A method for calculating the composition of a pfm thin film with an element lateral gradient

Abstract

The present application relates to a kind of element transverse gradient PFM thin film composition content calculation method, constructs the magnetron sputtering system of multicomponent alloy target and tungsten target, when calculating, the centroid of multicomponent alloy target and tungsten target is used to replace multicomponent alloy target and tungsten target, the vertical distance of target and substrate is h, the length of substrate is l, the angle of the line of the centroid of tungsten target and multicomponent alloy target to substrate position and vertical direction is respectively α1, α2;According to the sputtering power of tungsten target p1 and the sputtering power of multicomponent alloy target p2, and the movement speed and proportion of each element atom, the content of each element of gradient change film is calculated.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of nuclear fusion materials, and particularly relates to a PFM thin film composition content calculation method with element transverse gradient. BACKGROUND

[0002] Tungsten is currently recognized as the best candidate material for PFM of fusion reactors, and PFM refers to plasma-facing materials (PFMs). The first tungsten-containing high-entropy alloy mentioned is NbMoTaW, and the mechanical properties of the alloy are better than those of any pure element material. In order to further optimize the performance of the tungsten-containing high-entropy alloy, more multi-element tungsten-containing high-entropy alloy thin films are researched, and it is also found that different contents of elements have different effects on the same system high-entropy alloy thin film. The microstructure of the alloy thin film with different element contents in the same system is different, the performance is also different, and with the gradual increase of the content of the added element, the crystal structure and the performance also have regular changes. Currently, the content gradient changes reported are mainly vertical (thickness direction) gradient changes, and the present application relates to a thin film composition content calculation method with element composition having transverse (parallel to the surface direction of the sample) gradient change, which can be applied to the efficient research of PFM. SUMMARY

[0003] The present application provides a PFM thin film composition content calculation method with element transverse gradient, aiming at the fact that there is no PFM thin film composition content calculation method with element transverse gradient at present.

[0004] In order to achieve the purpose of the present application, the technical scheme adopted is as follows:

[0005] A PFM thin film composition content calculation method with element transverse gradient, comprising the following steps:

[0006] A multi-element alloy target and a tungsten target are constructed into a magnetron sputtering system, the mass center of the multi-element alloy target and the tungsten target is used to replace the multi-element alloy target and the tungsten target during calculation, the vertical distance between the target and the substrate is h, the length of the substrate is l, and the angles between the connecting lines from the mass centers of the tungsten target and the multi-element alloy target to the substrate and the vertical direction are respectively α1 and α2;

[0007] The emission speed of the target atoms is proportional to the square root of the sputtering power, that is, The sputtering power of the tungsten target is p1, the sputtering power of the multi-element alloy target is p2, the motion time is t, the content percentage of tungsten in the target is n, the content percentage of the multi-element alloy is 1-n, the motion path of the tungsten atoms is l1, the motion path of the multi-element alloy atoms is l2, the motion speed of the tungsten atoms is v1, and the motion speed of the multi-element alloy atoms is v2;

[0008] When the sputtering power is different:

[0009] The percentage of the molar content of tungsten on the substrate is:

[0010]

[0011] When the sputtering power is the same: that is, p1 = p2, then formula 1 can be simplified as

[0012]

[0013] Further, the magnetron sputtering is divided into two cases of double-target and single-target, the double-target has two cases of the same sputtering power and different sputtering power, the single-target has only one sputtering power, which is defined as the case of the same sputtering power.

[0014] Further, the double-target case is that the entire target material of one target is W, and its centroid is at the center of the circle, and the other target is a multi-element alloy target, each alloy is a sector.

[0015] Further, the single-target is an alloy element and W material composed of a circular target, and the alloy element sector target is abstracted as a centroid, and the sector tungsten target is another centroid.

[0016] Further, the centroid solving formula of the multi-element alloy target is:

[0017]

[0018] The mass of each alloy element is m1, m2, m3, …, m z , and the corresponding central angle range is 0-θ1, θ1-θ2, θ2-θ3, …, θ z-1 -θ z , and m is the total mass of the multi-element alloy target.

[0019] Further, in the single-target case, the centroid of a single alloy element or the centroid of a multi-element alloy element or the centroid of a sector W material can be calculated by formula 3.

[0020] Further, in the single-target case, when the tungsten target accounts for 50% of the total target area, θ = 180°, and the centroid solving formula of the tungsten target is calculated by formula 3 as

[0021] Further, the horizontal distance between the multi-element alloy target point and the substrate center point O is |x2-x3|, the substrate center point O is also called the target point, and the horizontal distance between the tungsten target point and the target point is |x1-x3|, then The sputtering power is different, and the sputtering power is the same, that is, formula 1 is brought into formula 2, and the molar content of W at X3 on the substrate is calculated, then the total molar content of the alloy elements at this place of the thin film on the substrate is 1-W%, and the molar content of a single alloy element at this place of the thin film on the substrate is (mz m) x (1-W%), wherein the centroid x1 is the tungsten target material horizontal position, and the centroid x2 is the alloy target material horizontal position.

[0022] The substrate adopts one of a single crystal silicon wafer, a stainless steel sheet and a tungsten sheet, and adopts a long strip shape, and the size range is 20mm*5mm-80mm*20mm.

[0023] The present application has the beneficial effect that the present application can realize the calculation method of the content of each element of the thin film with the content of W, Ta, Cr, V, Al, Ti, Zr and the like changing in the horizontal direction. Such a horizontal gradient thin film can very conveniently and efficiently carry out the research on the change rule of the thin film properties with the composition. The present application can realize the element composition of the high-entropy alloy thin film deposited on the surface of the substrate, including W, Ta, Cr, V, Al, Ti and Zr. BRIEF DESCRIPTION OF DRAWINGS

[0024] Figure 1 It is a schematic diagram of a magnetron sputtering double-target structure in the present application;

[0025] Figure 2 It is a schematic diagram of a magnetron sputtering single-target structure in the present application;

[0026] Figure 3 It is a schematic diagram of a magnetron sputtering single-target structure with W content greater than 50% in the present application;

[0027] Figure 4 It is a schematic diagram of the atom movement of the magnetron sputtering target material in the present application. DETAILED DESCRIPTION

[0028] The technical scheme of the present application will be further described in detail below, which is an explanation of the present application rather than a limitation.

[0029] When the target site is built, the atomic percentage of each element in the alloy ranges from: W 5-70%, Ta 5-35%, Cr 5-35%, V 5-35%, Al 5-35%, Ti 5-35%, Zr 5-35%, and the relative ratio between each alloy element does not change with the position.

[0030] Example 1 (single target site)

[0031] Target pretreatment: Ta, Cr, V, Al, Ti, and Zr metal disc-shaped targets are cut into fan-shaped metal sheets of equal diameter and thickness according to the area ratio of 5%, 10%, 10%, 10%, 5%, and 10%. The six materials form a semi-disc, and W material is also made into a semi-disc. All alloy elements are spliced ​​with W to form a disc target. Each material is ground and polished, and then ultrasonically cleaned with acetone, alcohol, and deionized water in sequence. After being dried with nitrogen, the seven materials Ta, Cr, V, Al, Ti, Zr, and W are spliced ​​into a circular target and placed in the sputtering chamber. The target radius R is 165 mm, and the vertical distance h between the target and the substrate is 40 mm. When placing a 60 mm × 10 mm strip-shaped single crystal silicon wafer substrate, its length direction is parallel to the target surface. The substrate is kept stationary and does not rotate during the thin film deposition process.

[0032] Sputtering preparation: After evacuating the sputtering chamber, argon gas was introduced. The sputtering power was set to 100W, the sputtering pressure to 0.1Pa, the substrate temperature to room temperature, and the sputtering time to 3h. A lateral gradient thin film was obtained on a single-crystal silicon substrate. The distances from the centroid of the tungsten target and the center of the multi-metal target were calculated to be 70mm and 98mm respectively, according to Equations 4 and 3. The range is Therefore, according to Equation 2, the molar content of W in the substrate ranges from 43% to 70%, and the relative proportions of the other six elements do not change with position. The molar contents of Ta, Cr, V, Al, Ti, and Zr in the substrate are 3% to 5.6%, 6% to 11.2%, 6% to 11.2%, 6% to 11.2%, 3% to 5.6%, and 6% to 11.2%, respectively.

[0033] Example 2 (Single Target)

[0034] Target pretreatment: Ta, Cr, V, Al, Ti, and Zr metal disc targets are cut into fan-shaped metal sheets of equal diameter and thickness according to area ratios of 35%, 5%, 5%, 35%, 10%, and 5%, respectively. The target radius R is 188.4 mm, and the vertical distance h between the target and the substrate is 10.6 mm. Each material is polished and ultrasonically cleaned with acetone, alcohol, and deionized water in sequence. After drying with nitrogen, the seven materials Ta, Cr, V, Al, Ti, Zr, and W are spliced ​​into a circular target and placed in the sputtering chamber. When placing a 30 mm × 5 mm strip-shaped single crystal silicon wafer substrate with W accounting for 5%, its length direction is parallel to the target surface. During the thin film deposition process, the substrate is kept stationary and does not rotate.

[0035] Sputtering preparation: After evacuating the sputtering chamber, argon gas was introduced. The sputtering power was set to 50W, the sputtering pressure to 5Pa, the substrate temperature to 600℃, and the sputtering time to 2h. A transverse gradient thin film was obtained on the single-crystal silicon substrate. According to Equation 3, the distances from the centroid of the tungsten target and the multi-metal target to the center of the circle were calculated to be 2 and 31.9 mm, respectively. the range of Therefore, according to formula 2, the molar content of W in the substrate is in the range of 5% to 15.35%, and the relative proportions among the other six elements do not change with the position, and the molar content of Ta, Cr, V, Al, Ti, and Zr in the substrate is in the range of 31.22% to 35%, 4.46% to 5%, 4.46% to 5%, 31.22% to 35%, 8.92% to 10%, and 4.46% to 5%.

[0036] Example 3 (single target position)

[0037] Target material pretreatment: The Ta, Cr, V, Al, Ti, and Zr metal disc-shaped target materials are cut into fan-shaped metal pieces with equal diameters and the same thickness according to an area ratio of 5%, 5%, 5%, 5%, 5%, and 5%. The target radius R is 1956.8 mm, the vertical distance h between the target and the substrate is 18.5 mm, each material is polished and polished, and then sequentially ultrasonically cleaned with acetone, alcohol, and deionized water. After blowing dry with nitrogen, the seven materials of Ta, Cr, V, Al, Ti, Zr, and W are spliced into a circular target and placed in a sputtering chamber. The 20 mm x 5 mm strip-shaped single crystal silicon substrate is placed with its length direction parallel to the target surface, and the substrate is kept stationary during film deposition.

[0038] Sputtering preparation: After the sputtering chamber is evacuated, argon gas is introduced, the sputtering power is set to 300 W, the sputtering pressure is 10 Pa, the substrate temperature is 100°C, and the sputtering time is 1 h. A transverse gradient film is obtained on the single crystal silicon substrate. According to formula 3, the distance from the center of mass of the tungsten target and the multi-element alloy target to the center of the circle is 91.4 mm and 89.9 mm, respectively, so that the range of Therefore, according to formula 2, the molar content of W in the substrate is in the range of 5% to 15.35%, and the relative proportions among the other six elements do not change with the position, and the molar content of Ta, Cr, V, Al, Ti, and Zr in the substrate is in the range of 31.22% to 35%, 4.46% to 5%, 4.46% to 5%, 31.22% to 35%, 8.92% to 10%, and 4.46% to 5%.

[0039] Example 4 (double target position - same sputtering power)

[0040] Target pretreatment: Ta, Cr, V, Al, Ti, Zr metal disc-shaped target material is cut into equal diameter, same thickness of fan-shaped metal sheet according to the area ratio of 15%, 35%, 10%, 15%, 15%, 5%, the target radius R is 305mm, the vertical distance h between the target and the substrate is 190mm, the double target site production process is that the other pure metal target materials except W are spliced into a whole circle as a target site, the circular pure W target is installed in the other target site of the co-sputtering film coating machine, the length direction of the substrate is parallel to the line connecting the centers of the two targets when placing the substrate, the length direction of the 40mm*10mm strip-shaped tungsten substrate is transverse to the two sputtering sources when placing the substrate so that each point on the substrate is at different distances and angles from the sputtering source, and the substrate remains stationary during the thin film deposition process.

[0041] Sputtering preparation: after the sputtering chamber is evacuated, argon is introduced, the sputtering power is set to 500W, the sputtering pressure is 20Pa, the substrate temperature is 500℃, and the sputtering time is 4h, a transverse gradient thin film is obtained on the single crystal silicon substrate, according to formula 3, the distance between the center of mass of the tungsten target and the multi-element alloy target and the center of the circle is 305mm, and the range of Therefore, according to formula 2, the molar content of W in the substrate is in the range of 47.11% to 53.23%, and the relative proportions between the other six elements do not change with position, the molar content of Ta, Cr, V, Al, Ti, Zr in the substrate is 7.01% to 7.93%, 16.37% to 18.51%, 4.68% to 5.28%, 7.01% to 7.93%, 7.01% to 7.93%, and 2.34% to 2.64%.

[0042] Example 5 (double target site-same sputtering power)

[0043] Target pretreatment: Ta, Cr, V, Al, Ti, Zr metal disc-shaped target material is cut into equal diameter, same thickness of fan-shaped metal sheet according to the area ratio of 15%, 35%, 10%, 15%, 15%, 5%, the target radius R is 305mm, the vertical distance h between the target and the substrate is 190mm, the double target site production process is that the other pure metal target materials except W are spliced into a whole circle as a target site, the circular pure W target is installed in the other target site of the co-sputtering film coating machine, the length direction of the substrate is parallel to the line connecting the centers of the two targets when placing the substrate, the length direction of the 40mm*10mm strip-shaped tungsten substrate is transverse to the two sputtering sources when placing the substrate so that each point on the substrate is at different distances and angles from the sputtering source, and the substrate remains stationary during the thin film deposition process.

[0044] ​Sputtering preparation: After the sputtering chamber is evacuated, argon is introduced, the sputtering power is set to 150 W, the sputtering pressure is 0.1 Pa, the substrate temperature is 300 DEG C, and the sputtering time is 2 h, a lateral gradient film is obtained on a single crystal silicon substrate, according to formula 3, the distance between the mass center of the tungsten target and the multi-element alloy target and the center of the circle is 65.8, 96.5 mm, and then the range of Therefore, according to formula 2, the molar content of W in the substrate is 48.32% to 67.21%, and the relative proportions among the other six elements do not change with position, the molar content of Ta, Cr, V, Al, Ti, and Zr in the substrate is 9.84% to 15.50%, 1.64% to 2.58%, 11.48% to 18.09%, 1.64% to 2.58%, 6.56% to 10.33%, and 1.64% to 2.58%.

[0045] Example 6 (double target position-sputtering power is different)

[0046] Target material pretreatment: Ta, Cr, V, Al, Ti, and Zr metal disc-shaped target materials are cut into fan-shaped metal pieces with equal diameters and the same thickness according to the area ratio of 5%, 10%, 20%, 25%, 5%, and 35%, the target radius R is 104 mm, the vertical distance h between the target and the substrate is 67 mm, the double target position manufacturing process is that the pure metal targets except W are spliced into a whole circle as a target position, referred to as an alloy element target, and the circular pure W target is installed in another target position of the co-sputtering film deposition machine, and when the substrate is placed, the length direction is parallel to the line connecting the centers of the two targets, and the 40 mm x 10 mm strip-shaped tungsten substrate is placed with the length direction across the two sputtering sources so that each point on the substrate is at different distances and angles from the sputtering source, and the substrate is kept stationary during the thin film deposition process.

[0047] Sputtering preparation: After the sputtering chamber is evacuated, argon is introduced, the sputtering power is set to 150 W, the sputtering pressure is 0.1 Pa, the substrate temperature is 300 DEG C, and the sputtering time is 2 h, a lateral gradient film is obtained on a single crystal silicon substrate, according to formula 3, the distance between the mass center of the tungsten target and the multi-element alloy target and the center of the circle is 65.8, 96.5 mm, and then the range of Therefore, according to formula 2, the molar content of W in the substrate is 48.32% to 67.21%, and the relative proportions among the other six elements do not change with position, the molar content of Ta, Cr, V, Al, Ti, and Zr in the substrate is 9.84% to 15.50%, 1.64% to 2.58%, 11.48% to 18.09%, 1.64% to 2.58%, 6.56% to 10.33%, and 1.64% to 2.58%.

[0048] Example 7 (Double target - sputtering power different)

[0049] Target pre-treatment: Ta, Cr, V, Al, Ti, Zr metal disc-shaped target material is cut into equal diameter, same thickness of fan-shaped metal pieces according to the area ratio of 10%, 25%, 10%, 15%, 35%, 5%, the target radius R is 39.5mm, the vertical distance h between the target and the substrate is 8.5mm, the double target preparation process is that the other pure metal targets except W are spliced into a whole circle as a target, the circular pure W target is installed in the other target of the co-sputtering film deposition machine, the length direction of the substrate is parallel to the line connecting the centers of the two targets when placing the substrate, the 40mm×10mm strip-shaped tungsten substrate is placed with its length direction across the two sputtering sources so that each point on the substrate is at different distances and angles from the sputtering source, and the substrate remains stationary during the thin film deposition process.

[0050] Sputtering preparation: after the sputtering chamber is evacuated, argon is introduced, the multi-element alloy target sputtering power is set to 50W, the pure W target is 250W, the sputtering gas pressure is 15Pa, the substrate temperature is 800℃, and the sputtering time is 3h, a transverse gradient thin film is obtained on the single crystal silicon substrate, according to formula 3, the distance between the centroid of the tungsten target and the multi-element alloy target and the center of the circle is 39.5, 64.2mm, and the range of Therefore, according to formula 1, the molar content of W on the substrate is in the range of 62.64% to 90.00%, and the relative proportions between the other six elements Ta, Cr, V, Al, Ti, Zr do not change with position, the molar content of Ta, Cr, V, Al, Ti, Zr on the substrate is 1.00% to 3.74%, 2.50% to 9.35%, 1.00% to 3.74%, 1.50% to 5.61%, 3.50% to 13.09%, and 0.50% to 1.87%.

[0051] Example 8 (Double target - 4 alloy elements - different sputtering power)

[0052] Target pre-treatment: Ta, Cr, Ti, Zr metal disc-shaped target material is cut into equal diameter, same thickness of fan-shaped metal pieces according to the area ratio of 30%, 40%, 20%, 10%, the target radius R is 52.3mm, the vertical distance h between the target and the substrate is 19mm, the double target preparation process is that the other pure metal targets except W are spliced into a whole circle as a target, the circular pure W target is installed in the other target of the co-sputtering film deposition machine, the length direction of the substrate is parallel to the line connecting the centers of the two targets when placing the substrate, the 40mm×10mm strip-shaped tungsten substrate is placed with its length direction across the two sputtering sources so that each point on the substrate is at different distances and angles from the sputtering source, and the substrate remains stationary during the thin film deposition process.

[0053] ​Sputtering preparation: After the sputtering chamber is vacuumed, argon is introduced, the sputtering power of the multi-element alloy target is set to 100 W, the sputtering power of the pure W target is set to 200 W, the sputtering gas pressure is 20 Pa, the substrate temperature is 700 DEG C, and the sputtering time is 3 h, so that a lateral gradient film is obtained on a single crystal silicon substrate. According to formula 3, the distance between the center of mass of the tungsten target and the multi-element alloy target and the center of the circle is 52.3, 73.1 mm, so that the range of Therefore, according to formula 1, the molar content of W in the substrate is 51.47% to 77.91%, and the relative proportions among the other six elements do not change with the position. The molar content of Ta, Cr, Ti, Zr in the substrate is 6.63% to 14.56%, 8.84% to 19.41%, 4.42% to 9.71%, and 2.21% to 4.85%.

[0054] Example 9 (single target position-4 alloy elements)

[0055] Target pre-treatment: Ta, Cr, V, and Al metal disc-shaped targets are cut into fan-shaped metal pieces with the same diameter and thickness according to the area ratio of 5%, 10%, 15%, and 20%. The four materials form a semicircular disc, and the W material is also in the form of a semicircular disc. The target radius R is 268 mm, the vertical distance h between the target and the substrate is 28 mm, each material is polished and polished, and then sequentially ultrasonically cleaned with acetone, alcohol, and deionized water. After drying with nitrogen, the Ta, Cr, V, Al, and W materials are spliced into a circular target and placed in a sputtering chamber. A 60 mm x 10 mm strip-shaped single crystal silicon wafer substrate is placed with the length direction perpendicular to the boundary line between the two halves of the target. The substrate remains stationary during the film deposition process.

[0056] Sputtering preparation: After the sputtering chamber is vacuumed, argon is introduced, the sputtering power is set to 100 W, the sputtering gas pressure is 0.1 Pa, the substrate temperature is room temperature, and the sputtering time is 3 h, so that a lateral gradient film is obtained on a single crystal silicon substrate. According to formula 4 and formula 3, the distance between the center of mass of the tungsten target and the multi-element alloy target and the center of the circle is 114, 115.6 mm, so that the range of Therefore, according to formula 2, the molar content of W in the substrate is 46% to 62%, and the relative proportions among the other six elements do not change with the position. The content of Ta, Cr, V, and Al in the substrate is 3.8% to 5.4%, 7.6% to 10.8%, 11.4% to 11.2%, and 15.2% to 21.6%.

[0057] Example 10 (double target position-4 alloy elements-same sputtering power)

[0058] Target pretreatment: Ta, Cr, V, Al metal disc-shaped target material is cut into fan-shaped metal pieces with equal diameter and same thickness according to area ratio of 25%, 35%, 15%, 25%. The target radius R is 266 mm, the vertical distance h between the target and the substrate is 27 mm. The double target site manufacturing process is that the other pure metal targets except W are spliced into a whole circle as a target site, and the circular pure W target is installed in another target site of the co-sputtering film deposition machine. When placing the substrate, the length direction is parallel to the line connecting the two target centers. The 40 mm x 10 mm strip-shaped tungsten substrate is placed with the length direction across the two sputtering sources so that each point on the substrate has different distances and angles with the sputtering sources. The substrate is kept stationary during the thin film deposition process.

[0059] Sputtering preparation: After the sputtering chamber is evacuated, argon is introduced, the sputtering power is set to 500 W, the sputtering pressure is 20 Pa, the substrate temperature is 500℃, and the sputtering time is 4 h. A transverse gradient thin film is obtained on the single crystal silicon substrate. According to formula 3, the distance between the centroid of the tungsten target and the multi-element alloy target and the center of the circle is 113 mm and 98.8 mm, respectively. Therefore, The range of Therefore, according to formula 2, the molar content of W on the substrate is 38% to 56%, and the relative ratio between the other six elements does not change with the position. The molar content of Ta, Cr, V, Al on the substrate is 11% to 15.5%, 15.4% to 21.7%, 6.6% to 9.3%, and 11% to 15.5%.

[0060] The above is a further detailed description of the present application in combination with the specific embodiments, which cannot be considered as limiting the specific implementation of the present application to these descriptions. For ordinary skilled persons in the technical field to which the present application belongs, without departing from the concept of the present application, a number of simple deductions or substitutions can be made, which should be considered as belonging to the protection scope determined by the claims submitted by the present application.

Claims

1. A method for calculating the composition of a PFM thin film with an element lateral gradient, characterized in that, Comprising the following steps: A magnetron sputtering system of a multi-element alloy target and a tungsten target is constructed, and in calculation, the mass center of the multi-element alloy target and the tungsten target is used to replace the multi-element alloy target and the tungsten target, the vertical distance between the target and the substrate is h, the length of the substrate is l, and the angles between the line connecting the mass center of the tungsten target and the mass center of the multi-element alloy target to the substrate position and the vertical direction are α1 and α2 respectively; The emission speed of the target atom is proportional to the square root of the sputtering power, that is The sputtering power of the tungsten target material is p1, the sputtering power of the multi-element alloy target material is p2, the motion time is t, the content percentage of tungsten in the target is n, the content percentage of the multi-element alloy is 1-n, the motion path of the tungsten atom is l1, the motion path of the multi-element alloy atom is l2, the motion speed of the tungsten atom is v1, and the motion speed of the multi-element alloy atom is v2. When the sputtering power is different: The molar content percentage of tungsten on the substrate is: When the sputtering power is the same: that is, p1=p2, then formula 1 can be simplified as 。 2. The method of claim 1, wherein, The magnetron sputtering is divided into two cases of double-target position and single-target position, the double-target position has two cases of the same sputtering power and different sputtering power, and the single-target position has only one sputtering power, which is defined as the case of the same sputtering power.

3. The method of claim 2, wherein, The double-target position case is that the entire target of one target position is W, and its mass center is at the center of the circle, and the other target position is a multi-element alloy target, and each alloy is a sector.

4. The method of claim 3, wherein, The single-target position is a circular target position composed of alloy elements and W materials, and the alloy element sector target is abstracted into a mass center, and the sector tungsten target is another mass center.

5. The calculation method according to claim 3 or 4, characterized in that, The mass center solving formula of the multi-element alloy target is: The mass of each alloying element is m1, m2, m3, …, m respectively z ; and the corresponding central angle ranges are 0~θ1, θ1~θ2, θ2~θ3, …, θ z-1 ~θ z ; m is the total mass of the multi-element alloy target.

6. The method of claim 5, wherein, In the single-target position case, the mass center of a single alloy element or the mass center of a multi-element alloy element or the mass center of a sector W material can be calculated by formula 3.

7. The method of claim 6, wherein, The single target case, when the tungsten target accounts for 50% of the total target area, θ = 180°, and the formula for solving the center of mass of the tungsten target is calculated as formula 3, which is 8. The method of claim 5, wherein, The horizontal distance between the multi-element alloy target material point and the center point O of the substrate is |x2-x3|, x3 is any point on the substrate, the horizontal distance between the tungsten target material point and the target material point is |x1-x3|, then The sputtering power is different, and formula 1 is brought in, the sputtering power is the same, and formula 2 is brought in, that is, the molar content of W at X3 on the substrate can be calculated, then the total molar content of alloy elements at this place of the film on the substrate is 1-W%, and the molar content of a single alloy element at this place of the film on the substrate is (m z / m)×(1-W%), wherein the centroid x1 is the horizontal position of the tungsten target material, and the centroid x2 is the horizontal position of the alloy target material.

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