Etching equipment electrode, preparation method and etching equipment

Abstract

The present application relates to an etching equipment electrode, a preparation method and an etching equipment in the field of etching technology. The etching equipment electrode comprises: an electrode plate; a plurality of microstructures, which are evenly arranged on the surface of at least one side of the electrode plate. The etching equipment electrode of the present application can absorb byproducts of the etching process to form a protective layer, thereby avoiding direct contact between the electrode plate and plasma, reducing the consumption rate of the electrode plate, improving the stability and service life of the electrode plate, and reducing the impact on wafer production.

Description

Technical Field

[0001] The present application relates to the field of etching technology, and in particular to an etching equipment electrode, a preparation method and an etching equipment. Background Art

[0002] The electrodes of etching equipment are in direct contact with plasma during production. The material, single crystal silicon, will be consumed in contact with plasma, causing the thickness to become thinner and key dimensions to deform, thereby reducing its service life. The existing electrode surface is a smooth and uniform wire-cut morphology, which will be quickly consumed in the process of contacting plasma, reducing its service life and even causing production interruptions and wafer scrapping. Summary of the invention

[0003] The main purpose of the present invention is to provide an etching device electrode, a preparation method and an etching device, aiming to solve at least one of the above-mentioned technical problems.

[0004] To achieve the above-mentioned purpose, the present invention proposes an etching equipment electrode, comprising: an electrode plate; and a plurality of microstructures uniformly arranged on at least one side of the surface of the electrode plate.

[0005] By using the etching equipment electrode in the technical solution, the electrode plate is installed at the position of the electrode on the reaction chamber, so that the side of the electrode plate with the microstructure faces the reaction chamber, so that the by-products of the etching process can be adsorbed near the microstructure to form a protective layer, thereby avoiding direct contact between the electrode plate and the plasma, thereby reducing the consumption rate of the electrode plate, improving the stability and service life of the electrode plate, and reducing the impact on wafer production.

[0006] In some embodiments of the present invention, the height of the microstructure is 5-15 μm.

[0007] In some embodiments of the present invention, the average density of the microstructures on the electrode plate is 4×10 5 -5×10 5 Pieces / cm 2 .

[0008] In some embodiments of the present invention, the microstructure is a pyramid structure, an inverted pyramid structure or a honeycomb structure.

[0009] In some embodiments of the present invention, the electrode plate and the microstructure are both made of single crystal silicon material.

[0010] To achieve the above-mentioned purpose, the present invention further proposes a method for preparing an etching device electrode, comprising: cleaning the surface of the electrode plate; and etching a uniformly distributed microstructure on the cleaned surface of the electrode plate.

[0011] In some embodiments of the present invention, the cleaning of the electrode plate surface includes: adding hydrogen peroxide to an alkaline solution to obtain a cleaning solution; heating the cleaning solution, placing the electrode plate in the cleaning solution, and removing dirt on the electrode plate surface.

[0012] In some embodiments of the present invention, etching the electrode plate surface to produce uniformly distributed microstructures includes: adding isopropyl alcohol to an alkaline solution to obtain a corrosion solution; heating the corrosion solution, placing the electrode plate in the corrosion solution, and producing uniform microstructures on the electrode plate surface.

[0013] In some embodiments of the present invention, after the uniformly distributed microstructures are etched on the surface of the electrode plate, the electrode plate is placed in a hydrofluoric acid solution for 1 to 5 minutes.

[0014] To achieve the above object, the present invention also proposes an etching device, including the above etching device electrode. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present application. Also, the same reference symbols are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:

[0016] Figure 1 It is a schematic diagram of the structure of the etching equipment;

[0017] Figure 2 This is an electron microscope image of the upper electrode of the current etching equipment;

[0018] Figure 3 This is the surface topography of the upper electrode of the current etching equipment;

[0019] Figure 4 It is a schematic diagram of the overall structure of the electrode of the etching device of the present invention;

[0020] Figure 5 is an electron microscope image of the electrode prepared in Example 1 of the present invention;

[0021] Figure 6 This is a surface morphology image of the electrode prepared in Example 1 of the present invention.

[0022] The reference numerals in the accompanying drawings represent the following: 100, reaction chamber; 101, radio frequency power supply; 102, upper electrode; 103, lower electrode; 1, electrode plate; 2, microstructure. DETAILED DESCRIPTION

[0023] It should be clear that the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0024] When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. Instead, they are only examples of devices and methods consistent with some aspects of the present application as detailed in the attached claims.

[0025] In the description of the present application, it should be understood that the terms "first", "second", etc. are used for descriptive purposes only and should not be understood as indicating or implying relative importance. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to the specific circumstances. In addition, in the description of the present application, unless otherwise specified, "multiple" refers to two or more. "And / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. The character " / " generally indicates that the objects associated before and after are in an "or" relationship.

[0026] The etching equipment electrode provided in the embodiment of the present application is used for plasma etching equipment. The plasma etching equipment can use plasma to etch semiconductor materials. It is widely used in the fields of microelectronic chip manufacturing, solar cells, biochips, etc., and is one of the indispensable equipment in the semiconductor manufacturing process.

[0027] Plasma etching equipment excites gas into plasma through a high-frequency electric field, and uses the chemical and physical reactions of plasma to perform high-precision processing on the surface of semiconductor materials. Plasma can be carried out at low temperatures, so compared with traditional mechanical cutting and grinding methods, plasma etching has higher accuracy, better controllability and higher efficiency.

[0028] like Figure 1 As shown, the plasma etching equipment includes a reaction chamber 100, a gas transmission device and a radio frequency power supply 101. An upper electrode 102 is provided on the top of the reaction chamber 100, and a lower electrode 103 is provided in the middle and lower part of the reaction chamber 100. The lower electrode 103 is directly opposite to the upper electrode 102, and a platform for placing a wafer is provided on the top of the lower electrode 103. The gas transmission device introduces the required gas into the reaction chamber 100 (indicated by the black solid arrow), and after being excited, plasma is formed and reacts with the semiconductor surface.

[0029] However, during the etching process, the electrodes, especially the upper electrode 102, such as Figure 2 and Figure 3 As shown, the surface of the upper electrode 102 is a smooth and uniform wire-cut morphology. The upper electrode 102 directly contacts the plasma, so that the upper electrode 102 is quickly consumed by the plasma, and the service life is reduced. Even due to untimely maintenance of the electrode, problems such as production interruption and wafer scrapping occur.

[0030] Therefore, the present application provides an etching equipment electrode, a preparation method and an etching equipment to improve the stability and service life of the etching equipment electrode and reduce the impact on wafer production. The etching equipment electrode, preparation method and etching equipment provided in the present application are described below in conjunction with the accompanying drawings.

[0031] The present application embodiment discloses an etching device electrode. Figure 4 As shown, the etching device electrode includes an electrode plate 1 and a plurality of microstructures 2 , and the plurality of microstructures 2 are at least evenly arranged on the surface of one side of the electrode plate 1 .

[0032] By using the etching equipment electrode in the present technical solution, the electrode plate 1 is installed at the position of the electrode 102 on the reaction chamber 100, so that the side of the electrode plate 1 with the microstructure 2 faces the reaction chamber 100, so that the by-products of the etching process (indicated by the dotted circle) can be adsorbed near the microstructure 2 to form a protective layer, thereby avoiding direct contact between the electrode plate 1 and the plasma, thereby reducing the consumption rate of the electrode plate 1, improving the stability and service life of the electrode plate 1, and reducing the impact on wafer production.

[0033] Specifically, the electrode plate 1 in this embodiment is made of single crystal silicon material; further, the microstructure 2 is made of the same material as the electrode plate 1 . It can be understood that the microstructure 2 and the electrode plate 1 are an integrated structure.

[0034] It should be noted that the electrode plate 1 can not only be used as the upper electrode 102, but can also be used as the lower electrode 103 as needed; further, the microstructure 2 is arranged on the surface of the electrode plate 1 facing the reaction chamber 100, and according to the degree of impact of the plasma on the electrode plate 1, the microstructure 2 can also be uniformly arranged on the back side of the electrode plate 1; the microstructure 2 is preferably arranged on one side of the electrode plate 1, and the side is facing the other electrode of the reaction chamber 100.

[0035] In some embodiments of the present invention, Figure 4As shown, the microstructure 2 is a pyramid structure. Adjacent pyramid structures are arranged at intervals, and grooves and gaps are formed on the surface of the electrode plate 1 with dense pyramid structures. Compared with the current smooth surface of the electrode plate 1, the pyramid structure provides more space for the accumulation of byproducts of the etching process, making the accumulation rate of byproducts slower, which not only reduces the consumption rate of the electrode plate 1, but also has a relatively delayed effect on the abnormal discharge caused by the unevenness of the electrode plate 1 due to corrosion. In the same production cycle, the abnormal discharge problem of the electrode plate 1 is improved, making the operation of the etching equipment more stable.

[0036] In other embodiments, the microstructure 2 may also adopt an inverted pyramid structure or a honeycomb structure, which is not limited here.

[0037] In some embodiments of the present invention, the height of the microstructure 2 is 5-15 μm, for example, the height of the microstructure 2 is 7 μm, 9 μm, 11 μm or 13 μm, etc.; further, the average density of the microstructure 2 on the electrode plate 1 is 4*10 5 -5*10 5 Pieces / cm 2 .

[0038] The present invention also provides a preparation method for preparing the above-mentioned etching device electrode, and the preparation method comprises the following steps:

[0039] 1) Cleaning of the electrode plate: Add hydrogen peroxide to an alkaline solution to obtain a cleaning solution; then heat the cleaning solution, place the electrode plate 1 in the cleaning solution, and remove dirt on the surface of the electrode plate 1 caused by processing, such as residual cutting fluid, surface broken layer, etc.

[0040] It should be noted that the alkali in the alkaline solution is at least one of sodium hydroxide and potassium hydroxide; further, the concentration of the alkali in the alkaline solution is 3-15%.

[0041] 2) Electrode plate surface corrosion: isopropyl alcohol is added to an alkaline solution to obtain a corrosion solution; the corrosion solution is then heated, and the electrode plate 1 is placed in the corrosion solution, thereby generating a uniform microstructure 2 on the surface of the electrode plate 1 .

[0042] It is understandable that the electrode plate 1 only needs to have one side processed with a microstructure in contact with the corrosive solution, while the other side can be protected.

[0043] It should be noted that the alkali in the alkaline solution is at least one of sodium hydroxide and potassium hydroxide; further, the concentration of the alkali in the alkaline solution is 3-15%.

[0044] 3) Removing metal ions from the electrode plate: After the uniformly distributed microstructures 2 are corroded on the surface of the electrode plate 1 , the electrode plate 1 is placed in a hydrofluoric acid solution for 1 to 5 minutes to reduce the metal ion concentration on the surface of the electrode plate 1 .

[0045] The method for preparing the electrode of the etching device in the present application will be further described below in conjunction with specific embodiments.

[0046] Example 1

[0047] Pyramid structure

[0048] 1) First, add 3-15% hydrogen peroxide to a 3-15% sodium hydroxide solution, heat it to 50-90°C, and place the single crystal silicon electrode in the solution for 20-35 minutes to remove dirt on the surface of the silicon electrode caused by processing, such as cutting fluid residue and broken layer on the silicon surface.

[0049] 2) Then, 5% to 10% isopropyl alcohol is added to a 3% to 15% sodium hydroxide solution, heated to 50 to 80° C., and the single crystal silicon electrode plate 1 is placed in the solution for 30 to 35 minutes to generate a uniform pyramid structure on the surface of the silicon electrode.

[0050] 3) Then, the single crystal silicon electrode is placed in a hydrofluoric acid solution with a concentration of 1 to 5% for 1 to 5 minutes to remove the metal ions on the surface of the silicon electrode and reduce the concentration of metal ions on the surface of the silicon electrode.

[0051] The preparation method is used to prepare a single crystal silicon electrode with a pyramid structure, and the overall processing process is simple, such as Figure 5 and Figure 6 As shown, the pyramid-shaped structure can be evenly distributed on the surface of the single crystal silicon electrode, the surface roughness of the electrode can be increased, and the by-products of the etching process can be adsorbed near the pyramid-shaped structure to form a protective layer, thereby avoiding direct contact between the single crystal silicon and the plasma, thereby reducing the consumption rate.

[0052] The present invention also provides an etching device, which includes the etching device electrode mentioned above.

[0053] The above is only a preferred specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims

1. An etching equipment electrode, characterized in that: include: Electrode plates; A plurality of microstructures are evenly arranged on at least one side of the electrode plate, the height of the microstructures is 5-15 μm, and the average density of the microstructures on the electrode plate is 4×10 5 -5×10 5 Pieces / cm 2 ; The electrode plate and the microstructure are both made of single crystal silicon; The preparation of the etching device electrode comprises the following steps: Clean the surface of the electrode plate; A uniformly distributed microstructure is etched on the clean surface of the electrode plate, wherein one side of the electrode plate that needs to be processed with the microstructure is in contact with the corrosive solution, and the other side is protected; The process of etching the surface of the electrode plate to form a uniformly distributed microstructure comprises the following steps: In a sodium hydroxide solution with a concentration of 3% to 15%, 5% to 10% isopropanol is added to obtain a corrosion solution; The etching solution is heated, and the electrode plate is placed in the etching solution for 30 to 35 minutes to generate a uniform microstructure on the surface of the electrode plate.

2. The etching device electrode according to claim 1, characterized in that: The microstructure is a pyramid structure, an inverted pyramid structure or a honeycomb structure.

3. A method for preparing an etching device electrode, used for preparing the etching device electrode according to claim 1 or 2, characterized in that: The preparation method comprises: Clean the surface of the electrode plate; A uniformly distributed microstructure is etched on the clean surface of the electrode plate, wherein one side of the electrode plate that needs to be processed with the microstructure is in contact with the corrosive solution, and the other side is protected; The process of etching the surface of the electrode plate to form a uniformly distributed microstructure comprises the following steps: In a sodium hydroxide solution with a concentration of 3% to 15%, 5% to 10% isopropanol is added to obtain a corrosion solution; The etching solution is heated, and the electrode plate is placed in the etching solution for 30 to 35 minutes to generate a uniform microstructure on the surface of the electrode plate.

4. The preparation method according to claim 3, characterized in that: The cleaning of the surface of the electrode plate comprises: In an alkaline solution, hydrogen peroxide is added to obtain a cleaning solution; The cleaning solution is heated, and the electrode plate is placed in the cleaning solution to remove dirt on the surface of the electrode plate.

5. The preparation method according to claim 3 or 4, characterized in that: After the surface of the electrode plate is etched to form uniformly distributed microstructures, the electrode plate is placed in a hydrofluoric acid solution for 1 to 5 minutes.

6. An etching device, characterized in that: Comprising the etching device electrode as described in claim 1 or 2.

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