48.8639 0.43％ 6 49.3149 49.1954 49.1397 48.9627 49.2013 49.3149 48.9627 0.72％ 7 49.6346 49.442 49.4423 49.212 49.4438 49.6346 49.212 0.86％ 8 50.1655 49.9102 49.96 49.7112 49.8759 50.1655 49.7112 0.91％ 9 49.477 49.2001 49.2673 49.0441 49.1732 49.477 49.0441 0.88％ 10 50.2132 49.9661 50.0137 49.7855 49.9508 50.2132 49.7855 0.86％ 11 49.693 49.4998 49.5134 49.2572 49.4575 49.693 49.2572 0.88％ 12 49.1979 49.0721 49.0351 48.8532 49.0683 49.1979 48.8532 0.71％ 13 48.9223 48.8527 48.7875 48.7159 48.8801 48.9223 48.7159 0.42％ 14 49.1059 49.0675 49.0132 49.0628 49.1365 49.1365 49.0132 0.25％ 15 49.6183 49.6027 49.5655 49.6995 49.6835 49.6995 49.5655 0.27％ 16 50.059 50.0084 50.0154 50.1442 50.0791 50.1442 50.0084 0.27％ 17 50.1602 50.0634 50.0584 50.0439 50.0047 50.1602 50.0047 0.31％

[0067] Wherein, MAX is the maximum film thickness, MIN is the minimum film thickness, and BIAS is the maximum deviation amount, BIAS=(MAX-MIN) / MIN, it can be seen that after increasing the first size a of the gas outlet passage 230, the maximum deviation amount of the film thickness is obviously reduced, it can be seen that after increasing the gas outlet passage 230, the flow state of the reaction gas flow can be obviously improved, and the wafer piece with smaller film thickness deviation can be obtained.

[0068] The above describes the gas inlet device and the wafer growth device provided by the embodiments of the present application in detail, the specific examples are applied in this paper to describe the principles and implementation modes of the present application, and the above embodiment description is only used to help understand the method and core idea of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, the specific implementation mode and application range will be changed, and in view of the above, the content of the specification should not be understood as the limitation of the present application.

Claims

1. An air intake device characterized by, The application relates to an air inlet device. The air inlet device comprises: a first pipeline (100) having a first air inlet end (101) and a first air outlet end (102); a second pipeline (110) having a second air outlet end (111), wherein the second air outlet end (111) is located between the first air inlet end (101) and the first air outlet end (102), and the second pipeline (110) is connected to the first pipeline (100) through the second air outlet end (111); a third pipeline (120) having a third air outlet end (121); a flange (200) having an air outlet (211) formed by the flange (200), wherein the air outlet (211) has a first direction (X) and a second direction (Y) intersecting the first direction (X); the flange (200) has a plurality of air pockets (212) connected to the air outlet (211), the air pockets (212) are arranged along the second direction (Y) and are spaced apart, the air pocket (212) located in the middle is connected to the first air outlet end (102), and the remaining air pockets (212) are connected to the third air outlet end (121) or the first air outlet end (102); the flange (200) has a plurality of air outlet channels (230) corresponding to the air pockets (212), and the air outlet channels (230) are connected between the air pockets (212) and the air outlet (211); wherein, along the first direction (X), the air outlet channel (230) has opposite first and second side walls (231) and (232), the first side wall (231) and the second side wall (232) have a first size a, and the first size a satisfies 0.6mm<=a<=0.9mm; along the second direction (Y), the air pocket (212) has a second size b, and the second size b satisfies 56mm<=b<=60mm.

2. The air inlet device according to claim 1, wherein: the air pockets (212) comprise a plurality of first air pockets (213) and a plurality of second air pockets (214), the first air pockets (213) and the second air pockets (214) are alternately arranged along the second direction (Y); and among the air pockets (212), at least the air pocket (212) located in the middle is the first air pocket (213); the first air pocket (213) is connected to the first air outlet end (102), and the second air pocket (214) is connected to the third air outlet end (121).

3. The air inlet device according to claim 2, wherein: among the air pockets (212) arranged along the second direction (Y) and spaced apart, at least the air pockets (212) located on both sides are the second air pockets (214).

4. The air inlet device according to claim 1, wherein: The flange (200) comprises a base plate (210) and a cover plate (220), the cover plate (220) is connected to the base plate (210), the air pocket (212) is formed on the side of the base plate (210) facing the cover plate (220), and the cover plate (220) covers the air pocket (212).

5. The air inlet device according to claim 4, wherein: The side of the base plate (210) facing the cover plate (220) is provided with a first through groove (215) corresponding to the air pocket (212), the first through groove (215) is communicated between the air pocket (212) and the air outlet (211), and the cover plate (220) covers the first through groove (215) along the first direction (X) to form the air outlet channel (230); or, The side of the cover plate (220) facing the base plate (210) is provided with a second through groove (221) corresponding to the air pocket (212), the second through groove (221) is communicated between the air pocket (212) and the air outlet (211), and the base plate (210) covers the opening (310) of the second through groove (221) along the first direction (X) to form the air outlet channel (230); or, The side of the cover plate (220) facing the base plate (210) is provided with a third through groove (222), and the side of the base plate (210) facing the cover plate (220) is provided with a fourth through groove (216), the third through groove (222) and the fourth through groove (216) are both communicated between the air pocket (212) and the air outlet (211), and the third through groove (222) and the fourth through groove (216) are oppositely arranged along the first direction (X) to form the air outlet channel (230).

6. The air inlet device according to claim 1, wherein: The first size a satisfies 0.8mm≤a≤0.9mm.

7. The air inlet device according to claim 1, wherein: The second size b satisfies 57.5mm≤b≤59mm.

8. A wafer growth device, comprising the air inlet device according to any one of claims 1-7.

9. The wafer growth device according to claim 8, further comprising a growth chamber (300) having a growth cavity (320) with an open end (310); and the flange (200) is connected to the growth chamber (300) and covers the open end (310). ​ ​ ​

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