Circuit manufacturing method, conductive thin film, and semiconductor device

Abstract

The application discloses a circuit preparation method, a conductive film and a semiconductor device. The preparation method comprises the following steps: preparing a conductor film layer on a substrate with an adherent metal film layer; preparing a patterned mask layer on the conductor film layer; performing a first electroplating treatment on the conductor film layer with the mask layer to form an electroplating film layer, and then performing a drying treatment; performing a second electroplating treatment on the electroplating film layer to form a first protective film layer; removing the mask layer, and performing a first etching treatment on the exposed conductor film layer; performing a third electroplating treatment on the exposed part of the adherent metal film layer and the first protective film layer after the first etching treatment to form a second protective film layer; performing a roughening treatment on the second protective film layer to remove the part of the second protective film layer; and performing a second etching treatment on the exposed part of the adherent metal film layer after the roughening treatment. The application can wrap the circuit pattern wiring in three dimensions, reduces the lead removing process, reduces the process cost, and improves the efficiency.

Description

Technical Field

[0001] This application relates to the fields of electronic manufacturing and electroplating technology, and in particular to a circuit fabrication method, a conductive thin film, and a semiconductor device. Background Technology

[0002] In the field of electroplating, when encountering patterned multi-layer metal thickening electroplating, it is difficult to achieve multi-layer three-dimensional coverage of the surface wiring structure without separate interconnecting power leads. For example, in the case of copper interconnect electroplating with low oxidation resistance, it is easy to cause reliability risks due to the lack of three-dimensional wrapping on the sides of the pattern wiring, which may eventually lead to the failure of the pattern circuit.

[0003] With the increasing demand for surface metal interconnects on various substrates and the decreasing relative cost, copper and nickel have become the preferred materials for surface wiring in various industries due to their relatively low cost. However, because copper and nickel have very low oxidation resistance, a protective coating must be applied to their surfaces to ensure long-term circuit reliability. Currently, various industries employ different methods of oxidation resistance. Among these, to ensure high reliability and relatively low cost, traditional techniques typically use electroplating for surface protection of copper and nickel wiring.

[0004] Traditional methods for fully protecting copper or nickel interconnects by electroplating involve electroplating individual leads to protect the copper or nickel, which are then removed. While the leads are relatively thin, their ends are not fully encased. Some patterns cannot be properly aligned and encased due to the narrow seams, resulting in a long process and low reliability. Summary of the Invention

[0005] Therefore, it is necessary to provide a circuit fabrication method. The circuit fabrication method of the present invention has fewer steps, higher efficiency, can achieve mass production, and has low cost.

[0006] One embodiment of this application provides a circuit fabrication method.

[0007] A circuit fabrication method includes the following steps:

[0008] Provide a substrate with an adhered metal film layer;

[0009] A conductor thin film layer is prepared on the adhered metal film layer;

[0010] A patterned mask layer is fabricated on the conductor thin film layer;

[0011] The conductor thin film layer having the mask layer is subjected to a first electroplating process to form an electroplated film layer;

[0012] A second electroplating process is performed on the electroplated film layer to form a first protective film layer;

[0013] Remove the mask layer and perform a first etching process on the exposed conductor thin film layer;

[0014] After the first etching process, the exposed portion of the adhesive metal film layer and the first protective film layer are subjected to a third electroplating process to form a fully covered second protective film layer.

[0015] The portion of the second protective film layer attached to the adhered metal film layer is roughened to remove that portion of the second protective film layer;

[0016] The adhered metal film layer is subjected to a second etching process.

[0017] In some embodiments, the substrate includes a ceramic substrate, a silicon wafer, an insulating substrate, or a semiconductor substrate.

[0018] In some embodiments, the ceramic substrate includes an alumina ceramic substrate, an aluminum nitride ceramic substrate; and / or, the semiconductor substrate includes a solar cell.

[0019] In some embodiments, the substrate having an adhered metal film layer is prepared by the following steps: cleaning the substrate with a cleaning agent to remove surface contaminants, the cleaning agent including hydrofluoric acid, hydrochloric acid and pure water, wherein the volume of hydrofluoric acid, hydrochloric acid and pure water is 2~5mL:2~5mL:100mL;

[0020] The adhered metal film layer is prepared on the substrate using a vacuum deposition method.

[0021] In some embodiments, the circuit fabrication method further satisfies at least one of the following conditions:

[0022] (1) The materials for preparing the adhesive metal film include alloys composed of one or more of the following metals: Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti, and W;

[0023] (2) The materials used to prepare the adhered metal film include metal nitrides or metal oxides of Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti or W.

[0024] In some embodiments, the thickness of the adhered metal film is 100 nm to 200 nm.

[0025] In some embodiments, the thickness of the conductor thin film layer is 20 nm to 500 nm.

[0026] In some embodiments, the process of fabricating a patterned mask layer on the conductor thin film layer includes the following steps:

[0027] The materials used to prepare the mask layer include one or more of ink, photoresist, and dry film.

[0028] And / or, when the mask layer is a non-photosensitive material, the mask layer is prepared on the conductor thin film layer by screen printing, spraying or spin coating; when the mask layer is a photosensitive material, the mask layer is prepared on the conductor thin film layer by coating, exposure with a mask, or development technology.

[0029] In some embodiments, when performing a first electroplating process on the conductor thin film layer having the mask layer to form an electroplated film layer, the specific steps include:

[0030] The conductor thin film layer is subjected to degreasing and cleaning treatments in sequence using a degreasing agent, followed by acid immersion activation treatment and cleaning treatment.

[0031] The conductor thin film layer is subjected to a first electroplating treatment.

[0032] In some embodiments, at least one of the following conditions is met during the first electroplating process:

[0033] (1) During the degreasing process, the degreasing time shall be at least 40 seconds;

[0034] (2) During the acid leaching activation treatment, hydrochloric acid with a mass concentration of 5% to 15% is used for acid leaching activation for at least 40 seconds;

[0035] (3) During the cleaning process, high-purity water is used for cleaning for at least 60 seconds.

[0036] In some embodiments, during the first electroplating process, the substrate is placed in a copper plating solution or a nickel plating solution at a current density of 0.5 A / dm². 2 ~15 A / dm 2 Selective electroplating is performed for 30s to 200s, and the thickness of the electroplated film is 2μm to 15μm. After electroplating, the film is rinsed with high-purity water for at least 60s and then dried.

[0037] In some embodiments, when performing a second electroplating process on the electroplated film layer to form a first protective film layer, the specific steps include:

[0038] The electroplated film layer is subjected to degreasing and cleaning treatments in sequence using a degreasing agent, followed by acid immersion activation treatment and cleaning treatment.

[0039] The electroplated film layer is subjected to a second electroplating treatment.

[0040] In some embodiments, at least one of the following conditions is met during the second electroplating process:

[0041] (1) During the degreasing treatment, the degreasing time shall be at least 40 seconds.

[0042] (2) During the acid leaching activation treatment, hydrochloric acid with a mass concentration of 5% to 15% is used for acid leaching activation for at least 40 seconds;

[0043] (3) During the cleaning process, high-purity water is used for cleaning for at least 60 seconds.

[0044] In some embodiments, during the second electroplating process, the substrate is placed in a gold plating solution at a current density of 0.5 A / dm². 2 ~1 A / dm 2 Selective electroplating can be performed, or the substrate can be placed in a tin plating solution at a current density of 0.5 A / dm³. 2 ~10 A / dm 2 Selective electroplating is performed for 3 to 15 minutes, and the thickness of the first protective film layer is 1 to 10 μm. After electroplating, the film is rinsed with high-purity water for at least 60 seconds and then dried.

[0045] In some embodiments, the first etching process on the exposed conductor thin film layer specifically includes the following steps:

[0046] The exposed conductor thin film layer is subjected to a first etching process using wet etching or plasma dry etching.

[0047] In the wet etching process, when the material for preparing the conductor thin film layer is Cu, the etching solution is a mixture of sulfuric acid, sodium persulfate and water, or a mixture of hydrogen peroxide, concentrated sulfuric acid and water, and the etching time is 20s-120s. When the material for preparing the conductor thin film layer is Ni, the etching solution is a mixture of nitric acid, sodium persulfate and water, and the etching time is 20s-100s.

[0048] In plasma dry etching, the argon flow rate is greater than 20 sccm, the etching process pressure is 0.01 Pa to 1 Pa, and the etching time is 10 s to 1000 s.

[0049] In some embodiments, the circuit fabrication method further satisfies at least one of the following conditions:

[0050] (1) The mass-to-volume ratio of sulfuric acid, sodium persulfate and water is 2 mL~3 mL: 1 g~5 g: 10 g~20 g;

[0051] (2) The volume ratio of hydrogen peroxide, concentrated sulfuric acid and water is 1 mL~2 mL: 2 mL~4 mL: 20 mL~40 mL;

[0052] (3) The mass-volume ratio of nitric acid, sodium persulfate and water is 2mL~3mL:1g~5g:10g~20g.

[0053] In some embodiments, when a third electroplating process is performed on the exposed portion of the adhesive metal film layer and the first protective film layer after the first etching process to form a fully covered second protective film layer, the following steps are specifically included;

[0054] After the exposed portions of the adhered metal film layer and the first protective film layer are sequentially degreased and cleaned with a degreasing agent, they are then subjected to acid immersion activation treatment and cleaning treatment.

[0055] The exposed portion of the adhesive metal film layer and the first protective film layer are subjected to a third electroplating treatment to form a fully covered second protective film layer.

[0056] In some embodiments, at least one of the following conditions is met during the third electroplating process:

[0057] (1) During the degreasing process, the degreasing time shall be at least 40 seconds;

[0058] (2) During the acid leaching activation treatment, hydrochloric acid with a mass concentration of 5% to 15% is used for acid leaching activation for at least 40 seconds;

[0059] (3) During the cleaning process, high-purity water is used for cleaning for at least 60 seconds.

[0060] In some embodiments, during the third electroplating process, the substrate is placed in a gold plating solution, a silver plating solution, or a tin plating solution, at a current density of 0.5 A / dm³. 2 ~40 A / dm 2 Selective electroplating is performed for 30s to 200s. The thickness of the second protective film layer (700) is 0.5μm to 1μm. After electroplating, the film is rinsed with high-purity water for at least 60s and then dried.

[0061] In some embodiments, the roughening treatment of the portion of the second protective film layer attached to the adhered metal film layer specifically includes the following steps:

[0062] A portion of the second protective film layer is subjected to wet sandblasting to remove the portion of the second protective film layer attached to the adhered metal film layer. The particle size of the diamond abrasive is 100 mesh to 400 mesh, the sandblasting pressure is 0.1 MPa to 0.3 MPa, the sandblasting time is 20 s to 100 s, the water washing flow rate is 2 L / min to 10 L / min, and the water washing time is 20 s to 100 s.

[0063] After wet sandblasting, the product is dried at a temperature of 50℃ to 80℃ for 20 to 100 seconds.

[0064] In some embodiments, the second etching process for the adhered metal film layer specifically includes the following steps:

[0065] The adhered metal film layer is subjected to a second etching process using wet etching or plasma dry etching.

[0066] In the wet etching process, HF acid etching is used, with an etching time of 20s~100s and a temperature of 25℃~30℃.

[0067] During plasma dry etching, the etching pressure is 0.1 Pa to 1 Pa, the etching gas is argon, the argon flow rate is greater than 20 sccm, and the etching time is 10 s to 1000 s.

[0068] Another embodiment of this application also provides a conductive thin film.

[0069] A conductive thin film is prepared using the aforementioned preparation method.

[0070] Another embodiment of this application also provides a semiconductor device.

[0071] A semiconductor device, comprising a conductive thin film.

[0072] The circuit fabrication method described above can achieve three-dimensional wrapping of the circuit pattern wiring by electroplating thickening without separate interconnecting leads. Specifically, the adhesive metal film layer of this application is composed of alloy or elemental metal. Due to the thin thickness of the adhesive metal film layer, its sheet resistance is between 3 ohms and 10 ohms. Therefore, when a certain power is applied, the current flowing through circuits with different sheet resistances is different, resulting in the final circuit side being able to be electroplated, ultimately forming a three-dimensional wrapping of the pattern. Since a small amount of metal layer electroplating is also performed on the surface of the non-patterned areas, the low-adhesion surface metal on the adhesive metal film layer is removed by a low-intensity roughening process such as sandblasting. Finally, the adhesive metal film layer is etched. This method reduces the lead removal process, lowers process costs, and improves efficiency. Attached Figure Description

[0073] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0074] To gain a more complete understanding of this application and its beneficial effects, the following description will be provided in conjunction with the accompanying drawings. In the following description, the same reference numerals denote the same parts.

[0075] Figures 1-6 This is a schematic diagram of the process flow of the circuit fabrication method according to an embodiment of the present invention.

[0076] Explanation of reference numerals in the attached figures

[0077] 100, Substrate; 200, Adhesive metal film layer; 300, Conductive thin film layer; 400, Mask layer; 500, Electroplated film layer; 600, First protective film layer; 700, Second protective film layer. Detailed Implementation

[0078] To make the above-mentioned objects, features, and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of the present invention. However, the present invention can be practiced in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0079] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0080] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0081] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0082] In the description of this invention, "several" means one or more, "multiple" means two or more, "greater than," "less than," and "exceeding" are understood to exclude the stated number, while "above," "below," and "within" are understood to include the stated number. The use of "first" and "second" in the description is merely for distinguishing technical features and should not be construed as indicating or implying relative importance, or implicitly indicating the number of indicated technical features, or implicitly indicating the order of the indicated technical features.

[0083] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0084] This application provides a circuit fabrication method to address the risks of long processing times and low reliability in traditional methods that involve electroplating protective copper or nickel using individual leads followed by lead removal. These methods often result in unwrapped lead ends and in some patterns failing to align properly due to narrow seams. The circuit fabrication method will be described below with reference to the accompanying drawings.

[0085] The circuit fabrication method provided in this application is exemplary; please refer to [link / reference]. Figure 1 As shown, Figure 1 This is a schematic diagram of the process flow for a circuit fabrication method provided in an embodiment of this application. The circuit fabrication method of this application can be used for the fabrication of multilayer electroplated circuits.

[0086] To more clearly illustrate the structure of the circuit fabrication method, the following description, in conjunction with the accompanying drawings, will introduce the circuit fabrication method.

[0087] An exemplary circuit fabrication method includes the following steps:

[0088] A substrate 100 having an adhered metal film layer 200 is provided;

[0089] A conductor thin film layer 300 is prepared on the adhered metal film layer 200 using a vacuum deposition method;

[0090] A patterned mask layer 400 is fabricated on the conductor thin film layer 300. See below. Figure 1 As shown;

[0091] The exposed portion of the conductor thin film layer 300 with mask layer 400 is subjected to a first electroplating treatment to form an electroplated film layer 500, and then subjected to a drying treatment.

[0092] A second electroplating process is performed on the electroplated film layer 500 to form a first protective film layer 600. (See below) Figure 2 As shown;

[0093] Remove mask layer 400, see Figure 3 As shown; the exposed conductor thin film layer 300 undergoes a first etching process, see [reference]. Figure 4 As shown;

[0094] After the first etching process, a third electroplating process is performed on the exposed portion of the adhesive metal film layer 200 and the first protective film layer 600 to form a fully covered second protective film layer 700. See [link to documentation]. Figure 5 As shown;

[0095] The portion of the second protective film layer 700 attached to the adhered metal film layer 200 is roughened to remove this portion of the second protective film layer 700; and

[0096] The adhered metal film layer 200 is subjected to a second etching process, see [link to documentation]. Figure 6 As shown. The substrate 100 is exposed after the second etching process.

[0097] In some embodiments, the conductor thin film layer 300 is made of Cu or Ni.

[0098] In some embodiments, substrate 100 includes a ceramic substrate, a silicon wafer, an insulating substrate, or a semiconductor substrate.

[0099] In some embodiments, the ceramic substrate 100 includes an alumina ceramic substrate, an aluminum nitride ceramic substrate; and / or, the semiconductor substrate includes a solar cell.

[0100] In some embodiments, the substrate 100 having the adhered metal film layer 200 is prepared by the following steps: the substrate 100 is cleaned with a cleaning agent to remove surface contaminants, the cleaning agent including hydrofluoric acid, hydrochloric acid and pure water, wherein the volume of hydrofluoric acid, hydrochloric acid and pure water is 2~5mL:2~5mL:100mL.

[0101] A metal film layer 200 is prepared on a substrate 100 using a vacuum deposition method.

[0102] In some embodiments, the material used to prepare the adhered metal film layer 200 includes an alloy composed of one or more of the following metals: Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti, and W.

[0103] In some embodiments, the materials used to prepare the adhered metal film 200 include metal nitrides or metal oxides of Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti, or W.

[0104] In some embodiments, the thickness of the adhered metal film layer 200 is 100 nm to 200 nm.

[0105] In some embodiments, the thickness of the conductor thin film layer 300 is 20 nm to 500 nm.

[0106] In some embodiments, the material used to prepare the conductor thin film layer 300 may be the same as or different from the material used to prepare the electroplated film layer 500.

[0107] In some embodiments, when fabricating a patterned mask layer 400 on the conductor thin film layer 300, the following steps are included: the material for fabricating the mask layer 400 includes one or more of ink, photoresist, and dry film.

[0108] In some embodiments, when the mask layer 400 is a non-photosensitive material, the mask layer 400 is prepared on the conductor thin film layer 300 by screen printing, spraying or spin coating. When the mask layer 400 is a photosensitive material, the mask layer 400 is prepared on the conductor thin film layer 300 by coating, exposure with a mask, or development technology.

[0109] In some embodiments, when the conductor thin film layer 300 having the mask layer 400 is subjected to a first electroplating process to form the electroplated film layer 500, the specific steps include the following:

[0110] The conductor thin film layer 300 is subjected to degreasing and cleaning treatments in sequence using a degreasing agent, followed by acid immersion activation treatment and cleaning treatment.

[0111] The conductor thin film layer 300 is subjected to a first electroplating treatment.

[0112] In some embodiments, at least one of the following conditions is met during the first electroplating process:

[0113] (1) During the degreasing process, the degreasing time shall be at least 40 seconds;

[0114] (2) During acid leaching activation treatment, use hydrochloric acid with a mass concentration of 5%~15% for at least 40 seconds;

[0115] (3) When cleaning, use high-purity water to clean for at least 60 seconds.

[0116] In some embodiments, during the first electroplating process, the substrate 100 is placed in a copper plating solution or nickel plating solution of the same material as the conductor thin film layer 300, at a current density of 0.5 A / dm². 2 ~15 A / dm 2 Selective electroplating is performed for 5 to 15 minutes, and the thickness of the electroplated film is 2 to 15 μm. After electroplating, the film is rinsed with high-purity water for at least 60 seconds and then dried.

[0117] In some embodiments, when performing a second electroplating process on the electroplated film layer 500 to form the first protective film layer 600, the specific steps include:

[0118] After the electroplated film layer 500 is degreased and cleaned sequentially using a degreasing agent, it is then subjected to acid immersion activation treatment and cleaning treatment.

[0119] A second electroplating treatment is performed on the electroplated film layer 500.

[0120] In some embodiments, the materials used to prepare the first protective film layer 600 include, but are not limited to, gold, silver, and tin.

[0121] In some embodiments, at least one of the following conditions is met during the second electroplating process:

[0122] (1) During the degreasing process, the degreasing time shall be at least 40 seconds;

[0123] (2) During acid leaching activation treatment, use hydrochloric acid with a mass concentration of 5%~15% for at least 40 seconds;

[0124] (3) When cleaning, use high-purity water to clean for at least 60 seconds.

[0125] In some embodiments, during the second electroplating process, the substrate 100 is placed in a gold plating solution at a current density of 0.5 A / dm². 2 ~1 A / dm 2 Selective electroplating can be performed, or the substrate 100 can be placed in a tin plating solution at a current density of 0.5 A / dm². 2 ~10 A / dm 2 Selective electroplating is performed for 3 to 15 minutes. The thickness of the first protective film layer 600 is 1 μm to 10 μm. After electroplating, the film is rinsed with high-purity water for at least 60 seconds and then dried.

[0126] In some embodiments, the first etching process on the exposed conductor thin film layer 300 specifically includes the following steps:

[0127] The exposed conductor thin film layer 300 is subjected to a first etching process using either wet etching or plasma dry etching. In wet etching, when the conductor thin film layer 300 is made of Cu, the etching solution is a mixture of sulfuric acid, sodium persulfate, and water, or a mixture of hydrogen peroxide, concentrated sulfuric acid, and water, with an etching time of 20-120 seconds. When the conductor thin film layer 300 is made of Ni, the etching solution is a mixture of nitric acid, sodium persulfate, and water, with an etching time of 20-100 seconds. In plasma dry etching, the argon gas flow rate is greater than 20 sccm, the etching process pressure is 0.01 Pa to 1 Pa, and the etching time is 10-1000 seconds.

[0128] In some embodiments, the mass-to-volume ratio of sulfuric acid, sodium persulfate, and water is 2 mL to 3 mL: 1 g to 5 g: 10 g to 20 g.

[0129] In some embodiments, the volume ratio of hydrogen peroxide, concentrated sulfuric acid and water is 1 mL to 2 mL: 2 mL to 4 mL: 20 mL to 40 mL.

[0130] In some embodiments, the mass-to-volume ratio of nitric acid, sodium persulfate, and water is 2 mL to 3 mL: 1 g to 5 g: 10 g to 20 g.

[0131] In some embodiments, when a third electroplating process is performed on the exposed portion of the adhesive metal film layer 200 and the first protective film layer 600 after the first etching process to form a fully covered second protective film layer 700, the specific steps include the following:

[0132] After the exposed portions of the adhered metal film layer 200 and the first protective film layer 600 are sequentially degreased and cleaned with a degreasing agent, they are then subjected to acid immersion activation treatment and cleaning treatment.

[0133] The exposed portion of the adhesive metal film layer 200 and the first protective film layer 600 are subjected to a third electroplating treatment to form a fully covered second protective film layer 700.

[0134] In some embodiments, the materials used to prepare the second protective film layer 700 include, but are not limited to, inert metals such as gold, silver, and tin.

[0135] In some embodiments, at least one of the following conditions is met during the third electroplating process:

[0136] (1) During the degreasing process, the degreasing time shall be at least 40 seconds;

[0137] (2) During acid leaching activation treatment, use hydrochloric acid with a mass concentration of 5%~15% for at least 40 seconds;

[0138] (3) When cleaning, use high-purity water to clean for at least 60 seconds.

[0139] In some embodiments, the degreasing treatment uses a degreasing agent of model S-15S from Chongqing Renfa Technology Co., Ltd.

[0140] In some embodiments, during the third electroplating process, the substrate 100 is placed in a gold plating solution, a silver plating solution, or a tin plating solution, at a current density of 0.5 A / dm³. 2 ~10 A / dm 2 Selective electroplating is performed for 30s to 200s, and the thickness of the second protective film layer 700 is 0.5μm to 1μm. After electroplating, the film is rinsed with high-purity water for at least 60s and then dried.

[0141] In some embodiments, the roughening treatment of the portion of the second protective film layer 700 attached to the adhered metal film layer 200 specifically includes the following steps:

[0142] A portion of the second protective film layer 700 is subjected to wet sandblasting to remove the portion of the second protective film layer 700 attached to the adhered metal film layer 200. The particle size of the diamond abrasive is 100 mesh to 400 mesh, the sandblasting pressure is 0.1 MPa to 0.3 MPa, the sandblasting time is 20 s to 100 s, the water washing flow rate is 2 L / min to 10 L / min, and the water washing time is 20 s to 100 s. Finally, the portion of the second protective film layer 700 on the surface of the adhered metal film layer 200 is removed.

[0143] After wet sandblasting, the product is dried at a temperature of 50℃ to 80℃ for 20 to 100 seconds.

[0144] In some embodiments, the second etching process for the adhered metal film layer 200 specifically includes the following steps:

[0145] The adhered metal film layer 200 is subjected to a second etching process using wet etching or plasma dry etching.

[0146] In the wet etching process, the etching solution includes copper chloride, hydrochloric acid and pure water. The volume ratio of copper chloride, hydrochloric acid and pure water is 1~2mL:5~5mL:50mL, the etching time is 20s~100s, and the temperature is 25℃~30℃.

[0147] When wet etching cannot be used and plasma dry etching is used instead, the etching pressure is 0.1 Pa to 1 Pa, the etching gas is argon, the argon flow rate is greater than 20 sccm, and the etching time is 10 s to 1000 s.

[0148] Another embodiment of this application also provides a conductive thin film.

[0149] A conductive thin film is prepared by a specific method.

[0150] Another embodiment of this application also provides a semiconductor device.

[0151] A semiconductor device comprising the aforementioned conductive thin film.

[0152] In some embodiments, the semiconductor device includes discrete semiconductor devices, optoelectronic semiconductors, logic ICs, analog ICs, memories, etc.

[0153] Another embodiment of this application also provides a solar cell.

[0154] A solar cell comprising the aforementioned conductive thin film.

[0155] Example 1

[0156] This embodiment provides a conductive thin film, which is prepared by the circuit fabrication method described below.

[0157] A circuit fabrication method includes the following steps:

[0158] (1) Select substrate 100, which is a silicon wafer. Use a cleaning agent to clean the substrate 100 to remove surface contaminants. The cleaning agent includes hydrofluoric acid, hydrochloric acid and pure water, wherein the volume of hydrofluoric acid, hydrochloric acid and pure water is 2~5mL:2~5ml:100mL.

[0159] (1) An adhesive metal film 200 is prepared on the surface of a substrate 100 by vacuum deposition; the thickness of the adhesive metal film 200 is 100 nm. The material for preparing the adhesive metal film 200 is metal Al.

[0160] (2) A conductor thin film layer 300 is prepared on the adhered metal film layer 200 by vacuum deposition method. The conductor thin film layer 300 has a thickness of 20 nm and the material for preparing the conductor thin film layer 300 is Cu.

[0161] (3) A patterned mask layer 400 is fabricated on the conductor thin film layer 300, see [reference] Figure 1 As shown, the mask layer 400 is fabricated using photoresist. The mask layer 400 is fabricated on the conductor thin film layer 300 using a mask exposure technique. See [link to documentation]. Figure 1 As shown.

[0162] (4) The conductor thin film layer 300 is degreased with degreasing agent S-15S for 40s, rinsed with high-purity water for 60s, activated by acid immersion in 10% hydrochloric acid for 40s, and rinsed with high-purity water for 60s.

[0163] The exposed portion of the conductor thin film layer 300 undergoes a first electroplating process to form an electroplated film layer 500, see [reference]. Figure 2 As shown, during the first electroplating process, the substrate 100 is placed in a copper plating solution at a current density of 0.5 A / dm³. 2 Selective electroplating was performed for 20 minutes, and the thickness of the electroplated film was 2 μm. After electroplating, the film was rinsed with high-purity water for 60 seconds and then dried.

[0164] (5) The electroplated film layer 500 is degreased with degreasing agent S-15S for 40 seconds, rinsed with high-purity water for 60 seconds, activated by acid immersion in 10% hydrochloric acid for 40 seconds, and rinsed with high-purity water for 60 seconds. A second electroplating treatment is then performed on the electroplated film layer 500 to form the first protective film layer 600. See [link to relevant documentation]. Figure 2 As shown. During the second electroplating process, the substrate 100 is placed in a tin plating solution at a current density of 1 A / dm³. 2 Selective electroplating was performed for 10 minutes, resulting in a first protective film layer of 600 with a thickness of 3 μm. After electroplating, the film was rinsed with high-purity water for 60 seconds and then dried. (See also...) Figure 1 The second step is shown.

[0165] (6) Remove the mask layer 400, see Figure 3 As shown.

[0166] The exposed conductor film layer 300, excluding the electroplated film layer 500, was subjected to a first etching process using wet etching. The etching solution was a mixture of sulfuric acid, sodium persulfate, and water, with a mass-to-volume ratio of 2 mL:1 g:10 g. The etching time was 20 s. (See [link to relevant documentation]). Figure 4 As shown.

[0167] (7) Use degreasing agent S-15S to degrease the exposed part of the adhered metal film layer 200 and the first protective film layer 600 for 40s, clean with high-purity water for 60s, then use hydrochloric acid with a mass concentration of 10% to activate for 40s, and clean with high-purity water for 60s.

[0168] Substrate 100 is placed in a tin plating solution at a current density of 2A / dm². 2 A third electroplating process is then performed for 200 seconds to form a second protective film layer 700 bonded to the adhered metal film layer 200 and the first protective film layer 600. The thickness of the second protective film layer 700 is 1 μm. After electroplating, the film is rinsed with high-purity water for 60 seconds and then dried. See [link to product details] Figure 5 As shown.

[0169] (8) A portion of the second protective film layer 700 on the adhered metal film layer 200 is subjected to wet sandblasting to remove the portion of the second protective film layer 700. The particle size of the diamond is 100 mesh, the sandblasting pressure is 0.1 MPa, the sandblasting time is 100 s, the water washing flow rate is 2 L / min, and the water washing time is 20 s. After wet sandblasting, the material is dried at a temperature of 50 ℃ for 100 s.

[0170] (9) A second etching process is performed on the adhered metal film layer 200 using wet etching to expose a portion of the substrate 100. During wet etching, a 5% KOH solution is used for etching, the etching time is 30 seconds, and the temperature is 30°C. See [link to relevant documentation] Figure 6 As shown.

[0171] Example 2

[0172] This embodiment provides a conductive thin film, which is prepared by the circuit fabrication method described below.

[0173] A circuit fabrication method includes the following steps:

[0174] (1) Select substrate 100, which is an alumina ceramic substrate 100. Use a cleaning agent to clean the substrate 100 to remove surface contaminants. The cleaning agent includes hydrofluoric acid, hydrochloric acid and pure water, wherein the volume of hydrofluoric acid, hydrochloric acid and pure water is 2mL:2mL:100mL.

[0175] (1) An adhesive metal film 200 is prepared on the surface of the substrate 100 by vacuum deposition; the thickness of the adhesive metal film 200 is 200 nm. The materials for preparing the adhesive metal film 200 include a Ni-Cr alloy.

[0176] (2) A conductor thin film layer 300 is prepared on the adhered metal film layer 200 by vacuum deposition. The thickness of the conductor thin film layer 300 is 500 nm. The material for preparing the conductor thin film layer 300 is Ni.

[0177] (3) A patterned mask layer 400 is prepared on the conductor thin film layer 300 by screen printing using ink, see [reference] Figure 1 As shown.

[0178] (4) Use degreasing agent S-15S to degrease the exposed part of the conductor film layer 300 for 40s, clean with high-purity water for 60s, then use 10% hydrochloric acid for acid immersion activation for 40s, and clean with high-purity water for 60s.

[0179] The exposed portion of the conductor thin film layer 300 undergoes a first electroplating process to form an electroplated film layer 500, see [reference]. Figure 2As shown, during the first electroplating process, the substrate 100 is placed in a nickel plating solution at a current density of 5 A / dm². 2 Selective electroplating was performed for 30 minutes, and the thickness of the electroplated film was 8 μm. After electroplating, the film was rinsed with high-purity water for 60 seconds and then dried.

[0180] (5) The conductor thin film layer 300 is degreased with degreasing agent S-15S for 40s, rinsed with high-purity water for 60s, activated by acid immersion in 10% hydrochloric acid for 40s, and rinsed with high-purity water for 60s.

[0181] A second electroplating treatment is performed on the electroplated film layer 500 to form a first protective film layer 600. See [link to documentation]. Figure 2 As shown. During the second electroplating process, the substrate 100 is placed in the gold plating solution at a current density of 0.5 A / dm². 2 Selective electroplating was performed for 30 minutes, and the thickness of the first protective film layer 600 was 3 μm. After electroplating, the film was rinsed with high-purity water for 60 seconds and then dried.

[0182] (6) Remove the mask layer 400, see Figure 3 As shown.

[0183] The exposed conductor thin film layer 300 was subjected to a first etching process using wet etching. The etching solution was a mixture of nitric acid, sodium persulfate, and water, with a mass-to-volume ratio of 2 mL:1 g:10 g. The etching time was 100 s. (See [link to relevant documentation]). Figure 4 As shown.

[0184] (7) Use degreasing agent S-15S to degrease the exposed part of the adhered metal film layer 200 and the exposed part of the electroplated film layer 500 for 40s, clean with high-purity water for 60s, then use hydrochloric acid with a mass concentration of 10% to activate for 40s, and clean with high-purity water for 60s.

[0185] The substrate 100 was placed in the gold plating solution at a current density of 31 A / dm². 2 A third electroplating process is then performed for 1 minute to form a second protective film layer 700 bonded to the adhered metal film layer 200 and the protective film layer 600. The thickness of the second protective film layer 700 is 1 μm. After electroplating, the film is rinsed with high-purity water for 60 seconds and then dried. See [link to product details] Figure 5 As shown.

[0186] (8) A portion of the second protective film 700 on the adhered metal film layer 200 is subjected to wet sandblasting to remove the portion of the second protective film 700. The abrasive particle size is 400 mesh, the sandblasting pressure is 0.2 MPa, the sandblasting time is 20 s, the water washing flow rate is 10 L / min, and the water washing time is 20 s. After wet sandblasting, the film is dried at 80 ℃ for 20 s.

[0187] (9) A second etching process is performed on the adhered metal film layer 200 using plasma dry etching to remove part of the adhered metal film layer 200, exposing part of the substrate 100. The etching pressure is 1 Pa, the etching gas is argon, the argon flow rate is greater than 20 sccm, and the etching time is 100 s. See [link to documentation] Figure 6 As shown.

[0188] The conductive films prepared in Examples 1 and 2 were subjected to performance tests. The test results are shown in Table 1.

[0189] Table 1

[0190]

[0191] In summary, the above-described circuit fabrication method, without individual interconnecting leads, can achieve three-dimensional wrapping of the circuit pattern wiring through electroplating thickening. Specifically, the adhesive metal film layer 200 of this application is composed of an alloy or a single metal. Due to the thin thickness of the adhesive metal film layer 200, its sheet resistance is between 3 ohms and 10 ohms. Therefore, by applying a certain power, the current flowing through circuits with different sheet resistances will be different, resulting in the final circuit side being able to be plated, ultimately forming a three-dimensional wrapping of the pattern. Since a small amount of metal layer electroplating is also performed on the surface of the non-patterned areas, the low-adhesion surface metal on the adhesive metal film layer 200 is removed through a low-intensity roughening process such as sandblasting. Finally, the adhesive metal film layer 200 is etched. This method reduces the lead removal process, lowers process costs, and improves efficiency.

[0192] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0193] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0194] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these modifications and improvements all fall within the scope of protection of the present invention. Therefore, the scope of protection of this patent should be determined by the appended claims.

Claims

1. A circuit fabrication method, characterized in that, Includes the following steps: A substrate (100) with an adhered metal film layer (200) is provided. A conductor thin film layer (300) is prepared on the adhered metal film layer (200). A patterned mask layer (400) is prepared on the conductor thin film layer (300); A first electroplating process is performed on the conductor thin film layer (300) having the mask layer (400) to form an electroplated film layer (500). A second electroplating process is performed on the electroplated film layer (500) to form a first protective film layer (600). Remove the mask layer (400) and perform a first etching process on the exposed conductor thin film layer (300); A third electroplating process is performed on the exposed portion of the adhesive metal film layer (200) and the first protective film layer (600) after the first etching process to form a fully covered second protective film layer (700). The portion of the second protective film layer (700) attached to the adhered metal film layer (200) is roughened to remove that portion of the second protective film layer (700). The adhered metal film layer (200) is subjected to a second etching process.

2. The circuit fabrication method according to claim 1, characterized in that, The substrate (100) includes a ceramic substrate, a silicon wafer, an insulating substrate, or a semiconductor substrate. The ceramic substrate includes an alumina ceramic substrate or an aluminum nitride ceramic substrate, and the semiconductor substrate includes a solar cell.

3. The circuit fabrication method according to claim 1, characterized in that, The substrate (100) with the adhered metal film layer (200) is prepared by the following steps: the substrate (100) is cleaned with a cleaning agent to remove surface contaminants, the cleaning agent including hydrofluoric acid, hydrochloric acid and pure water, wherein the volume of hydrofluoric acid, hydrochloric acid and pure water is 2~5mL:2~5mL:100mL; The adhesive metal film layer (200) is prepared on the substrate (100) using a vacuum deposition method.

4. The circuit fabrication method according to claim 1, characterized in that, The circuit fabrication method also satisfies at least one of the following conditions: (1) The material for preparing the adhesive metal film layer (200) includes an alloy composed of one or more of the following metals: Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti, and W; (2) The materials used to prepare the adhered metal film layer (200) include metal nitrides or metal oxides of Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti or W.

5. The circuit fabrication method according to claim 1, characterized in that, The circuit fabrication method also satisfies at least one of the following conditions: (1) The thickness of the adhered metal film layer (200) is 100nm~200nm; (2) The thickness of the conductor thin film layer (300) is 20nm~500nm.

6. The circuit fabrication method according to any one of claims 1 to 5, characterized in that, When fabricating a patterned mask layer (400) on the conductor thin film layer (300), the following steps are included: The materials used to prepare the mask layer (400) include one or more of ink, photoresist, and dry film; And / or, when the mask layer (400) is a non-photosensitive material, the mask layer (400) is prepared on the conductor thin film layer (300) by screen printing, spraying or spin coating. When the mask layer (400) is a photosensitive material, the mask layer (400) is prepared on the conductor thin film layer (300) by coating, exposure with a mask or development technology.

7. The circuit fabrication method according to any one of claims 1 to 5, characterized in that, When performing a first electroplating process on the conductor thin film layer (300) having the mask layer (400) to form an electroplated film layer (500), the specific steps include the following: The conductor thin film layer (300) is subjected to degreasing treatment and cleaning treatment in sequence using a degreasing agent, and then subjected to acid immersion activation treatment and cleaning treatment. The conductor thin film layer (300) is subjected to a first electroplating treatment.

8. The circuit fabrication method according to claim 7, characterized in that, When performing the first electroplating treatment, at least one of the following conditions must be met: (1) During the degreasing process, the degreasing time shall be at least 40 seconds; (2) During the acid leaching activation treatment, hydrochloric acid with a mass concentration of 5% to 15% is used for acid leaching activation for at least 40 seconds; (3) During the cleaning process, high-purity water is used for cleaning for at least 60 seconds.

9. The circuit fabrication method according to any one of claims 1 to 5 and 8, characterized in that, During the first electroplating process, the substrate (100) is placed in a copper plating solution or a nickel plating solution, and the current density is 0.5 A / dm². 2 ~15 A / dm 2 Selective electroplating is performed for 30s to 200s, and the thickness of the electroplated film (500) is 2μm to 15μm. After electroplating, the film is rinsed with high-purity water for at least 60s and then dried.

10. The circuit fabrication method according to any one of claims 1 to 5 and 8, characterized in that, When performing a second electroplating process on the electroplated film layer (500) to form the first protective film layer (600), the specific steps include the following: The electroplated film layer (500) is subjected to degreasing treatment and cleaning treatment in sequence using a degreasing agent, and then subjected to acid immersion activation treatment and cleaning treatment. The electroplated film layer (500) is subjected to a second electroplating treatment.

11. The circuit fabrication method according to claim 10, characterized in that, When performing the second electroplating process, at least one of the following conditions must be met: (1) During the degreasing process, the degreasing time shall be at least 40 seconds; (2) During the acid leaching activation treatment, hydrochloric acid with a mass concentration of 5% to 15% is used for acid leaching activation for at least 40 seconds; (3) During the cleaning process, high-purity water is used for cleaning for at least 60 seconds.

12. The circuit fabrication method according to any one of claims 1 to 5, 8, and 11, characterized in that, During the second electroplating process, the substrate (100) is placed in a gold plating solution at a current density of 0.5 A / dm³. 2 ~1 A / dm 2 Selective electroplating can be performed, or the substrate (100) can be placed in a tin plating solution at a current density of 0.5 A / dm². 2 ~10 A / dm 2 Selective electroplating is performed for 3 to 15 minutes. The thickness of the first protective film layer (600) is 1 to 10 μm. After electroplating, the film is rinsed with high-purity water for at least 60 seconds and then dried.

13. The circuit fabrication method according to any one of claims 1 to 5, 8, and 11, characterized in that, The first etching process for the exposed conductor thin film layer (300) specifically includes the following steps: The exposed conductor thin film layer (300) is subjected to a first etching process using wet etching or plasma dry etching; In the wet etching process, when the material for preparing the conductor thin film layer (300) is Cu, the etching solution is a mixture of sulfuric acid, sodium persulfate and water, or a mixture of hydrogen peroxide, concentrated sulfuric acid and water, and the etching time is 20s-120s. When the material for preparing the conductor thin film layer (300) is Ni, the etching solution is a mixture of nitric acid, sodium persulfate and water, and the etching time is 20s-100s. In plasma dry etching, the argon flow rate is greater than 20 sccm, the etching process pressure is 0.01 Pa to 1 Pa, and the etching time is 10 s to 1000 s.

14. The circuit fabrication method according to claim 13, characterized in that, The circuit fabrication method also satisfies at least one of the following conditions: (1) The mass-to-volume ratio of sulfuric acid, sodium persulfate and water is 2 mL~3 mL: 1 g~5 g: 10 g~20 g; (2) The volume ratio of hydrogen peroxide, concentrated sulfuric acid and water is 1 mL~2 mL: 2 mL~4 mL: 20 mL~40 mL; (3) The mass-volume ratio of nitric acid, sodium persulfate and water is 2mL~3mL:1g~5g:10g~20g.

15. The circuit fabrication method according to any one of claims 1 to 5, 8, 11, and 14, characterized in that, When a third electroplating process is performed on the exposed portion of the adhesive metal film layer (200) and the first protective film layer (600) after the first etching process to form a fully covered second protective film layer (700), the specific steps include the following: After the exposed parts of the adhered metal film layer (200) and the first protective film layer (600) are degreased and cleaned in sequence using a degreasing agent, they are then subjected to acid immersion activation treatment and cleaning treatment. The exposed portion of the adhesive metal film layer (200) and the first protective film layer (600) are subjected to a third electroplating treatment to form a fully covered second protective film layer (700).

16. The circuit fabrication method according to claim 15, characterized in that, When performing the third electroplating process, at least one of the following conditions must be met: (1) During the degreasing process, the degreasing time shall be at least 40 seconds; (2) During the acid leaching activation treatment, hydrochloric acid with a mass concentration of 5% to 15% is used for acid leaching activation for at least 40 seconds; (3) During the cleaning process, high-purity water is used for cleaning for at least 60 seconds.

17. The circuit fabrication method according to any one of claims 1 to 5, 8, 11, 14, and 16, characterized in that, During the third electroplating process, the substrate (100) is placed in a gold plating solution, a silver plating solution, or a tin plating solution, at a current density of 0.5 A / dm³. 2 ~40A / dm 2 Selective electroplating is performed for 30s to 200s. The thickness of the second protective film layer (700) is 0.5μm to 1μm. After electroplating, the film is rinsed with high-purity water for at least 60s and then dried.

18. The circuit fabrication method according to any one of claims 1 to 5, 8, 11, 14, and 16, characterized in that, When roughening the portion of the second protective film layer (700) attached to the adhered metal film layer (200), the specific steps include the following: A portion of the second protective film layer (700) is subjected to wet sandblasting to remove the portion of the second protective film layer (700) attached to the adhered metal film layer (200). The particle size of the diamond abrasive is 100 mesh to 400 mesh, the sandblasting pressure is 0.1 MPa to 0.3 MPa, the sandblasting time is 20 s to 100 s, the water washing flow rate is 2 L / min to 10 L / min, and the water washing time is 20 s to 100 s. After wet sandblasting, the product is dried at a temperature of 50℃ to 80℃ for 20 to 100 seconds.

19. The circuit fabrication method according to any one of claims 1 to 5, 8, 11, 14, and 16, characterized in that, The second etching process for the adhered metal film layer (200) specifically includes the following steps: The adhered metal film layer (200) is subjected to a second etching process using wet etching or plasma dry etching; In the wet etching process, HF acid etching is used, with an etching time of 20s~100s and a temperature of 25℃~30℃. During plasma dry etching, the etching pressure is 0.1 Pa to 1 Pa, the etching gas is argon, the argon flow rate is greater than 20 sccm, and the etching time is 10 s to 1000 s.

20. A conductive thin film, characterized in that, It is prepared by the preparation method described in any one of claims 1 to 19.

21. A semiconductor device, characterized in that, Includes the conductive thin film as described in claim 20.

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