A low noise amplifier circuit with multiple inductor coupling

Abstract

The present invention provides a multi-inductor coupled low-noise amplifier circuit, including: a main transistor, a gate inductor, a source inductor and a drain inductor; the gate of the main transistor is connected to one end of the gate inductor, and the other end of the gate inductor is connected to the signal; the source of the main transistor is connected to one end of the source inductor, and the other end of the source inductor is grounded; the drain of the main transistor is connected to one end of the drain inductor, and the other end of the drain inductor is connected to the output module; the gate inductor, the source inductor and the drain inductor are coupled in pairs to eliminate the noise generated by the main transistor. The low-noise amplifier circuit provided by the present invention can offset the noise generated by the main transistor through the coupling effect between the gate inductor, the source inductor and the drain inductor, and can enhance the gain to a certain extent, thereby effectively reducing the noise dilution of the low-noise amplifier, and solving the problem of how to reduce the noise coefficient of the low-noise amplifier.

Description

Technical Field

[0001] The present invention relates to the technical field of integrated circuits, and in particular to a multi-inductor coupled low-noise amplifier circuit. Background Art

[0002] Low noise amplifier (LNA) refers to an amplifier with a very low noise figure. It is generally used as a high-frequency or intermediate-frequency preamplifier for various radio receivers, as well as an amplifier circuit for highly sensitive electronic detection equipment. When amplifying weak signals, the noise of the amplifier itself may seriously interfere with the signal. Therefore, a low noise amplifier can be used to reduce its own noise to improve the output signal-to-noise ratio.

[0003] How to reduce the noise factor and how to increase the gain are the key points in the design of low noise amplifiers. Traditional design solutions generally adopt common gate noise elimination solutions or common source noise elimination solutions:

[0004] The common-gate noise elimination scheme is shown in Figure 1 (a). The noise (I_noise) of the common-gate tube M1 generates noise signals with opposite phases at the X node and the Y node. The noise at the X node is then amplified by the auxiliary tube M2 and reversed at the output end Z. The phase of the signal is the same at the X node and the Y node, so the signal at the output end Z is opposite to the signal at the Y node. Due to the differential output, the output signal is enhanced and the noise is cancelled.

[0005] The common source noise elimination scheme, as shown in Figure 1 (b), uses the feedback resistor Rf to give the noise at the common source tube M1 a path to feedback to the input end. The noise at the X node is then reversely amplified by the amplifier tube M2 and reversed at the output end Z; the M3 tube is a source follower, which transmits the signal and noise at the Y node to the output end, so the signal is enhanced at the output end and the noise is eliminated at the output end.

[0006] However, in the existing design schemes of low-noise amplifiers, whether it is a common-gate noise elimination scheme or a common-source noise elimination scheme, after the noise and signal phase are separated, they are amplified through the main path and the auxiliary path, and then the noise is eliminated at the output end. Therefore, only the noise of the main path M1 tube can be eliminated, while the noise of the auxiliary path M2 tube cannot be eliminated, thus limiting the noise factor from being further reduced; if the noise of the M2 tube is to be eliminated, the transconductance gm2 of the M2 tube needs to be increased, resulting in increased power consumption.

[0007] In addition, in the existing common-source noise elimination scheme, the feedback resistor Rf will also introduce noise, and this noise cannot be eliminated by the auxiliary circuit, which also limits the noise factor from being further reduced; in addition, the use of the auxiliary circuit tube M3 will further increase the overall power consumption of the low-noise amplifier. Summary of the invention

[0008] The object of the present invention is to provide a multi-inductor coupled low noise amplifier circuit to at least solve the problem of how to reduce the noise figure of the low noise amplifier.

[0009] In order to solve the above technical problems, the present invention provides a multi-inductor coupled low-noise amplifier circuit, comprising: a main transistor, a gate inductor, a source inductor and a drain inductor; the gate of the main transistor is connected to one end of the gate inductor, and the other end of the gate inductor is connected to a signal; the source of the main transistor is connected to one end of the source inductor, and the other end of the source inductor is grounded; the drain of the main transistor is connected to one end of the drain inductor, and the other end of the drain inductor is connected to an output module; the gate inductor, the source inductor and the drain inductor are coupled in pairs to eliminate the noise generated by the main transistor.

[0010] Optionally, in the multi-inductor coupled low noise amplifier circuit, the coupling coefficient between the gate inductance and the source inductance has a value range of -1 to -0.1.

[0011] Optionally, in the multi-inductor coupled low noise amplifier circuit, the coupling coefficient between the gate inductance and the drain inductance has a value range of -0.8 to -0.2.

[0012] Optionally, in the multi-inductor coupled low noise amplifier circuit, the coupling coefficient between the source inductance and the drain inductance has a value range of -1 to 1.

[0013] Optionally, in the multi-inductor coupled low-noise amplifier circuit, the multi-inductor coupled low-noise amplifier circuit also includes a feedback resistor; one end of the feedback resistor is connected between the gate of the main transistor and the gate inductor, and the other end is connected between the drain of the main transistor and the drain inductor.

[0014] Optionally, in the multi-inductor coupled low-noise amplifier circuit, the multi-inductor coupled low-noise amplifier circuit also includes a main circuit capacitor, one end of which is connected between the gate of the main circuit transistor and the gate inductor, and the other end of which is connected between the source of the main circuit transistor and the source inductor.

[0015] Optionally, in the multi-inductor coupled low-noise amplifier circuit, the output module includes a slave transistor and a slave inductor; the gate of the slave transistor is vacant; the source of the slave transistor is connected to the other end of the drain inductor; the drain of the slave transistor is connected to one end of the slave inductor; the other end of the slave inductor is connected to a power supply; and an output end is led out between the drain of the slave transistor and the slave inductor.

[0016] Optionally, in the multi-inductor coupled low noise amplifier circuit, the main path transistor is an NMOS tube, and the slave path transistor is an NMOS tube.

[0017] Optionally, in the multiple inductor coupled low noise amplifier circuit, when the layout of the multiple inductor coupled low noise amplifier circuit is designed, the gate inductor, the source inductor and the drain inductor are all octagonal annular metal strips on the layout, and the gate inductor, the source inductor and the drain inductor are nested with each other.

[0018] Optionally, in the multi-inductor coupled low-noise amplifier circuit, in a vertical projection of the layout, partial metal strips of the gate inductor, the source inductor and the drain inductor are arranged parallel to each other.

[0019] The multi-inductor coupled low-noise amplifier circuit provided by the present invention comprises: a main transistor, a gate inductor, a source inductor and a drain inductor; the gate of the main transistor is connected to one end of the gate inductor, and the other end of the gate inductor is connected to a signal; the source of the main transistor is connected to one end of the source inductor, and the other end of the source inductor is grounded; the drain of the main transistor is connected to one end of the drain inductor, and the other end of the drain inductor is connected to an output module; the gate inductor, the source inductor and the drain inductor are coupled in pairs to eliminate the noise generated by the main transistor. The multi-inductor coupled low-noise amplifier circuit provided by the present invention can offset the noise generated by the main transistor through the coupling effect between the gate inductor, the source inductor and the drain inductor, and can enhance the gain to a certain extent, thereby effectively reducing the noise dilution of the low-noise amplifier and solving the problem of how to reduce the noise coefficient of the low-noise amplifier. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] FIG. 1 (a) is a schematic diagram of a circuit using a common-gate noise elimination solution in the prior art;

[0021] FIG1( b ) is a circuit schematic diagram of a common source noise elimination solution in the prior art;

[0022] Figure 2 A schematic diagram of the main circuit structure of a multi-inductor coupled low noise amplifier circuit provided in this embodiment;

[0023] Figure 3 A complete circuit structure schematic diagram of a multi-inductor coupled low noise amplifier circuit provided in this embodiment;

[0024] Figure 4 A complete circuit structure schematic diagram of a low noise amplifier circuit with multiple inductor coupling and main circuit capacitors provided in this embodiment;

[0025] Figure 5 A schematic diagram of the circuit principle for coupling de-noising of gate inductance and source inductance in a multi-inductor coupled low-noise amplifier circuit provided in this embodiment;

[0026] Figure 6 A curve diagram showing the relationship between the coupling coefficient between the gate inductance and the source inductance, the noise coefficient and the gain provided in this embodiment;

[0027] Figure 7 A schematic diagram of the circuit principle of coupling de-noising of gate inductance and drain inductance in a multi-inductor coupled low-noise amplifier circuit provided in this embodiment;

[0028] Figure 8 A curve diagram showing the relationship between the coupling coefficient between the gate inductance and the drain inductance, the noise coefficient and the gain provided in this embodiment;

[0029] Fig. 9 A schematic diagram of the circuit principle for coupling noise removal of source inductance and drain inductance in a multi-inductor coupled low-noise amplifier circuit provided in this embodiment;

[0030] Fig.10 A curve diagram showing the relationship between the coupling coefficient between the source inductance and the drain inductance, the noise coefficient and the gain provided in this embodiment;

[0031] Fig.11 A schematic diagram of the circuit principle for de-noising the feedback resistor in the multi-inductor coupled low-noise amplifier circuit provided in this embodiment;

[0032] Fig.12 A layout design diagram of a multi-inductor coupled low noise amplifier circuit provided in this embodiment;

[0033] Fig.13 A comparison diagram of the gain and noise factor between the multi-inductor coupled low-noise amplifier circuit provided in this embodiment and the existing low-noise amplifier. DETAILED DESCRIPTION

[0034] The following is a further detailed description of the multi-inductor coupled low noise amplifier circuit proposed by the present invention in conjunction with the accompanying drawings and specific embodiments. It should be noted that the accompanying drawings are all in a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. In addition, the structure shown in the accompanying drawings is often a part of the actual structure. In particular, the emphasis of each accompanying drawing is different, and sometimes different proportions are used.

[0035] It should be noted that the terms "first", "second", etc. in the specification, claims and drawings of the present invention are used to distinguish similar objects in order to describe the embodiments of the present invention, rather than to describe a specific order or sequence. It should be understood that the structures used in this way can be interchanged under appropriate circumstances. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0036] This embodiment provides a multi-inductor coupled low noise amplifier circuit, such as Figure 2 As shown, it includes: a main transistor M1, a gate inductor Lg, a source inductor Ls and a drain inductor Ld; the gate of the main transistor M1 is connected to one end of the gate inductor Lg, and the other end of the gate inductor Lg is connected to the signal Vs; the source of the main transistor M1 is connected to one end of the source inductor Ls, and the other end of the source inductor Ls is grounded; the drain of the main transistor M1 is connected to one end of the drain inductor Ld, and the other end of the drain inductor Ld is connected to the output module; the gate inductor Lg, the source inductor Ls and the drain inductor Ld are coupled to each other to eliminate the noise generated by the main transistor M1.

[0037] The multi-inductor coupled low-noise amplifier circuit provided in this embodiment can offset the noise generated by the main transistor M1 through the coupling effect between the gate inductance Lg, the source inductance Ls and the drain inductance Ld, and can enhance the gain to a certain extent, thereby effectively reducing the noise dilution of the low-noise amplifier and solving the problem of how to reduce the noise coefficient of the low-noise amplifier.

[0038] In practical applications, such as Figure 3 As shown, the output module includes a slave transistor M2 and a slave inductor Lo; the gate of the slave transistor M2 is vacant; the source of the slave transistor M2 is connected to the other end of the drain inductor Ld; the drain of the slave transistor M2 is connected to one end of the slave inductor Lo; the other end of the slave inductor Lo is connected to a power supply; an output terminal Vout is drawn between the drain of the slave transistor M2 and the slave inductor Lo.

[0039] In a specific embodiment, the master transistor M1 is an NMOS transistor, and the slave transistor M2 is an NMOS transistor.

[0040] And, if Figure 3As shown, the multi-inductor coupled low noise amplifier circuit provided in this embodiment further includes a feedback resistor Rf; one end of the feedback resistor Rf is connected between the gate of the main transistor M1 and the gate inductor Lg, and the other end is connected between the drain of the main transistor M1 and the drain inductor Ld. In this way, through the feedback resistor Rf, the noise can be fed back to the input end to achieve phase separation of the signal and the noise, which is conducive to the coupling effect between the inductors to eliminate the noise; at the same time, since the feedback resistor Rf can be equivalent to a parallel resistor at the input end, it can help to widen the input bandwidth.

[0041] Better, such as Figure 4 As shown, the multi-inductor coupled low noise amplifier circuit provided in this embodiment further includes a main circuit capacitor Cl, one end of which is connected between the gate of the main circuit transistor M1 and the gate inductor Lg, and the other end of which is connected between the source of the main circuit transistor M1 and the source inductor Ls.

[0042] The multi-inductor coupled low-noise amplifier circuit provided in this embodiment adds a main circuit capacitor Cl between the source and the gate of the main circuit transistor M1. At this time, the input impedance is equivalent to the form of an inductor, a capacitor, and a resistor connected in series. When the size of the main circuit transistor M1 is determined, the real part of the input impedance can be adjusted by adjusting the capacitance value of the main circuit capacitor Cl, thereby achieving noise matching and gain matching. At the same time, increasing the main circuit capacitor Cl can also increase the freedom of input impedance adjustment to a certain extent.

[0043] The following is a detailed description of the principle that the multi-inductor coupled low noise amplifier circuit provided in this embodiment has a low noise coefficient:

[0044] like Figure 5 As shown, the main working principle of the coupling de-noising between the gate inductor Lg and the source inductor Ls is: the noise I_noise generated at the main transistor M1 will generate a noise voltage Vnd at the drain and a noise voltage Vns at the source, wherein the noise voltage Vnd and the noise voltage Vns are opposite (such as Figure 5 The noise voltage Vns is coupled to the gate of the main transistor through the coupling of the gate inductance Lg and the source inductance Ls, and forms a noise voltage Vng at the gate (as shown in the red noise signal in the figure). Figure 5 The noise voltage Vng obtained by coupling is reversely amplified at the drain through the main transistor M1, that is, a noise voltage Vng_amp is formed at the drain (as shown in the pink noise signal in FIG. 1 ). Figure 5At this time, the original noise voltage Vnd at the drain and the noise voltage Vng_amp obtained by coupling amplification are in opposite phases, thus achieving noise cancellation, that is, the noise at the drain of the main transistor M1 is effectively removed. At the same time, the coupling between the gate inductance Lg and the source inductance Ls will also convert the signal (effective signal, such as Figure 5 The green sinusoidal signal in the middle is coupled from the gate of the main transistor M1 to the source, and the phase of the signal at the source is opposite to that at the gate. The equivalent gate-source voltage Vgs increases, so the equivalent gain increases.

[0045] In this way, through the coupling effect between the gate inductance Lg at the gate of the main transistor M1 and the source inductance Ls at the source, not only the noise at the drain of the main transistor M1 can be effectively eliminated, but also the signal gain can be effectively increased.

[0046] The coupling coefficient between the gate inductance Lg and the source inductance Ls is k1, as Figure 6 As shown, when the coupling coefficient k1 between the gate inductance Lg and the source inductance Ls is in the range of -1 to -0.1, the low noise amplifier provided in this embodiment can have a higher gain while having a lower noise coefficient.

[0047] like Figure 7 As shown in FIG. 1 , the main principle of the coupling de-noising between the gate inductor Lg and the drain inductor Ld is as follows: the noise generated at the drain of the main transistor M1 is coupled to the gate of the main transistor M1 through the coupling effect of the gate inductor Lg and the drain inductor Ld, and a noise voltage is formed at the gate (such as Figure 7 The noise voltage at the gate and the noise voltage at the drain are in phase. The noise voltage coupled at the gate is reversely amplified at the drain through the main transistor M1, that is, a noise voltage is formed at the drain (as shown in the red noise signal in the figure). Figure 7 As shown in the pink noise signal in the figure), at this time, the original noise voltage at the drain and the noise voltage obtained by coupling amplification are in opposite phases, thereby achieving noise cancellation, that is, the noise at the drain of the main transistor M1 is effectively removed.

[0048] If the gate and drain terminals of the main transistor M1 of the low noise amplifier are connected to a feedback resistor Rf, the gain will be improved to a certain extent due to the influence of the feedback resistor Rf on the input terminal.

[0049] In this way, through the coupling effect between the gate inductance Lg at the gate of the main transistor M1 and the drain inductance Ld at the drain, not only can the noise at the drain of the main transistor M1 be effectively eliminated, but also the signal gain can be effectively increased with the help of the feedback resistor Rf.

[0050] The coupling coefficient between the gate inductance Lg and the drain inductance Ld is k2, as Figure 8 As shown, when the coupling coefficient k2 between the gate inductance Lg and the drain inductance Ld is in the range of -0.8 to -0.2, the low noise amplifier provided in this embodiment can have a higher gain while having a lower noise coefficient.

[0051] like Fig. 9 As shown, the main working principle of the coupling de-noising between the source inductor Ls and the drain inductor Ld is: the main transistor M1 generates a noise voltage Vn1 at the drain and a noise Vn2 at the source, wherein the noise voltage Vn1 and the noise voltage Vn2 are opposite (such as Fig. 9 The noise voltage Vn1 is coupled to the source of the main transistor M1 through the coupling effect of the source inductance Ls and the drain inductance Ld, and forms a noise voltage Vn3 at the source (as shown in the red noise signal in the figure). Fig. 9 As shown in the pink noise signal in the figure, the noise voltage Vn3 has the same phase as the noise voltage Vn1, that is, the phase is opposite to the noise voltage Vn2. Therefore, at the source of the main transistor M1, the original noise voltage Vn2 and the coupled noise voltage Vn3 achieve noise cancellation due to their opposite phases, that is, the noise at the source of the main transistor M1 is effectively removed. Similarly, the noise voltage Vn2 is coupled to the drain of the main transistor M1 through the coupling of the source inductance Ls and the drain inductance Ld, and forms a noise voltage Vn4 at the drain (as shown in the figure). Fig. 9 As shown in the pink noise signal in the figure, the noise voltage Vn4 has the same phase as the noise voltage Vn2, that is, the phase is opposite to the noise voltage Vn1. Therefore, at the drain of the main transistor M1, the original noise voltage Vn1 and the coupled noise voltage Vn4 achieve noise cancellation due to their opposite phases, that is, the noise at the drain of the main transistor M1 is effectively removed.

[0052] In this way, the noise at the source and drain of the main transistor M1 can be effectively eliminated through the coupling effect between the source inductance Ls at the source and the drain inductance Ld at the drain of the main transistor M1 .

[0053] The coupling coefficient between the source inductance Ls and the drain inductance Ld is k2, as Fig.10 As shown, when the coupling coefficient k2 between the source inductance Ls and the drain inductance Ld is in the range of -1 to 1, the low noise amplifier provided in this embodiment can have a higher gain while having a lower noise coefficient.

[0054] like Fig.11As shown, if the gate and drain of the main transistor M1 in the low noise amplifier are also connected to the feedback resistor Rf, the feedback resistor Rf separates the phase of the signal and noise at the gate of the main transistor M1, and outputs the noise to the drain. Afterwards, through the coupling effect of the gate inductance Lg and the drain inductance Ld (as described above), the separated noise is coupled and output to the drain in reverse, thereby achieving the cancellation of the gate noise at the drain of the main transistor M1. At the same time, the feedback effect of the feedback resistor Rf will also increase the input bandwidth.

[0055] In practical applications, the inductance values ​​of the gate inductor Lg, source inductor Ls and drain inductor Ld and the coupling coefficient between them, as well as the models and parameters of components such as feedback resistors and main circuit capacitors can be reasonably selected according to the models and parameters of the actually selected transistors and other components, as well as the characteristics of the input signal. In this way, according to the actual design needs, the low-noise amplifier can have a lower noise coefficient and a stronger gain, thereby making the low-noise amplifier have better performance.

[0056] This embodiment also provides a layout design scheme for a multi-inductor coupled low noise amplifier circuit, such as Fig.12 As shown, when the layout design of the multi-inductor coupled low noise amplifier circuit is performed, the gate inductor (such as Fig.12 As shown by the pink broken line in the middle), the source inductor ((as shown in Fig.12 The green dashed line in the middle)) and the leakage inductance (as shown in Fig.12 The blue broken line in the middle shows that the inductor is an octagonal ring metal strip on the layout, and the gate inductor, the source inductor and the drain inductor are nested with each other. The inductor design of the octagonal ring metal strip structure is well known to those skilled in the art, and this application will not repeat it.

[0057] In this embodiment, the gate inductor, the source inductor and the drain inductor are designed as metal stacking structures of different layers in the layout, so that the gate inductor, the source inductor and the drain inductor can be coupled with each other while reducing the area of ​​the layout, which is beneficial to the integrated manufacturing of the low-noise amplifier provided by this embodiment.

[0058] Preferably, in order to improve the coupling efficiency between the gate inductor, the source inductor and the drain inductor, in this embodiment, some metal strips of the gate inductor, the source inductor and the drain inductor are arranged parallel to each other. Fig.12 As shown, in the octagonal structure, the metal strips on each side of the gate inductor, the source inductor and the drain inductor are arranged in parallel.

[0059] Fig.13This is a schematic diagram showing the performance comparison between the multi-inductor coupled low noise amplifier circuit provided in this embodiment and the existing low noise amplifier. Fig.13 As shown, the solid line represents the noise coefficient curve and gain curve of the multi-inductor coupled low noise amplifier circuit provided in this embodiment, and the dotted line represents the noise coefficient curve and gain curve of the existing low noise amplifier; the group of curves indicated by the pink arrows reflect the noise coefficient comparison between the multi-inductor coupled low noise amplifier circuit provided in this embodiment and the existing low noise amplifier, and the group of curves indicated by the red arrows reflect the gain comparison between the multi-inductor coupled low noise amplifier circuit provided in this embodiment and the existing low noise amplifier. Fig.13 It can be seen that the multi-inductor coupled low noise amplifier circuit provided in this embodiment has better performance in noise figure and gain at various frequencies compared with the existing low noise amplifier, wherein the noise figure is reduced by about 0.7dB and the gain is optimized by about 2dB.

[0060] It should be noted that the various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other. In addition, the different parts between the various embodiments can also be used in combination with each other, and the present invention is not limited to this.

[0061] The multi-inductor coupled low-noise amplifier circuit provided in this embodiment includes: a main transistor, a gate inductor, a source inductor and a drain inductor; the gate of the main transistor is connected to one end of the gate inductor, and the other end of the gate inductor is connected to the signal; the source of the main transistor is connected to one end of the source inductor, and the other end of the source inductor is grounded; the drain of the main transistor is connected to one end of the drain inductor, and the other end of the drain inductor is connected to the output module; the gate inductor, the source inductor and the drain inductor are coupled in pairs to eliminate the noise generated by the main transistor. The multi-inductor coupled low-noise amplifier circuit provided by the present invention can offset the noise generated by the main transistor through the coupling effect between the gate inductor, the source inductor and the drain inductor, and can enhance the gain to a certain extent, thereby effectively reducing the noise dilution of the low-noise amplifier and solving the problem of how to reduce the noise coefficient of the low-noise amplifier.

[0062] The above description is only a description of the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention. Any changes or modifications made by a person skilled in the art in the field of the present invention based on the above disclosure shall fall within the scope of protection of the claims.

Claims

1. A multi-inductor coupled low noise amplifier circuit, characterized in that: include: A main transistor, a gate inductor, a source inductor and a drain inductor; the gate of the main transistor is connected to one end of the gate inductor, and the other end of the gate inductor is connected to a signal; the source of the main transistor is connected to one end of the source inductor, and the other end of the source inductor is grounded; the drain of the main transistor is connected to one end of the drain inductor, and the other end of the drain inductor is connected to an output module; the gate inductor, the source inductor and the drain inductor are coupled to each other to eliminate the noise generated by the main transistor; wherein, The coupling coefficient between the gate inductance and the source inductance ranges from -1 to -0.1; the coupling coefficient between the gate inductance and the drain inductance ranges from -0.8 to -0.2; and the coupling coefficient between the source inductance and the drain inductance ranges from -1 to 1.

2. The multi-inductor coupled low noise amplifier circuit according to claim 1, characterized in that: The multi-inductor coupled low noise amplifier circuit also includes a feedback resistor; one end of the feedback resistor is connected between the gate of the main transistor and the gate inductor, and the other end is connected between the drain of the main transistor and the drain inductor.

3. The multi-inductor coupled low noise amplifier circuit according to claim 1, characterized in that: The multi-inductor coupled low noise amplifier circuit further includes a main circuit capacitor, one end of which is connected between the gate of the main circuit transistor and the gate inductor, and the other end of which is connected between the source of the main circuit transistor and the source inductor.

4. The multi-inductor coupled low noise amplifier circuit according to claim 1, characterized in that: The output module includes a slave transistor and a slave inductor; the gate of the slave transistor is vacant; the source of the slave transistor is connected to the other end of the drain inductor; the drain of the slave transistor is connected to one end of the slave inductor; the other end of the slave inductor is connected to a power supply; An output terminal is drawn between the drain of the slave transistor and the slave inductor.

5. The multi-inductor coupled low noise amplifier circuit according to claim 4, characterized in that: The master transistor is an NMOS transistor, and the slave transistor is an NMOS transistor.

6. The multi-inductor coupled low noise amplifier circuit according to claim 1, characterized in that: When the layout of the multi-inductor coupled low-noise amplifier circuit is designed, the gate inductor, the source inductor and the drain inductor are all octagonal annular metal strips on the layout, and the gate inductor, the source inductor and the drain inductor are nested with each other.

7. The multi-inductor coupled low noise amplifier circuit according to claim 6, characterized in that: In the vertical projection of the layout, some metal strips of the gate inductor, the source inductor and the drain inductor are arranged parallel to each other.

Images