Array gas sensing device and array gas sensor

Abstract

The present application discloses an array gas sensor device and an array gas sensor, belonging to the field of gas sensing technology. The present application provides an array gas sensor device comprising a plurality of gas sensing devices, wherein the gas sensing device comprises: a control drive module, wherein the control drive module is connected to a gate drive voltage and a data voltage, and wherein the control drive module is used to provide a gas detection voltage based on the data voltage under the drive of the gate drive voltage; and a gas detection module, wherein the gas detection module is connected to a heating electrode voltage, wherein the input end of the gas detection module is connected to the control drive module, and the output end of the gas detection module is connected to an external detection port, and wherein the gas detection module is used to perform gas detection based on the heating electrode voltage and the gas detection voltage, thereby realizing targeted detection of different gases.

Description

Technical Field

[0001] The present application relates to the field of gas sensing technology, and in particular to an array gas sensing device and an array gas sensor. Background Art

[0002] With the rapid development of gas sensing technology, users have higher and higher requirements for the operation and control of gas sensing. Traditional gas sensing devices achieve gas detection by directly combining multiple gas-sensitive materials that detect different gases. This type of gas sensing device has a major defect and may not be able to perform targeted detection of different gases based on actual conditions. That is, a new gas sensing device is urgently needed to achieve targeted detection of different gases. Summary of the Invention

[0003] The main purpose of this application is to provide an array gas sensing device and an array gas sensor, aiming to solve the technical problem of how to achieve targeted detection of different gases.

[0004] To achieve the above-mentioned object, the present application provides an array gas sensing device, wherein the array gas sensing device comprises a plurality of gas sensing devices, and the gas sensing device comprises:

[0005] a control driving module, the control driving module being connected to a gate driving voltage and a data voltage, and configured to provide a gas detection voltage based on the data voltage under the driving of the gate driving voltage;

[0006] A gas detection module is connected to the heating electrode voltage, the input end of the gas detection module is connected to the control drive module, the output end of the gas detection module is connected to the external detection port, and the gas detection module is used to perform gas detection based on the heating electrode voltage and the gas detection voltage.

[0007] Optionally, the control drive module includes:

[0008] A thin film transistor, wherein a first terminal of the thin film transistor is connected to the data voltage, a third terminal of the thin film transistor is connected to the gate drive voltage, and a second terminal of the thin film transistor is connected to the gas detection module.

[0009] Optionally, the control and drive module further includes:

[0010] A grounding capacitor, wherein a first end of the grounding capacitor is connected to the second end of the thin film transistor, and a second end of the grounding capacitor is grounded.

[0011] Optionally, the gas detection module includes:

[0012] A gas sensor, wherein the first end of the gas sensor is connected to the second end of the thin film transistor, the second end of the gas sensor is connected to the external detection port, and the third end of the gas sensor is connected to the heating electrode voltage.

[0013] Optionally, the gas sensing device further includes:

[0014] substrate;

[0015] an insulating layer, the insulating layer being disposed on the substrate;

[0016] A passivation protection layer is provided on the insulating layer.

[0017] Optionally, the thin film transistor includes:

[0018] a third electrode, the third electrode serving as a third terminal of the thin film transistor, the third electrode being disposed in the insulating layer and close to the substrate;

[0019] a second electrode, the second electrode serving as a second terminal of the thin film transistor, the second electrode being disposed in the passivation protection layer and close to the insulating layer;

[0020] a first electrode, the first electrode serving as a first terminal of the thin film transistor, the first electrode being disposed in the passivation protection layer and close to the insulating layer, wherein the second electrode and the first electrode are spaced apart and disposed relative to the third electrode;

[0021] A first semiconductor layer is provided in the passivation protection layer and close to the insulating layer, wherein two sides of the first semiconductor layer are connected to the first electrode and the second electrode respectively.

[0022] Optionally, the gas sensor includes:

[0023] a fourth electrode, the fourth electrode serving as the first end of the gas sensor and connected to the second electrode, the fourth electrode being disposed on the passivation protection layer;

[0024] a fifth electrode, the fifth electrode serving as the second end of the gas sensor and connected to the external detection port, the fifth electrode being disposed on the passivation protection layer;

[0025] A gas-sensitive semiconductor layer is provided on the fifth electrode and the fourth electrode, wherein two sides of the gas-sensitive semiconductor layer are connected to the fourth electrode and the fifth electrode respectively.

[0026] Optionally, the gas sensor further includes:

[0027] A heating electrode, which serves as the third end of the gas sensor and is connected to the heating electrode voltage. The heating electrode is arranged in the passivation protection layer and close to the insulating layer, wherein the heating electrode is arranged opposite to the gas-sensitive semiconductor layer.

[0028] Optionally, when providing the gate driving voltage, the control driving module provides the gas detection voltage based on the data voltage under the driving of the gate driving voltage, and the gas detection module is configured to perform gas detection based on the gas detection voltage after performing heating based on the heating electrode voltage;

[0029] When the gate driving voltage is not provided, the control driving module stops providing the gas detection voltage.

[0030] In addition, to achieve the above-mentioned purpose, the present application also provides an array gas sensor, which includes the above-mentioned array gas sensing device.

[0031] The present application proposes an array gas-sensitive sensing device and an array gas-sensitive sensor. The present application optimizes the gas-sensitive sensing method and obtains an array gas-sensitive sensing device, which includes multiple gas-sensitive sensing devices. The gas-sensitive sensing device includes: a control drive module and a gas detection module. Since the gas-sensitive sensing device directly combines multiple gas-sensitive materials that detect different gases to achieve gas detection, it is impossible to perform targeted detection of different gases according to actual conditions. The control drive module is used for driving control, thereby achieving gas detection of different gas detection modules, thereby achieving the purpose of targeted detection of different gases. The present application combines the above modules, controls the drive module to provide a gas detection voltage based on a data voltage under the drive of a gate drive voltage, and the gas detection module performs gas detection based on a heating electrode voltage and a gas detection voltage. The control drive module is used for driving control (the array selects which gas detection module to work), thereby achieving gas detection of different gas detection modules. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

[0033] Figure 1 This is a schematic diagram of the functional modules of the first embodiment of the array gas sensing device of the present application;

[0034] Figure 2This is a schematic diagram of an equivalent circuit of the first embodiment of the array gas sensing device of the present application;

[0035] Figure 3 This is a schematic structural diagram of the first embodiment of the array gas sensing device of the present application;

[0036] Figure 4 This is a circuit diagram of a second embodiment of the array gas sensor device of the present application;

[0037] Figure 5 This is a circuit diagram of the third embodiment of the array gas sensor device of the present application.

[0038] Description of Figure Numbers:

[0039] Label name Label name 100 Gas sensing device 10 Control drive module 20 Gas detection module Gate Gate drive voltage Data Data voltage T1 Thin-film transistors 21 Gas sensor C Grounding capacitance V1 Heating electrode voltage 200 External detection port 110 substrate 120 insulation layer 130 Passivation protective layer T11 First electrode T12 Second electrode T13 The third electrode 11 First semiconductor layer 213 Heating electrode 212 Fifth electrode 211 Fourth electrode 22 Gas-sensitive semiconductor layer Tmn Thin-film transistors 2mn Gas sensor

[0040] The realization of the objectives, functional features and advantages of this application will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0041] It should be understood that the specific embodiments described herein are only used to explain the present application and are not intended to limit the present application.

[0042] The present invention provides an array gas sensing device, referring to Figure 1 , Figure 1 This is a schematic diagram of the functional modules of the first embodiment of the array gas sensing device of the present application.

[0043] In this embodiment, the array gas sensing device includes a plurality of gas sensing devices 100, each of which includes:

[0044] A control driving module 10 , wherein the control driving module 10 is connected to a gate driving voltage Gate and a data voltage Data, and is configured to provide a gas detection voltage based on the data voltage Data under the driving of the gate driving voltage Gate;

[0045] The gas detection module 20 is connected to the heating electrode voltage V1, the input end of the gas detection module 20 is connected to the control drive module 10, and the output end of the gas detection module 20 is connected to the external detection port 200. The gas detection module 20 is used to perform gas detection based on the heating electrode voltage and the gas detection voltage.

[0046] It should be noted that gas sensors are sensing devices used to detect gas content, primarily using semiconductor nanomaterials for gas content detection. Semiconductor nanomaterials have excellent gas-sensing properties and have broad application prospects in the field of gas detection. However, a semiconductor material is often only most sensitive to certain gases, such as nano-WO3 is more sensitive to acetone, and nano-SnO2 is more sensitive to ethanol. Single semiconductor gas sensors have problems such as false alarms and missed alarms. To reduce the missed alarm rate, traditional array sensors simply combine two or more array sensors together. However, these sensors cannot be individually controlled, cannot be miniaturized, and require high temperatures (100-500°C) for detection. Therefore, based on the above problems, the array gas sensor device of the present application is proposed, thereby at least achieving the effect of enabling individual control for different gas detections.

[0047] In this embodiment, the multiple gas sensing devices 100 in the array gas sensing device are each configured to detect different gases. Specifically, the semiconductor materials within the gas detection modules 20 of each gas sensing device 100 differ, thereby enabling detection of different gases. The control driver module 10 controls the activation of each gas detection module 20 to enable gas detection. The activation principle of the control driver module 10 is to provide a gas detection voltage based on the data voltage Data under the drive of the gate drive voltage Gate. In other words, only when driven by the gate drive voltage Gate and powered by the data voltage Data can the corresponding connected gas detection module 20 perform detection. Compared to the traditional method of directly turning all the gas sensing devices on, the present invention provides greater intelligence and specificity. The gas detection voltage refers to the output voltage of the control driver module 10 based on the data voltage Data input under the drive of the gate drive voltage Gate. This voltage is then passed through the gas detection module 20, which is then connected to the heating electrode voltage V1. After heating based on the heating electrode voltage V1, the gas detection voltage flowing through the gas detection module 20 is detected, thereby enabling gas detection. That is, the semiconductor material in the gas detection module 20 is heated and the resistance change caused by the gas and the semiconductor material is detected, thereby achieving gas detection. Because the entire detection process can be controlled by the control driving module 10, detection can only be achieved under the premise that the gate drive voltage Gate, the data voltage Data, and the heating electrode voltage V1 are working simultaneously, and different gas detection modules 20 can be controlled in a targeted manner to achieve gas detection by different gas detection modules.

[0048] This embodiment proposes an array gas sensing device and an array gas sensor. This application optimizes the gas sensing method and obtains an array gas sensing device, which includes multiple gas sensing devices. The gas sensing device includes: a control drive module and a gas detection module. Since the gas sensing device directly combines multiple gas-sensitive materials that detect different gases to achieve gas detection, it is impossible to perform targeted detection of different gases according to actual conditions. The control drive module is used for driving control, thereby enabling different gas detection modules to perform gas detection, thereby achieving the purpose of targeted detection of different gases. This application combines the above modules, controls the drive module to provide a gas detection voltage based on the data voltage under the drive of the gate drive voltage, and the gas detection module performs gas detection based on the heating electrode voltage and the gas detection voltage. Then, the control drive module is used for driving control (the array selects the gas detection module for which gas detection to work), thereby enabling different gas detection modules to perform gas detection.

[0049] Further, refer to Figure 2 , Figure 2 This is a schematic diagram of an equivalent circuit of the first embodiment of the array gas sensing device of the present application.

[0050] like Figure 2 As shown, in some feasible embodiments, the control driving module 10 includes:

[0051] The thin film transistor T1 has a first terminal connected to the data voltage Data, a third terminal connected to the gate driving voltage Gate, and a second terminal connected to the gas detection module 20 .

[0052] The control and drive module 10 further includes:

[0053] A grounding capacitor C, wherein a first end of the grounding capacitor C is connected to the second end of the thin film transistor T1 , and a second end of the grounding capacitor C is grounded.

[0054] For example, the grounding capacitor C is used to ground, thereby stabilizing the output voltage of the thin film transistor T1, i.e., the gas detection voltage. At this time, the thin film transistor T1 is connected to the data voltage Data and the gate drive voltage Gate, and then the gate drive voltage Gate can be used to control the thin film transistor T1 to conduct, and then the data voltage Data is output as the gas detection voltage. The subsequent gas detection voltage is then output after passing through the gas detection module 20. The output after the gas detection module 20 is detected to determine the gas detection result at this time, and then each thin film transistor Tmn in the gas sensing device 100 (i.e., the collective name of each thin film transistor in the mn array) is respectively controlled by the driving module 10 to achieve detection of different gases, and then different gas detections can be individually controlled, which can further improve the accuracy of other detections in complex environments.

[0055] It should be noted that the transistors used in all embodiments of the present application may be TFTs (Thin Film Transistors), field effect transistors, or other devices with the same characteristics. Since the source and drain of the transistors used here are symmetrical, their source and drain are interchangeable. In the embodiments of the present application, in order to distinguish the two poles of the transistor except the gate, one of the poles is called the source and the other is called the drain. Figure 2 In the figure, the G, D, and S labels of the first thin film transistor T1 can determine the characteristics of each port, where G is the third terminal of T1, S is the second terminal of T1, and D is the first terminal of T1. Alternatively, G can be the third terminal of T1, S is the first terminal of T1, and D is the second terminal of T1. The remaining transistors can be based on Figure 2 The form in is specified as follows: the middle end of each transistor is the gate, the signal input end is the source, and the signal output end is the drain. In addition, the transistors used in the embodiments of the present application may include P-type transistors and / or N-type transistors, wherein the P-type transistor is turned on when the gate is at a low level and is cut off when the gate is at a high level, and the N-type transistor is turned on when the gate is at a high level and is cut off when the gate is at a low level. The gate drive voltage conduction mode of the corresponding N-type and P-type transistors is different, and the corresponding control mode is also different. The specific control is based on the actual transistor and is not limited here.

[0056] Furthermore, in some feasible embodiments, the first thin film transistor T1 can be a low-temperature polysilicon thin film transistor, an oxide semiconductor thin film transistor, or an amorphous silicon thin film transistor. The transistors in the driving circuit provided in the embodiments of the present application are transistors made of the same material, thereby avoiding the impact of differences between transistors of different materials on the driving circuit.

[0057] Furthermore, in some feasible embodiments, the gas detection module 20 includes:

[0058] The gas sensor 21 has a first terminal connected to the second terminal of the thin film transistor T1 , a second terminal connected to the external detection port 200 , and a third terminal connected to the heating electrode voltage V1 .

[0059] In this embodiment, if Figure 2 As shown, the gas sensor 21 is equivalent to a variable resistor. The first end of the gas sensor 21 is connected to the second end of the thin film transistor T1, and when the thin film transistor T1 is turned on (both the gate drive voltage Gate and the data voltage Data are provided), the gas sensor 21 is controlled to perform gas detection. At the same time, the third end of the gas sensor 21 is connected to the heating electrode voltage V1, and the gas sensor 21 is heated to output the actual detection result (current or voltage value) to the external detection port 200 to complete the gas detection.

[0060] Further, refer to Figure 3 , Figure 3 This is a structural diagram of the first embodiment of the array gas sensing device of the present application.

[0061] like Figure 3 As shown, in some feasible embodiments, the gas sensing device 100 further includes:

[0062] substrate 110;

[0063] an insulating layer 120 , wherein the insulating layer 120 is disposed on the substrate 110 ;

[0064] The passivation protection layer 130 is disposed on the insulating layer 120 .

[0065] In this embodiment, the structure of the gas sensing device 100 is composed of a substrate 110; an insulating layer 120, wherein the insulating layer 120 is arranged on the substrate 110; a passivation protective layer 130, wherein the passivation protective layer 130 is arranged on the insulating layer 120, and various structures of the thin film transistor T1 and the gas sensor 21 are arranged on or inside the above structure. The above is only one component structure of the gas sensing device 100, and other component structures may also be used, which is not limited here.

[0066] Furthermore, in some feasible embodiments, the thin film transistor T1 includes:

[0067] a third electrode T13 , the third electrode T13 serving as a third terminal of the thin film transistor T1 , the third electrode T13 being disposed in the insulating layer 120 and close to the substrate 110 ;

[0068] a second electrode T12 , the second electrode T12 serving as a second end of the thin film transistor T1 , and the second electrode T12 being disposed in the passivation protection layer 130 and close to the insulating layer 120 ;

[0069] a first electrode T11, the first electrode T11 serving as a first end of the thin film transistor T1, the first electrode T11 being disposed in the passivation protection layer 130 and close to the insulating layer 120, wherein the second electrode T12 and the first electrode T11 are spaced apart and disposed relative to the third electrode T13;

[0070] The first semiconductor layer 11 is disposed in the passivation protection layer 130 and close to the insulating layer 120 , wherein two sides of the first semiconductor layer 11 are respectively connected to the first electrode T11 and the second electrode T12 .

[0071] In this embodiment, the thin film transistor T1 is composed of a third electrode T13, a second electrode T12, a first electrode T11, and a first semiconductor layer 11, and is arranged as described above. The first semiconductor layer 11 can be arranged above the second electrode T12 and the first electrode T11, that is, the first semiconductor layer 11 can be formed after the second electrode T12 and the first electrode T11 are formed; the first semiconductor layer 11 can be arranged below the second electrode T12 and the first electrode T11, that is, the second electrode T12 and the first electrode T11 are formed after the first semiconductor layer 11 is formed; or it can be arranged above or below the second electrode T12 and the first electrode T11. Thus, the function of the thin film transistor T1 is realized. It is worth noting that the thin film transistor T1 can also have other composition structures, which are not limited here.

[0072] In some feasible embodiments, the gas sensor 21 includes:

[0073] a fourth electrode 211 , the fourth electrode 211 serving as a first end of the gas sensor 21 and connected to the second electrode T12 , the fourth electrode 211 being disposed on the passivation protection layer 130 ;

[0074] A fifth electrode 212 , which serves as the second end of the gas sensor 21 and is connected to the external detection port 200 , and is disposed on the passivation protection layer 130 ;

[0075] The gas-sensitive semiconductor layer 22 is provided on the fifth electrode 212 and the fourth electrode 211 , wherein two sides of the gas-sensitive semiconductor layer 22 are connected to the fourth electrode 211 and the fifth electrode 212 , respectively.

[0076] Specifically, the gas sensor 21 further includes:

[0077] The heating electrode 213 serves as the third end of the gas sensor 21 and is connected to the heating electrode voltage V1. The heating electrode 213 is arranged in the passivation protection layer 130 and close to the insulating layer 120. The heating electrode 213 is arranged opposite to the gas-sensitive semiconductor layer 22.

[0078] In this embodiment, the gas sensor 21 is composed of a fourth electrode 211, a fifth electrode 212, a heating electrode 213, and a gas-sensitive semiconductor layer 22. The gas-sensitive semiconductor layer 22 is provided on the fifth electrode 212 and the fourth electrode 211. That is, after the fifth electrode 212 and the fourth electrode 211 are formed, the gas-sensitive semiconductor layer 22 is formed on the fifth electrode 212 and the fourth electrode 211. Figure 3 The gas-sensitive semiconductor layer 22 is shown attached to the fifth electrode 212 and the fourth electrode 211, as well as to the passivation protective layer 130 between the fifth electrode 212 and the fourth electrode 211. This embodiment uses WO3 as an example for detecting acetone: when the surface gas-sensitive semiconductor layer 22 (WO3) comes into contact with acetone, its resistance increases. If the thin-film transistor T1 is turned on at this time, the voltage applied by data increases the voltage drop at the gas sensor, causing the current signal detected by the external detection port 200 to decrease. The concentration change of the gas contacted is determined based on the intensity of the current change. At this time, a voltage is applied to the heating electrode 213 to increase the change in resistance of the gas-sensitive semiconductor material before and after contact with the gas. It is worth noting that the start timing of the heating electrode voltage V1 connected to the heating electrode 213 can coincide with the turn-on timing of the thin-film transistor T1 of the gas sensor 21, or can precede the turn-on timing of the thin-film transistor T1, and this is not limited here.

[0079] Further, in some feasible embodiments, referring to Figure 4 , Figure 4 2 is a circuit diagram of a second embodiment of the array gas sensing device of the present application. When the gate drive voltage Gate is provided, the control driving module 10 provides the gas detection voltage based on the data voltage Data under the drive of the gate drive voltage Gate. The gas detection module 20 is configured to perform gas detection based on the gas detection voltage after heating based on the heating electrode voltage V1.

[0080] When the gate driving voltage Gate is not provided, the control driving module 10 stops providing the gas detection voltage.

[0081] In this embodiment, the array gas sensing device is based on the display panel industry technology, combining TFT array technology with sensors to form a miniaturized, personalized, more accurate array sensor that does not require extremely high temperatures for sensing. Figure 5, Figure 5 This is a circuit diagram of the third embodiment of the array gas sensing device of this application. Using a TFT array, multiple gas-sensitive materials are integrated into one sensor device, thereby coping with various complex detection environments, such as multiple mixed gas environments. Figure 5 If detecting gas A, the TFT only activates the gas sensors that are particularly sensitive to gas A. For example, the upper-right control driver module 10 in the figure activates, which in turn controls the gas detection module 20 to perform gas detection. Simultaneously, based on the information obtained from signal detection feedback from multiple sensors within the array, misjudgments caused by the failure of certain sensors can be prevented.

[0082] It is worth noting that the control driving module 10 can be a 1T1C structure within a module, and can adopt the form of multiple TFTs within a module to increase TFT stability and signal detection accuracy according to actual application conditions, such as symmetrical compensation of two TFTs.

[0083] In addition, an embodiment of the present application further provides an array gas sensor, which includes the above-mentioned array gas sensing device.

[0084] It should be noted that, in this document, the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or system comprising a series of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or system. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or system comprising the element.

[0085] The serial numbers of the above embodiments of the present application are for description only and do not represent the advantages or disadvantages of the embodiments.

[0086] Through the description of the above implementation methods, those skilled in the art can clearly understand that the above-mentioned embodiment methods can be implemented by means of software plus the necessary general hardware platform, and of course can also be implemented by hardware, but in many cases the former is a better implementation method. Based on this understanding, the technical solution of the present application, or the part that contributes to the prior art, can be embodied in the form of a software product, which is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk) as described above, and includes a number of instructions for enabling a terminal device (which can be a mobile phone, computer, server, air conditioner, or network device, etc.) to execute the methods described in each embodiment of the present application.

[0087] The above are only preferred embodiments of the present application and do not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. An array gas sensing device, characterized in that: The array gas sensing device includes a plurality of gas sensing devices, each of which includes: a control driving module, the control driving module receiving a gate driving voltage and a data voltage, the control driving module being configured to provide a gas detection voltage based on the data voltage under the drive of the gate driving voltage, wherein the gas detection voltage refers to an output voltage of the control driving module based on the data voltage input under the drive of the gate driving voltage; a gas detection module, wherein the gas detection module is connected to the heating electrode voltage, the input end of the gas detection module is connected to the control drive module, the output end of the gas detection module is connected to the external detection port, and the gas detection module is used to perform gas detection based on the heating electrode voltage and the gas detection voltage; The control driving module includes a thin film transistor and a grounding capacitor, a first end of the thin film transistor is connected to the data voltage, a third end of the thin film transistor is connected to the gate driving voltage, a second end of the thin film transistor is connected to the gas detection module, a first end of the grounding capacitor is connected to the second end of the thin film transistor, and a second end of the grounding capacitor is grounded; The gas detection module includes a gas sensor, a first end of the gas sensor is connected to the second end of the thin film transistor, a second end of the gas sensor is connected to the external detection port, and a third end of the gas sensor is connected to the heating electrode voltage; The gas sensitive sensor device also includes: substrate; an insulating layer, the insulating layer being disposed on the substrate; a passivation protection layer, the passivation protection layer being disposed on the insulating layer; The gas sensor comprises a fourth electrode, a fifth electrode, a heating electrode and a gas-sensitive semiconductor layer, wherein the fourth electrode and the fifth electrode are arranged on the passivation protection layer with an interval; The gas detection module is configured to cover the gas-sensitive semiconductor layer on the fourth electrode, the fifth electrode, and the passivation protective layer exposed between the fourth electrode and the fifth electrode, and electrically connect the fourth electrode to the second end of the thin-film transistor and the fifth electrode to the external detection port to form a current detection path controlled by the thin-film transistor switch, and determine the change in gas concentration exposed to the gas-sensitive semiconductor layer based on the change in current intensity output by the current detection path.

2. The array gas sensing device according to claim 1, wherein: The thin film transistor includes: a third electrode, the third electrode serving as a third terminal of the thin film transistor, the third electrode being disposed in the insulating layer and close to the substrate; a second electrode, the second electrode serving as a second terminal of the thin film transistor, the second electrode being disposed in the passivation protection layer and close to the insulating layer; a first electrode, the first electrode serving as a first terminal of the thin film transistor, the first electrode being disposed in the passivation protection layer and close to the insulating layer, wherein the second electrode and the first electrode are spaced apart and disposed relative to the third electrode; A first semiconductor layer is provided in the passivation protection layer and close to the insulating layer, wherein two sides of the first semiconductor layer are connected to the first electrode and the second electrode respectively.

3. The array gas sensing device according to claim 2, wherein: The gas sensor comprises: a fourth electrode, the fourth electrode serving as the first end of the gas sensor and connected to the second electrode, the fourth electrode being disposed on the passivation protection layer; a fifth electrode, the fifth electrode serving as the second end of the gas sensor and connected to the external detection port, the fifth electrode being disposed on the passivation protection layer; A gas-sensitive semiconductor layer is provided on the fifth electrode and the fourth electrode, wherein two sides of the gas-sensitive semiconductor layer are connected to the fourth electrode and the fifth electrode respectively.

4. The array gas sensing device according to claim 3, wherein: The gas sensor also includes: A heating electrode, which serves as the third end of the gas sensor and is connected to the heating electrode voltage. The heating electrode is arranged in the passivation protection layer and close to the insulating layer, wherein the heating electrode is arranged opposite to the gas-sensitive semiconductor layer.

5. The array gas sensing device according to claim 4, characterized in that: When the gate driving voltage is provided, the control driving module provides the gas detection voltage based on the data voltage under the drive of the gate driving voltage, and the gas detection module is used to perform gas detection based on the gas detection voltage after heating based on the heating electrode voltage; When the gate driving voltage is not provided, the control driving module stops providing the gas detection voltage.

6. An array gas sensor, characterized in that: The array gas sensor comprises the array gas sensing device according to any one of claims 1 to 5.

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