A CuO:Te material with strong ultraviolet luminescence
CuO:Te material was prepared by mixing CuO and Sb2Te3 powder in a specific molar ratio and mechanically pressing and high-temperature annealing, which solved the problem of poor luminescence characteristics of CuO semiconductor materials, and achieved efficient improvement of ultraviolet luminescence intensity and photoelectric conversion efficiency. , has commercial application potential.
Patent Information
- Application Number
- CN202311088715.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-08-28
- Publication Date
- 2024-12-27
- Estimated Expiration
- Not applicable · inactive patent
AI Technical Summary
Due to its high melting point and many defects, the nanocrystalline and amorphous structures prepared have poor luminescence characteristics, which limits its use in optoelectronic applications, especially in laser applications. Insufficient luminescence intensity.
CuO:Te material was prepared by mixing CuO powder with Sb2Te3 powder in a specific molar ratio and grinding, mechanical pressing and high-temperature annealing, and Te doping modification increased its ultraviolet luminescence intensity.
The photoelectric and electro-optical conversion efficiency of CuO is significantly improved, and the ultraviolet luminescence intensity reaches 180,000 a.u., which is far higher than the undoped CuO, and has the potential for commercial application.
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Figure CN117186881B_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of semiconductor photoelectric materials, and in particular relates to a CuO:Te material with strong ultraviolet luminescence. Background Art
[0002] Semiconductor materials play a vital role in the field of optoelectronics. However, the high production cost of high-performance single-crystal semiconductor materials limits their large-scale application. Amorphous and nanocrystalline semiconductor materials are suitable for large-scale applications due to their simple production process and low manufacturing cost.
[0003] Copper oxide (CuO) is a black powder with good thermal and photochemical stability, non-toxic and inexpensive preparation methods, high light absorption coefficient and good photoelectric properties. It is an important narrow bandgap (1.2-1.4 eV) p-type semiconductor material. However, due to its high melting point (1446°C), CuO semiconductor materials prepared by magnetron sputtering, gel method and hydrothermal method are mostly nanocrystalline and amorphous structures, with many defects, serious carrier recombination and poor luminescence properties, which seriously limit its photoelectric applications.
[0004] Patent ZL202110820587.0 improves the luminescence performance of CuO by SeS2 doping. Compared with pure CuO, its luminescence performance can be improved by up to about 14 times, and the luminescence performance needs to be further improved. Patent ZL202110820254.8 improves the luminescence performance of CuO by doping MoS2. Compared with pure CuO, its luminescence performance can be improved by up to 108 times. The luminescence performance is significantly improved compared with SeS2 doping, but the luminescence peak of the material obtained by this method is 520nm (intensity is 21741a.u.), which is green light. The luminescence peak of the semiconductor optoelectronic material determines the absorption wavelength range of the optoelectronic device made with it (such as solar cells and photodetectors, light less than the wavelength of the luminescence peak can be absorbed by the device) or the wavelength of the emitted light (such as light-emitting diodes and semiconductor lasers). Especially for lasers, good monochromaticity is required, that is, the smaller the half-height width of the luminescence peak, the better. On the other hand, the higher the luminescence intensity of the semiconductor optoelectronic material, the higher the photoelectric and electro-optical conversion efficiency of the material. The half-width of the CuO-doped MoS2 emission peak is relatively wide, and its monochromaticity is poor for applications such as lasers, and its photoluminescence intensity is not high, which greatly limits its use. Summary of the invention
[0005] The purpose of the present invention is to overcome the shortcomings of CuO semiconductor materials and provide a CuO:Te material with strong ultraviolet luminescence.
[0006] To achieve the above purpose, the CuO:Te material with strong ultraviolet luminescence of the present invention is obtained by fully mixing CuO powder and Sb2Te3 powder in a molar ratio of 10:1.0-2.0, grinding and pressing, and then annealing at 800-900°C for 10-15 minutes in an air environment.
[0007] Among the above materials, it is preferred to fully mix CuO powder and Sb2Te3 powder in a molar ratio of 10:1.0-1.2, grind them and then press them into tablets.
[0008] The tabletting is carried out by maintaining a pressure of 10 to 15 MPa for 8 to 10 seconds to form a disc with a thickness of 0.8 to 1.2 mm.
[0009] Among the above materials, annealing at 900° C. for 10 to 15 minutes in an air environment is preferred.
[0010] The beneficial effects of the present invention are as follows:
[0011] 1. The present invention mixes CuO and Sb2Te3 powders in different molar ratios, and prepares a CuO:Te material with strong ultraviolet luminescence by grinding, mechanical pressing, and high-temperature annealing. The present invention makes the ultraviolet luminescence intensity of the obtained CuO:Te material reach up to 180,000 a.u. or more through Te doping modification, which is about 209 times that of annealed pure CuO, greatly improving the photoelectric and electro-optical conversion efficiency of CuO. This material is expected to become a new material in the field of optoelectronic materials.
[0012] 2. The CuO:Te material of the present invention has the advantages of high luminescence intensity, abundant natural reserves, low preparation cost, simple process, etc., and has the potential for commercial application. BRIEF DESCRIPTION OF THE DRAWINGS
[0013] Figure 1 This is the EDS spectrum of the CuO:Te material prepared in Example 1.
[0014] Figure 2 It is the XRD diagram of annealed CuO, annealed Sb2Te3 and CuO:Te material prepared in Example 1.
[0015] Figure 3 It is the PL spectrum of annealed CuO, annealed Sb2Te3 and CuO:Te material prepared in Example 1.
[0016] Figure 4 It is the XRD diagram of annealed CuO, annealed Sb2Te3 and CuO:Te material prepared in Example 2.
[0017] Figure 5 It is the PL spectrum of annealed CuO, annealed Sb2Te3 and CuO:Te material prepared in Example 2.
[0018] Figure 6 These are the XRD diagrams of annealed CuO, annealed Sb2Te3 and the CuO:Te material prepared in Example 3.
[0019] Figure 7 It is the PL spectrum of annealed CuO, annealed Sb2Te3 and CuO:Te material prepared in Example 3.
[0020] Figure 8 These are the XRD diagrams of annealed CuO, annealed Sb2Te3 and the CuO:Te material prepared in Example 4.
[0021] Fig. 9 It is the PL spectrum of annealed CuO, annealed Sb2Te3 and CuO:Te material prepared in Example 4. DETAILED DESCRIPTION
[0022] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but the protection scope of the present invention is not limited to these embodiments.
[0023] Example 1
[0024] The CuO powder and Sb2Te3 powder were fully ground and mixed at a molar ratio of 10:1, and then pressed using a tablet press at a pressure of 10 MPa for 8 to 10 seconds to obtain a sample with a thickness of 1 mm. The obtained sample was placed on quartz glass and annealed in an air environment at an annealing temperature of 900°C and an annealing time of 10 minutes to obtain a CuO:Te material.
[0025] First, the annealed samples were tested by EDS. Figure 1 The element content of the annealed sample tested by EDS is given. The atomic percentages of Cu, O, and Te in the annealed sample are 42.9%, 52.1%, and 5.0%, respectively, while the Sb element content is 0.0%, indicating that the Sb element volatilized and left the sample during the annealing process at 900°C. The results show that the prepared material is Te-doped CuO, that is, CuO:Te.
[0026] The obtained materials were characterized by XRD and PL. Figure 2 and Figure 3 . Figure 2 XRD tests show that the main diffraction peaks of CuO (110), (11-1), and (111) all shift after Sb2Te3 doping annealing, indicating that Te is doped into the CuO lattice and appears as CuO:Te nanocrystals. Figure 3The PL test results show that the annealed pure CuO has photoluminescence at about 460nm, with a weak intensity of about 890; the annealed pure Sb2Te3 powder also has a weak luminescence, with an intensity of about 10000, while the CuO:Te material obtained after annealing the sample with a molar ratio of CuO:Sb2Te3=10:1 shows strong photoluminescence at 445nm, with an intensity of about 95568. The reason for the strong photoluminescence is that the Te element is doped into the CuO lattice to improve the luminescence characteristics of CuO. The ultraviolet photoluminescence intensity of the CuO:Te material obtained in this example can reach about 107 times that of the annealed pure CuO.
[0027] Example 2
[0028] The CuO powder and Sb2Te3 powder were fully ground and mixed at a molar ratio of 10:1.2, and then pressed using a tablet press at a pressure of 10 MPa for 6 to 8 seconds to obtain a sample with a thickness of 1 mm. The obtained sample was placed on quartz glass and annealed in an air environment at an annealing temperature of 900°C and an annealing time of 10 minutes to obtain a CuO:Te material.
[0029] The obtained composite material was characterized by XRD and PL. Figure 4 and Figure 5 . Figure 4 XRD tests show that the main diffraction peaks of copper oxide (110), (11-1), and (111) all shift after Sb2Te3 doping annealing, shifting 0.4 degrees to the small angle direction, indicating that Te is doped into the CuO lattice and appears as CuO:Te nanocrystals. Figure 5 The PL test results show that the CuO:Te material obtained after annealing the sample with a molar ratio of CuO:Sb2Te3=10:1.2 exhibits strong photoluminescence at 445nm with an intensity of about 185534, and its ultraviolet photoluminescence intensity is about 209 times that of the annealed pure CuO.
[0030] Example 3
[0031] The CuO powder and Sb2Te3 powder were fully ground and mixed at a molar ratio of 5:1, and then pressed using a tablet press at a pressure of 10 MPa for 6 to 8 seconds to obtain a sample with a thickness of 1 mm. The obtained sample was placed on quartz glass and annealed in an air environment at an annealing temperature of 800°C and an annealing time of 10 minutes to obtain a CuO:Te material.
[0032] The obtained composite material was characterized by XRD and PL. Figure 6 and Figure 7 . Figure 6XRD tests show that the main diffraction peaks of copper oxide (110), (11-1), and (111) all shift after Sb2Te3 doping annealing, indicating that Te is doped into the CuO lattice and appears as CuO:Te nanocrystals. Figure 7 The PL test results show that the CuO:Te material obtained after annealing the sample with a molar ratio of CuO:Sb2Te3=5:1 exhibits strong photoluminescence at 445nm with an intensity of about 30992. Its ultraviolet photoluminescence intensity is about 35 times that of the annealed pure CuO.
[0033] Example 4
[0034] The CuO powder and Sb2Te3 powder were fully ground and mixed at a molar ratio of 5:1, and then pressed using a tablet press at a pressure of 10 MPa for 6 to 8 seconds to obtain a sample with a thickness of 1 mm. The obtained sample was placed on quartz glass and annealed in an air environment at an annealing temperature of 900°C and an annealing time of 10 minutes to obtain a CuO:Te material.
[0035] The obtained composite material was characterized by XRD and PL. Figure 8 and Fig. 9 . Figure 8 XRD tests show that the main diffraction peaks of copper oxide (110), (11-1), and (111) all shift after Sb2Te3 doping annealing, indicating that Te is doped into the CuO lattice and appears as CuO:Te nanocrystals. Fig. 9 The PL test results show that the CuO:Te material obtained after annealing the sample with a molar ratio of CuO:Sb2Te3=5:1 exhibits strong photoluminescence at 445nm with an intensity of about 78334, and its ultraviolet photoluminescence intensity is about 88 times that of the annealed pure CuO.
Claims
1. A CuO:Te material, characterized in that: The material is obtained by fully mixing CuO powder and Sb2Te3 powder according to a molar ratio of 10:1.0-2.0, grinding and pressing, and then annealing at 800-900°C for 10-15 minutes in an air environment; the material exhibits strong photoluminescence at 445 nm.
2. The CuO:Te material according to claim 1, characterized in that: The CuO powder and Sb2Te3 powder were fully mixed in a molar ratio of 10:1.0-1.2, ground and pressed into tablets.
3. The CuO:Te material according to claim 1 or 2, characterized in that: The tabletting is carried out by maintaining a pressure of 10 to 15 MPa for 8 to 10 seconds to form a round tablet with a thickness of 0.8 to 1.2 mm.
4. The CuO:Te material according to claim 1 or 2, characterized in that: Anneal at 900°C in air environment for 10 to 15 minutes.