Driving circuit and driving method thereof, and microfluidic device

Abstract

The application provides a driving circuit, a driving method thereof and a micro-fluidic device. The driving circuit comprises a charging unit, a first energy storage unit, a driving unit and a potential holding unit. The charging unit is connected with a data line and a first scanning signal line, and outputs a data voltage on the data line in a conduction state of the charging unit. The first energy storage unit is connected with a first voltage source and the charging unit, and is used for storing the data voltage output by the charging unit in the conduction state of the charging unit. The driving unit is connected between the first voltage source and a driving electrode, and is connected with the charging unit and the first energy storage unit at a first node. The potential holding unit is connected between the driving unit and the driving electrode, and is connected with a second voltage source. In the conduction state, the potential holding unit uses a low potential voltage output by the second voltage source to pull down the potential on the driving electrode, so as to write a low potential to the driving electrode, thereby solving the problem of low potential drift.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of driving circuit, in particular to a driving circuit and a driving method thereof, and a microfluidic device. BACKGROUND

[0002] The microfluidic device is a device that moves droplets by relying on the change of liquid wetting effect, and can complete state conversion such as movement, fusion and splitting of droplets, so as to analyze optical, chemical and physical properties of different components or fused components.

[0003] In the construction of a microfluidic platform, its droplet control platform is the core component of the platform. The conventional microfluidic device is to realize the manipulation of fluid by designing different types of channels and micro-pump valve structures. This way is complex in structure and tedious in processing, and cannot accurately and stably control the droplets, with high failure rate and low efficiency of droplet control.

[0004] A new microfluidic technology is to rely on a small driving circuit unit inside the object table to realize the electrical conversion of a single unit to the driving electrode, and then change the wetting performance of the droplet to achieve the purpose of moving the droplet. Therefore, in the design of the driving circuit unit, it is necessary to meet the requirements of accuracy, fast response and stability of the electrical properties of the driving electrode, so as to realize the accurate and stable control of the droplets. However, the existing driving circuit is prone to low potential drift when outputting low potential to the driving electrode. SUMMARY

[0005] To solve the above problems, the present application provides a driving circuit and a driving method thereof, and a microfluidic device, which can solve the problem of low potential drift.

[0006] To solve the above problems, the first technical solution provided by the present application is to provide a driving circuit for driving a driving electrode in a microfluidic device, comprising: a charging unit connected to a data line and a first scan signal line, the first scan signal line being used to control the charging unit to be turned on or turned off, and outputting a data voltage on the data line in the on state of the charging unit; a first energy storage unit connected to a first voltage source and the charging unit, the first energy storage unit being used to store the data voltage output by the charging unit in the on state of the charging unit; a driving unit connected between the first voltage source and the driving electrode, and connected to the charging unit and the first energy storage unit at a first node; and a potential maintaining unit connected between the driving unit and the driving electrode, and connected to a second voltage source; wherein the potential maintaining unit is used to pull down the potential on the driving electrode by a low potential voltage output by the second voltage source in the on state, so as to write a low potential to the driving electrode.

[0007] In an embodiment, the potential holding unit comprises a first transistor, a first end of the first transistor is connected to the second voltage source, a second end of the first transistor is connected to the driving electrode, a control end of the first transistor is connected to a second scan signal line, the second scan signal line is used to control the first transistor to be turned on or turned off, and the first transistor is used to pull down the potential on the driving electrode by a low potential voltage output by the second voltage source in the turned-on state, so as to write a low potential to the driving electrode.

[0008] In an embodiment, the potential holding unit comprises a second transistor, a first end of the second transistor is connected to the second voltage source, and a second end of the second transistor is connected to the driving electrode; a third transistor and a fourth transistor, a control end and a first end of the third transistor and a first end of the fourth transistor are connected to the first voltage source; a second end of the third transistor and a control end of the fourth transistor are connected at a second node, and a second end of the fourth transistor and a control end of the second transistor are connected at a third node; a fifth transistor and a sixth transistor, a first end of the fifth transistor and a first end of the sixth transistor are connected to the second voltage source, a control end of the fifth transistor and a control end of the sixth transistor are connected to the first node, a second end of the fifth transistor is connected to the second node, and a second end of the sixth transistor is connected to the third node.

[0009] In an embodiment, the potential holding unit comprises a seventh transistor, a first end of the seventh transistor is connected to the second voltage source, and a second end of the seventh transistor is connected to the driving electrode; an eighth transistor, a first end of the eighth transistor is connected to the first voltage source, and a second end of the eighth transistor and a control end of the seventh transistor are connected at a fourth node; a ninth transistor, a first end of the ninth transistor is connected to the second voltage source, a second end of the ninth transistor is connected to the fourth node, and a control end of the ninth transistor is connected to the first node.

[0010] In an embodiment, the charging unit comprises a tenth transistor, a first end of the tenth transistor is connected to the data line, a second end of the tenth transistor is connected to the first node, and a control end of the tenth transistor is connected to the first scan signal line.

[0011] In an embodiment, the charging unit comprises a plurality of tenth transistors connected in series, input ends of the plurality of tenth transistors connected in series are connected to the data line, output ends of the plurality of tenth transistors connected in series are connected to the first node, and control ends of the plurality of tenth transistors connected in series are connected to the first scan signal line.

[0012] In an embodiment, the driving unit comprises an eleventh transistor, a first end of the eleventh transistor is connected to the first voltage source, a second end of the eleventh transistor is connected to the driving electrode, and a control end of the eleventh transistor is connected to the first node.

[0013] To solve the above problems, a second technical solution provided by the application is to provide a microfluidic device, comprising: a driving electrode; a driving circuit, the driving circuit comprising any one of the driving circuits described above, and the driving circuit is used to drive the driving electrode.

[0014] In an embodiment, the microfluidic device comprises: a first substrate and a second substrate arranged oppositely, and a channel accommodating one or more liquid droplets is formed between the first substrate and the second substrate; the first substrate comprises a first substrate, a common electrode and a first hydrophobic layer arranged in sequence towards the second substrate; the second substrate comprises a second substrate, a driving circuit layer, a plurality of driving electrodes, an insulating layer and a second hydrophobic layer arranged in sequence towards the first substrate; wherein the driving circuit layer comprises a plurality of arrayed driving circuits, and the plurality of driving circuits are connected to the plurality of driving electrodes correspondingly; and the channel is located between the first hydrophobic layer and the second hydrophobic layer.

[0015] To solve the above problems, a third technical solution provided by the application is to provide a driving method of a driving circuit, the driving circuit comprising any one of the driving circuits described above, and the driving method comprising: in a high potential state for the driving electrode, the first scan signal line controls the charging unit to be turned on, the high potential data voltage output by the data line is output to the first node to control the driving unit to be turned on, and the first voltage source writes high potential for the driving electrode through the turned-on driving unit; in a low potential state for the driving electrode, the first scan signal line controls the charging unit to be turned on, the low potential data voltage output by the data line is output to the first node to control the driving unit to be turned off, and the potential maintaining unit is controlled to be turned on to make the low potential voltage output by the second voltage source pull down the potential on the driving electrode through the turned-on potential maintaining unit, so as to write low potential for the driving electrode.

[0016] Unlike existing technologies, this application provides a driving circuit and its driving method, as well as a microfluidic device. The driving circuit includes a charging unit, a first energy storage unit, a driving unit, and a potential holding unit. The charging unit is connected to a data line and a first scan signal line, which controls the charging unit to be on or off. When the charging unit is on, it outputs a data voltage on the data line. The first energy storage unit is connected to a first voltage source and the charging unit, and stores the data voltage output by the charging unit when the charging unit is on. The driving unit is connected between the first voltage source and the driving electrode, and is connected to the charging unit and the first energy storage unit at a first node. The potential holding unit is connected between the driving unit and the driving electrode, and is connected to a second voltage source. When on, the potential holding unit uses a low-potential voltage output from the second voltage source to pull down the potential on the driving electrode, thus writing a low potential to the driving electrode and solving the problem of low-potential drift. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort, wherein:

[0018] Figure 1 A schematic diagram of the driving circuit and driving electrodes provided in the embodiments of this application;

[0019] Figure 2 for Figure 1 A schematic diagram of the circuit structure of the first embodiment of the driving circuit and driving electrodes is shown.

[0020] Figure 3 for Figure 1 A schematic diagram of the circuit structure of the second embodiment of the driving circuit and driving electrodes is shown.

[0021] Figure 4 for Figure 1 The circuit structure diagram of the third embodiment of the driving circuit and driving electrodes shown is as follows;

[0022] Figure 5 for Figure 1 The circuit structure diagram of the fourth embodiment of the driving circuit and driving electrodes is shown.

[0023] Figure 6 A schematic flowchart of the driving method for the driving circuit provided in the embodiments of this application;

[0024] Figure 7 A timing diagram for writing a high potential to the driving electrode, provided for an embodiment of this application;

[0025] Figure 8 Timing diagram for writing low potential to driving electrode provided for embodiments of the present application;

[0026] Figure 9 Module schematic diagram of micro-control flow device provided for embodiments of the present application;

[0027] Figure 10 Structural schematic diagram of micro-control flow device provided for embodiments of the present application.

[0028] Label explanation:

[0029] Driving circuit-100; charging unit-10; first energy storage unit-20; driving unit-30; potential holding unit-40;

[0030] First transistor-T1; second transistor-T2; third transistor-T3; fourth transistor-T4; fifth transistor-T5; sixth transistor-T6; seventh transistor-T7; eighth transistor-T8; ninth transistor-T9; tenth transistor-T10; eleventh transistor-T11; capacitor-C1;

[0031] Data line-Data; first scan signal line-Scan1; second scan signal line-Scan2; first voltage source-VGH; second voltage source-VSS;

[0032] First node-n1; second node-n2; third node-n3; fourth node-n4;

[0033] Micro-fluidic device-300; driving electrode-200; first substrate-310; substrate-311; common electrode-312; first hydrophobic layer-313; second substrate-320; second substrate-321; driving circuit layer-322; insulating layer-324; second hydrophobic layer-325; channel-330. DETAILED DESCRIPTION

[0034] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the scope of protection of the present application.

[0035] The terms "first", "second", "third", and the like in this application are only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined as "first", "second", "third" can explicitly or implicitly include at least one of the features.

[0036] Reference to "embodiments" herein means that the specific features, structures or properties described in connection with the embodiments can be included in at least one embodiment of the application. The appearance of this phrase in various places in the specification does not necessarily mean that the same embodiments are referred to, nor does it mean that the embodiments are independent or alternative to each other. The skilled person explicitly and implicitly understands that the embodiments described herein can be combined with other embodiments.

[0037] Reference to "embodiments" herein means that the specific features, structures or properties described in connection with the embodiments can be included in at least one embodiment of the application. The appearance of this phrase in various places in the specification does not necessarily mean that the same embodiments are referred to, nor does it mean that the embodiments are independent or alternative to each other. The skilled person explicitly and implicitly understands that the embodiments described herein can be combined with other embodiments. Figure 1 Figure 1 The driving circuit and the driving electrode module provided by the embodiments of the application. The embodiments of the application provide a driving circuit 100, which is used to drive a driving electrode 200 in a microfluidic device 300. Specifically, the driving circuit 100 includes a charging unit 10, a first energy storage unit 20, and a driving unit 30.

[0038] The charging unit 10 is connected to a data line Data and a first scan signal line Scan1. The data line Data is used to output a data voltage. The first scan signal line Scan1 is used to control the charging unit 10 to be turned on or turned off. When the charging unit 10 is turned on, the data voltage on the data line Data is output.

[0039] The first energy storage unit 20 is connected to a first voltage source VGH and the charging unit 10. The first energy storage unit 20 is used to store the data voltage output by the charging unit 10 when the charging unit 10 is turned on.

[0040] In the embodiments of the application, the first voltage source VGH can be a high-low voltage source. The first energy storage unit 20 is a capacitor C1.

[0041] The driving unit 30 is connected between the first voltage source VGH and the driving electrode 200, and is connected to the charging unit 10 and the first energy storage unit 20 at a first node n1. The driving unit 30 is used to write a high voltage on the driving electrode 200 from the first voltage source VGH in the on state, so as to control the driving electrode 200 to work.

[0042] In an embodiment, when the driving electrode 200 needs to write a high voltage, the first scan signal line Scan1 controls the charging unit 10 to be turned on, the first energy storage unit 20 stores the data voltage output by the charging unit 10, and maintains the potential of the first node n1, thereby maintaining the state of the driving unit 30.​

[0043] In the related art, when the driving electrode 200 needs to be written with a low potential, the potential on the driving electrode 200 will continue to rise due to the leakage of the transistor in the driving unit 30, thereby causing the problem of low potential drift.

[0044] To solve the above problem, the driving circuit 100 provided by the embodiments of the present application further comprises a potential holding unit 40. The potential holding unit 40 is connected between the driving unit 30 and the driving electrode 200 and is connected to the second voltage source VSS. Specifically, in the embodiments of the present application, the second voltage source VSS can be a low potential voltage source, and the potential holding unit 40 is used to pull down the potential on the driving electrode 200 by using the low potential voltage output by the second voltage source VSS in the on state, so as to write a low potential into the driving electrode 200, thereby solving the problem of low potential drift on the driving electrode 200.

[0045] Specifically, when the driving electrode 200 needs to be written with a high potential, the data voltage of the high potential is written into the first node n1 through the turned-on charging unit 10, and then the driving unit 30 is turned on to write the high potential voltage output by the first voltage source VGH into the driving electrode 200; when the driving electrode 200 needs to be written with a low potential, the data voltage of the low potential is written into the first node n1 through the turned-on charging unit 10, or the charging unit 10 is not turned on, so that the potential of the first node n1 is low, the driving unit 30 is not turned on, and the potential holding unit 40 is turned on, the potential holding unit 40 pulls down the potential on the driving electrode 200 by using the low potential voltage output by the second voltage source VSS to write a low potential into the driving electrode 200. Therefore, the driving circuit 100 provided by the present application has a faster response speed, higher accuracy and stability, and can solve the problem of low potential drift.

[0046] The type of the transistor in each unit can be a P-type transistor or an N-type transistor. For ease of description, the present application will be described by taking an N-type transistor as an example.

[0047] Referring to Figure 2 , Figure 2 To Figure 1The driving circuit and the driving electrode of the first embodiment are shown in a circuit structure schematic diagram. Specifically, in the first embodiment of the potential holding unit 40, the potential holding unit 40 includes a first transistor T1, wherein the first end of the first transistor T1 is connected to the second voltage source VSS, the second end of the first transistor T1 is connected to the driving electrode 200, and the control end of the first transistor T1 is connected to the second scan signal line Scan2. The second scan signal line Scan2 is used to control the first transistor T1 to be turned on or turned off. The first transistor T1 is used to pull down the potential on the driving electrode 200 by using the low potential voltage output by the second voltage source VSS in the turned-on state, so as to write the low potential to the driving electrode 200.

[0048] Specifically, in this embodiment, when the driving electrode 200 needs to be written with the low potential, the second scan signal line Scan2 controls the first transistor T1 to be turned on. The low potential voltage output by the second voltage source VSS pulls down the potential on the driving electrode 200 through the turned-on first transistor T1, so as to write the low potential to the driving electrode 200.

[0049] Referring to Figure 3 , Figure 3 for Figure 1 The driving circuit and the driving electrode of the second embodiment are shown in a circuit structure schematic diagram. Specifically, in the second embodiment of the potential holding unit 40, the potential holding unit 40 includes a second transistor T2, a third transistor T3, a fourth transistor T4, a fifth transistor T5, and a sixth transistor T6. Wherein the first end of the second transistor T2 is connected to the second voltage source VSS, and the second end of the second transistor T2 is connected to the driving electrode 200; the control end and the first end of the third transistor T3, and the first end of the fourth transistor T4 are all connected to the first voltage source VGH; the second end of the third transistor T3 and the control end of the fourth transistor T4 are connected to the second node n2, and the second end of the fourth transistor T4 and the control end of the second transistor T2 are connected to the third node n3; the first end of the fifth transistor T5 and the first end of the sixth transistor T6 are both connected to the second voltage source VSS, the control end of the fifth transistor T5 and the control end of the sixth transistor T6 are both connected to the first node n1, the second end of the fifth transistor T5 is connected to the second node n2, and the second end of the sixth transistor T6 is connected to the third node n3.

[0050] Specifically, in this embodiment, when the driving electrode 200 needs to be written with a low potential, the first node n1 is at a low potential, the fifth transistor T5 and the sixth transistor T6 are controlled to be non-conductive, the third transistor T3 is controlled to be conductive by the high potential on the first voltage source VGH, a high potential is written to the second node n2, the fourth transistor T4 is controlled to be conductive, the high potential on the first voltage source VGH is written to the third node n3, the second transistor T2 is controlled to be conductive, and the low potential voltage output by the second voltage source VSS is pulled down to the driving electrode 200 through the conductive second transistor T2, so as to write a low potential to the driving electrode 200.

[0051] Referring to Figure 4 , Figure 4 for Figure 1 the circuit structure diagram of the third embodiment of the driving circuit and the driving electrode, specifically, in the third embodiment of the potential maintaining unit 40, the potential maintaining unit 40 includes the seventh transistor T7, the eighth transistor T8 and the ninth transistor T9, wherein the first end of the seventh transistor T7 is connected with the second voltage source VSS, the second end of the seventh transistor T7 is connected with the driving electrode 200; the first end of the eighth transistor T8 is connected with the first voltage source VGH, the second end of the eighth transistor T8 is connected with the control end of the seventh transistor T7 at the fourth node n4; the first end of the ninth transistor T9 is connected with the second voltage source VSS, the second end of the ninth transistor T9 is connected with the fourth node n4, and the control end of the ninth transistor T9 is connected with the first node n1.

[0052] Specifically, in this embodiment, when the driving electrode 200 needs to be written with a low potential, the first node n1 is at a low potential, the ninth transistor T9 is controlled to be non-conductive, the eighth transistor T8 is controlled to be conductive by the high potential on the first voltage source VGH, a high potential is written to the fourth node n4, the seventh transistor T7 is controlled to be conductive, and the low potential voltage output by the second voltage source VSS is pulled down to the driving electrode 200 through the conductive seventh transistor T7, so as to write a low potential to the driving electrode 200.

[0053] Referring to Figure 2 , Figure 3 or Figure 4 , in the first embodiment of the charging unit 10, the charging unit 10 includes a tenth transistor T10, the first end of the tenth transistor T10 is connected with the data line Data, the second end of the tenth transistor T10 is connected with the first node n1, and the control end of the tenth transistor T10 is connected with the first scan signal line Scan1.

[0054] Specifically, in this embodiment, when the driving electrode 200 needs to be written with a high potential, the high potential data voltage is written to the first node n1 through the turned-on tenth transistor T10 to control the driving unit 30 to be turned on, and then the high potential voltage output by the first voltage source VGH is written to the driving electrode 200. When the driving electrode 200 needs to be written with a low potential, the first scan signal line Scan1 controls the tenth transistor T10 to be turned on, and the low potential data voltage is written to the first node n1 through the turned-on tenth transistor T10, so that the driving unit 30 is not turned on, or the first scan signal line Scan1 controls the tenth transistor T10 to be turned off, so that the potential of the first node n1 is low, and the driving unit 30 is not turned on.

[0055] Referring to Figure 5 , Figure 5 is Figure 1 a circuit structure schematic diagram of the fourth embodiment of the driving circuit and the driving electrode, specifically, in the second embodiment of the charging unit 10, the charging unit 10 includes a plurality of series-connected tenth transistors T10, the input ends of the plurality of series-connected tenth transistors T10 are connected to the data line Data, the output ends of the plurality of series-connected tenth transistors T10 are connected to the first node n1, and the control ends of the plurality of series-connected tenth transistors T10 are connected to the first scan signal line Scan1.

[0056] In the embodiments of the present application, the charging unit 10 includes two series-connected tenth transistors T10 as an example. Of course, in other embodiments, the charging unit 10 also includes three, five or the like series-connected tenth transistors T10, which are not limited here.

[0057] Specifically, in this embodiment, when the driving electrode 200 needs to be written with a high potential, the first scan signal line Scan1 controls all the tenth transistors T10 to be turned on, the high potential data voltage is written to the first node n1 through the turned-on tenth transistor T10 to control the driving unit 30 to be turned on, and then the high potential voltage output by the first voltage source VGH is written to the driving electrode 200. Further, since the number of tenth transistors T10 in this embodiment is multiple, the difficulty of leakage of the first node is increased, which is beneficial to maintain the potential of the first node.

[0058] When the driving electrode 200 needs to be written with a low potential, the first scan signal line Scan1 controls all the tenth transistors T10 to be turned on, and the low potential data voltage is written to the first node n1 through the turned-on tenth transistor T10, so that the driving unit 30 is not turned on, or the first scan signal line Scan1 controls all the tenth transistors T10 to be turned off, so that the potential of the first node n1 is low, and the driving unit 30 is not turned on.

[0059] Referring to Figure 4In the embodiment of the present application, the driving unit 30 includes an eleventh transistor T11, the first end of the eleventh transistor T11 is connected to the first voltage source VGH, the second end of the eleventh transistor T11 is connected to the driving electrode 200, and the control end of the eleventh transistor T11 is connected to the first node n1. Specifically, the eleventh transistor T11 is controlled to be turned on or turned off by the potential of the first node n1, and in the on state of the eleventh transistor T11, the high potential voltage output by the first voltage source VGH is written to the driving electrode 200 through the turned-on eleventh transistor T11.

[0060] Specifically, when the driving electrode 200 needs to be written with a high potential, the high potential data voltage is written to the first node n1 through the turned-on charging unit 10, and then the driving unit 30 is turned on, so that the high potential voltage output by the first voltage source VGH is written to the driving electrode 200; when the driving electrode 200 needs to be written with a low potential, the low potential data voltage is written to the first node n1 through the turned-on charging unit 10, or the charging unit 10 is not turned on, so that the potential of the first node n1 is low, the driving unit 30 is not turned on, and the potential maintaining unit 40 is turned on, the potential maintaining unit 40 uses the low potential voltage output by the second voltage source VSS to pull down the potential on the driving electrode 200, so as to write the low potential to the driving electrode 200. Therefore, the driving circuit 100 provided by the present application has a faster response speed, higher accuracy and stability, and can solve the problem of low potential drift.

[0061] Referring to Figure 6 , Figure 6 The flowchart of the driving method of the driving circuit provided by the embodiment of the present application is shown.

[0062] Specifically, the embodiment of the present application further provides a driving method of a driving circuit 100, the driving circuit 100 includes the driving circuit 100 provided by any of the above embodiments, and specifically, the driving method includes:

[0063] Step S1: in the state of writing a high potential to the driving electrode 200, the first scan signal line Scan1 controls the charging unit 10 to be turned on, the high potential data voltage output by the data line Data is output to the first node n1, so as to control the driving unit 30 to be turned on, and the first voltage source VGH writes the high potential to the driving electrode 200 through the turned-on driving unit 30.

[0064] Step S2: in the low potential state for writing the driving electrode 200, the first scan signal line Scan1 controls the charging unit 10 to turn on, the low potential data voltage output by the data line Data is output to the first node n1, to control the driving unit 30 to turn off, and control the potential holding unit 40 to turn on, so that the low potential voltage output by the second voltage source VSS is used to pull down the potential on the driving electrode 200 by the turned-on potential holding unit 40, to write the low potential for the driving electrode 200.

[0065] Specifically, in an embodiment, referring to Figure 4 and Figure 7 , Figure 7 the timing diagram for writing the high potential for the driving electrode provided by the embodiment of the present application.

[0066] In the high potential state for writing the driving electrode 200, the data line Data outputs the high potential data voltage, and the first scan signal line Scan1 outputs the high voltage to control the tenth transistor T10 to turn on, the high potential data voltage is written to the first node n1, and the eleventh transistor T11 is controlled to turn on, so that the high potential voltage output by the first voltage source VGH is written to the driving electrode 200 through the turned-on eleventh transistor T11. After the first scan signal line Scan1 outputs the low voltage to control the tenth transistor T10 to turn off, the eleventh transistor T11 can still maintain the turned-on state due to the existence of the first energy storage unit 20, and the high potential voltage output by the first voltage source VGH is written to the driving electrode 200 through the continuously turned-on eleventh transistor T11. In addition, the high potential of the first node n1 controls the ninth transistor T9 to turn on, the low potential voltage output by the second voltage source VSS pulls down the potential on the fourth node n4 through the turned-on ninth transistor T9, controls the seventh transistor T7 to not turn on, and the potential on the driving electrode 200 will not be pulled down by the second voltage source VSS.

[0067] Referring to Figure 4 and Figure 8 , Figure 8 the timing diagram for writing the low potential for the driving electrode provided by the embodiment of the present application.

[0068] In the low potential state of the driving electrode 200, the data line Data outputs a low potential data voltage, and the first scan signal line Scan1 outputs a high voltage to control the tenth transistor T10 to be turned on, the low potential data voltage is written to the first node n1, the eleventh transistor T11 is controlled to be turned off, and after the first scan signal line Scan1 outputs a low voltage to control the tenth transistor T10 to be turned off, the eleventh transistor T11 can still maintain the turned-off state due to the first energy storage unit 20. In addition, the high potential voltage output by the first voltage source VGH controls the eighth transistor T8 to be turned on, and the high potential is written to the fourth node n4, while the low potential of the first node n1 controls the ninth transistor T9 to be turned off, and the high potential written to the fourth node n4 cannot be pulled down by the second voltage source VSS, so that the seventh transistor T7 is turned on by the high potential of the fourth node n4, and the low potential voltage output by the second voltage source VSS pulls down the potential on the driving electrode 200 through the turned-on seventh transistor T7, so that the driving electrode 200 maintains a low voltage state and can solve the problem of low potential drift.

[0069] Please refer to Figure 9 , Figure 9 The module schematic diagram of the micro-fluidic device provided in the embodiment of the application.

[0070] The embodiment of the application further provides a micro-fluidic device 300. The micro-fluidic device 300 comprises a driving electrode 200 and a driving circuit 100, wherein the driving circuit 100 comprises the driving circuit 100 in any of the above-mentioned embodiments, and the driving circuit 100 is used for driving the driving electrode 200.

[0071] Specifically, the driving circuit 100 in the micro-fluidic device 300 of the application has a faster response speed, higher accuracy and stability, and can solve the problem of low potential drift, so that the liquid drops can be accurately and stably controlled by the driving electrode 200, the operation is simple, the failure rate of liquid drop control is reduced, and the control precision is improved.

[0072] Please refer to Figure 10 , Figure 10 The structure schematic diagram of the micro-fluidic device provided in the embodiment of the application.

[0073] In the embodiment of the application, the micro-fluidic device 300 comprises a first substrate 310 and a second substrate 320 arranged oppositely, and a channel 330 accommodating one or more liquid drops is formed between the first substrate 310 and the second substrate 320.

[0074] The first substrate 310 comprises a first substrate 311, a common electrode 312 and a first hydrophobic layer 313 arranged in sequence towards the second substrate 320.

[0075] The second substrate 320 comprises a second substrate 321, a driving circuit layer 322, the driving electrode 200, an insulating layer 324 and a second hydrophobic layer 325 which are sequentially stacked towards the first substrate 310. The insulating layer 324 covers the driving electrode 200. The driving circuit layer 322 comprises a plurality of driving circuits 100 arranged in an array, and the driving electrode 200 is arranged correspondingly to the driving circuit 100.

[0076] The channel 330 is located between the first hydrophobic layer 313 and the second hydrophobic layer 325.

[0077] Specifically, the microfluidic device 300 controls the droplets to enter the channel 330, and drives the driving electrode 200 to realize the generation, transfer, mixing and splitting of the droplets, and accurately and stably controls the droplets.

[0078] The above is only an embodiment of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation using the content of the specification and drawings, or direct or indirect application in other related technical fields, is also included in the patent protection scope of the present application.

Claims

1. A driving circuit for driving driving electrodes in a microfluidic device, characterized in that, include: A charging unit is connected to a data line and a first scan signal line. The first scan signal line is used to control the charging unit to be turned on or off, and when the charging unit is turned on, it outputs the data voltage on the data line. A first energy storage unit is connected to a first voltage source and the charging unit. The first energy storage unit is used to store the data voltage output by the charging unit when the charging unit is turned on. A driving unit is connected between the first voltage source and the driving electrode, and is connected to the charging unit and the first energy storage unit at a first node; A potential holding unit is connected between the driving unit and the driving electrode, and is also connected to a second voltage source; The potential holding unit is used to pull down the potential on the driving electrode by using the low potential voltage output by the second voltage source in the on state, so as to write a low potential to the driving electrode. The potential holding unit includes: The second transistor has a first terminal connected to the second voltage source and a second terminal connected to the driving electrode. The third transistor and the fourth transistor, the control terminal and the first terminal of the third transistor and the first terminal of the fourth transistor are all connected to the first voltage source; the second terminal of the third transistor and the control terminal of the fourth transistor are connected to the second node, and the second terminal of the fourth transistor and the control terminal of the second transistor are connected to the third node; The fifth transistor and the sixth transistor are connected to the second voltage source, the control terminals of the fifth transistor and the sixth transistor are connected to the first node, the second terminal of the fifth transistor is connected to the second node, and the second terminal of the sixth transistor is connected to the third node. Alternatively, the potential holding unit includes: A seventh transistor, wherein the first terminal of the seventh transistor is connected to the second voltage source, and the second terminal of the seventh transistor is connected to the driving electrode; The eighth transistor has its first terminal and control terminal connected to the first voltage source, and its second terminal is connected to the control terminal of the seventh transistor at the fourth node. The ninth transistor has its first terminal connected to the second voltage source, its second terminal connected to the fourth node, and its control terminal connected to the first node.

2. The driving circuit according to claim 1, characterized in that, The charging unit includes a tenth transistor, the first end of which is connected to the data line, the second end of which is connected to the first node, and the control end of which is connected to the first scan signal line.

3. The driving circuit according to claim 1, characterized in that, The charging unit includes multiple series-connected tenth transistors. The input terminals of the multiple series-connected tenth transistors are connected to the data line, the output terminals of the multiple series-connected tenth transistors are connected to the first node, and the control terminals of the multiple series-connected tenth transistors are all connected to the first scan signal line.

4. The driving circuit according to claim 1, characterized in that, The driving unit includes an eleventh transistor, the first terminal of which is connected to the first voltage source, the second terminal of which is connected to the driving electrode, and the control terminal of which is connected to the first node.

5. A microfluidic device, characterized in that, include: Drive electrode; A driving circuit, comprising the driving circuit of any one of claims 1 to 4, wherein the driving circuit is used to drive the driving electrode.

6. The microfluidic device according to claim 5, characterized in that, The microfluidic device includes: a first substrate and a second substrate disposed opposite to each other, and a channel for accommodating one or more droplets is formed between the first substrate and the second substrate; The first substrate includes a first substrate, a common electrode, and a first hydrophobic layer sequentially stacked facing the second substrate; The second substrate includes a second substrate, a driving circuit layer, a plurality of driving electrodes, an insulating layer, and a second hydrophobic layer, which are sequentially stacked facing the first substrate; wherein, the driving circuit layer includes a plurality of driving circuits arranged in an array, and the plurality of driving circuits are correspondingly connected to the plurality of driving electrodes; The channel is located between the first hydrophobic layer and the second hydrophobic layer.

7. A driving method for a driving circuit, characterized in that, The driving circuit includes the driving circuit of any one of claims 1 to 4, and the driving method includes: When a high potential is written to the driving electrode, the first scan signal line controls the charging unit to turn on, and the high potential data voltage output by the data line is output to the first node to control the driving unit to turn on. The first voltage source writes a high potential to the driving electrode through the turned-on driving unit. When the driving electrode is written with a low potential, the first scan signal line controls the charging unit to turn on, and the low potential data voltage output by the data line is output to the first node to control the driving unit to turn off and control the potential holding unit to turn on, so that the low potential voltage output by the second voltage source is used to pull down the potential on the driving electrode by the turned-on potential holding unit, so as to write a low potential to the driving electrode.

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