Silicon carbide single crystal growth device with adjustable gas filling mechanism

Abstract

The present invention relates to the field of semiconductor technology, and in particular, to a silicon carbide single crystal growth device with an adjustable gas filling mechanism, which includes a gas filling mechanism, the gas filling mechanism includes a pipeline assembly, a diversion chamber and an adjusting disk; the pipeline assembly is connected to the diversion chamber, and the pipeline assembly is used to transport process gas to the diversion chamber; the diversion chamber is arranged in a heating chamber of a heating furnace, and the diversion chamber is arranged above the crucible cover in the heating furnace at intervals; the bottom wall of the diversion chamber is provided with a first gas outlet, the adjusting disk is movably connected to the diversion chamber, and the adjusting disk is provided with a second gas outlet, and when the adjusting disk moves relative to the diversion chamber, the overlap between the first gas outlet and the second gas outlet can be adjusted, thereby adjusting the flow rate of the process gas transported from the bottom wall of the diversion chamber to the heating chamber. The silicon carbide single crystal growth device can not only regulate the temperature uniformity of the axial temperature gradient and the growth surface, improve the quality of the grown silicon carbide single crystal, but also improve the problems of increased cost and complicated structure of the growth device.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a silicon carbide single crystal growth device with an adjustable gas filling mechanism. Background Art

[0002] Silicon carbide is a commonly used semiconductor material, and one of its main preparation methods is the physical vapor transport method (PVT method). The basic principle of the physical vapor transport method includes: placing silicon carbide raw material at the bottom of a graphite crucible, bonding a silicon carbide seed crystal sheet to a graphite seed crystal seat provided on the crucible cover, and installing it on the top of the graphite crucible, and heating and sublimating the silicon carbide raw material at the bottom of the graphite crucible to grow a silicon carbide single crystal on the silicon carbide seed crystal.

[0003] When growing silicon carbide single crystals, it is mainly necessary to control the temperature and deliver process gases such as Ar to control the pressure. Among them, in the temperature control, on the one hand, it is necessary to ensure the temperature gradient of the graphite crucible in the axial direction, that is, the upper temperature is low and the lower temperature is high, and on the other hand, it is necessary to ensure the temperature uniformity of the growth surface of the silicon carbide single crystal.

[0004] In order to achieve temperature control, the silicon carbide single crystal growth device provided by the related technology usually adopts a heating device with more complex structure and control method to achieve a temperature gradient in the axial direction of the crucible, or an additional cooling mechanism is set for temperature control. This not only makes the structure of the silicon carbide single crystal growth device complicated, but the additional setting of a cooling mechanism for temperature control also requires an additional cooling medium supply system, which further increases the cost. Summary of the invention

[0005] The object of the present invention is to provide a silicon carbide single crystal growth device with an adjustable inflation mechanism, which can not only regulate the axial temperature gradient of the crucible and the temperature uniformity of the silicon carbide growth surface to control the growth quality of the silicon carbide single crystal; but also does not require an additional cooling medium supply system, nor does it require the use of a heating device with complex structure and control, which is conducive to improving the problems of increased cost and complex structure of the silicon carbide single crystal growth device.

[0006] The embodiment of the present invention is achieved as follows:

[0007] The present invention provides a silicon carbide single crystal growth device with an adjustable gas filling mechanism, comprising:

[0008] A heating furnace, the heating furnace having a heating chamber;

[0009] A crucible is installed in the heating chamber, and the crucible has a containing cavity, and the containing cavity is used to contain silicon carbide raw materials;

[0010] A crucible cover, which is detachably disposed above the crucible and covers the opening of the accommodating cavity, and is used to place a seed crystal; and

[0011] The gas filling mechanism includes a pipeline assembly, a diversion chamber and an adjusting disk; the pipeline assembly is connected to the diversion chamber, and the pipeline assembly is used to convey process gas to the diversion chamber; the diversion chamber is arranged in the heating chamber, and the diversion chamber is arranged above the crucible cover at intervals; wherein,

[0012] The bottom wall of the diversion chamber is provided with a first air outlet, the adjusting disk is movably connected to the diversion chamber, and the adjusting disk is provided with a second air outlet. When the adjusting disk moves relative to the diversion chamber, the overlap degree of the first air outlet and the second air outlet can be adjusted, thereby adjusting the flow rate of the process gas delivered from the bottom wall of the diversion chamber to the heating chamber.

[0013] In an optional embodiment, the regulating disk is rotatably connected to the diversion chamber.

[0014] In an optional embodiment, the adjusting disk includes an adjusting disk body and a protrusion connected to the adjusting disk body, the adjusting disk body is provided with a second air outlet; the diversion chamber has a chamber and a plug hole connected to the chamber, the first air outlet is connected to the chamber, the pipeline assembly is connected to the chamber, and the pipeline assembly is used to transport the process gas to the chamber;

[0015] The regulating disc body is rotatably arranged in the cavity, and the protrusion is plugged into the plug hole and extends out of the cavity.

[0016] In an optional embodiment, the bottom wall of the diversion bin is provided with a plurality of first air outlets, and the plurality of first air outlets are distributed in three concentric circles with the rotation axis of the adjusting disk as the center; wherein the first air outlets located in the innermost circle extend obliquely and can obliquely discharge air in a direction close to the rotation axis of the adjusting disk; the extension direction of the first air outlets located in the middle circle is parallel to the rotation axis of the adjusting disk to form an air outlet direction parallel to the rotation axis of the adjusting disk; the first air outlets located in the outermost circle extend obliquely and can obliquely discharge air in a direction away from the rotation axis of the adjusting disk; or,

[0017] The extension directions of the plurality of first air outlet holes are all parallel to the rotation axis of the adjusting disk, so as to form an air outlet direction parallel to the rotation axis of the adjusting disk.

[0018] In an optional embodiment, the adjusting disk is provided with a plurality of second air outlets, and the plurality of second air outlets are distributed in three concentric circles with the rotation axis of the adjusting disk as the center; wherein,

[0019] The second air outlet holes located in the innermost circle extend obliquely and discharge air obliquely in a direction close to the rotation axis of the adjusting disk; the second air outlet holes located in the middle circle extend in a direction parallel to the rotation axis of the adjusting disk to form an air outlet direction parallel to the rotation axis of the adjusting disk; the second air outlet holes located in the outermost circle extend obliquely and discharge air obliquely in a direction away from the rotation axis of the adjusting disk; or,

[0020] The extension directions of the plurality of second air outlet holes are all parallel to the rotation axis of the adjusting disk, so as to form an air outlet direction parallel to the rotation axis of the adjusting disk.

[0021] In an optional embodiment, the inflation mechanism also includes an inner sleeve, which is rotatably disposed in the diversion chamber, the side wall of the diversion chamber is provided with a third air outlet, and the inner sleeve is provided with a fourth air outlet. When the inner sleeve rotates relative to the diversion chamber, the overlap between the third air outlet and the fourth air outlet can be adjusted, thereby adjusting the flow rate of the process gas delivered from the side wall of the diversion chamber to the heating chamber.

[0022] In an optional embodiment, a slide groove is provided on the side wall of the diversion bin, and the inner sleeve is connected to a lever, which extends from the slide groove and can slide in the slide groove to drive the inner sleeve to rotate relative to the diversion bin.

[0023] In an optional embodiment, the third air outlet and the fourth air outlet both extend obliquely downward; or,

[0024] The extension directions of the third air outlet hole and the fourth air outlet hole are both perpendicular to the rotation axis of the inner sleeve.

[0025] In an optional embodiment, the regulating disk is rotatably connected to the diversion chamber, the regulating disk is embedded in the inner sleeve, and the outer peripheral wall of the regulating disk is in contact with the inner wall of the inner sleeve or has a gap therebetween.

[0026] In an optional embodiment, the pipeline assembly includes an inflation pipe and a connecting pipe, the inflation pipe is sleeved with the connecting pipe, and the connecting pipe is connected to the diversion bin, and the inflation pipe transports process gas to the diversion bin through the connecting pipe; at least one of the inflation pipe and the connecting pipe is connected to the top of the heating furnace.

[0027] The beneficial effects of the silicon carbide single crystal growth device with an adjustable inflation mechanism according to the embodiment of the present invention include: the silicon carbide single crystal growth device with an adjustable inflation mechanism provided by the embodiment of the present invention is equipped with an inflation mechanism, and the inflation mechanism includes a pipeline assembly, a diverter bin and an adjusting disk; the pipeline assembly is connected to the diverter bin, and the pipeline assembly is used to convey process gas to the diverter bin; the diverter bin is detachably arranged in the heating chamber, and the diverter bin is arranged above the crucible cover at intervals; wherein, the bottom wall of the diverter bin is provided with a first air outlet, the adjusting disk is movably connected to the diverter bin, and the adjusting disk is provided with a second air outlet, and when the adjusting disk moves relative to the diverter bin, the overlap degree of the first air outlet and the second air outlet can be adjusted, thereby adjusting the flow rate of the process gas from the bottom wall of the diverter bin to the heating chamber. In this way, on the one hand, the inflation mechanism can be used to transport process gases such as Ar to the heating chamber to control the pressure (pressure regulation); on the other hand, the overlap between the first gas outlet and the second gas outlet can be adjusted to control the flow rate of the process gas output, so that the temperature can be controlled simultaneously through the flow regulation of the process gas. That is, by allowing process gases with different flow rates to flow through the crucible cover, the uniformity of the temperature on the growth surface can be improved, and by allowing process gases with different flow rates to flow from the top to the bottom of the crucible, the axial temperature gradient of the crucible can be ensured to be "low on the top and high on the bottom", thereby ensuring the quality of the grown silicon carbide single crystal.

[0028] Moreover, the silicon carbide single crystal growth device with an adjustable inflation mechanism directly uses the inflation mechanism for conveying process gas to adjust the pressure to control the temperature. It does not require an additional supply system for providing a cooling medium, nor does it require the use of a heating device with complex structure and control. This is conducive to improving the problems of increased cost and complex structure of the silicon carbide single crystal growth device. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0030] Figure 1 is a cross-sectional view of a silicon carbide single crystal growth device with an adjustable gas charging mechanism according to an embodiment of the present invention;

[0031] Figure 2 is a cross-sectional view of an inflation mechanism according to an embodiment of the present invention;

[0032] Figure 3 is a cross-sectional view of an inflation mechanism in another embodiment of the present invention;

[0033] Figure 4 It is a schematic structural diagram of the diversion chamber, the inner sleeve and the lever in an embodiment of the present invention;

[0034] Figure 5 It is a cross-sectional view of an inflation mechanism in yet another embodiment of the present invention.

[0035] Icons: 010-Silicon carbide single crystal growth device with adjustable inflation mechanism; 100-heating furnace; 101-heating chamber; 110-furnace shell; 120-furnace cover; 200-crucible; 201-accommodating chamber; 210-crucible cover; 220-seed crystal; 300-inflating mechanism; 310-pipeline assembly; 311-connecting pipe; 312-inflating pipe; 320-diversion chamber; 321-first air outlet; 322-chamber; 323-plug hole; 324-third air outlet; 325-slide; 330-adjusting disk; 331-second air outlet; 332-adjusting disk body; 333-protrusion; 400-inner sleeve; 410-fourth air outlet; 420-dial lever. DETAILED DESCRIPTION

[0036] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0037] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0038] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0039] In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the invented product is usually placed when in use, which is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0040] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "disposed" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0041] Please refer to Figure 1 The present embodiment provides a silicon carbide single crystal growth device 010 with an adjustable gas filling mechanism, which includes a heating furnace 100, a crucible 200 and a crucible cover 210. The heating furnace 100 has a heating chamber 101, the crucible 200 is assembled in the heating chamber 101, the crucible 200 has a receiving chamber 201, and the receiving chamber 201 is used to contain silicon carbide raw materials; the crucible cover 210 is detachably arranged above the crucible 200 and covers the opening of the receiving chamber 201, and the crucible cover 210 is used to set a seed crystal 220. When growing a silicon carbide single crystal, the high temperature provided by the heating furnace 100 is used to sublimate the silicon carbide raw materials contained in the receiving chamber 201, and the atmosphere rising to the seed crystal 220 attached to the crucible cover 210 can generate a silicon carbide single crystal.

[0042] In order to control the composition, purity and growth rate of the crystal by regulating the pressure when growing the silicon carbide single crystal, the silicon carbide single crystal device also includes a gas filling mechanism 300 for providing process gases such as Ar.

[0043] For further information, please refer to Figure 1 and Figure 2 The charging mechanism 300 includes a pipeline assembly 310, a diverter bin 320 and an adjusting disk 330; the pipeline assembly 310 is connected to the diverter bin 320, and the pipeline assembly 310 is used to transport process gas to the diverter bin 320; the diverter bin 320 is arranged in the heating chamber 101, and the diverter bin 320 is arranged above the crucible cover 210 at intervals; wherein, the bottom wall of the diverter bin 320 is provided with a first gas outlet 321, the adjusting disk 330 is movably connected to the diverter bin 320, and the adjusting disk 330 is provided with a second gas outlet 331, when the adjusting disk 330 moves relative to the diverter bin 320, the overlap between the first gas outlet 321 and the second gas outlet 331 can be adjusted, thereby adjusting the flow rate of the process gas transported from the bottom wall of the diverter bin 320 to the heating chamber 101.

[0044] In this way, on the one hand, the inflation mechanism 300 can be used to transport process gases such as Ar to the heating chamber 101 to control the pressure (pressure regulation); on the other hand, the flow rate of the process gas output can be controlled by adjusting the overlap between the first gas outlet 321 and the second gas outlet 331, so that the temperature can be controlled simultaneously through the flow regulation of the process gas. That is, by allowing process gases with different flow rates to flow through the crucible cover 210, the uniformity of the temperature of the growth surface can be improved, and by allowing process gases with different flow rates to flow from the top to the bottom of the crucible 200, the axial temperature gradient of the crucible 200 can be ensured to be "low on the top and high on the bottom", thereby ensuring the quality of the grown silicon carbide single crystal.

[0045] Moreover, the silicon carbide single crystal growth device 010 with an adjustable inflation mechanism directly uses the inflation mechanism 300 for conveying process gas to adjust the pressure to control the temperature. It does not require an additional supply system for providing a cooling medium, nor does it require the use of a heating device with a more complex structure and control. This is conducive to improving the problems of increased cost and complex structure of the silicon carbide single crystal growth device 010 with an adjustable inflation mechanism.

[0046] It should be noted that the shunt chamber 320 is arranged above the crucible cover 210 and is spaced apart from the crucible cover 210. The shunt chamber 320 is not in contact with the crucible cover 210 and the crucible 200, so that the process gas can be introduced at a position relatively far away from the crucible 200 and the crucible cover 210 for adjustment, which is conducive to making the temperature of the upper part of the crucible 200 and the crucible cover 210 more uniform and controllable; the process gas is introduced from a position relatively far away from the crucible 200 and the crucible cover 210, on the one hand, so that the process gas can be obtained under the action of the heating furnace 100 after entering the shunt chamber 320. On the one hand, the process gas can be preheated to achieve a certain degree of heating, that is, to achieve preheating of the process gas. On the other hand, the process gas output from the diversion chamber 320 can be further heated under the action of the heating furnace 100, so as to avoid the process gas directly hitting the upper end of the crucible 200 or the crucible cover 210 without any heating, resulting in uneven temperature of the growth surface, and to avoid the unheated process gas from contacting the high-temperature crucible 200, resulting in a large temperature difference between cold and hot, which has an adverse effect on the structure of the crucible 200, that is, it can improve the problem of damage to the crucible 200, which is beneficial to extend the service life of the crucible 200.

[0047] Optionally, please continue to refer to Figure 1 and Figure 2 The pipeline assembly 310 includes an inflation pipe 312 and a connecting pipe 311. The inflation pipe 312 is sleeved with the connecting pipe 311, and the connecting pipe 311 is connected to the diversion chamber 320. The inflation pipe 312 transports process gas to the diversion chamber 320 through the connecting pipe 311; the inflation pipe 312 is connected to the furnace top of the heating furnace 100.

[0048] Of course, in other embodiments, the connecting pipe 311 may be connected to the furnace top of the heating furnace 100 ; or, both the inflation pipe 312 and the connecting pipe 311 may be connected to the furnace top of the heating furnace 100 .

[0049] Optionally, the heating furnace 100 includes a furnace shell 110 and a furnace cover 120, the furnace shell 110 is provided with a heating chamber 101, the furnace cover 120 is detachably connected to the furnace shell 110, and the furnace cover 120 is used to open or close the opening of the heating chamber 101; the connection method between the furnace cover 120 and the furnace shell 110 includes but is not limited to a snap connection and a threaded connection. The gas charging pipe 312 is connected to the furnace cover 120, and one end of the gas charging pipe 312 extends from a side of the furnace cover 120 away from the heating chamber 101, so as to facilitate the filling of the process gas into the gas charging pipe 312.

[0050] The way in which the inflation pipe 312 is connected to the furnace cover 120 is similar to the way in which the inflation mechanism 300 provided in the related technology is connected to the furnace cover 120. For example, the furnace cover 120 is provided with an assembly hole, and the inflation pipe 312 is threadedly connected to the hole wall of the assembly hole, or the inflation pipe 312 is interference fit with the assembly hole, etc., which is not specifically limited here.

[0051] Please continue to refer to Figure 1 and Figure 2 In this embodiment, the gas filling pipe 312 is sleeved on the outside of the connecting pipe 311, and the two are fixedly connected. One end of the connecting pipe 311 extends out of the gas filling pipe 312 and is connected to the diversion chamber 320. The part of the connecting pipe 311 extending out of the gas filling pipe 312 is located in the heating chamber 101. In this way, when the process gas is transported, the process gas entering the connecting pipe 311 from the gas filling pipe 312 can be preheated under the action of the heating furnace 100, further ensuring the stability of the temperature uniformity control of the growth surface and the stability of the axial temperature gradient control of the crucible 200 when the process gas is transported to the crucible 200 and the crucible cover 210.

[0052] Optionally, the inner wall of the inflation tube 312 is connected to a step portion with a protrusion 333, and the end of the connecting tube 311 away from the diversion chamber 320 is connected to the limiting protrusion 333. The inflation tube 312 is sleeved on the outside of the connecting tube 311, and the step portion supports the limiting protrusion 333, which can ensure that the inflation tube 312 is reliably sleeved on the outside of the connecting tube 311.

[0053] Of course, in other embodiments, the connection method between the inflation tube 312 and the connecting tube 311 may also be threaded connection, integral molding, etc., which is not specifically limited here.

[0054] The connection method between the connecting pipe 311 and the diversion chamber 320 includes but is not limited to threaded connection and bonding.

[0055] In order to ensure the operability of adjusting the overlap between the first air outlet 321 and the second air outlet 331 , in this embodiment, the adjustment disk 330 is rotatably connected to the diversion chamber 320 .

[0056] Of course, in other embodiments, the regulating disk 330 may also be slidably connected to the diversion chamber 320, which is not specifically limited here.

[0057] For further information, please refer to Figure 2 The adjusting disk 330 includes an adjusting disk body 332 and a protrusion 333 connected to the adjusting disk body 332, and the adjusting disk body 332 is provided with a second air outlet 331; the diversion chamber 320 has a chamber 322 and a plug hole 323 connected to the chamber 322, the first air outlet 321 is connected to the chamber 322, the pipeline assembly 310 is connected to the chamber 322, and the pipeline assembly 310 is used to transport process gas to the chamber 322; specifically, the connecting pipe 311 is connected to the chamber 322, and is used to transport process gas to the chamber 322; the adjusting disk body 332 is rotatably arranged in the chamber 322, and the protrusion 333 is plugged into the plug hole 323 and extends from the chamber 322. When growing silicon carbide single crystals using the silicon carbide single crystal growth device 010 with an adjustable inflation mechanism, the adjustment disk body 332 can be first rotated through the protrusion 333 to adjust the overlap between the first air outlet 321 and the second air outlet 331, thereby controlling the flow rate of the process gas introduced during the subsequent growth of the silicon carbide single crystal, thereby achieving corresponding temperature control, which is beneficial to improving the quality of the silicon carbide single crystal growth.

[0058] Optionally, the outer wall of the protrusion 333 fits with the hole wall of the plug hole 323 .

[0059] Of course, in other embodiments, the outer wall of the protrusion 333 may also be spaced apart from the wall of the plug hole 323; or a bearing may be provided between the protrusion 333 and the plug hole 323, which is not specifically limited here.

[0060] Optionally, the inner diameters of the first air outlet 321 and the second air outlet 331 are the same. When the first air outlet 321 and the second air outlet 331 completely overlap, they have a maximum air outlet flow rate; when the first air outlet 321 and the second air outlet 331 are completely misaligned, they have a minimum air outlet flow rate (the flow rate is 0); when the first air outlet 321 and the second air outlet 331 partially overlap, they have a relatively small air outlet flow rate.

[0061] Of course, in other embodiments, the apertures of the first air outlet 321 and the second air outlet 331 may be different, which is not specifically limited here.

[0062] Please refer to Figure 2In this embodiment, the bottom wall of the diversion chamber 320 is provided with a plurality of first gas outlet holes 321, and the plurality of first gas outlet holes 321 form three concentric circles with the rotation axis of the adjustment disk 330 as the center; the adjustment disk 330 is provided with a plurality of second gas outlet holes 331, and the plurality of second gas outlet holes 331 form three concentric circles with the rotation axis of the adjustment disk 330 as the center; wherein the extension direction of the plurality of first gas outlet holes 321 is parallel to the rotation axis of the adjustment disk 330, so as to form a gas outlet direction parallel to the rotation axis of the adjustment disk 330; the extension direction of the plurality of second gas outlet holes 331 is parallel to the rotation axis of the adjustment disk 330, so as to form a gas outlet direction parallel to the rotation axis of the adjustment disk 330. By providing the plurality of first gas outlet holes 321 and the plurality of second gas outlet holes 331, it is possible to ensure that the process gas is quickly dispersed into the heating chamber 101, which is conducive to rapid heating and uniform distribution of the gas, thereby ensuring uniform radial temperature and axial temperature gradient, thereby ensuring the growth quality of the silicon carbide single crystal.

[0063] Of course, please refer to Figure 3 In other embodiments, the first air outlet 321 located in the innermost circle extends obliquely and can discharge air obliquely in the direction close to the rotation axis of the adjusting disk 330; the extension direction of the first air outlet 321 located in the middle circle is parallel to the rotation axis of the adjusting disk 330 to form an air outlet direction parallel to the rotation axis of the adjusting disk 330; the first air outlet 321 located in the outermost circle extends obliquely and can discharge air obliquely in the direction away from the rotation axis of the adjusting disk 330; at the same time, the second air outlet 331 located in the innermost circle extends obliquely and discharges air obliquely in the direction close to the rotation axis of the adjusting disk 330; the extension direction of the second air outlet 331 located in the middle circle is parallel to the rotation axis of the adjusting disk 330 to form an air outlet direction parallel to the rotation axis of the adjusting disk 330; the second air outlet 331 located in the outermost circle extends obliquely and discharges air obliquely in the direction away from the rotation axis of the adjusting disk 330. The process gas outputted from the first gas outlet 321 and the second gas outlet 331 located in the outermost circle flows obliquely toward the inner wall of the heating furnace 100 to regulate the temperature of the outer edge (periphery) of the crucible 200, while the process gas outputted from the first gas outlet 321 and the second gas outlet 331 located in the innermost circle flows obliquely toward the axial direction of the heating furnace 100 to improve the problem that there is no gas hole at the protrusion 333 of the adjustment disk 330, resulting in no process gas flowing to the middle part, thereby ensuring the temperature control of the middle part of the crucible 200 and the crucible cover 210. In this way, it is beneficial to simultaneously regulate the temperature of the periphery and the center of the crucible 200, thereby improving the temperature uniformity of the crucible 200 in the radial direction.

[0064] Alternatively, in other embodiments, the plurality of first air outlet holes 321 may also form two, four, or other concentric circles with the rotation axis of the adjusting disk 330 as the center, and the plurality of second air outlet holes 331 may also form two, four, or other concentric circles with the rotation axis of the adjusting disk 330 as the center; or, the plurality of first air outlet holes 321 may also be distributed in a rectangular array, and the plurality of second air outlet holes 331 may also be distributed in a rectangular array, etc., which is not specifically limited here.

[0065] Please refer to Figure 1 and Figure 2 In this embodiment, the inflation mechanism 300 also includes an inner sleeve 400, which is rotatably arranged in the diverter bin 320, that is, the inner sleeve 400 is rotatably arranged in the chamber 322 of the diverter bin 320, and the side wall of the diverter bin 320 is provided with a third air outlet 324 connected to the chamber 322, and the inner sleeve 400 is provided with a fourth air outlet 410; wherein, the diverter bin 320 is provided with a plurality of third air outlet holes 324, and the plurality of third air outlet holes 324 are distributed in sequence around the circumference of the diverter bin 320, and the inner sleeve 400 is provided with a plurality of fourth air outlet holes 410, and the plurality of fourth air outlet holes 410 are distributed one by one with the plurality of third air outlet holes 324; when the inner sleeve 400 rotates relative to the diverter bin 320, the overlap between the third air outlet holes 324 and the fourth air outlet holes 410 can be adjusted, thereby adjusting the flow rate of the process gas from the side wall of the diverter bin 320 to the heating chamber 101.

[0066] With such an arrangement, process gas can also be output from the periphery of the diverter chamber 320, and the flow rate of process gas output from the periphery of the diverter chamber 320 can be adjusted, which can further ensure the reliability of temperature control, and then ensure the axial temperature gradient and radial temperature uniformity, which is beneficial to improving the growth quality of silicon carbide single crystals; wherein, by arranging a plurality of first gas outlets 321 at the bottom of the diverter chamber 320, correspondingly arranging a plurality of second gas outlets 331 on the adjustment disk 330, and arranging a plurality of third gas outlets 324 on the side wall of the diverter chamber 320, and correspondingly arranging a plurality of fourth gas outlets 410 on the inner sleeve 400, and at the same time, the diverter chamber 320 and the crucible cover 210 are spaced apart, so as to achieve a more uniform adjustment of the temperature of the upper part of the crucible 200 and above the crucible cover 210, so as to facilitate the upper part to obtain a lower temperature, thereby ensuring the axial temperature gradient, and improving the problem of having an obvious temperature gradient in the radial direction, that is, ensuring the temperature uniformity in the radial direction, thereby improving the crystallization quality.

[0067] Furthermore, the extension directions of the third gas outlet 324 and the fourth gas outlet 410 are perpendicular to the rotation axis of the inner sleeve 400. Such an arrangement can ensure that the process gas blown out from the fourth gas outlet 410 and the third gas outlet 324 can reliably flow to the periphery of the diversion chamber 320 to regulate the peripheral temperature of the crucible 200.

[0068] Of course, please refer to Figure 3 In other embodiments, the third gas outlet 324 and the fourth gas outlet 410 are both extended obliquely downward; in this way, the process gas blown out from the third gas outlet 324 and the fourth gas outlet 410 will be transported toward the inner wall of the heating furnace 100, and after the process gas reaches the inner wall of the heating furnace 100, it will turn back and be transported toward the outer wall of the crucible 200, so as to reliably control the temperature of the outer edge (outer wall) of the crucible 200 and ensure the temperature uniformity of the outer edge of the crucible 200, that is, to ensure the radial temperature uniformity.

[0069] Further, please refer to Figure 4 The side wall of the diversion chamber 320 is provided with a slide groove 325, and the inner sleeve 400 is connected with a lever 420, which extends from the slide groove 325 and can slide in the slide groove 325 to drive the inner sleeve 400 to rotate relative to the diversion chamber 320. The cooperation between the lever 420 and the slide groove 325 ensures the ease of operation of rotating the inner sleeve 400 to adjust the overlap between the third air outlet 324 and the fourth air outlet 410.

[0070] Optionally, the inner diameters of the third air outlet 324 and the fourth air outlet 410 are the same. When the third air outlet 324 and the fourth air outlet 410 completely overlap, they have a maximum air outlet flow rate; when the third air outlet 324 and the fourth air outlet 410 are completely misaligned, they have a minimum air outlet flow rate (the flow rate is 0); when the third air outlet 324 and the fourth air outlet 410 partially overlap, they have a relatively small air outlet flow rate.

[0071] Of course, in other embodiments, the diameters of the third air outlet hole 324 and the fourth air outlet hole 410 may be different, which is not specifically limited here.

[0072] In this embodiment, please refer to Figure 2 The adjusting disk 330 is embedded in the inner sleeve 400, and a gap is distributed between the outer peripheral wall of the adjusting disk 330 and the inner sleeve 400. Such a configuration can ensure that both the adjusting disk 330 and the inner sleeve 400 can smoothly rotate relative to the diversion chamber 320, so as to ensure the operability of adjusting the flow rate of the process gas output from the diversion chamber 320.

[0073] Of course, please refer to Figure 5 In other embodiments, the outer peripheral wall of the regulating plate 330 is in contact with the inner wall of the inner sleeve 400. When the inner sleeve 400 rotates relative to the diversion chamber 320, the regulating plate 330 can support and position the inner sleeve 400 to ensure the stability of the structure and assembly position of the inner sleeve 400 and the regulating plate, thereby ensuring the reliability of regulating the flow rate of the process gas delivered from the diversion chamber 320.

[0074] When the silicon carbide single crystal growth device 010 with an adjustable gas filling mechanism of this embodiment is used to grow silicon carbide single crystals, the crucible 200 is placed in the heating chamber 101 of the furnace shell 110, and the accommodating chamber 201 of the crucible 200 is filled with silicon carbide raw materials; the crucible cover 210 provided with a seed crystal 220 is set on the crucible 200; the adjusting disk 330 and the inner sleeve 400 are rotated according to the crystal composition and purity of the single crystal to be grown, so as to adjust the overlap between the first gas outlet 321 and the second gas outlet 331, and adjust the overlap between the third gas outlet 324 and the fourth gas outlet 410, so as to realize the flow control of the conveying process gas; the adjusted gas filling mechanism 300 and the furnace cover 120 are assembled to the furnace shell 110 together, and the crucible 200 can be heated, and the process gas can be conveyed by using the gas filling mechanism 300.

[0075] In summary, the silicon carbide single crystal growth device 010 with an adjustable inflation mechanism of the present invention can not only regulate the axial temperature gradient of the crucible 200 and the temperature uniformity of the silicon carbide growth surface to control the growth quality of the silicon carbide single crystal; but also does not require an additional supply system for providing a cooling medium, nor does it require the use of a heating device with a more complex structure and control, which is conducive to improving the problems of increased cost and complex structure of the silicon carbide single crystal growth device 010 with an adjustable inflation mechanism.

[0076] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A silicon carbide single crystal growth device with an adjustable gas filling mechanism, characterized in that: include: A heating furnace (100), wherein the heating furnace (100) has a heating chamber (101); A crucible (200), the crucible (200) being mounted in the heating chamber (101), the crucible (200) having a containing chamber (201), the containing chamber (201) being used to contain silicon carbide raw materials; a crucible cover (210), the crucible cover (210) being detachably disposed above the crucible (200) and covering an opening of the accommodating cavity (201), the crucible cover (210) being used to place a seed crystal (220); and, A gas charging mechanism (300), the gas charging mechanism (300) comprising a pipeline assembly (310), a flow distribution chamber (320) and an adjusting disk (330); the pipeline assembly (310) and the flow distribution chamber (320) are connected, and the pipeline assembly (310) is used to transport process gas to the flow distribution chamber (320); the flow distribution chamber (320) is arranged in the heating chamber (101), and the flow distribution chamber (320) is arranged above the crucible cover (210) at intervals; wherein, The pipeline assembly (310) comprises an air filling pipe (312) and a connecting pipe (311), the air filling pipe (312) being sleeved with the connecting pipe (311), and the connecting pipe (311) being connected to the diversion chamber (320), and the air filling pipe (312) conveys process gas to the diversion chamber (320) through the connecting pipe (311); the heating furnace (100) comprises a furnace shell (110) and a furnace cover (120), the furnace shell (110) being provided with the heating chamber (101), the furnace cover (120) being detachably connected to the furnace shell (110), and the furnace cover (120) being used to open or close an opening of the heating chamber (101); the air filling pipe (312) being connected to the furnace cover (120), and one end of the air filling pipe (312) extending from a side of the furnace cover (120) facing away from the heating chamber (101); The bottom wall of the diversion chamber (320) is provided with a first air outlet (321), the adjustment disk (330) is movably connected to the diversion chamber (320), and the adjustment disk (330) is provided with a second air outlet (331), and when the adjustment disk (330) moves relative to the diversion chamber (320), the overlap between the first air outlet (321) and the second air outlet (331) can be adjusted, thereby adjusting the flow rate of the process gas transported from the bottom wall of the diversion chamber (320) to the heating chamber (101); The regulating disk (330) is rotatably connected to the diversion chamber (320); The bottom wall of the diversion chamber (320) is provided with a plurality of the first air outlet holes (321), and the plurality of the first air outlet holes (321) are distributed in three concentric circles with the rotation axis of the adjustment disk (330) as the center; wherein: The first air outlet holes (321) located in the innermost circle extend obliquely and can discharge air in an oblique direction close to the rotation axis of the adjusting disk (330); the first air outlet holes (321) located in the middle circle extend in a direction parallel to the rotation axis of the adjusting disk (330) to form an air outlet direction parallel to the rotation axis of the adjusting disk (330); the first air outlet holes (321) located in the outermost circle extend obliquely and can discharge air in an oblique direction away from the rotation axis of the adjusting disk (330); The regulating disk (330) is provided with a plurality of the second air outlet holes (331), and the plurality of the second air outlet holes (331) are distributed in three concentric circles with the rotation axis of the regulating disk (330) as the center; wherein: The second air outlet holes (331) located in the innermost circle extend obliquely and discharge air obliquely in a direction close to the rotation axis of the adjusting disk (330); the second air outlet holes (331) located in the middle circle extend in a direction parallel to the rotation axis of the adjusting disk (330) to form an air outlet direction parallel to the rotation axis of the adjusting disk (330); the second air outlet holes (331) located in the outermost circle extend obliquely and discharge air obliquely in a direction away from the rotation axis of the adjusting disk (330); The inflation mechanism (300) further comprises an inner sleeve (400), the inner sleeve (400) being rotatably arranged in the diversion chamber (320), the side wall of the diversion chamber (320) being provided with a third gas outlet hole (324), and the inner sleeve (400) being provided with a fourth gas outlet hole (410), and when the inner sleeve (400) rotates relative to the diversion chamber (320), the overlap between the third gas outlet hole (324) and the fourth gas outlet hole (410) can be adjusted, thereby adjusting the flow rate of the process gas transported from the side wall of the diversion chamber (320) to the heating chamber (101); the third gas outlet hole (324) and the fourth gas outlet hole (410) both extend obliquely downward; The side wall of the diversion chamber (320) is provided with a slide groove (325), the inner sleeve (400) is connected to a lever (420), the lever (420) extends from the slide groove (325), and the lever (420) can slide in the slide groove (325) to drive the inner sleeve (400) to rotate relative to the diversion chamber (320); the adjustment disk (330) is rotatably connected to the diversion chamber (320), the adjustment disk (330) is embedded in the inner sleeve (400), and the outer peripheral wall of the adjustment disk (330) is in contact with the inner wall of the inner sleeve (400); The diversion chamber (320) is arranged above the crucible cover (210) and is spaced apart from the crucible cover (210).

2. The silicon carbide single crystal growth device with an adjustable gas filling mechanism according to claim 1, characterized in that: The regulating disk (330) comprises a regulating disk body (332) and a protrusion (333) connected to the regulating disk body (332), and the regulating disk body (332) is provided with the second gas outlet (331); the diversion chamber (320) comprises a chamber (322) and a plug hole (323) communicating with the chamber (322), the first gas outlet (321) is communicated with the chamber (322), the pipeline assembly (310) is communicated with the chamber (322), and the pipeline assembly (310) is used to transport process gas to the chamber (322); The adjusting disk body (332) is rotatably disposed in the chamber (322); the protrusion (333) is plugged into the plug hole (323) and extends out of the chamber (322).

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