Chip and electronic device
By dividing the chip into sensing regions and utilizing highly sensitive magnetic tunnel junctions to sense magnetic fields and temperatures, the reliability problem of MRAM chips under external magnetic field interference is solved, enabling cost-effective failure location determination and user alerts.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HUAWEI TECH CO LTD
- Filing Date
- 2022-08-30
- Publication Date
- 2026-05-29
AI Technical Summary
In chips containing MRAM, the reliability of the chip is easily affected by interference from the external magnetic field environment, and existing technologies increase packaging costs by adding magnetic field and temperature sensors.
The chip is divided into sensing areas, and the high sensitivity of the first magnetic tunnel junction in the sensing area is used to sense the magnetic field and/or temperature. By setting magnetic tunnel junctions of different diameters during the same wafer etching process, the magnetic field and temperature sensing capabilities of the sensing area are enhanced, and the sensor packaging is reduced.
This enables timely and accurate location determination of chip failure, reduces sensor packaging costs, and improves chip reliability and the accuracy of user alerts.
Smart Images

Figure CN117672285B_ABST