A chemical vapor deposition method for preparing a silicon carbide composite coating on monocrystalline or polycrystalline silicon

Abstract

The application discloses a chemical vapor deposition method for preparing a silicon carbide composite coating on monocrystalline silicon or polycrystalline silicon, and relates to the technical field of coating preparation. The chemical vapor deposition method for preparing the silicon carbide composite coating on the monocrystalline silicon or the polycrystalline silicon is realized through a silicon substrate ultrasonic cleaning device. The silicon substrate ultrasonic cleaning device comprises a shell. A first driving mechanism is arranged at the bottom of the inner side of the shell. A placing and lifting mechanism is arranged at the top end of the first driving mechanism. A cleaning centrifugal mechanism is arranged at the top of the inner side of the shell. A trigger type drainage mechanism is arranged at the left side of the cleaning centrifugal mechanism. A second driving mechanism is arranged at the top of the shell and the top of the inner side of the shell. The application has high automation degree, can effectively reduce the feeding and discharging difficulty of the silicon substrate, can reduce the residual amount of the cleaning agent, can reduce the cleaning difficulty, and can avoid the dilution of the subsequent cleaning agent caused by the residual cleaning agent, so that the subsequent cleaning effect is not affected.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of coating preparation, in particular to a chemical vapor deposition method for preparing a silicon carbide composite coating on a single crystal silicon or polycrystalline silicon. BACKGROUND

[0002] In the chip etching process, the main function of the fluorine-containing gas is to obtain fluorine ions by ionization, and the fluorine ions react with silicon atoms in the silicon carbide substrate to generate SiF4 gas and achieve etching of the silicon atoms. At present, since the object table of the silicon wafer is also mainly made of silicon material, in order to improve the service life of the object table, the silicon material needs to be effectively protected. The silicon carbide material has a large band gap, a high breakdown field strength, high inertness, high thermal conductivity, and fast carrier saturation speed, and is an ideal coating material for the above-mentioned protection field.

[0003] The invention patent with the authorized announcement number CN 112647055 B discloses a chemical vapor deposition method for preparing a silicon carbide composite coating on a single crystal silicon or polycrystalline silicon. A metal organic compound chemical vapor deposition system is adopted, liquid raw materials hexamethyldisilane or hexamethyldisiloxane, H2 and Ar gas system are selected, before depositing the coating, the single crystal silicon or polycrystalline silicon substrate is pretreated to form a porous silicon layer, and then the coating is deposited on the porous silicon layer. The composite coating is composed of a porous silicon layer, a buffer layer, a SiOC layer and a pure SiC layer in sequence from the Si substrate.

[0004] The silicon carbide composite coating deposited by the method has the characteristics of compact structure, no obvious cracks and good bonding with the substrate. The composite coating designed by the invention skillfully coordinates the stress matching problem of the SiC coating and the Si substrate. The thickness of the composite coating prepared by the method can exceed 1.5 mm.

[0005] However, the above-mentioned method has some disadvantages after being actually applied by the person skilled in the art. The more obvious one is that the silicon substrate needs to be ultrasonically cleaned several times before being deposited and processed, whether it is a single crystal silicon substrate or a polycrystalline silicon substrate. When the silicon substrate is cleaned by using a traditional ultrasonic cleaning device, the silicon substrate is not convenient to load and unload due to the blockage of the cleaning device shell, which increases the difficulty of loading and unloading. After cleaning, the surface of the silicon substrate will be left with washing liquid, which not only increases the transfer difficulty of the silicon substrate, but also dilutes the subsequent cleaning agent, thereby affecting the subsequent cleaning effect.

[0006] Therefore, it is necessary to invent a chemical vapor deposition method for preparing a silicon carbide composite coating on a single crystal silicon or polycrystalline silicon to solve the above-mentioned problems. SUMMARY

[0007] The present application aims to provide a chemical vapor deposition method for preparing a silicon carbide composite coating on monocrystalline silicon or polycrystalline silicon to solve the problems in the background art.

[0008] To achieve the above object, the present application provides the following technical scheme: a chemical vapor deposition method for preparing a silicon carbide composite coating on monocrystalline silicon or polycrystalline silicon, which is realized by a silicon substrate ultrasonic cleaning device. The silicon substrate ultrasonic cleaning device comprises a shell, a first driving mechanism arranged at the bottom of the inner side of the shell, a placement lifting mechanism arranged at the top end of the first driving mechanism, a cleaning centrifugal mechanism arranged at the top of the inner side of the shell, a trigger type drainage mechanism arranged at the left side of the cleaning centrifugal mechanism, and a second driving mechanism arranged at the top of the shell and the inner side of the shell.

[0009] The first driving mechanism comprises a reciprocating screw, a driving motor, a lower magnet, an inner sleeve, a first spring, an outer sleeve, and an L-shaped trigger arm.

[0010] The reciprocating screw penetrates through the shell and is rotationally connected to the shell through a bearing. The driving motor is fixedly arranged at the bottom of the reciprocating screw and is in transmission connection with the reciprocating screw. The lower magnet is fixedly arranged at the top end of the reciprocating screw. The inner sleeve, the first spring, and the outer sleeve are sequentially and telescopically arranged on the outer side of the reciprocating screw from top to bottom. The inner sleeve is slidingly and nestingly arranged in the inner part of the outer sleeve and is in sliding connection with the reciprocating screw. The first spring is located in the inner part of the outer sleeve and is fixedly connected between the inner sleeve and the outer sleeve. The outer sleeve is in threaded connection with the reciprocating screw. The L-shaped trigger arm is fixedly arranged at the top left side of the outer sleeve.

[0011] The placement lifting mechanism comprises a lifting seat, a placement plate, an extension rod, an upper magnet, a second spring, a limiting frame, a longitudinal sliding groove, a longitudinal sliding block, and a limiting column.

[0012] The lifting seat is fixedly telescopically arranged at the top of the outer side of the inner sleeve. The placement plate is rotationally and nestingly arranged at the center of the top of the lifting seat through a bearing. The extension rod is fixedly arranged at the center of the bottom of the placement plate. The upper magnet is fixedly arranged at the bottom end of the extension rod. The second spring is telescopically arranged on the outer side of the extension rod and is fixedly connected between the placement plate and the upper magnet. The limiting frame is slidingly and telescopically arranged on the outer side of the lifting seat in the vertical direction. The longitudinal sliding groove is formed in the inner side of the limiting frame. The longitudinal sliding block is slidingly arranged in the inner side of the longitudinal sliding groove and is fixedly connected with the lifting seat. The limiting column is conformingly arranged at the bottom of the limiting frame and is fixedly connected with the inner wall of the shell.

[0013] Preferably, the cleaning centrifugal mechanism comprises a cleaning cover, a cleaning agent input pipe, a partition plate, a top plate, an annular mesh cylinder, a lifting column, a first end plate, a rotating sleeve, and a driven gear.

[0014] Preferably, the cleaning cover is fixedly arranged at the top of the inner side of the shell, the ultrasonic generator is fixedly arranged inside the cleaning cover, the cleaning agent input pipe is fixedly and penetratingly arranged at the right side of the cleaning cover, the partition plate is fixedly arranged at the middle of the inner side of the cleaning cover, the partition plate divides the inner side of the cleaning cover into an upper chamber and a lower chamber, the top plate is slidingly arranged inside the partition plate, the annular mesh cylinder is fixedly arranged at the bottom of the top plate, the lifting column is fixedly arranged at the top of the top plate and slidingly penetrates the inner wall of the cleaning cover in the vertical direction and extends to the top of the cleaning cover, the first end plate is fixedly arranged at the top end of the lifting column, the rotating sleeve is slidingly and nestingly arranged outside the lifting column in the vertical direction and is rotatably and nestingly arranged at the top of the shell through the bearing, and the driven gear is fixedly and sleevingly arranged outside the rotating sleeve.

[0015] Preferably, the trigger type drainage mechanism comprises a first output pipe, a sealing box, a second output pipe, a plugging block, a trigger groove and a third spring.

[0016] Preferably, the first output pipe is fixedly and penetratingly arranged at the bottom of the left side of the cleaning cover, the sealing box is fixedly and sleevingly arranged at the left end outside the first output pipe, the second output pipe is fixedly and penetratingly arranged at the left side of the sealing box, the plugging block is slidingly arranged inside the sealing box in the horizontal direction, the trigger groove is penetratingly arranged at the bottom of the plugging block in the vertical direction, and the third spring is fixedly connected between the plugging block and the inner wall of the sealing box.

[0017] Preferably, the second driving mechanism comprises a threaded sleeve, a driving gear, a one-way screw, a second end plate and a fourth spring.

[0018] Preferably, the threaded sleeve is rotatably and nestingly arranged at the top of the shell through the bearing, the driving gear is fixedly and sleevingly arranged outside the threaded sleeve and is engaged with the driven gear, the one-way screw is located inside the threaded sleeve and is threadedly connected with the threaded sleeve, the second end plate is fixedly arranged at the bottom end of the one-way screw, and the fourth spring is sleevingly arranged outside the one-way screw and is fixedly connected between the inner wall of the shell and the second end plate.

[0019] Preferably, the method specifically comprises the following steps:

[0020] S1, place a plurality of silicon substrates on the top of the placement plate, continuously inject cleaning agent into the upper chamber through the cleaning agent input pipe, start the driving motor, the driving motor drives the reciprocating screw to continuously rotate, the reciprocating screw drives the outer sleeve to continuously rise when rotating, the outer sleeve drives the L-shaped trigger arm to rise while driving the inner sleeve to synchronously rise through the first spring, the inner sleeve drives the plurality of silicon substrates to continuously move to the cleaning station through the lifting seat and the placement plate when rising, and the lifting seat drives the limiting frame to be separated from the top of the limiting column through the longitudinal sliding block.

[0021] S2, when the outer sleeve reaches the first threshold, the top of the placement plate contacts the bottom of the ring-shaped mesh cylinder, and the placement plate drives the top plate to move upwards inside the partition plate, and the partition plate drives the lifting column to move upwards inside the rotating sleeve synchronously;

[0022] S3, when the outer sleeve reaches the second threshold, the top of the placement plate contacts the bottom of the cleaning cover, and the placement plate cannot continue to move upwards due to the blockage of the cleaning cover. At the same time, the ring-shaped mesh cylinder is pushed by the placement plate to communicate the upper chamber and the lower chamber, and the cleaning agent in the upper chamber continuously enters the lower chamber through the ring-shaped mesh cylinder, and then the ultrasonic cleaning operation of the silicon substrate is started. Due to the limitation of the placement plate, the inner sleeve also cannot continue to rise, and the first spring is continuously compressed. At the same time, the L-shaped trigger arm continues to move upwards driven by the outer sleeve;

[0023] S4, when the outer sleeve reaches the third threshold, the top end of the L-shaped trigger arm enters the inside of the sealing box and contacts the inner wall of the trigger groove. Subsequently, as the L-shaped trigger arm continues to rise, the blocking block continuously moves to the left, thereby contacting and blocking the outlet of the first output pipe. At this time, the cleaning agent in the lower chamber enters the inside of the sealing box through the first output pipe, and then is discharged through the second output pipe;

[0024] S5, when the outer sleeve reaches the fourth threshold, the top end of the L-shaped trigger arm contacts the bottom of the second end plate. Subsequently, as the L-shaped trigger arm continues to rise, the second end plate compresses the fourth spring while driving the one-way screw to continuously move upwards. In the process of moving upwards of the one-way screw, the main gear is continuously rotated through the threaded sleeve, and the lifting column is continuously rotated through the driven gear and the rotating sleeve driven by the main gear. In the process of rotating of the lifting column, the placement plate is continuously rotated through the top plate and the ring-shaped mesh cylinder. In the process of rotating of the placement plate, the cleaned silicon substrate on the top of the placement plate is close to the inner wall under the action of centrifugal force, and the residual cleaning agent penetrates through the ring-shaped mesh cylinder and is output through the first output pipe under the action of centrifugal force;

[0025] S6, when the outer sleeve reaches the fifth threshold, the outer sleeve rises to the top end of the reciprocating screw outside the reciprocating screw. Subsequently, as the reciprocating screw continues to rotate, the outer sleeve moves downwards to reset. When the outer sleeve moves downwards to the sixth threshold, the outer sleeve drives the placement plate to reach the initial feeding station through the lifting seat. Subsequently, as the reciprocating screw continues to rotate, the outer sleeve continues to move downwards. At this time, due to the blockage of the limiting column, the limiting frame relatively rises outside the lifting seat to form a fence;

[0026] S7, when the outer sleeve moves downwards to the seventh threshold, the lower magnet and the upper magnet are attracted. At this time, the placement plate is rotated synchronously through the upper magnet and the telescopic rod when the reciprocating screw rotates. In the process of rotating of the placement plate, the cleaned silicon substrate on the top of the placement plate moves out to the edge of the top of the lifting seat, and in this process, the limiting frame blocks it.

[0027] S8, when the outer sleeve moves down to the eighth threshold value, the outer sleeve moves to the lowest end of the outer side of the reciprocating screw, and then the outer sleeve is reset upwardly with the continuous rotation of the reciprocating screw, and when the outer sleeve drives the lifting seat to reach the initial position again, the driving motor is stopped, and then the silicon substrate after cleaning on the top of the lifting seat is taken off, and the silicon substrate to be cleaned is placed on the top of the placement plate again.

[0028] S9, a porous silicon layer is prepared on the silicon substrate after cleaning and drying, and then a SiOC buffer layer, a SiOC layer and a pure SiC coating layer are sequentially deposited.

[0029] The technical effects and advantages of the present application are as follows:

[0030] The present application is provided with a first driving mechanism, a placement lifting mechanism, a cleaning centrifugal mechanism, a trigger type drainage mechanism and a second driving mechanism, so as to complete unobstructed feeding by using the placement lifting mechanism, then the first driving mechanism is used to lift the placement lifting mechanism, so that the placement lifting mechanism carrying the silicon substrate to be cleaned continues to move upwardly until it reaches the cleaning station, in the process, the placement lifting mechanism triggers the cleaning centrifugal mechanism, forming a cleaning chamber and completing the rapid addition of cleaning agent, then the first driving mechanism drives the trigger type drainage mechanism to the right and the second driving mechanism, the trigger type drainage mechanism is automatically discharged after being driven, and the second driving mechanism is driven to drive the cleaning centrifugal mechanism, so that the cleaning centrifugal mechanism cooperates with the placement lifting mechanism to complete the output of residual cleaning agent, then during the reset process of the first driving mechanism, the first driving mechanism triggers the placement lifting mechanism, so as to complete the rapid transfer of the silicon substrate after cleaning. Compared with the same type of device and method in the prior art, the present application has high automation and can effectively reduce the difficulty of silicon substrate feeding and unloading, and can also reduce the residual amount of cleaning agent, reduce the cleaning difficulty, and avoid the dilution of the subsequent cleaning agent caused by the residual cleaning agent, which affects the subsequent cleaning effect. BRIEF DESCRIPTION OF DRAWINGS

[0031] Figure 1 It is a schematic diagram of the overall front cross-sectional structure of the present application.

[0032] Figure 2 It is a schematic diagram of the front cross-sectional structure of the first driving mechanism of the present application.

[0033] Figure 3 It is a schematic diagram of the front cross-sectional structure of the placement lifting mechanism of the present application.

[0034] Figure 4 It is a schematic diagram of the front cross-sectional structure of the cleaning centrifugal mechanism and the trigger type drainage mechanism of the present application.

[0035] Figure 5 It is the second drive mechanism front view schematic diagram of sectional structure of the application.

[0036] In the figure: 1, the shell; 2, the first drive mechanism; 21, reciprocating screw; 22, drive motor; 23, lower magnet; 24, inner sleeve; 25, first spring; 26, outer sleeve; 27, L-shaped trigger arm; 3, placement lifting mechanism; 31, lifting seat; 32, placement plate; 33, telescopic rod; 34, upper magnet; 35, second spring; 36, limit frame; 37, longitudinal sliding groove; 38, longitudinal sliding block; 39, limit column; 4, cleaning centrifugal mechanism; 41, cleaning cover; 42, cleaning agent input pipe; 43, partition; 44, top plate; 45, annular mesh cylinder; 46, lifting column; 47, first end plate; 48, rotating sleeve; 49, driven gear; 5, trigger type drainage mechanism; 51, first output pipe; 52, sealing box; 53, second output pipe; 54, plugging block; 55, trigger groove; 56, third spring; 6, second drive mechanism; 61, threaded sleeve; 62, driving gear; 63, one-way screw; 64, second end plate; 65, fourth spring. DETAILED DESCRIPTION

[0037] The technical solutions in the embodiments of the application will be apparently and completely described below with reference to the drawings in the embodiments of the application. Obviously, the described embodiments are only part of the embodiments of the application, rather than all the embodiments. Based on the embodiments in the application, all other embodiments obtained by a person of ordinary skill in the art without creative work fall within the protection scope of the application.

[0038] Embodiment 1

[0039] The application provides a chemical vapor deposition method for preparing a silicon carbide composite coating on monocrystalline silicon or polycrystalline silicon, as shown in the figure. Figures 1-5 The chemical vapor deposition method for preparing a silicon carbide composite coating on monocrystalline silicon or polycrystalline silicon is realized through a silicon substrate ultrasonic cleaning device. The silicon substrate ultrasonic cleaning device comprises a shell 1. A first drive mechanism 2 is arranged at the bottom of the inner side of the shell 1. A placement lifting mechanism 3 is arranged at the top end of the first drive mechanism 2. A cleaning centrifugal mechanism 4 is arranged at the top of the inner side of the shell 1. A trigger type drainage mechanism 5 is arranged at the left side of the cleaning centrifugal mechanism 4. A second drive mechanism 6 is arranged at the top of the shell 1 and the top of the inner side of the shell 1. The second drive mechanism 6 is located at the left side of the cleaning centrifugal mechanism 4.

[0040] As shown in the figure, Figure 2As shown, the first drive mechanism 2 comprises a reciprocating screw 21, a drive motor 22, a lower magnet 23, an inner sleeve 24, a first spring 25, an outer sleeve 26 and an L-shaped trigger arm 27, wherein the reciprocating screw 21 penetrates through the shell 1 and is rotatably connected with the shell 1 through a bearing, the drive motor 22 is fixedly arranged at the bottom of the reciprocating screw 21 and is in transmission connection with the reciprocating screw 21, the lower magnet 23 is fixedly arranged at the top end of the reciprocating screw 21, the inner sleeve 24, the first spring 25 and the outer sleeve 26 are sequentially and telescopically arranged outside the reciprocating screw 21 from top to bottom, the inner sleeve 24 is slidingly nested inside the outer sleeve 26 and is in sliding connection with the reciprocating screw 21 in the vertical direction, the first spring 25 is located inside the outer sleeve 26 and is fixedly connected between the inner sleeve 24 and the outer sleeve 26, the outer sleeve 26 is in threaded connection with the reciprocating screw 21, and the L-shaped trigger arm 27 is fixedly arranged at the top left side of the outer sleeve 26.

[0041] As shown in the Figure 3 The placement lifting mechanism 3 comprises a lifting seat 31, a placement plate 32, a telescopic rod 33, an upper magnet 34, a second spring 35, a limiting frame 36, a longitudinal sliding groove 37, a longitudinal sliding block 38 and a limiting column 39, wherein the lifting seat 31 is fixedly telescopically arranged outside the top of the inner sleeve 24, the placement plate 32 is rotatably nested at the center of the top of the lifting seat 31 through a bearing, the telescopic rod 33 is fixedly arranged at the center of the bottom of the placement plate 32, the upper magnet 34 is fixedly arranged at the bottom end of the telescopic rod 33, the second spring 35 is telescopically arranged outside the telescopic rod 33 and is fixedly connected between the placement plate 32 and the upper magnet 34, the limiting frame 36 is slidingly telescopically arranged outside the lifting seat 31 in the vertical direction, the longitudinal sliding groove 37 is formed inside the limiting frame 36, the longitudinal sliding block 38 is slidingly arranged inside the longitudinal sliding groove 37 and is fixedly connected with the lifting seat 31, and the limiting column 39 is abuttingly arranged at the bottom of the limiting frame 36 and is fixedly connected with the inner wall of the shell 1.

[0042] By arranging the first drive mechanism 2 and the placement lifting mechanism 3, when the outer sleeve 26 reaches the initial feeding station and continues to move downward, the limiting frame 36 is relatively lifted outside the lifting seat 31 to form a fence due to the blockage of the limiting column 39. When the lower magnet 23 and the upper magnet 34 are attracted later, the reciprocating screw 21 rotates to drive the placement plate 32 to rotate synchronously through the upper magnet 34 and the telescopic rod 33. The centrifugal force generated during the rotation of the placement plate 32 drives the silicon substrate on the top of the placement plate 32 to move outward to the edge of the top of the lifting seat 31, so as to facilitate the subsequent unobstructed discharging. In this process, the limiting frame 36 blocks it.

[0043] As shown in the Figure 4As shown in the figure, the cleaning centrifugal mechanism 4 comprises a cleaning cover 41, a cleaning agent input pipe 42, a partition plate 43, a top plate 44, an annular mesh cylinder 45, a lifting column 46, a first end plate 47, a rotating sleeve 48 and a driven gear 49, wherein the cleaning cover 41 is fixedly arranged at the top of the inside of the shell 1, an ultrasonic generator is fixedly arranged inside the cleaning cover 41, the cleaning agent input pipe 42 is fixedly and penetratingly arranged at the right side of the cleaning cover 41, the partition plate 43 is fixedly arranged at the middle of the inside of the cleaning cover 41, the partition plate 43 divides the inside of the cleaning cover 41 into an upper chamber and a lower chamber, the top plate 44 is slidingly arranged inside the partition plate 43, the annular mesh cylinder 45 is fixedly arranged at the bottom of the top plate 44, the lifting column 46 is fixedly arranged at the top of the top plate 44 and slidingly penetrates the inner wall of the cleaning cover 41 in the vertical direction and extends to the top of the cleaning cover 41, the first end plate 47 is fixedly arranged at the top end of the lifting column 46, the rotating sleeve 48 is slidingly and nestingly arranged outside the lifting column 46 in the vertical direction and is rotatingly and nestingly arranged at the top of the shell 1 through a bearing, and the driven gear 49 is fixedly and nestingly arranged outside the rotating sleeve 48.

[0044] By means of the above structure, the cleaning agent is continuously injected into the upper chamber through the cleaning agent input pipe 42, and when the placement plate 32 drives the top plate 44 to move upwards inside the partition plate 43 through the annular mesh cylinder 45, the lifting column 46 is synchronously lifted upwards inside the rotating sleeve 48, and when the top of the placement plate 32 contacts the bottom of the cleaning cover 41, the placement plate 32 cannot continue to move upwards due to the blockage of the cleaning cover 41, and at the same time the annular mesh cylinder 45 is pushed by the placement plate 32 to communicate the upper chamber and the lower chamber, the cleaning agent in the upper chamber continuously enters the lower chamber through the annular mesh cylinder 45, and then the ultrasonic cleaning operation on the silicon substrate is started.

[0045] As shown in the figure, Figure 4 The trigger type drainage mechanism 5 comprises a first output pipe 51, a sealing box 52, a second output pipe 53, a plugging block 54, a trigger groove 55 and a third spring 56, wherein the first output pipe 51 is fixedly and penetratingly arranged at the bottom of the left side of the cleaning cover 41, the sealing box 52 is fixedly and nestingly arranged at the left end outside the first output pipe 51, the second output pipe 53 is fixedly and penetratingly arranged at the left side of the sealing box 52, the plugging block 54 is slidingly arranged inside the sealing box 52 in the horizontal direction, the trigger groove 55 is penetratingly arranged at the bottom of the plugging block 54 in the vertical direction, and the third spring 56 is fixedly connected between the plugging block 54 and the inner wall of the sealing box 52.

[0046] By setting the above structure, when the top end of the L-shaped trigger arm 27 enters the inside of the sealed box 52 and contacts the inner wall of the trigger groove 55, the sealing block 54 continuously moves left with the continuous rising of the L-shaped trigger arm 27, thereby contacting and blocking the outlet of the first output pipe 51. At this time, the cleaning agent in the lower chamber enters the inside of the sealed box 52 through the first output pipe 51, and then is discharged through the second output pipe 53.

[0047] As shown in Figure 5 The second driving mechanism 6 includes a threaded sleeve 61, a driving gear 62, a one-way screw rod 63, a second end plate 64, and a fourth spring 65. The threaded sleeve 61 is rotatably nested on the top of the shell 1 through a bearing. The driving gear 62 is fixedly sleeved on the outside of the threaded sleeve 61 and engages with the driven gear 49. The one-way screw rod 63 is located on the inside of the threaded sleeve 61 and is threadedly connected with the threaded sleeve 61. The second end plate 64 is fixedly arranged at the bottom end of the one-way screw rod 63. The fourth spring 65 is sleeved on the outside of the one-way screw rod 63 and is fixedly connected between the inner wall of the shell 1 and the second end plate 64.

[0048] By setting the above cleaning centrifugal mechanism 4 and the second driving mechanism 6, when the top end of the L-shaped trigger arm 27 contacts the bottom of the second end plate 64, the second end plate 64 continuously moves up while compressing the fourth spring 65 with the continuous rising of the L-shaped trigger arm 27. In the process of moving up of the one-way screw rod 63, the driving gear 62 is continuously rotated through the threaded sleeve 61. The driving gear 62 drives the lifting column 46 to continuously rotate through the driven gear 49 and the rotating sleeve 48. The lifting column 46 drives the placement plate 32 to continuously rotate through the top plate 44 and the annular mesh cylinder 45 when rotating. The placement plate 32 rotates to make the cleaned silicon substrate on the top thereof close to the inner wall thereof under the action of centrifugal force. At the same time, the residual cleaning agent passes through the annular mesh cylinder 45 and is output through the first output pipe 51 under the action of centrifugal force.

[0049] Embodiment 2

[0050] The method specifically includes the following steps:

[0051] S1, place a plurality of silicon substrates on the top of the placement plate 32, continuously inject cleaning agent into the inside of the upper chamber through the cleaning agent input pipe 42, start the driving motor 22, and drive the reciprocating screw rod 21 to continuously rotate. The reciprocating screw rod 21 drives the outer sleeve 26 to continuously rise while the outer sleeve 26 drives the L-shaped trigger arm 27 to rise and the inner sleeve 24 to synchronously rise through the first spring 25. The inner sleeve 24 drives the plurality of silicon substrates to continuously move to the cleaning station through the lifting seat 31 and the placement plate 32 when rising. At the same time, the lifting seat 31 drives the limiting frame 36 to be separated from the top of the limiting column 39 through the longitudinal sliding block 38.

[0052] S2, when the rising distance of the outer sleeve 26 reaches the first threshold value, the top of the placing plate 32 is in contact with the bottom of the annular mesh cylinder 45, and subsequently, with the continuous rising of the placing plate 32, the placing plate 32 drives the top plate 44 to move upwards on the inner side of the partition plate 43 through the annular mesh cylinder 45, and the partition plate 43 drives the lifting column 46 to move upwards synchronously on the inner side of the rotating sleeve 48;

[0053] S3, when the rising distance of the outer sleeve 26 reaches the second threshold value, the top of the placing plate 32 is in contact with the bottom of the cleaning cover 41, and at this time, due to the blockage of the cleaning cover 41, the placing plate 32 cannot continue to move upwards, and at the same time, the annular mesh cylinder 45 is pushed by the placing plate 32 to communicate the upper chamber and the lower chamber, and the cleaning agent in the upper chamber continuously enters the lower chamber through the annular mesh cylinder 45, and then the ultrasonic cleaning operation on the silicon substrate is started, and due to the limitation of the placing plate 32, the inner sleeve 24 also cannot continue to rise, and subsequently, with the continuous rising of the outer sleeve 26, the first spring 25 is continuously compressed, and the outer sleeve 26 drives the L-shaped trigger arm 27 to continue to move upwards;

[0054] S4, when the rising distance of the outer sleeve 26 reaches the third threshold value, the top end of the L-shaped trigger arm 27 enters the inner side of the sealing box 52 and is in contact with the inner wall of the trigger groove 55, and subsequently, with the continuous rising of the L-shaped trigger arm 27, the blocking block 54 continuously moves to the left, thereby contacting and blocking the outlet of the first output pipe 51, at this time, the cleaning agent in the lower chamber enters the inner side of the sealing box 52 through the first output pipe 51, and then is discharged through the second output pipe 53;

[0055] S5, when the rising distance of the outer sleeve 26 reaches the fourth threshold value, the top end of the L-shaped trigger arm 27 is in contact with the bottom of the second end plate 64, and subsequently, with the continuous rising of the L-shaped trigger arm 27, the second end plate 64 compresses the fourth spring 65 while driving the one-way screw rod 63 to continuously move upwards, and in the process of moving upwards, the one-way screw rod 63 drives the driving gear 62 to continuously rotate through the threaded sleeve 61, and the driving gear 62 drives the lifting column 46 to continuously rotate through the driven gear 49 and the rotating sleeve 48, and the lifting column 46 rotates through the top plate 44 and the annular mesh cylinder 45 to drive the placing plate 32 to continuously rotate, and the placing plate 32 rotates to make the silicon substrate on its top after cleaning close to its inner wall under the action of centrifugal force, and the residual cleaning agent penetrates through the annular mesh cylinder 45 and is output through the first output pipe 51 under the action of centrifugal force;

[0056] S6, when the rising distance of the outer sleeve 26 reaches the fifth threshold value, the outer sleeve 26 rises to the outer side of the reciprocating screw rod 21 to the topmost end of the reciprocating thread, and subsequently, with the continuous rotation of the reciprocating screw rod 21, the outer sleeve 26 moves downwards to reset, and when the moving distance of the outer sleeve 26 reaches the sixth threshold value, the outer sleeve 26 drives the placing plate 32 to reach the initial feeding station through the lifting seat 31, and subsequently, with the continuous rotation of the reciprocating screw rod 21, the outer sleeve 26 continues to move downwards, and at this time, due to the blockage of the limiting column 39, the limiting frame 36 relatively rises on the outer side of the lifting seat 31 to form a fence.

[0057] S7, when the outer sleeve 26 moves down to the seventh threshold value, the lower magnet 23 is adsorbed with the upper magnet 34, at this time, when the reciprocating screw 21 rotates, the placement plate 32 is driven to rotate synchronously by the upper magnet 34 and the telescopic rod 33, the centrifugal force generated in the rotation process of the placement plate 32 drives the silicon substrate cleaned on the top of the placement plate 32 to move out to the top edge of the lifting seat 31, in this process, the limiting frame 36 blocks it;

[0058] S8, when the outer sleeve 26 moves down to the eighth threshold value, the outer sleeve 26 moves to the lowest end of the reciprocating screw 21 outside the reciprocating screw thread, and then, with the continuous rotation of the reciprocating screw 21, the outer sleeve 26 moves up to reset, when the outer sleeve 26 drives the lifting seat 31 to reach the initial position again, the driving motor 22 is stopped, and then the silicon substrate cleaned on the top of the lifting seat 31 is taken off, and the silicon substrate to be cleaned is placed on the top of the placement plate 32 again;

[0059] S9, a porous silicon layer is prepared on the silicon substrate cleaned and dried, and then a SiOC buffer layer, a SiOC layer and a pure SiC coating layer are deposited in sequence.

[0060] Finally, it should be noted that: the above only for the preferred embodiments of the present application, and not for limiting the present application, although the foregoing detailed description of the present application is made with reference to the foregoing embodiments, for those skilled in the art, it still can be modified to the technical solutions recorded in the foregoing embodiments, or equivalent replacement of some technical features, any modification, equivalent replacement, improvement, etc. within the spirit and principles of the present application, should be included in the protection scope of the present application.

Claims

1. A chemical vapor deposition method for preparing a silicon carbide composite coating on monocrystalline silicon or polycrystalline silicon, characterized in that: The chemical vapor deposition method for preparing silicon carbide composite coatings on monocrystalline silicon or polycrystalline silicon is implemented by a silicon substrate ultrasonic cleaning device. The silicon substrate ultrasonic cleaning device includes a shell (1), a first driving mechanism (2) is provided at the bottom of the inner side of the shell (1), a placement and lifting mechanism (3) is provided at the top of the first driving mechanism (2), a cleaning centrifugal mechanism (4) is provided at the top of the inner side of the shell (1), a trigger-type drainage mechanism (5) is provided on the left side of the cleaning centrifugal mechanism (4), and a second driving mechanism (6) is provided at the top of the shell (1) and the top of the inner side of the shell (1). The second driving mechanism (6) is located on the left side of the cleaning centrifugal mechanism (4). The first drive mechanism (2) includes a reciprocating screw (21), a drive motor (22), a lower magnet (23), an inner sleeve (24), a first spring (25), an outer sleeve (26), and an L-shaped trigger arm (27); The reciprocating screw (21) passes through the outer shell (1) and is rotatably connected to the outer shell (1) through a bearing. The drive motor (22) is fixedly installed at the bottom of the reciprocating screw (21) and is connected to the reciprocating screw (21) in a transmission manner. The lower magnet (23) is fixedly installed at the top of the reciprocating screw (21). The inner sleeve (24), the first spring (25) and the outer sleeve (26) are sequentially sleeved on the outside of the reciprocating screw (21) from top to bottom. The inner sleeve (24) is slidably nested inside the outer sleeve (26) in the vertical direction and is slidably connected to the reciprocating screw (21). The first spring (25) is located inside the outer sleeve (26) and is fixedly connected between the inner sleeve (24) and the outer sleeve (26). The outer sleeve (26) is threadedly connected to the reciprocating screw (21). The L-shaped trigger arm (27) is fixedly installed on the top left side of the outer sleeve (26). The placement and lifting mechanism (3) includes a lifting seat (31), a placement plate (32), a telescopic rod (33), an upper magnet (34), a second spring (35), a limiting frame (36), a longitudinal slide groove (37), a longitudinal slider (38), and a limiting post (39); The lifting seat (31) is fixedly sleeved on the top of the outer side of the inner sleeve (24). The placement plate (32) is rotatably nested at the center of the top of the lifting seat (31) through a bearing. The telescopic rod (33) is fixedly sleeved at the center of the bottom of the placement plate (32). The upper magnet (34) is fixedly sleeved at the bottom end of the telescopic rod (33). The second spring (35) is sleeved on the outside of the telescopic rod (33) and fixedly connected between the placement plate (32) and the upper magnet (34). The limiting frame (36) is slidably sleeved on the outside of the lifting seat (31) in the vertical direction. The longitudinal groove (37) is opened on the inside of the limiting frame (36). The longitudinal slider (38) is slidably sleeved on the inside of the longitudinal groove (37) and fixedly connected to the lifting seat (31). The limiting post (39) is fitted to the bottom of the limiting frame (36) and fixedly connected to the inner wall of the outer shell (1). The cleaning centrifuge mechanism (4) includes a cleaning hood (41), a cleaning agent inlet pipe (42), a partition (43), a top plate (44), an annular mesh cylinder (45), a lifting column (46), a first end plate (47), a rotating sleeve (48), and a driven gear (49). The cleaning hood (41) is fixedly installed on the top inner side of the outer shell (1). An ultrasonic generator is fixedly installed inside the cleaning hood (41). The cleaning agent inlet pipe (42) is fixedly installed through the right side of the cleaning hood (41). The partition (43) is fixedly installed in the middle of the inner side of the cleaning hood (41). The partition (43) divides the inner side of the cleaning hood (41) into an upper chamber and a lower chamber. The top plate (44) is slidably installed inside the partition (43). The annular mesh cylinder (45) is fixedly installed on the inner side of the outer shell (1). At the bottom of the top plate (44), the lifting column (46) is fixedly installed at the top of the top plate (44) and slides vertically through the inner wall of the cleaning hood (41) and extends to the top of the cleaning hood (41). The first end plate (47) is fixedly installed at the top of the lifting column (46). The rotating sleeve (48) slides vertically and is nested on the outside of the lifting column (46) and is rotatably nested on the top of the outer shell (1) through a bearing. The driven gear (49) is fixedly sleeved on the outside of the rotating sleeve (48).

2. The chemical vapor deposition method for preparing a silicon carbide composite coating on monocrystalline silicon or polycrystalline silicon according to claim 1, characterized in that: The trigger-type drainage mechanism (5) includes a first output pipe (51), a sealing box (52), a second output pipe (53), a blocking block (54), a trigger groove (55), and a third spring (56).

3. The chemical vapor deposition method for preparing a silicon carbide composite coating on monocrystalline silicon or polycrystalline silicon according to claim 2, characterized in that: The first output tube (51) is fixedly installed through the bottom left side of the cleaning hood (41), the sealing box (52) is fixedly sleeved on the left side of the first output tube (51), the second output tube (53) is fixedly installed through the left side of the sealing box (52), the sealing block (54) is slidably installed in the sealing box (52) in the horizontal direction, the trigger groove (55) is installed through the bottom of the sealing block (54) in the vertical direction, and the third spring (56) is fixedly connected between the sealing block (54) and the inner wall of the sealing box (52).

4. The chemical vapor deposition method for preparing a silicon carbide composite coating on monocrystalline silicon or polycrystalline silicon according to claim 3, characterized in that: The second drive mechanism (6) includes a threaded sleeve (61), a drive gear (62), a one-way screw (63), a second end plate (64), and a fourth spring (65).

5. A chemical vapor deposition method for preparing a silicon carbide composite coating on monocrystalline silicon or polycrystalline silicon according to claim 4, characterized in that: The threaded sleeve (61) is rotatably nested on the top of the outer shell (1) via a bearing. The driving gear (62) is fixedly sleeved on the outside of the threaded sleeve (61) and meshes with the driven gear (49). The one-way screw (63) is located inside the threaded sleeve (61) and is threadedly connected to the threaded sleeve (61). The second end plate (64) is fixedly disposed at the bottom end of the one-way screw (63). The fourth spring (65) is sleeved on the outside of the one-way screw (63) and fixedly connected between the inner wall of the outer shell (1) and the second end plate (64).

6. A chemical vapor deposition method for preparing a silicon carbide composite coating on monocrystalline silicon or polycrystalline silicon according to claim 5, characterized in that, The method specifically includes the following steps: S1. Place multiple silicon substrates on the top of the placement plate (32), and continuously inject cleaning agent into the upper chamber through the cleaning agent input pipe (42). Start the drive motor (22), and the drive motor (22) drives the reciprocating screw (21) to rotate continuously. When the reciprocating screw (21) rotates, it drives the outer sleeve (26) to rise continuously. The outer sleeve (26) drives the L-shaped trigger arm (27) to rise, and at the same time, the first spring (25) drives the inner sleeve (24) to rise synchronously. When the inner sleeve (24) rises, it drives the multiple silicon substrates to move continuously towards the cleaning station through the lifting seat (31) and the placement plate (32). At the same time, the lifting seat (31) drives the limiting frame (36) to detach from the top of the limiting post (39) through the longitudinal slider (38). S2. When the outer sleeve (26) rises to the first threshold, the top of the placement plate (32) contacts the bottom of the annular mesh cylinder (45). Subsequently, as the placement plate (32) continues to rise, the placement plate (32) drives the top plate (44) to move upward inside the partition (43) through the annular mesh cylinder (45). When the partition (43) moves upward, it drives the lifting column (46) to move upward synchronously inside the rotating sleeve (48). S3. When the outer sleeve (26) rises to the second threshold, the top of the placement plate (32) contacts the bottom of the cleaning hood (41). At this time, due to the obstruction of the cleaning hood (41), the placement plate (32) cannot continue to move upward. At the same time, the annular mesh cylinder (45) connects the upper chamber and the lower chamber under the push of the placement plate (32). The cleaning agent inside the upper chamber continuously enters the lower chamber through the annular mesh cylinder (45), and then begins to perform ultrasonic cleaning on the silicon substrate. Due to the restriction of the placement plate (32), the inner sleeve (24) also cannot continue to rise. Subsequently, as the outer sleeve (26) continues to rise, the first spring (25) is continuously compressed, and at the same time, the outer sleeve (26) drives the L-shaped trigger arm (27) to continue to move upward. S4. When the outer tube (26) rises to the third threshold, the top of the L-shaped trigger arm (27) enters the inner side of the sealing box (52) and contacts the inner wall of the trigger groove (55). Subsequently, as the L-shaped trigger arm (27) continues to rise, the sealing block (54) continues to move to the left, thereby contacting the sealing of the outlet of the first output tube (51). At this time, the cleaning agent in the lower chamber enters the interior of the sealing box (52) through the first output tube (51) and is then discharged through the second output tube (53). S5. When the outer sleeve (26) rises to the fourth threshold, the top of the L-shaped trigger arm (27) contacts the bottom of the second end plate (64). As the L-shaped trigger arm (27) continues to rise, the second end plate (64) compresses the fourth spring (65) and drives the one-way screw (63) to move upward continuously. During the upward movement of the one-way screw (63), the active gear (62) is driven to rotate continuously through the threaded sleeve (61). The active gear (62) drives the lifting column (46) to rotate continuously through the driven gear (49) and the rotating sleeve (48). When the lifting column (46) rotates, the placement plate (32) is driven to rotate continuously through the top plate (44) and the annular mesh cylinder (45). When the placement plate (32) rotates, the silicon substrate cleaned on its top is brought close to its inner wall under the action of centrifugal force. At the same time, the residual cleaning agent passes through the annular mesh cylinder (45) under the action of centrifugal force and is output through the first output pipe (51). S6. When the outer tube (26) rises to the fifth threshold, the outer tube (26) rises to the top of the reciprocating thread on the outside of the reciprocating screw (21). As the reciprocating screw (21) continues to rotate, the outer tube (26) moves down to reset. When the outer tube (26) moves down to the sixth threshold, the outer tube (26) drives the placement plate (32) to the initial loading station through the lifting seat (31). As the reciprocating screw (21) continues to rotate, the outer tube (26) continues to move down. At this time, due to the obstruction of the limiting post (39), the limiting frame (36) rises relative to the outside of the lifting seat (31) to form a fence. S7. When the outer sleeve (26) moves down to the seventh threshold, the lower magnet (23) and the upper magnet (34) are attracted. At this time, when the reciprocating screw (21) rotates, it drives the placement plate (32) to rotate synchronously through the upper magnet (34) and the telescopic rod (33). The centrifugal force generated during the rotation of the placement plate (32) drives the cleaned silicon substrate on the top of the placement plate (32) to move to the top edge of the lifting seat (31). During this process, the limiting frame (36) blocks it. S8. When the outer sleeve (26) moves down to the eighth threshold, the outer sleeve (26) moves to the lowest end of the reciprocating thread on the outside of the reciprocating screw (21). Subsequently, as the reciprocating screw (21) continues to rotate, the outer sleeve (26) moves up to reset. When the outer sleeve (26) drives the lifting seat (31) to reach the initial position again, the drive motor (22) is stopped. Then, the silicon substrate cleaned on the top of the lifting seat (31) is removed, and the silicon substrate to be cleaned is placed on the top of the placement plate (32) again. S9. A porous silicon layer is prepared on the cleaned and dried silicon substrate, followed by the sequential deposition of a SiOC buffer layer, a SiOC layer, and a pure SiC coating.

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