Ceramic base

Abstract

The present invention provides a ceramic base. The ceramic base of an embodiment of the present invention includes a ceramic plate configured with a high-frequency electrode, the ceramic plate includes a connector connected to the high-frequency electrode, and includes an electrode rod whose one end is connected to the connector and is used to supply power to the high-frequency electrode. The electrode rod uses Mo, W or its alloy as a base material, and includes an AlCrN film on the surface of the base material.

Description

Technical Field

[0001] The present invention relates to a ceramic susceptor, and more particularly, to a ceramic susceptor using a material of a high-frequency electrode rod (RF rod) for reducing impedance in a ceramic susceptor based on ceramics such as AlN. Background Art

[0002] Typically, a semiconductor device or display device is manufactured by stacking a plurality of thin film layers including a dielectric layer and a metal layer in sequence on a glass substrate, a flexible substrate or a semiconductor wafer substrate, and then patterning the layers. These thin film layers are deposited on the substrate in sequence by a chemical vapor deposition (CVD) process or a physical vapor deposition (PVD) process. The CVD process includes a low pressure chemical vapor deposition (LPCVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, an organic metal chemical vapor deposition (MOCVD) process, etc. A ceramic base is configured in this CVD device and a PVD device, and the ceramic base is used to support a glass substrate, a flexible substrate, a semiconductor wafer substrate, etc., and to generate a specified amount of heat or to generate a high frequency signal for generating plasma. In order to realize precision processes such as fine wiring of semiconductor devices, the ceramic base is widely used in processes such as plasma deposition according to the requirements of precise temperature control and heat treatment, and is used for forming plasma or heating the substrate in the etching process of the thin film layer formed on the semiconductor wafer substrate or the firing process of the photoresist.

[0003] Figure 1 This is a diagram for explaining the electrode portion of a ceramic base in the prior art. Figure 1The prior art ceramic base has an electrode portion in the center of the ceramic plate 10 for connecting to external high-frequency electrode rods (RF rods) 31 and 32. The high-frequency electrode mesh (RF mesh) 11 is embedded in the ceramic plate 10 in a circular or half-moon shape. In addition, the connector 12, which serves as an electrode base material for electrical connection, is embedded in the high-frequency electrode mesh 11. The eyelet-shaped support body 20 is screwed via a thread formed in the opening portion, and the upper end electrode rod 31 and the lower end electrode rod 32, as well as the lower end electrode rod 32 and the connector 12, are joined by brazing, thereby electrically connecting the electrode rods 31 and 32 for power supply to the high-frequency electrode mesh 11. In the prior art ceramic base described above, the gap between the support body 20 and the lower end electrode rod 32, or the gap between the support body 20 and the ceramic plate 10, forms a path for oxygen to penetrate in a high-temperature atmosphere, thereby oxidizing the brazing material formed at the interface between the connector 12, which serves as the electrode base material, and the lower end electrode rod 32. Oxygen permeation can also cause the brazing filler metal formed at the interface between the upper electrode rod 31 and the lower electrode rod 32 to oxidize. This oxidation can reduce electrical conductivity and power transmission efficiency, potentially lowering the reliability of the electrode unit and shortening the life of the ceramic base.

[0004] In order to overcome this reliability problem, the electrode rods of the prior art mainly use heat-resistant or oxidation-resistant materials, such as Ni or Ni alloy materials. Since the Ni material suitable for the electrode rods of the prior art is a ferromagnetic material, there is a problem that when used as a power transmission line in the high-frequency region, the skin depth of the line where electrons move is small due to the skin effect, making it difficult for electrons to move, thereby increasing impedance and generating heat. In addition, since the working conditions of the ceramic base used in semiconductor processes require higher plasma characteristics at high temperatures, high power and high frequency must be applied. Therefore, the materials such as nickel Ni in the electrode structure of the ceramic base of the prior art have a greater skin effect due to the inherent magnetic properties of the material (ferromagnetic body), and thus the problem of short circuit caused by oxidation as described above frequently occurs.

[0005] To improve this, existing technologies, such as Korean Patent Publication No. 10-2018-0121662 (published on November 7, 2018), coat Ni or Ti rod base materials with Au, Ag, Al, or Cu, or, as in Korean Patent Publication No. 10-2021-0139368 (published on November 22, 2021), coat Mo, Ni, or Ti rod base materials with an aluminum oxide film to reduce heat generation or conduction. However, even in these cases, the problem of increasing impedance of the electrode rod material with increasing frequency during power transmission in the high-frequency range has not been fundamentally solved. Summary of the Invention

[0006] Technical problems to be solved

[0007] The inventors of the present invention have determined that Ni or Ni alloy materials, as ferromagnetic materials, have a high relative magnetic permeability (<600). Therefore, when used as radio frequency (RF) rods, the skin effect causes the skin depth within the high-frequency electrode rod to become extremely small as power and frequency increase, making it difficult for electrons to move, ultimately leading to increased impedance. This increase in electrode rod impedance not only causes the electrical energy that would otherwise be consumed in plasma discharge to be converted into heat energy at the electrode rod end, thereby reducing plasma efficiency, but also creates a hot-spot zone on the end surface of the ceramic plate supporting the substrate, resulting in uneven thickness and film quality of the thin film deposited on the substrate, which may be a factor in reducing yield. In addition, as the temperature of the ceramic part that is connected to the part where the electrode rod is fastened rises sharply locally, the destruction of the ceramic base and the damage to the brazing joint caused by thermal shock become the decisive factors for the generation of arc. Therefore, in order to improve the yield of semiconductor devices and improve the durability of the ceramic base, the impedance problem of the electrode rod must be solved.

[0008] Therefore, the object of the present invention is to provide a ceramic base suitable for an electrode rod structure. As the material of the electrode rod suitable for the ceramic base, it has all the thermal properties, electrical (magnetic) properties, and mechanical properties required in the manufacturing and processing environment of the ceramic base, and can prevent oxidation even in an antioxidant and corrosion-resistant environment, thereby preventing short circuits, and selects materials with low specific resistance and specific magnetic permeability, so as to have low impedance and good high-frequency transmission characteristics.

[0009] Means used to solve problems

[0010] First, summarizing the features of the present invention, a ceramic base according to one embodiment of the present invention for achieving the above-mentioned purpose includes a ceramic plate provided with a high-frequency electrode, the ceramic plate including a connector connected to the high-frequency electrode, and an electrode rod having one end connected to the connector and used to supply power to the high-frequency electrode, the electrode rod using Mo, W or an alloy thereof as a base material, and including a metal nitride film containing Cr on the surface of the base material.

[0011] The metal nitride film may include AlCrN.

[0012] The ceramic base may further include a CrN base layer between the base material and the metal nitride film.

[0013] The thickness of the CrN base layer may be 0.1 to 4.0 μm.

[0014] The thickness of the metal nitride film may be 1.0 to 10.0 μm.

[0015] The metal nitride film can be coated by physical vapor deposition (PVD).

[0016] Effects of the Invention

[0017] According to the ceramic base of the present invention, a ceramic base can be provided as an optimal material with low impedance and practicality. By applying materials such as Mo and W to the high-frequency electrode rod, an AlCrN or CrN / AlCrN coating film is formed and applied to cope with oxidation (corrosion). Therefore, it is possible to prevent oxidation even in an antioxidant and corrosion-resistant environment, thereby preventing short circuits. In addition, based on materials such as Mo and W with low specific resistivity and specific magnetic permeability, an electrode rod structure with low impedance and good high-frequency transmission characteristics is realized. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] To help understanding of the present invention, the accompanying drawings, which are included as a part of the detailed description, provide embodiments of the present invention and, together with the detailed description, explain the technical concept of the present invention.

[0019] Figure 1 It is a diagram for explaining an electrode portion of a ceramic base in the related art.

[0020] Figure 2 It is a cross-sectional view for explaining the structure of a ceramic base according to one embodiment of the present invention.

[0021] Figure 3 This is a flowchart for explaining a process for forming a coating on an electrode rod of a ceramic base according to an embodiment of the present invention.

[0022] Figure 4 This is a graph for comparing the RF power loss rates when Ni of the conventional technology is applied as the material of the electrode rod of the ceramic base and when Mo / nitride film-Mo and W / nitride film-W of the present invention are applied.

[0023] Figure 5A 、 Figure 5B The electrode rod of the present invention having a CrN base layer and an AlCrN layer on its surface before oxidation ( Figure 5A ) and after ( Figure 5B ) cross-sectional photograph.

[0024] Figure 6A 、 Figure 6BThis is the case where the electrode rod of the present invention does not have a CrN base layer ( Figure 6A ) and the case with CrN base layer ( Figure 6B ) surface SEM photograph.

[0025] Description of Reference Numerals

[0026] 100: Ceramic base; 110: Ceramic plate 110; 111: High-frequency electrode; 120: Support hole; 130: Electrode rod; 140: Metal nitride film DETAILED DESCRIPTION

[0027] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. At this time, the same components in each drawing are represented by the same figure marks as much as possible. In addition, the description of known functions and / or structures will be omitted. The content disclosed below will mainly describe the parts required to understand the operation of various embodiments, and the description of elements that may make the gist of the description unclear will be omitted. In addition, some of the components in the drawings may be enlarged, omitted or shown schematically. The size of each component cannot fully reflect the actual size, and therefore, the content described here is not limited by the relative size or spacing of the components shown in each drawing.

[0028] When describing the embodiments of the present invention, if it is judged that the specific description of the known technology related to the present invention will unnecessarily obscure the gist of the present invention, its detailed description will be omitted. In addition, the terms described below are terms defined in consideration of the functions of the present invention, and may vary according to the intention or convention of the user or operator. Therefore, their definitions should be interpreted based on the content of the entire specification. The terms used in this specification are only used to illustrate the embodiments of the present invention and are not intended to be limiting. Unless otherwise specified, expressions in the singular should include expressions in the plural. Expressions such as "including" or "having" in this specification are used to refer to any feature, number, step, action, element or combination thereof, and should not be understood as excluding the existence or additional possibility of one or more other features, numbers, steps, actions, elements or combinations thereof.

[0029] In addition, although the terms "first" and "second" may be used to describe various components, the components are not limited by the terms. The terms are only used to distinguish one component from another.

[0030] Figure 2 1 is a diagram for explaining the structure of a ceramic susceptor 100 according to an embodiment of the present invention.

[0031] Reference Figure 2According to an embodiment of the present invention, a ceramic base 100 includes: a ceramic plate 110 including a high-frequency electrode 111 and an electrode rod portion 150; and an electrode rod 130 fastened to an opening portion 190 of the electrode rod portion 150, namely a first rod 131 and a second rod 132. In addition, the ceramic base 100 may include a support eyelet 120 coupled to the electrode rod 130. The ceramic plate 110 includes a high-frequency electrode 111 embedded in a ceramic material. The electrode rod 130 is a component for supplying power (e.g., radio frequency (RF) power) to the high-frequency electrode 111, and is coupled to the support eyelet 120 fastened by a thread 191 of the ceramic plate 110.

[0032] The electrode rod portion 150 of the ceramic plate 110 includes a connector 112 at an opening 190 for connecting to the electrode rod 130, and further includes a thread 191 formed on a portion of the inner circumference of the opening 190. The support eyelet 120 coupled to the electrode rod 130 may have corresponding threads (e.g., external threads) on its outer circumference for fastening via the threads 191 (e.g., internal threads).

[0033] Alternatively, as described above, although not shown in the accompanying drawings, in the present invention, the ceramic plate 110 may include, in addition to the high-frequency electrode 111, a heating element (not shown) and a corresponding electrode rod for heating purposes between the ceramic materials. Therefore, while the present invention describes the structure of the electrode rod portion 150 of the high-frequency electrode 111, this structure can also be directly applied to the electrode rod portion connecting the heating element (not shown) and the corresponding electrode rod.

[0034] That is, the ceramic plate 110 can be constructed so that the high-frequency electrode 111 and / or the heating element (not shown) are arranged (buried) between the ceramic materials at a predetermined interval. The ceramic plate 110 can be constructed so that it can stably support the substrate to be processed while being able to achieve heating by the heating element (not shown) and / or plasma enhanced chemical vapor deposition process by the high-frequency electrode 111. The ceramic plate 110 can be a plate-like structure having a predetermined shape. As an example, the ceramic plate 110 can be formed into a circular plate-like structure, but is not limited thereto. The ceramic material can be Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, autoclaved lightweight concrete (AlC), TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, B x C yAt least one of BN, SiO2, SiC, yttrium aluminum garnet (YAG), mullite, and AlF3, preferably aluminum nitride (AlN). Furthermore, when forming the ceramic plate 110, yttrium oxide powder or magnesium oxide may be selectively included in an amount of 0.1% to 10%, preferably about 1% to 5%, along with the ceramic powder.

[0035] The connector 112 is embedded in the ceramic plate 110 to be electrically connected to the high-frequency electrode 111 and is partially exposed at the bottom surface of the opening 190. The end surface of the electrode rod 130 and the connector 112 are electrically connected by brazing.

[0036] The high-frequency electrode 111, the connector 112, the electrode rod 130, the support hole 120, the heating element (not shown), etc. can be made of conductive materials, for example, they can be made of tungsten (W), molybdenum (Mo), silver (Ag), copper (Cu), nickel (Ni), gold (Au), platinum (Pt), niobium (Nb), titanium (Ti) or their alloys.

[0037] In particular, in the present invention, the electrode rod 130 preferably has low resistance, i.e., low impedance, and is a paramagnetic material. For example, the base material of the electrode rod 130 can be composed of paramagnetic materials such as Mo, W, or an alloy containing one or more of Mo and W, rather than a ferromagnetic material such as nickel (Ni) as shown in Table 1. Furthermore, an anti-oxidation coating is provided on the surface of the electrode rod 130. In the present invention, the anti-oxidation coating preferably includes a metal nitride film containing Cr. For example, the metal nitride film includes an AlCrN film, and more preferably, its base layer may also include a CrN base layer.

[0038] Table 1

[0039] Material Resistivity (nΩ·m) Magnetic properties Ni 69.3 Strong magnetic material Mo 53.4 paramagnets W 52.8 paramagnets

[0040] Therefore, it is possible to provide a ceramic susceptor 100 that has all the thermal, electrical (magnetic), and mechanical properties required in the manufacturing and processing environment of the ceramic susceptor 100 and is also advantageous in terms of processability and material cost.

[0041] exist Figure 2In the embodiment, the electrode rod 130 includes a first rod 131 and a second rod 132, which are joined inside the support hole 120 and connected by brazing. The electrode rod 130 can also consist of a single rod with the first and second rods 131 and 132 integrated, or alternatively, a structure in which the first and second rods 131 and 132 are joined. One end surface of the first rod 131 is brazed to the connector 112 via a first conductive filler 151, while the second rod 132 is brazed to the other end surface of the first rod 131 via a second conductive filler 152. For example, conductive fillers 151 and 152 can be made of Au-Ni metal fillers or metal fillers containing Ti. The connector 112 can be made of molybdenum or a molybdenum alloy. Because the proximity of the first rod 131 to the high-frequency electrode 111 causes heat loss and thermal stress, it is preferable that the first rod 131 have a smaller thermal expansion coefficient than the second rod 132 to prevent heat loss and reduce cracks caused by thermal stress. In particular, in the present invention, the first rod 131 and the second rod 132 can be composed of Mo, W or an alloy containing one or more of Mo and W. In order to cope with oxidation (corrosion), a metal nitride film (for example, AlCrN layer) 140 can be included on the surface of the electrode rod 130, that is, a metal nitride film (for example, AlCrN layer) 141 is included on the surface of the first rod 131 and a metal nitride film (for example, AlCrN layer) 142 is included on the surface of the second rod 132.

[0042] To perform each of the brazing joints described above, first conductive filler 151 is pre-injected into the bottom surface of opening 190, i.e., around the exposed portion of connector 112. First rod 131 is then pushed into support hole 120, with one end surface of first rod 131 in close contact with connector 112. The brazing process is then heated to a high temperature and then cooled. Next, second conductive filler 152 is fully injected into the upper portion of the other end surface of first rod 131, with one end surface of second rod 132 in close contact with the injected second conductive filler 152. The process is then heated to a high temperature and then cooled.

[0043] By using the ceramic base 100 of an embodiment of the present invention as described above, power is supplied to the high-frequency electrode 111 through the connector 112 connected to the electrode rod 130, so that the heat (or high frequency) generated by the heating element (not shown) can be used to heat the processing object substrate (for example, a semiconductor chip, a glass substrate, a flexible substrate, etc.) in the semiconductor process, etc., and perform heat treatment (or plasma-enhanced chemical vapor deposition process) at a specified heating temperature.

[0044] In particular, the electrode rod 130 can be made of Mo, W, or an alloy containing one or more of these materials at a higher weight ratio (wt%) than other metal materials (e.g., MoW, MoNi, WNi, etc.). To combat oxidation (corrosion), a metal nitride film (e.g., an AlCrN layer) 140 is included on the surface of the electrode rod 130. This effectively prevents oxidation of the electrode rod 130 and eliminates the factor causing an increase in impedance due to use. By reducing changes such as an increase in the impedance of the electrode rod 130, energy loss converted into heat in the electrode rod 130 is eliminated, allowing electrical energy to be efficiently consumed during plasma discharge. Furthermore, by reducing the heat generated in the electrode rod 130, a hot-spot zone is prevented from forming on the upper surface of the ceramic plate 110 supporting the substrate. This improves the uniformity of the thickness and quality of the thin film deposited on the substrate and increases the yield rate. Furthermore, by eliminating temperature increases in the ceramic portion contacting the portion fastened to the electrode rod 130, damage to the ceramic base 100 due to thermal shock can be reduced, and arcing at the brazing joint can be reduced. Therefore, reducing impedance changes in the electrode rod 130 in the present invention can provide a ceramic base 100 with improved durability and contribute to increased semiconductor device yield.

[0045] Figure 3 This is a flowchart for explaining a process for forming a coating on an electrode rod of a ceramic base according to an embodiment of the present invention.

[0046] Reference Figure 3 To form a metal nitride film (e.g., an AlCrN layer) 140 on the surface of an electrode rod 130 made of Mo, W, or an alloy containing one or more of these, a physical vapor deposition (PVD) technique, such as arc ion plating, can be used. As shown in the figure, the electrode rod coating can be formed by a process including forming a CrN base layer 145 (step S110), a plasma pretreatment process (step S120), and then depositing the AlCrN metal nitride film (step S130).

[0047] In step S110, the CrN base layer 145 formation process is to reduce the internal stress of the metal nitride film (e.g., AlCrN layer) 140 and make it fit well. As the CrN base layer 145, the CrN layer can be deposited on the surface of the electrode rod 130 with a thickness of 0.1 to 4.0 μm. In the present invention, the CrN base layer 145 can be formed by arc ion plating. For example, in an arc ion plating device, as the CrN base layer 145, the CrN layer can be deposited on the surface of the electrode rod 130. At this time, a Cr target can be pre-loaded into the arc ion plating device, and while nitrogen is injected into the reactor, a CrN layer is formed on the surface of the electrode rod 130 by PVD under a specified vacuum degree. In the case where the electrode rod 130 is composed of a first rod 131 and a second rod 132, the CrN base layer 145 can be formed on the surface of each rod.

[0048] In the plasma pre-treatment process (step S120), the electrode rod 130 formed with the CrN base layer 145 is placed in the arc ion plating equipment. -5 Under a vacuum degree of less than 1000 Torr, the surface of the electrode rod 130 is cleaned by plasma pre-treatment, and the subsequent metal nitride film (eg, AlCrN layer) 140 is optimally coated.

[0049] In the AlCrN metal nitride film deposition process (step S130), the AlCr alloy target is pre-loaded into the arc ion plating equipment. After the plasma pretreatment process (step S120) is completed, nitrogen is injected into the reactor and the AlCrN metal nitride film is deposited by PVD at 1×10 -2 A metal nitride film (e.g., AlCrN layer) 140 is formed to a thickness of 1.0 to 10.0 μm under a vacuum of about 0.00 Torr. The AlCr alloy target may be an AlCr alloy target in which aluminum (Al) and chromium (Cr) are alloyed at a predetermined ratio (e.g., 7:3 wt%).

[0050] Figure 4 This is a graph for comparing the RF power loss rates when Ni of the conventional technology is applied as the material of the electrode rod of the ceramic base and when Mo / nitride film-Mo and W / nitride film-W of the present invention are applied.

[0051] like Figure 4As shown in the RF (Radio Frequency) power loss rate calculated based on measured impedance values, it was confirmed that, when compared with the loss rate of Ni as a benchmark, Mo, a nitride film-Mo with an AlCrN layer on its surface, and W, a nitride film-W with an AlCrN layer on its surface, had a loss rate reduced by approximately 40% compared to Ni. These results indicate that Mo and W, as well as nitride film-Mo and nitride film-W, are excellent candidates for replacing Ni in electrode rods.

[0052] Figure 5A 、 Figure 5B The electrode rod of the present invention has a CrN base layer 145 and an AlCrN layer on its surface before oxidation ( Figure 5A ) and after ( Figure 5B ) cross-sectional photograph.

[0053] Reference Figure 5A 、 Figure 5B It can be seen from the Energy Dispersive X-ray Spectroscopy (EDS) photograph of the electrode rod 130 of the present invention that under the action of the CrN base layer 145 and the AlCrN layer 140 coated on the surface of the Mo base material, before being oxidized at high temperature ( Figure 5A ) and after ( Figure 5B ), it can be seen that almost no oxide layer is formed above the lCrN layer 140, and it is confirmed that no cracks occur in the coating films such as the CrN base layer 145 and the AlCrN layer 140. In the present invention, a metal nitride film (e.g., an AlCrN layer) 140 is formed on the surface of the electrode rod 130 to inhibit oxidation (corrosion). The coating material applied to the electrode rod 130 base material composed of Mo, W, or an alloy containing one or more of Mo and W should be selected in consideration of not only thermal properties, electrical (magnetic) properties, and mechanical properties, but also price and coating workability, just as the electrode rod material. For example, it has been confirmed that the most effective way to prevent oxidation is when the CrN base layer 145 and the AlCrN layer 140 are applied by PVD (Physical Vapor Deposition) as the metal nitride film 140. On the other hand, TiAlN coating materials crack when used at high temperatures, making it difficult to protect the Mo or W base material.

[0054] Figure 6A 、 Figure 6B This is the case where the electrode rod of the present invention does not have the CrN base layer 145 ( Figure 6A ) and the case with CrN base layer 145 ( Figure 6B ) surface SEM photograph.

[0055] Reference Figure 6A 、 Figure 6B It can be seen from the SEM (Scanning Electron Microscope) photograph of the electrode rod 130 of the present invention that when the electrode rod 130 has the CrN base layer 145 ( Figure 6B ) and the case without CrN base layer 145 ( Figure 6A ), the diameter of the particles of the surface metal nitride film (eg, AlCrN layer) 140 is larger on average and is uniform, and it is confirmed that the oxidation prevention effect can be enhanced as described above and that it helps prevent cracks from occurring.

[0056] As described above, according to the ceramic base 100 of the present invention, a ceramic base can be provided as an optimal material with low impedance and practicality. By applying materials such as Mo and W to the high-frequency electrode rod 130, an AlCrN coating film 140 or a CrN / AlCrN coating film 145 / 140 is formed and applied to cope with oxidation (corrosion). Therefore, it is possible to prevent oxidation even in an antioxidant and corrosion-resistant environment, thereby preventing short circuits, and based on materials such as Mo and W with low specific resistivity and specific magnetic permeability, an electrode rod structure with low impedance and good high-frequency transmission characteristics is realized.

[0057] As described above, in the present invention, specific matters such as specific components and limited embodiments and drawings have been described, but these are provided only to facilitate understanding of the present invention as a whole, and the present invention is not limited to the embodiments. A person skilled in the art can make various modifications and changes without departing from the essential features of the present invention. Therefore, the gist of the present invention should not be limited to the described embodiments. In addition to the appended claims, all technical ideas that are equivalent to or equivalently modified to the appended claims should be interpreted as falling within the scope of the present invention.

Claims

1. A ceramic base comprising a ceramic plate provided with a high-frequency electrode made of a conductive material, wherein: The ceramic board includes a connector electrically connected to the high-frequency electrode, An electrode rod having one end electrically connected to the connector and used to supply power to the high-frequency electrode, The electrode rod uses paramagnetic Mo, W or an alloy containing one or more of Mo and W as the base material. An AlCrN film is included on the surface of the electrode rod.

2. The ceramic susceptor according to claim 1, wherein: A CrN base layer is further included between the base material and the AlCrN film.

3. The ceramic susceptor according to claim 2, wherein: The thickness of the CrN base layer is 0.1-4.0 μm.

4. The ceramic susceptor according to claim 1, wherein: The thickness of the AlCrN film is 1.0 to 10.0 μm.

5. The ceramic susceptor according to claim 1, wherein The AlCrN film is deposited by physical vapor deposition.

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