A method for optimizing photolithography parameters
By obtaining the exposure inherent deviation of the reference products on the same platform and calculating the complement of the target product's engraving accuracy, the problem of unstable engraving accuracy in the lithography process is solved, and the rationality and production stability of OVL control are improved. .
Patent Information
- Application Number
- CN202410917201.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-10
- Publication Date
- 2024-12-27
- Estimated Expiration
- 2044-07-10
AI Technical Summary
The existing lithography process has instability in the control of the intercalation accuracy of new products, resulting in frequent heavy industry, affecting production time and chip performance, especially because the inherent deviation of the photocoat cannot be effectively included in the complement value calculation, resulting in OVL over-spec or Apply specifications.
By obtaining the exposure inherent deviations of the reference products on the same platform and the inherent deviations of the photocoat, establishing an APC system database, calculating the value of the target product's intercalation accuracy, and OVL complementing the value based on the deviations caused by the photocoat manufacturing, ensuring more reasonable calculation and control .
It reduces the impact of the instability of the mask production on OVL, improves the intercalation accuracy, reduces the frequency of heavy industry, and ensures production stability and chip performance.
Smart Images
Figure CN118466138B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to a process technology in the field of semiconductors, and in particular to a parameter optimization method for a photolithography process. Background Art
[0002] As the core process of semiconductor manufacturing technology, photolithography is the driving force for the development of semiconductor chip manufacturing technology. The ever-shrinking process size places high demands on overlay accuracy (OVL for short). At the same time, for the key process layers of some products, an overlay deviation of 2nm~3nm may cause chip performance degradation or even failure.
[0003] For the OVL control of new products (NTO), the industry usually adopts the following approach: obtain the OVL compensation value of the reference product on the same platform (for example, the same process technology platform, such as 55nm HV or 55nm LV, etc.), and directly compensate the OVL compensation value of the reference product on the same platform to the NTO. This compensation method often results in the OVL of the produced NTO exceeding the specification or being within the specification (OVL tends to the upper or lower limit of the specification). This makes the OVL control of the NTO unstable during the pilot run of the NTO, that is, rework is required for the NTO that exceeds the specification. However, since the current NTO usually has more layers, if rework occurs frequently, this will cause the NTO production time to be long and the delivery time to be delayed. For the NTO that is within the specification, it will affect the electrical properties and yield of the chip with high process requirements. Summary of the invention
[0004] The object of the present invention is to provide a method for optimizing photolithography parameters, which can improve the overlay accuracy of a target product.
[0005] In order to solve the above problems, the present invention provides a method for optimizing photolithography parameters, comprising the following steps:
[0006] Obtaining the exposure inherent deviation of the reference product on the same platform at the preset layer, and obtaining the mask inherent deviation of the target product at the preset layer;
[0007] According to the exposure inherent deviation of the reference product on the same platform at the preset layer and the mask inherent deviation of the target product at the preset layer, an overlay accuracy compensation value of the target product is obtained.
[0008] Optionally, a specific method for obtaining the exposure inherent deviation of the reference product on the same platform at a preset layer and the mask inherent deviation of the target product at a preset layer is:
[0009] A database of the APC system is established, wherein the database collects the overlay accuracy compensation value of the reference product on the same platform at the preset layer, the inherent deviation of the mask of the reference product on the same platform at the preset layer, and the inherent deviation of the mask of the target product at the preset layer.
[0010] Furthermore, the target product is a new product that needs to be trial-produced, and the target product and the reference product on the same platform are products of the same process technology platform.
[0011] Furthermore, the overlay accuracy compensation value 5QC1 of the same platform reference product at the preset layer satisfies the following formula:
[0012] 5QC1=BSL+OVL1;
[0013] Among them, BSL is the exposure inherent deviation of the reference product on the same platform at the preset layer; OVL1 is the mask inherent deviation of the reference product on the same platform at the preset layer.
[0014] Furthermore, the overlay accuracy compensation value 5QC2 of the target product at the preset layer satisfies the following formula:
[0015] 5QC2=BSL+OVL2;
[0016] 5QC2= 5QC1- OVL1+ OVL2;
[0017] Among them, BSL is the exposure inherent deviation of the reference product on the same platform at the preset layer; OVL1 is the mask inherent deviation of the reference product on the same platform at the preset layer; 5QC1 is the overlay accuracy compensation value of the reference product on the same platform at the preset layer.
[0018] Furthermore, if the preset layer is the first layer, BSL is the exposure inherent deviation of the reference product on the same platform on the first layer; OVL1 is the mask inherent deviation of the reference product on the same platform on the first layer; 5QC1 is the overlay accuracy compensation value of the reference product on the same platform on the first layer; 5QC2 is the overlay accuracy compensation value of the target product on the first layer.
[0019] Furthermore, if the preset layer is the second layer or above, BSL is the inherent exposure deviation between layers of the reference product on the same platform in the preset layer; OVL1 is the inherent mask deviation between layers of the reference product on the same platform in the preset layer; OVL2 is the inherent mask deviation between layers of the target product in the preset layer; 5QC1 is the overlay accuracy compensation value of the reference product on the same platform in the preset layer; 5QC2 is the overlay accuracy compensation value of the target product in the preset layer.
[0020] Optionally, the specific steps of obtaining the overlay accuracy compensation value of the target product are:
[0021] The APC system automatically calculates the overlay accuracy compensation value of the target product according to the exposure inherent deviation of the reference product on the same platform at the preset layer and the mask inherent deviation of the target product at the preset layer.
[0022] Furthermore, after obtaining the overlay accuracy compensation value of the target product, the method further includes:
[0023] The APC system performs photolithography according to the overlay accuracy compensation value of the target product on the preset layer to generate the target product.
[0024] Compared with the prior art, the present invention has the following unexpected technical effects:
[0025] The present invention provides a method for optimizing photolithography parameters, comprising the following steps: obtaining the exposure inherent deviation of a reference product on the same platform at a preset layer, and obtaining the mask inherent deviation of a target product at the preset layer; obtaining the overlay accuracy compensation value of the target product according to the exposure inherent deviation of the reference product on the same platform at the preset layer and the mask inherent deviation of the target product at the preset layer. The present invention incorporates the OVL inherent deviation caused by mask manufacturing (such as the mask inherent deviation of the target product at the preset layer) into the OVL compensation value of the target product, and the unexpected technical effect achieved is: reducing the impact of the instability caused by mask manufacturing on OVL, and more comprehensively considering the influencing factors of OVL; and also obtaining the OVL compensation value of the target product according to the exposure inherent deviation of the reference product on the same platform at the preset layer and the mask inherent deviation of the target product at the preset layer, and the unexpected technical effect achieved is: making the calculation of the OVL compensation value of the target product more reasonable. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] Figure 1 This is the compensation effect diagram corresponding to the current lithography parameter optimization method.
[0027] Figure 2 A schematic flow chart of a photolithography parameter optimization method provided by an embodiment of the present invention.
[0028] Figure 3 A discrete schematic diagram of OVL complement values and decomposition items of a reference product on the same platform according to an embodiment of the present invention.
[0029] Figure 4 The figure is a discrete schematic diagram of the OVL supplementary value and decomposition items of the reference product and the OVL supplementary value and decomposition items of the target product on the same platform according to an embodiment of the present invention.
[0030] Figure 5 This is a compensation effect diagram corresponding to a photolithography parameter optimization method according to an embodiment of the present invention. DETAILED DESCRIPTION
[0031] A method for optimizing photolithography parameters of the present invention will be described in further detail below. The present invention will be described in more detail below with reference to the accompanying drawings, in which preferred embodiments of the present invention are shown. It should be understood that those skilled in the art can modify the present invention described herein and still achieve the beneficial effects of the present invention. Therefore, the following description should be understood as being widely known to those skilled in the art and not as a limitation of the present invention.
[0032] For the sake of clarity, not all features of the actual embodiments are described. In the following description, well-known functions and structures are not described in detail because they would clutter the invention with unnecessary detail. It should be recognized that in the development of any actual embodiment, a large number of implementation details must be made to achieve the developer's specific goals, such as changing from one embodiment to another according to the limitations of the relevant system or the relevant business. In addition, it should be recognized that such development work may be complex and time-consuming, but it is just a routine task for those skilled in the art.
[0033] In order to make the purpose and features of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are further described below in conjunction with the accompanying drawings. It should be noted that the accompanying drawings are all in a very simplified form and use inaccurate ratios, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.
[0034] In the background technology, Figure 1 As shown, the OVL compensation value of the reference product on the same platform is directly used to compensate the NTO (new product), resulting in the OVL of the produced NTO exceeding the specification or being close to the specification. After analysis, it is found that the OVL compensation value can be decomposed into the inherent deviation of the mask caused by mask manufacturing, such as the inherent OVL deviation between the current mask and the previous mask caused by mask manufacturing (i.e., the inherent deviation of the inter-layer mask), and the inherent exposure deviation caused by exposure manufacturing, such as the inherent OVL deviation between the current exposure and the previous exposure caused by exposure manufacturing (i.e., the inherent deviation of the inter-layer exposure). Due to the difference between the inherent deviation of the mask of the reference product on the same platform and the inherent deviation of the mask of the NTO, the actual OVL mark of the NTO is poorly compensated, and the OVL control of the NTO is unstable.
[0035] Based on the above analysis, if Figure 2 As shown, the core idea of the present invention is to provide a method for optimizing lithography parameters, comprising the following steps:
[0036] Step S10: obtaining the exposure inherent deviation of the reference product on the same platform at the preset layer, and obtaining the mask inherent deviation of the target product at the preset layer;
[0037] Step S20: Obtaining an OVL compensation value of the target product according to an exposure inherent deviation of a reference product on the same platform at a preset layer and a mask inherent deviation of the target product at the preset layer.
[0038] The present invention incorporates the OVL inherent deviation caused by mask manufacturing (such as the mask inherent deviation of the target product at the preset layer) into the OVL compensation value of the target product, reduces the impact of the instability caused by mask manufacturing on OVL, and more comprehensively considers the influencing factors of OVL; and also obtains the OVL compensation value of the target product based on the exposure inherent deviation of the reference product on the same platform at the preset layer and the mask inherent deviation of the target product at the preset layer, which can make the OVL compensation value calculation of the target product more reasonable.
[0039] The following combination Figure 3-Figure 5 A photolithography parameter optimization method provided in this embodiment is described in detail.
[0040] First, step S10 is performed to obtain the exposure inherent deviation of the reference product on the same platform at the preset layer, and obtain the mask inherent deviation of the target product at the preset layer.
[0041] This step is specifically as follows: Establishing a database of the APC (Advanced Process Control) system, wherein the database collects the OVL compensation value of the same-platform reference product at the preset layer, the inherent deviation of the mask of the same-platform reference product at the preset layer, and the inherent deviation of the mask of the target product at the preset layer. In detail, directly obtain the OVL compensation value of the current same-platform reference product at the preset layer in the APC system, and obtain the inherent deviation of the mask of the same-platform reference product at the preset layer and the inherent deviation of the mask of the target product at the preset layer. Among them, the inherent deviation of the mask of the same-platform reference product at the preset layer and the inherent deviation of the mask of the target product at the preset layer are data obtained by directly forming a photoresist layer on a bare wafer and directly exposing it through a mask. Among them, the target product is a new product that needs to be trial-produced, and the target product and the same-platform reference product are products of the same process technology platform (such as 55nm high voltage (HV)).
[0042] Please refer to Table 1 and Figure 3 ,Table 1 shows the relationship between the OVL compensation value 5QC1 of the same platform reference product at the preset layer, the mask inherent deviation OVL1 of the same platform reference product at the preset layer, and the exposure inherent deviation BSL of the same platform reference product at the preset layer corresponding to the ten items representing OVL. Figure 3a1 is the OVL compensation value 5QC1 curve of the preset layer of the same platform reference product corresponding to the ten items representing OVL, b1 is the exposure inherent deviation BSL curve of the preset layer of the same platform reference product corresponding to the ten items representing OVL, and c1 is the mask inherent deviation OVL1 curve of the preset layer of the same platform reference product corresponding to the ten items representing OVL. Figure 3 In the figure, the horizontal coordinate represents the ten items 1 to 10. The unit of the vertical coordinate corresponding to item 1 (Wafer ShiftX) and item 2 (Wafer ShiftY) is μm (micrometer). The unit of the vertical coordinate corresponding to item 3 (Wafer MagX), item 4 (Wafer MagY), item 7 (Shot MagX), and item 8 (Shot MagX) is ppm. The unit of the vertical coordinate corresponding to item 5 (Wafer RotX), item 6 (Wafer RotY), item 9 (Shot RotX), and item 10 (Shot RotY) is μrd (microradian).
[0043]
[0044] Table 1
[0045] According to Table 1 and Figure 3 The following formula can be obtained: The OVL compensation value 5QC1 of the reference product on the same platform at the preset layer satisfies the following formula:
[0046] 5QC1=BSL+OVL1; Formula 1
[0047] Among them, BSL is the exposure inherent deviation of the reference product on the same platform at the preset layer; OVL1 is the mask inherent deviation of the reference product on the same platform at the preset layer; 5QC1 is the OVL compensation value of the reference product on the same platform at the preset layer.
[0048] If the preset layer is the first layer, since there is no front mask and front exposure, BSL is the exposure inherent deviation of the same platform reference product on the first layer; OVL1 is the mask inherent deviation of the same platform reference product on the first layer; 5QC1 is the OVL compensation value of the same platform reference product on the first layer.
[0049] If the preset layer is not the first layer (i.e. the second layer and above), BSL is the inter-layer exposure inherent deviation of the reference product on the same platform at the preset layer (the OVL inherent deviation between the exposure of this layer and the exposure of the previous layer); OVL1 is the inter-layer mask inherent deviation of the reference product on the same platform at the preset layer (the OVL inherent deviation between the mask of this layer and the mask of the previous layer); OVL2 is the inter-layer mask inherent deviation of the target product at the preset layer (the OVL inherent deviation between the mask of this layer and the mask of the previous layer); 5QC1 is the OVL compensation value of the reference product on the same platform at the preset layer.
[0050] Please refer to Table 2 and Figure 4 ,Table 2 shows the relationship between the OVL complement value 5QC2 of the target product corresponding to the ten items representing OVL at the preset layer, the OVL complement value 5QC1 of the reference product on the same platform corresponding to the ten items representing OVL at the preset layer, the mask inherent deviation OVL1 of the reference product on the same platform corresponding to the ten items representing OVL at the preset layer, and the mask inherent deviation OVL2 of the target product corresponding to the ten items representing OVL at the preset layer. Figure 4 a1 is the OVL complement value 5QC1 curve that represents the preset layer of the reference product on the same platform corresponding to the ten OVL items, a2 is the OVL complement value 5QC2 curve that represents the preset layer of the target product corresponding to the ten OVL items, c1 is the mask inherent deviation OVL1 curve that represents the preset layer of the reference product on the same platform corresponding to the ten OVL items, c2 is the mask inherent deviation OVL2 curve that represents the preset layer of the target product corresponding to the ten OVL items. Figure 4 In the figure, the horizontal coordinate represents the ten items 1 to 10. The unit of the vertical coordinate corresponding to item 1 (Wafer ShiftX) and item 2 (Wafer ShiftY) is μm (micrometer), the unit of the vertical coordinate corresponding to item 3 (Wafer MagX), item 4 (WaferMagY), item 7 (Shot MagX), and item 8 (Shot MagX) is ppm, and the unit of the vertical coordinate corresponding to item 5 (WaferRotX), item 6 (Wafer RotY), item 9 (Shot RotX), and item 10 (Shot RotY) is μrd (microradian).
[0051]
[0052] Table 2
[0053] According to Table 2 and Figure 4 It can be seen that the OVL compensation value 5QC2 of the target product at the preset layer satisfies the following formula:
[0054] 5QC2=BSL+OVL2; Formula 2
[0055] 5QC2= 5QC1- OVL1+ OVL2; Formula 3
[0056] Among them, BSL is the exposure inherent deviation of the reference product on the same platform at the preset layer; OVL1 is the mask inherent deviation of the reference product on the same platform at the preset layer; 5QC1 is the OVL compensation value of the reference product on the same platform at the preset layer; 5QC2 is the OVL compensation value of the target product at the preset layer.
[0057] If the preset layer is the first layer, since there is no front mask and front exposure, BSL is the exposure inherent deviation of the reference product on the same platform on the first layer; OVL1 is the mask inherent deviation of the reference product on the same platform on the first layer; OVL2 is the mask inherent deviation of the target product on the first layer; 5QC1 is the OVL supplement value of the reference product on the same platform on the first layer; 5QC2 is the OVL supplement value of the target product on the first layer.
[0058] If the preset layer is not the first layer (i.e. the second layer and above), BSL is the inherent deviation of interlayer exposure of the reference product on the same platform at the preset layer (the inherent OVL deviation between the exposure of this layer and the exposure of the previous layer); OVL1 is the inherent OVL deviation of the interlayer mask at the preset layer of the reference product on the same platform (the inherent OVL deviation between the mask of this layer and the mask of the previous layer); OVL2 is the inherent OVL deviation of the interlayer mask at the preset layer of the target product (the inherent OVL deviation between the mask of this layer and the mask of the previous layer); 5QC1 is the OVL supplement value of the reference product on the same platform at the preset layer; 5QC2 is the OVL supplement value of the target product at the preset layer.
[0059] It should be noted that: if the preset layer is the first layer, due to the self-alignment of the OVL marks between adjacent shots of the first layer, the OVL compensation value of the reference product on the same platform and the OVL compensation value of the target product collected by the APC system are both 0. At this time, the inherent deviation of the first layer mask of the reference product on the same platform and the inherent deviation of the first layer mask of the target product are the same as those of the non-first layer, and the collection method of the OVL compensation value 5QC1 of the first layer of the reference product on the same platform and the OVL compensation value 5QC2 of the first layer of the target product are also the same as that of the non-first layer.
[0060] Then, step S20 is performed to obtain the OVL compensation value of the target product according to the exposure inherent deviation of the reference product on the same platform at the preset layer and the mask inherent deviation of the target product at the preset layer. In detail, the APC system automatically calculates the OVL compensation value of the target product according to the exposure inherent deviation of the reference product on the same platform at the preset layer and the mask inherent deviation of the target product at the preset layer, which can reduce the workload and reduce the cost.
[0061] In this step, based on the known exposure inherent deviation BSL of the same platform reference product at the preset layer, the mask inherent deviation OVL1 of the same platform reference product at the preset layer, the mask inherent deviation OVL2 of the target product at the preset layer, and the OVL compensation value 5QC1 of the same platform reference product at the preset layer, the APC system can obtain the OVL compensation value 5QC2 of the target product at the preset layer according to Formula 2, and perform OVL compensation on the target product according to the OVL compensation value 5QC2 of the target product at the preset layer.
[0062] like Figure 5As shown, first, based on the known inherent deviation OVL1 of the mask of the reference product on the same platform at the preset layer and the OVL compensation value 5QC1 of the reference product on the same platform at the preset layer, the APC system obtains the inherent exposure deviation BSL of the reference product on the same platform at the preset layer through Formula 1; then, based on the known inherent deviation OVL2 of the mask of the target product at the preset layer and the exposure inherent deviation BSL of the reference product on the same platform at the preset layer, the APC system obtains the OVL compensation value 5QC2 of the target product at the preset layer through Formula 2; finally, the APC system performs photolithography according to the OVL compensation value 5QC2 of the target product at the preset layer to generate the target product, thereby improving the overlay accuracy of the actual OVL mark in the target product during the manufacturing process.
[0063] In summary, the present invention provides a method for optimizing lithography parameters, comprising the following steps: obtaining the inherent exposure deviation of the reference product on the same platform at the preset layer, and obtaining the inherent deviation of the mask of the target product at the preset layer; obtaining the overlay accuracy compensation value of the target product according to the inherent exposure deviation of the reference product on the same platform at the preset layer and the inherent deviation of the mask of the target product at the preset layer. The present invention incorporates the inherent OVL deviation caused by mask manufacturing (such as the inherent deviation of the mask of the target product at the preset layer) into the OVL compensation value of the target product, and the unexpected technical effect achieved is: reducing the impact of the instability caused by mask manufacturing on OVL, and more comprehensively considering the influencing factors of OVL; and also obtaining the OVL compensation value of the target product according to the inherent exposure deviation of the reference product on the same platform at the preset layer and the inherent deviation of the mask of the target product at the preset layer, and the unexpected technical effect achieved is: making the calculation of the OVL compensation value of the target product more reasonable.
[0064] In addition, it should be noted that, unless otherwise specified or indicated, the terms "first" and "second" in the specification are only used to distinguish the various components, elements, steps, etc. in the specification, and are not used to indicate the logical relationship or sequential relationship between the various components, elements, steps, etc.
[0065] It is to be understood that, although the present invention has been disclosed as a preferred embodiment, the above embodiment is not intended to limit the present invention. For any person skilled in the art, without departing from the scope of the technical solution of the present invention, the technical content disclosed above can be used to make many possible changes and modifications to the technical solution of the present invention, or modified into equivalent embodiments of equivalent changes. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention without departing from the content of the technical solution of the present invention still falls within the scope of protection of the technical solution of the present invention.
Claims
1. A method for optimizing photolithography parameters, characterized in that: The following steps are involved: Obtaining the exposure inherent deviation of the reference product on the same platform at the preset layer, and obtaining the mask inherent deviation of the target product at the preset layer; Obtaining an overlay accuracy compensation value of the target product according to an exposure inherent deviation of the reference product on the same platform at a preset layer and a mask inherent deviation of the target product at a preset layer; Among them, the target product and the reference product on the same platform are products of the same process technology platform, and the target product is a new product.
2. The method for optimizing photolithography parameters according to claim 1, wherein: The specific method for obtaining the exposure inherent deviation of the reference product on the same platform at the preset layer and the mask inherent deviation of the target product at the preset layer is: A database of the APC system is established, wherein the database collects the overlay accuracy compensation value of the reference product on the same platform at the preset layer, the inherent deviation of the mask of the reference product on the same platform at the preset layer, and the inherent deviation of the mask of the target product at the preset layer.
3. The method for optimizing photolithography parameters according to claim 2, wherein: The target product is a new product that needs to be trial-produced, and the target product and the reference product on the same platform are products of the same process technology platform.
4. The method for optimizing photolithography parameters according to claim 2, wherein: The overlay accuracy compensation value 5QC1 of the reference product on the same platform at the preset layer satisfies the following formula: 5QC1=BSL+OVL1; Among them, BSL is the exposure inherent deviation of the reference product on the same platform at the preset layer; OVL1 is the mask inherent deviation of the reference product on the same platform at the preset layer.
5. The method for optimizing photolithography parameters according to claim 4, wherein: The target product's overlay accuracy compensation value 5QC2 on the preset layer satisfies the following formula: 5QC2=BSL+OVL2; 5QC2= 5QC1-OVL1+OVL2; Among them, BSL is the exposure inherent deviation of the reference product on the same platform at the preset layer; OVL1 is the mask inherent deviation of the reference product on the same platform at the preset layer; 5QC1 is the overlay accuracy compensation value of the reference product on the same platform at the preset layer.
6. The method for optimizing lithography parameters according to claim 4 or 5, characterized in that: If the preset layer is the first layer, BSL is the exposure inherent deviation of the reference product on the same platform on the first layer; OVL1 is the mask inherent deviation of the reference product on the same platform on the first layer; 5QC1 is the overlay accuracy compensation value of the reference product on the same platform on the first layer; 5QC2 is the overlay accuracy compensation value of the target product on the first layer.
7. The method for optimizing lithography parameters according to claim 4 or 5, characterized in that: If the preset layer is the second layer or above, BSL is the inherent deviation of interlayer exposure of the reference product on the same platform at the preset layer; OVL1 is the inherent deviation of the interlayer mask of the reference product on the same platform at the preset layer; OVL2 is the inherent deviation of the interlayer mask of the target product at the preset layer; 5QC1 is the overlay accuracy compensation value of the reference product on the same platform in the preset layer; 5QC2 is the overlay accuracy compensation value of the target product in the preset layer.
8. The method for optimizing photolithography parameters according to claim 1, wherein: The specific steps of obtaining the overlay accuracy compensation value of the target product are: The APC system automatically calculates the overlay accuracy compensation value of the target product according to the exposure inherent deviation of the reference product on the same platform at the preset layer and the mask inherent deviation of the target product at the preset layer.
9. The method for optimizing photolithography parameters according to claim 8, wherein: After obtaining the overlay accuracy compensation value of the target product, the method further includes: The APC system performs photolithography according to the overlay accuracy compensation value of the target product on the preset layer to generate the target product.