A gas supply system and a gas supply method thereof

Abstract

The application discloses a gas supply system and a gas supply method thereof, which are used for providing a reaction gas to a substrate processing chamber. The gas supply system comprises a bubbling chamber, a gas inlet pipeline, a gas outlet pipeline, a filter assembly and the like. By arranging the filter assembly between the gas outlet pipeline inlet and the precursor liquid surface, the splashed droplets and the supersaturated precursor vapor are filtered, and physically prevented from reaching the gas outlet pipeline inlet, so that the particle blocks the gas outlet pipeline inlet. The filter assembly also heats the adsorbed droplets or particles to generate corresponding gas, so as to realize automatic cleaning and prevent the gas passage from being blocked. The gas supply system and the gas supply method thereof solve the problem of the gas outlet pipeline inlet blockage caused by the droplet splashing and the supersaturated precursor vapor, have the automatic cleaning function, long service life, good effect, can stably and efficiently supply the gas to the corresponding substrate processing device, and improve the substrate processing rate and quality of the substrate processing device.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor equipment, and specifically relates to a gas supply system and a gas supply method thereof. Background Technology

[0002] In semiconductor manufacturing processes, reactive gases are typically used to treat substrates, such as chemical vapor deposition (CVD) and atomic layer deposition (ALD). These reactive gases react on and / or near the substrate surface to form coatings or nanomaterials. For transportation and storage efficiency, chemicals are usually supplied in liquid or solid form in industry; therefore, before treating the substrate with reactive gases, liquid or solid chemicals typically need to be converted into chemical gases to form the reactive gases used for substrate treatment.

[0003] Bubble vaporizers are widely used in semiconductor manufacturing equipment to supply reactive gases to substrates. They introduce an inert carrier gas into a bubble container containing liquid chemicals (i.e., liquid precursors) to promote the vaporization of the liquid chemicals. The bubbles of the carrier gas rise and pass through the surface of the liquid chemicals. The vapor generated by the vaporization of the liquid chemicals in the bubble container forms a mixed gas with the carrier gas. The mixed gas leaves the bubble container and is supplied to the substrate processing chamber for substrate processing.

[0004] For liquid chemicals, especially some high-viscosity liquid chemicals, bubbles formed by carrier gas are prone to bursting as they move from the bottom of the liquid to the surface, causing droplets to splash everywhere, even splashing onto the gas outlet of the foaming container, forming a particle source and clogging the gas outlet; and the supersaturated vapor generated in the foaming container can also easily condense into droplets at the gas outlet of the foaming container to form particles, and even the saturated vapor can reach the processing chamber and form particles on the substrate surface, contaminating the substrate. Summary of the Invention

[0005] This invention provides a gas supply system and gas supply method for supplying reactive gas to a substrate processing chamber. By setting a filter assembly between the inlet of the gas outlet pipe and the liquid surface of the precursor, splashing droplets and supersaturated precursor vapor in the mixed gas are filtered, physically preventing droplets and supersaturated precursor vapor from reaching the inlet of the gas outlet pipe and forming particles that block the inlet of the gas outlet pipe. In addition, the filter assembly also heats the droplets or particles it adsorbs to generate corresponding gases, realizing an automatic cleaning function and preventing it from adsorbing too many droplets to form a particle source or even block the gas passage.

[0006] The gas supply system provided by this invention is used to supply reactive gas to a substrate processing chamber, comprising:

[0007] The foaming chamber is used to store liquid precursors;

[0008] An air intake pipe is used to introduce carrier gas into the precursor for foaming, and the outlet of the air intake pipe is located below the liquid surface of the precursor.

[0009] An exhaust pipe is used to discharge the mixed gas formed by the carrier gas and the precursor in the foaming chamber; the inlet of the exhaust pipe is located above the liquid surface of the precursor.

[0010] A filter assembly is located between the inlet of the gas outlet pipe and the liquid surface of the precursor; the filter assembly is used to liquefy the supersaturated precursor vapor in the mixed gas, and the mixed gas enters the inlet of the gas outlet pipe after passing through the filter assembly.

[0011] Optionally, the filter assembly includes a porous region through which the mixed gas enters the inlet of the outlet pipe.

[0012] Optionally, the filter assembly further includes a temperature control element for cooling the temperature of the porous region to a first temperature capable of liquefying the supersaturated precursor vapor in the mixed gas.

[0013] Optionally, the temperature control element is further configured to heat the temperature of the porous region to a second temperature that allows the droplets adsorbed in the porous region to vaporize, the second temperature being lower than the decomposition temperature of the precursor.

[0014] Optionally, the temperature control element is arranged around the outer edge of the porous region; or

[0015] The temperature control element is spirally coiled or concentrically arranged on the surface of the porous region; or

[0016] The temperature control elements are arranged in a cross or grid pattern on the surface of the porous area, or

[0017] The temperature control elements are arranged in parallel on the surface of the porous region.

[0018] Optionally, the temperature control element is a Peltier element, or a temperature control element based on a temperature-controllable fluid.

[0019] Optionally, the gas supply system further includes a temperature sensing element for monitoring the temperature of the porous region.

[0020] Optionally, the gas supply system further includes a temperature control device, which controls the temperature of the porous region based on the monitoring results of the temperature sensing element.

[0021] Optionally, the porous region is made of aluminum plated with nickel, pure nickel, Hastelloy, or stainless steel.

[0022] Optionally, the gas supply system includes multiple filtration components;

[0023] The multiple filter components are arranged in layers between the inlet of the gas outlet pipe and the liquid surface of the precursor.

[0024] Optionally, the filter assembly is disposed inside the bubble chamber, and the filter assembly is connected to the bubble chamber via an insulating component.

[0025] Optionally, the heat insulation component may be a plurality of supporting protrusions;

[0026] The plurality of supporting protrusions are distributed circumferentially along the inner wall of the foaming chamber to support the filter assembly.

[0027] Optionally, the filter assembly is a flange containing the porous region.

[0028] Optionally, the diameter of the pores in the porous region is on the order of hundreds of micrometers to millimeters.

[0029] Optionally, the substrate processing chamber uses the mixed gas for chemical vapor deposition.

[0030] Another technical solution of the present invention is to provide a gas supply method, applicable to any of the gas supply systems described above, comprising the following steps:

[0031] Carrier gas is introduced into the precursor through the air intake pipe to form the mixed gas;

[0032] The temperature of the porous region of the filter assembly is cooled to a first temperature that allows the supersaturated precursor vapor in the mixed gas to liquefy.

[0033] The mixed gas enters the inlet of the outlet pipe through the filter assembly and is then transported to the corresponding substrate processing chamber via the outlet pipe.

[0034] Optionally, the gas supply method further includes: heating the porous region to a second temperature capable of vaporizing droplets adsorbed in the porous region when no substrate processing is performed.

[0035] Compared with the prior art, the advantages or beneficial effects of the present invention are as follows:

[0036] The gas supply system and method provided by this invention include a filter assembly comprising a porous region and a temperature control element, disposed between the inlet of the gas outlet pipe and the liquid surface of the precursor. The temperature control element is used to regulate the temperature of the porous region, cooling or heating it. The temperature control element cools the porous region to a first temperature, causing the supersaturated precursor vapor in the mixed gas to partially liquefy as it passes through the porous region, thus returning it to a saturated state. Simultaneously, splashing droplets generated by bubble bursts or other reasons in the precursor are adsorbed onto the filter assembly as they pass through the porous region. The filter assembly filters the splashing droplets and the supersaturated precursor vapor in the mixed gas, physically preventing the droplets and supersaturated precursor vapor from reaching the inlet of the gas outlet pipe and forming particles that block the inlet. The temperature control element heats the porous region to a second temperature, causing the adsorbed droplets or particles in the porous region to vaporize and generate corresponding gas, thereby removing the droplets or particles from the porous region. This achieves an automatic cleaning function for the porous region, preventing the porous region itself from adsorbing too many droplets to form a particle source or even block the gas passage, effectively extending the service life of the filter assembly. The gas supply system and gas supply method provided by this invention solve the problem of blockage at the inlet of the gas outlet pipe caused by droplet splashing and supersaturated vapor of precursors. It also has an automatic cleaning function, long service life, and good effect. It can stably and efficiently supply gas to the corresponding substrate processing device, thereby improving the substrate processing rate and quality of the substrate processing device. Attached Figure Description

[0037] Figure 1 This is a schematic diagram of the gas supply system described in Embodiment 1 of the present invention;

[0038] Figure 2-7 This is a schematic diagram showing different arrangements of the temperature control element in the porous area in Embodiment 1;

[0039] Figure 8 This is a schematic diagram of the gas supply system with flanges as the filter components;

[0040] Figure 9 This is a schematic diagram of the structure of a flange containing the porous region;

[0041] Figure 10 This is a schematic diagram of the gas supply system described in Embodiment 2 of the present invention. Detailed Implementation

[0042] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0043] It should be noted that, in this document, the terms "comprising," "including," "having," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. Unless otherwise specified, an element defined by the phrase "comprising..." or "including..." does not exclude the presence of additional elements in the process, method, article, or terminal device that includes said element.

[0044] It should be noted that the accompanying drawings are all in a very simplified form and use non-precise ratios, and are only used to facilitate and clearly illustrate the purpose of one embodiment of the present invention.

[0045] The gas supply system provided by this invention is used to supply reactive gas to a substrate processing chamber for substrate processing. The gas supply system mainly includes a foaming chamber, an inlet pipe, an outlet pipe, and a filter assembly. The foaming chamber stores a liquid precursor; the gas generated by the vaporization of the precursor within the foaming chamber is the effective component of the reactive gas, used to process the substrate. The inlet pipe introduces an inert carrier gas into the precursor. The bubbles in the carrier gas rise within the precursor, promoting its vaporization, and the carrier gas mixes with the gas generated from the vaporization of the precursor. The outlet pipe delivers the mixed gas from the foaming chamber to the corresponding substrate processing chamber for substrate processing. The filter assembly is positioned between the liquid surface of the precursor and the inlet of the gas outlet pipe. The mixed gas passes through the filter assembly to reach the inlet of the gas outlet pipe. When droplets caused by the bursting of bubbles in the precursor splash into the filter assembly or the bubble chamber to form supersaturated precursor vapor, the filter assembly adsorbs the splashed droplets and liquefies the saturated precursor vapor, thereby preventing the droplets and supersaturated precursor vapor from reaching the inlet of the gas outlet pipe and forming particles that block the inlet of the gas outlet pipe. The filter assembly also heats the adsorbed droplets or particles to generate corresponding gases, achieving an automatic cleaning function and preventing it from adsorbing too many droplets to form a particle source or even block the gas passage.

[0046] Example 1

[0047] Figure 1 This is a schematic diagram of the gas supply system described in Embodiment 1 of the present invention. Figure 1 As shown, the gas supply system 100 includes a foaming chamber 110, an inlet pipe 120, an outlet pipe 130, and a filter assembly 140.

[0048] The foaming chamber 110 is a sealed container containing a liquid precursor 111, which has a liquid surface 112. Common liquid precursors include titanium tetrachloride (TiCl4) and tert-butylacetylene hexacarbonyl dicobalt (CCTBA). It should be noted that the liquid precursors in this invention include, but are not limited to, the above-mentioned chemicals, and can be selected as needed in practical applications. A heater (not shown in the figure) is used to heat the foaming chamber, which can promote the vaporization of the precursor 111. Different types of precursors require different vaporization temperatures, and the corresponding heating temperatures of the foaming chamber are also different. For example, when using TiCl4 as a precursor, the foaming chamber needs to be heated to 30°C, and when using CCTBA as a precursor, the foaming chamber needs to be heated to 40°C. The heating temperature of the foaming chamber is lower than the decomposition temperature of the precursor.

[0049] The inlet pipe 120 is used to deliver carrier gas to the foaming chamber 110 to promote the vaporization of the liquid precursor 111. The carrier gas is usually an inert gas, including one or a combination of argon, nitrogen, helium, and hydrogen. One end of the inlet pipe 120 is an inlet 121, and the other end is an outlet 122. The inlet 121 is outside the foaming chamber and is used to connect to the carrier gas source. The outlet 122 is inside the foaming chamber and is used to introduce the carrier gas into the foaming chamber. Specifically, the outlet 122 passes through the top wall of the foaming chamber and extends below the liquid surface 112 of the precursor, introducing the carrier gas into the liquid precursor. In this embodiment of the invention, a first control valve 123 is provided on the air intake pipe 120. The first control valve 123 controls the delivery of carrier gas in the air intake pipe. Specifically, when the first control valve 123 is opened, the carrier gas provided by the carrier gas source is delivered to the liquid precursor 111 through the air intake pipe 120; when the first control valve 123 is closed, the air intake pipe 120 is interrupted, and the carrier gas provided by the carrier gas source can no longer be delivered through the air intake pipe 120. To save carrier gas and avoid waste, in this embodiment of the invention, the first control valve 123 is located near the inlet 121. The introduced carrier gas forms bubbles in the liquid precursor, and part of the precursor vaporizes in the bubbles to generate corresponding steam, promoting the vaporization of the liquid precursor; the carrier gas bubbles float in the precursor and pass through the liquid surface 112, mixing with the steam generated by the vaporization of the liquid precursor 111 in the foaming chamber to form a mixed gas. The mixed gas enters the air outlet pipe 130 in the area above the liquid surface 112 in the foaming chamber.

[0050] The gas outlet pipe 130 is used to transport the mixed gas formed by the carrier gas and the precursor in the foaming chamber to the corresponding substrate processing chamber for surface treatment of the substrate. One end of the gas outlet pipe 130 is an inlet 131, and the other end is an outlet 132. The inlet 131 is inside the foaming chamber and above the liquid surface 112 of the precursor; the mixed gas in the foaming chamber enters the gas outlet pipe through the inlet 131. The outlet 132 is outside the foaming chamber and is used to connect to the corresponding processing chamber, transporting the mixed gas into the processing chamber. In this embodiment, a second control valve 133 is provided on the gas outlet pipe 130, which is used to control the delivery of gas from the gas outlet pipe to the processing chamber. The first control valve 123 and the second control valve 133 can be one-way control valves.

[0051] The filter assembly 140 is disposed inside the foaming chamber and located between the inlet 131 of the gas outlet pipe and the liquid surface 112 of the precursor. It adsorbs droplets and liquefies the supersaturated precursor vapor in the mixed gas, thereby preventing droplets splashed from the precursor and supersaturated precursor vapor from reaching the inlet 131 of the gas outlet pipe and forming particles that block the inlet. The mixed gas enters the inlet 131 of the gas outlet pipe after passing through the filter assembly.

[0052] Specifically, the filter assembly 140 has a porous region 141. The mixed gas passes through the porous region 141 and enters the inlet 131 of the gas outlet pipe. The porous region 141 filters droplets and supersaturated vapors of the precursor in the mixed gas. When bubbles burst in the precursor, causing liquid to splash everywhere, the upward-splashing liquid is intercepted by the porous region 141 before reaching the inlet 131 of the outlet pipe. It is adsorbed onto the porous region 141, thus preventing droplets from splashing onto the inlet 131 of the outlet pipe and forming droplets or even particles that block the inlet of the outlet pipe. When the supersaturated precursor vapor formed in the foaming chamber 110 passes through the porous region 141, due to the instability of the supersaturated vapor, some of the precursor vapor liquefies upon encountering the porous region 141, using the porous region 141 as a condensation nucleus. It is adsorbed onto the porous region 141, and the precursor vapor returns to a saturated state. The saturated precursor vapor is relatively stable and will enter the outlet pipe 130 through the inlet 131, without the phenomenon of liquefaction at the inlet 131 using the inlet 131 as a condensation nucleus. This prevents the supersaturated precursor vapor from reaching the inlet of the outlet pipe and avoids the supersaturated precursor vapor liquefying at the inlet of the outlet pipe, forming droplets or even particles that block the inlet of the outlet pipe.

[0053] In this embodiment of the invention, the porous region 141 is made of aluminum plated with nickel, pure nickel, Hastelloy, or stainless steel to prevent corrosion from precursor droplets or vapors. The diameter of the pores in the porous region 141 is on the order of hundreds of micrometers to millimeters, allowing gas to pass through while intercepting liquids. The pore diameter is determined by the viscosity coefficient of the precursor; smaller pore diameters are suitable for precursors with low viscosity coefficients, while larger pore diameters are suitable for precursors with high viscosity coefficients. Some of the droplets intercepted by the porous region 141 fall into the precursor, while some form particles on the surface of the porous region, blocking the pores of the porous region 141 and obstructing the gas passage. Therefore, it is necessary to remove the droplets and particles from the surface of the porous region.

[0054] The filter assembly 140 also has a temperature control element 142, which is used to adjust the temperature of the porous region 141. By adjusting the porous region to different temperatures, the automatic cleaning function of the porous region or the filtration function of the porous region can be realized.

[0055] Specifically, the temperature of the porous region 141 is cooled to a first temperature by the temperature control element 142. The first temperature is the temperature at which the supersaturated precursor vapor in the mixed gas can be liquefied. The first temperature is slightly lower than the heating temperature of the foaming chamber. When the supersaturated precursor vapor with the heating temperature of the foaming chamber passes through the porous region 141 with the first temperature, the supersaturated precursor vapor transfers some heat to the porous region 141, thereby accelerating the liquefaction of the supersaturated precursor vapor. Therefore, when the temperature of the porous region is cooled to the first temperature by the temperature control element, the filtration function of the porous region is enhanced. It should be noted that the first temperature should not be too low. If the porous region is too cold, it will absorb a large amount of heat, causing a large amount of unsaturated precursor vapor to liquefy back into droplet state, affecting the supply of reactant gas. In one embodiment, the difference between the first temperature and the heating temperature of the foaming chamber does not exceed 5°C. For example, when the foaming chamber with TiCl4 as the precursor is heated to 30°C, the temperature control element 142 cools the temperature of the porous region 141 to no less than 25°C, that is, the cooling temperature of the porous region is controlled between 30°C and 25°C; when the foaming chamber with CCTBA as the precursor is heated to 40°C, the temperature control element 142 cools the temperature of the porous region 141 to no less than 35°C, that is, the cooling temperature of the porous region is controlled between 40°C and 35°C.

[0056] The present invention further heats the porous region 141 to a second temperature via the temperature control element 142. This second temperature is sufficient to vaporize the droplets or particles adsorbed in the porous region. When gas supply is complete or during equipment maintenance, the porous region 141, heated to the second temperature by the temperature control element, transfers heat to the precursor droplets or particles adsorbed on its surface. This causes the particles to melt and form droplets, which then further vaporize to form the corresponding gas, thus leaving the porous region surface. Therefore, when the temperature control element heats the porous region to the second temperature, the porous region has an automatic cleaning function. To promote droplet or particle vaporization, the second temperature is typically higher than the heating temperature of the foaming chamber. For example, when the foaming chamber using TiCl4 as a precursor is heated to 30°C or the foaming chamber using CCTBA as a precursor is heated to 40°C, the temperature control element 142 heats the porous region 141 to 50°C, which is higher than the heating temperature of the foaming chamber. The higher the temperature, the faster the droplets and particles on the surface of the porous area vaporize, and the better the cleaning effect of the porous area. However, it should be noted that the second temperature should not be too high. Excessive temperature may cause the droplets or particles on the surface of the porous area to decompose or even produce byproducts that adhere to the surface of the porous area and are difficult to remove. Therefore, the second temperature should be lower than the decomposition temperature of the precursor.

[0057] In one embodiment of the present invention, the temperature control element 142 is powered by an external power supply connected to a conductive wire to perform operations such as heating or cooling the porous region. The conductive wire passes through the cavity wall of the foaming chamber and is sealed to the cavity wall of the foaming chamber. In this invention, the temperature control element 142 is a Peltier element. When a positive current is supplied to the Peltier element, the portion of the Peltier element connected to the porous region cools, thereby cooling the temperature of the porous region to a first temperature. When a reverse current is supplied to the Peltier element, the portion of the Peltier element connected to the porous region heats, thereby heating the temperature of the porous region to a second temperature. Alternatively, the temperature control element 142 is a temperature control element based on a temperature-controllable fluid, adjusting the temperature of the porous region by regulating the temperature of the fluid connected to the porous region.

[0058] In one embodiment of the present invention, the temperature control element 142 is arranged around the outer edge of the porous region 141, such as... Figure 2 As shown; in this configuration, the middle portion of the porous region 141 may experience delayed heating or uneven heating. To ensure uniform heating of the porous region, in another embodiment of the present invention, the temperature control element 142 is spirally coiled or concentrically arranged on the surface of the porous region 141, such as... Figure 3 and 4 As shown; in another embodiment of the present invention, the temperature control element 142 is arranged in a cross or grid pattern on the surface of the porous region 141, such as... Figure 5 and6 As shown; in another embodiment of the present invention, the temperature control element 142 is arranged in parallel on the surface of the porous region 141, as shown. Figure 7 As shown. It should be noted that the present invention does not limit the specific arrangement of the temperature control element in the porous area, and the design can be adjusted as needed in practical applications.

[0059] The gas supply system described in Embodiment 1 of the present invention further includes a temperature sensing element and a temperature control device (not shown in the figure). The temperature sensing element is used to monitor the temperature of the porous region 141. The temperature sensing element is communicatively connected to the temperature control device and transmits the monitoring results to the temperature control device. The temperature control device is communicatively connected to the temperature control element 142 and controls the temperature control element 142 to adjust the temperature of the porous region 141 based on the monitoring results fed back by the temperature sensing element.

[0060] To prevent heat conduction between the filter assembly and the bubble chamber, the filter assembly 140 is connected to the bubble chamber 110 via a heat-insulating component. Specifically, the heat-insulating component consists of several support protrusions (not shown in the figure), which are circumferentially distributed on the inner wall of the bubble chamber 110. The filter assembly 140 is placed on these support protrusions, which support the filter assembly 140.

[0061] In one embodiment of the present invention, the filter assembly is a flange 140a containing the porous region. Specifically, the foaming chamber 110 is divided into a top cover 110a and a cavity 110b, and the flange 140a is disposed between the top cover 110a and the cavity 110b. The flange has multiple mounting holes, and the top cover 110a and the cavity 110b also have multiple corresponding mounting holes. The top cover 110a, flange 140a, and cavity 110b are clamped and fixed by fastening mechanisms such as bolts and screws passing through the mounting holes. Figure 8 As shown. Figure 9 As shown, the flange 140a has a porous region 141a in its middle area. The flange 140a and the porous region 141a are connected by an insulation component 143 to prevent heat conduction between the porous region and the foaming chamber. The flange 140a also includes a temperature control element (not shown in the figure). The porous region 141a and the temperature control element are described above and will not be repeated here.

[0062] The gas supply system described in Embodiment 1 of the present invention further includes a connecting pipe 150, which is disposed between the inlet pipe 120 and the outlet pipe 130 to introduce the carrier gas in the inlet pipe 120 into the outlet pipe 130 and to clean the outlet pipe 130.

[0063] Specifically, one end of the connecting pipe 150 is connected to the air inlet pipe 120 downstream of the first control valve 123, and the other end is connected to the air outlet pipe 130 upstream of the second control valve 133; the connecting pipe 150 connects the air inlet pipe 120 and the air outlet pipe 130. A third control valve 151 is provided on the connecting pipe 150 for controlling the delivery of carrier gas in the connecting pipe 150. A fourth control valve 124 is further provided on the air inlet pipe 120, located between the connection point of the air inlet pipe and the connecting pipe and the bubble chamber 110; the fourth control valve 124 is used to control the delivery of carrier gas to the bubble chamber. A fifth control valve 134 is further provided on the air outlet pipe 130, located between the connection point of the air outlet pipe and the connecting pipe and the bubble chamber 110; the fifth control valve 134 is used to control the delivery of carrier gas to the bubble chamber. In one embodiment, the fourth control valve 124 and the fifth control valve 134 are one-way control valves.

[0064] When the gas supply system 100 delivers the gas-processing substrate to the corresponding processing chamber:

[0065] The first control valve 123 and the fourth control valve 124 on the inlet pipe, and the second control valve 133 and the fifth control valve 134 on the outlet pipe are opened, while the third control valve 151 on the connecting pipe is closed. The carrier gas from the carrier gas source enters the liquid precursor 111 through the inlet pipe 120 to foam, and forms a mixed gas with the vaporized precursor vapor in the foaming chamber. The temperature control element 142 cools the temperature of the porous region 141 to a first temperature that liquefies the supersaturated precursor vapor in the mixed gas. The mixed gas passes through the porous region 141 at the first temperature and enters the inlet 131 of the outlet pipe, transporting the mixed gas in the foaming chamber to the corresponding processing chamber to process the substrate. In one embodiment of the present invention, the processing chamber uses the mixed gas to perform chemical vapor deposition on the substrate.

[0066] Before substrate processing is completed, or before equipment maintenance is performed:

[0067] The first control valve 123 on the intake pipe, the third control valve 151 on the connecting pipe, and the second control valve 133 on the exhaust pipe are opened, while the fourth control valve 124 on the intake pipe and the fifth control valve 134 on the exhaust pipe are closed. The carrier gas in the intake pipe 120 will enter the exhaust pipe 130 through the connecting pipe 150 to clean the exhaust pipe 130, thereby removing residual precursors and the like from the exhaust pipe; and / or, the temperature control element 142 heats the temperature of the porous region 141 to a second temperature that can vaporize the droplets or particles adsorbed in the porous region, thereby removing droplets and particles from the surface of the porous region.

[0068] Example 2

[0069] Figure 10 This is a schematic diagram of the gas supply system described in Embodiment 2 of the present invention. In Embodiment 2, the gas supply system 200 includes a foaming chamber 210, an inlet pipe 220, an outlet pipe 230, a connecting pipe 250, and a filter assembly 240, etc.; wherein, the foaming chamber 210 contains a liquid precursor 211, and the precursor 211 has a liquid surface 212; the outlet pipe 230 has an inlet 231, such as... Figure 10 As shown.

[0070] In the above embodiment 1, the gas supply system has only one filter component 140. The filter component 140 is located between the inlet 131 of the gas outlet pipe and the liquid surface 112 of the precursor to block the droplets splashed out by the precursor and the supersaturated vapor of the precursor from reaching the inlet 131 of the gas outlet pipe. The mixed gas formed by the carrier gas and the precursor can only reach the inlet 131 of the gas outlet pipe after passing through the filter component 140.

[0071] Unlike Embodiment 1 described above, in Embodiment 2 of the present invention, the gas supply system 200 is provided with multiple filter components 240. These filter components 240 are arranged in layers between the inlet 231 of the outlet pipe and the liquid surface 212 of the precursor. Each filter component 240 covers the entire cross-section of the foaming chamber 210. The mixed gas formed by the carrier gas and the precursor must pass through multiple layers of filter components to reach the inlet 231 of the outlet pipe. By filtering splashing droplets and supersaturated precursor vapor in the mixed gas through multiple filter components, the filtration effect of the gas supply system 200 is further enhanced. It is particularly effective in preventing supersaturated precursor vapor from reaching the processing chamber and forming particles on the substrate surface, thus contaminating the substrate.

[0072] The gas supply system and gas supply method provided by this invention solve the problem of blockage at the inlet of the gas outlet pipe caused by droplet splashing and supersaturated vapor of precursors. It also has an automatic cleaning function, long service life, and good effect. It can stably and efficiently supply gas to the corresponding substrate processing device, thereby improving the substrate processing rate and quality of the substrate processing device.

[0073] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A gas supply system for supplying reactive gases to a substrate processing chamber, characterized in that, The gas supply system includes: The foaming chamber is used to store liquid precursors; An air intake pipe is used to introduce carrier gas into the precursor for foaming, and the outlet of the air intake pipe is located below the liquid surface of the precursor. An exhaust pipe is used to discharge the mixed gas formed by the carrier gas and the precursor in the foaming chamber; the inlet of the exhaust pipe is located above the liquid surface of the precursor. A filter assembly is located between the inlet of the gas outlet pipe and the liquid surface of the precursor; the filter assembly is used to liquefy the supersaturated precursor vapor in the mixed gas, and the mixed gas enters the inlet of the gas outlet pipe after passing through the filter assembly. The filter assembly includes a porous region through which the mixed gas enters the inlet of the outlet pipe; the diameter of the pores in the porous region is on the order of hundreds of micrometers to millimeters, which allows gas to pass through while intercepting liquid; The filter assembly also includes a temperature control element for cooling the temperature of the porous region to a first temperature that allows supersaturated precursor vapors in the mixed gas to liquefy.

2. The gas supply system as described in claim 1, characterized in that, The temperature control element is also used to heat the temperature of the porous region to a second temperature that allows the droplets adsorbed in the porous region to vaporize, the second temperature being lower than the decomposition temperature of the precursor.

3. The gas supply system as described in claim 1 or 2, characterized in that, The temperature control element is arranged around the outer edge of the porous region; or The temperature control element is spirally coiled or concentrically arranged on the surface of the porous region; or The temperature control elements are arranged in a cross or grid pattern on the surface of the porous area, or The temperature control elements are arranged in parallel on the surface of the porous region.

4. The gas supply system as described in claim 1 or 2, characterized in that, The temperature control element is a Peltier element, or a temperature control element based on a temperature-controllable fluid.

5. The gas supply system as described in claim 1 or 2, characterized in that, The gas supply system also includes a temperature sensing element for monitoring the temperature of the porous region.

6. The gas supply system as described in claim 5, characterized in that, The gas supply system also includes a temperature control device, which controls the temperature of the porous region based on the monitoring results of the temperature sensing element.

7. The gas supply system as described in claim 1, characterized in that, The porous region is made of aluminum plated with nickel, pure nickel, Hastelloy, or stainless steel.

8. The gas supply system as described in claim 1, characterized in that, The gas supply system includes multiple filtration components; The multiple filter components are arranged in layers between the inlet of the gas outlet pipe and the liquid surface of the precursor.

9. The gas supply system as described in claim 1, characterized in that, The filter assembly is disposed inside the foaming chamber, and the filter assembly is connected to the foaming chamber through a heat insulation component.

10. The gas supply system as described in claim 9, characterized in that, The heat insulation component consists of several supporting protrusions; The plurality of supporting protrusions are distributed circumferentially along the inner wall of the foaming chamber to support the filter assembly.

11. The gas supply system as claimed in claim 1, characterized in that, The filter assembly is a flange containing the porous region.

12. The gas supply system as claimed in claim 1, characterized in that, The diameter of the pores in the porous region is on the order of hundreds of micrometers to millimeters.

13. The gas supply system as claimed in claim 1, characterized in that, The substrate processing chamber uses the mixed gas for chemical vapor deposition.

14. A gas supply method, applicable to the gas supply system according to any one of claims 1 to 13, characterized in that, The gas supply method comprises the following steps: Carrier gas is introduced into the precursor through the air intake pipe to form the mixed gas; The temperature of the porous region of the filter assembly is cooled to a first temperature that allows the supersaturated precursor vapor in the mixed gas to liquefy. The mixed gas enters the inlet of the outlet pipe through the filter assembly and is then transported to the corresponding substrate processing chamber via the outlet pipe.

15. The gas supply method as described in claim 14, characterized in that, The gas supply method further includes: heating the porous region to a second temperature that allows droplets adsorbed in the porous region to vaporize when no substrate processing is performed.

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