Deposition furnace and deposition method thereof

Abstract

The present invention discloses a deposition furnace and a deposition method thereof, wherein the deposition furnace comprises a shell, a partition, a reaction chamber and a deposition chamber. The shell defines a cavity. The partition is arranged in the cavity and divides the cavity into a first cavity and a second cavity. The reaction chamber is located in the first cavity, and the reaction chamber is used to generate deposition gas. The deposition chamber is located in the second cavity, and the deposition chamber is connected to the second cavity and the reaction chamber. The air pressure of the first cavity is configured to be higher than the air pressure of the second cavity, so as to force the deposition gas to flow from the reaction chamber to the deposition chamber. This solution can effectively avoid the situation where the deposition gas cannot be deposited at the correct position, causing waste, improve the vapor deposition effect and the collection rate of the deposition gas; and can prevent the situation where the deposition gas leaks and causes corrosion of parts, improve the sealing of the reaction chamber, greatly reduce the replacement frequency of parts, and thus reduce production costs and improve production efficiency.

Description

Technical Field

[0001] The invention relates to the technical field of vapor deposition, and in particular to a deposition furnace and a deposition method thereof. Background Art

[0002] In battery manufacturing, silicon monoxide materials are used to develop large-capacity batteries. Specifically, a deposition furnace is used for vapor deposition. In the related art, the deposition furnace includes a reaction chamber and a deposition chamber. The reaction chamber can generate deposition gas by heating the raw materials, and the deposition chamber can perform vapor deposition. However, due to the high temperature in the reaction chamber, the reaction chamber cannot be completely sealed, that is, the deposition gas generated in the reaction chamber will leak from the reaction chamber to the external cavity, resulting in part of the deposition gas being unable to be deposited in the correct position, causing waste, and the leaked deposition gas will react with the parts in the furnace or be deposited on the parts, causing damage to the parts. Therefore, damaged parts need to be replaced frequently, which will increase production costs and reduce production efficiency. Summary of the invention

[0003] The main purpose of the present invention is to provide a deposition furnace and a deposition method thereof, aiming to solve the technical problem that the deposition gas cannot be deposited at the target position.

[0004] To achieve the above objectives, a first embodiment of the present invention provides a deposition furnace, comprising:

[0005] A housing defines a cavity;

[0006] A partition plate is disposed in the cavity and divides the cavity into a first cavity and a second cavity;

[0007] A reaction chamber, located in the first chamber, and used to generate deposition gas;

[0008] A deposition chamber, located in the second chamber, the deposition chamber is connected to the second chamber and the reaction chamber;

[0009] The gas pressure of the first chamber is configured to be higher than the gas pressure of the second chamber, so as to force the deposition gas to flow from the reaction chamber to the deposition chamber.

[0010] In some embodiments, the deposition furnace includes a pressurizing portion configured to increase the gas pressure of the first cavity so that the gas pressure of the first cavity is higher than the gas pressure of the second cavity.

[0011] In some embodiments, the pressurizing part includes a first tube and a first gas valve located outside the shell, the first tube is connected to the first cavity to transport inert gas to the first cavity, and the first gas valve is used to control the opening and closing of the first tube.

[0012] In some embodiments, the deposition furnace includes a second tube body located in the shell, one end of the second tube body is connected to the reaction chamber, and the other end of the second tube body is connected to the deposition chamber.

[0013] In some embodiments, the deposition furnace includes a bypass pipe and a second gas valve located outside the shell, one end of the bypass pipe is connected to the first cavity, and the other end is connected to the second cavity, and the second gas valve is used to control the opening and closing of the bypass pipe.

[0014] In some embodiments, the deposition furnace includes a third tube and a third gas valve located outside the shell, the third tube is connected to the second cavity and the bypass pipe, and the third gas valve is used to control the opening and closing of the second tube.

[0015] In some embodiments, the reaction chamber includes a heat-insulating shell, a crucible, and a heating element. The heat-insulating shell defines a reaction chamber, and the crucible and the heating element are disposed in the reaction chamber.

[0016] In some embodiments, the deposition bin includes a deposition shell and a deposition cylinder, the deposition shell defines a deposition cavity, the deposition cylinder is disposed in the deposition shell, and the deposition shell includes an opening communicating with the deposition cavity.

[0017] In some embodiments, the deposition furnace includes a first measuring piece and a second measuring piece, the first measuring piece is used to measure the gas pressure of the first cavity, and the second measuring piece is used to measure the gas pressure of the second cavity.

[0018] A second embodiment of the present invention provides a deposition method, using the deposition furnace of the above embodiment, the deposition method comprises the following steps:

[0019] Connecting the first cavity and the second cavity, and evacuating the first cavity and the second cavity;

[0020] separating the first cavity from the second cavity;

[0021] The gas pressure of the first chamber is made higher than the gas pressure of the second chamber, so that the deposition gas flows from the reaction chamber to the deposition chamber.

[0022] Compared with the prior art, the beneficial effects of the present invention include:

[0023] In the technical solution of the present invention, the deposition furnace includes a shell, a partition, a reaction chamber and a deposition chamber. The shell defines a cavity. In the prior art, the reaction chamber cannot be completely sealed due to the high temperature, and the deposition gas will leak from the reaction chamber. The partition in this solution can separate the cavity into a first cavity and a second cavity. The reaction chamber is arranged in the first cavity, and the deposition chamber is arranged in the second cavity. The deposition chamber is connected to the second cavity and the reaction chamber, that is, the air pressure in the reaction chamber is consistent with the air pressure in the deposition chamber and the air pressure in the second cavity. The air pressure of the first cavity outside the reaction chamber can be higher than the air pressure of the second cavity, that is, the present solution can effectively inhibit the deposition gas from leaking from the reaction chamber to the first cavity, and can force the deposition gas to flow from the reaction chamber to the deposition chamber to achieve deposition. Therefore, the present solution can effectively avoid the situation where the deposition gas cannot be deposited at the correct position and cause waste, improve the vapor deposition effect and the collection rate of the deposition gas; and can prevent the corrosion of parts caused by the leakage of deposition gas, improve the sealing of the reaction chamber, greatly reduce the replacement frequency of parts, and thus reduce production costs and improve production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.

[0025] Figure 1 Schematic diagram of a deposition furnace in one embodiment of the present invention; wherein the line segment with an arrow indicates the direction of the deposition gas;

[0026] Figure 2 Schematic diagram of a deposition furnace in one embodiment of the present invention; wherein the line segment with an arrow indicates the direction of the inert gas;

[0027] Figure 3 FIG. 4 is an operation flow chart of a deposition method in one embodiment of the present invention.

[0028] Description of Figure Numbers:

[0029] Deposition furnace 10;

[0030] Shell 100; cavity 110; first cavity 111; second cavity 112;

[0031] Partition 200;

[0032] Reaction chamber 300; insulation shell 310; crucible 320; heating element 330; reaction chamber 340; material feeding cover 350; transition cover 360;

[0033] Deposition chamber 400; deposition shell 410; opening 411; deposition cylinder 420; deposition chamber 430;

[0034] Pressurizing part 500; first tube body 510; first air valve 520;

[0035] second tube body 600;

[0036] Bypass pipe 710; second gas valve 720;

[0037] The third pipe body 810; the third air valve 820;

[0038] A first measuring member 910; a second measuring member 920;

[0039] Raw material 20.

[0040] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0041] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0042] In battery manufacturing, silicon monoxide materials are used to develop large-capacity batteries. Specifically, a deposition furnace is used for vapor deposition. In the related art, the deposition furnace includes a reaction chamber and a deposition chamber. The reaction chamber can generate deposition gas by heating the raw materials, and the deposition chamber can perform vapor deposition. However, due to the high temperature in the reaction chamber, the reaction chamber cannot be completely sealed, that is, the deposition gas generated in the reaction chamber will leak from the reaction chamber to the external cavity, resulting in part of the deposition gas being unable to be deposited in the correct position, causing waste, and the leaked deposition gas will react with the parts in the furnace or be deposited on the parts, causing damage to the parts. Therefore, damaged parts need to be replaced frequently, which will increase production costs and reduce production efficiency.

[0043] Specifically, the applicant found that referring to Figure 1 When the heating element 330 is used to heat the raw material 20 in the reaction chamber 300, the temperature in the reaction chamber 300 is very high, that is, the elastic element with good sealing performance cannot be used to seal the interface of the reaction chamber 300, resulting in poor sealing performance. In addition, the bonding surface between the feed cover 350 of the reaction chamber 300 and the crucible 320 and the bonding surface between the crucible 320 and the transition cover 360 will deform at high temperatures, further resulting in poor sealing performance of the reaction chamber 300, that is, deposition gas leakage will occur.

[0044] In view of this, the first embodiment of the present invention proposes a deposition furnace 10 that can effectively avoid the leakage of deposition gas. It should be noted that the deposition furnace 10 can be used for the vapor deposition of various materials such as silicon oxide, silicon nitride, zinc oxide, aluminum oxide, graphene, and silicon carbide. Some embodiments of the present application take the deposition furnace 10 used for silicon oxide as an example for description. Figure 1 and Figure 2 The deposition furnace 10 according to the embodiment of the present application is introduced. Specifically, the deposition furnace 10 includes a housing 100 , a partition plate 200 , a reaction chamber 300 , and a deposition chamber 400 .

[0045] Reference Figure 1 , the shell 100 can define a cavity 110, and the cavity 110 can accommodate the reaction chamber 300 and the deposition chamber 400. The specific structure and material of the shell 100 can be determined according to the actual situation. The partition 200 is used to divide the cavity 110. Specifically, the partition 200 can be arranged in the cavity 110, and can separate the cavity 110 into a first cavity 111 and a second cavity 112, that is, the first cavity 111 and the second cavity 112 are independent of each other. It can be understood that the partition 200 can be connected to the inner circumferential wall of the shell 100. In some embodiments, the partition 200 can be connected to the shell 100 as an integral part. In other embodiments, the partition 200 can also be connected to the shell 100 separately. The specific setting of the partition 200 can be determined according to the actual situation.

[0046] The specific positions of the first cavity 111 and the second cavity 112 are described below. Figure 1 In some embodiments, the cavity on the left side of the partition 200 may be the first cavity 111, and the cavity on the right side of the partition 200 may be the second cavity 112. In other embodiments, the cavity on the right side of the partition 200 may be the first cavity 111, and the cavity on the left side of the partition 200 may be the second cavity 112. In some embodiments of the present application, the cavity on the left side of the partition 200 is the first cavity 111, and the cavity on the right side of the partition 200 is the second cavity 112. The size of the first cavity 111 and the second cavity 112 may be the same or different. In some embodiments of the present application, the first cavity 111 is larger than the second cavity 112.

[0047] Reference Figure 1, the reaction chamber 300 can be arranged in the first cavity 111, and the reaction chamber 300 can generate deposition gas. The deposition chamber 400 can be arranged in the second cavity 112, and the deposition chamber 400 can perform gas deposition operation. It should be noted that the deposition chamber 400 can be connected to the reaction chamber 300 so that the gas in the reaction chamber 300 can enter the deposition chamber 400 to achieve deposition. The deposition chamber 400 can be connected to the second cavity 112, that is, it is convenient to take out the deposit from the deposition chamber 400. Because the deposition chamber 400 connects the second cavity 112 and the reaction chamber 300, the gas pressure of the deposition chamber 400, the second cavity 112 and the reaction chamber 300 tend to be consistent. Among them, the gas pressure of the first cavity 111 outside the reaction chamber 300 can be higher than the gas pressure of the second cavity 112, that is, the deposition gas can flow from the reaction chamber 300 to the deposition chamber 400, so as to achieve directional control of the deposition gas.

[0048] In the technical solution of the present invention, the deposition furnace 10 includes a shell 100, a partition 200, a reaction chamber 300 and a deposition chamber 400. The shell 100 defines a cavity 110. In the prior art, the reaction chamber cannot be completely sealed due to the excessively high temperature, and the deposition gas leaks from the reaction chamber. The partition 200 in this solution can separate the cavity 110 into a first cavity 111 and a second cavity 112. The reaction chamber 300 is disposed in the first cavity 111, and the deposition chamber 400 is disposed in the second cavity 112. The deposition chamber 400 is connected to the second cavity 112 and the reaction chamber 300, that is, the air pressure in the reaction chamber 300 tends to be consistent with the air pressure in the deposition chamber 400 and the air pressure in the second cavity 112. The gas pressure of the first cavity 111 outside the reaction chamber 300 can be higher than the gas pressure of the second cavity 112, that is, the present solution can effectively suppress the deposition gas from leaking from the reaction chamber 300 to the first cavity 111, and can force the deposition gas to flow from the reaction chamber 300 to the deposition chamber 400 to achieve deposition. Therefore, the present solution can effectively avoid the situation where the deposition gas cannot be deposited at the correct position and cause waste, improve the vapor deposition effect and the collection rate of the deposition gas; and can prevent the corrosion of parts caused by the leakage of deposition gas, improve the sealing of the reaction chamber 300, greatly reduce the replacement frequency of parts, and thus reduce production costs and improve production efficiency.

[0049] The specific gas pressure control of the first cavity 111 and the second cavity 112 is described below. In some embodiments, the deposition furnace 10 includes a pressurizing portion 500, which can increase the gas pressure of the first cavity 111 so that the gas pressure of the first cavity 111 is higher than the gas pressure of the second cavity 112. In other embodiments, the deposition furnace 10 may further include a decompression portion, which can reduce the gas pressure of the second cavity 112 so that the gas pressure of the first cavity 111 can be higher than the gas pressure of the second cavity 112. In other embodiments, the deposition furnace 10 includes a pressurizing portion 500 and a decompression portion, which can increase the gas pressure of the first cavity 111, and the decompression portion can reduce the gas pressure of the second cavity 112, thereby forming a pressure difference between the first cavity 111 and the second cavity 112. The specific pressure adjustment operation of the deposition furnace 10 may be determined according to actual conditions. Some embodiments of the present application are described by taking the deposition furnace 10 forcing the gas pressure of the first cavity 111 to be higher than the gas pressure of the second cavity 112 through the pressurizing part 500 as an example.

[0050] Reference Figure 1 and Figure 2 , the specific configuration of the pressurizing part 500 is described below. In some embodiments, the pressurizing part 500 includes a first tube body 510 and a first gas valve 520. It can be understood that the first tube body 510 and the first gas valve 520 are both located outside the housing 100, and the first gas valve 520 can be connected to the first tube body 510. The first tube body 510 can be connected to the first cavity 111, and the end of the first tube body 510 away from the first cavity 111 can be connected to the gas source, that is, the first tube body 510 can deliver inert gas to the first cavity 111, thereby effectively increasing the gas pressure of the first cavity 111, realizing the direction control of the deposition gas, and preventing the deposition gas generated in the reaction chamber 300 from leaking. The first gas valve 520 is used to control the on-off of the first tube body 510, that is, when the gas delivery operation is performed, the first tube body 510 can be kept unobstructed, and when the gas pressure of the first cavity 111 reaches the target value, the first gas valve 520 can block the gas path of the first tube body 510. The inert gas of this solution can achieve pressurization and avoid reaction with the deposition gas, thereby ensuring the deposition effect. It should be noted that in some embodiments of the present application, when the deposition gas is silicon vapor, argon gas can be input for pressurization.

[0051] The specific setting of the pressure reducing part is introduced below, which is not shown in the accompanying drawings. The deposition furnace 10 includes a pressure reducing part. In some embodiments, the pressure reducing part includes an exhaust pipe and an exhaust valve. It can be understood that the exhaust pipe and the exhaust valve can be arranged outside the shell 100, and the exhaust valve is connected to the exhaust pipe. The exhaust pipe can be connected to the second cavity 112, and the second cavity 112 can be evacuated, thereby reducing the air pressure of the second cavity 112 and achieving control of the direction of the deposition gas. In other embodiments, the deposition furnace 10 can also be provided with a cooling part. By lowering the temperature of the second cavity, the gas volume can be reduced, thereby reducing the air pressure of the second cavity 112. The specific setting of the pressure reducing part can be determined according to actual conditions.

[0052] Reference Figure 1 In some embodiments, the deposition furnace 10 includes a second tube 600, which can be disposed in the housing 100. One end of the second tube 600 can be connected to the reaction chamber 300, and the other end can be connected to the deposition chamber 400, that is, the deposition gas generated in the reaction chamber 300 can enter the deposition chamber 400 through the second tube 600 to achieve deposition. It can be understood that in some embodiments, a single second tube 600 can be disposed in the deposition furnace 10. In other embodiments, a plurality of second tubes 600 can also be disposed in the deposition furnace 10. Some embodiments of the present application are described by taking the arrangement of a single second tube 600 as an example. The specific size structure and quantity of the second tube 600 can be determined according to actual conditions.

[0053] Reference Figure 1 In some embodiments, the deposition furnace 10 includes a bypass pipe 710 and a second gas valve 720. The bypass pipe 710 and the second gas valve 720 are both arranged outside the housing 100, and the second gas valve 720 is connected to the bypass pipe 710. One end of the bypass pipe 710 is connected to the first cavity 111, and the other end is connected to the second cavity 112, that is, the first cavity 111 and the second cavity 112 can be connected through the bypass pipe 710. Therefore, before performing the vapor deposition operation, the first cavity 111 or the second cavity 112 can be evacuated (vapor deposition needs to maintain a certain vacuum degree), so that the first cavity 111 and the second cavity 112 are both in a vacuum state. Compared with the scheme of isolating the first cavity and the second cavity from being evacuated, this scheme does not need to repeatedly evacuate the first cavity 111 and the second cavity 112, which can improve the operation efficiency and ensure the consistency of the vacuum degree of the first cavity 111 and the second cavity 112. The second air valve 720 can control the on-off of the bypass pipe 710. When the two cavities need to be vacuumed, the bypass pipe 710 can be kept unobstructed. When the air pressure of the first cavity 111 or the second cavity 112 needs to be adjusted separately, the second air valve 720 can block the air path of the bypass pipe 710.

[0054] Reference Figure 1 and Figure 2In some embodiments, the deposition furnace 10 includes a third tube 810 and a third gas valve 820, and the third tube 810 and the third gas valve 820 are both arranged outside the shell 100. The third tube 810 is connected to the second cavity 112 and the bypass pipe 710. The third gas valve 820 is used to control the on and off of the third tube 810. Specifically, when the deposition furnace 10 is in a low temperature stage, that is, when the deposition gas does not appear, the third gas valve 820 can be opened, and the first cavity 111 and the second cavity 112 can be evacuated at the same time. When the deposition furnace 10 is in a high temperature stage and the deposition gas begins to be generated, the third gas valve 820 can be closed, which can force the deposition gas to be pumped to the second cavity 112 only through the second tube 600. This solution can further improve the control of the direction of the deposition gas, ensure the vapor deposition effect and the collection rate of the deposition gas, and greatly reduce the replacement frequency of parts.

[0055] Reference Figure 1 and Figure 2 , the specific configuration of the reaction chamber 300 is introduced below. In some embodiments, the reaction chamber 300 includes an insulation shell 310, a crucible 320 and a heating element 330. The insulation shell 310 can define a reaction chamber 340, and the crucible 320 and the heating element 330 can be arranged in the reaction chamber 340, that is, the insulation shell 310 can provide a stable thermal environment for the crucible 320. It should be noted that the material and structure of the insulation shell 310 itself cannot prevent the deposition gas from penetrating. The raw material 20 can be placed in the crucible 320. Some embodiments of the present application are described by placing silicon monoxide in the crucible 320 as an example. The heating element 330 can be arranged in the circumference of the crucible 320 to ensure the uniformity of heating. It can be understood that the heating element 330 can be provided singly or in plurality. Some embodiments of the present application are described by setting two heating elements 330 as an example. Figure 1 The left side port of the crucible 320 can be provided with a material feeding cover 350, and the raw material 20 can enter and exit the crucible 320 through the left side port. The right side port of the crucible 320 can be provided with a transition cover 360. The specific configuration of the reaction chamber 300 can be determined according to actual conditions.

[0056] Reference Figure 1 and Figure 2, the specific configuration of the deposition bin 400 is described below. In some embodiments, the deposition bin 400 includes a deposition shell 410 and a deposition cylinder 420. The deposition shell 410 can define a deposition chamber 430, and the deposition cylinder 420 can be disposed in the deposition shell 410. The deposition shell 410 includes an opening 411 connected to the deposition chamber 430, and the opening 411 can be disposed at an end of the deposition chamber 430 that is away from the reaction chamber 300. The specific configuration of the deposition bin 400 can be determined according to actual conditions. The deposition shell 410 of this solution can provide a reliable deposition space for the deposition cylinder 420, and the deposition cylinder 420 can collect deposited materials. The opening 411 of the deposition shell 410 can facilitate the removal of the sediment.

[0057] Reference Figure 1 and Figure 2 In some embodiments, the deposition furnace 10 includes a first measuring member 910 and a second measuring member 920. The first measuring member 910 can be connected to a side of the housing 100 close to the first cavity 111 and communicated with the first cavity 111. The first measuring member 910 can measure the gas pressure of the first cavity 111. The second measuring member 920 can be connected to a side of the housing 100 close to the second cavity 112 and communicated with the second cavity 112. The second measuring member 920 can measure the gas pressure of the second cavity 112. This solution can conveniently monitor the pressure changes of the first cavity 111 and the second cavity 112, ensure the controllability of the deposition process, and achieve stable control of the direction of the deposition gas.

[0058] Reference Figure 3 The second embodiment of the present invention provides a deposition method, using the deposition furnace 10 of the above embodiment. The deposition method comprises the following steps:

[0059] S101: Connect the first cavity 111 and the second cavity 112, and evacuate the first cavity 111 and the second cavity 112. Specifically, open the bypass valve to connect the bypass pipe 710 to the first cavity 111 and the second cavity 112, and open the third gas valve 820 to evacuate the first cavity 111 and the second cavity 112 through the third pipe 810.

[0060] S102: Isolate the first cavity 111 and the second cavity 112, that is, make the first cavity 111 and the second cavity 112 independent of each other. Specifically, when the first cavity 111 and the second cavity 112 reach the target vacuum degree, the second gas valve 720 and the third gas valve 820 can be closed.

[0061] S103: The gas pressure of the first chamber 111 is made higher than the gas pressure of the second chamber 112, so that the deposition gas flows from the reaction chamber 300 to the deposition chamber 400. Specifically, in some embodiments, the inert gas may be input into the first chamber 111 through the first tube 510 to increase the gas pressure of the first chamber 111. In other embodiments, the gas pressure of the second chamber 112 may be reduced by evacuating the gas from the second chamber 112 through the third tube 810. The specific operation may depend on the actual situation.

[0062] This solution can effectively suppress the deposition gas from leaking from the reaction chamber 300 to the first chamber 111, and can force the deposition gas to flow from the reaction chamber 300 to the deposition chamber 400 to achieve deposition. Therefore, this solution can effectively avoid the situation where the deposition gas cannot be deposited at the correct position and cause waste, improve the vapor deposition effect and the collection rate of the deposition gas; and can prevent the corrosion of parts caused by the leakage of deposition gas, improve the sealing of the reaction chamber 300, greatly reduce the replacement frequency of parts, and thus reduce production costs and improve production efficiency.

[0063] Reference Figure 1 and Figure 2 , the following describes a specific deposition process of a deposition furnace 10 of an embodiment (taking silicon vapor deposition as an example). First, open the feed cover 350 to load the raw material 20, and cover the feed cover 350 after the loading is completed. Secondly, open the second gas valve 720 to connect the bypass pipe 710 with the third tube body 810, open the third gas valve 820, start the vacuum pump group to make the first cavity 111 and the second cavity 112 reach the vacuum required for vapor deposition, and close the second gas valve 720 and the third gas valve 820. Then, the reaction chamber 300 reacts, that is, the first cavity 111 is heated. When the temperature reaches 1300°C or above, the raw material 20 in the crucible 320 is heated to generate silicon vapor, and the air pressure in the crucible 320 and the air pressure in the second cavity 112 are increased. When the first measuring piece 910 and the second measuring piece 920 detect that there is a pressure difference between the first cavity 111 and the second cavity 112, data can be collected through the local PNC for automatic control. Specifically, the air inlet valve can be opened, and the first cavity 111 can be filled with inert gas (argon) through the gas flow meter, so that the air pressure of the first cavity 111 is slightly higher than the air pressure of the second cavity 112, that is, the silicon vapor in the reaction chamber 300 can be forced to flow to the deposition chamber 400 through the second tube 600, and the silicon vapor in the reaction chamber 300 can be prevented from backflowing or scattering, so that the silicon vapor is fully deposited on the deposition cylinder 420. That is, this solution can solve the problem that the crucible cover cannot be sealed at high temperature (about 1300°C), improve the collection rate of silicon vapor by the deposition cylinder 420 (the collection rate of the existing deposition furnace 10 is 80%~85%, and the collection rate of the deposition furnace 10 of this solution reaches 95%~97%), and prevent silicon vapor from leaking from the gap between the crucible 320 and the crucible cover to corrode the heating element 330 and the insulation shell 310.

[0064] It should be noted that if the embodiments of the present invention involve directional indications (such as up, down, left, right, front, back, etc.), the directional indications are only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture. If the specific posture changes, the directional indication will also change accordingly.

[0065] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present invention, the descriptions of "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of technical features indicated. Therefore, the features limited to "first" and "second" may explicitly or implicitly include at least one of the features. In addition, if "and / or", "and / or" or "and / or" appears in the full text, its meaning includes three parallel schemes. Taking "A and / or B" as an example, it includes scheme A, or scheme B, or a scheme that satisfies both A and B. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in the field to implement. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0066] The above are only preferred embodiments of the present invention, and are not intended to limit the patent scope of the present invention. All equivalent structural changes made using the contents of the present invention's specification and drawings, or directly / indirectly applied in other related technical fields, are included in the patent protection scope of the present invention.

Claims

1. A deposition furnace, characterized in that include: A housing defines a cavity; A partition plate is disposed in the cavity and divides the cavity into a first cavity and a second cavity, the partition plate is connected to the inner peripheral wall surface of the shell and is arranged integrally with the shell; A reaction chamber, located in the first chamber, and used to generate deposition gas; A deposition chamber, located in the second chamber, the deposition chamber is connected to the second chamber and the reaction chamber; a pressurizing part, comprising a first tube body located outside the shell, the first tube body being connected to the first cavity, the first tube body being adapted to transport an inert gas to the first cavity, so that the gas pressure of the first cavity is higher than the gas pressure of the second cavity, thereby forcing the deposition gas to flow from the reaction chamber to the deposition chamber; A second tube body is located in the shell, one end of the second tube body is connected to the reaction chamber, and the other end of the second tube body is connected to the deposition chamber; A first measuring member, used to measure the air pressure of the first cavity; The second measuring member is used to measure the air pressure of the second cavity.

2. The deposition furnace according to claim 1, characterized in that The pressurizing part includes a first air valve located outside the shell, and the first air valve is used to control the on-off of the first tube.

3. The deposition furnace according to claim 1, characterized in that The deposition furnace includes a bypass pipe and a second gas valve located outside the shell, one end of the bypass pipe is connected to the first cavity, and the other end is connected to the second cavity, and the second gas valve is used to control the on-off of the bypass pipe.

4. The deposition furnace according to claim 3, characterized in that The deposition furnace comprises a third tube body and a third gas valve located outside the shell, the third tube body is connected to the second cavity and the bypass pipe, and the third gas valve is used to control the on-off of the second tube body.

5. The deposition furnace according to claim 1, characterized in that The reaction chamber comprises a heat-insulating shell, a crucible and a heating element. The heat-insulating shell defines a reaction chamber, and the crucible and the heating element are arranged in the reaction chamber.

6. The deposition furnace according to claim 1, characterized in that The deposition bin comprises a deposition shell and a deposition cylinder, the deposition shell defines a deposition cavity, the deposition cylinder is disposed in the deposition shell, and the deposition shell comprises an opening communicating with the deposition cavity.

7. A deposition method, characterized in that Using the deposition furnace according to any one of claims 1 to 6, the deposition method comprises the following steps: Connecting the first cavity and the second cavity, and evacuating the first cavity and the second cavity; separating the first cavity from the second cavity; The gas pressure of the first chamber is made higher than the gas pressure of the second chamber, so that the deposition gas flows from the reaction chamber to the deposition chamber.

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