Hvpe apparatus chamber for reducing parasitic deposition and improving ammonia uniformity

By designing a cyclone tube and using a centrifugal device, the problems of blockage and unevenness in the pre-reaction of GaCl and NH3 in the HVPE process were solved, thereby improving the uniformity of ammonia and the quality of growth, extending the service life of the equipment, and reducing maintenance costs.

CN117646192BActive Publication Date: 2026-03-03NANJING CRYSTAL GROWTH & ENERGY EQUIP CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-12-28
Publication Date
2026-03-03

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Abstract

This invention discloses an HVPE equipment chamber for reducing parasitic deposition and improving ammonia uniformity, comprising a nozzle, a substrate above the nozzle, a cyclone tube connected to the nozzle outlet, and a quartz liner located outside the substrate and the cyclone tube. The cyclone tube has three airflow paths: a first airflow path for NH3 and separator gas, a second airflow path for separator gas, and a third airflow path for GaCl. A centrifugal device is provided in the first airflow path. When NH3 and separator gas pass through the first airflow path, the centrifugal device causes NH3 and separator gas to rotate and centrifuge. Fine grains generated by the diffusion pre-reaction are thrown towards the quartz liner and fall and collect in the collection tank under gravity, while the airflow flows along the wall of the quartz liner towards the center of the substrate. A small portion of the separator gas also forms a jet through the second airflow path and flows perpendicular to the substrate, while GaCl flows through the third airflow path towards the center of the substrate along the perpendicular to the substrate.
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Citation Information

Patent Citations

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