OLED display panel and preparation method thereof

Abstract

The present invention provides an OLED display panel and a method for manufacturing the same, comprising: an array substrate including TFT devices arranged in an array; light-emitting devices disposed on the array substrate, the light-emitting devices including an upper electrode, a lower electrode, and a light-emitting functional layer located between the upper and lower electrodes, the array substrate having routing openings corresponding to adjacent light-emitting devices; an insulating layer disposed on the upper electrodes of the light-emitting devices, the insulating layer having through holes for leakage from the upper electrodes; a pixel definition layer disposed on the array substrate and at least partially covering the edges of the light-emitting devices, the pixel definition layer including at least pixel openings corresponding to the light-emitting devices; and a third electrode disposed on the pixel definition layer. The upper electrode is electrically connected to the TFT devices via the third electrode, and the lower electrode is electrically connected to routing on the array substrate. Application of the technical solution of the present invention can improve the technical problem of poor display performance in related technologies.

Description

Technical Field

[0001] The present invention relates to the technical field of OLED display panels, and in particular to an OLED display panel and a preparation method thereof. Background Art

[0002] In the related art, direct patterning of OLED (Organic Light-Emitting Diode) specifically involves patterning the anode, cathode, and light-emitting functional layer. There are several methods: 1. Fine metal mask, which is a thin layer of metal, namely alloy foil, with a thickness generally within 100μm. Corresponding holes are prepared on the film as needed. The OLED material is evaporated onto the substrate through these holes to form a corresponding pattern. In this method, the metal mask is consumable and expensive, which also wastes a lot of OLED material. At the same time, the PPI (Pixels Per Inch) can only be around 400, thereby increasing production costs. 2. IJP (inkjet printing) printing method. This method uses expensive printers and is limited by printing accuracy. The PPI can only be around 200. At the same time, this method has a poor yield. The above two methods can only produce display panels with a low PPI. At the same time, the product yield of the device cannot be guaranteed, which cannot meet the production needs of the device.

[0003] With the development of technology, OLED panels can be patterned using the eLEAP ("environment positive", "Lithography with maskless deposition", "Extreme long life, low power, and high luminance", and "Any shape Patterning") method. This method alternates between OLED evaporation, photolithography, and dry etching. However, the dry etching process will damage the OLED light-emitting material or the anode surface, resulting in a decrease in the display performance of the device, which in turn cannot meet the device's usage requirements. Summary of the Invention

[0004] The embodiments of the present invention provide an OLED display panel and a method for manufacturing the same, which can improve the technical problem of poor display performance in related technologies.

[0005] In a first aspect, an embodiment of the present invention provides an OLED display panel, comprising: an array substrate comprising TFT devices arranged in an array; a light-emitting device arranged on the array substrate, the light-emitting device comprising an upper electrode, a lower electrode, and a light-emitting functional layer located between the upper electrode and the lower electrode, the array substrate having wiring openings corresponding to wiring between adjacent light-emitting devices; an insulating layer arranged on the upper electrode of the light-emitting device, the insulating layer being provided with a through hole leaking out of the upper electrode; a pixel definition layer arranged on the array substrate and at least partially covering an edge of the light-emitting device, the pixel definition layer at least comprising a pixel opening corresponding to the light-emitting device; a third electrode arranged on the pixel definition layer, one end of the third electrode being electrically connected to the upper electrode through the through hole, and the other end of the third electrode being electrically connected to the TFT device through the wiring opening; wherein, the upper electrode is electrically connected to the TFT device through the third electrode, and the lower electrode is electrically connected to the wiring on the array substrate.

[0006] In one embodiment, the upper electrode is a transparent anode and the lower electrode is a reflective cathode.

[0007] In one embodiment, the upper electrode is a reflective anode, and the lower electrode is a transparent cathode.

[0008] In one embodiment, the TFT includes a gate, an active layer, and a source / drain located above the gate. The array substrate also includes a cathode signal line, which is located on the same layer as the source / drain. The transparent anode is electrically connected to the source, and the transparent cathode or reflective cathode is electrically connected to the cathode signal line.

[0009] In one embodiment, the array substrate further includes a light shielding layer, the light shielding layer is located below the TFT device, and the drain is electrically connected to the active layer and the light shielding layer.

[0010] In one embodiment, an encapsulation layer is disposed above the OLED display panel, and the encapsulation layer at least covers the light-emitting device, the pixel definition layer, and the opening on the pixel definition layer.

[0011] In a second aspect, an embodiment of the present invention provides a method for preparing an OLED display panel, providing an array substrate, the array substrate including TFT devices arranged in an array; forming a light-emitting device layer on the array substrate, and forming an insulating layer on the surface of the light-emitting device layer, patterning the light-emitting device layer and the insulating layer to form light-emitting devices of the same color, the light-emitting devices including an upper electrode, a lower electrode, and a light-emitting functional layer located between the upper electrode and the lower electrode, the array substrate having a wiring opening corresponding to between adjacent light-emitting devices, the insulating layer being arranged on the upper electrode of the light-emitting device, and the insulating layer being provided with a through hole leaking out of the upper electrode; repeating the above steps to complete the preparation of light-emitting devices of different colors; forming a pixel definition layer on the array substrate, and forming a pixel opening at a position corresponding to the light-emitting device, the pixel definition layer at least partially covering the edge of the light-emitting device; forming a third electrode on the pixel definition layer, one end of the third electrode being electrically connected to the upper electrode through the pixel opening, and the other end of the third electrode being electrically connected to the TFT device through the wiring opening, wherein the upper electrode is electrically connected to the TFT device through the third electrode, and the lower electrode is electrically connected to the wiring on the array substrate.

[0012] In one embodiment, the step of completing the preparation of light-emitting devices of different colors includes: sequentially forming red, green, and blue light-emitting devices.

[0013] In one embodiment, after forming the pixel definition layer on the array substrate, the method further includes forming an encapsulation layer on the light-emitting device, the pixel definition layer, and the opening on the pixel definition layer.

[0014] In one embodiment, the light emitting device layer and the insulating layer are formed by deposition or evaporation.

[0015] In a third aspect, an embodiment of the present invention provides a display device, which includes the above-mentioned OLED display panel.

[0016] By applying the technical solution of the present invention, an insulating layer is provided on the upper electrode, which can prevent etching and other processes from damaging the structure of the light-emitting device, thereby protecting the structure of the light-emitting device to ensure that the light-emitting device can work normally without affecting the display performance of the device. In addition, a pixel definition layer is provided between two adjacent light-emitting devices to prevent mutual interference between adjacent light-emitting devices, thereby improving the stability of the device during operation to meet the use requirements of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0018] Figure 1 is a schematic cross-sectional view of an OLED display panel provided by an embodiment of the present invention;

[0019] Figure 2 is a diagram of a manufacturing process of an OLED display panel provided by an embodiment of the present invention;

[0020] Figure 3 is a diagram of a manufacturing process of an OLED display panel provided by an embodiment of the present invention;

[0021] Figure 4 is a diagram of a manufacturing process of an OLED display panel provided by an embodiment of the present invention;

[0022] Figure 5 is a diagram of a manufacturing process of an OLED display panel provided by an embodiment of the present invention;

[0023] Figure 6 is a diagram of a manufacturing process of an OLED display panel provided by an embodiment of the present invention;

[0024] Figure 7 This is a flow chart of a method for preparing an OLED display panel provided by an embodiment of the present invention.

[0025] The above drawings include the following reference numerals:

[0026] 11. Trace opening; 12. Source; 13. Third opening; 14. Substrate; 15. Buffer layer; 16. Light shielding layer; 17. Interlayer dielectric layer; 18. Active layer; 19. Gate insulation layer; 101. Gate; 102. Drain; 103. Passivation layer; 104. Planarization layer; 105. Cathode signal trace;

[0027] 21. Lower electrode; 22. Light-emitting functional layer; 23. Upper electrode;

[0028] 30. Insulation layer; 31. Through hole;

[0029] 40. Pixel definition layer;

[0030] 50. a third electrode;

[0031] 60. Encapsulation layer. DETAILED DESCRIPTION

[0032] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making any creative efforts shall fall within the scope of protection of the present invention.

[0033] like Figures 1 to 6 As shown, in the first aspect, an embodiment of the present invention provides an OLED display panel, which includes: an array substrate including TFT devices arranged in an array; a light-emitting device arranged on the array substrate, the light-emitting device including an upper electrode 23, a lower electrode 21, and a light-emitting functional layer 22 located between the upper electrode 23 and the lower electrode 21, and the array substrate having a wiring opening 11 corresponding to the wiring between adjacent light-emitting devices; an insulating layer 30 arranged on the upper electrode 23 of the light-emitting device, and the insulating layer 30 is provided with a through hole 31 leaking out of the upper electrode 23; a pixel definition layer 40 arranged on the array substrate and at least partially covering the edge of the light-emitting device, the pixel definition layer 40 at least including a pixel opening corresponding to the light-emitting device; a third electrode 50 arranged on the pixel definition layer 40, one end of the third electrode 50 being electrically connected to the upper electrode 23 through the through hole 31, and the other end of the third electrode 50 being electrically connected to the TFT device through the wiring opening 11; wherein the upper electrode 23 is electrically connected to the TFT device through the third electrode 50, and the lower electrode 21 is electrically connected to the wiring on the array substrate.

[0034] By applying the technical solution of the present invention, an insulating layer 30 is provided on the upper electrode 23, which can prevent processes such as etching from damaging the structure of the light-emitting device, thereby protecting the structure of the light-emitting device to ensure that the light-emitting device can work normally without affecting the display performance of the device. In addition, a pixel definition layer 40 is provided between two adjacent light-emitting devices to prevent mutual interference between adjacent light-emitting devices, thereby improving the stability of the device during operation to meet the use requirements of the device.

[0035] The TFT device includes a gate 101, an active layer 18, and a source 12 / drain 102 located above the gate 101. The array substrate also includes a cathode signal trace 105, which is located on the same layer as the source 12 / drain 102. A transparent anode is electrically connected to the source 12, and a transparent cathode or a reflective cathode is electrically connected to the cathode signal trace 105. The TFT device can be used to form a pixel driver circuit corresponding to each light-emitting device. The pixel driver circuit can be connected to the light-emitting device to drive the light-emitting device to emit light.

[0036] The array substrate further includes a light shielding layer 16 , which is located below the TFT device. The drain electrode 102 is electrically connected to the active layer 18 and the light shielding layer 16 .

[0037] In the present application, the array substrate also includes a base substrate 14, a buffer layer 15, a gate insulating layer 19, an interlayer dielectric layer 17, a cathode signal line 105, a passivation layer 103 and a planarization layer 104 located on the base substrate 14. These functional layers are configured to form transistors, capacitors and multiple signal lines for pixel driving in the pixel driving circuit. For example, the multiple signal lines may include: power signal lines, data signal lines, reset signal lines, scan signal lines, enable signal lines and initialization signal lines, etc. For details, please refer to the relevant technology and will not be described in detail here. It should be noted that in other examples, the driving circuit layer may also include more or fewer functional layers. For example, it may also include more cathode signal lines 105. The specific setting is based on the needs of the actual product, and this embodiment does not limit this.

[0038] Furthermore, the base substrate 14 can be made of an organic material that has insulating properties and is flexible, thereby enabling heat treatment at temperatures equal to or greater than approximately 450°C. The base substrate 14 can be formed as a single layer, for example, of polyimide, or can be formed as multiple layers of polyimide repeatedly stacked through coating and curing. It can also include one or more inorganic insulating layers, such as silicon oxide or silicon nitride. The buffer layer 15 can provide a planarization layer 104 on the upper surface of the base substrate 14 and can block or prevent impurities and moisture from penetrating from the base into the light-emitting device.

[0039] like Figures 2 to 4 As shown, in the present application, the light emitting device is manufactured on the planarization layer 104 of the array substrate, and R pixels, G pixels and B pixels are obtained through a single photolithography process.

[0040] The gate insulating layer 19 may be a single layer or a plurality of layers including at least one of tetraethylorthosilicate (TEOS), silicon nitride, and silicon oxide.

[0041] The interlayer dielectric layer 17 may be formed as a plurality of layers or a single layer, for example, of tetraethylorthosilicate (TEOS), silicon nitride, or silicon oxide.

[0042] The gate electrode 101 may be formed as a plurality of layers or a single layer including a low-resistance material such as Al, Ti, Mo, Cu, Ni, or an alloy thereof, or a material having high corrosion resistance. The source electrode 12 and the drain electrode 102 may be formed as a plurality of layers or a single layer including a low-resistance material such as Al, Ti, Mo, Cu, Ni, or an alloy thereof, or a material having high corrosion resistance.

[0043] In addition, the gate 101 , the source 12 , and the drain 102 are respectively a control electrode, an input electrode, and an output electrode of the thin film transistor in the driving circuit.

[0044] Optionally, the light-emitting functional layer 22 includes a hole injection layer, a hole transport layer, an electron transport layer and an electron injection layer stacked in sequence.

[0045] The electron transport layer may include a material capable of transporting electrons. The electron transport layer may be intrinsic (undoped) or doped, and doping may be used to enhance conductivity. This embodiment does not limit the material of the electron transport layer.

[0046] The electron injection layer may include a material capable of injecting electrons. In some embodiments, the material of the electron injection layer may include sodium fluoride (NaF), or the material of the electron injection layer may include an n-type doped electron transport layer material.

[0047] For example, the electron transport layer and the electron injection layer may be formed by performing an evaporation process using an open mask with an opening in the display region (or light emitting region).

[0048] In the present application, the lower electrode 21 is a cathode, the upper electrode 23 is an anode, and the upper electrode 23 is a transparent structure, while the lower electrode 21 is an opaque reflective structure, which can ensure the transparency of the device and improve the display effect.

[0049] Optionally, in other embodiments of the present application, the lower electrode 21 can be set as an anode, and the upper electrode 23 can be set as a cathode. The specific selection should be made according to the use environment of the device, which can improve the applicability and scope of application of the device.

[0050] The "transparency" mentioned in this embodiment does not limit the transmittance to 100%, but rather has a certain transmittance and can achieve a light-transmitting effect. For example, the transparent material may include transparent conductive oxides such as indium tin oxide (ITO) or indium zinc oxide (IZO). For another example, the transparent material may include metal materials such as metallic silver and silver-magnesium alloy, wherein the metallic silver and silver-magnesium alloy can be made to have a very small thickness (for example, 1 nanometer to 10 nanometers) so that they have a certain transmittance (for example, a transmittance greater than 80%). It should be noted that the present disclosure does not limit the material of the upper electrode 23, as long as the material is a transparent conductive material.

[0051] Specifically, the array substrate further has a plurality of third openings 13, each of which is connected to a corresponding cathode signal trace 105. The lower electrode 21 is connected to the corresponding cathode signal trace 105 through the third openings 13. By setting up the above structure, the cathode signal trace 105 serves as an auxiliary electrode, which can provide a stable current to the lower electrode 21, thereby further ensuring the normal operation of the device.

[0052] Furthermore, the projections of the insulating layer 30 and the corresponding light-emitting devices along the thickness direction of the OLED display panel overlap. This arrangement not only makes the structure of the device integrated, but also facilitates and reduces the processing difficulty of the device, thereby improving the processing efficiency of the device and reducing the production cost of the device.

[0053] Specifically, the OLED display panel also includes an encapsulation layer 60, which is located on a side of the insulating layer 30 and the pixel definition layer 40 that is away from the array substrate. The encapsulation layer 60 can encapsulate the array substrate, preventing external water, oxygen, etc. from invading the interior of the array substrate, thereby protecting the components within the array substrate (such as the light-emitting devices).

[0054] For example, the encapsulation layer 60 may include a first encapsulation layer 60, a second encapsulation layer 60, and a third encapsulation layer 60 stacked in sequence. The materials of the first encapsulation layer 60 and the third encapsulation layer 60 may include inorganic materials, such as silicon nitride, silicon oxide, silicon oxynitride, etc. Inorganic materials have high density and can prevent the intrusion of water, oxygen, etc. For example, the first encapsulation layer 60 and the third encapsulation layer 60 can be formed by a process such as chemical vapor deposition. For example, the material of the second encapsulation layer 60 may include an organic material, such as a polymer material containing a desiccant or a polymer material that can block water vapor, such as a polymer resin. For example, the second encapsulation layer 60 can be formed by a process such as inkjet printing.

[0055] like Figure 7 As shown, in a second aspect, an embodiment of the present invention provides a method for preparing an OLED display panel, the method for preparing an OLED display panel comprising:

[0056] S100, providing an array substrate, wherein the array substrate includes TFT devices arranged in an array;

[0057] S200, forming a light-emitting device layer on an array substrate, and forming an insulating layer 30 on a surface of the light-emitting device layer, patterning the light-emitting device layer and the insulating layer 30 to form light-emitting devices of the same color, wherein the light-emitting devices include an upper electrode 23, a lower electrode 21, and a light-emitting functional layer 22 located between the upper electrode 23 and the lower electrode 21, the array substrate having routing openings 11 corresponding to wiring openings between adjacent light-emitting devices, the insulating layer 30 being disposed on the upper electrodes 23 of the light-emitting devices, and the insulating layer 30 having through holes 31 that leak out of the upper electrodes 23;

[0058] S300, repeat the above steps to complete the preparation of light-emitting devices of different colors;

[0059] S400, forming a pixel definition layer 40 on the array substrate, and forming pixel openings at positions corresponding to the light-emitting devices, wherein the pixel definition layer 40 at least partially covers edges of the light-emitting devices;

[0060] S500. A third electrode 50 is formed on the pixel definition layer 40, one end of the third electrode 50 is electrically connected to the upper electrode 23 through the pixel opening, and the other end of the third electrode 50 is electrically connected to the TFT device through the wiring opening 11, wherein the upper electrode 23 is electrically connected to the TFT device through the third electrode 50, and the lower electrode 21 is electrically connected to the wiring on the array substrate.

[0061] In one embodiment, the steps of completing the preparation of light-emitting devices of different colors specifically include: forming red, green, and blue light-emitting devices in sequence.

[0062] In one embodiment, after the step of forming a pixel definition layer on the array substrate, the method further includes:

[0063] S600 , forming an encapsulation layer 60 on the light-emitting device, the pixel definition layer 40 , and the opening on the pixel definition layer 40 .

[0064] In one embodiment, the light emitting device and the insulating layer 30 are formed by deposition or evaporation.

[0065] By applying the technical solution of the present invention, an insulating layer 30 is provided on the upper electrode 23, which can prevent processes such as etching from damaging the structure of the light-emitting device, thereby protecting the structure of the light-emitting device to ensure that the light-emitting device can work normally without affecting the display performance of the device. In addition, a pixel definition layer 40 is provided between two adjacent light-emitting devices to prevent mutual interference between adjacent light-emitting devices, thereby improving the stability of the device during operation to meet the use requirements of the device.

[0066] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, they indicate the presence of features, steps, operations, devices, components and / or combinations thereof.

[0067] Unless otherwise specifically stated, the relative arrangement of the parts and steps, the numerical expressions and the numerical values ​​set forth in these embodiments do not limit the scope of the present invention. At the same time, it should be understood that, for ease of description, the sizes of the various parts shown in the drawings are not drawn according to the actual proportional relationship. The techniques, methods and equipment known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, the techniques, methods and equipment should be considered as part of the authorization specification. In all examples shown and discussed here, any specific values ​​should be interpreted as being merely exemplary and not as limiting. Therefore, other examples of the exemplary embodiments may have different values. It should be noted that similar numbers and letters represent similar items in the following figures, and therefore, once an item is defined in one figure, it does not need to be further discussed in subsequent figures.

[0068] In the description of the present invention, it should be understood that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "horizontal, vertical, perpendicular, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the device or element referred to must have a specific direction or be constructed and operated in a specific direction. Therefore, they cannot be understood as limiting the scope of protection of the present invention; the directional words "inside and outside" refer to the inside and outside relative to the outline of each component itself.

[0069] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used herein to describe the spatial positional relationship of a device or feature to other devices or features as shown in the figures. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figures. For example, if the device in the drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0070] In addition, it should be noted that the use of terms such as "first" and "second" to limit components is only for the convenience of distinguishing the corresponding components. Unless otherwise stated, the above terms have no special meaning and therefore cannot be understood as limiting the scope of protection of the present invention.

[0071] The foregoing description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Those skilled in the art will readily appreciate that various modifications and variations of the present invention are possible. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention are intended to be within the scope of protection of the present invention.

Claims

1. An OLED display panel, characterized in that: include: An array substrate comprising TFT devices arranged in an array; A light-emitting device is provided on the array substrate, the light-emitting device includes an upper electrode, a lower electrode, and a light-emitting functional layer located between the upper electrode and the lower electrode, and the array substrate has a wiring opening corresponding to the wiring between adjacent light-emitting devices; an insulating layer, disposed on the upper electrode of the light-emitting device, wherein the insulating layer is provided with a through hole leaking out of the upper electrode; a pixel definition layer, disposed on the array substrate and at least partially covering an edge of the light-emitting device, the pixel definition layer at least comprising a pixel opening corresponding to the light-emitting device; a third electrode disposed on the pixel definition layer, wherein one end of the third electrode is electrically connected to the upper electrode through the through hole, and the other end of the third electrode is electrically connected to the TFT device through the wiring opening; The upper electrode is electrically connected to the TFT device through the third electrode, and the lower electrode is electrically connected to the wiring on the array substrate.

2. The OLED display panel according to claim 1, wherein: The upper electrode is a transparent anode, and the lower electrode is a reflective cathode.

3. The OLED display panel according to claim 1, wherein: The upper electrode is a reflective anode, and the lower electrode is a transparent cathode.

4. The OLED display panel according to claim 2 or 3, wherein: The TFT device includes a gate, an active layer, and a source / drain located above the gate, and the array substrate further includes a cathode signal line, and the cathode signal line and the source / drain are located on the same layer; The transparent anode is electrically connected to the source, and the transparent cathode or the reflective cathode is electrically connected to the cathode signal line.

5. The OLED display panel according to claim 4, wherein: The array substrate further includes a light shielding layer, which is located below the TFT device. The drain electrode is electrically connected to the active layer and the light shielding layer.

6. The OLED display panel according to claim 1, wherein: An encapsulation layer is disposed above the OLED display panel, and the encapsulation layer at least covers the light-emitting device, the pixel definition layer, and the opening on the pixel definition layer.

7. A method for preparing an OLED display panel, characterized in that: The method for preparing the OLED display panel includes: Providing an array substrate, the array substrate comprising TFT devices arranged in an array; A light-emitting device layer is formed on the array substrate, and an insulating layer is formed on the surface of the light-emitting device layer. The light-emitting device layer and the insulating layer are patterned to form light-emitting devices of the same color. The light-emitting devices include an upper electrode, a lower electrode, and a light-emitting functional layer located between the upper electrode and the lower electrode. The array substrate has routing openings corresponding to wiring between adjacent light-emitting devices. The insulating layer is disposed on the upper electrodes of the light-emitting devices, and the insulating layer is provided with through holes that leak out of the upper electrodes. Repeat the above steps to complete the preparation of light-emitting devices of different colors; forming a pixel definition layer on the array substrate, and forming a pixel opening at a position corresponding to the light-emitting device, wherein the pixel definition layer at least partially covers an edge of the light-emitting device; A third electrode is formed on the pixel definition layer, one end of the third electrode is electrically connected to the upper electrode through the pixel opening, and the other end of the third electrode is electrically connected to the TFT device through the wiring opening, wherein the upper electrode is electrically connected to the TFT device through the third electrode, and the lower electrode is electrically connected to the wiring on the array substrate.

8. The method for preparing an OLED display panel according to claim 7, wherein: The steps of completing the preparation of light-emitting devices of different colors specifically include: Red, green and blue light emitting devices are formed in sequence.

9. The method for preparing an OLED display panel according to claim 7, wherein: After the step of forming a pixel definition layer on the array substrate, the method further includes: An encapsulation layer is formed on the light emitting device, the pixel definition layer, and the opening on the pixel definition layer.

10. The method for preparing an OLED display panel according to claim 7, wherein: The light emitting device layer and the insulating layer are formed by deposition or evaporation.

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