Semiconductor production waste gas treatment process

Abstract

The application relates to the technical field of waste gas purification, and relates to a semiconductor production waste gas treatment process, which comprises the following steps: pretreatment, introducing an object into a preposition mechanism to participate in preposition dust removal treatment; air mixing treatment, introducing the object output by the preposition mechanism into an air mixing mechanism to participate in slow flow speed reduction treatment; purification treatment, introducing the object output by the air mixing mechanism into a purification mechanism to participate in plasma combustion purification treatment; cooling treatment, introducing the object output by the purification treatment into a cooling mechanism to participate in cooling treatment; and discharge treatment, discharging the object output by the cooling mechanism through an external discharge mechanism. The application is favorable for solving the problems that some existing plasma purification equipment has difficulty in removing impurities and the purification effect is affected by the change of air flow when treating waste gas.

Description

A semiconductor manufacturing waste gas treatment process Technical Field

[0001] This invention relates to the field of waste gas purification technology, and in particular to a process for treating waste gas from semiconductor manufacturing. Background Technology

[0002] With the rapid development of technology, the semiconductor industry is playing an increasingly important role in the national economy. However, the semiconductor manufacturing process generates a large amount of waste gas from various chemical reactions. If this waste gas is not treated to meet standards, it will cause serious harm to the environment.

[0003] Plasma purifiers, also known as low-temperature plasma exhaust gas purifiers, utilize low-temperature plasma technology to treat pollutants. The principle is as follows: under the influence of an external electric field, a large number of energetic electrons generated by dielectric discharge bombard pollutant molecules, causing them to ionize, dissociate, and excite. This triggers a series of complex physical and chemical reactions, transforming complex macromolecular pollutants into simple, safe small molecules, or converting toxic and harmful substances into non-toxic, harmless, or low-toxicity substances, thereby degrading and removing the pollutants. Because the average energy of the electrons generated after ionization is around 10 eV, appropriate control of reaction conditions can make chemical reactions that are normally difficult or slow become very rapid. Therefore, plasma purification technology has been widely applied in fields such as exhaust gas purification and air purification.

[0004] The inventors discovered the following shortcomings in current methods for treating waste gas generated during semiconductor manufacturing: 1. Waste gas generated in some semiconductor manufacturing processes carries a large number of fine particulate impurities. Currently, directly introducing it into small-scale plasma purification equipment and relying solely on rudimentary filters for coarse filtration still leaves a large amount of fine particulate matter, which negatively impacts the plasma reaction area, such as particulate matter adsorbing onto electrodes and clogging internal pipe spaces; 2. The collection of waste gas generated during semiconductor manufacturing exhibits significant fluctuations, meaning that the amount of waste gas input into the plasma purification equipment varies, sometimes large and sometimes small, sometimes rapid and sometimes slow. This can lead to the escape of some pollutants in the waste gas under high-volume, high-flow-rate conditions, affecting the purification quality and stability.

[0005] Therefore, it is necessary to provide a new waste gas treatment process to address the aforementioned shortcomings. Summary of the Invention

[0006] This invention provides a semiconductor manufacturing waste gas treatment process, which helps to solve the problems of existing plasma purification equipment in treating waste gas, such as difficulty in removing impurities and fluctuations in purification effect due to changes in gas flow.

[0007] This invention is implemented as follows:

[0008] A semiconductor manufacturing waste gas treatment process includes: pretreatment, in which the waste gas is introduced into a pre-treatment unit to participate in pre-dust removal treatment, wherein the pre-treatment unit is equipped with a composite hierarchical dust removal module capable of functionally and synergistically intercepting solid particulate matter carried in the waste gas; gas mixing treatment, in which the waste gas output from the pre-treatment unit is introduced into a gas mixing unit to participate in slow flow and deceleration treatment, wherein the gas mixing unit is equipped with an airflow vector control structure for homogenizing and balancing the waste gas within a threshold time period; purification treatment, in which the waste gas output from the gas mixing unit is introduced into a purification unit to participate in plasma combustion purification treatment, wherein the purification unit is equipped with several plasma generating devices operating synchronously, capable of diverting the waste gas for reaction and combustion; cooling treatment, in which the waste gas output from the purification treatment is introduced into a cooling unit for cooling treatment; and emission treatment, in which the waste gas output from the cooling unit is discharged externally through an external discharge unit.

[0009] Based on the above technical solution, the pre-positioning mechanism includes a pre-positioning tower. The bottom side of the pre-positioning tower is provided with an air inlet for introducing objects, and the top is provided with an air outlet for outputting objects. At least an air equalization module, a spraying module, and a demisting module are provided between the air inlet and the air outlet.

[0010] Based on the above technical solution, the gas mixing mechanism includes a gas mixing tank, the input end of the gas mixing tank is connected to several branch pipes, the input ends of each branch pipe are merged and connected to the gas outlet, and the output ends of the branch pipes are evenly distributed on the outer peripheral end face of the gas mixing tank.

[0011] Based on the above technical solution, the airflow vector control structure is disposed inside the diverter tube.

[0012] Based on the above technical solution, the purification mechanism includes a purifier connected to the rear end of the mixing tank. The plasma generating device is a plasma tube located inside the purifier. The plasma tube includes a first electrode and a second electrode spaced apart inside and outside. A working chamber with a cross-sectional profile of an annular cavity is formed between the first electrode and the second electrode. Several working chambers are used for objects to pass through axially to form a diversion purification space structure. The first electrode and the second electrode are respectively connected to a first power supply terminal and a second power supply terminal. The first power supply terminal and the second power supply terminal are respectively electrically connected to an external anode or cathode power supply device. The first electrode and the second electrode can work together to perform plasma treatment on objects passing through the working chamber. A burner is also provided at the bottom of the working chamber.

[0013] Based on the above technical solution, the purifier is provided with a front cavity and a rear cavity on the front and rear sides of the plasma tube, respectively. The front cavity is provided with a number of spaced-apart flow-damping plates, and the burner is located in the rear cavity.

[0014] Based on the above technical solution, the flow control plate is uniformly distributed with several through-hole structures for diversion holes, and the diversion holes on adjacent flow control plates are staggered.

[0015] Based on the above technical solution, a wrapping layer is provided on the outside of the second electrode.

[0016] Based on the above technical solution, the first electrode and the second electrode are each evenly distributed with spikes on adjacent sides.

[0017] Compared with the prior art, the present invention has at least the following advantages:

[0018] 1. This invention, by setting a pre-positioning mechanism at the front end of the purification system that can functionally and synergistically intercept solid particles carried in the object several times, allows the exhaust gas to undergo efficient and stable dust removal before being treated by plasma. Compared with the traditional simple filter structure, this method can greatly reduce the content of fine solid particles carried by the exhaust gas, and make maintenance easier and more convenient. This reduces the negative impact of fine solid particles on the subsequent purification mechanism and process, which is conducive to improving the purification effect and the service life of the overall equipment.

[0019] 2. In addition, the present invention provides a gas mixing mechanism at the front end of the mirror lake mechanism. The gas mixing mechanism is equipped with an airflow vector control structure for the object, which is used to homogenize and balance the object within a threshold time period. This makes the pollutant content distribution in the object entering the purification mechanism relatively uniform, and the airflow velocity of the object's exhaust gas entering the purification mechanism relatively mild and stable, with a significant reduction in fluctuation. On this basis, combined with several plasma generating devices that can operate synchronously in the purification mechanism, the object can be diverted for reaction and combustion, further breaking down the object into "fragments". This makes the reaction and combustion as complete and efficient as possible, thereby improving the purification quality. Attached Figure Description

[0020] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained from these drawings without creative effort.

[0021] Figure 1 is a simplified diagram of the equipment structure for a waste gas treatment process in one embodiment;

[0022] Figure 2 is a simplified diagram of the internal structure of the front tower in Figure 1;

[0023] Figure 3 is a schematic diagram of the mixing tank and the splitter pipe in Figure 1;

[0024] Figure 4 is a simplified structural diagram of the impeller in one embodiment;

[0025] Figure 5 is a simplified diagram of the internal structure of the purifier in Figure 1;

[0026] Figure 6 is a schematic diagram of the flow buffer in Figure 5;

[0027] Figure 7 is a schematic diagram of the airflow path through the front cavity;

[0028] Figure 8 is a simplified structural diagram of the ion tube in Figure 5;

[0029] Figure 9 is a simplified structural diagram of the plasma tube in another embodiment.

[0030] The diagram is labeled as follows: 1. Pre-tower; 11. Air inlet; 12. Air outlet; 13. Gas equalization module; 14. Spray module; 15. Demisting module; 2. Diverter pipe; 21. Impeller; 22. Bearing; 3. Mixing tank; 31. Air supply port; 32. Spiral guide vane; 4. Purifier; 41. Plasma tube; 411. First electrode; 412. Second electrode; 413. Working chamber; 414. Coating layer; 415. First power supply terminal; 416. Second power supply terminal; 417. Spike; 42. Front chamber; 43. Rear chamber; 44. Combustion component; 45. Flow buffer; 451. Diverter hole; 5. Cooler; 6. Post-tower. Detailed Implementation

[0031] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention.

[0032] In the description of this invention, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0033] It should be noted that when an element is referred to as being "fixed to" another element, it can be directly on the other element or there may be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the element or there may be an intervening element. The terms "vertical," "horizontal," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only possible implementation.

[0034] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments.

[0035] A semiconductor manufacturing waste gas treatment process includes: pretreatment, in which the waste gas is introduced into a pre-treatment unit to participate in pre-dust removal treatment, wherein the pre-treatment unit is equipped with a composite hierarchical dust removal module capable of functionally and synergistically intercepting solid particulate matter carried in the waste gas; gas mixing treatment, in which the waste gas output from the pre-treatment unit is introduced into a gas mixing unit to participate in slow flow and deceleration treatment, wherein the gas mixing unit is equipped with an airflow vector control structure for homogenizing and balancing the waste gas within a threshold time period; purification treatment, in which the waste gas output from the gas mixing unit is introduced into a purification unit to participate in plasma combustion purification treatment, wherein the purification unit is equipped with several plasma generating devices operating synchronously, capable of diverting the waste gas for reaction and combustion; cooling treatment, in which the waste gas output from the purification treatment is introduced into a cooling unit for cooling treatment; and emission treatment, in which the waste gas output from the cooling unit is discharged externally through an external discharge unit.

[0036] In the specific implementation process, the waste gas generated during semiconductor production is the object of treatment. This object first passes through a pre-treatment mechanism to remove dust, which fully intercepts the fine particulate matter mixed in with the object. Then, it passes through a gas mixing mechanism to adjust the object density (mainly targeting pollutants carried in the waste gas) and flow rate. As a transfer and connection mechanism, it allows the object to be uniformly and slowly transported to the purification mechanism. The purification mechanism treats the object with plasma, using a large number of energetic electrons to bombard pollutant molecules, causing them to ionize, dissociate, and excite. This triggers a series of complex physical and chemical reactions, transforming complex macromolecular pollutants into simple small molecule safe substances, or transforming toxic and harmful substances into non-toxic, harmless, or low-toxic and low-harm substances, thereby degrading and removing pollutants. Combined with combustion, the object is fully purified. After purification, the object is cooled by a cooling mechanism and finally discharged by an external discharge mechanism (the discharge method depends on the actual situation; it can be discharged into the plant for further processing or directly discharged into the atmosphere in a compliant state).

[0037] Example 1:

[0038] Referring to Figure 1, the equipment involved in this embodiment includes: a pre-treatment tower 1, a diversion pipe 2, a mixing tank 3, a purifier 4, a cooler 5, and a post-treatment tower 6.

[0039] The pre-tower 1 serves as a pre-processing mechanism. The bottom side of the pre-tower 1 is provided with an air inlet 11 for introducing objects, and the top has an air outlet 12 for outputting objects. During operation, exhaust gas enters the inner cavity of the pre-tower 1 from the air inlet 11 and is output through the air outlet 12 after rising. Between the air inlet 11 and the air outlet 12, there are spaced gas equalization modules 13, spray modules 14 and demisting modules 15 arranged from low to high.

[0040] Furthermore, the gas equalization module 13 includes an assembly frame uniformly filled with PP multifaceted hollow spheres. The gas equalization module 13 covers the entire cross-sectional area of ​​the pre-tower 1 and disperses the upward path into an irregular path. This helps the exhaust gas to pass through the gas equalization module 13 along an irregular path during its upward movement, resulting in a rapid decrease in airflow velocity. The decrease in airflow velocity causes some of the larger particles in the exhaust gas to fall off due to their own weight and not continue to rise. In addition, during this process, the exhaust gas will have a lot of contact with the PP multifaceted hollow spheres, and the contact will also cause some fine particles to be adsorbed onto the PP multifaceted hollow spheres. Therefore, the first module can achieve a good effect of dispersing, slowing down, and intercepting particles.

[0041] Furthermore, the spray module 14 is located above the gas distribution module and has several atomizing nozzles (not shown in the figure, which are existing technologies, and their specific structure and working principle will not be described here). Its main function is to provide comprehensive spraying treatment for the upward-moving exhaust gas in the area below. In this embodiment, the spraying medium is clean water. In other embodiments, suitable chemical liquids can also be used. The spraying treatment will further intercept fine particulate matter in the exhaust gas. Specifically, fine particulate matter is easily captured by the fine water droplets generated after atomization and falls down together. Another function of the spray module 14 is to rinse and clean the gas distribution module 13 below.

[0042] Furthermore, two spaced-apart demisting modules 15 are provided above the spray module 14, specifically as demisters, to intercept small amounts of fine water droplets in the exhaust gas passing through the spray module 14, ensuring that the output exhaust gas has suitable dryness conditions.

[0043] As shown in Figure 3, the gas mixing mechanism includes a cylindrical gas mixing tank 3. The input end of the gas mixing tank 3 is connected to six diversion pipes 2. The input ends of each diversion pipe 2 are merged and connected to the gas outlet 12. The output ends of the diversion pipes 2 are evenly distributed on the outer peripheral end face of the gas mixing tank 3 and are arranged in a centrally symmetrical manner. This allows the airflow path to complete a diversion and re-aggregation process in a "total-diversion-total" manner when the exhaust gas enters the gas mixing tank 3 from the pre-tower 1. This obviously can "mix" the exhaust gas, so that the pollutant content contained in each area of ​​the exhaust gas inside the gas mixing tank 3 is relatively evenly distributed within a certain period of time.

[0044] Furthermore, the output end of the mixing tank 3 is provided with an air supply port 31. The mixing tank 3 has 6 spiral guide plates 32 in the area surrounding the air supply port 31. The spiral guide plates 32 have a raised flange structure, which can serve as a guide structure for the exhaust gas. This allows the exhaust gas in the mixing tank 3 to tend to travel in a vortex manner when it is output through the air supply port 31. This structure will cause the exhaust gas in the mixing tank 3 to be "stirred" again and have a similar effect to the "rhythm principle" on the airflow, so that the exhaust gas is output in a relatively strong manner. In other words, the exhaust gas is split, mixed, "stirred", and accelerated in the mixing tank 3 before being output. In addition, the mixing tank 3, as a receiving structure, also constitutes a transfer station structure, allowing the gas to be buffered and briefly stay here for a certain period of time. This helps to buffer and neutralize the disturbance caused by unstable gas supply at the input end, so as to output it in a more gentle and stable state.

[0045] Furthermore, as shown in Figure 4, the diversion pipe 2 in this embodiment is equipped with an impeller 21. The impeller 21 serves as an airflow vector control structure. The shaft of the impeller 21 is arranged radially along the diversion pipe 2. Both ends of the shaft are pivotally connected to the inner wall of the diversion pipe 2 via bearings 22. This allows the exhaust gas to interact with the blades of the impeller 21 when passing through the diversion pipe 2, converting some of the kinetic energy of the exhaust gas into the potential energy of the impeller 21. In other words, the impeller 21 can automatically adjust the exhaust gas flow rate in the diversion pipe 2 to a certain extent. Overall, when a whole mass of exhaust gas is diverted through multiple diversion pipes 2, even if there are differences in the airflow speed in each diversion pipe 2, these differences will be adjusted by the impeller 21 in each diversion pipe 2. This reduces the difference in airflow speed when the gas is input into the mixing tank 3 from each diversion pipe 2, which is beneficial for achieving a higher quality "mixing" effect in the mixing tank 3.

[0046] As shown in Figure 5, the purification mechanism includes a purifier 4 connected to the rear end of the mixing tank 3. The purifier 4 is located on the front and rear sides of the plasma tube 41, respectively, with a front chamber 42 and a rear chamber 43. The front chamber 42 is connected to the gas supply port 31. The front chamber 42 is provided with three spaced-apart buffer plates 45. The rear chamber 43 is provided with a burner 44 (which is existing technology, and its specific structure and working principle will not be described here). The burner 44 can provide an open flame to ensure that the combustible components in the plasma are fully combusted.

[0047] As shown in Figure 6, the flow-damping plate 45 is a single disc structure with several flow-diverting holes 451 penetrating the plate. It should be noted that the front end of each flow-diverting hole 451 has a conical opening with a smooth curved surface. This structure provides better guidance and smoothness for the airflow as it passes through the flow-diverting holes 451. Furthermore, as shown in Figure 7, the through holes on adjacent flow-damping plates 45 are staggered. This causes the airflow direction to shift to some extent after passing through each flow-damping plate 45, which helps to reduce airflow speed and create a uniform flow distribution effect.

[0048] Furthermore, referring to Figure 5, the plasma generating device is a plasma tube 41 located inside the purifier 4. The plasma tube 41 includes a first electrode 411 and a second electrode 412 spaced apart internally and externally. A working chamber 413 with a cross-sectional profile of an annular cavity is formed between the first electrode 411 and the second electrode 412. Several working chambers 413 are used to allow objects to pass through axially to form a diversion purification space structure. The first electrode 411 and the second electrode 412 are respectively connected to a first power supply terminal 415 and a second power supply terminal 416. The first power supply terminal 415 and the second power supply terminal 416 are electrically connected to an external anode or cathode power supply device through wiring terminals and cables. The first electrode 411 and the second electrode 412 can work together to perform plasma treatment on objects passing through the working chamber 413. This is existing technology, and its specific structure and working principle will not be described in detail here. This embodiment only innovates the design of the structural distribution of the first electrode 411 and the second electrode 412, without substantially changing its working principle. It only changes the layout of the working space, thereby obtaining a more uniform coverage area and a slow and sufficient reaction effect.

[0049] The working chamber 413 is connected to the front chamber 42 and the rear chamber 43 at both ends of its axial direction, forming a unidirectional airflow path.

[0050] After the exhaust gas is treated, the plasma region e mainly forms gases such as He, BCI3, C4F6, 4% H2 / N2, CH2F2, AR, SiCI4, CHF3, SF6N2, CH3F, COS, NF3, CH4, O2, HBr, CF4, and CI2. This plasma technology is existing, and the working principle underlying its operation will not be elaborated here.

[0051] As shown in Figure 8, the plasma tube 41 is provided with a ceramic material coating layer 414 on its outer side. This structure can form a protective layer structure on the outside of the plasma tube 41. The high temperature resistance and high hardness of the ceramic material are beneficial for protecting the structure and extending its service life, making its internal structure more stable and unaffected by external environmental factors during actual operation.

[0052] Furthermore, referring to Figure 1, a cooling mechanism is connected to the rear of the purifier 4. Specifically, the cooling mechanism includes a cooler 5 with a liquid cooling module. The cooler 5 has a double-layered shell, with the interlayer cavity used for the circulation of coolant (water). It is connected to an external cooling module via pipes and a pump. In other embodiments, other cooling media may also be used.

[0053] Furthermore, the cooler 5 is equipped with an external controller for connecting to external pipes. The external controller has an opening and closing control structure, specifically a solenoid valve. The external controller can be used to connect to an external air supply line. During the exhaust gas purification process, the external controller is in a closed state. When the exhaust gas purification is completed or equipment maintenance is interrupted, the external controller switches to an open state, and the external air supply line can provide positive pressure air to the inside of the cooler 5, thereby allowing the residual gas inside the cooler 5 to be fully discharged, thus reducing safety hazards.

[0054] As shown in Figure 1, the output end of the cooler 5 is provided with an external discharge mechanism, specifically a post-tower 6. The post-tower 6 actually adopts an external discharge pipe. In this embodiment, the post-tower 6 is used to discharge the gas after it has been cooled by the cooler 5.

[0055] In the specific implementation process, the first electrode 411 in this embodiment is located on the inner side and can act as an anode when working; the second electrode 412 is arranged around the outer side of the first electrode 411 and acts as a cathode. Under the action of the external high-voltage electric field applied by the external power supply device, the two will discharge in the working chamber 413 and generate a large number of energetic electrons to bombard pollutant molecules, causing them to ionize, dissociate and excite, thus purifying the exhaust gas passing through this area. Since the exhaust gas has been filtered by the filter plate and slowed down and diverted by the flow plate 45 before entering the working chamber 413, the pollutant molecules carried in the gas will be more evenly distributed and diverted through the working chamber 413 at a suitable speed, which obviously helps to improve the purification effect.

[0056] Example 2:

[0057] Based on Embodiment 1, and referring to Figure 9, the first electrode 411 and the second electrode 412 are each evenly distributed with spikes 417 on adjacent sides. The presence of spikes 417 firstly makes the internal contour of the working chamber 413 more complex and rough, which increases the friction force when the airflow passes through, further slowing down the airflow and allowing the airflow to stay in the working chamber 413 for a longer time; secondly, the structure of the spikes 417 can form a complex and rich guiding "vein" structure between the first electrode 411 and the second electrode 412, making the plasma generation inside the working chamber 413 more uniform and covering a larger area, thereby further improving the purification effect.

[0058] In other embodiments, in order to further improve the heat preservation effect of the purifier 4, the purifier 4 is also provided with a heat preservation structure on the outside, which can be wrapped with heat preservation cotton.

[0059] In other embodiments, the front chamber 42 of the purifier 4 is connected to an auxiliary gas supply pipeline (not shown in the figure). During operation, nitrogen gas continuously enters the front chamber 42 through the auxiliary gas supply pipeline. Simultaneously, the gas from the waste gas mixing tank 3 enters the front chamber 42. The two gases are fully mixed in the front chamber 42 before flowing into the working chamber 413. The role of nitrogen gas is to provide a stable airflow, ensuring that the working chamber 413 and the rear chamber 43 are always under positive pressure. This helps prevent gas backflow in the rear internal structure, which could carry impurities and cause blockage of the pipeline. In addition, nitrogen gas can also help with plasma formation.

[0060] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A semiconductor manufacturing waste gas treatment process, characterized in that, The process includes: pretreatment, in which the object is introduced into a pre-treatment mechanism to participate in pre-dust removal, the pre-treatment mechanism being equipped with a composite hierarchical dust removal module capable of functionally and synergistically intercepting solid particles carried by the object multiple times; and gas mixing treatment, in which the object output from the pre-treatment mechanism is introduced into a gas mixing mechanism to participate in slow-flow and deceleration treatment, the gas mixing mechanism including a gas mixing tank, the input end of the gas mixing tank being connected to several diverter pipes, the input ends of each diverter pipe being merged and connected to the air outlet of the pre-treatment mechanism, and the output ends of the diverter pipes being evenly distributed on the outer peripheral end face of the gas mixing tank; and the gas mixing mechanism being equipped with an airflow vector targeting the object. The flow control structure is used to homogenize and balance objects within a threshold time period. The airflow vector control structure is a rotatable impeller located inside the diversion pipe. Six spiral guide vanes are provided around the air supply port of the mixing tank. The purification process involves introducing the objects output from the mixing mechanism into the purification mechanism to participate in plasma combustion purification. The purification mechanism is equipped with several plasma generating devices that operate synchronously, capable of diverting the objects for reaction and combustion. The cooling process involves introducing the objects output from the purification process into the cooling mechanism for cooling. The emission process involves discharging the objects output from the cooling mechanism through the exhaust mechanism.

2. The semiconductor manufacturing waste gas treatment process according to claim 1, characterized in that, The pre-processing mechanism includes a pre-processing tower (1), which has an air inlet (11) for introducing objects on one side of its bottom and an air outlet (12) for outputting objects on its top. At least one air equalization module (13), a spraying module (14) and a demisting module (15) are provided between the air inlet (11) and the air outlet (12).

3. The semiconductor manufacturing waste gas treatment process according to claim 2, characterized in that, The purification mechanism includes a purifier (4) connected to the rear end of the mixing tank (3). The plasma generating device is a plasma tube (41) located inside the purifier (4). The plasma tube (41) includes a first electrode (411) and a second electrode (412) spaced apart inside and outside. A working chamber (413) with a cross-sectional profile of an annular cavity is formed between the first electrode (411) and the second electrode (412). Several working chambers (413) are used to allow objects to pass through axially to form a diversion purification space structure. The first electrode (411) and the second electrode (412) are respectively connected to a first power supply terminal (415) and a second power supply terminal (416). The first power supply terminal (415) and the second power supply terminal (416) are respectively electrically connected to an external anode or cathode power supply device. The first electrode (411) and the second electrode (412) can work together to perform plasma treatment on objects passing through the working chamber (413). A burner (44) is also provided at the bottom of the working chamber (413).

4. The semiconductor manufacturing waste gas treatment process according to claim 3, characterized in that, The purifier (4) is provided with a front cavity (42) and a rear cavity (43) on the front and rear sides of the plasma tube (41), respectively. The front cavity (42) is provided with a number of spaced-out flow plates (45), and the burner (44) is located in the rear cavity (43).

5. The semiconductor manufacturing waste gas treatment process according to claim 4, characterized in that, The flow control plate (45) has a number of through holes (451) evenly distributed on it, and the flow control holes (451) on adjacent flow control plates (45) are staggered.

6. The semiconductor manufacturing waste gas treatment process according to claim 3, characterized in that, The second electrode (412) has a wrapping layer (414) on its outer side.

7. The semiconductor manufacturing waste gas treatment process according to claim 3, characterized in that, The first electrode (411) and the second electrode (412) are each evenly distributed with spikes (417) on adjacent sides.

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