Method for manufacturing a gas injection mechanism

Abstract

The application provides a manufacturing method of a gas injection mechanism for a gas phase reaction device, which comprises a first gas injection mechanism in a middle region and a second gas injection mechanism in a peripheral region. The manufacturing method of the second gas injection mechanism comprises forming a plurality of conical channels along a direction which is consistent with the rotating direction of a supporting disc in the gas phase reaction device and opposite to the gas injection mechanism during the reaction process, and then forming tubular channels which are in one-to-one correspondence with the conical channels, and setting a partition to separate the second gas injection mechanism into a plurality of independent sub-regions, so as to finely adjust and match the gas flow, thereby inhibiting or completely eliminating the vortex flow in the reaction chamber and improving the utilization rate of the gas.

Description

[0001] This application is a divisional application of the applicant's (Chuyun Precision Technology (Shanghai) Co., Ltd.) invention patent application filed on September 30, 2022, entitled "Gas Injection Mechanism and Manufacturing Method Thereof, Gas Phase Reaction Device", with application number "2022112088380". Technical Field

[0002] This invention relates to the field of semiconductor devices and apparatus technology, and in particular to a method for manufacturing a gas injection mechanism. Background Technology

[0003] The reaction chamber is a crucial chamber in semiconductor device manufacturing processes. In gas-phase reaction apparatus, the reaction chamber is where the reactants are introduced by gas and a flow field is established. For example, in a reaction chamber for material growth via gas-phase reaction, the transport of the gas source material and the removal of byproducts after the growth reaction are accomplished through the flow field established by the carrier gas and reactant gas together.

[0004] The support disk that carries the substrate for material growth in the airflow typically rotates during the material growth process. For the reaction chamber where the support disk rotates, the airflow near the outer edge of the support disk experiences both a flow velocity along the main axis of the reaction chamber and a tangential flow velocity created by the support disk's drag. The presence of this tangential flow velocity increases the total velocity of the airflow at the edge, especially when the support disk rotates at high speed. This high tangential velocity generates vortices in the flow field along the incoming flow direction at the edge of the support disk. These gas vortices negatively impact the use of the chamber in several ways: reducing the uniformity of the grown material on the substrate in and around the vortex region; and decreasing the stability of the growth environment and the growth process within the chamber.

[0005] For gas-carrying reaction chambers, the distribution and morphology of the airflow field during actual material growth are typically adjusted by controlling three overall process parameters: total process gas volume in the reaction chamber, reaction chamber pressure, and carrier plate rotation speed. Adjusting these three parameters can suppress and eliminate gas vortices within a certain direction and range; however, this adjustment itself limits the range of usable process parameters. Furthermore, adjusting these parameters to eliminate gas vortices often increases the amount of carrier gas and source material gas used, reducing the efficiency of source material utilization and increasing material consumption and growth costs. Summary of the Invention

[0006] In view of the above-mentioned defects in the gas phase reaction device in the prior art, the present invention provides a method for manufacturing a gas injection mechanism to solve one or more of the above problems.

[0007] To achieve the above objectives, the present invention provides a method for manufacturing a gas injection mechanism for a gas-phase reaction device. The gas injection mechanism includes a first gas injection mechanism located in a central region and a second gas injection mechanism located in a peripheral region and surrounding the first gas injection mechanism. The gas-phase reaction device includes at least one isolator that divides the second gas injection mechanism into multiple independent sub-regions. The isolator is distributed circumferentially along the circumference of the second gas injection mechanism, or the isolator extends from the center to the edge of the gas injection mechanism and is formed within the second gas injection mechanism. The method for manufacturing the second gas injection mechanism includes the following steps:

[0008] S1: Provide a main body with a certain thickness, the main body includes a first side and a second side arranged opposite to each other, the first side is configured as an air outlet side, and define a main axis that is perpendicular to the plane where the first side of the main body is located and passes through the geometric center of the air outlet surface of the gas injection mechanism;

[0009] S2: Along the direction in which the gas is ejected from the second gas injection mechanism to form a rotating airflow, and in the direction of rotation of the support plate located opposite the gas injection mechanism in the gas phase reaction device during the reaction process, a conical drill bit with a cone apex angle is used to chisel the main body from the first side along the first direction to obtain a plurality of cone-shaped channels, wherein the bottom of each cone-shaped channel is located on the first side, and the apex of each cone-shaped channel is located in the main body between the first side and the second side;

[0010] S3: Using a cylindrical drill bit with a diameter, chisel along the second direction from the top of each cone toward the second side, or from the second side toward the top of each cone, to obtain a plurality of tubular channels, wherein the tubular channels are connected one-to-one with the cone-shaped channels to form a plurality of second gas delivery channels that penetrate the body in the thickness direction.

[0011] Wherein, the tangent plane about the principal axis passing through the centroid O of the bottom surface of the conical channel is defined as the tangent plane containing the centroid O of the bottom surface of the conical channel. In at least a portion of the second gas delivery channel, the first direction causes the projection of the conical axis of the conical channel onto the tangent plane containing its centroid O to form an angle with the principal axis. The second direction causes the projection of the tubular channel's axis onto the tangent plane containing the centroid O of the bottom surface of the conical channel to form an angle with the principal axis. The angle and angle At least one of them is not 0, thereby causing at least a portion of the second gas delivery channel to form a rotating airflow channel.

[0012] Optionally, in at least a portion of the second gas delivery channel, the first direction further forms an angle θ1 between the vertical plane containing the cone axis of the rotating airflow channel and the tangent plane containing the centroid of the bottom surface of the conical channel, and the second direction further forms an angle θ2 between the vertical plane containing the tube axis and the tangent plane containing the centroid of the bottom surface of the conical channel, and at least one of the angles θ1 and θ2 is not 0, wherein: the straight line passing through the centroid O point of the bottom surface of the conical channel and parallel to the main axis is defined as the axial line of point O; the straight line passing through the endpoint O2 point of the tube axis at the connection between the tube channel and the conical channel and parallel to the main axis is defined as the axial line of point O2; the vertical plane containing the cone axis is the plane intersected by the axial line of the cone axis and the axial line of point O; and the vertical plane containing the tube axis is the plane intersected by the axial line of the tube axis and the axial line of point O2.

[0013] Optionally, a main axis is defined, which is perpendicular to the plane containing the first side of the main body and passes through the geometric center of the gas injection mechanism. The method for manufacturing the gas injection mechanism further includes:

[0014] A vertical airflow channel parallel to the main axis is formed by excavating the main body, so that the second gas injection mechanism includes the vertical airflow channel.

[0015] Optionally, the first gas injection mechanism and the second gas injection mechanism can be machined on the same sheet material, or the first gas injection mechanism and the second gas injection mechanism can be machined on different sheet materials respectively.

[0016] Optionally, the gas-phase reaction device has a reaction chamber, the reaction chamber is provided with a top plate, and the top plate is provided with a plurality of the isolation elements.

[0017] Optionally, the isolation element is a ridge protruding from the top plate toward the second side of the second gas injection mechanism.

[0018] Optionally, the gas-phase reaction device has a reaction chamber, and the isolation element is formed as a ridge protruding from the second side of the second gas injection mechanism toward the top plate.

[0019] Optionally, when the isolator is distributed in a circumferential manner along the circumference of the second gas injection mechanism, the isolator divides the second gas injection mechanism into at least two concentric annular sub-regions.

[0020] Optionally, when the isolator extends along the direction from the center to the edge of the gas injection mechanism in the second gas injection mechanism, the isolator divides the second gas injection mechanism into at least two fan-shaped sub-regions.

[0021] Optionally, at least two of the said fan-shaped sub-regions have the same area.

[0022] As described above, the method for manufacturing the gas injection mechanism of the present invention has the following beneficial effects:

[0023] The gas injection mechanism of the present invention is used in a gas-phase reaction apparatus, comprising a first gas injection mechanism located in a central region and a second gas injection mechanism located in a peripheral region surrounding the first gas injection mechanism. The second gas injection mechanism includes a plurality of second gas delivery channels, and the manufacturing method described herein ensures that at least a portion of the second gas delivery channels include tubular channels and conical channels. The apex of the conical channel is connected to the tubular channel, and the bottom of the conical channel serves as the gas outlet surface, which is non-circular. The projection of the conical axis of the conical channel onto the tangent plane containing its centroid O point on its base forms an angle with the principal axis. The projection of the tube axis of the tubular channel communicating with the conical channel onto the tangent plane containing the centroid O of the bottom surface of the conical channel has an angle with the principal axis. And angle and angle At least one of the values ​​is not zero. The aforementioned special configuration of the second gas delivery channel allows the second gas located in the peripheral area to be ejected along the second gas delivery channel to form a rotating airflow. The direction of this rotating airflow is consistent with the rotation direction of the carrier plate in the reaction device during the reaction process. This rotating airflow has tangential velocity and momentum, reducing the relative velocity between the airflow in the middle and edge flow fields within the reaction chamber. This results in smoother flow impact mixing and streamline turning processes in the edge region of the reaction chamber, thereby suppressing or completely eliminating the generation of eddies within the reaction chamber and making the laminar flow characteristics of the reaction chamber flow field more stable. It also expands the usable range of overall process parameters, such as the total process gas volume of the reaction chamber, the pressure of the reaction chamber, and the rotational speed of the carrier plate. This expanded usable range of process parameters further helps to improve the utilization rate of the carrier gas and source material gas, thus effectively reducing the cost of material growth. It also reduces particle defects in the grown material on the carrier plate in the reaction chamber, improving product yield. The above effects are particularly pronounced when the carrier plate rotates at high speeds (above 200 RPM). The gas-phase reaction device includes at least one isolator that divides the second gas injection mechanism into multiple independent sub-regions. The isolator is distributed in a circumferential manner along the circumference of the second gas injection mechanism, or the isolator extends from the center to the edge of the gas injection mechanism. This facilitates fine adjustment and matching of the airflow, thereby suppressing or completely eliminating eddies in the reaction chamber and improving gas utilization.

[0024] The gas-phase reaction device with the above-mentioned gas injection mechanism can reduce and suppress the generation of gas flow vortices, obtain a uniform and stable gas flow field, thereby expanding the settable range of process parameters and helping to improve the utilization rate of carrier gas and source material gas, thus effectively reducing the cost of material growth. Attached Figure Description

[0025] Figure 1 The diagram shown is a front cross-sectional view of the reaction chamber of the gas phase reaction device where the gas injection mechanism is located, as provided in Embodiment 1 of the present invention.

[0026] Figure 2 Displayed as Figure 1 A bottom view of the gas injection mechanism.

[0027] Figure 3 The diagram shown is a bottom view of the gas injection mechanism in one alternative embodiment.

[0028] Figure 4 Displayed as Figure 2 A bottom view of the second gas injection mechanism shown in the diagram.

[0029] Figure 5 Displayed as Figure 2 A top-view three-dimensional structural diagram of the second gas injection mechanism of the gas injection system shown.

[0030] Figure 6 Displayed as along Figure 4 Side view sectional view of line HH in the middle.

[0031] Figure 7 Displayed as Figure 5 The diagram shows a radial AA cross-sectional view of the second gas injection mechanism, and a three-dimensional perspective view of the second gas injection mechanism from a top view.

[0032] Figure 8 The diagram shown is a bottom view of the second gas injection mechanism provided in Embodiment 2 of the present invention, wherein the tubular channel in the second gas injection mechanism is shown in partial perspective.

[0033] Figure 9 Displayed as Figure 8 A magnified view of part P in the middle.

[0034] Figure 10 Displayed as Figure 8 The diagram shows a radial cross-sectional view of the second gas injection mechanism, and a three-dimensional perspective view of the second gas injection mechanism from a top view.

[0035] Figure 11The diagram shown is a top-view perspective three-dimensional structural schematic of the second gas injection mechanism of the gas injection mechanism provided in Embodiment 3 of the present invention.

[0036] Component designation explanation

[0037] 100 Gas injection mechanism 1023 Third sub-region

[0038] 101 First gas injection mechanism 1024 First side

[0039] 1010 First gas delivery channel 1025 Second side

[0040] 1010-1 First gap 103 Isolation component

[0041] 1010-2 Second gap 110 First circumference

[0042] 102(102')(102”) Second gas injection mechanism 120 Second circumference

[0043] 1020(1020')(1020”) Second gas delivery channel 130 Third circumference

[0044] 1026 Rotating airflow channel 200 Reaction chamber

[0045] 1026-1 (1026'-1) Conical Channel 201 Support Plate

[0046] 1026-2 (1026'-2) Tubular channel 300 Gas supply end

[0047] 1021 First Sub-area 301 Gas Supply Pipeline

[0048] 1022 Second Sub-region Detailed Implementation

[0049] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0050] Example 1

[0051] This embodiment provides a gas injection mechanism 100, which is used for... Figure 1The illustrated gas-phase reaction apparatus includes a gas injection mechanism 100 disposed within the reaction chamber 200. This mechanism delivers the reaction gas into the reaction chamber 200. A support plate 201 is disposed within the reaction chamber 200, and the gas injection mechanism 100 is positioned opposite the support plate 201. The gas-phase reaction apparatus can be, for example, a vapor deposition apparatus, specifically a chemical vapor deposition apparatus, a physical vapor deposition apparatus, a plasma-enhanced vapor deposition apparatus, or a metal-organic chemical vapor deposition (MOCVD) apparatus. This embodiment uses the gas injection mechanism of an MOCVD apparatus as an example for illustration. It should be understood that this apparatus is merely exemplary, and the present invention is not limited to this type of apparatus.

[0052] like Figure 1 As shown, the gas-phase reaction apparatus of this embodiment has a reaction chamber 200. The cross-section of the reaction chamber 200 of the gas-phase reaction apparatus is generally circular or near-circular, or it can be rectangular or other structures known to those skilled in the art, which will not be elaborated here. The reaction chamber 200 can be a vertical flow chamber with vertical air intake, or a horizontal flow chamber with central air intake. The reaction chamber 200 can be an upright chamber in which the gas injection mechanism 100 and the support plate 201 are arranged opposite each other, with the gas injection mechanism 100 located at the upper part and the support plate 201 located at the lower part, or it can be an inverted chamber in which the gas injection mechanism 100 and the support plate 201 are arranged opposite each other, with the support plate 201 located at the upper part and the gas injection mechanism 100 located at the lower part. For ease of description, this embodiment uses... Figure 1 The gas injection mechanism 100 is described using a circular cross-section of the reaction chamber 200 shown as an example of an upright vertical flow chamber with the gas injection mechanism 100 located at the top and the support plate 201 located at the bottom.

[0053] Reference Figure 1 and Figure 2As shown, a support disk 201 for holding the substrate to be processed is provided in the reaction chamber 200. The support disk 201 rotates about the rotation axis A during the gas phase reaction. A gas injection mechanism 100 is disposed opposite to the support disk 201. For example, the gas injection mechanism 100 is disposed at the top of the reaction chamber 200 to inject gas into the reaction chamber 200, and the support disk 201 is located below the gas injection mechanism 100. The gas injection mechanism 100 provided in this embodiment has a generally disc-shaped structure, including a first gas injection mechanism 101 for conveying a first gas and a second gas injection mechanism 102 for conveying a second gas. The first gas injection mechanism 101 is located in the middle region of the gas injection mechanism 100, and the second gas injection mechanism 102 is located in the outer region of the gas injection mechanism 100 and is disposed around the first gas injection mechanism 101. The gas-phase reaction apparatus further includes a gas supply end 300 and a gas supply pipeline 301. The gas supply end 300 is connected to a first gas injection mechanism 101 and a second gas injection mechanism 102 via the gas supply pipeline 301, for supplying a first gas to the first gas injection mechanism 101 and a second gas to the second gas injection mechanism 102. Preferably, during the gas-phase reaction, the average molecular weight of the second gas is greater than or equal to the average molecular weight of the first gas.

[0054] Similarly, refer to Figure 1 As shown, the second gas injection mechanism 102 has a first side 1024 and a second side 1025 disposed opposite to each other. The first side 1024 is the gas outlet surface facing the support plate 201. Similarly, the first gas injection mechanism 101 also has a gas outlet surface facing the support plate 201. A main axis B is defined, which is perpendicular to the plane containing the first side 1024 (which can be equivalent to the gas outlet surface of the disc-shaped gas injection mechanism 100) and passes through the geometric center of the gas injection mechanism 100. The main axis B can be parallel to or not parallel to the rotation axis A of the support plate 201. Preferably, the main axis B is parallel to the rotation axis A of the support plate 201, and preferably, the main axis B coincides with the rotation axis A.

[0055] like Figure 2 The diagram shows a bottom-view cross-sectional view of the gas injection mechanism 100. It should be understood that, in this invention, "bottom view" refers to the view direction from the first side 1024 to the second side 1025, and "top view" refers to the view direction from the second side 1025 to the first side 1024.

[0056] like Figure 2As shown, the first gas injection mechanism 101 includes a plurality of first gas delivery channels 1010, which are distributed within the first gas injection mechanism 101. In this embodiment, the first gas delivery channels 1010 are configured as slit-like channels extending in the same direction. During the gas-phase reaction, the first gas serves as both a reaction source gas and a carrier gas, used to react and generate the target product. Exemplarily, for III-V MOCVD, the first gas is a Group III metal-organic source gas, a Group V hydride source gas, and a carrier gas. The first gas delivery channel 1010 includes a first slit 1010-1 and a second slit 1010-2. The first slit 1010-1 is used to deliver the Group III metal-organic source gas and the carrier gas to the gas-phase reaction region, and the second slit 1010-2 is used to deliver the Group V hydride source gas and the carrier gas to the gas-phase reaction region, thereby enabling the Group III metal-organic source gas and the Group V hydride source gas to react on the substrate to generate III-V compounds.

[0057] Preferably, the first slit 1010-1 and the second slit 1010-2 are alternately arranged in the first gas injection mechanism 101. Preferably, a third slit (not shown) is also included between the alternately arranged first slit 1010-1 and the second slit 1010-2, through which carrier gas (or purge gas) that does not contain reactive gas and does not react with reactive gas flows out.

[0058] In another optional embodiment of this example, such as Figure 3 As shown, the first gas conveying channel 1010 has a perforated structure, such as circular holes, elliptical holes, rhomboid holes, or similar perforation structures. These holes can be arranged in concentric ring regions, strip-shaped interval distribution regions, several groups of holes staggered distribution, or several fan-shaped regions, etc. Those skilled in the art can adjust the shape and positional relationship of the hole distribution according to actual process requirements, which is not limited here.

[0059] In another optional embodiment of this embodiment, the first gas delivery channel may also be a combination of a slit channel and a perforated structure, wherein the distribution, shape and positional relationship of the slit channel and the perforated structure can also be adjusted according to actual process requirements.

[0060] In this embodiment, the airflow direction formed by the first gas ejected from the first gas delivery channel 1010 is parallel to the main axis B, that is, the first gas delivery channel 1010 is a vertical airflow channel, and the airflow direction formed is perpendicular to the bearing plate 201.

[0061] Similarly, refer to Figure 2 and Figure 3In this embodiment, the second gas injection mechanism 102 includes several second gas delivery channels 1020 for delivering a second gas. This second gas can be one or more of a purge gas, carrier gas, and reaction source gas. Preferably, the second gases do not react with each other or react with each other but do not generate the target product. If the second gas injection mechanism 102 introduces all the reaction sources involved in the reaction, it will cause unnecessary growth (such as deposition on the vessel wall), waste source gas, reduce equipment maintenance cycles, and some reaction sources will enter the internal gas phase reaction region, affecting the uniformity of the grown material. In this embodiment, the second gases introduced into the second gas delivery channels 1020 do not react with each other or react with each other but do not generate the target product, thus effectively avoiding the above problems and improving the uniformity of the grown material. For example, for III-V MOCVD, the second gas can be a group V hydride source gas and a carrier gas, or a purge gas.

[0062] like Figure 4 and Figure 5 As shown, a plurality of second gas delivery channels 1020 can be distributed in the second gas injection mechanism 102 in any manner. In this embodiment, at least a portion of the second gas delivery channels 1020 are rotating airflow channels 1026, that is, all of the second gas delivery channels 1020 can be rotating airflow channels 1026 (the second gas is ejected along the rotating airflow channel 1026 to form a rotating airflow), or they can be a combination of a vertical airflow channel (the airflow direction formed is perpendicular to the support plate) similar to the first gas delivery channel 1010 and the rotating airflow channel 1026.

[0063] like Figure 6 and Figure 7 They respectively showed Figure 4 Side view section of line HH and Figure 5 The radial cross-sectional view shown is used to illustrate the structure of the rotating airflow channel 1026. For example... Figure 6 and Figure 7 As shown, the rotating airflow channel 1026 includes a tubular channel 1026-2 extending from the second side 1025 to the first side 1024 and a conical channel 1026-1 communicating with the tubular channel 1026-2. The apex of the conical channel 1026-1 communicates with the tubular channel 1026-2, and the bottom of the conical channel 1026-1 is located on the first side 1024 of the second gas injection mechanism 102, serving as the outlet surface. This outlet surface is non-circular, and can be, for example, elliptical, rhomboid, rectangular, triangular, semi-circular, or polygonal. Preferably, as... Figure 7 As shown, the cone-shaped channel 1026-1 has an elliptical base.

[0064] In this embodiment, the following are defined: the centroid of the cone-shaped channel 1026-1 is point O (the centroid of the cone-shaped channel 1026-1 is the geometric center of the cone base), the tangent line about the main axis B passing through the centroid O of the cone-shaped channel 1026-1 is the tangent line of point O, the straight line passing through the centroid O of the cone-shaped channel 1026-1 and parallel to the main axis B is the axial line of point O, and the tangent plane containing the centroid O is the tangent plane about the main axis B passing through the centroid O of the centroid O, that is, the plane formed by the tangent line of point O and the axial line of point O.

[0065] The projection of the cone axis of the cone-shaped channel 1026-1 onto the tangent plane containing its centroid O at its base has an angle with the principal axis B. That is, the projection of the conical axis of the conical channel 1026-1 onto the tangent plane containing its centroid O point on its bottom surface can be inclined or parallel to the main axis B; the projection of the tubular axis of the tubular channel 1026-2, which communicates with the conical channel 1026-1, onto the tangent plane containing its centroid O point on the bottom surface of the conical channel 1026-1, has an angle with the main axis B. That is, the projection of the tube axis of the tubular channel 1026-2 onto the tangent plane located at the centroid O of the bottom surface can be inclined or parallel to the principal axis B. However, the angle... and angle At least one of them is not 0, that is, if the projection of the cone axis of the cone-shaped channel 1026-1 onto the tangent plane where its centroid O point on the bottom surface is located is parallel to the principal axis B. The projection of the tube axis of the tubular channel 1026-2 onto the tangent plane containing the centroid O of the bottom surface of the conical channel 1026-1 is inclined relative to the principal axis B. Alternatively, if the projection of the tubular axis of the tubular channel 1026-2 onto the tangent plane containing the centroid O of the bottom surface of the conical channel 1026-1 is parallel to the principal axis B. The projection of the cone axis of the cone-shaped channel 1026-1 onto the tangent plane containing its centroid O at its base is inclined relative to the principal axis B. Alternatively, the projection of the tube axis of the tubular channel 1026-2 onto the tangential plane containing the centroid O of the bottom surface of the conical channel 1026-1 is inclined relative to the principal axis B. Meanwhile, the projection of the cone axis of the cone-shaped channel 1026-1 onto the tangent plane located at its centroid O point on the bottom surface is also inclined relative to the principal axis B. The projection of the cone axis of the cone-shaped channel 1026-1 and / or the tube axis of the tubular channel 1026-2 onto the tangential plane containing the centroid O of the bottom surface of the cone-shaped channel 1026-1 has the aforementioned angle with the main axis B. This means that the airflow velocity of the gas ejected from the self-rotating airflow channel 1026 includes both tangential and axial components, thus forming the rotating airflow channel 1026.

[0066] For ease of understanding, this embodiment takes the example where the conical axis of the conical channel 1026-1 and the tubular axis of the tubular channel 1026-2 are both located on the tangential plane of the centroid O point of the bottom surface of the conical channel 1026-1. Figure 4 and Figure 6 As shown, Figure 6 Displayed as along Figure 4 The side view sectional view of line HH in the diagram; the section passing through line HH is... Figure 4 The tangent plane is located at the centroid O of the bottom surface of the conical channel 1026-1 of the rotating airflow channel 1026 marked in the middle. The cone apex of the conical channel 1026-1 is defined as point O1, the endpoint of the tube axis of the tubular channel 1026-2 at the connection between the tubular channel 1026-2 and the conical channel 1026-1 is defined as point O2, and the geometric center of the tubular channel 1026-2 located at one end of the second side 1025 of the second gas injection mechanism 102 is defined as point O3. That is, the line connecting point O and point O1 is the cone axis OO1 of the conical channel 1026-1, the line connecting point O2 and point O3 is the tube axis O2O3 of the tubular channel 1026-2, and the straight line passing through the centroid O of the bottom surface of the conical channel 1026-1 and parallel to the main axis B is the axial line ON of point O. In this case, the projection of the cone axis OO1 of the conical channel 1026-1 onto the tangent plane containing the centroid O of its bottom surface is the cone axis OO1 itself. Similarly, the projection of the tube axis O2O3 of the tubular channel 1026-2, which communicates with the conical channel 1026-1, onto the tangent plane containing the centroid O of the bottom surface of the conical channel 1026-1 is the tube axis O2O3 itself. At this time, the cone axis OO1 of the conical channel 1026-1 forms an angle with ON (ON is parallel to the main axis B). The tubular channel 1026-2 has an angle between its tube axis O2O3 and O2N' (O2N' is parallel to the main axis B). Furthermore, the angle and angle At least one of them is not 0.

[0067] When the conical axis of the conical channel 1026-1 and the tubular axis of the tubular channel 1026-2 are not located on the tangential plane of the centroid O of the bottom surface of the conical channel 1026-1, it is easy to understand that as long as there is an angle between the projection of the conical axis of the conical channel 1026-1 and / or the tubular axis of the tubular channel 1026-2 onto the tangential plane of the centroid O of the bottom surface of the conical channel 1026-1 and the axial line of point O (parallel to the main axis B) (generally, for actual processing and application, this angle is not 90°), the gas flow velocity ejected from the channel can include both tangential and axial components, thus forming a rotating gas flow channel 1026. The second gas injection mechanism 102 includes several of these rotating gas flow channels 1026, and during the reaction process, the gas ejected from the second gas injection mechanism 102 forms a rotating gas flow.

[0068] The second gas supplied by the external gas supply end 300 flows into the reaction chamber 200 through the rotating airflow channel 1026. The arrangement of multiple rotating airflow channels 1026 on the first side 1024 of the second gas injection mechanism 102 makes it possible to form a rotating airflow when the second gas is ejected from the rotating airflow channel 1026. The rotating airflow has both axial velocity and momentum and tangential velocity and momentum.

[0069] In this embodiment, the arrangement of the rotating airflow channel 1026 on the second gas injection mechanism ensures that the rotation direction of the rotating airflow is consistent with the rotation direction of the support disk 201, which is located opposite to the gas injection mechanism 100 in the gas phase reaction device, during the reaction process. This is because the airflow at the edge of the support disk 201 will have a tangential velocity due to the drag of the support disk (especially for a high-speed rotating support disk (speed above 200 RPM), the tangential velocity is even greater), which will collide and mix with the incoming flow (generally the axial incoming flow), thereby generating vortices in the incoming flow direction at the edge of the support disk 201. By aligning the rotation direction of the rotating airflow with that of the bearing disk 201 during the reaction process, the edge flow changes from an axial flow to a flow with a tangential velocity in the same direction. This reduces the relative velocity of the airflow at the edge of the reaction chamber 200, thus smoothing the flow impact mixing and streamline turning process in the edge region. This suppresses or completely eliminates the generation of vortices within the reaction chamber 200, resulting in more stable laminar flow characteristics. Conversely, if the direction of the rotating airflow is not aligned with the rotation direction of the bearing disk 201, the relative velocity between the airflow at the edge of the bearing disk 201 and the incoming flow increases, exacerbating vortices.

[0070] The ratio of the tangential to the axial components of the rotating airflow velocity should not be too large; otherwise, it will significantly affect the airflow in the internal region, hindering the balanced injection of gas into the reaction chamber 200. Preferably, Preferably,

[0071] Preferably, the angle with horns At least one angle of 5° or more is required to make the resulting rotating airflow effect more pronounced.

[0072] Preferably, in each rotating airflow channel 1026, the angle with horns They are the same size, and the tube axis of the tubular channel 1026-2 and the cone axis of the cone channel 1026-1 are parallel or collinear to each other, making it easier to control the speed of the rotating airflow.

[0073] Optionally, in the second gas injection mechanism 102, at least a portion of the rotating airflow channel 1026 has at least one of the following features: (1) the aforementioned angle Same; (2) the above angles (3) The cone bottom areas of the cone-shaped channels 1026-1 are the same. That is, each rotating airflow channel 1026 can have the same structure or different structures. The rotating airflow channel 1026 is designed according to different reaction chambers and process requirements, so as to minimize the eddies in the gas flow field near the edge of the bearing disk 201.

[0074] It should be noted that each rotating airflow channel 1026 is not limited to containing only one tubular channel 1026-2 and one conical channel 1026-1. The rotating airflow channel 1026 may contain an unlimited number of combinations of tubular channels 1026-2 and conical channels 1026-1. For example, two tubular channels 1026-2 are connected to one conical channel 1026-1, or one tubular channel 1026-2 is connected to two conical channels 1026-1. Taking one tubular channel 1026-2 connected to two conical channels 1026-1 as an example, the two conical channels 1026-1 are stacked, the tubular channel 1026-2 is connected to the cone apex of the first conical channel, the first conical channel is connected to the second conical channel, and the cone bottom of the second conical channel is located on the air outlet side. In this case, the centroid O of the bottom surface is the centroid of the bottom surface of the second conical channel. The projection of the cone axis of the first cone-shaped channel onto the tangent plane located at the centroid O of the bottom surface has an angle with the principal axis B. The projection of the cone axis of the second cone-shaped channel onto the tangent plane located at the centroid O point of the bottom surface has an angle with the principal axis B. The projection of the tubular channel's axis onto the tangent plane located at the centroid O of the bottom surface forms an angle with the principal axis B. if only and If at least one of them is not 0, a rotating airflow channel can be formed.

[0075] In an optional embodiment, the second gas injection mechanism 102 is located on the outer side of the support disk 201. In another optional embodiment, due to the use of the rotating airflow channel 1026 that generates rotating airflow, the second gas injection mechanism 102 can cover the edge of the support disk 201, and the covered area does not exceed 36% of the area of ​​the support disk 201 (i.e., the radius of the uncovered area along the radial direction of the support disk is greater than or equal to 80% of the radius of the support disk). Compared with the prior art, while ensuring the uniformity of growth of the effective growth area on the support disk, the area covered by the second gas injection mechanism 102 on the support disk is increased, which can reduce the waste of reaction source gas and improve the efficiency of reaction source utilization.

[0076] In this embodiment, the second gas delivery channel 1020 is distributed in the second gas injection mechanism 102. Optionally, at least a portion of the second gas delivery channels 1020 are arranged in a ring or fan-shaped pattern in the peripheral area of ​​the gas injection mechanism 100. Preferably, the second gas delivery channels 1020 are arranged to form a concentric ring region. Preferably, the second gas delivery channels 1020 are arranged to form multiple concentric ring regions, each concentric ring region having the same number of second gas delivery channels 1020, or at least two concentric ring regions having different numbers of second gas delivery channels 1020, the specific number distribution depending on process requirements. Preferably, the second gas delivery channels 1020 in each concentric ring region are arranged radially aligned. Preferably, the second gas delivery channels 1020 in each concentric ring region are arranged radially staggered. Preferably, the area of ​​the outermost ring region is not less than the area of ​​the innermost ring region; or the area of ​​the concentric ring regions gradually increases from the innermost ring region to the outermost ring region; or the area of ​​the concentric ring regions gradually increases from the innermost ring region to the outermost ring region, and at least two adjacent ring regions have the same area.

[0077] by Figure 4 and Figure 5 Taking the disc-shaped gas injection mechanism 100 shown as an example, the second gas delivery channel 1020 is distributed circumferentially in the second gas injection mechanism 102. Optionally, when the second gas delivery channel 1020 is distributed circumferentially in the second gas injection mechanism 102, it can be distributed along one or more circumferences in the second gas injection mechanism 102.

[0078] When the second gas delivery channel 1020 is distributed along multiple circumferences in the second gas injection mechanism 102, the multiple circumferences are either concentric or non-concentric. Preferably, the second gas delivery channel 1020 is distributed along multiple concentric circumferences in the second gas injection mechanism 102, for example, as... Figure 4 and Figure 5As shown, an exemplary illustration illustrates a second gas delivery channel 1020 distributed along three concentric circumferences—a first circumference 110, a second circumference 120, and a third circumference 130—within a second gas injection mechanism 102. The number of second gas delivery channels 1020 on each circumference may be the same or different, and the dimensions of the second gas delivery channels 1020 on each circumference may be the same or different. At least one circumference includes a rotating airflow channel 1026. When the rotating airflow channels 1026 are distributed across multiple circumferences, the number of rotating airflow channels 1026 on each circumference may be the same or different. However, regardless of whether the number of rotating airflow channels 1026 on each circumference is the same, from the innermost annular region to the outermost annular region of the concentric annular region (i.e. from the first circumference 110 to the third circumference 130), the rotating airflow channel 1026 has at least one of the following characteristics: (1) the area of ​​the cone bottom in the outermost annular region is not less than the area of ​​the cone bottom in the innermost annular region; or the area of ​​the cone bottom of the cone-shaped channel 1026-1 gradually increases; or the area of ​​the cone bottom of the cone-shaped channel 1026-1 gradually increases, and the area of ​​the cone bottom of the cone-shaped channel in at least two adjacent annular regions is the same; (2) the corner of the outermost annular region Not less than the corner of the innermost annular region Or angle Gradually increase; or angle Angles that gradually increase in size and in at least two adjacent annular regions. Same; (3) The corner of the outermost annular region Not less than the corner of the innermost annular region Or angle Gradually increase; or angle Gradually increasing in size and including at least two adjacent annular regions. The same applies. Therefore, the difference between the airflow velocity direction of the airflow ejected from the rotating airflow channel 1026 on the first circumference 110 near the inner region (i.e., the first gas injection mechanism 101) and the airflow velocity direction of the airflow ejected from the first gas injection mechanism 101 (the first gas delivery channel 1010 is a vertical airflow channel) is minimized, reducing the impact on the airflow in the internal gas phase reaction region. The tangential velocity and momentum of the airflow ejected from the rotating airflow channel 1026 on the second circumference 120 and the third circumference 130 gradually increase to reduce the impact of flow mixing in the edge region, thereby improving the overall airflow stability and helping to improve the utilization rate of carrier gas and source material gas. This effectively reduces the cost of material growth and also reduces particle defects in the growth material on the support plate 201 in the reaction chamber 200, improving product yield.

[0079] It should be noted that, preferably, the angles of the various rotating airflow channels 1026 contained in the same concentric annular region are... The same. However, in some cases, in order to obtain a better spatial distribution in the rotating airflow, it may be necessary to select the angle of each rotating airflow channel 1026 within the same concentric annular region. The settings are not entirely the same. When the angles of the various rotating airflow channels 1026 contained within the same concentric annular region... When they are not exactly the same, the angles of the above-mentioned concentric annular regions... When comparing, the angles in each concentric annular region The angle of each rotating airflow channel 1026 in their respective concentric annular regions The average value. Similarly, the angle The design is similar, so I won't go into details here.

[0080] In the reaction chamber 200, the support disk 201 is normally rotating. This rotation causes the flow field near the edge of the support disk 201 to have not only the flow velocity along the main axis of the reaction chamber 200, but also a tangential flow velocity formed by the drag of the support disk 201. The tangential flow velocity increases the total velocity of the airflow in the edge flow field. Especially when the tangential flow velocity is large, vortices will be generated in the flow field in the direction of incoming flow in the edge region of the support disk 201, and the faster the rotation speed of the support disk 201, the easier it is to generate vortices. In particular, the support disk 201 will generate obvious vortices when rotating at high speed. Since the rotating airflow injected by the gas injection mechanism 100 of the present invention has tangential velocity and momentum at the periphery, and the rotation direction of the rotating airflow is consistent with the rotation direction of the support disk 201, the relative velocity of the airflow coming from the edge and the airflow injected from the inside to the edge of the support disk (and dragged by the support disk) can be reduced. The flow impact mixing and streamline turning process in the edge region is smoother, thereby suppressing or completely eliminating the generation of vortices. The second gas delivery channel 1020 is distributed along multiple concentric circles in the second gas injection mechanism 102, which can better adjust the distribution of the rotating flow field and make the rotating airflow better connected with the airflow in the internal region.

[0081] The above description of the gas injection mechanism is based on an example of a vertical flow chamber with the gas injection mechanism located at the top and the support plate located at the bottom. It should be understood that the gas injection mechanism provided by this invention can be used in any type of reaction chamber, as long as vortices may be generated due to the rotation of the support plate, to suppress or completely eliminate vortices and balance the airflow.

[0082] Example 2

[0083] This embodiment provides a gas injection mechanism, the similarities of which with Embodiment 1 will not be repeated, the difference lies in the second gas injection mechanism of the gas injection mechanism 100, therefore, in this embodiment, as Figure 8As shown, only the second gas injection mechanism 102' is shown, which also has several second gas delivery channels 1020'. The distribution of these second gas delivery channels 1020' in the second gas injection mechanism 102' is the same as that in Embodiment 1. Furthermore, the second gas delivery channel 1020' in this embodiment also includes a rotating airflow channel 1026', which includes a tubular channel 1026'-2 and a conical channel 1026'-1. The apex of the conical channel 1026'-1 communicates with the tubular channel 1026'-2, and the bottom of the conical channel 1026'-1 is the outlet surface. This outlet surface is non-circular, and can be, for example, elliptical, rhomboid, rectangular, triangular, semi-circular, or polygonal. Preferably, as... Figure 10 As shown, the base of the conical channel 1026'-1 is elliptical. Similarly, the tangent plane about the principal axis B, passing through the centroid O of the base of the conical channel 1026'-1, is defined as the tangent plane containing the centroid O of the base of the conical channel 1026'-1. The projection of the conical axis of the conical channel 1026'-1 onto the tangent plane containing the centroid O of the base forms an angle with the principal axis B. The projection of the tube axis of the tubular channel 1026'-2, which communicates with the conical channel 1026'-1, onto the tangent plane containing the centroid O of the bottom surface of the conical channel 1026'-1, forms an angle with the principal axis B. And angle and angle At least one of them is not 0. The difference is that: the vertical plane where the cone axis of at least part of the rotating airflow channel 1026' is located has an angle θ1 between it and the tangential plane where the centroid of the bottom surface of the cone-shaped channel 1026'-1 is located, and the vertical plane where the tube axis is located has an angle θ2 between it and the tangential plane where the centroid of the bottom surface of the cone-shaped channel 1026'-1 is located, and at least one of angles θ1 and θ2 is not 0, thereby making the airflow velocity of the gas ejected from at least part of the rotating airflow channel 1026' include a tangential component, an axial component and a radial component.

[0084] like Figure 9 As shown, it illustrates Figure 8A magnified view of the portion within the circle P. Here, the centroid of the base of the conical channel 1026'-1 is defined as point O, the apex as point O1, the endpoint of the tube axis of the tubular channel 1026'-2 at the connection point between the tubular channel 1026'-2 and the conical channel 1026'-1 is point O2, and the geometric center of the tubular channel 1026'-2 at one end of the second side 1025 of the second gas injection mechanism 1026' is point O3; that is, the line connecting points O and O1 is the conical axis OO1 of the conical channel 1026'-1, and the line connecting points O2 and O3 is the tube axis of the tubular channel 1026'-1. For the tube axis O2O3 of 6'-2, the tangent plane at point O about the principal axis B is the tangent plane P1 at point O, which is the plane intersected by the tangent line at point O (the tangent line at point O about the principal axis B) and the axial line at point O (the straight line passing through point O and parallel to the principal axis B). The plane intersected by the conical axis OO1 and the axial line at point O is the perpendicular plane P2 of the conical axis. The plane passing through point O2 and parallel to the tangent plane P1 is defined as P3. The plane intersected by the tube axis O2O3 and the axial line at point O2 (the straight line passing through point O2 and parallel to the principal axis B) is the perpendicular plane P4 of the tube axis. Similarly... Figure 9 As shown, the tangent plane P1 at point O forms an angle θ1 with the cone axis perpendicular plane P2, and the tube axis perpendicular plane P4 forms an angle θ2 with the plane P3, and at least one of angles θ1 and θ2 is not equal to 0°. For example, if θ1 = 0° and θ2 = 0°, the structure is as shown in Example 1. Figure 7 The rotating airflow channel 1026 shown (where both its cone axis and tube axis are located on the tangential plane of the centroid O point on the bottom surface, the airflow velocity of the ejected gas includes only the tangential component and the axial component).

[0085] Preferably, angles θ1 and θ2 are of the same size, and the vertical plane containing the cone axis and the vertical plane containing the tube axis are in the same direction of deviation relative to the tangent plane containing the centroid of the bottom surface of the cone-shaped channel 1026'-1.

[0086] The ratio of the radial component to the axial component of the rotating airflow velocity should not be too large, otherwise it will have a significant impact on the airflow in the internal region, which is not conducive to the balanced injection of gas into the reaction chamber 200. Preferably, 0°≤θ1≤30°, 0°≤θ2≤30°.

[0087] Thus, the structure of the resulting rotating airflow channel 1026' is as follows: Figure 10 As shown, the tubular channel 1026'-2 and / or the conical channel 1026'-1 are skewed relative to the tangent plane of the bottom centroid of the conical channel 1026'-1 about the main axis B (the plane formed by the tangent line and the axial line at that point).

[0088] The gas velocity injected by the rotating airflow channel 1026' in this embodiment includes not only axial and tangential components, but also radial components. For reaction chambers with different structural proportions and usage scenarios, introducing the rotating airflow with radial components can further reduce eddies.

[0089] Example 3

[0090] This embodiment provides a gas injection mechanism. The second gas injection mechanism 102 in this embodiment includes a plurality of second gas delivery channels 1020. The second gas delivery channels 1020 can all be the rotating airflow channels 1026 in Embodiment 1, all be the rotating airflow channels 1026' in Embodiment 2, a combination of a vertical airflow channel and the rotating airflow channels 1026 in Embodiment 1, a combination of a vertical airflow channel and the rotating airflow channels 1026' in Embodiment 2, or a combination of a vertical airflow channel, the rotating airflow channels 1026 in Embodiment 1, and the rotating airflow channels 1026' in Embodiment 2. The specific type of the second gas delivery channel 1020 can be determined according to different gas-phase reaction devices, application scenarios, and process requirements.

[0091] Example 4

[0092] This embodiment provides a gas injection mechanism. The second gas injection mechanism 102 in this embodiment includes a plurality of second gas delivery channels 1020. The structure of the second gas delivery channels 1020 can be any one of the embodiments one to three, and the distribution of each second gas delivery channel 1020 is the same as that in embodiment one.

[0093] In this embodiment, the second gas delivered by the second gas injection mechanism 102 comes from the same gas supply end, and the gas delivered by the second gas injection mechanism 102 is uniformly regulated.

[0094] like Figure 1 As shown, the second gas injection mechanism 102, located in the outer region of the gas injection mechanism 100, receives the same gas from the gas supply end 300. Therefore, the type and composition of the second gas delivered to the reaction chamber 200 by each second gas delivery channel 1020 are the same. It should be noted that the aforementioned "same gas" does not refer to a single gas type, but rather to the same gas delivered to the reaction chamber 200 by each second gas delivery channel 1020. This gas can be a single gas or a mixture of gases. For example, for III-V MOCVD, the second gas can be a group V hydride source gas and carrier gas, or a purge gas.

[0095] A control unit (not shown) is also provided between the gas supply end 300 and the second gas injection mechanism 102, such as a valve, mass flow controller, pressure controller, etc. The control unit uniformly regulates the gas in the second gas injection mechanism 102, thereby ensuring that the types and components of the gas delivered in the second gas injection mechanism 102 are the same.

[0096] Example 5

[0097] This embodiment provides a gas injection mechanism, which differs from Embodiment 4 in that: in Embodiment 4, the second gas delivered by the second gas injection mechanism 102 comes from the same gas supply end 300, and the gas delivered by the second gas injection mechanism 102 is uniformly regulated, while in this embodiment, the second gas injection mechanism 102 is divided into multiple independent sub-regions, and the second gas delivered in at least two sub-regions is independently regulated.

[0098] like Figure 11 The diagram shown is a top-view structural schematic of the second gas injection mechanism 102", which also has several second gas delivery channels 1020. In this embodiment, the second gas injection mechanism 102" is divided into multiple independent sub-regions by at least one separator 103.

[0099] In an optional embodiment, the reaction chamber 200 is provided with a top plate (not shown), which covers the second side 1025 of the second gas injection mechanism 102". The top plate is provided with a plurality of isolation members 103. The isolation members 103 can be ridges protruding from the top plate toward the second side 1025 of the second gas injection mechanism 102". The isolation members 103 are located between the second side 1025 of the second gas injection mechanism 102" and the top plate. When the top plate is installed on the second side 1025 of the second gas injection mechanism 102", the isolation members 103 divide the second gas delivery channel 1020" in the second gas injection mechanism 102" into multiple sub-regions.

[0100] In optional embodiments, such as Figure 11 As shown, the isolator 103 can be formed as a ridge protruding from the second side 1025 of the second gas injection mechanism 102” toward the top plate. The isolator 103 is located between the second side 1025 of the second gas injection mechanism 102” and the top plate. When the top plate is mounted on the second side 1025 of the second gas injection mechanism 102”, the isolator 103 divides the second gas delivery channel 1020” in the second gas injection mechanism 102” into multiple sub-regions.

[0101] like Figure 11As shown, the isolator 103 can be distributed circumferentially along the circumference of the second gas injection mechanism 102", dividing the second gas injection mechanism 102" into at least two concentric annular sub-regions. Preferably, the flow rate of the gas introduced into the outermost sub-region is adjusted to be not less than the flow rate of the gas introduced into the innermost sub-region; or the average molecular weight of the gas introduced into the outermost sub-region is adjusted to be not less than the average molecular weight of the gas introduced into the innermost sub-region; or the flow rate of the gas introduced into the outermost sub-region is adjusted to be not less than the flow rate of the gas introduced into the innermost sub-region, and the average molecular weight of the gas introduced into the outermost sub-region is not less than the average molecular weight of the gas introduced into the innermost sub-region. Preferably, from the innermost sub-region to the outermost sub-region, the flow rate of the introduced gas is gradually increased; or the average molecular weight of the introduced gas is gradually increased; or both the flow rate and the average molecular weight of the introduced gas are gradually increased. Preferably, from the innermost sub-region to the outermost sub-region, the flow rate of the introduced gas is gradually increased, and the gas flow rates in at least two adjacent sub-regions are the same; or the average molecular weight of the introduced gas is gradually increased, and the average molecular weight of the gas in at least two adjacent sub-regions is the same; or both the flow rate and the average molecular weight of the introduced gas are gradually increased, and the gas flow rates and the average molecular weight of the gas in at least two adjacent sub-regions are the same.

[0102] Alternatively, the separator 103 extends along the direction from the center to the edge of the gas injection mechanism 100 and is formed in the second gas injection mechanism 102”, dividing the second gas injection mechanism 102” into at least two fan-shaped sub-regions. Preferably, the areas of the at least two fan-shaped sub-regions are the same.

[0103] In this embodiment, taking the disc-shaped gas injection mechanism 100 in the circular reaction chamber 200 as an example, and the isolation member 103 being distributed in a circular form along the circumference of the second gas injection mechanism 102” as an example, such as... Figure 11As shown, taking a device with two isolation members 103 as an example, these two isolation members 103 and the sidewall of the second gas injection mechanism 102" divide the second gas injection mechanism 102" into three sub-regions: a first sub-region 1021 located radially innermost, a second sub-region 1022 located outside the first sub-region 1021, and a third sub-region 1023 located radially outermost. In an optional embodiment, the first sub-region 1021, the second sub-region 1022, and the third sub-region 1023 are respectively connected to an independent gas supply end 300. For example, the gas supply end 300 includes several different gas sources, and each sub-region is connected to several different gas sources. A control unit (not shown), such as a valve, mass flow controller, or pressure controller, is provided between the gas sources and each sub-region. The control unit independently controls the gas entering the tubular channel in each sub-region, allowing the composition and flow rate of the gas entering the first sub-region 1021, the second sub-region 1022, and the third sub-region 1023 to be the same or different. Furthermore, these parameters can be controlled independently, thus allowing for individual control of the flow rate or composition of the gas entering the first sub-region 1021, the second sub-region 1022, and the third sub-region 1023. This increases the controllability of the gas introduced into the reaction chamber 200 through the second gas injection mechanism, achieving a better effect of suppressing or completely eliminating vortex airflow in the reaction chamber.

[0104] In an optional embodiment, the first sub-region 1021 and the second sub-region 1022 are connected to the same gas source and controlled by the same control unit, while the third sub-region 1023 is connected to another gas source and controlled independently by another control unit. Other similar combinations exist, as long as they allow the gas in the sub-regions to be individually controlled, and will not be elaborated upon here.

[0105] like Figure 11 As shown, the flow rates of the second gas injected into the first sub-region 1021, the second sub-region 1022, and the third sub-region 1023 along the radial direction from the inside out are F1, F2, and F3, respectively, and the average molecular weights of the injected second gas are M1, M2, and M3, respectively. Each sub-region is independently controlled such that: F1≤F2≤F3, or M1≤M2≤M3, or F1≤F2≤F3 and M1≤M2≤M3.

[0106] Since the airflow in the reaction chamber 200 needs to be regulated and matched through fine distribution as it gets closer to the inner region, the design of the sub-region of the second gas injection mechanism can reduce the influence of the rotating airflow on the airflow in the inner region, which is conducive to the balanced injection of gas into the reaction chamber 200 and improves the utilization rate of gas.

[0107] Example 6

[0108] This embodiment provides a gas injection mechanism. The second gas injection mechanism 102 in this embodiment can be any one of embodiments one to five. The structure of the first gas delivery channel 1010 of the first gas injection mechanism 101 in this embodiment can also be a rotating airflow channel, or a combination of a vertical airflow channel (the airflow direction is perpendicular to the bearing plate) and a rotating airflow channel. The structure of the rotating airflow channel is the same as in embodiments one and two. The angle between the airflow direction formed by the first gas ejected from the first gas delivery channel and the main axis B is in the range of 0° to 90°.

[0109] Example 7

[0110] This embodiment provides a gas injection mechanism. The second gas injection mechanism 102 in the gas injection mechanism 100 of this embodiment can be any one of the embodiments one to five. The first gas injection mechanism 101 in the gas injection mechanism 100 of this embodiment is a horizontal flow center air intake device. At this time, the second gas injection mechanism 102 surrounds the center air intake device, and there is a certain interval distance between the second gas injection mechanism 102 and the center air intake device.

[0111] The angle between the airflow direction formed by the first gas ejected from the first gas delivery channel 1010 and the main axis B ranges from 0° to 90°. For example, if the outlet of the first gas delivery channel 1010 is located on the bottom surface of the central air intake device, the airflow ejected from the first gas delivery channel 1010 is perpendicular to the support plate 201, that is, the airflow direction is along the axial direction of the support plate 201; if the outlet of the first gas delivery channel 1010 is located on the side of the central air intake device and not facing the support plate 201, the first gas delivery channel 1010 can eject airflow radially along the support plate 201, or the first gas delivery channel 1010 can eject airflow in a direction with a certain angle to the axial direction of the support plate 201.

[0112] Example 8

[0113] This embodiment provides a gas phase reaction apparatus, which may be, for example, a gas phase deposition apparatus, specifically, a chemical vapor deposition apparatus, a physical vapor deposition apparatus, a plasma-enhanced vapor deposition apparatus, a metal-organic chemical vapor deposition (MOCVD) apparatus, etc.

[0114] For reference Figure 1 The gas-phase reaction apparatus includes a reaction chamber 200, a support plate 201, and a gas injection mechanism 100. The support plate 201 is disposed within the reaction chamber 200 and rotates during the gas-phase reaction at a speed greater than or equal to 200 RPM. The gas injection mechanism 100 is positioned opposite the support plate 201 to inject a reaction gas stream into the support plate 201. Figure 1 As shown, the gas-phase reaction apparatus of this embodiment has a reaction chamber 200. The cross-section of the reaction chamber 200 of the gas-phase reaction apparatus is generally circular or near-circular, or it can be rectangular or other structures known to those skilled in the art, which will not be described in detail here. The reaction chamber 200 can be a vertical flow chamber with vertical air intake, or it can be a horizontal flow chamber with central air intake.

[0115] The gas injection mechanism 100 in the reaction device can be any of the gas injection mechanisms 100 described in Embodiments 1 to 7. Therefore, the descriptions in Embodiments 1 to 7 can be referred to, and will not be repeated here.

[0116] Example 9

[0117] This embodiment provides a method for manufacturing a gas injection mechanism for a gas phase reaction device. The gas injection mechanism includes a first gas injection mechanism located in the middle region and a second gas injection mechanism located in the outer region and surrounding the first gas injection mechanism.

[0118] The first gas injection mechanism and the second gas injection mechanism can be machined on the same sheet metal, or they can be machined on different sheet metals respectively, and then assembled together to form a gas injection mechanism. Preferably, the first gas injection mechanism and the second gas injection mechanism are machined on different sheet metals, and then assembled together.

[0119] Taking the gas injection mechanism 100 in Embodiment 1 as an example, a first gas injection mechanism 101 and a second gas injection mechanism 102 are fabricated on different plates, and then the two are assembled together. The first gas injection mechanism 101 is fabricated using methods known in the art, which will not be described in detail here. The second gas injection mechanism 102 can be obtained through the following steps:

[0120] S1: Provide a main body with a certain thickness, the main body includes a first side and a second side arranged opposite to each other, the first side is configured as an air outlet side, and define a main axis that is perpendicular to the plane where the first side of the main body is located and passes through the geometric center of the gas injection mechanism;

[0121] For reference Figure 1 Define a main axis B that is perpendicular to the plane where the first side 1024 of the above-mentioned main body is located and passes through the geometric center of the gas injection mechanism 100 outlet surface;

[0122] S2: Along the direction in which the gas is ejected from the second gas injection mechanism to form a rotating airflow, and in the direction of rotation of the support plate located opposite the gas injection mechanism in the gas phase reaction device during the reaction process, a conical drill bit with a cone apex angle is used to chisel the main body from the first side along the first direction to obtain a plurality of cone-shaped channels, wherein the cone bottom of each cone-shaped channel is located on the first side, and the cone apex of each cone-shaped channel is located in the main body between the first side and the second side;

[0123] Using a conical drill bit with a cone apex angle, chisel the aforementioned body from the first side 1024, as follows: Figures 4 to 7 As shown, a plurality of cone-shaped channels 1026-1 are obtained, the bottom of each cone-shaped channel 1026-1 is located on the first side 1024, and the top of each cone-shaped channel 1026-1 is located in the main body between the first side 1024 and the second side 1025;

[0124] S3: Using a cylindrical drill bit with a diameter, chisel along the second direction from the top of each cone toward the second side, or from the second side toward the top of each cone, to obtain a plurality of tubular channels, wherein the tubular channels are connected one-to-one with the cone-shaped channels to form a plurality of second gas delivery channels that penetrate the body in the thickness direction.

[0125] like Figures 4 to 7 As shown, the tubular channel 1026-2 and the conical channel 1026-1 are connected in a one-to-one correspondence to form a plurality of second gas delivery channels 1020 that penetrate the body in the thickness direction;

[0126] Wherein, the tangent plane about the principal axis B, passing through the centroid O of the bottom surface of the conical channel 1026-1, is defined as the tangent plane containing the centroid O of the bottom surface of the conical channel 1026-1. In at least a portion of the second gas delivery channel 1020, such as Figure 6 As shown, the first direction causes the projection of the cone axis of each cone-shaped channel 1026-1 onto the tangent plane containing its centroid O point on its base to form an angle with the principal axis B. The second direction causes the projection of the tube axis of each tubular channel 1026-2 connected to each conical channel 1026-1 onto the tangent plane containing the centroid O of the bottom surface of the conical channel 1026-1 to form an angle with the principal axis B. horn and angle At least one of them is not 0, so that at least part of the second gas delivery channel 1020 forms a rotating airflow channel 1026.

[0127] In an optional embodiment, steps S2 and S3 above can be replaced by the following steps:

[0128] S2': Using a conical drill bit with a cone apex angle, a cone-shaped channel is obtained by chiseling the body from the first side along a first direction in the body, the bottom of the cone-shaped channel is located on the first side, and the apex of the cone-shaped channel is located in the body between the first side and the second side;

[0129] S3': Using a cylindrical drill bit with a diameter, chisel along the second direction from the top of the cone to the second side, or from the second side to the top of the cone, to obtain a tubular channel, the tubular channel being connected to the conical channel to form a second gas delivery channel penetrating the body in the thickness direction;

[0130] Following steps S2' and S3', step S4 is further included: repeating steps S2' and S3' along the direction in which the gas is ejected from the second gas injection mechanism to form a rotating airflow, which is consistent with the rotation direction of the support plate located in the gas phase reaction device and opposite to the gas injection mechanism during the reaction process, to form a plurality of second gas delivery channels.

[0131] Wherein, the tangent plane about the main axis B, passing through the centroid O of the bottom surface of the conical channel 1026-1, is defined as the tangent plane containing the centroid O of the bottom surface of the conical channel 1026-1. In at least a portion of the second gas conveying channel 1020, the first direction causes the projection of the conical axis of the conical channel 1026-1 onto the tangent plane containing its centroid O to form an angle with the main axis B. The second direction causes the projection of the tubular axis of the tubular channel 1026-2 onto the tangential plane containing the centroid O of the bottom surface of the conical channel 1026-1 to form an angle with the principal axis B. horn and angle At least one of them is not zero, thereby causing at least a portion of the second gas delivery channel 1020 to form a rotating airflow channel. The arrangement of the rotating airflow channel 1026 on the first side 1024 of the main body is such that when gas is ejected from the rotating airflow channel 1026, a rotating airflow is formed, the direction of which is consistent with the rotation direction of the support plate 201 located opposite to the gas injection mechanism 101 in the gas phase reaction device during the reaction process. The specific structural features of the above-mentioned rotating airflow channel 1026 can be described in conjunction with the description of Embodiment 1.

[0132] For reference Figure 8 and Figure 9As shown, in another optional embodiment, a second gas delivery channel 1020' is formed in the aforementioned main body in the same manner to form a second gas injection mechanism 102'. When the main body is excavated to form a rotating airflow channel 1026', at least a portion of the rotating airflow channel 1026's cone-shaped channel 1026's cone axis has an angle between its projection on the tangent plane of the centroid O point of the bottom surface of the cone-shaped channel 1026'-1 and the main axis B. The projection of the tube axis onto the tangent plane containing the centroid O of the bottom surface of the conical channel 1026'-1 forms an angle with the principal axis B. and At least one of them is not 0, thus forming a rotating airflow channel. Furthermore, the first direction in which the conical channel 1026'-1 is excavated forms an angle θ1 between the vertical plane containing the conical axis of at least a portion of the rotating airflow channel 1026' and the tangential plane containing the centroid O point of the bottom surface of the conical channel 1026'-1; the second direction in which the tubular channel 1026'-2 is excavated forms an angle θ2 between the vertical plane containing the tubular axis and the tangential plane containing the centroid O point of the bottom surface of the conical channel 1026'-1, and at least one of θ1 and θ2 is not 0. The specific structure of this rotating airflow channel 1026' can be found in the detailed description of Embodiment Two.

[0133] In this embodiment, the main body can also be excavated to form a vertical airflow channel parallel to the main axis B. That is, the second gas injection mechanism may include the vertical airflow channel and the rotating airflow channel 1026 in Embodiment 1, or it may include the vertical airflow channel and the rotating airflow channel 1026' in Embodiment 2, or it may include the vertical airflow channel and the rotating airflow channel 1026 in Embodiment 1 and the rotating airflow channel 1026' in Embodiment 2. The gas injection mechanism manufactured by the above method can effectively suppress or completely eliminate the generation of vortices in the reaction chamber, making the laminar flow characteristics of the reaction chamber flow field more stable.

[0134] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A method for manufacturing a gas injection mechanism, the gas injection mechanism being used in a gas-phase reaction apparatus, the gas injection mechanism comprising a first gas injection mechanism located in a central region, and a second gas injection mechanism located in a peripheral region and surrounding the first gas injection mechanism, characterized in that, The gas-phase reaction device includes at least one isolator that divides the second gas injection mechanism into multiple independent sub-regions. The isolator is distributed circumferentially along the circumference of the second gas injection mechanism, or the isolator extends from the center to the edge of the gas injection mechanism and is formed in the second gas injection mechanism. The method for manufacturing the second gas injection mechanism includes the following steps: S1: Provide a main body with a certain thickness, the main body includes a first side and a second side arranged opposite to each other, the first side is configured as an air outlet side, and define a main axis that is perpendicular to the plane where the first side of the main body is located and passes through the geometric center of the air outlet surface of the gas injection mechanism; S2: Along the direction in which the gas is ejected from the second gas injection mechanism to form a rotating airflow, and in the direction of rotation of the support plate located opposite the gas injection mechanism in the gas phase reaction device during the reaction process, a conical drill bit with a cone apex angle is used to chisel the main body from the first side along the first direction to obtain a plurality of cone-shaped channels, wherein the bottom of each cone-shaped channel is located on the first side, and the apex of each cone-shaped channel is located in the main body between the first side and the second side; S3: Using a cylindrical drill bit with a diameter, chisel along the second direction from the top of each cone toward the second side, or from the second side toward the top of each cone, to obtain a plurality of tubular channels, wherein the tubular channels are connected one-to-one with the cone-shaped channels to form a plurality of second gas delivery channels that penetrate the body in the thickness direction. Wherein, the tangent plane about the principal axis passing through the centroid O of the bottom surface of the conical channel is defined as the tangent plane containing the centroid O of the bottom surface of the conical channel. In at least a portion of the second gas delivery channel, the first direction causes the projection of the conical axis of the conical channel onto the tangent plane containing its centroid O to form an angle with the principal axis. The second direction causes the projection of the tubular channel's axis onto the tangent plane containing the centroid O of the bottom surface of the conical channel to form an angle with the principal axis. The angle and angle At least one of them is not 0, thereby causing at least a portion of the second gas delivery channel to form a rotating airflow channel.

2. The method for manufacturing the gas injection mechanism according to claim 1, characterized in that, In at least a portion of the second gas delivery channel, the first direction further forms an angle θ1 between the vertical plane containing the cone axis of the rotating airflow channel and the tangent plane containing the centroid of the bottom surface of the conical channel, and the second direction further forms an angle θ2 between the vertical plane containing the tube axis and the tangent plane containing the centroid of the bottom surface of the conical channel, wherein at least one of the angles θ1 and θ2 is not 0, wherein: the straight line passing through the centroid O point of the bottom surface of the conical channel and parallel to the main axis is defined as the axial line of point O; the straight line passing through the endpoint O2 point of the tube axis at the connection between the tube channel and the conical channel and parallel to the main axis is defined as the axial line of point O2; the vertical plane containing the cone axis is the plane intersected by the axial line of the cone axis and the axial line of point O; and the vertical plane containing the tube axis is the plane intersected by the axial line of the tube axis and the axial line of point O2.

3. The method for manufacturing the gas injection mechanism according to claim 1, characterized in that: Define a main axis, which is perpendicular to the plane containing the first side of the main body and passes through the geometric center of the gas injection mechanism. The method for manufacturing the gas injection mechanism further includes: A vertical airflow channel parallel to the main axis is formed by excavating the main body, so that the second gas injection mechanism includes the vertical airflow channel.

4. The method for manufacturing the gas injection mechanism according to claim 1, characterized in that, The first gas injection mechanism and the second gas injection mechanism are machined on the same sheet material, or the first gas injection mechanism and the second gas injection mechanism are machined on different sheet materials respectively.

5. The method for manufacturing the gas injection mechanism according to claim 1, characterized in that, The gas-phase reaction device has a reaction chamber, the reaction chamber is provided with a top plate, and the top plate is provided with a plurality of the aforementioned isolation components.

6. The method for manufacturing the gas injection mechanism according to claim 5, characterized in that, The isolation element is a ridge that protrudes from the top plate toward the second side of the second gas injection mechanism.

7. The method for manufacturing the gas injection mechanism according to claim 1, characterized in that, The gas phase reaction device has a reaction chamber with a top plate, and the isolation member is formed as a ridge protruding from the second side of the second gas injection mechanism toward the top plate.

8. The method for manufacturing the gas injection mechanism according to claim 1, characterized in that, When the isolators are distributed in a circumferential manner along the circumference of the second gas injection mechanism, the isolators divide the second gas injection mechanism into at least two concentric annular sub-regions.

9. The method for manufacturing the gas injection mechanism according to claim 1, characterized in that, When the isolator extends along the direction from the center to the edge of the gas injection mechanism and is formed in the second gas injection mechanism, the isolator divides the second gas injection mechanism into at least two fan-shaped sub-regions.

10. The method for manufacturing the gas injection mechanism according to claim 9, characterized in that, At least two of the said fan-shaped sub-regions have the same area.

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