A power module

Abstract

The present invention discloses a power module comprising two half-bridge circuits. Multiple functions can be realized simply by changing the connection method of module terminals in an external circuit. When the first half-bridge positive electrode layer and the second half-bridge positive electrode layer are connected to different circuits, and the first half-bridge AC side electrode layer and the second half-bridge AC side electrode layer are connected via an external inductor, a four-switch BUCK-BOOST circuit function can be realized. When the first half-bridge positive electrode layer and the second half-bridge positive electrode layer are connected to the same signal, and the first half-bridge AC side electrode layer and the second half-bridge AC side electrode layer are also connected to the same external circuit, a half-bridge circuit function of two chips in parallel can be realized. This makes the power module more functional and has a wider range of application scenarios, solving the technical problem that traditional power modules can only realize a single circuit function and are difficult to apply in application scenarios with rich circuit function requirements.

Description

Technical Field

[0001] The present invention relates to the technical field of power electronics, and in particular to a power module. Background Art

[0002] With the rapid development of modern transportation, aerospace, new energy, and other fields, power electronics power modules (referred to as power modules) have been widely used, placing higher demands on the functionality and application range of power modules. However, traditional power modules generally only implement a single circuit function, making them difficult to use in applications requiring a wide range of circuit functions. Implementing additional circuit functions requires redesign and production, which is costly and has a limited scope of application. Therefore, how to integrate multiple circuit functions while maintaining the size of a single power module, so that the power module can achieve richer functionality, greater flexibility, and a wider range of applications, thereby reducing the production and development costs of power modules, is a technical problem that technical personnel in this field urgently need to solve. Summary of the Invention

[0003] The present invention provides a power module for solving the technical problem that traditional power modules can only realize a single circuit function and are difficult to be applied in application scenarios with rich circuit function requirements.

[0004] In view of this, the present invention provides a power module, comprising:

[0005] A first half-bridge upper arm switch chip, wherein the first half-bridge upper arm switch chip is provided with a first control terminal, a first input terminal and a first output terminal;

[0006] The first half-bridge upper arm parallel diode chip is provided with a second input end and a second output end;

[0007] A first half-bridge upper arm driving metal layer, wherein the first half-bridge upper arm driving metal layer is connected to the first control end;

[0008] A first half-bridge upper arm source electrode layer, wherein the first half-bridge upper arm source electrode layer is connected to the first output end;

[0009] a first half-bridge positive electrode layer, the first half-bridge positive electrode layer being connected to the first input terminal and the second input terminal respectively;

[0010] A first half-bridge lower arm switch chip, wherein the first half-bridge lower arm switch chip is provided with a third control terminal, a third input terminal and a third output terminal;

[0011] A diode chip connected in parallel to the lower arm of the first half bridge, wherein the diode chip connected in parallel to the lower arm of the first half bridge is provided with a fourth input end and a fourth output end;

[0012] A first half-bridge lower arm driving metal layer, wherein the first half-bridge lower arm driving metal layer is connected to the third control end;

[0013] a first half-bridge lower arm source electrode layer, wherein the first half-bridge lower arm source electrode layer is connected to the third output end;

[0014] a first half-bridge AC side electrode layer, the first half-bridge AC side electrode layer being connected to the first output end, the second output end, the third input end, and the fourth input end respectively;

[0015] A second half-bridge upper arm switch chip, wherein the second half-bridge upper arm switch chip is provided with a fifth control terminal, a fifth input terminal and a fifth output terminal;

[0016] A parallel diode chip connected to the upper arm of the second half bridge, wherein the parallel diode chip connected to the upper arm of the second half bridge is provided with a sixth input terminal and a sixth output terminal;

[0017] A second half-bridge upper arm driving metal layer, wherein the second half-bridge upper arm driving metal layer is connected to the fifth control terminal;

[0018] a source electrode layer of an upper arm of the second half bridge, wherein the source electrode layer of the upper arm of the second half bridge is connected to the fifth output terminal;

[0019] a second half-bridge positive electrode layer, the second half-bridge positive electrode layer being connected to the fifth input terminal and the sixth input terminal respectively;

[0020] A second half-bridge lower arm switch chip, wherein the second half-bridge lower arm switch chip is provided with a seventh control terminal, a seventh input terminal and a seventh output terminal;

[0021] A parallel diode chip connected to the lower arm of the second half bridge, wherein the parallel diode chip connected to the lower arm of the second half bridge is provided with an eighth input terminal and an eighth output terminal;

[0022] a second half-bridge lower arm driving metal layer, wherein the second half-bridge lower arm driving metal layer is connected to the seventh control terminal;

[0023] a second half-bridge lower arm source electrode layer, the second half-bridge lower arm source electrode layer being electrically connected to the seventh output terminal;

[0024] a second half-bridge AC side electrode layer, the second half-bridge AC side electrode layer being respectively connected to the fifth output terminal, the sixth output terminal, the seventh input terminal and the eighth input terminal;

[0025] a negative electrode layer, the negative electrode layer being connected to the third output terminal, the fourth output terminal, the seventh output terminal and the eighth output terminal respectively;

[0026] Substrate, first half-bridge upper arm switch chip, first half-bridge upper arm drive metal layer, first half-bridge upper arm source electrode layer, first half-bridge upper arm parallel diode chip, first half-bridge positive electrode layer, first half-bridge lower arm switch chip, first half-bridge lower arm drive metal layer, first half-bridge lower arm source electrode layer, first half-bridge lower arm parallel diode chip, first half-bridge AC side electrode layer, second half-bridge upper arm switch chip, second half-bridge upper arm drive metal layer, second half-bridge upper arm source electrode layer, second half-bridge upper arm parallel diode chip, second half-bridge positive electrode layer, second half-bridge lower arm switch chip, second half-bridge lower arm The driving metal layer, the source electrode layer of the lower arm of the second half bridge, the parallel diode chip of the lower arm of the second half bridge, the AC side electrode layer of the second half bridge, and the negative electrode layer are all arranged on the substrate, and the driving metal layer of the upper arm of the first half bridge, the source electrode layer of the upper arm of the first half bridge, the positive electrode layer of the first half bridge, the driving metal layer of the lower arm of the first half bridge, the source electrode layer of the lower arm of the first half bridge, the AC side electrode layer of the first half bridge, the driving metal layer of the upper arm of the second half bridge, the source electrode layer of the upper arm of the second half bridge, the positive electrode layer of the second half bridge, the driving metal layer of the lower arm of the second half bridge, the source electrode layer of the lower arm of the second half bridge, the AC side electrode layer of the second half bridge and the negative electrode layer are arranged on the same layer.

[0027] Optionally, the first half-bridge upper arm switch chip includes a first IGBT, the gate electrode of the first IGBT serves as the first control end of the first half-bridge upper arm switch chip and is electrically connected to the first half-bridge upper arm drive metal layer, the source of the first IGBT serves as the first output end of the first half-bridge upper arm switch chip and is electrically connected to the first half-bridge upper arm source electrode layer and the first half-bridge AC side electrode layer, and the drain of the first IGBT serves as the first input end of the first half-bridge upper arm switch chip and is electrically connected to the first half-bridge positive electrode layer.

[0028] Optionally, the first half-bridge lower arm switch chip includes a second IGBT, the gate electrode of the second IGBT serves as the third control terminal of the first half-bridge lower arm switch chip and is electrically connected to the first half-bridge lower arm drive metal layer, the source of the second IGBT serves as the third output terminal of the first half-bridge lower arm switch chip and is electrically connected to the negative electrode layer, and the drain of the second IGBT serves as the third input terminal of the first half-bridge lower arm switch chip and is electrically connected to the first half-bridge AC side electrode layer.

[0029] Optionally, the second half-bridge upper arm switch chip includes a third IGBT, the gate electrode of the third IGBT serves as the fifth control terminal of the second half-bridge upper arm switch chip and is electrically connected to the second half-bridge upper arm drive metal layer, the source of the third IGBT serves as the fifth output terminal of the second half-bridge upper arm switch chip and is electrically connected to the second half-bridge upper arm source electrode layer and the second half-bridge AC side electrode layer, and the drain of the third IGBT serves as the fifth input terminal of the second half-bridge upper arm switch chip and is electrically connected to the second half-bridge positive electrode layer.

[0030] Optionally, the second half-bridge lower arm switch chip includes a fourth IGBT, the gate electrode of the fourth IGBT serves as the seventh control terminal of the second half-bridge lower arm switch chip and is electrically connected to the second half-bridge lower arm drive metal layer, the source of the fourth IGBT serves as the seventh output terminal of the second half-bridge lower arm switch chip and is electrically connected to the negative electrode layer, and the drain of the fourth IGBT serves as the seventh input terminal of the second half-bridge lower arm switch chip and is electrically connected to the second half-bridge AC side electrode layer.

[0031] Optionally, the first half-bridge positive electrode layer and the second half-bridge positive electrode layer are arranged along the second direction and are symmetrical about the central axis in the first direction;

[0032] The first half-bridge AC side electrode layer, the second half-bridge AC side electrode layer and the negative electrode layer are arranged along the second direction and are symmetrical about the central axis in the first direction;

[0033] The first half-bridge upper arm source electrode layer, the first half-bridge upper arm driving metal layer, the second half-bridge upper arm source electrode layer, and the second half-bridge upper arm driving metal layer are arranged along the second direction and are symmetrical about the central axis of the first direction;

[0034] The first half-bridge lower arm source electrode layer, the first half-bridge lower arm driving metal layer, the second half-bridge lower arm source electrode layer, and the second half-bridge lower arm driving metal layer are arranged along the second direction and are symmetrical about the central axis of the first direction.

[0035] Optionally, the first half-bridge upper arm switch chip and the first half-bridge upper arm parallel diode chip are arranged on a side of the first half-bridge positive electrode layer facing away from the substrate;

[0036] The first half-bridge lower arm switch chip and the first half-bridge lower arm parallel diode chip are arranged on a side of the first half-bridge AC side electrode layer facing away from the substrate.

[0037] Optionally, the second half-bridge upper arm switch chip and the second half-bridge upper arm parallel diode chip are arranged on a side of the second half-bridge positive electrode layer facing away from the substrate;

[0038] The second half-bridge lower arm switch chip and the second half-bridge lower arm parallel diode chip are arranged on a side of the second half-bridge AC side electrode layer facing away from the substrate.

[0039] Optionally, it also includes:

[0040] a first connecting member, the first connecting member being electrically connected to the first output end of the first half-bridge upper arm switch chip, the second output end of the first half-bridge upper arm parallel diode chip, and the first half-bridge AC side electrode layer respectively;

[0041] a second connecting member, the second connecting member being electrically connected to the third output terminal of the first half-bridge lower arm switch chip, the fourth output terminal of the first half-bridge lower arm parallel diode chip, and the negative electrode layer respectively;

[0042] a third connecting member, the third connecting member being electrically connected to the fifth output terminal of the second half-bridge upper arm switch chip, the sixth output terminal of the second half-bridge upper arm parallel diode chip, and the second half-bridge AC side electrode layer respectively;

[0043] The fourth connecting member is electrically connected to the seventh output terminal of the second half-bridge lower arm switch chip, the eighth output terminal of the second half-bridge lower arm parallel diode chip and the negative electrode layer respectively.

[0044] Optionally, it further includes: a first terminal member, a second terminal member, a third terminal member, a fourth terminal member, a fifth terminal member, a sixth terminal member, a seventh terminal member, an eighth terminal member, a ninth terminal member, a tenth terminal member, an eleventh terminal member, a twelfth terminal member, and a thirteenth terminal member;

[0045] One end of the first terminal is electrically connected to the first half-bridge positive electrode layer, and the other end of the first terminal extends above the substrate;

[0046] One end of the second terminal is electrically connected to the AC-side electrode layer of the first half-bridge, and the other end of the second terminal extends above the substrate;

[0047] One end of the third terminal is electrically connected to the negative electrode layer, and the other end of the third terminal extends above the substrate;

[0048] One end of the fourth terminal is electrically connected to the second half-bridge AC-side electrode layer, and the other end of the fourth terminal extends above the substrate;

[0049] One end of the fifth terminal is electrically connected to the second half-bridge positive electrode layer, and the other end of the fifth terminal extends above the substrate;

[0050] One end of the sixth terminal is electrically connected to the source electrode layer of the upper arm of the first half bridge, and the other end of the sixth terminal extends above the substrate;

[0051] One end of the seventh terminal is electrically connected to the upper bridge arm driving metal layer of the first half bridge, and the other end of the seventh terminal extends above the substrate;

[0052] One end of the eighth terminal is electrically connected to the source electrode layer of the lower arm of the first half bridge, and the other end of the eighth terminal extends above the substrate;

[0053] One end of the ninth terminal is electrically connected to the lower bridge arm driving metal layer of the first half bridge, and the other end of the ninth terminal extends above the substrate;

[0054] One end of the tenth terminal is electrically connected to the lower arm driving metal layer of the second half bridge, and the other end of the tenth terminal extends above the substrate;

[0055] One end of the eleventh terminal is electrically connected to the source electrode layer of the lower arm of the second half bridge, and the other end of the eleventh terminal extends above the substrate;

[0056] One end of the twelfth terminal is electrically connected to the source electrode layer of the upper arm of the second half bridge, and the other end of the twelfth terminal extends above the substrate;

[0057] One end of the thirteenth terminal is electrically connected to the bridge arm driving metal layer of the second half bridge, and the other end of the thirteenth terminal extends above the substrate.

[0058] It can be seen from the above technical solutions that the power module provided by the present invention has the following advantages:

[0059] The power module provided by the present invention includes two half-bridge circuits and can achieve multiple functions simply by changing the connection method of the module terminals in the external circuit. The corresponding circuit of the first half-bridge is: the positive electrode layer of the first half-bridge - the switch chip of the first half-bridge upper arm, the parallel diode chip of the first half-bridge upper arm - the AC side electrode layer of the first half-bridge - the switch chip of the first half-bridge lower arm, the parallel diode chip of the first half-bridge lower arm - the negative electrode layer; the corresponding circuit of the second half-bridge is: the positive electrode layer of the second half-bridge - the switch chip of the second half-bridge upper arm, the parallel diode chip of the second half-bridge upper arm - the AC side electrode layer of the second half-bridge - the switch chip of the second half-bridge lower arm, the parallel diode chip of the second half-bridge lower arm - the negative electrode layer. When the positive electrode layer of the first half-bridge and the positive electrode layer of the second half-bridge are connected to different circuits, and the first half-bridge AC side electrode layer and the second half-bridge AC side electrode layer are connected through an external inductor, the four-switch BUCK-BOOST circuit function can be realized; when the positive electrode layer of the first half-bridge and the positive electrode layer of the second half-bridge are connected to the same signal, and the first half-bridge AC side electrode layer and the second half-bridge AC side electrode layer are also connected to the same external circuit, the half-bridge circuit function of two chips in parallel can be realized, making the power module more functional and the application scenarios more extensive, solving the technical problem that traditional power modules can only realize a single circuit function and are difficult to apply in application scenarios with rich circuit function requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0060] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying any creative work.

[0061] Figure 1A schematic structural diagram of a power module provided in an embodiment of the present invention;

[0062] Figure 2 A schematic structural diagram of a power module provided in an embodiment of the present invention;

[0063] Figure 3 The figure is a schematic diagram of the terminal installation structure of a power module provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0064] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.

[0065] For easier understanding, see Figure 1 The present invention provides an embodiment of a power module, comprising:

[0066] A first half-bridge upper arm switch chip (19), the first half-bridge upper arm switch chip (19) being provided with a first control end, a first input end, and a first output end;

[0067] A first half-bridge upper arm parallel diode chip (20), the first half-bridge upper arm parallel diode chip being provided with a second input end and a second output end;

[0068] A first half-bridge upper arm driving metal layer (2), the first half-bridge upper arm driving metal layer (2) being connected to the first control end;

[0069] A first half-bridge upper arm source electrode layer (1), the first half-bridge upper arm source electrode layer (1) being connected to the first output end;

[0070] a first half-bridge positive electrode layer (3), the first half-bridge positive electrode layer (3) being connected to the first input end and the second input end respectively;

[0071] A first half-bridge lower arm switch chip (17), the first half-bridge lower arm switch chip (17) being provided with a third control terminal, a third input terminal and a third output terminal;

[0072] The first half-bridge lower arm parallel diode chip (18) is provided with a fourth input end and a fourth output end;

[0073] A first half-bridge lower arm driving metal layer (14), wherein the first half-bridge lower arm driving metal layer (14) is connected to the third control end;

[0074] A first half-bridge lower arm source electrode layer (15), the first half-bridge lower arm source electrode layer (15) being connected to the third output end;

[0075] a first half-bridge AC side electrode layer (16), the first half-bridge AC side electrode layer (16) being respectively connected to the first output end, the second output end, the third input end, and the fourth input end;

[0076] A second half-bridge upper arm switch chip (7), the second half-bridge upper arm switch chip (7) being provided with a fifth control terminal, a fifth input terminal and a fifth output terminal;

[0077] The second half-bridge upper arm parallel diode chip (8) is provided with a sixth input terminal and a sixth output terminal;

[0078] The second half-bridge upper arm driving metal layer (5), the second half-bridge upper arm driving metal layer (5) is connected to the fifth control end;

[0079] A second half-bridge upper arm source electrode layer (6), the second half-bridge upper arm source electrode layer (6) being connected to the fifth output terminal;

[0080] a second half-bridge positive electrode layer (4), the second half-bridge positive electrode layer (4) being connected to the fifth input terminal and the sixth input terminal respectively;

[0081] A second half-bridge lower arm switch chip (11), the second half-bridge lower arm switch chip (11) being provided with a seventh control terminal, a seventh input terminal and a seventh output terminal;

[0082] The second half-bridge lower arm parallel diode chip (10) is provided with an eighth input terminal and an eighth output terminal;

[0083] A second half-bridge lower arm driving metal layer (13), the second half-bridge lower arm driving metal layer (13) being connected to the seventh control terminal;

[0084] A second half-bridge lower arm source electrode layer (12), the second half-bridge lower arm source electrode layer (12) being electrically connected to the seventh output terminal;

[0085] a second half-bridge AC side electrode layer (9), the second half-bridge AC side electrode layer (9) being respectively connected to the fifth output terminal, the sixth output terminal, the seventh input terminal, and the eighth input terminal;

[0086] A negative electrode layer (21), the negative electrode layer (21) is connected to the third output terminal, the fourth output terminal, the seventh output terminal and the eighth output terminal respectively;

[0087] Substrate (22), first half-bridge upper arm switch chip (19), first half-bridge upper arm drive metal layer (2), first half-bridge upper arm source electrode layer (1), first half-bridge upper arm parallel diode chip (20), first half-bridge positive electrode layer (3), first half-bridge lower arm switch chip (17), first half-bridge lower arm drive metal layer (14), first half-bridge lower arm source electrode layer (15), first half-bridge lower arm parallel diode chip (18), first half-bridge AC side electrode layer (16), second half-bridge upper arm switch chip (7), second half-bridge upper arm drive metal layer (5), second half-bridge upper arm source electrode layer (6), second half-bridge upper arm parallel diode chip (8), second half-bridge positive electrode layer (4), second half-bridge lower arm switch chip (11), second half-bridge lower arm drive metal layer The first half-bridge upper arm driving metal layer (2), the first half-bridge upper arm source electrode layer (1), the first half-bridge positive electrode layer (3), the first half-bridge lower arm driving metal layer (14), the first half-bridge lower arm source electrode layer (15), the first half-bridge AC side electrode layer (16), the second half-bridge upper arm driving metal layer (5), the second half-bridge upper arm source electrode layer (6), the second half-bridge positive electrode layer (4), the second half-bridge lower arm driving metal layer (13), the second half-bridge lower arm source electrode layer (12), the second half-bridge AC side electrode layer (9) and the negative electrode layer (21) are arranged on the same layer.

[0088] In the embodiment of the present invention, the corresponding circuit of the first half bridge is: the first half bridge positive electrode layer (3) - the first half bridge upper arm switch chip (19), the first half bridge upper arm parallel diode chip (20) - the first half bridge AC side electrode layer (16) - the first half bridge lower arm switch chip (17), the first half bridge lower arm parallel diode chip (18) - the negative electrode layer (21); the corresponding circuit of the second half bridge is: the second half bridge positive electrode layer (4) - the second half bridge upper arm switch chip (7), the second half bridge upper arm parallel diode chip (8) - the second half bridge AC side electrode layer (9) - the second half bridge lower arm switch chip (11), the second half bridge lower arm parallel diode chip (10) - the negative electrode layer (21). When the first half-bridge positive electrode layer (3) and the second half-bridge positive electrode layer (4) are connected to different circuits, and the first half-bridge AC side electrode layer (16) and the second half-bridge AC side electrode layer (9) are connected via an external inductor, this embodiment can realize the four-switch BUCK-BOOST circuit function; when the first half-bridge positive electrode layer (3) and the second half-bridge positive electrode layer (4) are connected to the same signal, and the first half-bridge AC side electrode layer (16) and the second half-bridge AC side electrode layer (9) are also connected to the same external circuit, this embodiment can realize the half-bridge circuit function of two chips in parallel, making the power module more functional and the application scenarios more extensive.

[0089] In one application scenario, the first half-bridge upper arm switch chip (19) may include a first IGBT, the gate electrode of the first IGBT serving as the first control terminal of the first half-bridge upper arm switch chip (19) being electrically connected to the first half-bridge upper arm drive metal layer (2), the source of the first IGBT serving as the first output terminal of the first half-bridge upper arm switch chip (19) being electrically connected to the first half-bridge upper arm source electrode layer (1) and the first half-bridge AC side electrode layer (16), and the drain of the first IGBT serving as the first input terminal of the first half-bridge upper arm switch chip (19) being electrically connected to the first half-bridge positive electrode layer (3). The first half-bridge lower arm switch chip (17) may include a second IGBT, a gate electrode of the second IGBT serving as a third control terminal of the first half-bridge lower arm switch chip (17) electrically connected to the first half-bridge lower arm drive metal layer (14), a source electrode of the second IGBT serving as a third output terminal of the first half-bridge lower arm switch chip (17) electrically connected to the negative electrode layer (21), and a drain electrode of the second IGBT serving as a third input terminal of the first half-bridge lower arm switch chip (17) electrically connected to the first half-bridge AC side electrode layer (16). The second half-bridge upper arm switch chip (7) may include a third IGBT, wherein the gate electrode of the third IGBT serves as the fifth control terminal of the second half-bridge upper arm switch chip (7) and is electrically connected to the second half-bridge upper arm drive metal layer (5), the source electrode of the third IGBT serves as the fifth output terminal of the second half-bridge upper arm switch chip (7) and is electrically connected to the second half-bridge upper arm source electrode layer (6) and the second half-bridge AC side electrode layer (9), and the drain electrode of the third IGBT serves as the fifth input terminal of the second half-bridge upper arm switch chip (7) and is electrically connected to the second half-bridge positive electrode layer (4). The second half-bridge lower arm switch chip (11) may include a fourth IGBT, a gate electrode of the fourth IGBT serving as the seventh control terminal of the second half-bridge lower arm switch chip (11) electrically connected to the second half-bridge lower arm drive metal layer (13), a source electrode of the fourth IGBT serving as the seventh output terminal of the second half-bridge lower arm switch chip (11) electrically connected to the negative electrode layer (21), and a drain electrode of the fourth IGBT serving as the seventh input terminal of the second half-bridge lower arm switch chip (11) electrically connected to the second half-bridge AC side electrode layer (9).

[0090] In other application scenarios, other switching tubes can be used instead of IGBT devices, such as triodes or MOS tubes.

[0091] In one embodiment, the first half-bridge positive electrode layer (3) and the second half-bridge positive electrode layer (4) are arranged along the second direction and are symmetrical about the central axis of the first direction; the first half-bridge AC side electrode layer (16), the second half-bridge AC side electrode layer (9) and the negative electrode layer (21) are arranged along the second direction and are symmetrical about the central axis of the first direction; the first half-bridge upper arm source electrode layer (1), the first half-bridge upper arm driving metal layer (2), the second half-bridge upper arm source electrode layer (6), and the second half-bridge upper arm driving metal layer (5) are arranged along the second direction and are symmetrical about the central axis of the first direction; the first half-bridge lower arm source electrode layer (15), the first half-bridge lower arm driving metal layer (14), the second half-bridge lower arm source electrode layer (12), and the second half-bridge lower arm driving metal layer (13) are arranged along the second direction and are symmetrical about the central axis of the first direction.

[0092] In one embodiment, the first half-bridge upper arm switch chip (19) and the first half-bridge upper arm parallel diode chip (20) are arranged on the side of the first half-bridge positive electrode layer (3) facing away from the substrate (22); the first half-bridge lower arm switch chip (17) and the first half-bridge lower arm parallel diode chip (18) are arranged on the side of the first half-bridge AC side electrode layer (16) facing away from the substrate (22). The second half-bridge upper arm switch chip (7) and the second half-bridge upper arm parallel diode chip (8) are arranged on the side of the second half-bridge positive electrode layer (4) facing away from the substrate (22); the second half-bridge lower arm switch chip (11) and the second half-bridge lower arm parallel diode chip (10) are arranged on the side of the second half-bridge AC side electrode layer (9) facing away from the substrate (22).

[0093] like Figure 2As shown, the power module further includes: a first connector (24), the first connector (24) being electrically connected to the first output end of the first half-bridge upper arm switch chip (19), the second output end of the first half-bridge upper arm parallel diode chip (20), and the first half-bridge AC side electrode layer (16). A second connector (23), the second connector (23) being electrically connected to the third output end of the first half-bridge lower arm switch chip (17), the fourth output end of the first half-bridge lower arm parallel diode chip (18), and the negative electrode layer (21). A third connector (41), the third connector (41) being electrically connected to the fifth output end of the second half-bridge upper arm switch chip (7), the sixth output end of the second half-bridge upper arm parallel diode chip (8), and the second half-bridge AC side electrode layer (9). The fourth connector (42) is electrically connected to the seventh output terminal of the second half-bridge lower arm switch chip (11), the eighth output terminal of the second half-bridge lower arm parallel diode chip (10), and the negative electrode layer (21). The first connector (24), the second connector (23), the third connector (41), and the fourth connector (42) can be power bonding wires. The first connector (24), the second connector (23), the third connector (41), and the fourth connector (42) all include multiple source power bonding wires to improve electrical performance. The first connector (24), the second connector (23), the third connector (41), and the fourth connector (42) can also be metal sheets to improve electrical performance.

[0094] The first half-bridge upper arm driving metal layer (2) is electrically connected to the first control end of the first half-bridge upper arm switch chip (19) through a connecting member (such as a bonding wire, etc.), providing a driving signal for the first control end of the first half-bridge upper arm switch chip (19); the first half-bridge upper arm source electrode layer (1) is electrically connected to the first output end of the first half-bridge upper arm switch chip (19) through a connecting member (such as a bonding wire, etc.) to form a Kelvin source; the first half-bridge lower arm driving metal layer (14) is electrically connected to the third control end of the first half-bridge lower arm switch chip (17) through a connecting member (such as a bonding wire, etc.), providing a driving signal for the third control end of the first half-bridge lower arm switch chip (17); the first half-bridge lower arm source electrode layer (15) is electrically connected to the third output end of the first half-bridge lower arm switch chip (17) through a connecting member (such as a bonding wire, etc.) to form a Kelvin source. The second half-bridge upper arm driving metal layer (5) is electrically connected to the fifth control terminal of the second half-bridge upper arm switch chip (7) through a connecting member (such as a bonding wire, etc.), providing a driving signal for the fifth control terminal of the second half-bridge upper arm switch chip (7); the second half-bridge upper arm source electrode layer (6) is electrically connected to the fifth output terminal of the second half-bridge upper arm switch chip (7) through a connecting member (such as a bonding wire, etc.) to form a Kelvin source; the second half-bridge lower arm driving metal layer (13) is electrically connected to the seventh control terminal of the second half-bridge lower arm switch chip (11) through a connecting member (such as a bonding wire, etc.), providing a driving signal for the seventh control terminal of the second half-bridge lower arm switch chip (11); the second half-bridge lower arm source electrode layer (12) is electrically connected to the seventh output terminal of the second half-bridge lower arm switch chip (11) through a connecting member (such as a bonding wire, etc.) to form a Kelvin source.

[0095] In one embodiment, Figure 3As shown, the power module may further include a first terminal (27), a second terminal (35), a third terminal (36), a fourth terminal (30), a fifth terminal (28), a sixth terminal (25), a seventh terminal (26), an eighth terminal (34), a ninth terminal (33), a tenth terminal (32), an eleventh terminal (31), a twelfth terminal (37) and a thirteenth terminal (29); wherein one end of the first terminal (27) is electrically connected to the first half-bridge positive electrode layer (3), and the other end of the first terminal (27) extends above the substrate (22) to realize the first half-bridge positive electrode layer (3) from the power module The first half-bridge AC side electrode layer (16) is electrically connected to the first half-bridge AC side electrode layer (16), and the other end of the second terminal member (35) extends above the substrate (22) to enable the first half-bridge AC side electrode layer (16) to access the electrical signal from the outside of the power module; the first half-bridge AC side electrode layer (16) is electrically connected to the first half-bridge AC side electrode layer (16), and the other end of the third terminal member (36) extends above the substrate (22) to enable the negative electrode layer (21) to access the electrical signal from the outside of the power module; the first half-bridge AC side electrode layer (16) is electrically connected to the first half-bridge AC side electrode layer (16), and the other end of the third terminal member (36) extends above the substrate (22) to enable the negative electrode layer (21) to access the electrical signal from the outside of the power module; the first half-bridge AC side electrode layer (16) is electrically connected to the first half-bridge AC side electrode layer (16), and the other end of the fourth terminal member (30 ... The first half-bridge AC side electrode layer (9) is connected to the power module by a first terminal (25) and a second half-bridge positive electrode layer (4). The first half-bridge AC side electrode layer (9) is connected to the power module by a first terminal (25) and a second half-bridge positive electrode layer (4). The second half-bridge positive electrode layer (4) is connected to the power module by a first terminal (25) and a second half-bridge positive electrode layer (4). The first half-bridge AC side electrode layer (9) is connected to the power module by a first terminal (25) and a second half-bridge positive electrode layer (4). The first half-bridge AC side electrode layer (9) is connected to the power module by a first terminal (25) and a second half-bridge positive electrode layer (4). The first half-bridge AC side electrode layer (9) is connected to the power module by a first terminal (25) and a second half-bridge positive electrode layer (4). One end of the seventh terminal (26) is electrically connected to the first half-bridge upper arm driving metal layer (2), and the other end of the seventh terminal (26) extends above the substrate (22) to enable the first half-bridge upper arm driving metal layer (2) to access the upper arm driving signal from the outside of the power module, providing the first control end driving signal of the first half-bridge upper arm switch chip (19); one end of the eighth terminal (34) is electrically connected to the first half-bridge lower arm source electrode layer (15), and the other end of the eighth terminal (34) extends above the substrate (22) to enable the first half-bridge lower arm source electrode layer (15) to be connected to the outside of the power module to form a Kelvin source;One end of the ninth terminal (33) is electrically connected to the first half-bridge lower arm driving metal layer (14), and the other end of the ninth terminal (33) extends above the substrate (22), so as to realize that the first half-bridge lower arm driving metal layer (14) is connected to the lower arm driving signal from the outside of the power module, and provides the first half-bridge lower arm switch chip (17) with a third control end driving signal; one end of the twelfth terminal (37) is electrically connected to the second half-bridge upper arm source electrode layer (6), and the other end of the twelfth terminal (37) extends above the substrate (22), so as to realize that the second half-bridge upper arm source electrode layer (6) is connected to the outside of the power module to form a Kelvin source; one end of the thirteenth terminal (29) is electrically connected to the second half-bridge upper arm driving metal layer (5), and the other end of the thirteenth terminal (29) extends above the substrate (22), so as to realize that the second half-bridge upper arm source electrode layer (6) is connected to the outside of the power module to form a Kelvin source; The second half-bridge upper arm driving metal layer (5) is connected to the upper arm driving signal from the outside of the power module, and the fifth control terminal driving signal is provided to the second half-bridge upper arm switch chip (7); one end of the eleventh terminal (31) is electrically connected to the second half-bridge lower arm source electrode layer (12), and the other end of the eleventh terminal (31) extends above the substrate (22) to realize the second half-bridge lower arm source electrode layer (12) is connected to the outside of the power module to form a Kelvin source; one end of the tenth terminal (32) is electrically connected to the second half-bridge lower arm driving metal layer (13), and the other end of the tenth terminal (32) extends above the substrate (22) to realize the second half-bridge lower arm driving metal layer (13) is connected to the lower arm driving signal from the outside of the power module, and the seventh control terminal driving signal is provided to the second half-bridge lower arm switch chip (11).

[0096] The first terminal (27), the second terminal (35), the third terminal (36), the fourth terminal (30), the fifth terminal (28), the sixth terminal (25), the seventh terminal (26), the eighth terminal (34), the ninth terminal (33), the tenth terminal (32), the eleventh terminal (31), the twelfth terminal (37) and the thirteenth terminal (29) are all led out to the upper side of the substrate (22) (away from the side of the substrate), so as to facilitate the connection between the power module and the circuit board carrying the power module and shorten the connection path between the two.

[0097] The power module provided by the present invention includes two half-bridge circuits and can achieve multiple functions simply by changing the connection method of the module terminals in the external circuit. The corresponding circuit of the first half-bridge is: the positive electrode layer of the first half-bridge - the switch chip of the first half-bridge upper arm, the parallel diode chip of the first half-bridge upper arm - the AC side electrode layer of the first half-bridge - the switch chip of the first half-bridge lower arm, the parallel diode chip of the first half-bridge lower arm - the negative electrode layer; the corresponding circuit of the second half-bridge is: the positive electrode layer of the second half-bridge - the switch chip of the second half-bridge upper arm, the parallel diode chip of the second half-bridge upper arm - the AC side electrode layer of the second half-bridge - the switch chip of the second half-bridge lower arm, the parallel diode chip of the second half-bridge lower arm - the negative electrode layer. When the positive electrode layer of the first half-bridge and the positive electrode layer of the second half-bridge are connected to different circuits, and the first half-bridge AC side electrode layer and the second half-bridge AC side electrode layer are connected through an external inductor, the four-switch BUCK-BOOST circuit function can be realized; when the positive electrode layer of the first half-bridge and the positive electrode layer of the second half-bridge are connected to the same signal, and the first half-bridge AC side electrode layer and the second half-bridge AC side electrode layer are also connected to the same external circuit, the half-bridge circuit function of two chips in parallel can be realized, making the power module more functional and the application scenarios more extensive, solving the technical problem that traditional power modules can only realize a single circuit function and are difficult to apply in application scenarios with rich circuit function requirements.

[0098] In the description of the embodiments of the present invention, it should be noted that, unless otherwise specified or limited, the terms "connected" and "connection" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; and direct connections or indirect connections through an intermediary. Those skilled in the art will understand the specific meanings of the above terms in the embodiments of the present invention based on the specific circumstances.

[0099] The terms "first," "second," "third," "fourth," and so forth, as used herein (if present), are used to distinguish similar objects and are not necessarily used to describe a particular order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that, for example, the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "including" and "having," and any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus comprising a series of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, product, or apparatus.

[0100] As described above, the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that the technical solutions described in the above embodiments can still be modified, or some of the technical features thereof can be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A power module, characterized in that: include: A first half-bridge upper arm switch chip, wherein the first half-bridge upper arm switch chip is provided with a first control terminal, a first input terminal and a first output terminal; The first half-bridge upper arm parallel diode chip is provided with a second input end and a second output end; A first half-bridge upper arm driving metal layer, wherein the first half-bridge upper arm driving metal layer is connected to the first control end; A first half-bridge upper arm source electrode layer, wherein the first half-bridge upper arm source electrode layer is connected to the first output end; a first half-bridge positive electrode layer, the first half-bridge positive electrode layer being connected to the first input terminal and the second input terminal respectively; A first half-bridge lower arm switch chip, wherein the first half-bridge lower arm switch chip is provided with a third control terminal, a third input terminal and a third output terminal; A diode chip connected in parallel to the lower arm of the first half bridge, wherein the diode chip connected in parallel to the lower arm of the first half bridge is provided with a fourth input end and a fourth output end; A first half-bridge lower arm driving metal layer, wherein the first half-bridge lower arm driving metal layer is connected to the third control end; a first half-bridge lower arm source electrode layer, the first half-bridge lower arm source electrode layer being connected to the third output end; a first half-bridge AC side electrode layer, the first half-bridge AC side electrode layer being connected to the first output end, the second output end, the third input end, and the fourth input end respectively; A second half-bridge upper arm switch chip, wherein the second half-bridge upper arm switch chip is provided with a fifth control terminal, a fifth input terminal and a fifth output terminal; A parallel diode chip connected to the upper arm of the second half bridge, wherein the parallel diode chip connected to the upper arm of the second half bridge is provided with a sixth input terminal and a sixth output terminal; A second half-bridge upper arm driving metal layer, wherein the second half-bridge upper arm driving metal layer is connected to the fifth control terminal; a source electrode layer of an upper arm of the second half bridge, wherein the source electrode layer of the upper arm of the second half bridge is connected to the fifth output terminal; a second half-bridge positive electrode layer, the second half-bridge positive electrode layer being connected to the fifth input terminal and the sixth input terminal respectively; A second half-bridge lower arm switch chip, wherein the second half-bridge lower arm switch chip is provided with a seventh control terminal, a seventh input terminal and a seventh output terminal; A parallel diode chip connected to the lower arm of the second half bridge, wherein the parallel diode chip connected to the lower arm of the second half bridge is provided with an eighth input terminal and an eighth output terminal; a second half-bridge lower arm driving metal layer, wherein the second half-bridge lower arm driving metal layer is connected to the seventh control terminal; a second half-bridge lower arm source electrode layer, the second half-bridge lower arm source electrode layer being electrically connected to the seventh output terminal; a second half-bridge AC side electrode layer, the second half-bridge AC side electrode layer being respectively connected to the fifth output terminal, the sixth output terminal, the seventh input terminal and the eighth input terminal; a negative electrode layer, the negative electrode layer being connected to the third output terminal, the fourth output terminal, the seventh output terminal and the eighth output terminal respectively; Substrate, first half-bridge upper arm switch chip, first half-bridge upper arm drive metal layer, first half-bridge upper arm source electrode layer, first half-bridge upper arm parallel diode chip, first half-bridge positive electrode layer, first half-bridge lower arm switch chip, first half-bridge lower arm drive metal layer, first half-bridge lower arm source electrode layer, first half-bridge lower arm parallel diode chip, first half-bridge AC side electrode layer, second half-bridge upper arm switch chip, second half-bridge upper arm drive metal layer, second half-bridge upper arm source electrode layer, second half-bridge upper arm parallel diode chip, second half-bridge positive electrode layer, second half-bridge lower arm switch chip, second half-bridge lower arm The driving metal layer, the source electrode layer of the lower arm of the second half bridge, the parallel diode chip of the lower arm of the second half bridge, the AC side electrode layer of the second half bridge, and the negative electrode layer are all arranged on the substrate, and the driving metal layer of the upper arm of the first half bridge, the source electrode layer of the upper arm of the first half bridge, the positive electrode layer of the first half bridge, the driving metal layer of the lower arm of the first half bridge, the source electrode layer of the lower arm of the first half bridge, the AC side electrode layer of the first half bridge, the driving metal layer of the upper arm of the second half bridge, the source electrode layer of the upper arm of the second half bridge, the positive electrode layer of the second half bridge, the driving metal layer of the lower arm of the second half bridge, the source electrode layer of the lower arm of the second half bridge, the AC side electrode layer of the second half bridge and the negative electrode layer are arranged on the same layer.

2. The power module according to claim 1, wherein: The first half-bridge upper arm switch chip includes a first IGBT, the gate electrode of the first IGBT serves as the first control end of the first half-bridge upper arm switch chip and is electrically connected to the first half-bridge upper arm drive metal layer, the source of the first IGBT serves as the first output end of the first half-bridge upper arm switch chip and is electrically connected to the first half-bridge upper arm source electrode layer and the first half-bridge AC side electrode layer, and the drain of the first IGBT serves as the first input end of the first half-bridge upper arm switch chip and is electrically connected to the first half-bridge positive electrode layer.

3. The power module according to claim 2, wherein: The first half-bridge lower arm switch chip includes a second IGBT, the gate electrode of the second IGBT serves as the third control terminal of the first half-bridge lower arm switch chip and is electrically connected to the first half-bridge lower arm drive metal layer, the source of the second IGBT serves as the third output terminal of the first half-bridge lower arm switch chip and is electrically connected to the negative electrode layer, and the drain of the second IGBT serves as the third input terminal of the first half-bridge lower arm switch chip and is electrically connected to the first half-bridge AC side electrode layer.

4. The power module according to claim 3, wherein: The second half-bridge upper arm switch chip includes a third IGBT, the gate electrode of the third IGBT serves as the fifth control terminal of the second half-bridge upper arm switch chip and is electrically connected to the second half-bridge upper arm drive metal layer, the source of the third IGBT serves as the fifth output terminal of the second half-bridge upper arm switch chip and is electrically connected to the second half-bridge upper arm source electrode layer and the second half-bridge AC side electrode layer, and the drain of the third IGBT serves as the fifth input terminal of the second half-bridge upper arm switch chip and is electrically connected to the second half-bridge positive electrode layer.

5. The power module according to claim 4, characterized in that: The second half-bridge lower arm switch chip includes a fourth IGBT, the gate electrode of the fourth IGBT serves as the seventh control terminal of the second half-bridge lower arm switch chip and is electrically connected to the second half-bridge lower arm drive metal layer, the source of the fourth IGBT serves as the seventh output terminal of the second half-bridge lower arm switch chip and is electrically connected to the negative electrode layer, and the drain of the fourth IGBT serves as the seventh input terminal of the second half-bridge lower arm switch chip and is electrically connected to the second half-bridge AC side electrode layer.

6. The power module according to claim 1, wherein: The first half-bridge positive electrode layer and the second half-bridge positive electrode layer are arranged along the second direction and are symmetrical about the central axis in the first direction; The first half-bridge AC side electrode layer, the second half-bridge AC side electrode layer and the negative electrode layer are arranged along the second direction and are symmetrical about the central axis in the first direction; The first half-bridge upper arm source electrode layer, the first half-bridge upper arm driving metal layer, the second half-bridge upper arm source electrode layer, and the second half-bridge upper arm driving metal layer are arranged along the second direction and are symmetrical about the central axis of the first direction; The first half-bridge lower arm source electrode layer, the first half-bridge lower arm driving metal layer, the second half-bridge lower arm source electrode layer, and the second half-bridge lower arm driving metal layer are arranged along the second direction and are symmetrical about the central axis of the first direction.

7. The power module according to claim 1, wherein: The first half-bridge upper arm switch chip and the first half-bridge upper arm parallel diode chip are arranged on a side of the first half-bridge positive electrode layer facing away from the substrate; The first half-bridge lower arm switch chip and the first half-bridge lower arm parallel diode chip are arranged on a side of the first half-bridge AC side electrode layer facing away from the substrate.

8. The power module according to claim 7, characterized in that: The second half-bridge upper arm switch chip and the second half-bridge upper arm parallel diode chip are arranged on a side of the second half-bridge positive electrode layer facing away from the substrate; The second half-bridge lower arm switch chip and the second half-bridge lower arm parallel diode chip are arranged on a side of the second half-bridge AC side electrode layer facing away from the substrate.

9. The power module according to claim 1, wherein: Also includes: a first connecting member, the first connecting member being electrically connected to the first output end of the first half-bridge upper arm switch chip, the second output end of the first half-bridge upper arm parallel diode chip, and the first half-bridge AC side electrode layer respectively; a second connecting member, the second connecting member being electrically connected to the third output terminal of the first half-bridge lower arm switch chip, the fourth output terminal of the first half-bridge lower arm parallel diode chip, and the negative electrode layer respectively; a third connecting member, the third connecting member being electrically connected to the fifth output terminal of the second half-bridge upper arm switch chip, the sixth output terminal of the second half-bridge upper arm parallel diode chip, and the second half-bridge AC side electrode layer respectively; The fourth connecting member is electrically connected to the seventh output terminal of the second half-bridge lower arm switch chip, the eighth output terminal of the second half-bridge lower arm parallel diode chip and the negative electrode layer respectively.

10. The power module according to claim 1, wherein: Also includes: a first terminal, a second terminal, a third terminal, a fourth terminal, a fifth terminal, a sixth terminal, a seventh terminal, an eighth terminal, a ninth terminal, a tenth terminal, an eleventh terminal, a twelfth terminal, and a thirteenth terminal; One end of the first terminal is electrically connected to the first half-bridge positive electrode layer, and the other end of the first terminal extends above the substrate; One end of the second terminal is electrically connected to the AC-side electrode layer of the first half-bridge, and the other end of the second terminal extends above the substrate; One end of the third terminal is electrically connected to the negative electrode layer, and the other end of the third terminal extends above the substrate; One end of the fourth terminal is electrically connected to the AC-side electrode layer of the second half-bridge, and the other end of the fourth terminal extends above the substrate; One end of the fifth terminal is electrically connected to the second half-bridge positive electrode layer, and the other end of the fifth terminal extends above the substrate; One end of the sixth terminal is electrically connected to the source electrode layer of the upper arm of the first half bridge, and the other end of the sixth terminal extends above the substrate; One end of the seventh terminal is electrically connected to the upper bridge arm driving metal layer of the first half bridge, and the other end of the seventh terminal extends above the substrate; One end of the eighth terminal is electrically connected to the source electrode layer of the lower arm of the first half bridge, and the other end of the eighth terminal extends above the substrate; One end of the ninth terminal is electrically connected to the lower bridge arm driving metal layer of the first half bridge, and the other end of the ninth terminal extends above the substrate; One end of the tenth terminal is electrically connected to the lower arm driving metal layer of the second half bridge, and the other end of the tenth terminal extends above the substrate; One end of the eleventh terminal is electrically connected to the source electrode layer of the lower arm of the second half bridge, and the other end of the eleventh terminal extends above the substrate; One end of the twelfth terminal is electrically connected to the source electrode layer of the upper arm of the second half bridge, and the other end of the twelfth terminal extends above the substrate; One end of the thirteenth terminal is electrically connected to the bridge arm driving metal layer of the second half bridge, and the other end of the thirteenth terminal extends above the substrate.

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