A semiconductor device and a method of fabricating the same

By oxidizing the germanium-doped silicon layer to form a germanium-silicon oxide layer and then removing it, the single-crystal silicon layer is exposed, which solves the problems of increased interface state density and interface roughness caused by germanium doping in GAA devices, and improves carrier mobility and device performance.

CN117423620BActive Publication Date: 2026-09-11SHANGHAI INTEGRATED CIRCUIT RESEARCH & DEVELOPMENT CENTER CO LTD
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Patent Information

Application Number
CN202210853682.5
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-07-11
Publication Date
2026-09-11
Estimated Expiration
2042-07-11

AI Technical Summary

Technical Problem

In the prior art, after high-temperature processing, germanium doping of silicon in GAA devices leads to an increase in interface state density and interface roughness at the silicon layer interface, which affects carrier mobility and device performance.

Method used

By oxidizing the germanium-doped silicon layer to form a germanium-silicon oxide layer and then removing the germanium-silicon oxide layer, a single-crystal silicon layer is exposed, forming a complete single-crystal silicon channel, thereby reducing the interface state density and interface roughness.

Benefits of technology

It improves carrier mobility and device performance by forming a complete single-crystal silicon channel on the silicon layer surface, reducing interface state density and interface roughness, and thus enhancing the overall performance of the device.

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Abstract

The application provides a semiconductor device and a manufacturing method thereof. The method comprises the following steps: providing a substrate, the substrate is formed with alternately stacked germanium-silicon layers and silicon layers, germanium in the germanium-silicon layers diffuses into the silicon layers to form germanium-doped silicon layers on the surfaces of the silicon layers; removing the germanium-silicon layers; oxidizing the germanium-doped silicon layers to form germanium-silicon oxide layers; removing the germanium-silicon oxide layers to expose the surfaces of the silicon layers, and forming monocrystalline silicon on the exposed surfaces of the silicon layers, the monocrystalline silicon and the silicon layers jointly form a silicon channel. The germanium-silicon oxide layers are formed by oxidizing the germanium-doped silicon layers, the germanium-silicon oxide layers are removed and the monocrystalline silicon is formed on the exposed surfaces of the silicon layers, the germanium-doped silicon layers with germanium doping and high interface state density are converted into the monocrystalline silicon without germanium doping and with complete lattice structure, the interface roughness is reduced, the interface state density is reduced, and thus the carrier mobility of the device and the performance of the device are improved.
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