Ionization device and coating equipment for nitrogen

Abstract

The present invention provides an ionization device and coating equipment for nitrogen, and relates to the technical field of nitride coating. The ionization device includes a mixing chamber for forming a mixed gas containing nitrogen and hydrogen, the volume content ratio of hydrogen and nitrogen in the mixed gas is any value in the range of 1%-20%, a reaction chamber is formed in a shell, the air inlet of the shell is used to input the mixed gas into the reaction chamber, the flow rate of the mixed gas is in the range of 15sccm-80sccm, a radio frequency coil is used to form an electromagnetic field in the reaction chamber, the electromagnetic field is used to ionize the mixed gas to form nitrogen ions, the current of the radio frequency coil is in the range of 150mA-250mA, the grid is used to form an accelerating electric field at the gas outlet, the voltage of the accelerating electric field is any value in the range of 400V-600V, the accelerating electric field is used to accelerate nitrogen ions to form a nitrogen ion jet, and the content of hydrogen in the mixed gas changes according to the performance parameters of the nitride. The ionization device of the present invention can improve the ionization efficiency of nitrogen, simplify the structure of the ionization device, and reduce costs.

Description

Technical Field

[0001] The present invention relates to the technical field of nitride coating, and in particular to an ionization device and coating equipment for nitrogen. Background Art

[0002] Nitrides are widely used as materials for coating metal tool surfaces due to their excellent chemical stability and high mechanical strength. Nitride films are usually prepared by sputtering to improve the wear resistance and corrosion resistance of the products to be plated. However, the preparation of nitride films by sputtering has the problems of complex equipment and high cost.

[0003] In the prior art, the use of vacuum evaporation equipment to make nitride film layers can greatly simplify the production equipment and process, while improving the hardness and density of nitride coatings, which helps optical coated parts withstand more stringent outdoor environment tests. However, since nitrides are difficult to withstand high-temperature heating by electron beams under vacuum conditions, nitrogen ions are more likely to escape from nitrogen ionization equipment, causing nitrogen to rapidly outgas and decompose at high temperatures, making it difficult to form a stable nitride material flow, and nitride coatings cannot be deposited on the surface of the product to be plated. Summary of the invention

[0004] An object of the first aspect of the present invention is to provide an ionization device for nitrogen, so as to solve the technical problems in the prior art that the ionization device for ionizing nitrogen is relatively high in cost or the nitride is easily gasified.

[0005] Another object of the first aspect of the present invention is to further improve the ionization efficiency of the ionization device.

[0006] The second aspect of the present invention aims to provide a coating device, comprising the above-mentioned ionization device.

[0007] According to the purpose of the first aspect of the present invention, the present invention provides an ionization device for nitrogen, comprising:

[0008] A mixing chamber, used to form a mixed gas containing nitrogen and hydrogen, wherein the volume content ratio of the hydrogen to the nitrogen in the mixed gas is any value in the range of 1%-20%;

[0009] A shell is located at the top of the mixing chamber, a reaction chamber is formed in the shell, and the shell further includes an air inlet and an air outlet, the air inlet is used to input the mixed gas into the reaction chamber, and the flow rate of the mixed gas is any value in the range of 15 sccm-80 sccm (standard cubic centimeters per minute);

[0010] A radio frequency coil is sleeved on the peripheral side of the shell, the radio frequency coil is used to form an electromagnetic field in the reaction chamber, the electromagnetic field is used to ionize the mixed gas to form nitrogen ions, the nitrogen ions are used to form nitrides, and the current of the radio frequency coil is any value in the range of 150mA-250mA;

[0011] A grid, located at the gas outlet, the grid is used to form an accelerating electric field at the gas outlet, the voltage of the accelerating electric field is any value in the range of 400V-600V, and the accelerating electric field is used to accelerate the nitrogen ions to form a nitrogen ion jet;

[0012] Wherein, the content of the hydrogen in the mixed gas varies according to the performance parameters of the nitride.

[0013] Optionally, the ionization device further comprises:

[0014] A spoiler ring is arranged in the air inlet, and the spoiler ring is provided with a first through hole for connecting the reaction cavity and the mixing chamber.

[0015] Optionally, a diameter of the first through hole is smaller than a diameter of the reaction chamber.

[0016] Optionally, the ionization device further comprises:

[0017] A cone structure is located on a side of the shell where the air inlet is provided. The cone structure is configured to protrude from the air inlet toward the first through hole of the spoiler ring, and the cone structure is provided with a second through hole and an air inlet opening that are connected. The second through hole is also connected to the air inlet, and the air inlet opening is also connected to the mixing chamber.

[0018] Optionally, the material of the cone structure is any one of metal Hf, Mo, and W, and the surface of the cone structure facing the spoiler ring includes a coating, and the material of the coating is any one or more mixtures of oxides of Fe, Mn, Cu, Ni, and Zn.

[0019] Optionally, the coating of the cone structure is made of FeO.

[0020] Optionally, the housing is arranged to be rotatable relative to the mixing chamber.

[0021] Optionally, the radio frequency coil is a hollow water-cooled electrode.

[0022] According to the purpose of the second aspect of the present invention, the present invention further provides a coating device for nitrides, comprising the ionization device described in any one of the above, and the coating device further comprises:

[0023] A gasification device is arranged at a distance from the ionization device, the gasification device is used to form a material jet, the gasification device includes an outlet port, and the outlet port is used to eject the material jet;

[0024] A rotating umbrella stand is arranged opposite to the gasification device and the ionization device, and is used to fix the product to be plated so that the material jet generated by the gasification device and the nitrogen ions are deposited together on the product to be plated to form a nitride film.

[0025] Optionally, the substance jet is titanium vapor.

[0026] The ionization device of the present invention is provided with a radio frequency coil on the peripheral side of a shell, so that when the radio frequency coil is energized, an electromagnetic field is formed in a reaction chamber for ionizing a mixed gas. The electromagnetic field ionizes hydrogen in the mixed gas to generate hydrogen ions and electrons. The electrons are accelerated in the electromagnetic field and collide with nitrogen molecules, thereby increasing the ionization rate of nitrogen ions, so that nitrogen is ionized to generate nitrogen ions under the dual effects of the electromagnetic field and the electrons. The nitrogen ions are extracted from the ionization device under the action of a gate voltage, thereby forming a nitrogen ion jet, thereby improving the ionization efficiency of the ionization device. At the same time, the structure of the ionization device for nitrogen is simplified, thereby reducing the cost.

[0027] Furthermore, the ionization device of the present invention also includes a cone structure, which is arranged in the air inlet, and the cone structure has a second through hole protruding toward the spoiler ring, so that the mixed gas flows through the cone structure before flowing into the spoiler ring through the air inlet, so that the high electric field strength generated by the tip effect of the cone structure induces the initial ionization of hydrogen molecules to generate hydrogen ions and electrons. The electrons further flow into the reaction chamber and collide with nitrogen molecules to improve the ionization efficiency of the nitrogen.

[0028] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention and implement it according to the contents of the specification, the following is a detailed description of the preferred embodiments of the present invention in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Hereinafter, some specific embodiments of the present invention will be described in detail in an exemplary and non-limiting manner with reference to the accompanying drawings. The same reference numerals in the accompanying drawings indicate the same or similar components or parts. It should be understood by those skilled in the art that these drawings are not necessarily drawn to scale. In the accompanying drawings:

[0030] Figure 1 is a schematic structural diagram of an ionization device according to one embodiment of the present invention;

[0031] Figure 2 is a schematic top view of an ionization device according to one embodiment of the present invention;

[0032] Figure 3 is a schematic cross-sectional view of an ionization device according to one embodiment of the present invention;

[0033] Figure 4 yes Figure 3 A schematic partial enlarged view of point A shown;

[0034] Figure 5 is a schematic structural diagram of a coating device according to an embodiment of the present invention.

[0035] Reference numerals:

[0036] 100-ionization device, 10-mixing chamber, 20-shell, 21-reaction chamber, 22-air outlet, 30-RF coil, 31-first terminal, 40-grid, 41-second terminal, 50-spoiler ring, 51-first through hole, 60-conical structure, 61-second through hole, 62-air inlet opening, 200-coating equipment, 210-gasification device, 211-outlet port, 220-rotating umbrella stand. DETAILED DESCRIPTION

[0037] The specific implementation of the present invention is further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0038] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. It is to be understood that the specific embodiments described herein are only used to explain the present application, rather than to limit the present application. It should also be noted that, for ease of description, only some structures related to the present application are shown in the accompanying drawings, rather than all structures. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0039] The terms "including" and "having" and any variations thereof in this application are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device comprising a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products or devices.

[0040] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0041] Figure 1 is a schematic structural diagram of an ionization device according to an embodiment of the present invention, Figure 2 is a schematic top view of an ionization device according to an embodiment of the present invention, Figure 3 is a schematic cross-sectional view of an ionization device according to one embodiment of the present invention, Figure 4 yes Figure 3 A schematic partial enlarged view of point A is shown.

[0042] like Figure 3 As shown, the present invention provides an ionization device 100 for nitrogen. The ionization device 100 includes a mixing chamber 10, a shell 20, a radio frequency coil 30 and a grid 40. The mixing chamber 10 is used to form a mixed gas containing nitrogen and hydrogen. The volume content ratio of hydrogen and nitrogen in the mixed gas is any value in the range of 1%-20%. The shell 20 is located at the top of the mixing chamber 10. A reaction chamber 21 is formed in the shell 20. The shell 20 also includes an air inlet and an air outlet 22. The air inlet is used to input the mixed gas into the reaction chamber 21. The flow rate of the mixed gas is any value in the range of 15sccm-80sccm. The radio frequency coil 30 is sleeved on the shell. The RF coil 30 is arranged on the peripheral side of the body 20, and is used to form an electromagnetic field in the reaction chamber 21, and the electromagnetic field is used to ionize the mixed gas to form nitrogen ions, and the nitrogen ions are used to form nitrides. The current of the RF coil 30 is any value in the range of 150mA-250mA. The gate 40 is located at the gas outlet 22, and the gate 40 is used to form an accelerating electric field at the gas outlet 22, and the voltage of the accelerating electric field is any value in the range of 400V-600V. The accelerating electric field is used to accelerate the nitrogen ions to form a nitrogen ion jet, wherein the volume content of hydrogen in the mixed gas changes according to the performance parameters of the nitride. Here, the ionization device 100 also includes a first terminal and a second terminal, the first terminal is configured to power the RF coil 30, and the second terminal is used to power the gate 40, the shell 20 is made of quartz material, and the gate 40 is made of an ion source port made of alumina ceramic and two porous molybdenum sheets.

[0043] In this embodiment, a radio frequency coil 30 is arranged on the peripheral side of the shell 20, so that an electromagnetic field for ionizing the mixed gas is formed in the reaction chamber 21 when the radio frequency coil 30 is powered on. The electromagnetic field resonates with the hydrogen in the mixed gas to produce hydrogen ions and electrons. The electrons are accelerated in the electromagnetic field and collide with nitrogen molecules to increase the ionization rate of nitrogen ions, so that nitrogen is ionized under the dual action of the electromagnetic field and the electrons to produce nitrogen ions. The nitrogen ions are extracted from the ionization device 100 under the action of the voltage of the gate 40, thereby forming a nitrogen ion jet, improving the ionization efficiency of the ionization device 100, simplifying the structure of the nitrogen ionization device 100, and reducing the cost. Here, the nitrogen ion jet is used to form a titanium nitride coating or a silicon nitride coating with titanium vapor or silicon vapor.

[0044] In this embodiment, the ionization device 100 adds hydrogen to the nitrogen to increase the ionization rate of nitrogen ions, and forms an accelerating electric field at the gas outlet 22 by utilizing the gate 40. The accelerating electric field is used to accelerate the nitrogen ions in the reaction chamber 21 to form a nitrogen ion jet, and the nitrogen ion jet is ejected from the gas outlet 22 in the form of a nitrogen ion jet, so that the nitride film formed by the nitrogen ion jet and the jet of other substances has higher hardness and density, and has water resistance and scratch resistance.

[0045] In this embodiment, the ionized nitrogen ion jet has high energy and reactivity, and can supplement the specified ions to the film layer of the product to be plated deposited on the surface of the part, so that the film layer composition of the product to be plated can maintain an ideal ratio. At the same time, the mixed gas contains reducing hydrogen ion components, which can reduce the pollution caused by oxygen molecules in the environment.

[0046] In this embodiment, the volume content ratio of hydrogen and nitrogen in the mixed gas is any value in the range of 1%-20%, that is, the volume content ratio of hydrogen and nitrogen in the mixed gas can be 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 15% or 20%, or any value in the range of 1%-20%. That is to say, in the ionization device 100 in this embodiment, when the volume content ratio of hydrogen and nitrogen is any value in the range of 1%-20%, the number of electrons and ions generated after hydrogen ionization increases, and the probability of collision with nitrogen molecules increases, thereby accelerating the ionization of nitrogen and improving the ionization rate of nitrogen. At the same time, when the volume content of hydrogen is in the above range, the electrons and ions generated by hydrogen ionization help to form a stable discharge channel, reduce fluctuations and instability during the discharge process, and thus enhance the stability of the discharge. In a preferred embodiment, the volume content ratio of hydrogen and nitrogen in the mixed gas is any value in the range of 1%-10%, that is, the volume content ratio of hydrogen and nitrogen in the mixed gas can be 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9% or 10%, or any value in the range of 1%-10%.

[0047] In this embodiment, when the volume content ratio of hydrogen and nitrogen in the mixed gas is less than 1%, the number of electrons and hydrogen ions generated after hydrogen ionization is limited, that is, the probability of collision between electrons and nitrogen molecules is low, and the ionization efficiency of nitrogen ions cannot be effectively improved. When the volume content ratio of hydrogen and nitrogen in the mixed gas is greater than 20%, the continuous increase in the volume content of hydrogen will bring higher ionization efficiency, but it will also lead to instability in the discharge process, that is, too high a hydrogen content makes the discharge area too active, generates too much heat and energy fluctuations, and affects the stability and safety of the discharge. At the same time, since hydrogen has the characteristics of being flammable and explosive, its excessive content will increase the safety risk of the ionization process of the ionization device 100 and reduce the safety of the use of the ionization device 100.

[0048] In this embodiment, the nitrogen ions formed by the ionization device 100 are used to prepare a nitride coating with excellent performance. The performance parameters of the nitride coating include filling rate, refractive index, hardness and friction coefficient. Among them, in an ideal nitride coating, the nitride coating satisfies the following preset conditions at the same time: the filling rate of the silicon nitride coating is 85-99%, and the refractive index is 1.98-2.02; the filling rate of the titanium nitride coating is 85-99%, the hardness is 20 GPa-25GPa, and the friction coefficient is less than 0.4. The volume content of hydrogen in the mixed gas changes according to the performance parameters of the nitride, that is, the volume content of hydrogen in the mixed gas gradually decreases after the above preset conditions are met, and gradually increases when the above preset conditions are not met until the performance of the nitride coating meets the above preset conditions, so that the surface of the product to be plated always forms a nitride coating with high strength and high density.

[0049] In this embodiment, the flow rate of the mixed gas is any value in the range of 15sccm-80sccm, that is, the flow rate of the mixed gas can be 15sccm, 20sccm, 25sccm, 30sccm, 35sccm, 40sccm, 44sccm, 48sccm, 50sccm, 54sccm, 58sccm, 60sccm, 65sccm, 70sccm or 80sccm, or any value in the range of 15sccm-80sccm. That is to say, when the flow rate of the mixed gas in this embodiment is controlled at any value in the range of 15sccm-80sccm, the content of hydrogen and nitrogen in the reaction chamber 21 can be adapted to the ionization efficiency of the electromagnetic field generated by the radio frequency coil 30 so that nitrogen and hydrogen can be fully ionized under the action of the electromagnetic field, that is, the appropriate flow rate of the mixed gas can ensure that the hydrogen and nitrogen in the reaction chamber 21 are completely ionized, thereby improving the efficiency and yield of the ionization reaction. At the same time, when the flow rate of the mixed gas is within the above range, it is helpful to control the temperature of the reaction chamber 21, avoid local overheating or overcooling of the reaction chamber 21, and thus keep the ionization reaction within the optimal temperature range. In addition, controlling the flow rate of the mixed gas can prevent hydrogen from accumulating in the reaction chamber 21, reducing the risk of safety accidents such as explosions. In a preferred embodiment, the flow rate of the mixed gas is any value between 40sccm and 60sccm, that is, the flow rate of the mixed gas can be 40sccm, 42sccm, 44sccm, 46sccm, 48sccm, 50sccm, 54sccm, 58sccm or 60sccm, or any value between 40cc and 60sccm.

[0050] In this embodiment, when the flow rate of the mixed gas is lower than 15 sccm, the hydrogen and nitrogen in the mixed gas will stay in the reaction chamber 21 for too long, so that the electromagnetic field generated by the RF coil 30 will repeatedly ionize the hydrogen ions or nitrogen ions, that is, the content of hydrogen and nitrogen in the reaction chamber 21 cannot meet the ionization of the electromagnetic field generated by the RF coil 30, thereby reducing the reaction rate of the ionization reaction and wasting energy. At the same time, the low flow rate of the mixed gas will cause part of the gas to be retained in a part of the reaction chamber 21, resulting in local overheating or overcooling of the reaction chamber 21. When the flow rate of the mixed gas is too high, the residence time of nitrogen and hydrogen in the reaction chamber 21 is too short, resulting in the electromagnetic field generated by the RF coil 30 being unable to fully ionize the nitrogen and hydrogen flowing through the reaction chamber 21, resulting in the ionization products of the ionization device 100 containing nitrogen molecules or hydrogen molecules, thereby reducing the quality of the nitride coating. Meanwhile, an excessively high flow rate of the mixed gas may cause impacts on the ionization device 100 and the product to be plated, increase the wear and failure rate of the ionization device 100, and even increase the defective rate of the plated product.

[0051] In this embodiment, the current of the RF coil 30 is any value in the range of 150mA-250mA, that is, the current of the RF coil 30 can be 150mA, 155mA, 160mA, 165mA, 170mA, 180mA, 190mA, 200mA, 230mA or 250mA, or any value in the range of 150mA-250mA. That is to say, in the ionization device 100 of this embodiment, when the current of the RF coil 30 is any value in the range of 150mA-250mA, the increase of the current will enhance the electromagnetic field intensity generated by the RF coil 30, and the enhanced electromagnetic field can more effectively promote the ionization of gas molecules, that is, the electromagnetic field generated by the current of the RF coil 30 in this embodiment is sufficient to ionize hydrogen and nitrogen, thereby improving the ionization efficiency of the ionization device 100 and increasing the number of ions generated per unit volume, that is, increasing the ion density. Meanwhile, the current of the RF coil 30 within the above range can also ensure the stability of the ionization device 100. In a preferred embodiment, the current of the RF coil 30 is any value in the range of 180 mA-200 mA, that is, the current of the RF coil 30 can be 180 mA, 182 mA, 184 mA, 186 mA, 188 mA, 190 mA, 192 mA, 194 mA, 196 mA, 198 mA or 200 mA, or any value in the range of 180 mA-200 mA.

[0052] In this embodiment, when the current of the RF coil 30 is less than 150 mA, the strength of the electromagnetic field formed in the reaction chamber 21 is relatively weak, and the hydrogen and nitrogen in the mixed gas cannot be effectively ionized, which reduces the ionization efficiency of the ionization device 100. At the same time, the reduction in ionization efficiency will result in less nitrogen ion jets flowing out, which is insufficient to form a nitride coating with high strength and high density, thereby increasing the defective rate of the nitride coating. When the current of the RF coil 30 is greater than 250 mA, a strong electromagnetic field will be generated. Under the action of the strong electromagnetic field, the temperature in the reaction chamber 21 is too high. If discharge or local overheating occurs in the reaction chamber 21, hydrogen may explode, or nitrogen may form harmful nitrides.

[0053] In this embodiment, the voltage of the accelerating electric field formed by the gate 40 is any value in the range of 400V-600V, that is, the voltage of the gate 40 can be 400V, 420V, 440V, 460V, 480V, 500V, 520V, 540V, 560V, 580V or 600V, or any value in the range of 400V-600V. That is to say, when the voltage of the accelerating electric field formed by the gate 40 of the ionization device 100 in this embodiment is any value in the range of 400V-600V, the accelerating electric field has a high accelerating effect on the nitrogen ions at the gas outlet 22, and is used to draw out the ionized nitrogen ions, that is, under the action of the accelerating electric field, the nitrogen ions are accelerated by the electric field and extracted out of the gas outlet 22 of the ionization device 100, and are coated on the surface of the product to be plated in the form of a nitrogen ion jet, thereby forming a dense nitride coating.

[0054] like Figure 3 As shown, in a further embodiment, the ionization device 100 further includes a spoiler ring 50, which is disposed in the air inlet, and the spoiler ring 50 is provided with a first through hole 51 for connecting the reaction chamber 21 and the mixing chamber 10. In this embodiment, the spoiler ring 50 is disposed at the bottom of the reaction chamber 21 and is connected to the air inlet, so that the mixed gas in the mixing chamber 10 enters the first through hole 51 of the spoiler ring 50 through the air inlet, so as to further mix the hydrogen and nitrogen in the mixed gas and improve the mixing uniformity of the mixed gas. Here, the diameter of the spoiler ring 50 is smaller than the diameter of the air inlet.

[0055] like Figure 4 As shown, in a further embodiment, the diameter of the first through hole 51 is smaller than the diameter of the reaction chamber 21. In this embodiment, the first through hole 51 is located at the bottom of the shell 20 and the two ends of the first through hole 51 are respectively connected to the reaction chamber 21 and the air inlet. The diameter of the first through hole 51 is smaller than the diameter of the reaction chamber 21, so that when the mixed gas flows into the reaction chamber 21 from the first through hole 51, the flow rate of the mixed gas slows down and the diffusion area increases due to the increase in the pore diameter through which the mixed gas flows, which helps the gas to diffuse and mix more fully in the large pores, so that different gas components can be distributed more evenly. At the same time, after the mixed gas flows into the reaction chamber 21 with a larger diameter through the first through hole 51, the diffusion and mixing process in the reaction chamber 21 helps the contact and collision between hydrogen and nitrogen, thereby improving the ionization efficiency.

[0056] like Figure 4As shown, in this embodiment, the first through hole 51 is arranged at the bottom of the shell 20 and the two ends of the first through hole 51 are respectively connected to the reaction chamber 21 and the air inlet, the diameter of the first through hole 51 is smaller than the diameter of the air inlet and the diameter of the first through hole 51 is smaller than the diameter of the reaction chamber 21, so that in the process of the mixed gas flowing from the mixing chamber 10 into the reaction chamber 21, it first enters the spoiler ring 50 with a smaller diameter through the air inlet to further mix the mixed gas, and then flows into the reaction chamber 21 from the first through hole 51 of the spoiler ring 50, so that the diffusion and mixing of the mixed gas are more sufficient, thereby improving the uniformity of the mixed gas and the ionization efficiency of nitrogen and hydrogen.

[0057] In a further embodiment, the ionization device 100 further includes a cone structure 60, which is located at a side of the housing 20 where the air inlet is provided, and the cone structure 60 is arranged to protrude from the air inlet toward the first through hole 51 of the spoiler ring 50, and the cone structure 60 is provided with a second through hole 61 and an air inlet opening 62 which are connected, the second through hole 61 is also connected to the air inlet, and the air inlet opening 62 is also connected to the mixing chamber 10. In this embodiment, the cone structure 60 is arranged at a side of the housing 20 where the air inlet is provided, and the cone structure 60 has a second through hole 61 which protrudes toward the spoiler ring 50, so that the mixed gas flows through the air inlet opening 62 and the second through hole 61 into the spoiler ring 50, so that the high electric field strength generated by the tip effect of the cone structure 60 triggers the initial ionization of hydrogen molecules, generates hydrogen ions and electrons, and the electrons further flow into the reaction chamber 21 and collide with nitrogen molecules to improve the ionization efficiency of nitrogen. Here, since the cone structure 60 is configured to protrude from the bottom toward the spoiler ring 50 , the cone structure 60 itself has a spoiler function and can further mix the mixed gas flowing through the cone structure 60 .

[0058] In a further embodiment, the material of the cone structure 60 is any one of the metals Hf, Mo, and W, and the surface of the cone structure 60 on one side facing the spoiler ring 50 includes a coating, and the material of the coating is a mixture of any one or more of the oxides of Fe, Mn, Cu, Ni, and Zn. In this embodiment, the oxides of Fe, Mn, Cu, Ni, and Zn have a certain catalytic effect. When the material of the cone structure 60 is set to include the oxide of any of the above elements, the cone structure 60 itself has a catalytic effect, which can allow the nitrogen and hydrogen in the mixed gas to react in advance and generate part of the gas that can be used for ionization, so that the RF coil 30 can activate the mixed gas and form a continuous and stable plasma. Here, the gas that can be used for ionization generated by the catalytic action of the cone structure 60 is ammonia. Since the ionization difficulty of ammonia is relatively low, the ammonia generated by the cone structure 60 is first ionized to generate ammonium ions, so as to activate hydrogen molecules and nitrogen molecules in the reaction chamber 21, thereby improving the ionization efficiency of the ionization device 100.

[0059] In this embodiment, when the material of the coating of the pyramidal structure 60 is any one of the oxides of Fe, Mn, Cu, Ni, and Zn, the oxides of the above elements can promote nitrogen molecules to accept electrons, reduce the difficulty of N≡N breaking, and promote the ionization of nitrogen.

[0060] In a further embodiment, the coating of the cone structure 60 is made of FeO. In this embodiment, the coating of FeO has certain catalytic properties. The coating disposed on the surface of the cone structure 60 can catalyze a small amount of hydrogen and nitrogen flowing through the cone structure 60 to react and generate ammonia. The ammonia is ionized to form ammonium ions under the action of the high electric field generated by the tip effect of the cone structure 60. The formation of ammonium ions can promote the ionization of hydrogen and nitrogen, thereby improving the ionization efficiency of the ionization device 100. In addition, the cone structure 60 of FeO has corrosion resistance and can resist the corrosive ammonia generated during the ionization of hydrogen and nitrogen, thereby extending the service life of the cone structure 60.

[0061] In this embodiment, the RF coil 30 forms an electromagnetic field with relatively high energy in the reaction chamber 21, so that the temperature in the reaction chamber 21 increases, and FeO can maintain relatively stable properties under the action of high temperature and electric field, and is not prone to decomposition or phase change, thereby ensuring the stable operation of the cone structure 60 in the ionization device 100 in high temperature and high frequency electric field.

[0062] In a further embodiment, the shell 20 is configured to rotate relative to the mixing chamber 10. In this embodiment, the shell 20 is configured to rotate relative to the mixing chamber 10, that is, the gas outlet 22 located at the top of the shell 20 can rotate relative to the mixing chamber 10, so that the nitrogen ion jet flowing out of the gas outlet 22 can change its deposition position as the shell 20 rotates, so that the ionization device 100 can perform nitride deposition on the product to be plated at multiple angles, thereby achieving the angle flexibility of the ionization device 100 for coating. Here, after the nitrogen ion jet flows out from the gas outlet 22 and before it is sprayed onto the surface of the product to be plated, the nitrogen ion jet first forms a conical nitrogen ion jet and is deposited on the surface of the product to be plated to form a nitride coating.

[0063] In a further embodiment, the RF coil 30 is a hollow water-cooled electrode. In this embodiment, the RF coil 30 can be used as a discharge electrode and a cooling device at the same time, that is, the RF coil 30 as a discharge electrode can form an electromagnetic field in the reaction chamber 21 to ionize the hydrogen and nitrogen in the mixed gas, and at the same time, condensed water can be passed into the hollow structure inside the RF coil 30 to cool the reaction chamber 21 inside the shell 20, so as to avoid the temperature in the reaction chamber 21 being too high and causing damage to the ionization device 100.

[0064] Figure 5is a schematic structural diagram of a coating device according to an embodiment of the present invention.

[0065] like Figure 5 As shown, the present invention also provides a coating device 200, comprising any one of the above-mentioned ionization devices 100. The coating device 200 also includes a vaporization device 210 and a rotating umbrella stand 220. The vaporization device 210 is spaced apart from the ionization device 100. The vaporization device 210 is used to form a material jet. The vaporization device 210 includes an outlet port 211, and the outlet port 211 is used to eject the material jet. The rotating umbrella stand 220 is arranged opposite to the vaporization device 210 and the ionization device 100. The rotating umbrella stand 220 is used to fix the product to be plated, so that the material jet generated by the vaporization device 210 and the nitrogen ions are deposited together on the product to be plated to form a nitride film. Here, the vaporization device 210 is an electron gun, and the outlet port 211 of the vaporization device 210 and the gas outlet 22 of the ionization device 100 are arranged opposite to the rotating umbrella stand 220.

[0066] In this embodiment, the gasification device 210 is used to form a material jet, and the ionization device 100 is used to form a nitrogen ion jet, and the material jet and the nitrogen ion jet intersect on the surface of the product to be plated, so as to form a dense nitride film on the surface of the product to be plated. In other words, the outlet port 211 of the gasification device 210 forms a material jet with a conical structure, and the outlet port 22 of the ionization device 100 forms a nitrogen ion jet with a conical structure. The conical material jet and the nitrogen ion jet can be evenly mixed before being deposited on the surface of the product to be plated, so that the material jet and the nitrogen ion jet form a uniform nitride coating on the surface of the product to be plated.

[0067] In this embodiment, the deposition rate of the material jet is any value in the range of 5 Å / s-10 Å / s, and the deposition rate of the nitride jet formed by the material jet and the nitrogen ion jet is any value in the range of 5 Å / s-20 Å / s, that is, the deposition rate of the material jet can be 5 Å / s, 6 Å / s, 7 Å / s, 8 Å / s, 9 Å / s or 5 Å / s, or any value in the range of 5 Å / s-10 Å / s, and the deposition rate of the nitride jet can be 5 Å / s, 7 Å / s, 9 Å / s, 11 Å / s, 13 Å / s, 15 Å / s, 17 Å / s or 20 Å / s, or any value in the range of 5 Å / s-20 Å / s. That is to say, when the deposition rate of the material jet is any value between 5 Å / s and 10 Å / s, and the deposition rate of the nitride jet is any value between 5 Å / s and 20 Å / s, the nitride jet is deposited on the surface of the product to be plated to form a uniformly mixed and dense nitride coating, thereby avoiding the situation where the deposition rate of the material jet does not match the deposition rate of the nitride jet, resulting in uneven or low-density nitride coating.

[0068] In this embodiment, the vacuum degree of the coating device 200 is in the range of 1.0×10 -2 Pa-5.0×10 -2 Pa, that is, the vacuum degree of the coating device 200 can be 1.0×10 -2 Pa, 2.0×10 -2 Pa, 2.4×10 -2 Pa, 2.6×10 -2 Pa, 3.0×10 -2 Pa, 4.0×10 -2 Pa or 5.0×10 -2 Pa, or 1.0×10 -2 Pa-5.0×10 -2 Pa. That is to say, when the vacuum degree of the coating equipment 200 is in the above range, it can reduce the interference of other gas molecules on the coating process and improve the purity and uniformity of the nitride coating. In a preferred embodiment, the vacuum degree of the coating equipment 200 is in the range of 2.0×10 -2 Pa-3.0×10 -2 Pa, that is, the vacuum degree of the coating device 200 can be 2.0×10 -2 Pa, 2.2×10 -2 Pa, 2.4×10 -2 Pa, 2.6×10 -2 Pa, 2.8×10 -2 Pa or 3.0×10 -2 Pa, or 2.0×10 -2 Pa-3.0×10 -2 Any value in Pa.

[0069] In a further embodiment, the material jet is titanium vapor. In this embodiment, the material jet is titanium vapor, that is, the titanium vapor reacts with the nitrogen ion jet formed by the ionization device 100 to generate titanium nitride and deposits on the surface of the product to be plated to form a titanium nitride coating. In other embodiments, the material jet can also be silicon vapor, that is, silicon vapor and the nitrogen ion jet form a silicon nitride coating.

[0070] The present application will be further described in detail below with reference to specific embodiments.

[0071] In some embodiments, the vacuum degree of the coating device 200 is in the range of 1.0×10 -2 Pa-5.0×10 -2Pa, wherein the volume content ratio of hydrogen and nitrogen in the mixed gas introduced into the ionization device 100 is any value in the range of 1%-20%, the flow rate of the mixed gas is any value in the range of 15sccm-80sccm, the current of the radio frequency coil 30 is any value in the range of 150mA-250mA, and the voltage of the accelerating electric field of the gate 40 is any value in the range of 400V-600V, so as to form a nitrogen ion jet at the gas outlet 22, and the nitrogen ion jet and the material jet formed by the electron gun with a deposition rate in the range of 5Å / s-10Å / s jointly form a nitride coating with a deposition rate in the range of 5Å / s-20Å / s on the surface of the product to be plated.

[0072] Embodiment 1

[0073] This embodiment adopts Figure 5 The electron beam device 210 of the structural form in the electron beam device 210 heats the metal titanium in the crucible to form vapor and flies from the outlet port 211 to the rotating umbrella frame 220 in the form of a jet. Figure 3 The ionization device 100 of the structural form in the embodiment ionizes the gas under the aforementioned process conditions and forms a nitrogen ion jet which is simultaneously ejected toward the rotating umbrella frame 220 and deposited together with the titanium vapor generated by the outlet port 211 on the product to be plated of the rotating umbrella frame 220. The process conditions of this embodiment are as follows: the vacuum degree in the coating device 200 is 2.5x10 -2 Pa, the volume content ratio of hydrogen and nitrogen in the mixed gas introduced into the ionization device 100 is 5%, the flow rate of the mixed gas is 50 sccm, the current of the RF coil 30 is 200 mA, and the voltage of the accelerating electric field in the gate 40 is 500 V, so as to form a stable nitrogen ion jet at the gas outlet 22, and the nitrogen ion jet and the titanium vapor with a deposition rate of 7 Å / s jointly form a titanium nitride coating on the surface of the product to be plated.

[0074] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0075] The above embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for those of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A nitrogen ionization device, characterized in that include: A mixing chamber, configured to form a mixed gas containing nitrogen and hydrogen, wherein the volume ratio of the hydrogen to the nitrogen in the mixed gas is in a range of 1% to 20%; a housing located at the top of the mixing chamber, wherein a reaction chamber is formed in the housing, and further comprising an air inlet and an air outlet, wherein the air inlet is used to input the mixed gas into the reaction chamber, and wherein the flow rate of the mixed gas is any value in the range of 15 sccm-80 sccm; a radio frequency coil, sleeved around the circumference of the housing, the radio frequency coil being used to generate an electromagnetic field within the reaction chamber, the electromagnetic field being used to ionize the mixed gas to form nitrogen ions, the nitrogen ions being used to form nitrides, the current of the radio frequency coil being any value in the range of 150 mA to 250 mA; a grid located at the gas outlet, the grid being used to form an accelerating electric field at the gas outlet, wherein the voltage of the accelerating electric field is any value in the range of 400V-600V, and the accelerating electric field is used to accelerate the nitrogen ions to form a nitrogen ion jet; Wherein, the content of the hydrogen in the mixed gas varies according to the performance parameters of the nitride; Also includes: A spoiler ring is provided in the air inlet, and the spoiler ring is provided with a first through hole for connecting the reaction chamber and the mixing chamber; The diameter of the first through hole is smaller than the diameter of the reaction chamber; Also includes: A conical structure is located on the side of the shell where the air inlet is provided, and the conical structure is provided with a second through hole and an air inlet opening that are connected. The conical structure is configured to protrude from the air inlet opening toward the first through hole of the spoiler ring, the second through hole is also connected to the air inlet, and the air inlet opening is also connected to the mixing chamber.

2. The ionization device according to claim 1, characterized in that The material of the cone structure is any one of metal Hf, Mo, and W. The surface of the cone structure facing the spoiler ring includes a coating, and the material of the coating is any one or more mixtures of oxides of Fe, Mn, Cu, Ni, and Zn.

3. The ionization device according to claim 2, characterized in that The material of the coating layer of the cone structure is FeO.

4. The ionization device according to any one of claims 1 to 3, characterized in that The housing is arranged to be rotatable relative to the mixing chamber.

5. The ionization device according to claim 4, characterized in that The radio frequency coil is a hollow water-cooled electrode.

6. A coating device, characterized in that: The coating device comprises the ionization device according to any one of claims 1 to 5, and further comprises: a vaporization device, spaced apart from the ionization device, the vaporization device being used to form a material jet, the vaporization device comprising an outflow port, the outflow port being used to eject the material jet; A rotating umbrella stand is arranged opposite to the vaporization device and the ionization device. The rotating umbrella stand is used to fix the product to be plated so that the material jet generated by the vaporization device and the nitrogen ions are deposited together on the product to be plated to form a nitride film.

7. The coating equipment according to claim 6, characterized in that: The material jet is titanium vapor.

Images