Laser anti-reflection film, glass with laser anti-reflection film and preparation method thereof

Abstract

The present application relates to a laser anti-reflection film, glass having the laser anti-reflection film, and a preparation method thereof. The laser anti-reflection film comprises a transition metal oxide layer and a silicon oxide layer alternately stacked. By using a mixture of a Group IVB transition metal oxide and a Group VB transition metal oxide to form the transition metal oxide layer, the transmittance of a 1064nm band laser can be increased to over 99% with a relatively small number of stacked layers, thereby greatly reducing production costs and solving the problem that existing anti-reflection films require stacking more than a dozen or even dozens of layers to increase the transmittance to over 99%.

Description

Technical Field

[0001] The present application relates to the field of glass technology, and in particular to a laser anti-reflection film, glass having the laser anti-reflection film, and a preparation method thereof. Background Art

[0002] With the continuous development of laser technology, laser processing technology has become increasingly sophisticated and automated, while the requirements for various technologies have also become increasingly higher. However, when using lasers to achieve laser processing through glass, a series of technical problems are often encountered: when the laser light emitted by the laser passes through the glass, a large amount of reflected light is generated on the glass surface, resulting in a significant loss of energy before the laser reaches the workpiece. If the set power is continued, the processing quality of the workpiece will be affected; if the laser power is increased to compensate for the energy loss caused by the reflected light, the energy loss will increase.

[0003] Currently, in order to improve transmittance and reduce reflection, an anti-reflection film is usually set on the glass surface (as disclosed in CN106521414A). In addition, the material selection, thickness of each layer and the arrangement order of the anti-reflection film are very different according to the transmittance requirements of light in different bands.

[0004] Most lasers operate at a wavelength of 1064nm. To improve their performance in the 1064nm band after passing through glass, it is necessary to coat the glass surface with a high-efficiency anti-reflection coating for the 1064nm band. This increases the transmittance of the laser light reaching the workpiece surface to over 99% after passing through the glass, reduces energy loss in the 1064nm band, and improves workpiece quality to meet operational requirements. However, existing anti-reflection coatings typically require stacking dozens of layers to achieve transmittance above 99%, significantly increasing production costs. Summary of the Invention

[0005] The present application provides a laser anti-reflection film, glass with the laser anti-reflection film, and a preparation method thereof. The laser anti-reflection film can increase the transmittance of 1064nm band laser to more than 99% with a fewer number of stacked layers, greatly reducing production costs.

[0006] In a first aspect, the present application provides a laser anti-reflection film, comprising: n transition metal oxide layers and n silicon oxide layers alternately stacked in sequence;

[0007] Wherein, the material of each transition metal oxide layer comprises a mixture of group IVB transition metal oxide and group VB transition metal oxide;

[0008] n is a positive integer from 1 to 3.

[0009] In some embodiments, the Group IVB transition metal oxide is ZrO 2 ; and the Group VB transition metal oxide is Ta 2 O 5 .

[0010] In some embodiments, the mass ratio of Ta2O5 to ZrO2 is 2:1-1:2.

[0011] In some embodiments, the thickness of each transition metal oxide layer is 40-200 nm; the thickness of each silicon oxide layer is 100-250 nm.

[0012] In some embodiments, n is 1 or 2.

[0013] The second aspect of the present application provides a glass with a laser anti-reflection film, comprising: a glass substrate and a laser anti-reflection film arranged on both surfaces of the glass substrate, the laser anti-reflection film being the laser anti-reflection film of the first aspect of the present application, wherein the transition metal oxide layer is close to the surface of the glass substrate and the silicon oxide layer is far from the surface of the glass substrate.

[0014] In some embodiments, the transmittance of the glass at 1064 nm is greater than 99%.

[0015] A third aspect of the present application provides a method for preparing the glass having a laser anti-reflection coating according to the second aspect of the present application, comprising the following steps:

[0016] Vacuum evaporation coating is used to alternately form n layers of transition metal oxide and n layers of silicon oxide on one surface of a glass substrate;

[0017] Vacuum evaporation coating is used to alternately form n layers of transition metal oxide and n layers of silicon oxide on the other surface of the glass substrate, thereby producing glass with a laser anti-reflection film.

[0018] In some embodiments, vacuum evaporation coating is performed in a vacuum chamber, and the heating temperature of the vacuum chamber is 100-300°C.

[0019] In some embodiments, forming each transition metal oxide layer includes: mixing, pre-melting, and coating a Group IVB transition metal oxide and a Group VB transition metal oxide in a vacuum chamber.

[0020] Compared with the prior art, the present invention has the following beneficial effects:

[0021] The present application provides a laser anti-reflection film, glass having the laser anti-reflection film, and a preparation method thereof. The laser anti-reflection film includes alternately stacked transition metal oxide layers and silicon oxide layers. By using a mixture of Group IVB transition metal oxides and Group VB transition metal oxides to form the transition metal oxide layers, the transmittance of 1064nm lasers can be increased to over 99% with a relatively small number of stacked layers, thereby greatly reducing production costs and solving the problem that existing anti-reflection films require stacking more than a dozen or even dozens of layers to increase the transmittance to over 99%. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 This is a schematic structural diagram of the glass with laser anti-reflection film prepared in Example 1 of the present application.

[0023] Figure 2 This is the laser transmittance curve of the glass with laser anti-reflection coating prepared in Example 1 of the present application near the 1064nm band.

[0024] Figure 3 This is the laser transmittance curve of the glass with laser anti-reflection coating prepared in Example 2 of the present application near the 1064nm band.

[0025] Description of reference numerals:

[0026] 100. Glass substrate; 200. Transition metal oxide layer; 300. Silicon oxide layer. DETAILED DESCRIPTION

[0027] In order to make the content of the present invention easier to understand, the technical scheme of the present invention is further described below in conjunction with specific examples, but the present invention is not limited thereto. All technologies realized based on the above content of the present invention are encompassed within the scope that the present invention is intended to protect. Unless otherwise stated, the raw materials and reagents used in the examples are all commercially available products. Reagents, instruments or operating procedures not recorded herein are all contents that can be routinely determined by those of ordinary skill in the art.

[0028] In a first aspect, the present application provides a laser antireflection film. The laser antireflection film comprises: n transition metal oxide layers 200 and n silicon oxide layers 300, alternately stacked in sequence. Each transition metal oxide layer 200 is made of a mixture of a Group IVB transition metal oxide and a Group VB transition metal oxide. n is a positive integer from 1 to 4.

[0029] The present application uses a mixture of Group IVB transition metal oxides and Group VB transition metal oxides to form a transition metal oxide layer 200. The transition metal oxide layer 200 is a high refractive index layer, and the silicon oxide layer 300 is a low refractive index layer. By using the transition metal oxide layer 200 including the transition metal oxide mixture in combination with the silicon dioxide layer 300, the transmittance of the 1064nm band laser is successfully increased to more than 99%. Most importantly, through such a combination design, the number of stacked layers of the anti-reflection film is greatly reduced, the production cost is significantly reduced, and the technical problem that the existing anti-reflection film needs to be stacked with more than ten layers or even dozens of layers to increase the transmittance to more than 99% is solved.

[0030] The inventors also discovered that when using only a Group IVB transition metal oxide or only a Group VB transition metal oxide as the transition metal oxide layer, combined with a silicon oxide layer 300, to form an antireflection film, at least six layers of each are required to increase the transmittance of 1064nm laser light to over 99%. This discovery confirms the importance of using a mixture of Group IVB and Group VB transition metal oxides to form the transition metal oxide layer 200. The present application utilizes this mixture as the transition metal oxide layer 200, combined with a silicon oxide layer 300, to successfully improve transmittance and significantly reduce production costs.

[0031] In addition, the antireflection film has a simple film structure, uses common materials, and is easy to manufacture, thus enabling industrial production.

[0032] In some embodiments, the Group IVB transition metal oxide is ZrO2. The Group VB transition metal oxide is Ta2O5. Each transition metal oxide layer 200 is made of a mixture of ZrO2 and Ta2O5. By optimizing the types of the Group IVB transition metal oxide and the Group VB transition metal oxide, the number of stacked transition metal oxide layers 200 and silicon oxide layer 300 can be further reduced, thereby lowering production costs.

[0033] In some embodiments, the mass ratio of Ta2O5 to ZrO2 can be 2:1-1:2. Within this numerical range, as the amount of Ta2O5 decreases and the amount of ZrO2 increases, the transmittance of the antireflection film for lasers in the 1064nm band first increases and then decreases. A Ta2O5 to ZrO2 mass ratio that is too large or too small is not conducive to improving transmittance, requiring a larger number of stacked layers and increasing production costs. By optimizing the mass ratio of Ta2O5 to ZrO2 within this range, it is beneficial to further reduce the number of stacked layers of the transition metal oxide layer 200 and the silicon oxide layer 300, thereby reducing production costs.

[0034] In some specific embodiments, the mass ratio of Ta2O5 to ZrO2 may be 2:1, 1.5:1, 1.2:1, 1:1, 1:1.2, 1:1.5 or 1:2. Preferably, the mass ratio of Ta2O5 to ZrO2 may be 1.2:1-1:1.2.

[0035] In some embodiments, the thickness of each transition metal oxide layer 200 may be 40-200 nm, and the thickness of each silicon oxide layer 300 may be 100-250 nm.

[0036] Optimizing the thickness of the transition metal oxide layer 200 and the silicon oxide layer 300 is beneficial to improving the transmittance of the antireflection film in the 1064 nm laser band.

[0037] In some specific embodiments, the thickness of each transition metal oxide layer 200 may be 40 nm, 60 nm, 80 nm, 100 nm, 120 nm, 140 nm, 160 nm, 180 nm, or 200 nm.

[0038] In some specific embodiments, the thickness of each silicon oxide layer 300 may be 100 nm, 110 nm, 130 nm, 150 nm, 170 nm, 190 nm, 210 nm, 230 nm, or 250 nm.

[0039] In some embodiments, n can be 1 or 2. The greater the number of transition metal oxide layers 200 and silicon oxide layers 300, the higher the laser transmittance of the antireflection film at 1064 nm. However, the greater the number of transition metal oxide layers 200 and silicon oxide layers 300, the higher the production cost. Therefore, while ensuring that the transmittance of the antireflection film at 1064 nm reaches 99% or higher, n can be minimized. Preferably, n can be 1.

[0040] In a second aspect, the present application provides a glass having a laser antireflection coating, comprising: a glass substrate 100 and laser antireflection coatings disposed on both surfaces of the glass substrate 100. The laser antireflection coating is the laser antireflection coating of the first aspect of the present application. The transition metal oxide layer 200 is located near the surface of the glass substrate 100, and the silicon oxide layer 300 is located away from the surface of the glass substrate 100.

[0041] refer to Figure 1 The transition metal oxide layer 200 is disposed on the surface of the glass substrate 100, and the silicon oxide layer 300 is disposed on the surface of the transition metal oxide layer 200. In the case of a larger number of layers, the transition metal oxide layer 200 and the silicon oxide layer 300 are stacked in this order.

[0042] By providing the above-mentioned laser anti-reflection film on both surfaces of the glass substrate 100 , the laser transmittance of the glass in the 1064 nm band can be increased to above 99%, thereby meeting the use requirements.

[0043] In some embodiments, the glass with a laser antireflection coating has a transmittance of 99% or greater at 1064nm. Higher laser transmittance reduces laser energy loss, facilitating precision and automation of laser processing. When the laser transmittance of glass reaches 99% or greater, it can meet operational requirements.

[0044] A third aspect of the present application provides a method for preparing the glass having a laser anti-reflection coating according to the second aspect of the present application, comprising the following steps:

[0045] Vacuum evaporation is used to alternately form n transition metal oxide layers 200 and n silicon oxide layers 300 on one surface of a glass substrate 100;

[0046] Vacuum evaporation coating is used to alternately form n transition metal oxide layers 200 and n silicon oxide layers 300 on the other surface of the glass substrate 100, thereby manufacturing glass with a laser anti-reflection film.

[0047] The preparation method of the present application has a simple process and good plating performance, and can effectively solve the problem that when laser passes through ordinary glass to process a workpiece, the transmittance of the laser is reduced due to reflection from the glass, thereby affecting the workpiece processing quality.

[0048] The present application uses vacuum evaporation coating to deposit the film system on the glass surface, that is, the film material is placed in a crucible, and the film material is evaporated (vaporized) to the glass surface by electron beam heating. The advantage of this method is that the electron beam has an extremely high energy density, so a higher temperature can be obtained, so it can be used to vaporize refractory materials; and heat can be directly added to the surface of the evaporated material, with high thermal efficiency, small heat conduction and heat radiation losses; and fast deposition efficiency, which is suitable for industrial production.

[0049] In some embodiments, vacuum evaporation coating is performed within a vacuum chamber. The chamber is heated at a temperature of 100-300°C. Although the specific mechanism is unclear, the chamber's heating temperature significantly affects the transmittance of the antireflection coating. Controlling the chamber's heating temperature within the aforementioned range during vacuum evaporation coating can increase the transmittance of the glass at 1064nm to over 99%. Excessively low or high chamber heating temperatures are detrimental to improving transmittance.

[0050] In some embodiments, the heating temperature of the vacuum chamber may be 100°C, 120°C, 140°C, 160°C, 180°C, 200°C, 220°C, 240°C, 260°C, 280°C, or 300°C.

[0051] In some embodiments, the formation of each transition metal oxide layer 200 includes: pre-melting the Group IVB transition metal oxide and the Group VB transition metal oxide in a vacuum chamber and then depositing the pre-melted films.

[0052] The film materials required for this application include Group IVB transition metal oxides, Group VB transition metal oxides, and silicon dioxide. Before depositing the transition metal oxide layer 200, the Group IVB transition metal oxide and the Group VB transition metal oxide can be pre-melted separately. Before depositing the silicon oxide layer 300, the silicon dioxide can be pre-melted. The effect of pre-melting affects the final coating quality, and thus the transmittance of the glass. This effect can be improved by optimizing the electron gun current and pre-melting time.

[0053] In some embodiments, during the pre-melting of the VB group transition metal oxide, the electron gun current may be 20mA-100mA; and the pre-melting time may be 20-60min. In some specific embodiments, the electron gun current may be 20mA, 40mA, 60mA, 80mA, or 100mA. The pre-melting time may be 20min, 30min, 40min, 50min, or 60min. In some specific embodiments, the pre-melting of the VB group transition metal oxide includes: pre-melting at an electron gun current of 20mA for 10min, pre-melting at an electron gun current of 40mA for 10min, pre-melting at an electron gun current of 60mA for 10min, and pre-melting at an electron gun current of 80mA for 10min, in sequence. Such a pre-melting procedure is conducive to fully pre-melting the VB group transition metal oxide.

[0054] In some embodiments, during the pre-melting of the Group IVB transition metal oxide, the electron gun current may be 20 mA-120 mA, and the pre-melting time may be 20-60 min. In some specific embodiments, the electron gun current may be 20 mA, 40 mA, 60 mA, 80 mA, 100 mA, or 120 mA. The pre-melting time may be 20 min, 30 min, 40 min, 50 min, or 60 min. In some specific embodiments, the pre-melting of the Group IVB transition metal oxide includes, in sequence: pre-melting at a 20 mA electron gun current for 10 min, pre-melting at a 40 mA electron gun current for 10 min, pre-melting at a 60 mA electron gun current for 10 min, pre-melting at an 80 mA electron gun current for 10 min, and pre-melting at a 100 mA electron gun current for 10 min. This pre-melting procedure is conducive to fully pre-melting the Group IVB transition metal oxide.

[0055] In some embodiments, during the pre-melting of silicon dioxide, the electron gun current may be 20mA-50mA, and the pre-melting time may be 5-30 minutes. In some specific embodiments, the electron gun current may be 20mA, 25mA, 30mA, 35mA, 40mA, 45mA, or 50mA. The pre-melting time may be 5 minutes, 15 minutes, 20 minutes, 25 minutes, or 30 minutes. In some specific embodiments, pre-melting the silicon dioxide includes: pre-melting at an electron gun current of 20mA for 5 minutes, and then at an electron gun current of 40mA for 5 minutes. This pre-melting procedure is designed to facilitate sufficient pre-melting of the silicon dioxide.

[0056] After pre-melting the film materials, the mass ratio of the VB and IVB transition metal oxides in the final transition metal oxide layer can be controlled by controlling the film formation rates of the VB and IVB transition metal oxides. Since the VB and IVB transition metal oxides are pre-melted in two crucibles, it is necessary to simultaneously evaporate and deposit the VB and IVB transition metal oxides to improve mixing uniformity after film formation. In some embodiments, the ratio of the film formation rate of the Group VB transition metal oxide to the film formation rate of the Group IVB transition metal oxide may be 1:0.732 to 1:2.928, for example, 1:0.732, 1:0.800, 1:1.000, 1:1.200, 1:1.400, 1:1.600, 1:1.800, 1:2.000, 1:2.200, 1:2.400, 1:2.600, 1:2.800, or 1:2.928. In some specific embodiments, the film formation rate of the Group VB transition metal oxide may be 0.05 to 0.3 nm / s, for example, 0.05 nm / s, 0.1 nm / s, 0.15 nm / s, 0.2 nm / s, 0.25 nm / s, or 0.3 nm / s. The film formation rate of the Group IVB transition metal oxide may be 0.05 to 0.3 nm / s, for example, 0.05 nm / s, 0.1 nm / s, 0.15 nm / s, 0.2 nm / s, 0.25 nm / s, or 0.3 nm / s.

[0057] In some embodiments, the film formation rate of each transition metal oxide layer 200 may be 0.05-0.3 nm / s, for example, 0.05 nm / s, 0.1 nm / s, 0.15 nm / s, 0.2 nm / s, 0.25 nm / s, or 0.3 nm / s.

[0058] In some embodiments, the film formation rate of each silicon oxide layer 300 may be 0.1-0.3 nm / s, for example, 0.1 nm / s, 0.15 nm / s, 0.2 nm / s, 0.25 nm / s, or 0.3 nm / s.

[0059] In some embodiments, the vacuum degree in the vacuum chamber may be 3.0×10 -3 Pa, for example, can be 1×10 -3 ~3×10 - 3 Pa.

[0060] In some embodiments, a method for preparing glass having a laser anti-reflection coating may include the following steps:

[0061] (S10) Cleaning the surface of the glass substrate 100;

[0062] (S20) placing the cleaned glass substrate 100 into a vacuum chamber of a vacuum coating machine;

[0063] (S30) placing a Group IVB transition metal oxide, a Group VB transition metal oxide, and silicon dioxide into different crucibles, respectively;

[0064] (S40) The vacuum degree of the vacuum chamber is pumped to 3.0×10 -3 Pa below, the temperature of the vacuum chamber is heated to 100-300℃;

[0065] (S50) After pre-melting the Group IVB transition metal oxide and the Group VB transition metal oxide, the film formation rate of the Group IVB transition metal oxide and the Group VB transition metal oxide is controlled, and a transition metal oxide layer 200 is evaporated on one surface of the glass substrate 100;

[0066] (S60) After pre-melting silicon dioxide, the film formation rate of silicon dioxide is controlled, and a silicon oxide layer 300 is evaporated on the transition metal oxide layer 200;

[0067] (S70) Repeating the step of evaporating the transition metal oxide layer 200 and the silicon oxide layer 300 n-1 times, thereby forming an antireflection film on one surface of the glass substrate 100;

[0068] (S80) Repeat steps (S50) to (S70) to form an antireflection film on the other surface of the glass substrate 100 to obtain glass with a laser antireflection film.

[0069] The present application will be further described below with reference to specific embodiments, but the present application is not limited thereto.

[0070] Example 1

[0071] (1) After cleaning the surface of the glass substrate 100 with anhydrous ethanol, the glass is blown dry with clean high-pressure air.

[0072] (2) Place the cleaned glass substrate into the fixture of the work turntable, then hang the work turntable into the vacuum chamber of the vacuum coating machine, and place the Ta2O5, ZrO2 and SiO2 film materials into different crucibles to be evaporated.

[0073] (3) Pump the vacuum degree of the vacuum chamber to 3.0×10 -3 Pa, the temperature of the vacuum chamber is heated to 220 ° C, and the work turntable of the vacuum coating machine is turned on with a rotation speed of 30r / min to ensure that the glass substrate on the work turntable is heated evenly.

[0074] (4) The Ta2O5 film material is pre-melted, and the pre-melting procedure is: pre-melting at 20mA electron gun current for 10 minutes, pre-melting at 40mA electron gun current for 10 minutes, pre-melting at 60mA electron gun current for 10 minutes, and pre-melting at 80mA electron gun current for 10 minutes (performed in sequence); the ZrO2 film material is pre-melted, and the pre-melting procedure is: pre-melting at 20mA electron gun current for 10 minutes, pre-melting at 40mA electron gun current for 10 minutes, pre-melting at 60mA electron gun current for 10 minutes, and pre-melting at 80mA electron gun current for 10 minutes (performed in sequence). Then the baffle was opened to start formal coating. The film forming rate of Ta2O5 was 0.1nm / s, and the film forming rate of ZrO2 was 0.1464nm / s. The electron gun current was adjusted according to the film forming rate to produce a transition metal oxide layer 200 with a thickness of 42nm, wherein the mass ratio of Ta2O5 and ZrO2 was 1:1.

[0075] (5) The SiO2 film material is pre-melted. The pre-melting procedure is: pre-melting at an electron gun current of 20 mA for 5 minutes, and pre-melting at an electron gun current of 40 mA for 5 minutes (performed sequentially). The shutter is then opened to begin formal film deposition. The film deposition rate is 0.2 nm / s. The electron gun current is adjusted according to the film deposition rate, thereby forming a silicon oxide layer 300 with a thickness of 242 nm on the transition metal oxide layer 200.

[0076] (6) After the vacuum chamber is cooled to below 50° C., the glass substrate is turned over and steps (4) to (5) are repeated to sequentially evaporate a transition metal oxide layer 200 and a silicon oxide layer 300 on the other surface of the glass substrate.

[0077] (7) After the coating is completed, wait for the vacuum chamber to cool to below 50°C and take out the glass coated with transition metal oxide layer and silicon oxide layer on both sides. The structural diagram is as follows Figure 1 shown.

[0078] The glass prepared in this embodiment was subjected to spectral testing (Shimadzu UV spectrophotometer, model UV-1900i), and the transmittance test results are as follows: Figure 2 As shown. Figure 2 It can be seen that the laser transmittance at the 1064 nm band is as high as 99.6%, which indicates that the glass prepared in this embodiment has extremely high transmittance at the 1064 nm band.

[0079] Example 2

[0080] The method described in Example 1 is followed, except that the thickness of the transition metal oxide layer 200 is 197 nm, and the thickness of the silicon oxide layer 300 is 142 nm.

[0081] The glass prepared in this embodiment was subjected to spectral testing (Shimadzu UV spectrophotometer, model UV-1900i), and the transmittance test results are as follows: Figure 3 As shown. Figure 3 It can be seen that the laser transmittance at the 1064 nm band is as high as 99.6%, which indicates that the glass prepared in this embodiment has extremely high transmittance at the 1064 nm band.

[0082] Example 3

[0083] The method described in Example 1 is followed, except that the Group IVB transition metal oxide is HfO2 and the Group VB transition metal oxide is Nb2O5; steps (4) and (5) are repeated twice after step (5) and before step (6); and the transition metal oxide layer 200 and the silicon oxide layer 300 are repeatedly evaporated twice each after step (6) and before step (7), so that three transition metal oxide layers and three silicon oxide layers are alternately stacked on each surface of the glass substrate.

[0084] The glass prepared in this example was subjected to a spectrum test (Shimadzu UV spectrophotometer, model UV-1900i). The results showed that the laser transmittance at 1064 nm was 99.0%.

[0085] By comparing Example 1 and Example 3, it can be seen that when the IVB group transition metal oxide is ZrO2 and the VB group transition metal oxide is Ta2O5, only one transition metal oxide layer and one silicon oxide layer need to be stacked on each surface of the glass substrate to increase the laser transmittance in the 1064nm band to 99.5%. Compared with Example 3, the number of stacked layers is reduced, which greatly reduces the production cost.

[0086] Example 4

[0087] The method described in Example 1 is followed, except that the mass ratio of Ta2O5 to ZrO2 in step (4) is 2:1, and steps (4) and (5) are repeated once after step (5) and before step (6); and the transition metal oxide layer 200 and the silicon oxide layer 300 are repeatedly evaporated once each after step (6) and before step (7), so that two transition metal oxide layers and two silicon oxide layers are alternately stacked on each surface of the glass substrate.

[0088] The glass prepared in this embodiment was subjected to a spectrum test (Shimadzu UV spectrophotometer, model UV-1900i). The results showed that the laser transmittance at 1064 nm was 99.3%.

[0089] By comparing Example 1 and Example 4, it can be seen that selecting a suitable mass ratio of Ta2O5 and ZrO2 is beneficial to reducing the number of stacked layers of the antireflection film, thereby helping to reduce production costs.

[0090] Example 5

[0091] The method described in Example 1 is followed, except that the mass ratio of Ta2O5 to ZrO2 in step (4) is 1:2, and steps (4) and (5) are repeated once after step (5) and before step (6); and the transition metal oxide layer 200 and the silicon oxide layer 300 are repeatedly evaporated once each after step (6) and before step (7), so that two transition metal oxide layers and two silicon oxide layers are alternately stacked on each surface of the glass substrate.

[0092] The glass prepared in this embodiment was subjected to a spectrum test (Shimadzu UV spectrophotometer, model UV-1900i). The results showed that the laser transmittance at 1064 nm was 99.2%.

[0093] By comparing Example 1 and Example 4, it can be seen that selecting a suitable mass ratio of Ta2O5 and ZrO2 is beneficial to reducing the number of stacked layers of the antireflection film, thereby helping to reduce production costs.

[0094] Examples 6-9

[0095] The method described in Example 1 was followed, except that the parameters listed in Table 1 below were different from those in Example 1.

[0096] The glasses prepared in Examples 6-9 were subjected to spectral testing (Shimadzu UV spectrophotometer, model UV-1900i). The results are shown in Table 1 below.

[0097] Table 1

[0098]

[0099] It can be seen from Table 1 that the thicknesses of the transition metal oxide layer and the silicon oxide layer are within an appropriate range, which is beneficial to improving the laser transmittance of the glass at the 1064 nm band.

[0100] Comparative Example 1

[0101] The method described in Example 3 is followed, except that the material of the transition metal oxide layer is ZrO2.

[0102] The glass prepared in this comparative example was subjected to a spectrum test (Shimadzu UV spectrophotometer, model UV-1900i), and the results showed that the laser transmittance at 1064 nm was 97.0%, which was not satisfactory for use.

[0103] Comparative Example 2

[0104] The method described in Example 3 is followed, except that the material of the transition metal oxide layer is Ta2O5.

[0105] The glass prepared in this comparative example was subjected to a spectrum test (Shimadzu UV spectrophotometer, model UV-1900i), and the results showed that the laser transmittance at 1064 nm was 97.5%, which was not satisfactory for use.

[0106] The foregoing description is merely a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any modifications or substitutions that can be readily conceived by a person skilled in the art within the technical scope disclosed herein are intended to be encompassed within the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope of protection of the claims.

Claims

1. A laser antireflection film, characterized in that: include: n transition metal oxide layers (200) and n silicon oxide layers (300) are alternately stacked in sequence; Wherein, the material of each transition metal oxide layer (200) comprises a mixture of group IVB transition metal oxide and group VB transition metal oxide; n is a positive integer from 1 to 3; The IVB group transition metal oxide is ZrO2; the VB group transition metal oxide is Ta2O5; The mass ratio of Ta2O5 and ZrO2 is 2:1-1:

2.

2. The laser antireflection film according to claim 1, characterized in that: The thickness of each transition metal oxide layer (200) is 40-200 nm; the thickness of each silicon oxide layer (300) is 100-250 nm.

3. The laser antireflection film according to claim 1, characterized in that: n is 1 or 2.

4. The laser antireflection film according to claim 1, characterized in that: The laser anti-reflection film is arranged on both surfaces of a glass substrate (100) and forms a glass with a laser anti-reflection film together with the glass substrate (100); wherein the transition metal oxide layer (200) is close to the surface of the glass substrate (100), and the silicon oxide layer (300) is far away from the surface of the glass substrate (100).

5. The laser antireflection film according to claim 4, characterized in that: The transmittance of the glass at 1064nm wavelength is above 99%.

6. The laser antireflection film according to claim 5, characterized in that: The method for preparing glass with a laser anti-reflection film is characterized by comprising the following steps: Vacuum evaporation coating is used to alternately form n layers of transition metal oxide layers (200) and n layers of silicon oxide layers (300) on a surface of a glass substrate (100); Vacuum evaporation coating is used to alternately form n layers of transition metal oxide layers (200) and n layers of silicon oxide layers (300) on the other surface of the glass substrate (100), thereby producing the glass with the laser anti-reflection film.

7. The laser antireflection film according to claim 6, characterized in that: The vacuum evaporation coating is carried out in a vacuum chamber, and the heating temperature of the vacuum chamber is 100-300°C.

8. The laser antireflection film according to claim 7, characterized in that: The formation of each transition metal oxide layer (200) comprises: pre-melting the IVB group transition metal oxide and the VB group transition metal oxide in the vacuum chamber and then coating them.

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