Process gas nozzle and semiconductor process chamber

Abstract

The present invention discloses a process gas nozzle and a semiconductor process chamber. The disclosed process gas nozzle comprises a nozzle body (21), a first protrusion (22) and an annular portion (23). The nozzle body (21) has a first end (213) and a second end (214). The annular portion (23) is arranged around the second end (214). The first protrusion (22) is arranged on the nozzle body (21) and is located on a side of the annular portion (23) facing the first end (213). The surface (222) of the first protrusion (22) facing away from the annular portion (23) forms a reverse flow guide groove (04) with the nozzle body (21). This solution can solve the problem of poor cleaning effect when cleaning the inner wall of a semiconductor process chamber in the related art.

Description

Technical Field

[0001] The invention belongs to the field of semiconductor technology, and in particular relates to a process gas nozzle and a semiconductor process chamber. Background Art

[0002] During the thin film deposition process of semiconductor process equipment (such as high-density plasma chemical vapor deposition, HDPCVD), process gas is transported into the semiconductor process chamber through the process gas nozzle and participates in the reaction to form deposits. The deposits are not only deposited on the wafer, but also on the inner wall of the semiconductor process chamber. When the deposits are thick on the inner wall of the semiconductor process chamber, they are more likely to fall off, thereby causing particle contamination problems in the semiconductor process chamber.

[0003] Based on this, it is necessary to clean the semiconductor process chamber regularly to remove the deposits deposited on the inner wall of the semiconductor process chamber. However, the related art has the problem of poor cleaning effect when cleaning the deposits on the inner wall of the semiconductor process chamber. Summary of the invention

[0004] The invention discloses a process gas nozzle and a semiconductor process chamber, so as to solve the problem that the cleaning effect is poor when the inner wall of the semiconductor process chamber is cleaned in the related art.

[0005] In order to solve the above technical problems, the present invention provides the following technical solutions:

[0006] In a first aspect, an embodiment of the present invention discloses a process gas nozzle, which comprises a nozzle body, a first protrusion and an annular portion, wherein the nozzle body has a first end and a second end, the annular portion is arranged around the second end, the first protrusion is arranged on the nozzle body and is located on the side of the annular portion facing the first end, and the surface of the first protrusion facing away from the annular portion forms a reverse guide groove with the nozzle body.

[0007] In the second aspect, an embodiment of the present invention discloses a semiconductor process chamber, which includes a chamber shell and the process gas nozzle mentioned above, the chamber shell is provided with a process space and a mounting hole connected to the process space, the first end of the nozzle body is arranged in the mounting hole, and forms an annular air inlet channel with the hole wall of the mounting hole.

[0008] The technical solution adopted by the present invention can achieve the following technical effects:

[0009] The process gas nozzle disclosed in the embodiment of the present invention has further improved its structure by adding a first protrusion to the nozzle body, and making the first protrusion located on the side of the annular portion facing the first end, and making the surface of the first protrusion facing away from the annular portion and the nozzle body form a reverse flow guide groove, which can adjust the flow direction of part of the cleaning gas, so that part of the cleaning gas flows in the opposite direction and rushes to the inner wall of the chamber shell where the air inlet channel is opened, thereby cleaning the deposits on this part of the inner wall. This structure can avoid the problem that the cleaning gas flowing in from the air inlet channel is difficult to flow to the inner wall of the chamber shell where it is located, resulting in poor cleaning effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 is a schematic diagram of the structure of a process gas nozzle disclosed in an embodiment of the present invention;

[0011] Figure 2 yes Figure 1 Top view;

[0012] Figure 3 yes Figure 1 Bottom view of

[0013] Figure 4 is a cross-sectional view of a process gas nozzle disclosed in an embodiment of the present invention, Figure 4 The internal flow path of the nozzle body is not shown;

[0014] Figure 5 is a schematic diagram of a semiconductor process chamber disclosed in an embodiment of the present invention when spraying process gas, Figure 5 The solid arrows in the figure indicate the flow direction of some process gases;

[0015] Figure 6 is a schematic diagram of a semiconductor process chamber disclosed in an embodiment of the present invention when a cleaning gas is introduced; Figure 6 The dashed arrow in the middle indicates the flow direction of part of the cleaning gas;

[0016] Figure 7 is a cross-sectional view of a partial structure of a semiconductor process chamber disclosed in an embodiment of the present invention in one state;

[0017] Figure 8 yes Figure 7 A top view of

[0018] Fig. 9 is a cross-sectional view of a partial structure of a semiconductor process chamber disclosed in an embodiment of the present invention in another state;

[0019] Fig.10 yes Fig. 9 A top view of

[0020] Fig.11is a partial structural schematic diagram of a chamber housing disclosed in an embodiment of the present invention, wherein: Fig.11 The outer circle only indicates the edge of the chamber shell;

[0021] Fig.12 is a schematic diagram of a partial structure of a semiconductor process chamber disclosed in an embodiment of the present invention;

[0022] Fig.13 yes Fig.12 A cross-sectional view of

[0023] Fig.14 is a top view of a partial structure of a semiconductor process chamber disclosed in an embodiment of the present invention;

[0024] Fig.15 is a cross-sectional view of a partial structure of a semiconductor process chamber disclosed in an embodiment of the present invention;

[0025] Fig.16 It is a schematic diagram of the structure of a semiconductor process chamber disclosed in an embodiment of the present invention.

[0026] Description of reference numerals:

[0027] 10-chamber shell, 11-top cover, 111-top cover inner wall, 12-shell body,

[0028] 20-process gas nozzle, 21-nozzle body, 211-first gas outlet, 212-second gas outlet, 213-first end, 214-second end, 22-first protrusion, 221-guiding surface, 222-surface, 23-annular portion, 231-first annular surface, 232-second annular surface, 233-through hole,

[0029] 30- guide plate, 31- articulated shaft,

[0030] 40-driving mechanism, 43-gear, 42-rack, 41-driving member,

[0031] 01-process space, 02-mounting hole, 021-second protrusion, 022-accommodating groove, 03-air inlet channel, 04-reverse guide groove, 05-guide groove, 06-wafer support seat. DETAILED DESCRIPTION

[0032] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the specific embodiments of the present invention and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0033] The technical solutions disclosed in various embodiments of the present invention are described in detail below in conjunction with the accompanying drawings.

[0034] In the semiconductor process chamber involved in the related art, the process gas nozzle will spray process gas into the process space of the semiconductor process chamber, and the process gas will perform a coating process in the process space of the semiconductor process chamber. After the coating process is completed, the process space of the semiconductor process chamber needs to be cleaned, and the semiconductor process chamber is provided with an air inlet channel to introduce cleaning gas into the process space during cleaning. In the process of designing the semiconductor process chamber, the inventor found that after the cleaning gas is introduced into the process space from the air inlet channel at a certain speed, due to the high vacuum of the bottom molecular pump of the semiconductor process chamber, the cleaning gas mainly moves toward the bottom of the semiconductor process chamber after entering the semiconductor process chamber, thereby causing insufficient cleaning gas at the top cover of the chamber and its center, which makes it difficult to clean the deposits here, and ultimately leads to poor cleaning effect of the semiconductor process chamber.

[0035] Please refer to Figures 1 to 16 The embodiment of the present invention discloses a process gas nozzle 20. The disclosed process gas nozzle 20 is used in a semiconductor process chamber to spray process gas into a process space 01 of the semiconductor process chamber when the semiconductor process chamber is performing a process, thereby realizing a coating process. The process gas nozzle 20 disclosed in the embodiment of the present invention includes a nozzle body 21, a first protrusion 22 and an annular portion 23.

[0036] The nozzle body 21 is the main part of the process gas nozzle 20, and the nozzle body 21 has a first end 213 and a second end 214. Among them, the first end 213 is provided with an air inlet, and the second end 214 is provided with an air outlet. The air outlet is connected to the air inlet. In a specific process, the air inlet is connected to the process gas pipeline, and the process gas transported by the process gas pipeline will enter the nozzle body 21 through the air inlet, and can eventually be ejected through the air outlet. It should be noted that the first end 213 of the nozzle body 21 and the second end 214 of the nozzle body 21 are the opposite ends of the nozzle body 21. The process gas mentioned in this article is a coating gas, and the cleaning gas is a gas used to clean deposits.

[0037] In one embodiment, the gas inlet opening may be provided on the end surface of the first end 213. In order to achieve a more uniform injection of the process gas, there may be multiple gas outlet holes, which may be distributed on the peripheral wall of the second end 214 along the circumferential direction of the nozzle body 21.

[0038] The annular portion 23 is arranged around the second end 214, and is used to guide the process gas injected from the second end 214 along the radial direction of the process gas nozzle 20, so that the process gas can at least partially move along the radial direction of the process gas nozzle 20 away from the nozzle body 21, so that the process gas can diffuse as widely as possible in the semiconductor process chamber.

[0039] The first protrusion 22 is disposed on the nozzle body 21. The first protrusion 22 is located on the side of the annular portion 23 facing the first end 213. The first protrusion 22 protrudes from the peripheral wall of the nozzle body 21, and the first protrusion 22 has a surface facing the annular portion 23 and a surface 222 facing away from the annular portion 23.

[0040] In the embodiment of the present invention, the surface 222 of the first protrusion 22 facing away from the annular portion 23 and the nozzle body 21 form a reverse flow guide groove 04. Specifically, the surface 222 of the first protrusion 22 facing away from the annular portion 23 and the peripheral wall of the nozzle body 21 form the reverse flow guide groove 04, and the surface 222 of the first protrusion 22 facing away from the annular portion 23 and a partial area of ​​the peripheral wall of the nozzle body 21 are used to form the inner wall of the reverse flow guide groove 04. The reverse flow guide groove 04 is used to reversely guide the cleaning gas delivered to the semiconductor process chamber.

[0041] During the cleaning process, the cleaning gas is transported to the process space 01 of the semiconductor process chamber through the annular air inlet channel 03, and part of the cleaning gas will enter the reverse flow guide groove 04 during this process. The reverse flow guide groove 04 guides the cleaning gas to flow in a directional manner, and then flows to the center and edge area of ​​the inner wall of the top cover of the semiconductor process chamber, so as to clean this area. Figure 7 shown.

[0042] Through the above working process, it can be known that the process gas nozzle 20 disclosed in the embodiment of the present invention has further improved its structure by adding a first protrusion 22 to the nozzle body 21, and making the first protrusion 22 located on the side of the annular portion 23 facing the first end 213, and making the surface 222 of the first protrusion 22 facing away from the annular portion 23 and the nozzle body 21 form a reverse flow guide groove 04, and the reverse flow guide groove 04 can adjust the flow direction of part of the cleaning gas, so that part of the cleaning gas flows in the opposite direction and rushes to the inner wall of the top cover of the semiconductor process chamber, and then cleans the deposits on this part of the inner wall. This structure can avoid the problem that the cleaning gas flowing in from the air inlet channel 03 is difficult to flow to the inner wall of the top cover of the semiconductor process chamber where it is located, resulting in poor cleaning effect.

[0043] In the embodiment of the present invention, the number of the first protrusion 22 can be one or more, which is not limited in the embodiment of the present invention. As long as the first protrusion 22 described above is added, the reverse guide groove 04 can be formed, thereby enhancing the cleaning effect.

[0044] Since the air inlet channel 03 is an annular structure, in order to more effectively clean the area of ​​the inner wall of the semiconductor process chamber where the air inlet channel 03 is opened, in one embodiment, there can be multiple first protrusions 22, and the multiple first protrusions 22 can be distributed on the nozzle body 21 at intervals along the circumference of the nozzle body 21. In this structure, the multiple first protrusions 22 can form multiple reverse flow guide grooves 04 with different areas of the circumferential wall of the nozzle body 21, and the multiple reverse flow guide grooves 04 can act at multiple locations in the circumferential direction of the air inlet channel 03, thereby adjusting the flow direction of the cleaning gas entering through the annular air inlet channel 03 in a more comprehensive manner, so that the cleaning gas with the adjusted flow direction can be cleaned in a more comprehensive manner.

[0045] Furthermore, in order to achieve more uniform reverse regulation, multiple first protrusions 22 can be evenly distributed in the circumference of the nozzle body 21, and the width of each first protrusion 22 along the circumference of the nozzle body 21 is equal. The angle occupied by each first protrusion 22 in the circumference of the nozzle body 21 can be 5-25°. In this case, the space occupied by each first protrusion 22 in the circumference of the nozzle body 21 is consistent, so that the amount of cleaning gas adjusted by each first protrusion 22 is consistent, so that the reverse regulation of the cleaning gas is more consistent.

[0046] In another embodiment, the first protrusion 22 may be an annular structure and is disposed on the nozzle body 21 along the circumference of the nozzle body 21. The first protrusion 22 of this structure can form an annular reverse flow guide groove 04 with the nozzle body 21, and the annular reverse flow guide groove 04 can adjust the flow direction in a more all-round manner to achieve a better cleaning effect.

[0047] In the embodiment of the present invention, the shape of the first protrusion 22 can be various, and the embodiment of the present invention does not limit the specific shape of the first protrusion 22. In the embodiment where there are multiple first protrusions 22 and they are spaced apart along the circumference of the nozzle body 21, the space between two adjacent first protrusions 22 can be used for the cleaning gas to pass through. In order to better guide the cleaning gas, in one embodiment, the first protrusion 22 can be a strip protrusion, the first protrusion 22 can be connected to the annular portion 23, and the two adjacent first protrusions 22 and the nozzle body 21 can form a guide groove 05 with openings at both ends, and the guide groove 05 can guide the passing cleaning gas. Since the first protrusion 22 is a strip structure, the guide groove 05 is also a long strip structure, so that the cleaning gas can be better guided. As described above, the annular portion 23 is used to guide the cleaning gas in the radial direction of the nozzle body 21 in a direction away from the nozzle body 21, so that the cleaning gas can be diffused as widely as possible. In this embodiment, the first protrusion 22 can be connected to the annular portion 23, so that one port of the guide groove 05 can be better connected with the guide surface of the annular portion 23, which is conducive to the cleaning gas discharged from the guide groove 05 to be continued to be guided by the annular portion 23 in a timely manner.

[0048] During the cleaning process, part of the cleaning gas entering the semiconductor process chamber from the annular air inlet channel 03 will be directed in the reverse direction by the reverse flow guide groove 04, and then flow toward the inner wall of the top cover of the semiconductor process chamber. Another part will enter the flow guide groove 05, and be guided by the reverse flow guide groove 04 to the annular portion 23, and continue to be guided by the annular portion 23, thereby achieving a wide range of diffusion. Since the cleaning process requires more cleaning gas, the width between the inner edge and the outer edge of the annular air inlet channel 03 is greater than the size of the reverse flow guide groove 04 in the same direction (which can be considered as the groove width of the reverse flow guide groove 04). In this case, part of the cleaning gas entering the process space of the semiconductor process chamber from the air inlet channel 03 will also flow directly to the annular portion 23, and flow directly to other areas under the guidance of the annular portion 23, such as Figure 6 shown.

[0049] In other embodiments, the surface of the first protrusion 22 facing away from the nozzle body 21 may be a guide surface 221, and the guide direction of the guide surface 221 may be consistent with the guide direction of the guide groove 05, so that the cleaning gas directly entering the guide surface 221 can be guided by the guide surface 221 to the annular portion 23.

[0050] In order to reduce the direct impact on the annular portion 23 in the through direction of the intake passage 03, the portion of the nozzle body 21 where the first protrusion 22 is provided may be a tapered section. The annular portion 23 is arranged around the first end of the tapered section, and the second end of the tapered section may be located at the first end 213. It should be noted that the first end of the tapered section is the large end of the tapered section, and the second end of the tapered section is the small end of the tapered section. In this case, a portion of the conical surface of the tapered section extends obliquely from the first end 213 or a position close to the first end 213 to the annular portion 23. This structure enables the guide of the guide groove 05 to have a certain inclination, thereby reducing the impact on the annular portion 23.

[0051] In the embodiment where the first protrusion 22 has the guide surface 221 mentioned above, the cleaning gas guided by the guide surface 221 can also flow into the annular portion 23 at an angle, which can also reduce the impact on the annular portion 23. In one embodiment, the guide surface 221 can form an angle β with the first direction, wherein the angle β can be greater than or equal to 10° and less than or equal to 80°. In other embodiments, the angle β formed by the guide surface 221 and the first direction can also be other angles, which are not limited by the embodiment of the present invention. It should be noted that the first direction ( Figure 4 The direction indicated by the arrow Y in the middle) and the air intake direction of the first end 213 ( Figure 4 The air inlet direction of the first end 213 is parallel to the central axis of the nozzle body 21, and the central axis of the nozzle body 21 is perpendicular to the radial direction of the nozzle body 21 mentioned above. The first direction extends along the radial direction of the annular portion 23 toward the center of the annular portion 23.

[0052] As described above, the second end 214 of the nozzle body 21 is provided with an air outlet. In one embodiment, the area of ​​the nozzle body 21 used to form the bottom wall of the guide groove 05 can be provided with a first air outlet 211. In other embodiments, the area of ​​the nozzle body 21 located on the side of the annular portion 23 facing the first end 213 is provided with a first air outlet 211. The first air outlet 211 can be located in the guide groove 05 or outside the guide groove 05, and the embodiment of the present invention is not limited thereto. During the coating process, the process gas can be ejected from the first air outlet 211, such as Figure 5 As shown. Of course, in the embodiment where the nozzle body 21 includes the tapered section mentioned above, the first gas outlet 211 can be opened on the tapered surface of the tapered section. In this case, the process gas ejected from the first gas outlet 211 will have a component moving toward the inner wall of the semiconductor process chamber top cover, making it easier to form a deposition layer on the inner wall of the semiconductor process chamber top cover, thereby protecting the corresponding inner wall. The deposition layer is first deposited on the inner wall, thereby protecting the inner wall. After the coating process is completed, the deposition layer is finally cleaned away by the cleaning gas.

[0053] In the embodiment of the present invention, the angle α between the surface 222 of the first protrusion 22 facing away from the annular portion 23 and the second direction may be greater than or equal to 0° and less than or equal to 80°. Figure 4 In this case, the surface 222 of the first protrusion 22 facing away from the annular portion 23 may be oriented relative to the inlet direction of the cleaning gas ( Figure 4 The second direction is inclined in the direction indicated by the arrow Z in the middle) and radially, so that the cleaning gas blocked by the reverse guide groove 04 is guided more to the inner wall of the top cover of the semiconductor process chamber. Of course, the angle α between the surface 222 of the first protrusion 22 facing away from the annular portion 23 and the second direction can also be other values, which is not limited by the embodiment of the present invention. The second direction is Figure 3 The second direction is indicated by the arrow X, and extends along the radial direction of the annular portion 23 away from the center of the annular portion 23 .

[0054] As described above, the annular portion 23 has a flow guiding function. Specifically, the radial direction of the annular portion 23 can be parallel to the horizontal direction. The annular portion 23 has a first annular surface 231, and the first annular surface 231 faces the inlet channel 03. The cleaning gas guided by the guide groove 05, the cleaning gas guided by the guide surface 221, or the cleaning gas directly sprayed onto the annular portion 23 can be guided along the radial direction of the annular portion 23 under the guidance of the first annular surface 231.

[0055] In a further embodiment, the annular portion 23 may have a second annular surface 232, and the second annular surface 232 is opposite to the first annular surface 231. The second end 214 of the nozzle body 21 may protrude from the second annular surface 232, and a second gas outlet 212 is provided at a portion where the inner edge of the nozzle body 21 and the second annular surface 232 are connected. There are multiple second gas outlets 212, and they may be distributed along the circumference of the nozzle body 21. The process gas entering the first end 213 can also be ejected from the second gas outlet 212, and thus further ejected into the process space 01 of the semiconductor process chamber on the side facing the second annular surface 232, thereby improving the distribution efficiency of the process gas in the process space 01 of the semiconductor process chamber, as shown in FIG. Figure 5 shown.

[0056] In other embodiments, the annular portion 23 may be provided with a through hole 233, and the through hole 233 may penetrate the annular portion 23 in the axial direction of the annular portion 23, so that the two orifices of the through hole 233 are respectively located on the first annular surface 231 and the second annular surface 232. This structure enables part of the cleaning gas ejected from the inlet channel 03 and guided by the annular portion 23 to flow to the first annular surface 231 through the through hole 233 and diffuse upward toward the second annular surface 232. This structure enables the cleaning gas ejected from the inlet channel 03 to diffuse not only in the radial direction of the first annular surface 231, but also in the axial direction of the annular portion 23 through the annular portion 23, thereby cleaning the electrostatic adsorption chuck (ESC) and surrounding components inside the chamber. These components are located in the center of the chamber, and are used to carry wafers, provide bias radio frequency, electrostatic adsorption voltage, and lift wafers during the deposition process.

[0057] The through hole 233 may be one or more, and the embodiment of the present invention does not limit the specific number of the through holes 233. In order to further facilitate the diffusion of the process gas, in one embodiment, there may be more than one through hole 233. The multiple through holes 233 may also be evenly distributed in the circumferential direction of the annular portion 23.

[0058] In the embodiment of the present invention, the first protrusion 22, the annular portion 23 and the nozzle body 21 may be connected by an assembly structure, or may be an integral structure manufactured by an integral manufacturing process. The embodiment of the present invention is not limited thereto.

[0059] Due to the presence of high-frequency radio frequency in the semiconductor process chamber, in order to avoid sparks in the process space 01 that may damage the process gas nozzle 20 and generate particles, each corner of the process gas nozzle 20 disclosed in the embodiment of the present invention adopts chamfering for smooth transition, and the chamfer radius can be between 0.1-5mm, or 0.1mm, or 5mm.

[0060] Based on the process gas nozzle 20 disclosed in the embodiment of the present invention, the embodiment of the present invention discloses a semiconductor process chamber. The disclosed semiconductor process chamber includes the process gas nozzle 20 disclosed in the above embodiment.

[0061] The semiconductor process chamber disclosed in the embodiment of the present invention may further include a chamber housing 10, which is provided with a process space 01 and a mounting hole 02 connected to the process space 01. The first end 213 of the nozzle body 21 is disposed in the mounting hole 02, and forms an annular air inlet channel 03 with the hole wall of the mounting hole 02.

[0062] Specifically, the chamber housing 10 may include a top cover 11 and a housing body 12, wherein the top cover 11 is mounted on the housing body 12 and forms a process space 01 with the housing body 12. The mounting hole 02 may be provided on the top cover 11, in which case the top cover inner wall 111 of the top cover 11 is the inner wall of the semiconductor process chamber where the air inlet channel 03 is provided.

[0063] The semiconductor process chamber disclosed in the embodiment of the present invention may further include a wafer support 06, which is disposed in the process space 01 and is opposite to the process gas nozzle 20 disposed on the top cover 11. In the embodiment of the present invention, the process gas nozzle 20 may serve as a top process gas nozzle disposed on the top cover 11 of the semiconductor process chamber.

[0064] Please refer to Figures 7 to 10 In a further embodiment, the semiconductor process chamber disclosed in the embodiment of the present invention may further include a plurality of guide plates 30, wherein the plurality of guide plates 30 may be arranged on the inner wall of the mounting hole 02 at intervals in the circumferential direction of the mounting hole 02, the first ends of the plurality of guide plates 30 may be rotatably arranged in the mounting hole 02, and the second ends of the guide plates 30 may be rotatable relative to the first ends of the guide plates 30, thereby changing the guiding direction of the cleaning gas by the guide plates 30, such as Fig. 9 and Fig.10 As shown, a plurality of guide plates 30 may be opposite to the reverse guide groove 04 .

[0065] In the specific working process, the guiding direction of the guide plate 30 can be adjusted by rotation to change the angle of the cleaning gas entering the reverse guide groove 04, so that the reverse flow angle of the cleaning gas after the reverse guide groove 04 reversely guides the cleaning gas can be adjusted, and finally the specific position of the cleaning gas projected onto the inner wall 111 of the top cover of the chamber shell 10 can be adjusted, so as to perform targeted cleaning, which is more conducive to improving the cleaning efficiency.

[0066] The first end of the guide plate 30 can be rotatably connected to the mounting hole 02 in a variety of ways. For example, the first end of the guide plate 30 can be rotatably connected to the mounting hole 02 through a deformable member. For another example, the first end of the guide plate 30 can be rotatably connected to the mounting hole 02 in a hinged manner. The embodiment of the present invention does not limit the specific rotation connection structure of the first end of the guide plate 30. It should be noted that, in this article, the first end of the guide plate 30 is an end of the guide plate 30 away from the process space 01 of the chamber shell 10 and close to the inlet of the air inlet channel 03. The second end of the guide plate 30 is an end of the guide plate 30 close to the process space 01 of the chamber shell 10 and close to the outlet of the air inlet channel 03. The outlet of the air inlet channel 03 is connected to the process space 01 of the chamber shell 10.

[0067] In order to facilitate the rotational connection of the guide plate 30, in one embodiment, the inner wall of the mounting hole 02 may be provided with a plurality of second protrusions 021, and a receiving groove 022 may be formed between two adjacent second protrusions 021. The first end of the guide plate 30 may be located in the receiving groove 022, and is rotationally connected to the two adjacent second protrusions 021 via a hinge shaft. Since the guide plate 30 is rotatable, when the guide plate 30 is not required to be tilted relative to the axial direction of the air inlet channel 03, the guide plate 30 may be accommodated in the receiving groove 022, and the guide direction of the guide plate 30 may be parallel to the axial direction of the air inlet channel 03. At this time, the guide plate 30 does not change the direction of the cleaning gas passing through the air inlet channel 03, such as Figure 7 and Figure 8 shown.

[0068] In a further embodiment, Fig.11 As shown, the second protrusion 021 can be a strip-shaped protrusion. When the guide direction of the guide plate 30 is parallel to the axial direction of the air inlet channel 03, the guide plate 30 can be completely accommodated in the accommodating groove 022, and the surface of the guide plate 30 facing the central axis of the mounting hole 02 (i.e., the guide surface of the guide plate 30) can be spliced ​​with the surface of the second protrusion 021 facing the central axis of the mounting hole 02 to form a cylindrical surface, as shown in FIG. Figure 7 As shown, the plurality of second protrusions 021 can be gathered more regularly.

[0069] Please refer to Figures 12 to 15 The semi-conductive process chamber disclosed in the embodiment of the present invention may further include a driving mechanism 40 , which is connected to the guide plate 30 , and is used to drive the guide plate 30 to rotate, thereby changing the rotation angle of the guide plate 30 .

[0070] There may be many types of the driving mechanism 40, and the embodiment of the present invention does not limit the specific type of the driving mechanism 40. For example, the driving mechanism 40 may include a driving motor, and the driving motor is connected to the guide plate 30, so as to drive the guide plate 30 to rotate. Specifically, the power output shaft of the driving motor rotates with the guide plate 30, and the rotation of the power output shaft of the driving motor drives the guide plate 30 to rotate.

[0071] In other embodiments, the driving mechanism 40 may include a driving member 41, a rack 42 and a gear 43. The guide plate 30 may be rotatably connected to the chamber housing 10 through the hinge shaft 31. The gear 43 is disposed on the hinge shaft 31. The rack 42 is meshed with the gear 43. The driving member 41 is connected to the rack 42 and drives the rack 42 to move. The movement of the rack 42 drives the gear 43 to rotate. The rotation of the gear 43 eventually drives the corresponding guide plate 30 to rotate through the hinge shaft 31. Specifically, a corresponding driving mechanism 40 may be configured for each guide plate 30. In this embodiment, the gear 43 and the hinge shaft 31 may be gear shafts of an integral structure, or may be split structures and connected by assembly. The driving member 41 may be a linear motor, a hydraulic telescopic member, a pneumatic telescopic member, etc. The embodiment of the present invention does not limit the specific type of the driving member 41.

[0072] The semiconductor process chamber disclosed in the embodiment of the present invention may further include a controller, which is connected to at least the driving mechanism 40 mentioned above, and is used to control the driving mechanism 40 to drive the guide plate 30 to tilt relative to the through direction of the inlet channel 03 when the cleaning gas is introduced into the inlet channel 03, so as to adjust the flow direction of the cleaning gas, such as Fig. 9 and Fig.10 shown.

[0073] In a further embodiment, the controller is also used to control the semiconductor process chamber to heat (for example, to bake), and to control the driving mechanism 40 to change the inclination angle of the guide plate 30 for multiple times to perform a cleaning process. It should be noted that there are multiple control strategies for the controller. For example, the controller can change the inclination angle of the guide plate 30 multiple times, so that the direction of the cleaning gas entering the reverse guide groove 04 is different, that is, the incident direction of the cleaning gas is different. Then, under the reverse flow guiding effect of the reverse guide groove 04, the inclination angle of the cleaning gas flowing out of the reverse guide groove 04 is also different, so that it can radiate to different areas of the inner wall of the chamber shell 10, so that different areas of the inner wall of the chamber shell 10 where the air inlet channel 03 is opened can be cleaned, which is more conducive to implementing more comprehensive cleaning and achieving the purpose of improving the cleaning effect.

[0074] The embodiment of the present invention does not limit the control strategy of the controller. In one embodiment, the controller disclosed in the embodiment of the present invention is configured as follows:

[0075] Step 1, controlling the semiconductor process chamber to perform a baking process;

[0076] Step 2: Control the driving mechanism 40 to drive the guide plate 30 to switch to an angle, and control the air inlet channel 03 to introduce cleaning gas into the process space 01 until the first stage of cleaning operation is completed.

[0077] Step 3: After completing the first stage cleaning operation, control the semiconductor process chamber to perform the baking process again.

[0078] Step 4: Control the driving mechanism 40 to drive the guide plate 30 to switch to another angle, and control the air inlet channel 03 to introduce cleaning gas into the process space 01 until the second stage cleaning operation is completed.

[0079] The above embodiments of the present invention focus on the differences between the various embodiments. As long as the different optimization features of the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

[0080] The embodiments of the present invention are described above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned specific implementation modes, which are merely illustrative rather than restrictive. Under the guidance of the present invention, ordinary technicians in this field can also make many forms without departing from the scope of protection of the present invention and the claims, all of which are within the protection of the present invention.

Claims

1. A process gas nozzle, characterized in that: The nozzle body (21) comprises a nozzle main body (21), a first protrusion (22) and an annular portion (23), wherein the nozzle main body (21) has a first end (213) and a second end (214), the annular portion (23) is arranged around the second end (214), the first protrusion (22) is arranged on the nozzle main body (21) and is located on the side of the annular portion (23) facing the first end (213), the surface (222) of the first protrusion (22) facing away from the annular portion (23) forms a reverse flow guide groove (04) with the nozzle main body (21), and the reverse flow guide groove (04) is used for reverse flow guidance of the cleaning gas, and the second end (214) is provided with an air outlet.

2. The process gas nozzle according to claim 1, characterized in that There are a plurality of first protrusions (22), which are arranged on the nozzle body (21) at intervals along the circumference of the nozzle body (21); or, the first protrusion (22) is an annular protrusion, which is arranged on the nozzle body (21) along the circumference of the nozzle body (21).

3. The process gas nozzle according to claim 2, characterized in that The first protrusion (22) is a strip-shaped protrusion, the first protrusion (22) is connected to the annular portion (23), and two adjacent first protrusions (22) and the nozzle body (21) form a guide groove (05) with openings at both ends.

4. The process gas nozzle according to claim 3, characterized in that The surface of the first protrusion (22) facing away from the nozzle body (21) is a flow guide surface (221), and the flow guide direction of the flow guide surface (221) is consistent with the flow guide direction of the flow guide groove (05).

5. The process gas nozzle according to claim 4, characterized in that An included angle β between the guide surface (221) and a first direction is greater than or equal to 10° and less than or equal to 80°, and the first direction extends along the radial direction of the annular portion (23) toward the center of the annular portion (23).

6. The process gas nozzle according to claim 3, characterized in that The nozzle body (21) is provided with a first air outlet (211) in an area of ​​the bottom wall of the guide groove (05), and the first air outlet (211) is located at one end of the guide groove (05) facing the annular portion (23).

7. The process gas nozzle according to claim 2, characterized in that A plurality of the first protrusions (22) are evenly distributed in the circumferential direction of the nozzle body (21), and each of the first protrusions (22) has an equal width along the circumferential direction.

8. The process gas nozzle according to claim 1, characterized in that An angle α between a surface (222) of the first protrusion (22) facing away from the annular portion (23) and a second direction is greater than or equal to 0° and less than or equal to 80°, and the second direction extends along the radial direction of the annular portion (23) away from the center of the annular portion (23).

9. The process gas nozzle according to any one of claims 1 to 8, characterized in that The process gas nozzle is an integral structure.

10. A semiconductor process chamber, characterized in that: It comprises a chamber shell (10) and a process gas nozzle (20) according to any one of claims 1 to 9, wherein the chamber shell (10) is provided with a process space (01) and a mounting hole (02) connected to the process space (01), and the first end (213) of the nozzle body (21) is arranged in the mounting hole (02) and forms an annular air inlet channel (03) with the hole wall of the mounting hole (02).

11. The semiconductor process chamber according to claim 10, characterized in that: The semiconductor process chamber further comprises a plurality of guide plates (30), wherein the plurality of guide plates (30) are arranged on the hole wall of the mounting hole (02) at intervals in the circumferential direction of the mounting hole (02), the first ends of the plurality of guide plates (30) are rotatably arranged in the mounting hole (02), and the second ends of the guide plates (30) are rotatable relative to the first ends of the guide plates (30).

12. The semiconductor process chamber according to claim 11, characterized in that: The inner wall of the mounting hole (02) is provided with a plurality of second protrusions (021), and a receiving groove (022) is formed between two adjacent second protrusions (021). The first end of the second protrusion (021) is located in the receiving groove (022) and is rotatably connected to at least one of the two adjacent second protrusions (021).

13. The semiconductor process chamber according to claim 12, wherein: The second protrusion (021) is a strip-shaped protrusion. When the guide direction of the guide plate (30) is parallel to the axial direction of the air intake channel (03), the guide plate (30) is accommodated in the accommodating groove (022), and the surface of the guide plate (30) facing the central axis of the mounting hole (02) and the surface of the second protrusion (021) facing the central axis of the mounting hole (02) are spliced ​​into a cylindrical surface.

14. The semiconductor process chamber according to claim 11, wherein: The semiconductor process chamber also includes a driving mechanism (40), the driving mechanism (40) includes a driving member (41), a rack (42) and a gear (43), the guide plate (30) is rotatably connected to the chamber housing (10) via a hinge shaft (31), the gear (43) is connected to the hinge shaft (31), the rack (42) is meshed with the gear (43), the driving member (41) is connected to the rack (42), and is used to move the rack (42).

15. The semiconductor process chamber according to claim 14, wherein: The semiconductor process chamber further comprises a controller, the controller being connected to the driving mechanism (40), and the controller being used to control the driving mechanism (40) to drive the guide plate (30) to rotate so as to be inclined relative to the through direction of the air inlet channel (03).

16. The semiconductor process chamber according to claim 15, characterized in that: The controller is also used to control the heating of the semiconductor process chamber, and to control the driving mechanism (40) multiple times to change the inclination angle of the guide plate (30) to perform a cleaning process.

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