Anti-carbon deposition spheroidizing furnace for production of electronic grade submicron spherical silicon powder

Abstract

The present invention relates to the technical field of spherical silicon micropowder production, and specifically, to an anti-carbon deposition spheroidizing furnace for the production of electronic-grade submicron spherical silicon micropowder. The furnace comprises a lifting mechanism, a spheroidizing mechanism and a collecting mechanism. The lifting mechanism is lifted and connected to the upper surface of the spheroidizing mechanism. The spheroidizing mechanism comprises a melting group, a quantitative guiding group, an induced draft group and an adjusting group. The upper surface of the melting group is synchronously lifted and connected to the lifting mechanism. Connecting rods are connected to both sides of the lower surface of the melting group. The quantitative guiding group is lifted and contacted with the lower surface of the melting group through the connecting rods. The upper surface of the induced draft group is lifted and contacted with the quantitative guiding group. Blocks are connected around the surface of the induced draft group. Telescopic springs are connected around the surface of the adjusting group. The adjusting group is lifted and moved by the block, driving the telescopic spring to stretch, so that the adjusting group is expanded around the lower surface of the induced draft group. The opening and closing plate corresponds to the position of the spheroidizing hole. After the opening and closing plate is opened, the spheroidized silicon micropowder after melting and cooling can be dropped into the discharge pipe and finally stored in the recovery barrel.

Description

Technical Field

[0001] The invention relates to the technical field of spherical silicon micropowder production, in particular to a carbon deposition-proof spheroidizing furnace used for producing electronic-grade submicron spherical silicon micropowder. Background Art

[0002] With the rapid development of science and technology and the continuous transformation of industrial structure, the demand for new materials is growing. As a new type of inorganic non-metallic material, spherical silicon micropowder has broad application prospects in the fields of aviation, aerospace, fine chemicals, special ceramics and large-scale integrated circuits due to its unique physical and chemical properties. However, in the production process of spherical silicon micropowder, the performance of the spheroidizing furnace directly affects the quality and production efficiency of the product. Therefore, the development of an efficient anti-carbon deposition spheroidizing furnace is of great significance to improving the production process of spherical silicon micropowder.

[0003] Most of the existing anti-carbon deposition spheroidizing furnaces for the production of spherical silicon micropowder use oxygen and gas spray guns to perform high-temperature melting technology on silicon micropowder. The high-temperature melting and heating of silicon micropowder will produce other substances, resulting in a large amount of carbon deposits accumulating inside the spheroidizing furnace. In addition, there are not many processes for the dosage and guidance of silicon micropowder, which easily leads to the accumulation of silicon micropowder inside the spheroidizing furnace. During the melting and heating process, a large amount of carbon deposits will be produced and accumulated inside the spheroidizing furnace, affecting the production of spheroidized silicon micropowder in the spheroidizing furnace.

[0004] Therefore, there is an urgent need for an anti-carbon deposition spheroidizing furnace for the production of electronic-grade submicron spherical silicon powder to solve the problems of the prior art. Summary of the invention

[0005] The object of the present invention is to provide a carbon deposition-proof spheroidizing furnace for producing electronic-grade submicron spherical silicon powder, so as to solve the problems raised in the above-mentioned background technology.

[0006] To achieve the above-mentioned purpose, the present invention aims to provide an anti-carbon deposition spheroidizing furnace for the production of electronic-grade submicron spherical silicon powder, comprising a lifting mechanism, a spheroidizing mechanism and a collecting mechanism. The lifting mechanism is lifted and connected to the upper surface of the spheroidizing mechanism. The spheroidizing mechanism comprises a melting group, a quantitative guiding group, an induced draft group and an adjusting group. The upper surface of the melting group is synchronously lifted and connected with the lifting mechanism. Connecting rods are connected on both sides of the lower surface of the melting group. The quantitative guiding group is in lifting and contacting contact with the lower surface of the melting group through the connecting rods. The upper surface of the induced draft group is in lifting and sleeve contact with the quantitative guiding group. Blocks are connected around the surface of the induced draft group. Telescopic springs are connected around the surface of the adjusting group. The adjusting group moves up and down through the block, driving the telescopic spring to stretch, so that the adjusting group is spread out around the lower surface of the induced draft group.

[0007] As a further improvement of the present technical solution, the lifting mechanism includes a furnace cover, a lifting sleeve column is installed at the center position of the upper surface of the furnace cover, a mounting plate is installed on the upper surface of the lifting sleeve column, a cylinder is installed at the center position of the upper surface of the mounting plate, telescopic rods are connected around the surface of the mounting plate, and a kit is installed around the surface of the furnace cover. The furnace cover is lifted and lowered on the lower surface of the mounting plate by the lifting sleeve column and the cylinder, and the lower surface of the telescopic rod is lifted and lowered correspondingly to the upper surface of the kit.

[0008] As a further improvement of the present technical solution, the melting group includes a protective shell, an electron gun is installed on the inner upper surface of the protective shell, an electron beam is installed on the lower surface of the electron gun, feed ports are opened on the left and right sides of the surface of the protective shell, air inlets are opened on the front and back sides of the surface of the protective shell, the upper surface of the electron gun is correspondingly connected to the lower surface of the furnace cover, and the electron beam and the furnace cover are raised and lowered and adjusted at the center position inside the protective shell.

[0009] As a further improvement of the present technical solution, the quantitative guide group includes a material guide barrel, an adjusting block is installed on the inner top of the material guide barrel, push rods are connected to both sides of the lower surface of the adjusting block, elastic springs are installed on the lower surface of the push rods, and a connecting rod is connected to the upper surface of the elastic spring. The left and right sides of the outer surface of the material guide barrel are connected to material guide pipes, one side of the surface of the material guide pipe is connected to the surface position of the feed port correspondingly, and the adjusting block is raised and lowered and adjusted inside the material guide barrel through the push rods and the elastic spring.

[0010] As a further improvement of the present technical solution, the induced draft group includes an air guide barrel, a docking block is installed on the top of the inner side of the air guide barrel, card slots are opened around the lower surface of the docking block, an induced draft duct is connected to the center position of the docking block surface, material air ducts are installed on the front and rear sides of the inner wall of the air guide barrel, a spheroidizing disk is installed on the surface of the material air duct, a material guide trough is arranged around the upper surface of the spheroidizing disk, a baffle is installed on one side of the upper surface of the material guide trough, a material guide plate is installed on one side inside the material guide trough, an inclined plate is arranged on one side of the surface of the material guide plate, spheroidizing holes are opened around the surface of the spheroidizing disk, a sleeve is sleeved on the lower surface of the air guide barrel, and the front and rear sides of the outer surface of the sleeve are connected to the air inlet correspondingly, and the docking block contacts the material guide barrel through the lifting and lowering of the material guide barrel, thereby driving the induced draft duct to be connected with the air inlet through the lifting and lowering of the material guide barrel.

[0011] As a further improvement of the present technical solution, the adjustment group includes an opening and closing plate, which is movably installed around the lower surface of the spheroidizing disk, one side of the surface of the opening and closing plate is connected to a telescopic spring, one side of the surface of the telescopic spring is connected to a clamping block, the lower surface of the opening and closing plate is connected to a discharge pipe, the upper surface of the opening and closing plate is clamped corresponding to the position of the lower surface of the spheroidizing hole, and the opening and closing plate can telescope around the lower surface of the spheroidizing disk through the telescopic spring and the clamping block.

[0012] As a further improvement of the technical solution, the collection mechanism includes a fixed base, and a recovery bucket is installed at the center position of the upper surface of the fixed base.

[0013] As a further improvement of the present technical solution, the clamping block is movably connected around the inner wall of the air guide barrel, the docking block moves up and down inside the air guide barrel, the clamping slot is movably connected to the clamping block, so that the opening and closing plate is separated from the spheroidizing hole, and the spheroidizing hole is connected to the discharge pipe accordingly.

[0014] As a further improvement of the present technical solution, the material guide plates are evenly distributed on one side of the material guide trough, the material air duct corresponds to the surface of the material guide plate, and one side of the inclined plate surface corresponds to the position of the material guide plate, and one side of the inclined plate surface corresponds to the spheroidizing hole.

[0015] Compared with the prior art, the present invention has the following beneficial effects:

[0016] 1. In the crushing equipment for silicon micropowder production, the electron beam moves up and down on the lower surface of the furnace cover, generating an extrusion force on the connecting rod. Under the action of the elastic spring, the top rod generates an upward thrust on the adjusting block, thereby allowing the feed pipe to be connected with the inside of the feed guide barrel, thereby achieving a quantitative effect of feeding silicon micropowder and avoiding excessive feeding of silicon micropowder, which causes a waste of resources.

[0017] 2. In the crushing equipment for silicon micropowder production, after the silicon micropowder is sent to the inside of the material guide barrel, the material guide barrel continues to move downward under the pressure of the connecting rod, so that the inner bottom of the material guide barrel contacts the upper surface of the docking block, and the docking block is squeezed downward at the same time, so that the induced draft duct and the casing are effectively connected to each other. Since the casing is connected to the air inlet, the wind force can be transmitted to the induced draft duct. Under the action of the wind force, the silicon micropowder accumulated in the material guide barrel is blown. Since the material air duct is connected to the material guide barrel, the silicon micropowder can be blown into the material air duct and transmitted to the inside of the material guide trough.

[0018] 3. In the crushing equipment for silicon micropowder production, silicon micropowder is blown to the guide trough position, and the guide plate is rotated under the action of wind. Since the position of the guide plate corresponds to that of the inclined plate, the silicon micropowder can be conducted to the surface of the inclined plate through the guide plate, and finally the silicon micropowder is moved to the inside of the spheroidizing hole through the inclined plate. The spheroidizing hole corresponds to the position of the electron beam, so the electron beam can be operated to directly heat and melt the silicon micropowder inside the spheroidizing hole.

[0019] 4. In the crushing equipment for silicon micropowder production, the silicon micropowder inside the spheroidizing hole is heated and melted, and then cooled into a spherical shape. When the docking block is pressed down, the slot is correspondingly engaged with the block. After the docking block is not squeezed, it rebounds upward, which can drive the block to move upward. Because one side of the block surface is connected to the telescopic spring, the opening and closing plate can be contracted to the center position under the action of tension, and the opening and closing plate corresponds to the position of the spheroidizing hole. After the opening and closing plate is opened, the molten and cooled spheroidized silicon micropowder can fall into the discharge pipe and finally stored in the recovery barrel. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1It is a schematic diagram of the overall structure of the present invention;

[0021] Figure 2 It is a schematic diagram of the connection structure of the material guide barrel, the air guide barrel and the spheroidizing disk of the present invention;

[0022] Figure 3 It is a schematic diagram of the connection structure between the adjustment block and the push rod of the present invention;

[0023] Figure 4 for Figure 3 A schematic diagram of the enlarged structure at A in the middle;

[0024] Figure 5 It is a schematic diagram of the connection structure of the guide trough, the inclined plate and the spheroidizing hole of the present invention;

[0025] Figure 6 It is a schematic diagram of the connection structure between the electron beam and the spheroidizing hole of the present invention;

[0026] Figure 7 for Figure 6 A schematic diagram of the enlarged structure at B in the middle;

[0027] Figure 8 It is a schematic diagram of the connection structure between the opening and closing plate and the telescopic spring of the present invention;

[0028] Fig. 9 It is a schematic diagram of the connection structure of the opening and closing plate and the inclined plate of the present invention.

[0029] The meaning of each number in the figure is:

[0030] Lifting mechanism; 101, furnace cover; 102, lifting sleeve column; 103, mounting plate; 104, cylinder; 105, telescopic rod; 106, kit;

[0031] Spheroidizing mechanism; 201, protective shell; 202, feed port; 203, air inlet; 204, electron beam; 205, material guide barrel; 206, air guide barrel; 207, spheroidizing disk; 208, baffle; 209, material guide pipe; 210, adjusting block; 211, ejector rod; 212, elastic spring; 213, connecting rod; 214, docking block; 215, card slot; 216, air guide pipe; 217, card block; 218, sleeve; 219, material guide slot; 220, inclined plate; 221, spheroidizing hole; 222, material air pipe; 223, material guide plate; 224, opening and closing plate; 225, telescopic spring; 226, material discharge pipe; 227, electron gun;

[0032] 300. Collection mechanism; 301. Fixed base; 302. Recovery bin. DETAILED DESCRIPTION

[0033] The following will be combined with the accompanying drawings in the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0034] See also Figure 1 - Fig. 9 As shown, the purpose of this embodiment is to provide an anti-carbon deposition spheroidizing furnace for the production of electronic-grade submicron spherical silicon powder, including a lifting mechanism 100, a spheroidizing mechanism 200 and a collecting mechanism 300. The lifting mechanism 100 is lifted and connected to the upper surface of the spheroidizing mechanism 200. The spheroidizing mechanism 200 includes a melting group, a quantitative guiding group, an induced draft group and an adjusting group. The upper surface of the melting group is synchronously lifted and connected with the lifting mechanism 100. Connecting rods 213 are connected to both sides of the lower surface of the melting group. The quantitative guiding group is in lifting and contacting contact with the lower surface of the melting group through the connecting rods 213. The upper surface of the induced draft group is in lifting and sleeve contact with the quantitative guiding group. Blocks 217 are connected around the surface of the induced draft group. Telescopic springs 225 are connected around the surface of the adjusting group. The adjusting group moves up and down through the block 217, driving the telescopic spring 225 to stretch, so that the adjusting group is spread out around the lower surface of the induced draft group.

[0035] The lifting mechanism 100 can seal the spheroidizing furnace and provide a certain degree of protection for the spheroidizing process of silicon micropowder. At the same time, the melting group can also be lifted and lowered as a whole to facilitate the spheroidizing process of silicon micropowder. When the melting group is lifted and lowered, the connecting rod 213 can adjust the quantitative guide group to transfer the silicon micropowder to the inside of the spheroidizing mechanism 200, so as to achieve the effect of quantitative spheroidizing the silicon micropowder, avoid incomplete spheroidization of a large amount of silicon micropowder during the melting process, resulting in a waste of silicon micropowder resources, and transfer a certain amount of silicon micropowder to the melting position through the induced draft group. Finally, after the spheroidization of the silicon micropowder is completed, the adjustment group is effectively opened under the stretching action of the block 217 and the telescopic spring 225, and the cooled spheroidized silicon micropowder falls from the melting position and is finally concentrated in the collecting mechanism 300.

[0036] Considering the need to realize the lifting function of the lifting mechanism 100, in this embodiment, the lifting mechanism 100 includes a furnace cover 101, a lifting sleeve column 102 is installed at the center of the upper surface of the furnace cover 101, a mounting plate 103 is installed on the upper surface of the lifting sleeve column 102, a cylinder 104 is installed at the center of the upper surface of the mounting plate 103, telescopic rods 105 are connected around the surface of the mounting plate 103, and a set 106 is installed around the surface of the furnace cover 101. The furnace cover 101 is lifted and lowered on the lower surface of the mounting plate 103 by the lifting sleeve column 102 and the cylinder 104, and the lower surface of the telescopic rod 105 is correspondingly lifted and sleeved with the upper surface of the set 106;

[0037] Further, the cylinder 104 is started to make the lifting sleeve 102 and the telescopic rod 105 telescopically move, and the telescopic rod 105 can drive the furnace cover 101 to be lifted and lowered on the upper surface of the spheroidizing mechanism 200. After the furnace cover 101 and the spheroidizing mechanism 200 are sealed and clamped, the set lifting sleeve 102 can effectively allow the equipment installed at the bottom of the inner side of the furnace cover 101 to continue to be lifted and lowered, and other components inside the spheroidizing mechanism 200 are adjusted to achieve a quantitative guiding effect on the silicon powder;

[0038] The improvement lies in that the cylinder 104 can play a role in sealing and adjusting the furnace cover 101 and the spheroidizing mechanism 200 to ensure the normal spheroidization of silicon micropowder, and the set 106 also ensures the precise docking of the furnace cover 101 and the spheroidizing mechanism 200.

[0039] Taking into account the need to achieve the processing function of the melting group, in this embodiment, the melting group includes a protective shell 201, an electron gun 227 is installed on the inner upper surface of the protective shell 201, an electron beam 204 is installed on the lower surface of the electron gun 227, feed ports 202 are opened on the left and right sides of the surface of the protective shell 201, air inlets 203 are opened on the front and back sides of the surface of the protective shell 201, the upper surface of the electron gun 227 is connected to the lower surface of the furnace cover 101, and the electron beam 204 and the furnace cover 101 are raised and lowered and adjusted at the center position inside the protective shell 201.

[0040] Further, the electron gun 227 is started to make the electron beam 204 perform laser melting technology on the silicon micropowder. At the same time, the lifting mechanism 100 can adjust the height of the electron beam 204. After the silicon micropowder is introduced into the spheroidizing mechanism 200 and the electron beam 204 corresponds to the silicon micropowder, the electron beam 204 can perform laser melting and heating on the silicon micropowder.

[0041] The improvement lies in that the electron beam 204 laser melting technology for silicon micropowder replaces the oxygen and gas spray gun high temperature melting technology for silicon micropowder, avoiding the generation of other substances and causing carbon deposition.

[0042] Taking into account the need to achieve the quantitative guiding function of the quantitative guiding group, in this embodiment, the quantitative guiding group includes a material guide barrel 205, an adjusting block 210 is installed on the inner top of the material guide barrel 205, and both sides of the lower surface of the adjusting block 210 are connected with push rods 211, and the lower surface of the push rod 211 is installed with an elastic spring 212, and the upper surface of the elastic spring 212 is connected with a connecting rod 213, and the left and right sides of the outer surface of the material guide barrel 205 are connected with a material guide pipe 209, one side of the surface of the material guide pipe 209 is connected to the surface position of the feed port 202, and the adjusting block 210 is adjusted to rise and fall inside the material guide barrel 205 through the push rod 211 and the elastic spring 212.

[0043] Furthermore, after the electron beam 204 descends, one side of the connecting rod 213 contacts the elastic spring 212, generating downward pressure on one end of the push rod 211, thereby causing the other end of the push rod 211 to generate an upward thrust, and push the adjustment block 210 to move at the top of the inner side of the material guide barrel 205, so that the guide pipe 209 is connected to the inside of the material guide barrel 205, and the silicon micropowder is transmitted to the inside of the material guide barrel 205, thereby achieving the effect of quantitatively guiding the silicon micropowder;

[0044] The improvement lies in that the elastic spring 212 is squeezed downward by the connecting rod 213, so that the push rod 211 lifts the lower end of the adjusting block 210, so that the silicon micropowder transmitted by the guide pipe 209 is quantitatively transmitted to the inside of the guide barrel 205, and the silicon micropowder is effectively quantitatively transmitted and accumulated inside the guide barrel 205. When the induced draft group is running, the silicon micropowder inside the guide barrel 205 can be transmitted.

[0045] Considering the need to realize the air induction function of the air induction group, in this embodiment, the air induction group includes an air guide barrel 206, a docking block 214 is installed on the top of the inner side of the air guide barrel 206, a card slot 215 is opened around the lower surface of the docking block 214, an air induction pipe 216 is connected to the center of the surface of the docking block 214, and a material air duct 222 is installed on the front and rear sides of the inner wall of the air guide barrel 206. A spheroidizing disk 207 is installed on the surface of the material air duct 222, and a material guide groove 219 is arranged around the upper surface of the spheroidizing disk 207. A baffle 208 is installed on one side of the upper surface of the material trough 219, a material guide plate 223 is installed on one side of the inner side of the material guide trough 219, an inclined plate 220 is arranged on one side of the surface of the material guide plate 223, spheroidizing holes 221 are opened around the surface of the spheroidizing disk 207, a sleeve 218 is sleeved on the lower surface of the air guide barrel 206, and the front and rear sides of the outer surface of the sleeve 218 are connected to the air inlet 203 correspondingly, and the docking block 214 is raised and lowered through the material guide barrel 205, driving the air duct 216 to be raised and lowered and connected with the air inlet 203;

[0046] Furthermore, the lower surface of the top rod 211 contacts the upper surface of the docking block 214 and is squeezed synchronously, so that the docking block 214 moves up and down inside the air guide barrel 206, so that the bottom of the air duct 216 is connected to the sleeve 218 correspondingly. Since the bottom of the sleeve 218 is connected to the air inlet 203, and the surface of the air inlet 203 is connected to the fan, the wind energy generated by the fan can be introduced into the position of the air duct 216 to blow the silicon micropowder accumulated inside the guide barrel 205, and the material air duct 222 is connected to the guide barrel. 205 are connected, the silicon micropowder can be blown into the material air duct 222 by wind energy, and the silicon micropowder is transmitted to the position of the material guide trough 219 through the material air duct 222. Finally, under the action of wind energy, the material guide plate 223 is rotated to guide the silicon micropowder in the material guide trough 219 to the surface of the inclined plate 220, and the silicon micropowder on the surface of the inclined plate 220 rolls into the spheroidizing hole 221, and finally, the electron beam 204 is activated to melt and heat the silicon micropowder accumulated in the spheroidizing hole 221 to generate spheroidized silicon micropowder;

[0047] The improvement lies in that: under the action of downward pressure, the material guide barrel 205 and the air guide barrel 206 are effectively connected to each other, and the silicon micropowder is transmitted to the position of the material guide groove 219 through the action of wind energy. Finally, the silicon micropowder is introduced into the spheroidizing hole 221 through the inclined plate 220, and the silicon micropowder is melted and heated by the electron beam 204, and spheroidized silicon micropowder is formed after cooling.

[0048] Taking into account the need to realize the regulating function of the regulating group, in this embodiment, the regulating group includes an opening and closing plate 224, which is movably installed around the lower surface of the spheroidizing disk 207, and a telescopic spring 225 is connected to one side of the surface of the opening and closing plate 224, and a clamping block 217 is connected to one side of the surface of the telescopic spring 225. The lower surface of the opening and closing plate 224 is connected to a discharge pipe 226, and the upper surface of the opening and closing plate 224 is clamped corresponding to the position of the lower surface of the spheroidizing hole 221, and the opening and closing plate 224 telescopically moves around the lower surface of the spheroidizing disk 207 through the telescopic spring 225 and the clamping block 217.

[0049] Furthermore, when the docking block 214 moves downward, the slot 215 opened at the bottom contacts and engages with the upper surface of the block 217. When the silicon micropowder accumulated inside the spheroidizing hole 221 is melted and heated, and spheroidized silicon micropowder is formed after cooling, the electron beam 204 moves upward as a whole. Without the effect of the squeezing force, the docking block 214 moves upward, and the block 217 is driven to move upward synchronously. Since one end of the block 217 is connected to the telescopic spring 225, the opening and closing plate 224 can be contracted to one side under the effect of the tension, and the surface of the opening and closing plate 224 is in contact with the spheroidizing hole 221. The bottom of the spheroidizing hole 221 can be opened corresponding to the position, and the spheroidizing silicon powder cooled inside the spheroidizing hole 221 can fall into the discharge pipe 226. The block 217 is U-shaped, and the top of the block 217 is movable. An iron-absorbing block is arranged inside the slot 215, and the block 217 can be adsorbed by the iron-absorbing block. When the block 217 is subjected to the maximum pulling force, the block 217 can be separated from the iron-absorbing block. The block 217 is L-shaped as a whole, and then separated from the slot 215. The opening and closing plate 224 then rebounds to the position of the spheroidizing hole 221 to seal the spheroidizing hole 221 again.

[0050] The improvement lies in that the U-shaped block 217 can be flexibly connected with the slot 215 to adjust the contraction of the opening and closing plate 224, effectively allowing the bottom of the opening and closing plate 224 to correspond to the spheroidizing hole 221, and transmitting the spheroidized silicon powder cooled inside the spheroidizing hole 221.

[0051] Considering the need to realize the collection function of the collection mechanism 300, in this embodiment, the collection mechanism 300 includes a fixed base 301, and a recovery bucket 302 is installed at the center position of the upper surface of the fixed base 301, and the upper surface of the recovery bucket 302 is correspondingly connected to the discharge pipe 226.

[0052] Furthermore, the spheroidized silicon powder transmitted by the discharge pipe 226 can directly fall into the recovery barrel 302 .

[0053] The improvement lies in that the cooled spheroidized silicon micropowder is directly recovered, which makes it easier for the staff to collect and process the spheroidized silicon micropowder in a centralized manner.

[0054] In summary, the working principle of this scheme is as follows: pour silicon micropowder from the feed port 202, start the cylinder 104, let the lifting sleeve 102 and the telescopic rod 105 drive the furnace cover 101 to move on the upper surface of the protective shell 201, seal the protective shell 201, and also synchronously lift and adjust the position of the electron beam 204. When the electron beam 204 moves up and down on the lower surface of the furnace cover 101, it generates an extrusion force on the connecting rod 213. Under the action of the elastic spring 212, the push rod 211 generates an upward thrust on the adjusting block 210, thereby allowing the guide tube 209 to be connected with the inside of the guide barrel 205, so as to achieve the effect of pressing the silicon micropowder. The quantitative effect of powder feeding can avoid excessive feeding of silicon micropowder and waste of resources. After the silicon micropowder is fed into the guide barrel 205, the guide barrel 205 continues to move downward under the pressure of the connecting rod 213, so that the inner bottom of the guide barrel 205 contacts the upper surface of the docking block 214, and the docking block 214 is pressed downward to effectively connect the air duct 216 with the sleeve 218. Since the sleeve 218 is connected with the air inlet 203, the wind can be transmitted to the air duct 216. Under the action of the wind, the silicon micropowder accumulated in the guide barrel 205 is blown. The material barrel 205 is connected, and the silicon micropowder can be blown into the material air duct 222 and transmitted to the material guide trough 219. The silicon micropowder is blown to the position of the material guide trough 219. Under the action of wind, the material guide plate 223 rotates. Since the position of the material guide plate 223 corresponds to the inclined plate 220, the silicon micropowder can be conducted to the surface of the inclined plate 220 through the material guide plate 223. Finally, the silicon micropowder is moved to the inside of the spheroidizing hole 221 through the inclined plate 220. The spheroidizing hole 221 corresponds to the position of the electron beam 204, so the electron beam 204 can be operated to directly heat and melt the silicon micropowder in the spheroidizing hole 221, and the spheroidizing hole 221 is heated and melted. After the silicon micropowder inside the spheroidizing hole 221 is heated and melted, and then cooled into a spherical shape, when the docking block 214 is pressed down, the opened slot 215 is correspondingly engaged with the block 217. After the docking block 214 is not squeezed, it rebounds upward, which can drive the block 217 to move upward. Because one side of the surface of the block 217 is connected to the telescopic spring 225, the opening and closing plate 224 can be contracted to the center position under the action of tension, and the opening and closing plate 224 corresponds to the position of the spheroidizing hole 221. After the opening and closing plate 224 is opened, the molten and cooled spheroidized silicon micropowder can fall into the discharge pipe 226 and finally stored in the recovery barrel 302.

[0055] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited by the above embodiments. The above embodiments and descriptions are only preferred examples of the present invention and are not intended to limit the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention. The scope of protection of the present invention is defined by the attached claims and their equivalents.

Claims

1. Anti-carbon deposition spheroidizing furnace for the production of electronic grade submicron spherical silicon powder, characterized by: The invention comprises a lifting mechanism (100), a spheroidizing mechanism (200) and a collecting mechanism (300), wherein the lifting mechanism (100) is connected to the upper surface of the spheroidizing mechanism (200) in a lifting manner, and the spheroidizing mechanism (200) comprises a melting group, a quantitative guiding group, an air induction group and an adjusting group, wherein the upper surface of the melting group is synchronously connected to the lifting mechanism (100), and connecting rods (213) are connected to both sides of the lower surface of the melting group, and the quantitative guiding group is in lifting contact with the lower surface of the melting group through the connecting rods (213), and the upper surface of the air induction group is in lifting sleeve contact with the quantitative guiding group, and the surface of the air induction group is connected to blocks (217) at all sides, and the surface of the adjusting group is connected to telescopic springs (225) at all sides, and the adjusting group moves up and down through the blocks (217), thereby driving the telescopic springs (225) to stretch, so that the adjusting group is spread out around the lower surface of the air induction group; The lifting mechanism (100) comprises a furnace cover (101), a lifting column (102) is installed at the center of the upper surface of the furnace cover (101), a mounting plate (103) is installed on the upper surface of the lifting column (102), a cylinder (104) is installed at the center of the upper surface of the mounting plate (103), telescopic rods (105) are connected around the surface of the mounting plate (103), and a set (106) is installed around the surface of the furnace cover (101); the furnace cover (101) is lifted and lowered on the lower surface of the mounting plate (103) by the lifting column (102) and the cylinder (104), and the lower surface of the telescopic rod (105) is lifted and lowered correspondingly to the upper surface of the set (106); The melting group comprises a protective shell (201), an electron gun (227) is mounted on the inner upper surface of the protective shell (201), an electron beam (204) is mounted on the lower surface of the electron gun (227), a material feed port (202) is provided on the left and right sides of the surface of the protective shell (201), an air inlet (203) is provided on the front and rear sides of the surface of the protective shell (201), the upper surface of the electron gun (227) is connected to the lower surface of the furnace cover (101) correspondingly, and the electron beam (204) and the furnace cover (101) are raised and lowered and adjusted at the center position inside the protective shell (201); The quantitative guide group comprises a material guide barrel (205), an adjustment block (210) is installed on the top of the inner side of the material guide barrel (205), both sides of the lower surface of the adjustment block (210) are connected with push rods (211), the lower surface of the push rod (211) is installed with an elastic spring (212), the upper surface of the elastic spring (212) is connected with a connecting rod (213), the left and right sides of the outer surface of the material guide barrel (205) are connected with a material guide tube (209), one side of the surface of the material guide tube (209) is connected to the surface position of the feed port (202), and the adjustment block (210) is raised and lowered and adjusted inside the material guide barrel (205) through the push rod (211) and the elastic spring (212); The air induction group comprises an air guide barrel (206), a docking block (214) is installed on the top of the inner side of the air guide barrel (206), a clamping groove (215) is provided around the lower surface of the docking block (214), an air induction pipe (216) is connected to the center of the surface of the docking block (214), a material air pipe (222) is installed on the front and rear sides of the inner wall of the air guide barrel (206), a spheroidizing disk (207) is installed on the surface of the material air pipe (222), a material guide groove (219) is provided around the upper surface of the spheroidizing disk (207), and a baffle is installed on one side of the upper surface of the material guide groove (219). (208), a material guide plate (223) is installed on one side of the inner part of the material guide groove (219), an inclined plate (220) is arranged on one side of the surface of the material guide plate (223), spheroidizing holes (221) are arranged around the surface of the spheroidizing plate (207), a sleeve (218) is sleeved on the lower surface of the air guide barrel (206), and the front and rear sides of the outer surface of the sleeve (218) are connected to the air inlet (203) correspondingly, and the docking block (214) is raised and lowered to contact with the material guide barrel (205), thereby driving the air duct (216) to be raised and lowered to communicate with the air inlet (203); The adjustment group comprises an opening and closing plate (224), the opening and closing plate (224) being movably mounted around the lower surface of the spheroidizing disk (207), one side of the surface of the opening and closing plate (224) being connected to a telescopic spring (225), one side of the surface of the telescopic spring (225) being connected to a clamping block (217), the lower surface of the opening and closing plate (224) being connected to a discharge pipe (226), the upper surface of the opening and closing plate (224) being clamped correspondingly to the position of the lower surface of the spheroidizing hole (221), and the opening and closing plate (224) being telescopically movable around the lower surface of the spheroidizing disk (207) via the telescopic spring (225) and the clamping block (217); The material guide plates (223) are evenly distributed on one side inside the material guide groove (219); the material air duct (222) corresponds to the surface of the material guide plate (223); one side of the surface of the inclined plate (220) corresponds to the position of the material guide plate (223); and one side of the surface of the inclined plate (220) corresponds to the spheroidizing hole (221).

2. The anti-carbon deposition spheroidizing furnace for producing electronic-grade submicron spherical silicon powder according to claim 1, characterized in that: The collection mechanism (300) comprises a fixed base (301), and a recovery bucket (302) is installed at the center of the upper surface of the fixed base (301).

3. The anti-carbon deposition spheroidizing furnace for producing electronic-grade submicron spherical silicon powder according to claim 1, characterized in that: The clamping block (217) is movably clamped around the inner wall of the air guide barrel (206), the docking block (214) moves up and down inside the air guide barrel (206), and the clamping groove (215) is movably clamped with the clamping block (217), so that the opening and closing plate (224) and the spheroidizing hole (221) are separated, and the spheroidizing hole (221) and the discharge pipe (226) are correspondingly connected.

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