Atomic source devices and atomic gas chambers

Abstract

The present application provides an atomic source device and an atomic gas chamber, wherein the atomic source device comprises a first electrode layer, an ion storage layer, an ion conduction layer, and a second electrode layer which are stacked in sequence, wherein the first electrode layer and the second electrode layer are electrically connected via a control power supply, the ion conduction layer comprises an alkali metal ion conductor, and the second electrode layer comprises a pore penetrating the second electrode layer. The atomic source device provided by the present application can realize the regulation of the alkali metal gas density at the atomic source end, and can reduce the complexity of the alkali metal gas density regulation operation and improve the accuracy of the alkali metal density regulation.

Description

Technical Field

[0001] The present application relates to the technical field of atomic sources, and in particular to an atomic source device and an atomic gas chamber. Background Art

[0002] The gaseous alkali metal atom system is composed of a certain number of alkali metal atom gases in thermal equilibrium at a specific temperature and pressure. Its unique physical properties make it a research focus in the fields of simulation of condensed matter physics, quantum field theory and spin models. It can be used to simulate and study complex problems such as condensed matter physics, quantum field theory and spin models, and is crucial to promoting the application of technologies such as quantum computing, quantum simulation, quantum communication and quantum precision measurement.

[0003] Since gaseous alkali metal atoms are very active and easily react with air, they need to be encapsulated in a vacuum-sealed space, such as an atomic gas chamber. Dynamically controlling the density of alkali metal gas in the atomic gas chamber is of great significance to the reliability of precision measurement results and the application performance of sensors. Taking the rubidium atomic clock as an example, too high a density of rubidium atomic gas will cause negative problems such as pressure broadening, collision displacement, optical frequency shift, and shortened coherence time, thereby reducing the accuracy of the atomic clock; while low-density rubidium atomic gas will reduce the signal-to-noise ratio. Therefore, a suitable rubidium atomic gas density is conducive to achieving the best balance between sensitivity and accuracy, and is one of the key technologies for developing high-performance atomic clocks. For the atomic gas chamber, if the density of alkali metal atomic gas in the atomic gas chamber can be dynamically and accurately controlled, the problem of large external temperature disturbances in the atomic gas chamber can be solved, which helps to extend the service life of the gas chamber and promote the miniaturization of the device. However, alkali metal atomic gas is usually encapsulated in a small vacuum atomic gas chamber, and it is difficult to dynamically control its density.

[0004] At present, the common method for controlling the density of alkali metal gas in the atomic gas chamber is to control the temperature of the atomic gas chamber. In practical applications, the density of alkali metal atomic gas and temperature will show an inverse temperature exponential relationship within a certain range. In the thermal equilibrium state, the thermal motion speed of gas molecules is mainly affected by temperature. Therefore, adjusting the temperature can not only change the thermal motion speed of molecules, but also effectively adjust the gas density. Nevertheless, this method also faces some challenges. For example, in order to ensure the accuracy of the measurement results, it is necessary to ensure that the temperature distribution in the entire atomic gas chamber is uniform to avoid the density gradient caused by uneven temperature, which will increase the complexity of temperature control and the difficulty of operation. Moreover, there may be a deviation between the temperature measured in the atomic gas chamber in practical applications and the alkali metal gas density inside it, which further increases the complexity of temperature control and the inaccuracy of density control results. In addition, a large adjustment of the temperature of the atomic gas chamber, especially cooling, is often accompanied by a large amount of energy and time consumption. In order to maintain a stable temperature, a special insulation system is also required, which undoubtedly increases the complexity of the system. Summary of the invention

[0005] Based on this, the present application provides an atomic source device and an atomic gas chamber that are simple to operate and can relatively accurately control the density of alkali metal gas.

[0006] The first aspect of the present application provides an atomic source device, comprising a first electrode layer, an ion storage layer, an ion conduction layer, and a second electrode layer stacked in sequence, the first electrode layer and the second electrode layer being electrically connected via a control power supply, the ion conduction layer comprising an alkali metal ion conductor, and the second electrode layer comprising a channel penetrating the second electrode layer.

[0007] In some embodiments of the present application, the alkali metal ion conductor includes at least one of the alkali metal ion solid electrolytes M-β / β''-Al2O3 and M-β-Al2O3, and M includes at least one of Rb, Li, Na, K and Cs;

[0008] Optionally, the alkali metal ion conductor includes an alkali metal ion solid electrolyte Rb-β-Al2O3.

[0009] In some embodiments of the present application, the ratio of the total area of ​​the orthographic projections of the channels on the surface of the second electrode layer to the area of ​​the main surface of the second electrode layer is 5% to 95%.

[0010] In some embodiments of the present application, the material of the first electrode layer and the material of the second electrode layer each independently include a conductive material;

[0011] Optionally, the conductive material includes at least one of a conductive metal material and a conductive carbon material.

[0012] In some embodiments of the present application, at least one of the following conditions is met:

[0013] (1) The conductive metal material includes at least one of gold, platinum, titanium, chromium, tungsten, silver, copper, aluminum, cobalt, nickel, molybdenum, chromium and tantalum;

[0014] (2) The conductive carbon material includes at least one of graphene, graphite and amorphous carbon.

[0015] In some embodiments of the present application, the ion storage layer comprises a negative electrode active material;

[0016] Optionally, the negative electrode active material includes a carbon material;

[0017] Further optionally, the carbon material includes at least one of graphene, graphite, amorphous carbon, carbon nanotubes and carbon molecular sieves.

[0018] In some embodiments of the present application, the ion storage layer further comprises at least one of a conductive agent and a binder;

[0019] Optionally, the conductive agent includes at least one of conductive carbon black, conductive graphite, Ketjen black, acetylene black, carbon nanotubes and carbon nanofibers;

[0020] Optionally, the binder includes at least one of polyvinylidene fluoride, sodium carboxymethyl cellulose, styrene-butadiene rubber and polytetrafluoroethylene;

[0021] Optionally, the mass ratio of the negative electrode active material, the conductive agent and the binder is 9:0.5:0.5 to 6:2:2.

[0022] In some embodiments of the present application, a heating component is further included, wherein the heating component is connected to one of the first electrode layer, the ion storage layer, the ion conduction layer and the second electrode layer;

[0023] Optionally, the heating component is connected to the second electrode layer, and the heating component and at least part of the holes of the second electrode layer do not overlap.

[0024] The second aspect of the present application provides an atomic gas chamber, comprising the atomic source device described in the first aspect of the present application.

[0025] In some embodiments of the present application, the atomic gas chamber contains alkali metal atomic gas.

[0026] Compared with the temperature control method for controlling the density of alkali metal gas, the atomic source device provided by the present application can directly interact with alkali metal atoms, which can reduce the error caused by heat loss in the temperature control method, and can effectively improve the accuracy of controlling the density of alkali metal gas. At the same time, the atomic source device provided by the present application is more suitable for complex external environments. For example, when the external environment is high temperature, the power consumption of the refrigeration process of the temperature control method is huge (usually several watts to tens of watts), while the atomic source device provided by the present application can reduce the density in the atomic gas chamber with only a small power consumption (<10 mW), which is conducive to reducing the complexity of the alkali metal gas density control operation and reducing energy consumption. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 This is a schematic diagram of the structure of an atomic source device according to one embodiment of the present application.

[0028] Figure 2 It is a schematic diagram of the cross-sectional structure of an atomic source device according to one embodiment of the present application.

[0029] Figure 3 This is a schematic diagram of the structure of an atomic source device according to one embodiment of the present application.

[0030] Figure 4 This is a schematic diagram of the working principle of an atomic source device according to one embodiment of the present application.

[0031] Figure 5 This is a schematic diagram of the working principle of an atomic source device according to one embodiment of the present application.

[0032] Explanation of reference numerals: 1 first electrode layer; 2 ion storage layer; 3 ion conduction layer; 4 second electrode layer; 5 control power supply; 6 wire, 7 alkali metal atom; 41 channel. DETAILED DESCRIPTION

[0033] In order to facilitate understanding of the present application, the present application will be described more comprehensively below. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present application more thorough and comprehensive.

[0034] For simplicity, this application only explicitly discloses some numerical ranges. However, any lower limit can be combined with any upper limit to form an unclearly recorded range; and any lower limit can be combined with other lower limits to form an unclearly recorded range, and any upper limit can be combined with any other upper limit to form an unclearly recorded range. In addition, although not clearly recorded, each point or single value between the range endpoints is included in the range. Thus, each point or single value can be combined with any other point or single value as its own lower limit or upper limit or with other lower limits or upper limits to form an unclearly recorded range.

[0035] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application. It should be noted that, unless otherwise specified, the term "and / or" used herein includes any and all combinations of one or more related listed items, and "above" and "below" are inclusive of the number, and the meaning of "multiple" in "one or more" is more than two.

[0036] In addition, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0037] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0038] The above application content of the present application is not intended to describe each disclosed embodiment or each implementation in the present application. The following description more specifically illustrates exemplary embodiments. In many places throughout the application, guidance is provided by a series of examples, which can be used in various combinations. In each example, enumeration is only used as a representative group and should not be interpreted as exhaustive.

[0039] The inventor has found through research that, at present, the alkali metal gas in the atomic gas chamber usually requires the corresponding alkali metal atomic source to be obtained through physical or chemical reactions, for example, the thermal reaction of metal rubidium, zirconium aluminum alloy and alkali metal chromate compound, the thermal reaction of alkali metal chloride and elemental calcium, the photodecomposition reaction of alkali metal azide, etc. However, in the process of obtaining alkali metal gas through physical or chemical reactions, the alkali metal atomic source can only release alkali metal atoms, and the released alkali metal atoms cannot be reversely recovered. In this way, it is impossible to control the density of the alkali metal gas in the atomic gas chamber from the perspective of the alkali metal atomic source. The control of the alkali metal gas can only be achieved by controlling the temperature of the atomic gas chamber. As mentioned above, the complexity and difficulty of the operation are high and the control result is inaccurate. Accordingly, the present application proposes the following technical solution, which can effectively improve the accuracy of the control result by controlling the density of the alkali metal gas in the atomic gas chamber from the perspective of the alkali metal atomic source, while reducing the complexity of the control system and operation.

[0040] The first aspect of the present application provides an atomic source device, see Figure 1 and Figure 2 , comprising a first electrode layer 1, an ion storage layer 2, an ion conduction layer 3 and a second electrode layer 4 which are stacked in sequence, the first electrode layer 1 and the second electrode layer 4 are electrically connected via a control power supply 5, the ion conduction layer 3 comprises an alkali metal ion conductor, and the second electrode layer 4 comprises a pore 41 penetrating the second electrode layer.

[0041] It should be noted that the first electrode layer, the ion storage layer, the ion conduction layer and the second electrode layer in the above-mentioned atomic source device need to be closely attached together to form an effective ion path.

[0042] It should be noted that the channel penetrates the second electrode layer along the thickness direction of the second electrode layer, that is, the stacking direction of each layer in the atomic source device.

[0043] The above-mentioned atomic source device provided in this application, see Figure 3 By utilizing the electrochemical reversible principle, the alkali metal atoms / ions in the alkali metal gas can be recycled and released. Taking the alkali metal atoms as Rb atoms and the material of the first electrode layer as a carbon-based material as an example, the specific working principle is as follows:

[0044] See also Figure 4 In the atomic gas chamber containing alkali metal gas, alkali metal atoms (such as Rb atoms) in the alkali metal gas can be adsorbed on the upper surface of the second electrode layer 4 of the atomic source device. After the control power supply 5 applies a forward voltage, the adsorbed alkali metal atoms are ionized into alkali metal ions (such as Rb + ); Under the drive of the external electric field, the alkali metal ions enter the ion conduction layer 3 through the pores 41 of the second electrode layer, and migrate to the ion storage layer 2 through the ion conduction layer 3, and combine with the negatively charged ions contained in the ion storage layer 2 to form alkali metal ion compounds in the ion storage layer 2, thereby realizing the recovery and storage of alkali metal atoms.

[0045] See also Figure 5 When the control power supply 5 applies a negative voltage, the alkali metal ion compound in the ion storage layer 2 can decompose and release alkali metal ions (such as Rb + ), driven by an external electric field, the alkali metal ions migrate to the upper surface of the ion conducting layer 3 through the conduction effect of the ion conducting layer 3, and combine with electrons to be reduced to alkali metal atoms (such as Rb atoms); after the alkali metal atoms are endowed with higher energy (such as heating), they can pass through the pores 41 of the second electrode layer 4 and escape from the upper surface of the ion conducting layer 3, so that the desorption and release of the alkali metal atoms can be achieved.

[0046] In this way, the above-mentioned atomic source device provided by the present application, under the driving action of the control power supply, the alkali metal atoms / ions can be recycled and released in the atomic source device, and the recovery of alkali metal atoms can be achieved, which can significantly improve the utilization rate of atoms and the economy of the system. Compared with the traditional method of obtaining alkali metal atoms, the above-mentioned atomic source device provided by the present application can not only release alkali metal atoms, but also recover alkali metal atoms, thereby achieving the purpose of actively controlling alkali metal atoms. In addition, the atomic source provided by the present application is also a very efficient alkali metal atom releaser, with very low power consumption, can be implanted in the atomic gas chamber, and is compatible with the miniaturization of the atomic system and other advantages.

[0047] At the same time, since the atomic source device provided by the present application has the function of recovering gaseous alkali metal atoms, the amount of alkali metal atoms in the atomic gas chamber can be controlled through the release / recovery function. In this way, the density of the alkali metal gas in the atomic gas chamber can be dynamically and accurately regulated at the atomic source end, which can effectively improve the accuracy of the regulation results. This control is crucial to improving the accuracy of atomic clocks, the efficiency of quantum computers, and the stability of quantum communication systems. Compared with traditional temperature control methods, the atomic source provided by the present application is more energy-efficient and efficient in adjusting the density of alkali metal atomic gas, which reduces a lot of energy consumption, especially in applications that require frequent density adjustment. This advantage is particularly obvious.

[0048] In addition, the atomic source device provided by the present application provides a more stable and reliable way to control the density of alkali metal atomic gas, reduces the density fluctuation and gradient problems caused by uneven temperature during temperature control, and can effectively enhance the stability and reliability of the system. Moreover, the design of the atomic source device is more compact, which is conducive to the miniaturization and integration of the equipment, which is of great significance for the manufacture of smaller and more efficient quantum devices and precision measuring instruments. In addition, the ability of the atomic source device to accurately control the density of alkali metal atomic gas can provide a wider range of application possibilities in multiple fields such as quantum technology, precision measurement, and high-precision sensors.

[0049] It can be understood that in the second electrode layer, the pores penetrating the second electrode layer can be used as release / recovery channels for alkali metal atoms, and the main body of the second electrode layer except the pores can be used to reduce / ionize alkali metal atoms.

[0050] It can be understood that the controlled power supply can provide an external electric field for the recovery and release of alkali metal atoms / ions, which is used for the ionization / reduction of alkali metal atoms.

[0051] In some embodiments, see Figure 1 , the control power supply 5 can electrically connect the first electrode layer 1 and the second electrode layer 4 through the wire 6.

[0052] It can be understood that the “electrical connection” mentioned in the present application refers to the connection between the first electrode layer and the second electrode layer achieved through the transmission of electrons.

[0053] It can be understood that the ion conducting layer can be used to transport and migrate alkali metal ions, thereby achieving conduction of alkali metal ions between the second electrode layer and the ion storage layer.

[0054] It can be understood that the ion storage layer can be used to store alkali metal ions, which contain negatively charged ions, and the alkali metal ions that migrate to the ion storage layer can combine with the negatively charged ions to form alkali metal ion compounds, thereby achieving the storage of alkali metal ions.

[0055] In some embodiments, the alkali metal ion conductor includes at least one of alkali metal ion solid electrolytes M-β / β''-Al2O3 and M-β-Al2O3, and M includes at least one of Rb, Li, Na, K and Cs.

[0056] The above-mentioned alkali metal ion solid electrolyte is rich in alkali metal ions M that can migrate rapidly. + , when M + After reaching the upper surface of the ion-conducting layer and contacting the second electrode layer, they quickly gain electrons and are reduced to M 0 This reduction process is fast and precise, ensuring pure M 0 can be effectively released from the atomic source device. In addition, the reversible design of the atomic source device allows it to not only release M 0 , and can also recapture and store M through a reverse electrochemical process 0 , providing a new method for regulating the density of alkali metal atoms.

[0057] In some embodiments, the alkali metal ion conductor includes an alkali metal ion solid electrolyte Rb-β-Al2O3. Rb-β-Al2O3 is a pure phase, which can effectively improve the conductivity of the ion conduction layer to alkali metal ions and improve the recovery / release rate of alkali metal atoms.

[0058] In some embodiments, the ratio of the total area of ​​the orthographic projection of the pores on the surface of the second electrode layer to the area of ​​the surface of the second electrode layer body is 5% to 95%. For example, the ratio of the two areas can be 5%, 7%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95% or any range thereof.

[0059] It can be understood that the "surface of the second electrode layer" mentioned in the present application refers to the surface of the second electrode layer adjacent to the ion storage layer; the "area of ​​the surface of the second electrode layer body" refers to the total area of ​​the remaining part on the surface of the second electrode layer excluding the area occupied by the pores.

[0060] It should be noted that the shape of the orthographic projection of the pores contained in the second electrode layer on the surface of the second electrode layer is not limited, for example, it can be circular, elliptical, rectangular, parallelogram, etc.

[0061] The ratio of the total area of ​​the orthographic projection of the pores on the surface of the second electrode layer to the area of ​​the second electrode layer body surface is within the above range, which can protect the material for preparing the second electrode layer and the configuration of the second electrode layer.

[0062] In some embodiments, the material of the first electrode layer and the material of the second electrode layer each independently include a conductive material.

[0063] The material of the first electrode layer and the material of the second electrode layer include a conductive material, which enables the first electrode layer and the second electrode layer together with a control power supply to provide an external driving electric field for realizing recovery / release of alkali metal atoms.

[0064] In some embodiments, the conductive material includes at least one of a conductive metal material and a conductive carbon material.

[0065] In some embodiments, the conductive metal material includes at least one of gold, platinum, titanium, chromium, tungsten, silver, copper, aluminum, cobalt, nickel, molybdenum, chromium, and tantalum.

[0066] In some embodiments, the conductive carbon material includes at least one of graphene, graphite, and amorphous carbon.

[0067] In some embodiments, the ion storage layer includes a negative electrode active material.

[0068] It can be understood that the "negative electrode active material" mentioned in the present application refers to the traditional negative electrode active material that can be used in secondary batteries (such as lithium-ion batteries and sodium-ion batteries). Under the driving action of an external electric field, alkali metal ions can be embedded in the negative electrode active material and combine with the negatively charged ions in the negative electrode active material to form alkali metal ion compounds, thereby realizing the storage of alkali metal ions.

[0069] In some embodiments, the negative electrode active material includes a carbon material.

[0070] In some embodiments, the carbon material includes at least one of graphene, graphite, amorphous carbon, carbon nanotubes, and carbon molecular sieves.

[0071] In some embodiments, the ion storage layer further includes at least one of a conductive agent and a binder.

[0072] In some embodiments, the conductive agent includes at least one of conductive carbon black, conductive graphite, Ketjen black, acetylene black, carbon nanotubes, and carbon nanofibers.

[0073] In some embodiments, the binder includes at least one of polyvinylidene fluoride, sodium carboxymethyl cellulose, styrene-butadiene rubber, and polytetrafluoroethylene.

[0074] In some embodiments, the mass ratio of the negative electrode active material, the conductive agent, and the binder is 9:0.5:0.5 to 6:2:2.

[0075] In some embodiments, the atom source device further includes a heating component connected to one of the first electrode layer, the ion storage layer, the ion conduction layer, and the second electrode layer.

[0076] It should be noted that the structure of the "heating component" described in this application is not limited, as long as it can provide thermal energy to the atomic source device to enhance the kinetic energy of the alkali metal atoms reduced on the surface of the ion conduction layer, so that the alkali metal atoms can be desorbed from the ion conduction layer through the pores of the second electrode layer.

[0077] In some embodiments, the heating component is connected to the second electrode layer, and the heating component does not overlap with at least a portion of the holes in the second electrode layer.

[0078] It should be noted that when the heating component is connected to the second electrode layer, the setting position of the heating component needs to not overlap with at least part of the pores of the second electrode layer; that is, the heating component cannot completely cover the pores of the second electrode layer to ensure that the alkali metal atoms reduced on the upper surface of the ion conduction layer can still pass through the pores to desorb from the ion conduction layer and diffuse into the atomic gas chamber.

[0079] It should be noted that the method of desorbing the reduced alkali metal atoms on the upper surface of the ion conductive layer in the present application is not limited to setting up a heating component, but can also provide thermal energy to the entire atomic gas chamber, and utilize the heat conduction of the circulating alkali metal gas to promote the desorption of alkali metal atoms from the upper surface of the ion conductive layer.

[0080] In some embodiments, the atomic source device may further include a housing, which may tightly press and contact all components and package them together.

[0081] In some embodiments, the second electrode layer, the ion conduction layer, the ion storage layer, and the first electrode layer can be formed into independent components respectively, and then the first electrode layer and the second electrode layer are respectively connected to the control power supply, and all components are tightly pressed, contacted and packaged together through the outer shell to form an atomic source device.

[0082] In some embodiments, the second electrode layer, the ion storage layer, and the first electrode layer can all be integrated on the alkali metal ion solid electrolyte as the ion conduction layer, and then the first electrode layer and the second electrode layer are respectively connected to the control power supply to form an atomic source device. In this way, the integrated integration of the atomic source device can be achieved, and the integration process can be magnetron sputtering, evaporation, screen printing, cathode arc coating and other methods.

[0083] In this way, the atomic source device provided by the present application has a more efficient release function for alkali metal atoms and a faster release rate compared to traditional atomic sources; and compared with the use of temperature control method to control the density of alkali metal gas, the atomic source device provided by the present application can directly interact with alkali metal atoms, which can reduce the error influence caused by heat loss in the temperature control method, and can effectively improve the accuracy of controlling the density of alkali metal gas.

[0084] At the same time, the atomic source device provided by the present application is more suitable for complex external environments. For example, when the external environment is high temperature, the power consumption of the refrigeration process of the temperature control method is huge (usually several watts to tens of watts), while the atomic source device provided by the present application can reduce the density in the atomic gas chamber with only a small power consumption (<10 mW), which is conducive to reducing energy consumption. In addition, the atomic source device provided by the present application can be embedded in the atomic gas chamber. This technology can change the size of the electrically controlled atomic source according to the size of the gas chamber, which is very suitable for highly integrated / miniaturized atomic physics systems.

[0085] The second aspect of the present application provides an atomic gas chamber, comprising the atomic source device described in the first aspect of the present application.

[0086] In some embodiments, the atomic gas chamber contains alkali metal atomic gas.

[0087] The alkali metal atom gas in the atomic gas chamber can provide initial alkali metal atoms for the recovery / release cycle of alkali metal atoms, so that the alkali metal atoms are adsorbed on the upper surface of the second electrode layer of the atomic source device, thereby triggering the cycle of alkali metal atom recovery / cyclic release process.

[0088] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0089] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.

Claims

1. An atomic source device, characterized in that: The invention comprises a first electrode layer, an ion storage layer, an ion conduction layer and a second electrode layer which are stacked in sequence, wherein the first electrode layer and the second electrode layer are electrically connected via a control power supply, the ion conduction layer comprises an alkali metal ion conductor, the alkali metal ion conductor comprises at least one of an alkali metal ion solid electrolyte M-β / β"-Al2O3 and M-β-Al2O3, wherein M comprises at least one of Li, Na, K, Rb and Cs, and the second electrode layer comprises a pore penetrating the second electrode layer; The ion storage layer is used to store alkali metal ions, which contain negatively charged ions. The alkali metal ions that migrate to the ion storage layer can combine with the negatively charged ions to form alkali metal ion compounds, thereby realizing the storage of alkali metal ions. The ion storage layer contains negative electrode active materials.

2. The atomic source device according to claim 1, characterized in that: The alkali metal ion conductor includes an alkali metal ion solid electrolyte Rb-β-Al2O3.

3. The atomic source device according to claim 1 or 2, characterized in that: The ratio of the total area of ​​the orthographic projections of the pores on the surface of the second electrode layer to the area of ​​the surface of the second electrode layer body is 5% to 95%.

4. The atomic source device according to claim 1 or 2, characterized in that: The material of the first electrode layer and the material of the second electrode layer each independently include a conductive material.

5. The atomic source device according to claim 4, characterized in that: The conductive material includes at least one of a conductive metal material and a conductive carbon material.

6. The atomic source device according to claim 5, characterized in that: Satisfy at least one of the following conditions: (1) The conductive metal material includes at least one of gold, platinum, titanium, chromium, tungsten, silver, copper, aluminum, cobalt, nickel, molybdenum, chromium and tantalum; (2) The conductive carbon material includes at least one of graphene, graphite and amorphous carbon.

7. The atomic source device according to claim 1, characterized in that: The negative electrode active material includes a carbon material.

8. The atomic source device according to claim 7, characterized in that: The carbon material includes at least one of graphene, graphite, amorphous carbon, carbon nanotubes and carbon molecular sieves.

9. The atomic source device according to claim 1, characterized in that: The ion storage layer further includes at least one of a conductive agent and a binder.

10. The atomic source device according to claim 9, characterized in that: The conductive agent includes at least one of conductive carbon black, conductive graphite, Ketjen black, acetylene black, carbon nanotubes and carbon nanofibers.

11. The atomic source device according to claim 9, characterized in that: The binder includes at least one of polyvinylidene fluoride, sodium carboxymethyl cellulose, styrene-butadiene rubber and polytetrafluoroethylene.

12. The atomic source device according to claim 9, characterized in that: The mass ratio of the negative electrode active material, the conductive agent and the binder is 9:0.5:0.5 to 6:2:

2.

13. The atomic source device according to claim 1 or 2, characterized in that: A heating component is also included, and the heating component is connected to one of the first electrode layer, the ion storage layer, the ion conduction layer and the second electrode layer.

14. The atomic source device according to claim 13, characterized in that: The heating component is connected to the second electrode layer, and the heating component and at least a portion of the holes in the second electrode layer do not overlap.

15. An atomic gas chamber, characterized in that: An atomic source device comprising any one of claims 1-14.

16. The atomic gas chamber according to claim 15, characterized in that: The atomic gas chamber contains alkali metal atomic gas.

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