Method, apparatus, device, and medium for water vapor control of physical vapor deposition

Abstract

The application discloses a water vapor control method, device, equipment and medium of physical vapor deposition, and generally relates to the technical field of computers. The method comprises the following steps: when a carrier plate for performing physical vapor deposition enters a cavity, determining a real-time value of water vapor concentration in the cavity, a change rate of the real-time value of water vapor concentration and an estimated remaining working time length of the carrier plate in the cavity; determining an estimated water vapor concentration result in the cavity within the estimated remaining working time length according to the real-time value of water vapor concentration in the cavity and the change rate; in the case that the estimated water vapor concentration result exceeds a target water vapor concentration range, determining a target adjustment water vapor amount for keeping the water vapor concentration in the cavity within the target water vapor concentration range after adjusting the water vapor concentration in the cavity, and adjusting the water vapor concentration in the cavity through a target adjustment mode according to the target adjustment water vapor amount, so that the water vapor concentration in the cavity is kept within the target water vapor concentration range.

Description

Technical Field

[0001] The present disclosure generally relates to the field of computer technology, and more particularly to a method, device, apparatus, and medium for controlling water vapor in physical vapor deposition. Background Art

[0002] With the continuous development of battery technology in new energy technology, heterojunction battery (HJT) is a type of battery for new energy batteries.

[0003] The physical vapor deposition (PVD) process is one of the important steps in making heterojunction batteries. For example, the implementation method of the ITO film in the PVD process in the HJT battery includes: generating an indium tin oxide (ITO) film by coating. In the above-mentioned process of generating the ITO film, the final quality of the ITO film will be affected by different factors, and water vapor is one of the key influencing factors. Generally, during the PVD process, the carrier in the cavity will be coated with an ITO film, and the ITO film will absorb water. Therefore, after the carrier leaves the cavity, it will absorb water vapor under normal temperature. The water absorption of the carrier used multiple times will increase the water vapor concentration in the cavity, which will affect the subsequent coating of the ITO film. Therefore, in the actual production process, the water vapor concentration needs to be controlled within a preset range to ensure the quality of the ITO film.

[0004] In related technologies, when the water vapor concentration is low, it is necessary to manually open the water vapor MFC to introduce water vapor; when the water vapor concentration is too high, it is also necessary to manually open the cold trap including a group of coils, and manually control the use time of the cold trap so that the water vapor condenses into frost and adheres to the coils.

[0005] However, it can be seen from the above operation process that when the water vapor concentration is not appropriate, manual adjustment of the water vapor concentration is required, which may easily lead to an unstable PVD process. Summary of the Invention

[0006] In view of the above-mentioned defects or deficiencies in the prior art, it is desired to provide a water vapor control method, device, equipment and medium for physical vapor deposition, which can solve the problem that when the water vapor concentration is inappropriate, manual adjustment of the water vapor concentration is required, which leads to instability of the PVD process, thereby improving the work efficiency of the PVD process to a certain extent.

[0007] In a first aspect, a method for controlling water vapor in physical vapor deposition is provided, the method comprising:

[0008] After a carrier for performing physical vapor deposition enters a chamber, determining a real-time value of water vapor concentration in the chamber, a rate of change of the real-time value of water vapor concentration, and an estimated remaining operating time of the carrier in the chamber;

[0009] Determining an estimated water vapor concentration result in the cavity within the estimated remaining working time according to the real-time value of the water vapor concentration in the cavity and the rate of change;

[0010] If the estimated water vapor concentration result exceeds the target water vapor concentration range, determining a target adjusted water vapor amount for adjusting the water vapor concentration in the cavity so that the water vapor concentration remains within the target water vapor concentration range, and adjusting the water vapor concentration in the cavity using a target adjustment method based on the target adjusted water vapor amount so that the water vapor concentration in the cavity remains within the target water vapor concentration range;

[0011] Among them, different physical vapor deposition materials correspond to different target water vapor concentration ranges.

[0012] In the present application, after a carrier for performing physical vapor deposition enters a cavity, the real-time value of the water vapor concentration in the cavity, the rate of change of the real-time value of the water vapor concentration (including the rate of positive increase) and the estimated remaining working time of the carrier in the above-mentioned cavity are determined. Then, based on the above-mentioned real-time value and rate of change of the water vapor concentration, the estimated water vapor concentration result in the cavity within the above-mentioned estimated remaining working time is determined; finally, in the case that the above-mentioned estimated water vapor concentration result exceeds the target water vapor concentration range, the target adjusted water vapor amount (different physical vapor deposition materials correspond to different target water vapor concentration ranges) after adjusting the water vapor concentration is determined, and according to the target adjusted water vapor amount, the water vapor concentration in the above-mentioned cavity is adjusted by the target adjustment method so that the water vapor concentration in the cavity is maintained within the target water vapor concentration range. In this way, the estimated water vapor concentration results can be obtained through the various parameters of physical vapor deposition in the cavity, so that before the real-time value of the water vapor concentration exceeds the target water vapor concentration range, it can be detected in time and the water vapor concentration in the cavity can be adjusted in time, so that the real-time value of the water vapor concentration in the cavity can always be maintained within the ideal water vapor concentration range (that is, the above-mentioned target water vapor concentration range) through automatic control, thereby greatly improving the work efficiency of physical vapor deposition.

[0013] In a second aspect, a water vapor control device for physical vapor deposition is provided, the device comprising:

[0014] a determination module, configured to determine, after a carrier for performing physical vapor deposition enters a chamber, a real-time value of water vapor concentration in the chamber, a rate of change of the real-time value of water vapor concentration, and an estimated remaining operating time of the carrier in the chamber;

[0015] The determining module is further configured to determine an estimated water vapor concentration result in the cavity within the estimated remaining working time according to the real-time value of the water vapor concentration in the cavity and the change rate.

[0016] The executing module is configured to determine a target adjusted water vapor amount that enables the water vapor concentration in the cavity to remain within the target water vapor concentration range after adjusting the water vapor concentration in the cavity when the estimated water vapor concentration result exceeds the target water vapor concentration range, and adjust the water vapor concentration in the cavity by a target adjustment manner according to the target adjusted water vapor amount, so that the water vapor concentration in the cavity remains within the target water vapor concentration range.

[0017] Different physical vapor deposition materials correspond to different target water vapor concentration ranges.

[0018] In a third aspect, a computer device is provided, which includes a memory, a processor, and a computer program stored in the memory and executable on the processor, and when the processor executes the program, the method in the first aspect is implemented.

[0019] In a fourth aspect, a computer readable storage medium is provided, which stores a computer program, and when the program is executed by a processor, the method in the first aspect is implemented.

[0020] In a fifth aspect, a computer program product is provided, which includes instructions executable by a processor, and when the instructions are executed by the processor, the method in the first aspect is implemented.

[0021] Additional aspects and advantages of the present application will be in part apparent and in part pointed out hereinafter. BRIEF DESCRIPTION OF DRAWINGS

[0022] Other features, objects, and advantages of the application will become more apparent from the following detailed description when read in conjunction with the accompanying drawings:

[0023] Figure 1 A flowchart of a physical vapor deposition water vapor control method provided by an embodiment of the present application is shown in the figure;

[0024] Figure 2 A coil structure schematic diagram in related art provided by an embodiment of the present application is shown in the figure;

[0025] Figure 3 A coil structure schematic diagram provided by an embodiment of the present application is shown in the figure;

[0026] Figure 4A schematic structural diagram of a water vapor control device for physical vapor deposition provided in an embodiment of the present application;

[0027] Figure 5 A schematic diagram of the structure of a computer device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0028] The present application will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely for the purpose of explaining the relevant invention and are not intended to limit the invention. It should also be noted that, for ease of description, only portions relevant to the invention are shown in the accompanying drawings.

[0029] It should be noted that, in the absence of conflict, the embodiments and features of the embodiments in this application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0030] The following explanations are given for the terms that appear in the examples of this application:

[0031] 1. Physical Vapor Deposition (PVD)

[0032] Physical vapor deposition (PVD) is a process that uses physical processes to transfer atoms or molecules from a sputtering cathode or evaporation source to the surface of a substrate (such as a wafer). This allows particles with specific properties (such as high strength, wear resistance, heat dissipation, and corrosion resistance) to be deposited onto a substrate with lower performance, resulting in improved performance. Basic PVD processing methods include vacuum evaporation, sputtering, and ion plating.

[0033] 2. Mass flow controller (MFC)

[0034] Mass flow meters can be used to control the flow rate of each component gas entering the vacuum chamber. The usual units are Slm (L / min), sccm (mL / min), etc.

[0035] The following explains the application scenarios in the embodiments of the present application:

[0036] The process flow of the HJT cell includes the following steps: texturing, plasma enhanced chemical vapor deposition (PECVD), PVD, and screen printing. The PVD process is as follows: in a closed cavity, an ITO film is grown on the surface of the cell by using a magnetron sputtering method. The quality of the ITO film is mainly evaluated from the optical and electrical dimensions. However, during the generation of the ITO film, the quality of the ITO film is affected by key factors such as material performance, power supply power, oxygen concentration, water vapor concentration, and hydrogen concentration. Among these factors, the controllability of the material, power supply power, oxygen concentration, and hydrogen concentration is relatively strong, so the variation of these process parameters is relatively accurate.

[0037] However, the water vapor concentration is affected by many factors. For example, when the number of times the carrier disc is used increases, the film thickness increases, and accordingly, the water vapor carried by the carrier disc increases, which eventually leads to an increase in the water vapor concentration. The factors affecting the water vapor are not constant but change cumulatively, and the influence of the water vapor changes cumulatively. Therefore, it is difficult to accurately control the water vapor concentration within a certain range.

[0038] In the related art, the PVD process requires manual continuous monitoring of the real-time water vapor concentration, predicting the change of the water vapor concentration, and manually adjusting the water vapor concentration in the cavity in a timely manner. When it is predicted that the water vapor concentration will be less than the preset water vapor concentration (for example, during the process of coating ITO films on both sides of the cell), the mass flow controller (MFC) for controlling the water vapor can be manually turned on to increase the water vapor concentration in the cavity, or a carrier disc with a high number of coating times can be used to carry a new carrier disc with a low number of coating times. When it is predicted that the water vapor concentration will be greater than the preset water vapor concentration, a cold trap can be manually turned on to reduce the water vapor concentration in the cavity by directly subliming the water vapor in the cavity.

[0039] However, in the above process of increasing and reducing the water vapor concentration, manual prediction of the water vapor concentration in the cavity and manual adjustment of the water vapor concentration in the cavity are required, which can easily cause the PVD process to be unstable.

[0040] Therefore, the present application provides a physical vapor deposition water vapor control method, device, equipment, and medium, which can solve the problem that manual adjustment of the water vapor concentration is required when the water vapor concentration is not suitable, thereby causing the PVD process to be unstable, and improve the working efficiency of the PVD process to a certain extent.

[0041] Figure 1 This is a flow chart of a water vapor control method for physical vapor deposition provided by an embodiment of the present application. The execution subject of this method can be a computer or other terminal. Figure 1 As shown, the method includes the following steps 301 to 303:

[0042] Step 301: After a carrier for performing physical vapor deposition enters a chamber, determine a real-time value of water vapor concentration in the chamber, a rate of change of the real-time value of water vapor concentration, and an estimated remaining working time of the carrier in the chamber.

[0043] In the embodiment of the present application, the above-mentioned chamber can be used as a chamber for performing a PVD process.

[0044] For example, the cavity may be a cavity for a PVD process in a battery manufacturing process.

[0045] In the embodiment of the present application, the above-mentioned cavity is a closed cavity.

[0046] Exemplarily, the cavity may be a vacuum chamber.

[0047] In the embodiment of the present application, the above-mentioned real-time water vapor concentration value refers to the real-time water vapor concentration in the cavity. That is, the above-mentioned real-time water vapor concentration value is used to represent the water vapor concentration in the cavity.

[0048] It is understandable that in the PVD process, there are various types of gases, and water vapor is only one of them. In the embodiment of the present application, in order to realize automatic control of water vapor concentration, it is necessary to measure the real-time value of the separate water vapor concentration.

[0049] In one example, the real-time value of water vapor concentration can be the partial pressure of water (H2O) molecules in a vacuum wall chamber. Generally, the real-time value of water vapor concentration in the chamber can be measured by a residual gas analyzer (RGA). The principle of the residual gas analyzer for testing the real-time value of water vapor concentration in the chamber is to take samples from the inside of the chamber, ionize them, and then use a mass spectrometer to perform mass separation and counting. Finally, the partial pressure ratios of various gases are given, including the real-time value of water vapor concentration in the chamber.

[0050] Furthermore, the real-time value of the water vapor concentration in the above-mentioned cavity can be used to indicate the real-time value of the water vapor concentration in the cavity at the moment when the carrier enters the cavity, that is, the initial water vapor concentration value in the cavity at the moment when the carrier enters the cavity; the real-time value of the water vapor concentration in the above-mentioned cavity can also be used to indicate the real-time value of the water vapor concentration at a certain moment in the PVD process after the carrier enters the cavity.

[0051] It is understandable that the water vapor concentration in the above-mentioned cavity is in a fluctuating state. Therefore, it is necessary to detect the water vapor concentration in the cavity throughout the entire PVD process to ensure that the real-time value of the water vapor concentration in the cavity does not exceed the target water vapor concentration range.

[0052] It is understandable that, as can be seen from the above, multiple PVD processes may be performed in the chamber, and not every PVD process will cause the water vapor concentration to exceed the target water vapor concentration range (i.e., the ideal water vapor concentration range, which will be described in detail later). In the initial several PVD processes, there may be insufficient water vapor concentration, and after multiple PVD processes, the water vapor concentration may exceed the target water vapor concentration range. In both cases, the concentration in the chamber needs to be adjusted. Specifically, to ensure the accuracy and timeliness of adjusting the water vapor concentration in the chamber, the real-time value of the water vapor concentration in the chamber needs to be determined each time the carrier undergoing PVD enters the chamber, so as to facilitate the subsequent steps of adjusting the water vapor concentration.

[0053] It should be noted that, in the above PVD process, the change direction of the real-time value of the water vapor concentration includes: positive increase.

[0054] In the embodiment of the present application, the rate of change of the above-mentioned real-time value of water vapor concentration refers to: a rate of positive increase.

[0055] It can be understood that, generally, during the PVD process, the rate of change of the real-time value of the water vapor concentration is stable and does not change significantly. Therefore, the rate of change of the real-time value of the water vapor concentration can be represented by the rate of change of the water vapor concentration in the cavity when the carrier enters the cavity.

[0056] In the embodiment of the present application, the estimated remaining working time of the carrier in the chamber is used to indicate: during a PVD process, the time from the moment the carrier enters the chamber to the moment the PVD process ends.

[0057] It is understandable that, generally, since the speed of the PVD process (such as the process of generating ITO film by magnetron sputtering) is constant, and the area of ​​the product that needs to perform the PVD process is also known, the duration of a single PVD process can be estimated.

[0058] Step 302: Determine an estimated water vapor concentration result in the cavity within the estimated remaining working time based on the real-time value of the water vapor concentration in the cavity and the change rate.

[0059] In the embodiment of the present application, the above-mentioned estimated water vapor concentration result is: the water vapor concentration in the cavity after the current PVD process is completed.

[0060] It can be understood that from the above content, the above-mentioned rate of change is constant, and the real-time value of the carrier entering the cavity and the estimated remaining working time are also known. Therefore, the water vapor result in the cavity can be obtained after the PVD process is completed.

[0061] In one example, the real-time value of the water vapor concentration in the cavity is C0, the rate of change of the real-time value of the water vapor concentration is v, and the estimated remaining working time of the carrier in the cavity is t. Then, the estimated water vapor concentration result is: C0+v×t.

[0062] Step 303: When the estimated water vapor concentration result exceeds the target water vapor concentration range, determine the target adjusted water vapor amount after adjusting the water vapor concentration in the cavity so that the water vapor concentration remains within the target water vapor concentration range, and adjust the water vapor concentration in the cavity according to the target adjusted water vapor amount through the target adjustment method so that the water vapor concentration in the cavity remains within the target water vapor concentration range.

[0063] In the embodiment of the present application, the above-mentioned target water vapor concentration range is used to represent the ideal water vapor concentration range in the physical vapor deposition process.

[0064] Exemplarily, the target water vapor concentration range refers to the normal applicable range of the PVD process. For example, if the PVD process is used to coat an ITO film on a battery, the target water vapor concentration range indicates the water vapor concentration range within which the quality of the ITO film can be maintained when the PVD process is used to coat the battery.

[0065] It can be understood from the above content that the water vapor in the above-mentioned cavity changes dynamically, and there are two situations: the water vapor concentration is too high (greater than the highest value of the target water vapor concentration range) and the water vapor concentration is too low (less than the lowest value of the target water vapor concentration range).

[0066] Furthermore, it can be seen from the above content that in the relevant technology, in order to keep the real-time value of water vapor concentration always within the target water vapor concentration range, it is necessary to manually predict the moment when the real-time value of water vapor concentration exceeds the target water vapor concentration range in the cavity, and to ensure that during the manual adjustment of the water vapor concentration, the real-time value of water vapor concentration always does not exceed the target water vapor concentration range.

[0067] In an embodiment of the present application, in order to automatically control the above-mentioned real-time value of water vapor concentration so that the real-time value of water vapor concentration does not exceed the target water vapor concentration range at all times, the real-time value of water vapor concentration when the carrier enters the cavity is required, and the rate of change of the real-time value of water vapor concentration and the estimated remaining working time of the carrier are detected, so as to obtain in advance whether the estimated water vapor concentration result corresponding to the PVD process will exceed the target water vapor concentration range.

[0068] In the embodiment of the present application, the above-mentioned target adjustment of water vapor amount is used to indicate: when the water vapor concentration in the cavity is insufficient, the amount of water vapor that needs to be introduced into the cavity; or when there is too much water vapor in the cavity, the amount of water vapor in the cavity needs to be reduced.

[0069] Optionally, in an embodiment of the present application, when the above-mentioned target water vapor concentration range includes a maximum threshold and a minimum threshold, the aforementioned content "when the estimated water vapor concentration result exceeds the target water vapor concentration range, determining the target adjusted water vapor amount after adjusting the water vapor concentration in the above-mentioned cavity so that the water vapor concentration remains within the target water vapor concentration range" includes: when the above-mentioned estimated water vapor concentration result is lower than the above-mentioned minimum threshold, determining the target adjusted water vapor amount after increasing the water vapor concentration in the above-mentioned cavity so that the water vapor concentration remains within the above-mentioned target water vapor concentration range; or, when the above-mentioned estimated water vapor concentration result is higher than the above-mentioned maximum threshold, determining the target adjusted water vapor amount after reducing the water vapor concentration in the above-mentioned cavity so that the water vapor concentration remains within the above-mentioned target water vapor concentration range.

[0070] Further, optionally, in the embodiment of the present application, as described above, the real-time value of the water vapor concentration in the cavity is the initial value C0(10 -3 pa), the change rate of the real-time value of the water vapor concentration is the change rate v(10 -3 Pa / min), the estimated remaining working time of the carrier in the cavity is the estimated remaining working time t (min) from the time the carrier enters the cavity to the time it leaves the cavity, and the target water vapor concentration range is C1(10 -3 pa), to C2(10 -3 pa):

[0071] When C0+v×t<C1, the target adjusted water vapor amount is determined so that the water vapor concentration in the above-mentioned cavity is increased so that the above-mentioned water vapor concentration is maintained within the above-mentioned target water vapor concentration range; or, when C0+v×t>C2, the target adjusted water vapor amount is determined so that the above-mentioned water vapor concentration is maintained within the above-mentioned target water vapor concentration range after the water vapor concentration in the above-mentioned cavity is reduced.

[0072] For example, the maximum threshold of the target water vapor concentration range is C2(10 -3 pa), the minimum threshold of the above target water vapor concentration range is C1(10 -3 pa).

[0073] In the embodiment of the present application, the target adjustment method includes: increasing the water vapor input, or reducing the water vapor input by using the target coil of the cold trap.

[0074] In the embodiments of the present application, the above target adjustment methods are all automatic control adjustment methods.

[0075] Exemplarily, the above-mentioned method of increasing the water vapor supply amount can be to increase the water vapor supply amount by adjusting the mass flow meter MFC automatic control so that the real-time water vapor concentration value remains within the target water vapor concentration range. For detailed description, please refer to the subsequent description and will not be repeated here.

[0076] In the embodiment of the present application, the target coil is at least one coil among the N coils in the cold trap.

[0077] In an embodiment of the present application, the cold trap may include multiple groups of coils, that is, N coils.

[0078] Optionally, in an embodiment of the present application, each of the N coils is equipped with a separate valve.

[0079] Exemplarily, the N coils are arranged in parallel when the individual valves are not opened, and the M coils are arranged in series after the individual valves of M of the N coils are opened. Each of the N coils has an independent operation function, N is a positive integer greater than or equal to 2, and M is a positive integer less than or equal to N and greater than 2.

[0080] It should be noted that in the embodiment of the present application, the diameter of each coil in the N coils in the cold trap can be the same as or smaller than the diameter of the coil in the related art. At the same time, the cold trap in the related art only includes one coil, while the cold trap in the embodiment of the present application includes at least one coil.

[0081] In one embodiment, each coil can work independently. When the diameter of each of the N coils in the above-mentioned cold trap becomes smaller than the diameter of the coil in the related art, the area of ​​the individual coil that adsorbs water vapor becomes smaller, thereby reducing the ability of the individual coil to adsorb water vapor (condense water vapor) compared to the ability of the cold trap in the previous related art to adsorb water vapor through only one coil. Then, by gradually controlling one to multiple coils among the N coils to start working, the real-time value of the water vapor concentration in the cavity can be changed in small amounts and multiple times, that is, flexible change, and the real-time value of the water vapor concentration in the cavity can be controlled more accurately.

[0082] It can be understood that the principle of water vapor adsorption by the cold trap is to pass refrigerant through the coil in the cold trap, condensing the water vapor molecules in the vacuum into ice at a temperature of -120°C and adsorbing them on the coil.

[0083] like Figure 2 As shown above Figure 2It is used to characterize the internal structure of the cold trap in the related art (i.e. before the embodiment of the present application), Figure 2 It can be seen that the cold trap in the related art only includes one set of coils, and the diameter of the coils is relatively large. Figure 3 As shown above Figure 3 The coil used to characterize the cold trap in the embodiment of the present application is Figure 3 In the embodiment, there are a total of 4 groups of coils (i.e., the N coils mentioned above), each group of coils includes an independent valve. When closed, the coils are in parallel. After the independent valve is opened, the opened coils are in series.

[0084] In the method provided in an embodiment of the present application, after a carrier used to perform physical vapor deposition enters a cavity, the real-time value of the water vapor concentration in the cavity, the rate of change of the real-time value of the water vapor concentration (including the rate of positive increase) and the estimated remaining working time of the carrier in the above-mentioned cavity are determined. Then, based on the real-time value and the rate of change of the water vapor concentration, the estimated water vapor concentration result in the cavity within the above-mentioned estimated remaining working time is determined; finally, in the case that the above-mentioned estimated water vapor concentration result exceeds the target water vapor concentration range, the target adjusted water vapor amount (different physical vapor deposition materials correspond to different target water vapor concentration ranges) is determined so that the water vapor concentration remains within the target water vapor concentration range after adjusting the water vapor concentration, and according to the target adjusted water vapor amount, the water vapor concentration in the above-mentioned cavity is adjusted by a target adjustment method so that the water vapor concentration in the cavity remains within the target water vapor concentration range. In this way, the estimated water vapor concentration results can be obtained through the various parameters of physical vapor deposition in the cavity, so that before the real-time value of the water vapor concentration exceeds the target water vapor concentration range, it can be detected in time and the water vapor concentration in the cavity can be adjusted in time, so that the real-time value of the water vapor concentration in the cavity can always be maintained within the ideal water vapor concentration range (that is, the above-mentioned target water vapor concentration range) through automatic control, thereby greatly improving the work efficiency of physical vapor deposition.

[0085] In another embodiment of the present application, a specific implementation method for adjusting the water vapor concentration in the cavity is also provided. For example, the specific implementation of "adjusting the water vapor amount according to the target and adjusting the water vapor concentration in the cavity using the target adjustment method" mentioned above includes: determining a first duration for adjusting the water vapor concentration in the cavity based on the estimated remaining operating time; and within the first duration, adjusting the water vapor amount according to the target and adjusting the water vapor concentration in the cavity using the target adjustment method.

[0086] Illustratively, the first duration indicates the duration of time, during the estimated remaining operating time corresponding to the physical vapor deposition process, for adjusting the water vapor concentration in the chamber so as to maintain the water vapor concentration in the chamber within the target water vapor concentration range. The first duration accounts for a percentage, f, of the estimated remaining operating time, where f is less than 30%.

[0087] It is understandable that during the PVD process, the water vapor concentration in the cavity needs to be adjusted within a relatively short time frame of the entire PVD process. Only by completing the above adjustment process within a relatively short time frame can it be ensured that the water vapor concentration in the cavity reaches the target range as quickly as possible or always remains within the target water vapor concentration range. Assuming that a longer time frame is required to complete the adjustment of the water vapor concentration in the cavity, the water vapor concentration adjustment will be untimely and inaccurate, and may even cause the water vapor concentration in the cavity to fail to reach the target range or exceed the target water vapor concentration range for a long time.

[0088] Furthermore, in the embodiment of the present application, in order to ensure automatic control of the water vapor concentration, the above-mentioned "within a shorter time range" is quantified, that is, the above-mentioned process of adjusting the water vapor concentration is completed within the first time range.

[0089] Example 1: When the PVD process is 10 minutes (i.e., the estimated remaining working time mentioned above), if the estimated water vapor concentration result exceeds the target water vapor concentration range, the water vapor concentration adjustment in the cavity needs to be completed within the first 30% of 10 minutes, that is, within 3 minutes.

[0090] It should be noted that the first duration is not used to indicate the actual adjustment duration of the PVD water vapor control device, but the duration that can be used to adjust the water vapor concentration during the PVD process.

[0091] (See subsequent description for details).

[0092] In this way, during the PVD process, a time range for adjusting the water vapor concentration is set in proportion to the duration of the PVD process, thereby quantifying the time range for adjusting the water vapor concentration in the cavity, and making automatic adjustment of the water vapor concentration in the cavity more feasible.

[0093] In another embodiment of the present application, a specific implementation method for adjusting the water vapor concentration in the above-mentioned cavity through a target adjustment method is also provided. For example, the specific implementation of "adjusting the water vapor amount according to the target during the first time period and adjusting the water vapor concentration in the above-mentioned cavity through the target adjustment method" mentioned above includes: determining an adjustment time period for adjusting the water vapor concentration in the above-mentioned cavity based on the above-mentioned first time period; and adjusting the water vapor amount according to the target during the adjustment time period within the first time period and adjusting the water vapor concentration in the above-mentioned cavity through the target adjustment method.

[0094] For example, the adjustment duration is less than or equal to the first duration.

[0095] For example, the adjustment duration is any duration interval in the first duration.

[0096] It can be understood that, in actual application, the first duration for adjusting the water vapor concentration in the chamber is usually greater than the duration actually used for adjustment. That is, adjustment in any duration interval in the first duration (the duration interval is equivalent to the adjustment duration) can ensure that the water vapor concentration in the chamber does not exceed the target water vapor concentration range.

[0097] In example 2, in the case of a PVD process of 10 minutes (i.e., the estimated remaining working duration), the water vapor concentration in the chamber needs to be adjusted within the first 20% of the 10 minutes, i.e., within 2 minutes, in the case that the estimated water vapor concentration result exceeds the target water vapor concentration range.

[0098] In example 3, in the case of a PVD process of 10 minutes (i.e., the estimated remaining working duration), the water vapor concentration in the chamber needs to be adjusted within the first 10% of the 10 minutes, i.e., within 1 minute, in the case that the estimated water vapor concentration result exceeds the target water vapor concentration range.

[0099] In this way, by setting a specific adjustment duration for adjusting the water vapor concentration in the chamber, the adjustment of the water vapor concentration in the chamber can be further quantified (i.e., both the duration for adjusting the water vapor concentration and the duration actually consumed by the adjustment process in the duration for adjusting the water vapor concentration can be obtained), so that the adjustment of the water vapor concentration is more accurate and timely.

[0100] In another embodiment of the present application, a specific implementation of obtaining the change rate of the real-time water vapor concentration value is also disclosed.

[0101] For example, the change rate of the real-time water vapor concentration value is determined by obtaining a first monitoring curve corresponding to the real-time water vapor concentration value calculated by a residual gas analyzer.

[0102] In the embodiment of the present application, the first monitoring curve is used for a change curve of the real-time water vapor concentration in the chamber.

[0103] For example, the first monitoring curve can be a monitoring curve output by a residual gas analyzer (RGA).

[0104] In the embodiment of the present application, the first monitoring curve is used to represent the change rate of the real-time water vapor concentration.

[0105] It can be understood that according to the slope value of the first monitoring curve, the change direction of the real-time water vapor concentration value and the change rate of the real-time water vapor concentration value can be obtained. For example, assuming that the curve slope of the first monitoring curve is positive, it indicates that the water vapor concentration in the cavity is getting larger and larger, and the slope value itself can be used to represent the real-time water vapor concentration value. Assuming that the curve slope of the first monitoring curve is negative, it indicates that the water vapor concentration in the cavity is getting smaller and smaller, and the slope value itself can be used to represent the real-time water vapor concentration value.

[0106] It can be understood that the water vapor control device of physical vapor deposition can automatically obtain the change rate of the real-time water vapor concentration value by obtaining the slope value of the first monitoring curve.

[0107] In this way, by obtaining the first monitoring curve, the change rate of the real-time water vapor concentration value can be automatically obtained, so that it can be ensured that whether automatic adjustment of the water vapor concentration is needed and the value of the target adjustment water vapor amount can be accurately determined in the subsequent, and finally the real-time water vapor concentration value in the cavity can be kept within the ideal water vapor concentration range through automatic regulation, which greatly improves the working efficiency of physical vapor deposition.

[0108] In another embodiment of the present application, the target adjustment mode can include two adjustment modes, which are the first adjustment mode of increasing the water vapor inlet amount and the second adjustment mode of reducing the water vapor inlet amount by using the target coil of the cold trap.

[0109] Optionally, for the first adjustment mode of increasing the water vapor inlet amount, the specific implementation is as follows. The "adjusting the water vapor concentration by using the target adjustment mode according to the target adjustment water vapor amount" mentioned in the foregoing includes: determining the water vapor inlet rate of the mass flow meter according to the change rate of the real-time water vapor concentration value; calculating the opening duration of the mass flow meter according to the target adjustment water vapor amount at the water vapor inlet rate; and controlling the mass flow meter to increase the water vapor inlet amount according to the target adjustment water vapor amount and the opening duration of the mass flow meter.

[0110] For example, the water vapor inlet rate of the mass flow meter and the change rate are inversely proportional.

[0111] It can be understood that in the embodiment of the present application, the smaller the change rate of the real-time water vapor concentration value in the cavity, the longer the time that the water vapor concentration in the cavity may take to reach the target water vapor concentration range, and the larger the water vapor inlet rate of the mass flow meter; correspondingly, the larger the change rate of the real-time water vapor concentration value in the cavity, the shorter the time that the water vapor concentration in the cavity may take to reach the target water vapor concentration range, and the smaller the water vapor inlet rate of the mass flow meter.

[0112] Further, in the embodiments of the present application, a preset relationship table between the water vapor input rate of the mass flow meter and the change rate of the real-time value of the water vapor concentration can be set, so that the water vapor input rate of the mass flow meter can be determined according to the change rate of the real-time value of the water vapor concentration.

[0113] It can be understood that the mass flow meter has a certain water vapor input rate, and the target adjustment water vapor amount is determined because the opening duration of the mass flow meter required to keep the real-time value of the water vapor concentration in the target water vapor concentration range can be determined.

[0114] For example, the opening duration of the mass flow meter can be the adjustment duration.

[0115] Further, the mass flow meter is used to increase the water vapor concentration in the chamber, and therefore, in the process of calculating the opening duration of the mass flow meter, the water vapor input rate of the mass flow meter and the target adjustment water vapor amount should be combined to finally determine the opening duration of the mass flow meter.

[0116] In an example, the ratio between the target adjustment water vapor amount and the water vapor input rate of the mass flow meter is the opening duration of the mass flow meter.

[0117] Example 1: The water vapor control device of physical vapor deposition can obtain a curve according to the RGA, so as to monitor the change of the water vapor concentration in the chamber. When it is determined that the concentration in the chamber is lower than or is about to be lower than the target water vapor concentration range, the water vapor control device of physical vapor deposition calculates and prepares to increase the water vapor concentration by using the mass flow meter MFC. At this time, the MFC is started, the water vapor input rate of the mass flow meter is determined in combination with the change rate of the real-time value of the water vapor concentration, the opening duration of the MFC is determined in combination with the target adjustment water vapor amount and the water vapor input rate of the MFC, and the MFC is opened for the opening duration, so that the water vapor concentration in the chamber is always kept in the target water vapor concentration range.

[0118] Optionally, for the second adjustment mode, the specific implementation of reducing the water vapor input amount is as follows. The foregoing “adjusting the water vapor concentration according to the target adjustment water vapor amount by using a target adjustment mode” includes: determining a target coil combination mode for reducing the water vapor input amount and an opening duration of the coils corresponding to the target coil combination mode according to the target adjustment water vapor amount, the change rate of the real-time value of the water vapor concentration, and the condensation rate of water vapor of each coil in the N coils, the target coil combination mode including at least one coil; and controlling the at least one coil to reduce the water vapor input amount according to the target adjustment water vapor amount, the target coil combination mode, and the opening duration of the coils.

[0119] For example, as can be seen from the foregoing content, the target coils for reducing the real-time value of water vapor concentration include N coils. Based on this, the N coils may include a variety of different coil usage combinations.

[0120] For example, as can be seen from the above content, each of the N coils mentioned above is equipped with a separate valve. Therefore, the target coil combination of the N coils in the cold trap can be ultimately determined based on the target water vapor adjustment amount, the change rate in the cavity, and the rate at which each coil condenses water vapor.

[0121] In one example, all possible combinations of N coils can be preset, i.e., a preset coil combination list can be established, thereby adapting different coil combinations to different water vapor parameters within the cavity. This allows the target water vapor volume within the cavity to be adjusted, along with the rate of change of the real-time water vapor concentration value, and the rate at which each of the N coils condenses water vapor. The target coil combination for condensation can then be determined from the preset coil combination list.

[0122] It is understandable that the different combinations of N coils are related to the target water vapor adjustment amount, the rate of change of the real-time water vapor concentration value, and the rate at which each coil condenses water vapor. A change in any of these parameters, such as the target water vapor adjustment amount, the rate of change of the real-time water vapor concentration value, or the rate at which each coil condenses water vapor, may result in a change in the coil combination. Furthermore, a change in the coil combination may be a change in the number of coils involved in condensation, for example, from two coils participating in condensation to three coils participating in condensation; or a change in the position of the coils involved in condensation, for example, from the first and third coils participating in condensation to the second and fourth coils participating in condensation. This is not limited in the present embodiment.

[0123] Example 2: Assume that the cold trap has four coils (i.e., the N coils described above). These four coils are independently connected in parallel when not open, and each coil has an independent valve for opening and closing. The water vapor control device for physical vapor deposition can monitor the change in water vapor concentration in the chamber based on the RGA monitoring curve. If it is determined that the concentration in the chamber is higher than or about to exceed the target water vapor concentration range, the water vapor control device for physical vapor deposition calculates and prepares to use the cold trap to increase the water vapor concentration. At this time, based on the target water vapor adjustment amount, the rate of change of the real-time water vapor concentration in the chamber, and the rate of condensation of water vapor on each coil, a target coil combination for reducing the water vapor intake is selected from a preset coil combination list. The target coil combination is to open the independent valve of the first coil and the independent valve of the second coil in the cold trap in series (i.e., the target coil combination described above), and the coil opening time corresponding to the target coil combination is determined. Then, according to the target water vapor adjustment amount, the target coil combination, and the coil opening time, the at least one coil is controlled to reduce the water vapor intake.

[0124] Combining Examples 1 and 2 above, an RGA was used in actual applications to monitor water vapor concentration to obtain Table 1. Table 1 shows that the target water vapor concentration range is 3.0-4.0. However, as the number of plate coatings increases, the actual water vapor concentration values ​​when no water vapor concentration control is performed indicate that, without any measures to increase or decrease the real-time water vapor concentration value, only the middle portion of the actual water vapor concentration values ​​are within the target water vapor concentration range.

[0125] After using the methods of Example 1 and Example 2, the real-time value of the water vapor concentration can be maintained within the target water vapor concentration range of 3.0-4.0.

[0126]

[0127]

[0128] In another embodiment of the present application, a specific implementation method for determining a target coil combination and the on-time duration of the coil corresponding to the target coil combination is also disclosed. The aforementioned "determining a target coil combination for reducing water vapor intake and the on-time duration of the coil corresponding to the target coil combination based on the rate of change of the real-time value of the water vapor concentration and the rate at which each of the N coils condenses water vapor" includes: screening a matching target coil combination for reducing water vapor intake from preset coil combinations based on the rate of change and the rate at which each coil condenses water vapor; and determining the on-time duration of the coil corresponding to the target coil combination based on the target coil combination.

[0129] For example, the above-mentioned preset coil combination mode may be preset or user-defined, and the embodiments of the present application do not limit this.

[0130] For example, different coil combinations can be preset based on different target water vapor adjustment amounts and different change rates, i.e., a list of preset coil combinations can be generated. After determining the target water vapor adjustment amount, the change rate, and the water vapor condensation rate of each coil, a matching target coil combination can be selected from the preset coil combinations.

[0131] The present application also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the training rule determination method described in the present application. For example, Figure 1 The individual steps of the method are shown.

[0132] The present invention provides a computer program product, which includes instructions that are executed by a processor when the processor executes the instructions. Figure 1 The individual steps of the method are shown.

[0133] It should be noted that although the operations of the present method are described in a particular order in the drawings, this does not require or imply that the operations must be performed in this particular order, or that all illustrated operations must be performed to achieve desirable results.

[0134] Figure 4 This is a block diagram of a water vapor control device for physical vapor deposition according to one embodiment of the present application. Figure 4 The device includes a determination module 601 and an execution module 602.

[0135] Determination module 601, when a carrier for performing physical vapor deposition enters a chamber, is used to determine a real-time value of water vapor concentration in the chamber, a rate of change of the real-time value of water vapor concentration, and an estimated remaining operating time of the carrier in the chamber;

[0136] The determining module 601 is further configured to determine an estimated water vapor concentration result in the cavity within the estimated remaining working time based on the real-time value of the water vapor concentration in the cavity and the change rate;

[0137] An execution module 602 is configured to, if the estimated water vapor concentration result exceeds a target water vapor concentration range, determine a target adjusted water vapor amount for adjusting the water vapor concentration in the cavity so that the water vapor concentration remains within the target water vapor concentration range, and adjust the water vapor concentration in the cavity using a target adjustment method based on the target adjusted water vapor amount so that the water vapor concentration in the cavity remains within the target water vapor concentration range;

[0138] Different physical vapor deposition materials correspond to different target water vapor concentration ranges. In one embodiment, the determination module 601 is specifically configured to:

[0139] When the estimated water vapor concentration result is lower than the minimum threshold, determining a target adjusted water vapor amount after increasing the water vapor concentration in the cavity so that the water vapor concentration remains within the target water vapor concentration range;

[0140] or,

[0141] When the estimated water vapor concentration result is higher than the maximum threshold, a target adjusted water vapor amount is determined so that the water vapor concentration in the cavity is maintained within the target water vapor concentration range after the water vapor concentration in the cavity is reduced.

[0142] In one embodiment, the execution module 602 is specifically configured to:

[0143] Determining, based on the estimated remaining operating time, a first time duration for adjusting the water vapor concentration in the chamber, the first time duration being used to indicate a time duration corresponding to the estimated remaining operating time corresponding to the physical vapor deposition process, for adjusting the water vapor concentration in the chamber so that the water vapor concentration in the chamber remains within the target water vapor concentration range, the first time duration accounting for a percentage f of the estimated remaining operating time, where f is less than 30%;

[0144] During the first time period, the amount of water vapor is adjusted according to the target, and the water vapor concentration in the cavity is adjusted by a target adjustment method.

[0145] In one embodiment, the execution module 602 is specifically configured to:

[0146] determining, based on the first time duration, an adjustment time duration for adjusting the water vapor concentration in the cavity, the adjustment time duration being less than or equal to the first time duration;

[0147] During the adjustment time within the first time period, the water vapor amount is adjusted according to the target, and the water vapor concentration in the cavity is adjusted by the target adjustment method.

[0148] In one embodiment, the determining module 601 is further configured to:

[0149] A target water vapor concentration range in the cavity is determined based on the physical vapor deposition material.

[0150] In one embodiment, when the target adjustment method includes increasing the amount of water vapor introduced, the execution module 602 is specifically configured to:

[0151] Determining the water vapor introduction rate of the mass flow meter according to the rate of change of the real-time value of the water vapor concentration, wherein the water vapor introduction rate and the rate of change of the mass flow meter are inversely proportional;

[0152] According to the water vapor introduction rate, the water vapor amount is adjusted according to the target, and the opening time of the mass flow meter is calculated;

[0153] The water vapor amount and the opening time of the mass flow meter are adjusted according to the target, and the mass flow meter is controlled to increase the water vapor intake.

[0154] In one embodiment, when the target adjustment method includes reducing the amount of water vapor introduced, the execution module 602 is specifically configured to:

[0155] Determining a target coil combination for reducing the amount of water vapor introduced and a coil opening duration corresponding to the target coil combination based on the target adjusted water vapor amount, the rate of change of the real-time water vapor concentration value, and the rate at which each of the N coils condenses water vapor, wherein the target coil combination includes at least one coil;

[0156] The water vapor amount, target coil combination mode and coil opening time are adjusted according to the target, and the at least one coil is controlled to reduce the water vapor intake amount.

[0157] In one embodiment, each of the N coils is provided with a separate valve. The N coils are arranged in parallel when the separate valves are not opened. After the separate valves of M of the N coils are opened, the M coils are arranged in series. Each of the N coils has an independent operation function. N is a positive integer greater than or equal to 2, and M is a positive integer less than or equal to N and greater than 2.

[0158] In one embodiment, the execution module 602 is specifically configured to:

[0159] According to the change rate and the rate at which each coil condenses water vapor, a target coil combination method that reduces water vapor intake is selected from the preset coil combination methods;

[0160] According to the target coil combination mode, the on-time of the coils corresponding to the target coil combination mode is determined.

[0161] In one embodiment, the water vapor control device for physical vapor deposition also includes an acquisition module 603, which is used to obtain a first monitoring curve corresponding to the real-time value of the water vapor concentration calculated by the residual gas analyzer, and the first monitoring curve is used to indicate: the direction of change of the real-time value of the water vapor concentration and the rate of change of the real-time value of the water vapor concentration.

[0162] In one embodiment, the determination module 601 is specifically configured to:

[0163] The real-time value of the water vapor concentration in the cavity is the initial value C0(10 -3 pa), the change rate of the real-time value of the water vapor concentration is the change rate v(10 -3 Pa / min), the estimated remaining working time of the carrier in the cavity is the estimated remaining working time t (min) from the time the carrier enters the cavity to the time it leaves the cavity, and the target water vapor concentration range is C1(10 -3 pa), to C2(10 -3 pa),

[0164] When C0+v×t<C1, determining a target adjusted water vapor amount after increasing the water vapor concentration in the cavity so that the water vapor concentration remains within the target water vapor concentration range;

[0165] or,

[0166] When C0+v×t>C2, it is determined that the target adjusted water vapor amount is reduced so that the water vapor concentration in the cavity is maintained within the target water vapor concentration range.

[0167] In an embodiment of the present application, after a carrier for performing physical vapor deposition enters a cavity, a water vapor control device for physical vapor deposition determines the real-time value of the water vapor concentration in the cavity, the rate of change of the real-time value of the water vapor concentration (including the rate of positive increase) and the estimated remaining working time of the carrier in the above-mentioned cavity. Then, based on the above-mentioned real-time value and rate of change of the water vapor concentration, the estimated water vapor concentration result in the cavity within the above-mentioned estimated remaining working time is determined; finally, in the case that the above-mentioned estimated water vapor concentration result exceeds the target water vapor concentration range, the target adjusted water vapor amount (different physical vapor deposition materials correspond to different target water vapor concentration ranges) is determined so that the water vapor concentration remains within the target water vapor concentration range after adjusting the water vapor concentration, and according to the target adjusted water vapor amount, the water vapor concentration in the above-mentioned cavity is adjusted by the target adjustment method so that the water vapor concentration in the cavity remains within the target water vapor concentration range. In this way, the estimated water vapor concentration results can be obtained through the various parameters of physical vapor deposition in the cavity, so that before the real-time value of the water vapor concentration exceeds the target water vapor concentration range, it can be detected in time and the water vapor concentration in the cavity can be adjusted in time, so that the real-time value of the water vapor concentration in the cavity can always be maintained within the ideal water vapor concentration range (that is, the above-mentioned target water vapor concentration range) through automatic control, thereby greatly improving the work efficiency of physical vapor deposition.

[0168] It should be understood that the units described in the physical vapor deposition water vapor control device correspond to the individual steps in the method described in the accompanying drawings. Therefore, the operations and features described above for the method also apply to the physical vapor deposition water vapor control device, resource access device and the units contained therein, which will not be described here. The physical vapor deposition water vapor control device, resource access device can be pre- implemented in the browser or other security application of the computer device, or can be loaded into the browser or security application of the computer device by downloading or the like. The corresponding units in the physical vapor deposition water vapor control device, resource access device can cooperate with the units in the computer device to realize the scheme of the embodiments of the present application.

[0169] In the foregoing detailed description, several modules or units are mentioned. The division is not mandatory. In fact, according to the embodiments of the present disclosure, the features and functions of two or more modules or units described above can be embodied in one module or unit. Conversely, the features and functions of one module or unit described above can be further divided into a plurality of modules or units.

[0170] It should be noted that the details of the physical vapor deposition water vapor control device and resource access device of the embodiments of the present application that are not disclosed are described with reference to the details disclosed in the above embodiments of the present application, which will not be described here.

[0171] The following refers to Figure 5 , Figure 5 The structural schematic diagram of a computer device suitable for realizing the embodiments of the present application is shown. As Figure 5 shown, the computer system 1700 includes a central processing unit (CPU) 1701, which can perform various appropriate actions and processes according to programs stored in a read-only memory (ROM) 1702 or programs loaded from a storage portion 1708 into a random access memory (RAM) 1703. In the RAM 1703, various programs and data required for operation instructions of the system are also stored. The CPU 1701, the ROM 1702 and the RAM 1703 are connected to each other through a bus 1704. An input / output (I / O) interface 1705 is also connected to the bus 1704.

[0172] The following components are connected to the I / O interface 1705: an input section 1706 including a keyboard, a mouse, and the like; an output section 1707 including devices such as a cathode ray tube (CRT), a liquid crystal display (LCD), and a speaker; a storage section 1708 including devices such as a hard disk; and a communication section 1709 including a network interface card such as a LAN card or a modem. The communication section 1709 performs communication processing via a network such as the Internet. A drive 1710 is also connected to the I / O interface 1705 as needed. Removable media 1711, such as a magnetic disk, an optical disk, a magneto-optical disk, or a semiconductor memory, is installed in the drive 1710 as needed, so that computer programs read therefrom can be installed into the storage section 1708 as needed.

[0173] In particular, according to the embodiments of the present application, the above reference process Figure 1 The described process can be implemented as a computer software program. For example, an embodiment of the present application includes a computer program product, which includes a computer program carried on a computer-readable medium, and the computer program includes a program code for executing the method shown in the flowchart. In such an embodiment, the computer program includes a program code for executing the method shown in the flowchart. In such an embodiment, the computer program can be downloaded and installed from a network via the communication section 1709, and / or installed from a removable medium 1711. When the computer program is executed by the central processing unit (CPU) 1701, the above-mentioned functions defined in the system of the present application are executed.

[0174] It should be noted that the computer-readable medium shown in this application can be a computer-readable signal medium or a computer-readable storage medium, or any combination of the two. The computer-readable storage medium can be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, device, or device, or any combination of the above. More specific examples of computer-readable storage media can include, but are not limited to: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In this application, a computer-readable storage medium can be any tangible medium that contains or stores a program that can be used by or in conjunction with an instruction execution system, device, or device. In this application, a computer-readable signal medium can include a data signal propagated in baseband or as part of a carrier wave, which carries computer-readable program code. This propagated data signal can take a variety of forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination of the above. A computer-readable signal medium may also be any computer-readable medium other than a computer-readable storage medium that can transmit, propagate, or transfer a program for use by or in conjunction with an instruction execution system, apparatus, or device. The program code contained on the computer-readable medium may be transmitted using any suitable medium, including but not limited to wireless, wire, optical cable, RF, or any suitable combination thereof.

[0175] The flowcharts and block diagrams in the accompanying drawings illustrate the possible implementation architecture, functions and operating instructions of the systems, methods and computer program products according to various embodiments of the present application. In this regard, each box in the flowchart or block diagram can represent a module, program segment, or a part of code, and the aforementioned module, program segment, or a part of code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in a different order than the order marked in the accompanying drawings. For example, the boxes represented by two connections can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram and / or flowchart, and the combination of the boxes in the block diagram and / or flowchart, can be implemented using a dedicated hardware-based system that performs the specified function or operating instruction, or can be implemented using a combination of dedicated hardware and computer instructions.

[0176] The units or modules described in the embodiments of this application may be implemented in software or hardware. The units or modules described may also be provided in a processor. For example, a processor may be described as including a first receiving module, a second receiving module, and a sending module. The names of these units or modules do not, in some cases, limit the units or modules themselves.

[0177] As another aspect, the present application further provides a computer-readable storage medium, which may be included in the electronic device described in the above embodiments, or may exist independently without being incorporated into the electronic device. The computer-readable storage medium stores one or more programs, which, when used by one or more processors, execute the water vapor control method for physical vapor deposition described in the present application.

[0178] The above description is merely a preferred embodiment of the present application and an illustration of the technical principles employed. Those skilled in the art should understand that the scope of disclosure in this application is not limited to the technical solutions formed by a specific combination of the above-mentioned technical features, but also encompasses other technical solutions formed by any combination of the above-mentioned technical features or their equivalents without departing from the aforementioned disclosed concepts. For example, a technical solution formed by replacing the above-mentioned features with (but not limited to) technical features with similar functions disclosed in this application.

Claims

1. A method for controlling water vapor in physical vapor deposition, characterized in that: include: After a carrier for performing physical vapor deposition enters a chamber, determining a real-time value of water vapor concentration in the chamber, a rate of change of the real-time value of water vapor concentration, and an estimated remaining operating time of the carrier in the chamber; Determining an estimated water vapor concentration result in the cavity within the estimated remaining working time according to the real-time value of the water vapor concentration in the cavity and the rate of change; If the estimated water vapor concentration result exceeds the target water vapor concentration range, determining a target adjusted water vapor amount for adjusting the water vapor concentration in the cavity so that the water vapor concentration remains within the target water vapor concentration range, and adjusting the water vapor concentration in the cavity using a target adjustment method based on the target adjusted water vapor amount so that the water vapor concentration in the cavity remains within the target water vapor concentration range; Among them, different physical vapor deposition materials correspond to different target water vapor concentration ranges.

2. The method according to claim 1, characterized in that When the target water vapor concentration range includes a maximum threshold and a minimum threshold, determining, when the estimated water vapor concentration result exceeds the target water vapor concentration range, a target adjusted water vapor amount for adjusting the water vapor concentration in the cavity so that the water vapor concentration remains within the target water vapor concentration range includes: When the estimated water vapor concentration result is lower than the minimum threshold, determining a target adjusted water vapor amount after increasing the water vapor concentration in the cavity so that the water vapor concentration remains within the target water vapor concentration range; or, When the estimated water vapor concentration result is higher than the maximum threshold, a target adjusted water vapor amount is determined so that the water vapor concentration in the cavity is maintained within the target water vapor concentration range after the water vapor concentration in the cavity is reduced.

3. The method according to claim 1, characterized in that The step of adjusting the amount of water vapor according to the target and adjusting the water vapor concentration in the cavity by a target adjustment method includes: determining, based on the estimated remaining operating time, a first duration for adjusting the water vapor concentration in the chamber, the first duration being used to indicate a duration corresponding to the estimated remaining operating time corresponding to the physical vapor deposition process, for adjusting the water vapor concentration in the chamber so that the water vapor concentration in the chamber remains within the target water vapor concentration range, the first duration accounting for a percentage f of the estimated remaining operating time, where f is less than 30%; During the first time period, the amount of water vapor is adjusted according to the target, and the water vapor concentration in the cavity is adjusted by a target adjustment method.

4. The method according to claim 3, characterized in that The step of adjusting the water vapor amount according to the target within the first time period and adjusting the water vapor concentration in the cavity by a target adjustment method includes: determining, based on the first time duration, an adjustment time duration for adjusting the water vapor concentration in the cavity, the adjustment time duration being less than or equal to the first time duration; During the adjustment time within the first time period, the water vapor amount is adjusted according to the target, and the water vapor concentration in the cavity is adjusted by the target adjustment method.

5. The method according to claim 1, wherein Before determining a target adjusted water vapor amount after adjusting the water vapor concentration so that the water vapor concentration remains within the target water vapor concentration range when the estimated water vapor concentration result exceeds the target water vapor concentration range, the method further includes: A target water vapor concentration range in the cavity is determined based on the physical vapor deposition material.

6. The method according to claim 2, characterized in that In the case where the target adjustment method is to increase the amount of water vapor introduced, adjusting the amount of water vapor according to the target and adjusting the water vapor concentration in the cavity by the target adjustment method include: Determining the water vapor introduction rate of the mass flow meter according to the rate of change of the real-time value of the water vapor concentration, wherein the water vapor introduction rate and the rate of change of the mass flow meter are inversely proportional; According to the water vapor introduction rate, the water vapor amount is adjusted according to the target, and the opening time of the mass flow meter is calculated; The water vapor amount and the opening time of the mass flow meter are adjusted according to the target, and the mass flow meter is controlled to increase the water vapor intake.

7. The method according to claim 2, characterized in that In the case where the target adjustment method is to reduce the amount of water vapor introduced, adjusting the amount of water vapor according to the target and adjusting the water vapor concentration by the target adjustment method include: Determining a target coil combination for reducing the amount of water vapor introduced and a coil opening duration corresponding to the target coil combination based on the target adjusted water vapor amount, the rate of change of the real-time water vapor concentration value, and the rate at which each of the N coils condenses water vapor, wherein the target coil combination includes at least one coil; The water vapor amount, target coil combination mode and coil opening time are adjusted according to the target, and the at least one coil is controlled to reduce the water vapor intake amount.

8. The method according to claim 7, characterized in that Each of the N coils is equipped with a separate valve. The N coils are arranged in parallel when the separate valves are not opened. After the separate valves of M of the N coils are opened, the M coils are arranged in series. Each of the N coils has an independent operation function. N is a positive integer greater than or equal to 2, and M is a positive integer less than or equal to N and greater than 2.

9. The method according to claim 7, characterized in that Determining a target coil combination for reducing water vapor intake and a coil opening time corresponding to the target coil combination based on a rate of change of the real-time water vapor concentration and a rate at which water vapor is condensed by each of the N coils includes: According to the change rate and the rate at which each coil condenses water vapor, a target coil combination method that reduces water vapor intake is selected from the preset coil combination methods; According to the target coil combination mode, the on-time of the coils corresponding to the target coil combination mode is determined.

10. The method according to claim 1, characterized in that The method further comprises: The change rate of the real-time value of the water vapor concentration calculated by the residual gas analyzer is obtained according to a first monitoring curve corresponding to the real-time value of the water vapor concentration.

11. The method according to claim 1, wherein The real-time value of the water vapor concentration in the cavity is the initial value C0 of the water vapor concentration in the cavity when the carrier enters the cavity, and its unit is pa, the rate of change of the real-time value of the water vapor concentration is the rate of change v of the water vapor concentration in the cavity when the carrier enters the cavity, and its unit is Pa / min, the estimated remaining working time of the carrier in the cavity is the estimated remaining working time t of the carrier from entering the cavity to leaving the cavity, and its unit is min. The target water vapor concentration range is C1, and its unit is pa, to C2, its unit is pa, in the case of When C0+v×t<C1, determining a target adjusted water vapor amount after increasing the water vapor concentration in the cavity so that the water vapor concentration remains within the target water vapor concentration range; or, When C0+v×t>C2, it is determined that the target adjusted water vapor amount is reduced so that the water vapor concentration in the cavity is maintained within the target water vapor concentration range.

12. A water vapor control device for physical vapor deposition, characterized in that: The device comprises: a determination module, configured to determine, when a carrier for performing physical vapor deposition enters a chamber, a real-time value of water vapor concentration in the chamber, a rate of change of the real-time value of water vapor concentration, and an estimated remaining operating time of the carrier in the chamber; The determining module is further configured to determine an estimated water vapor concentration result in the cavity within the estimated remaining working time based on the real-time value of the water vapor concentration in the cavity and the change rate; an execution module, configured to, if the estimated water vapor concentration result exceeds a target water vapor concentration range, determine a target adjusted water vapor amount for adjusting the water vapor concentration in the cavity so that the water vapor concentration remains within the target water vapor concentration range, and adjust the water vapor concentration in the cavity using a target adjustment method based on the target adjusted water vapor amount so that the water vapor concentration in the cavity remains within the target water vapor concentration range; Among them, different physical vapor deposition materials correspond to different target water vapor concentration ranges.

13. A computer device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein: When the processor executes the program, the method according to any one of claims 1 to 11 is implemented.

14. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the program is executed by a processor, the method according to any one of claims 1 to 11 is implemented.

15. A computer program product comprising instructions, characterized in that: When the instructions are executed by a processor, the method according to any one of claims 1 to 11 is implemented.

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