A non-uniformity correction method for resistor array infrared simulation system

Abstract

The present application relates to the technical field of non-uniformity correction of infrared radiation output, and specifically to a non-uniformity correction method for a resistor array infrared simulation system, the method comprising: obtaining a gradient mean matrix; calculating characteristic distances between resistor elements; dividing the resistor array into regions using characteristic distances; determining the adaptability of each region division scheme; using the adaptability to obtain the optimal region division scheme using a particle swarm optimization algorithm; performing correction based on calibration data of resistor elements in each region divided by the optimal region division scheme, obtaining a voltage response curve of each resistor element in each region, and using the voltage response curve to output a suitable voltage to control the infrared radiation output of the resistor element. The present application aims to avoid the situation where the general voltage response curve has a poor fitting effect on some resistor elements, reduce the error in uniformity correction, and improve the final infrared imaging quality.

Description

Technical Field

[0001] The present application relates to the technical field of non-uniformity correction of infrared radiation output, and in particular to a non-uniformity correction method for a resistor array infrared simulation system. Background Art

[0002] Resistor array infrared simulation is a method for generating simulated infrared images. When controlling the resistor array to generate simulated infrared images, the temperature of the resistor elements in the resistor array is increased by controlling the voltage to simulate the infrared radiation emitted by the actual object, and the infrared image is captured by an infrared imaging device. When controlling the resistor array, due to the performance differences between different resistor elements, non-uniformity correction is required. In the current non-uniformity correction method, a sparse grid method is used to obtain the voltage response data of the resistor element, a universal voltage response curve is constructed for all resistor elements through the piecewise function method, and the deviation value is calculated for each resistor element. Each resistor element is individually controlled through the universal voltage response curve and the deviation value of the resistor element to complete the non-uniformity correction.

[0003] The use of a universal voltage response curve, rather than calculating the voltage response curve for each resistor element separately, is to avoid overfitting the voltage response curve to the calibration data of a certain resistor element. However, using the same voltage response curve for all resistor elements ignores the mutual influence between adjacent resistor elements, which may cause the universal voltage response curve to fit some resistor elements poorly, thereby affecting the quality of infrared imaging. Therefore, during the infrared simulation of resistor arrays, there is a situation where some resistor elements have a poor fitting effect with the voltage response curve, which will lead to errors in uniformity correction, thereby causing a decrease in the quality of infrared imaging. Summary of the invention

[0004] In order to solve the above technical problems, the present application provides a non-uniformity correction method for a resistor array infrared simulation system to solve the existing problems.

[0005] A non-uniformity correction method for a resistor array infrared simulation system of the present application adopts the following technical solution:

[0006] An embodiment of the present application provides a method for correcting non-uniformity of a resistor array infrared simulation system, the method comprising the following steps:

[0007] Obtaining the infrared radiation output of each resistor element in the resistor array at different voltages and calibrating it to obtain calibration data for each resistor element;

[0008] Based on the gradient distribution of the infrared radiation output of the resistor elements in the resistor array under all different voltages, a gradient mean matrix is ​​obtained;

[0009] Calculate the characteristic distance between the resistor elements based on the numerical differences between the elements in the gradient mean matrix and the distances between the resistor elements corresponding to the elements;

[0010] A number of resistor elements are randomly selected as regional centers on the resistor array each time, and the coordinates of all the regional centers randomly selected each time are used to form a search vector for each regional division scheme; the resistor array is divided into regions based on the characteristic distance between any other resistor element and each regional center;

[0011] Based on the resistor calibration data of each area after division, the intra-class variance sum and the inter-class variance sum are calculated to determine the adaptability of each area division scheme;

[0012] Several search vectors are randomly selected as particles, and the particle swarm optimization algorithm is used to obtain the optimal region division scheme based on the adaptability of the region division scheme corresponding to the particles.

[0013] The calibration data of the resistor element in each area divided based on the optimal area division scheme is corrected, the voltage response curve of each resistor element in each area is obtained, and the voltage response curve is used to output a suitable voltage to control the infrared radiation output of the resistor element.

[0014] Preferably, the calibration data of each resistor element is the infrared radiation output of the resistor element at different voltages.

[0015] Preferably, the method for obtaining the gradient mean matrix is: the infrared radiation output of each resistor element under the same voltage is combined into an infrared radiation matrix according to the coordinate position in the resistor array; the gradient value matrix of the infrared radiation matrix is ​​obtained; and the mean values ​​of the corresponding elements at the same position in the gradient value matrix obtained under all voltages are combined into a gradient mean matrix.

[0016] Preferably, the gradient value matrix is ​​a matrix composed of corresponding element values ​​in the gradient matrix of the infrared radiation matrix.

[0017] Preferably, the characteristic distance between the resistor elements is obtained by multiplying the distance between the resistor elements corresponding to the elements in the gradient mean matrix and the difference in element values.

[0018] Preferably, the method for performing area division is: obtaining the center of the area that is closest to the characteristic distance between any other resistor elements, and assigning any resistor element to the area where the center of the area is located.

[0019] Preferably, the method for determining the adaptability of each area division scheme includes:

[0020] The infrared radiation output at different voltages in the calibration data of each resistor element in each area is used to form a response characteristic vector of each resistor element;

[0021] The response characteristic vectors of all resistor elements in each region are used to construct the region vector of the corresponding region;

[0022] Obtain the intra-class variance and inter-class variance of the region vectors of all regions under each region division scheme;

[0023] The ratio of the between-class variance sum to the within-class variance sum is used as the adaptability of the corresponding region division scheme.

[0024] Preferably, the method for obtaining the optimal area division scheme includes:

[0025] The adaptability of the particle corresponding to the area division scheme is used as the adaptability of the corresponding particle, and the particle swarm optimization algorithm is used to output the optimal particle;

[0026] The region division scheme corresponding to the optimal particle is obtained as the optimal region division scheme.

[0027] Preferably, the method for acquiring the voltage response curve includes:

[0028] The calibration data of all resistors in each area divided by the optimal area division scheme is used as input, and a multi-point calibration non-uniformity correction method is used to output a response curve, which is recorded as the regional voltage response curve of the corresponding area, and the deviation value of each resistor in the corresponding area is output at the same time;

[0029] For each resistor element in each region, the regional voltage response curve of the region where the resistor element is located is translated upward by the deviation value of the resistor element by units to obtain the voltage response curve of the resistor element.

[0030] Preferably, the step of controlling the infrared radiation output of the resistor element by outputting a suitable voltage using the voltage response curve includes:

[0031] When the infrared radiation output of the preset value is emitted for the resistor element to be controlled, a voltage corresponding to the infrared radiation output of the preset value on the voltage response curve of the resistor element to be controlled is obtained;

[0032] The corresponding voltage is used to control the infrared radiation output of the resistor element to be controlled.

[0033] This application has at least the following beneficial effects:

[0034] In view of the poor fitting effect caused by the use of a universal voltage response curve for all resistor elements in the traditional non-uniformity correction method of the resistor array infrared simulation system, this embodiment proposes a non-uniformity correction method for the resistor array infrared simulation system, including: arranging the gradient distribution of the infrared radiation output of different resistor elements according to the position of the resistor elements to obtain a gradient mean matrix, characterizing the difference in response characteristics between the resistor elements and the adjacent resistor elements; calculating the characteristic distance between any two resistor elements through the gradient mean matrix, characterizing the difference in response characteristics between any two resistor elements; randomly selecting multiple resistor elements on the resistor array as the center of the region, dividing the resistor array into regions using the characteristic distance, and calculating the intra-class variance sum and the inter-class variance sum for the resistor element calibration data after the region division, constructing the adaptability, and characterizing the rationality of different resistor array region division schemes. Finally, an optimization algorithm is used to obtain the optimal region division scheme in combination with the adaptability, and the calibration data of the resistor elements in the region divided by the optimal region division scheme is corrected, and the response characteristic curve of each resistor element in each region is obtained, and the voltage response curve is used to output a suitable voltage to control the infrared radiation output of the resistor element. Since this embodiment utilizes the mutual influence of the voltage characteristics of adjacent resistor elements, a voltage response curve is used to replace the general voltage response curve, thereby avoiding the poor fitting effect of the general voltage response curve on some resistor elements, reducing the error in uniformity correction, and improving the final infrared imaging quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions and advantages in the embodiments of the present application or the prior art, the drawings required for use in the embodiments or the prior art descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0036] Figure 1 A flowchart of a method for correcting non-uniformity of a resistor array infrared simulation system provided in an embodiment of the present application;

[0037] Figure 2 A schematic diagram of area division provided in an embodiment of the present application. DETAILED DESCRIPTION

[0038] In order to further explain the technical means and effects adopted by the present application to achieve the predetermined invention purpose, the following is a detailed description of the non-uniformity correction method of a resistor array infrared simulation system proposed in the present application, its specific implementation method, structure, features and effects, in combination with the accompanying drawings and preferred embodiments. In the following description, different "one embodiment" or "another embodiment" does not necessarily refer to the same embodiment. In addition, specific features, structures or characteristics in one or more embodiments may be combined in any suitable form.

[0039] Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.

[0040] The following is a detailed description of a method for correcting non-uniformity of a resistor array infrared simulation system provided by the present application in conjunction with the accompanying drawings.

[0041] An embodiment of the present application provides a method for correcting non-uniformity of a resistor array infrared simulation system.

[0042] In a resistor array that has not been corrected for uniformity, local high-temperature group noise will appear. The reason why this noise appears regionally is that adjacent resistor elements affect each other.

[0043] In this embodiment, in order to solve the problem that the universal voltage response curve has a poor fitting effect on some resistor elements, based on the phenomenon that adjacent resistor elements influence each other and cause their voltage response characteristics to be similar, the resistor array is divided into multiple areas, and a corresponding regional voltage response curve is used for each area to replace the universal voltage response curve, thereby improving the accuracy of non-uniformity correction.

[0044] Specifically, a non-uniformity correction method for a resistor array infrared simulation system is provided as follows. Figure 1 , the method comprises the following steps:

[0045] The first step is to obtain the infrared radiation output of each resistor element in the resistor array under different voltages and calibrate it to obtain calibration data of each resistor element.

[0046] The resistor array involved in this embodiment is The resistor array has a total of resistance element; at the same time, in this embodiment, the infrared radiation output range of the resistance element is set to 0 to 10°C, the voltage range is 0 to 5 volts, and the measurement step is 0.5 volts.

[0047] That is, for each resistor element in the resistor array, an infrared radiation output under different voltages can be obtained, and the infrared radiation output of each resistor element under different voltages is calibrated. This embodiment adopts the resistor array sparse grid correction method to obtain the calibration data of each resistor element in the resistor array. The resistor array sparse grid correction method is a commonly used technology in the field of infrared simulation and will not be repeated here.

[0048] After calibrating each resistor element in the resistor array using the resistor array sparse grid correction method, the calibration data of N resistor elements was obtained, and the calibration data was the infrared radiation output under different voltages. From the voltage range of 0 to 5 volts, the measurement step length was 0.5 volt, and a total of V = 11 voltages were obtained, that is, the calibration data was the infrared radiation output corresponding to each of V voltages.

[0049] At this point, the calibration data of each resistor element in the resistor array can be obtained through the above method.

[0050] The second step is to obtain a gradient mean matrix based on the gradient distribution of the infrared radiation output of the resistor elements in the resistor array under all different voltages.

[0051] Since adjacent resistors in a resistor array are prone to mutual influence, the voltage response characteristics of resistors usually show regional characteristics. The infrared radiation output of resistors under the same voltage is arranged into an infrared radiation matrix according to the coordinate position of the resistors in the resistor array. If the intensity of the infrared radiation output change of the nth resistor is greater, it means that the voltage response characteristics of the nth resistor and its adjacent resistors are more different, and they should not share the same voltage response curve.

[0052] Therefore, this embodiment calculates the frequency domain characteristics of the infrared radiation output of the resistor array to characterize the difference in voltage response characteristics between adjacent resistor elements.

[0053] Obtain the infrared radiation output of all resistor elements when the input voltage is v, and arrange them into an infrared radiation matrix of X=1024 rows and Y=1024 columns according to the coordinate positions of the resistor elements in the resistor array;

[0054] The infrared radiation matrix with voltage v is further used as the input of the filtering algorithm. The filtering operator of the filtering algorithm adopts the Sobel operator and outputs a gradient matrix. The gradient matrix is ​​a matrix of the same size as the infrared radiation matrix. Each element in the matrix contains a value and a direction, where the value represents the gradient size of the corresponding element position in the infrared radiation matrix. The larger the gradient, the greater the frequency of data change of the element position.

[0055] Therefore, the values ​​in the gradient matrix are retained to form a matrix of the same size as the infrared radiation matrix, which is recorded as the gradient value matrix. The gradient value matrix is ​​a matrix of X rows and Y columns, in which each element corresponds to a resistor element one by one, and the element value represents the frequency of infrared radiation change at the corresponding resistor element position. The greater the frequency of change, the greater the difference in voltage response characteristics between the resistor element and the adjacent resistor element. Among them, the matrix filtering algorithm and the Sobel operator are commonly used technologies in the field of data processing, and are not repeated in this application.

[0056] In this embodiment, there are a total of V types of input voltages, so V gradient value matrices can be obtained; the elements at the same position of the V gradient value matrices are averaged, and all the averages are formed into an X-row and Y-column matrix according to the calculation position, which is recorded as a gradient mean matrix, where the element value represents the infrared radiation change intensity of the corresponding resistor element position.

[0057] In the third step, the characteristic distance between the resistor elements is calculated based on the numerical differences between the elements in the gradient mean matrix and the distances between the resistor elements corresponding to the elements.

[0058] When determining the distances from resistor elements to different centers, this embodiment needs to divide the regions according to the voltage response characteristics of the resistor elements. Therefore, this embodiment calculates the characteristic distance based on the differences between the resistor elements in the gradient mean matrix to determine the region to which the resistor elements belong.

[0059] When calculating the characteristic distance, the infrared radiation change frequency of the resistor elements between the two resistor elements is mainly considered. If the sum of the infrared radiation change frequencies of the resistor elements on the continuous path of the two resistor elements is larger, it means that the voltage response characteristics between the two resistor elements are more different.

[0060] When the kth resistor element is the center of the region, the characteristic distance from the nth resistor element to the kth resistor element is calculated, specifically:

[0061] Connect the kth resistor element to the nth resistor element on the resistor array to obtain all the resistor elements passing through the continuous line segment, and calculate the average of the element values ​​of these resistor elements in the gradient mean matrix, which is recorded as the first characteristic difference , and calculate the distance from the kth resistor element to the nth resistor element, recorded as the second characteristic difference Finally, the characteristic distance between the nth resistor element and the kth resistor element is calculated based on the first characteristic difference and the second characteristic difference. , the expression is: ; Among them, the first characteristic difference Represents the frequency domain change from the nth resistor element to the kth resistor element. The smaller the frequency domain change, the smaller the characteristic difference from the nth resistor element to the kth resistor element, and the characteristic distance The smaller the second characteristic difference The smaller it is, the closer the two resistor elements are in space, and the more similar their voltage response characteristics are.

[0062] In this embodiment, the distance between two resistor elements is calculated by using the number of resistor elements on the connection line between the resistor elements. In other embodiments of the present application, other methods such as Euclidean distance are used for calculation.

[0063] At this point, the characteristic distance between the resistor elements can be calculated using the method in this step.

[0064] The fourth step is to randomly select several resistor elements as region centers on the resistor array each time, and use the coordinates of all the region centers randomly selected each time to form a search vector for each region division scheme; the resistor array is divided into regions based on the characteristic distance between any other resistor element and each region center.

[0065] In this embodiment, the same voltage response curve is used for resistor elements with similar resistance characteristics, so the resistor elements need to be divided into regions. When dividing the regions, this embodiment first randomly selects K resistor elements as the regional centers, and then determines the region where the resistor element belongs to the regional center according to the distance from each resistor element to the regional center. In this embodiment, the value of K is 10.

[0066] This embodiment uses an optimization algorithm to divide the resistor array into regions. Therefore, it is necessary to obtain digital representations of different region division schemes, and then perform adaptability calculations on each region division scheme to determine the pros and cons of different region division schemes.

[0067] In this embodiment, the coordinates of K area centers are randomly selected from the resistor array each time to form a vector, which is recorded as the search vector of each area division scheme formed by each random selection, so that a vector with a length of A vector of , where the first element and the second element in the search vector represent the horizontal coordinate and the vertical coordinate of the center of the first resistor element in the resistor array, respectively, the third element and the fourth element represent the horizontal coordinate and the vertical coordinate of the center of the second resistor element in the resistor array, respectively, and so on.

[0068] In this embodiment, K=10. In particular, it is specified that the centers of the K regions represented by the search vector are different resistance elements.

[0069] Furthermore, for a search vector, its determined regional center is marked on the resistor array, and for the nth resistor element that is not the regional center, its characteristic distances with the K regional centers are calculated respectively, and the nth resistor element is assigned to the region where the regional center with the smallest characteristic distance is located.

[0070] In this embodiment, the schematic diagram of area division is as follows: Figure 2 shown.

[0071] exist Figure 2 In the example, when K=3, there are three resistor element centers. First, mark the center of the region on the resistor array, which are , , , then for the nth resistor element, calculate the characteristic distance between it and the three area centers respectively, as follows Figure 2 The nth resistor element in If the characteristic distance between the centers of the regions is the shortest, the nth resistor element is assigned to the The area where the regional center is located.

[0072] The operation in this step is performed on all resistor elements. At this point, the area division of each area division scheme can be completed.

[0073] The fifth step is to calculate the intra-class variance sum and the inter-class variance sum based on the resistor element calibration data of each area after division, and determine the adaptability of each area division scheme.

[0074] When evaluating the adaptability of each area division scheme, the more similar the voltage response characteristics of the resistors in the area divided according to the area division scheme are, and the greater the difference in the voltage response characteristics of the resistors in different areas is, the better the effect of the area division scheme is.

[0075] If the resistor element centers represented by any two search vectors are not exactly the same, then the two search vectors represent two different area division schemes. There are a total of H area division schemes according to the permutations and combinations.

[0076] For the h-th area division scheme, the adaptability is constructed as follows in this embodiment:

[0077] Firstly, the calibration data of the nth resistor element is used to obtain a vector of its infrared radiation output under different voltages, which is recorded as the response characteristic vector of the nth resistor element.

[0078] Furthermore, for the h-th area division scheme, the response characteristic vectors of all resistor elements in the k-th area are obtained to form the k-th group of area vectors. Since there are K areas, K area vectors can be obtained.

[0079] Further, the K groups of regional vectors of the h-th regional division scheme are taken as input, and the calculation method of the intra-class variance sum and the inter-class variance sum is adopted to output the intra-class variance sum of the h-th regional division scheme. and the between-class variance .

[0080] Among them, the calculation methods of the intra-class variance sum and the inter-class variance sum are commonly used techniques in the field of data processing and will not be repeated here.

[0081] It should be understood that the within-class variance and The smaller the value, the more similar the voltage response characteristics of the resistors in each region are, and the better the regional division effect. The larger it is, the greater the difference in the voltage response characteristics of the resistor elements between the K regions, and the better the regional division effect.

[0082] In particular, when the sum of the intra-class variances is 0, it indicates that the response characteristics of each resistor element in the resistor array are balanced, and no non-uniformity correction is required, and the adaptability is not calculated.

[0083] Finally, calculate the adaptability of the h-th region division scheme , the adaptability of the h-th area division scheme The expression is: ; It should be noted that the intra-class variance and The smaller the between-class variance and The larger it is, the greater the adaptability is, and the better the h-th region division scheme is.

[0084] In the sixth step, several search vectors are randomly selected as particles, and the particle swarm optimization algorithm is used to obtain the optimal region division scheme based on the adaptability of the region division scheme corresponding to the particles.

[0085] This embodiment adopts a particle swarm optimization algorithm to obtain the optimal area division scheme. In other embodiments of the present application, a wolf pack algorithm or a genetic algorithm may be used instead of the particle swarm optimization algorithm. Among them, the particle swarm optimization algorithm, the wolf pack algorithm and the genetic algorithm are all well-known technologies and will not be described in detail.

[0086] Among them, the specific implementation steps of using particle swarm optimization algorithm to obtain the optimal area division scheme are:

[0087] Random Selection search vectors, since the length of each search vector is , each search vector is taken as A particle in dimensional space corresponds to particles, and at this time the The speed of each particle is 0. =25.

[0088] by dimensional space as the search space, and the adaptability of each particle's corresponding region division scheme as the adaptability of the corresponding particle. The particle swarm optimization algorithm is used for calculation. The necessary parameters are: the particle swarm size is , the number of search iterations is The output of the particle swarm optimization algorithm is the optimal particle. The data storage form of this optimal particle is a 2*K search vector, which corresponds to a regional division scheme, which is used as the optimal regional division scheme, and the regional voltage response curve is further calculated using this regional division scheme. In this embodiment The value is 50.

[0089] The seventh step is to calibrate the calibration data of the resistor element in each area divided based on the optimal area division scheme, obtain the voltage response curve of each resistor element in each area, and use the voltage response curve to output a suitable voltage to control the infrared radiation output of the resistor element.

[0090] Based on the optimal region division scheme corresponding to the optimal particle obtained by the particle swarm optimization algorithm, calibration data is obtained for all resistor elements in the kth region of the region division scheme. Assuming that there are The calibration data of all resistor elements in the kth region are used as input, and the multi-point calibration non-uniformity correction method is used for calculation, and the output is a response curve, which is recorded as the regional voltage response curve of the kth region. , while outputting Deviation value, Deviation value Corresponding to Among them, the multi-point calibration non-uniformity correction method is a common technology in the field of infrared simulation and will not be described in detail.

[0091] Further, for The corresponding voltage response curve is ,in, is the kth region The voltage response curve of a resistor element is is the kth region The deviation value of each resistor element, is the regional voltage response curve of the kth region.

[0092] That is, the regional voltage response curve of the kth region is shifted upward units, and get Voltage response curve of a resistor element .

[0093] Finally, the K regions are calculated using the multi-point calibration non-uniformity correction method, and the corresponding voltage response curve is obtained for each resistor element.

[0094] When using the resistor array infrared simulation system for simulation, when the nth resistor element is controlled to emit infrared radiation of a preset value, this embodiment assumes that the infrared radiation with an intensity of T is emitted, obtains the voltage response curve of the resistor element, and constructs the equation , calculate the voltage v, and use the voltage v to control the infrared radiation output of the nth resistor element, so as to eliminate the non-uniform noise caused by the difference in resistor element characteristics and complete the non-uniformity correction.

[0095] Since this embodiment extracts features from the calibration data based on the mutual influence of voltage characteristics of adjacent resistor elements, and divides the resistor array into regions using an optimization algorithm, a regional voltage response curve is used for the resistor elements in the region to replace the universal voltage response curve of the traditional non-uniformity correction algorithm. This can avoid the situation where the fitting effect between some resistor elements and the universal voltage response curve is poor, solve the errors caused by uniformity correction, and improve the final infrared imaging quality.

[0096] The various embodiments in the present application are described in a progressive manner, and the same or similar parts between the various embodiments can be referenced to each other, and each embodiment focuses on the differences from other embodiments.

[0097] It should be noted that, unless otherwise specified and limited, terms such as "include", "comprises" or any other variants thereof are intended to cover non-exclusive inclusion, so that a circuit structure, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such article or device. In the absence of further restrictions, an element defined by the sentence "including one..." does not exclude the existence of other identical elements in the article or device including the element. In addition, the term "and\or" used herein includes any and all combinations of one or more related listed items.

[0098] Those skilled in the art will readily appreciate other embodiments of the present application after considering the specification and practicing the invention herein. The present application is intended to cover any variations, uses or adaptations of the present application, which follow the general principles of the present application and include common knowledge or customary technical means in the art that are not invented by the present application.

[0099] It should be understood that the present application is not limited to the exact construction that has been described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof.

Claims

1. A method for correcting non-uniformity of a resistor array infrared simulation system, characterized in that: The method comprises the following steps: Obtaining the infrared radiation output of each resistor element in the resistor array at different voltages and calibrating it to obtain calibration data for each resistor element; Based on the gradient distribution of the infrared radiation output of the resistor elements in the resistor array under all different voltages, a gradient mean matrix is ​​obtained; Calculate the characteristic distance between the resistor elements based on the numerical differences between the elements in the gradient mean matrix and the distances between the resistor elements corresponding to the elements; A number of resistor elements are randomly selected as regional centers on the resistor array each time, and the coordinates of all the regional centers randomly selected each time are used to form a search vector for each regional division scheme; the resistor array is divided into regions based on the characteristic distance between any other resistor element and each regional center; Based on the resistor calibration data of each area after division, the intra-class variance sum and the inter-class variance sum are calculated to determine the adaptability of each area division scheme; Several search vectors are randomly selected as particles, and the particle swarm optimization algorithm is used to obtain the optimal region division scheme based on the adaptability of the region division scheme corresponding to the particles. The calibration data of the resistor element in each area divided based on the optimal area division scheme is corrected, the voltage response curve of each resistor element in each area is obtained, and the voltage response curve is used to output a suitable voltage to control the infrared radiation output of the resistor element.

2. The non-uniformity correction method of a resistor array infrared simulation system as claimed in claim 1, characterized in that: The calibration data of each resistor element is the infrared radiation output of the resistor element at different voltages.

3. The non-uniformity correction method of a resistor array infrared simulation system as claimed in claim 1, characterized in that: The method for obtaining the gradient mean matrix is ​​as follows: the infrared radiation output of each resistor element under the same voltage is combined into an infrared radiation matrix according to the coordinate position in the resistor array; the gradient value matrix of the infrared radiation matrix is ​​obtained; and the mean values ​​of the corresponding elements at the same position in the gradient value matrix obtained under all voltages are combined into a gradient mean matrix.

4. The non-uniformity correction method of a resistor array infrared simulation system as claimed in claim 3, characterized in that: The gradient value matrix is ​​a matrix composed of corresponding element values ​​in the gradient matrix of the infrared radiation matrix.

5. The non-uniformity correction method of a resistor array infrared simulation system as claimed in claim 1, characterized in that: The characteristic distance between the resistor elements is obtained by multiplying the distance between the resistor elements corresponding to the elements in the gradient mean matrix and the difference in element values.

6. The non-uniformity correction method of a resistor array infrared simulation system as claimed in claim 1, characterized in that: The method for performing area division is: obtaining the center of the area that is closest to the characteristic distance between any other resistor elements, and assigning any resistor element to the area where the center of the area is located.

7. The non-uniformity correction method of a resistor array infrared simulation system as claimed in claim 2, characterized in that: The method for determining the adaptability of each area division scheme includes: The infrared radiation output at different voltages in the calibration data of each resistor element in each area is used to form a response characteristic vector of each resistor element; The response characteristic vectors of all resistor elements in each region are used to construct the region vector of the corresponding region; Obtain the intra-class variance and inter-class variance of the region vectors of all regions under each region division scheme; The ratio of the between-class variance sum to the within-class variance sum is used as the adaptability of the corresponding region division scheme.

8. The non-uniformity correction method of a resistor array infrared simulation system as claimed in claim 7, characterized in that: The method for obtaining the optimal area division scheme includes: The adaptability of the particle corresponding to the area division scheme is used as the adaptability of the corresponding particle, and the particle swarm optimization algorithm is used to output the optimal particle; The region division scheme corresponding to the optimal particle is obtained as the optimal region division scheme.

9. The non-uniformity correction method of a resistor array infrared simulation system as claimed in claim 1, characterized in that: The method for obtaining the voltage response curve includes: The calibration data of all resistors in each area divided by the optimal area division scheme is used as input, and a multi-point calibration non-uniformity correction method is used to output a response curve, which is recorded as the regional voltage response curve of the corresponding area, and the deviation value of each resistor in the corresponding area is output at the same time; For each resistor element in each region, the regional voltage response curve of the region where the resistor element is located is translated upward by the deviation value of the resistor element by units to obtain the voltage response curve of the resistor element.

10. The non-uniformity correction method of a resistor array infrared simulation system according to claim 1, characterized in that: The method of using the voltage response curve to output a suitable voltage to control the infrared radiation output of the resistor element includes: When the infrared radiation output of the preset value is emitted for the resistor element to be controlled, a voltage corresponding to the infrared radiation output of the preset value on the voltage response curve of the resistor element to be controlled is obtained; The corresponding voltage is used to control the infrared radiation output of the resistor element to be controlled.

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